Seite 149 nach 198

Name: SQJ422EP-T1_BE3
Brand: Vishay Siliconix
SKU: 12852071-3
Price: 18.62 EUR
Availability: InStock

Wählen Sie Seite: [ << Vorherige Seite ] 1 19 38 57 76 95 114 133 144 145 146 147 148 149 150 151 152 153 154 171 190 198 [ Nächste Seite >> ]

Foto

Bezeichnung

Hersteller

Beschreibung

Verfügbarkeit

Privatkunde

SQJ422EP-T1_BE3

Vishay Siliconix

Description: MOSFET N-CH 40V 75A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 8873 Stücke:

Lieferzeit 10-14 Tag (e)

7+	3.17 EUR
10+	2.58 EUR
100+	2.01 EUR
500+	1.7 EUR
1000+	1.39 EUR

Mindestbestellmenge: 7 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIZ254DT-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active

auf Bestellung 4146 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.52 EUR
10+	2.23 EUR
100+	1.49 EUR
500+	1.18 EUR
1000+	1.08 EUR

Mindestbestellmenge: 6 Stücke

Im Einkaufswagen Stück im Wert von UAH

DG418LEDY-GE3

Vishay Siliconix

Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

DG418LEDY-T1-GE3

Vishay Siliconix

Description: IC ANALOG SWITCH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SQJA42EP-T1_GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 20A PPAK SO-8

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJA42EP-T1_GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 20A PPAK SO-8

auf Bestellung 2747 Stücke:

Lieferzeit 10-14 Tag (e)

Im Einkaufswagen Stück im Wert von UAH

IRFR214PBF-BE3

Vishay Siliconix

Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SQJ411EP-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ411EP-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V

auf Bestellung 1780 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.67 EUR
10+	2.33 EUR
50+	1.76 EUR
100+	1.57 EUR
500+	1.24 EUR

Mindestbestellmenge: 6 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI7110DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 13.5A PPAK1212-8

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI7110DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 13.5A PPAK1212-8

auf Bestellung 1850 Stücke:

Lieferzeit 10-14 Tag (e)

5+	4.46 EUR
10+	4.01 EUR
100+	3.22 EUR
500+	2.65 EUR
1000+	2.19 EUR

Mindestbestellmenge: 5 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ142EP-T1_GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 167A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 191W (Tc)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	0.87 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ142EP-T1_GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 167A PPAK SO-8
Power Dissipation (Max): 191W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA

auf Bestellung 4200 Stücke:

Lieferzeit 10-14 Tag (e)

10+	2.09 EUR
13+	1.71 EUR
100+	1.33 EUR
500+	1.13 EUR
1000+	0.92 EUR

Mindestbestellmenge: 10 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ500AEP-T1_BE3

Vishay Siliconix

Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ500AEP-T1_BE3

Vishay Siliconix

Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIDR104AEP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	2.48 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR104AEP-T1-RE3

Vishay Siliconix

auf Bestellung 8003 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.28 EUR
10+	4.8 EUR
100+	3.37 EUR
500+	3.03 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR220DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 87.7A/100A PPAK
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	2.05 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR220EP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR220EP-T1-RE3

Vishay Siliconix

auf Bestellung 5898 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.83 EUR
10+	5.16 EUR
100+	3.64 EUR
500+	3.33 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR402EP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	1.83 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR402EP-T1-RE3

Vishay Siliconix

auf Bestellung 5897 Stücke:

Lieferzeit 10-14 Tag (e)

4+	5.84 EUR
10+	3.81 EUR
100+	2.64 EUR
500+	2.25 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR608EP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	2.2 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR608EP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V

auf Bestellung 5990 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.08 EUR
10+	4.63 EUR
100+	3.24 EUR
500+	2.64 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR626LDP-T1-RE3

Vishay Siliconix

Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V

auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	3.32 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR626LEP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	3.07 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR626LEP-T1-RE3

Vishay Siliconix

Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V

auf Bestellung 4168 Stücke:

Lieferzeit 10-14 Tag (e)

3+	9.09 EUR
10+	6.03 EUR
100+	4.28 EUR
500+	3.75 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR680ADP-T1-RE3

Vishay Siliconix

Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SISH892BDN-T1-GE3

Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	0.69 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SISH892BDN-T1-GE3

Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V

auf Bestellung 5790 Stücke:

Lieferzeit 10-14 Tag (e)

8+	2.68 EUR
13+	1.69 EUR
50+	1.25 EUR
100+	1.12 EUR
500+	0.87 EUR

Mindestbestellmenge: 8 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR140DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 79A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR140DP-T1-GE3

Vishay Siliconix

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 69.9A/100A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 69.9A/100A PPAK
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA

auf Bestellung 2490 Stücke:

Lieferzeit 10-14 Tag (e)

4+	5.81 EUR
10+	3.77 EUR
100+	2.62 EUR
500+	2.23 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-RE3

Vishay Siliconix

Description: MOSFET N-CH 30V 69.9A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-RE3

Vishay Siliconix

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIDR610DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 6000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR610DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SQW44N65EF-GE3

Vishay Siliconix

Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 335 Stücke:

Lieferzeit 10-14 Tag (e)

2+	17.06 EUR
10+	11.65 EUR
50+	9.34 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_GE3

Vishay Siliconix

Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

Produkt ist nicht verfügbar

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_GE3

Vishay Siliconix

Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

auf Bestellung 710 Stücke:

Lieferzeit 10-14 Tag (e)

7+	3.19 EUR
10+	2.86 EUR
100+	2.23 EUR
500+	1.84 EUR

Mindestbestellmenge: 7 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_BE3

Vishay Siliconix

Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	1.45 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_BE3

Vishay Siliconix

Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

auf Bestellung 2608 Stücke:

Lieferzeit 10-14 Tag (e)

7+	3.19 EUR
10+	2.86 EUR
100+	2.23 EUR
500+	1.84 EUR
1000+	1.45 EUR

Mindestbestellmenge: 7 Stücke

Im Einkaufswagen Stück im Wert von UAH

SUM120N04-1M7L-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11685 pF @ 20 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIHP052N60EF-GE3

Vishay Siliconix

Description: MOSFET EF SERIES TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V

auf Bestellung 796 Stücke:

Lieferzeit 10-14 Tag (e)

2+	14.3 EUR
10+	9.7 EUR
50+	7.71 EUR
100+	7.08 EUR
500+	5.96 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI1427EDH-T1-BE3

Vishay Siliconix

Description: MOSFET P-CH 20V 2A/2A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI1427EDH-T1-BE3

Vishay Siliconix

Description: MOSFET P-CH 20V 2A/2A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V

auf Bestellung 2769 Stücke:

Lieferzeit 10-14 Tag (e)

20+	1.09 EUR
31+	0.68 EUR
100+	0.43 EUR
500+	0.32 EUR
1000+	0.29 EUR

Mindestbestellmenge: 20 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIC453ED-T1-GE3

Vishay Siliconix

Description: IC REG BCK ADJ POWERPAK MLP34-57
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	4.97 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIC450ED-T1-GE3

Vishay Siliconix

Description: IC REG BCK ADJ POWERPAK MLP34-57
Part Status: Active
Voltage - Output (Min/Fixed): 0.3V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP34-57
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 40A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerWFQFN
Packaging: Tape & Reel (TR)

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	6.99 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIC450ED-T1-GE3

Vishay Siliconix

auf Bestellung 6502 Stücke:

Lieferzeit 10-14 Tag (e)

2+	12.34 EUR
10+	9.5 EUR
25+	8.78 EUR
100+	8 EUR
250+	7.74 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

DG9431EDV-T1-GE3

Vishay Siliconix

Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	1.82 EUR
6000+	1.78 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

DG9431EDV-T1-GE3

Vishay Siliconix

Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 7804 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.61 EUR
10+	2.65 EUR
25+	2.42 EUR
100+	2.15 EUR
250+	2.03 EUR
500+	1.95 EUR

Mindestbestellmenge: 6 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_GE3

Vishay Siliconix

Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	0.73 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_GE3

Vishay Siliconix

Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC

auf Bestellung 8608 Stücke:

Lieferzeit 10-14 Tag (e)

9+	2.4 EUR
13+	1.62 EUR
100+	1.13 EUR
500+	0.9 EUR
1000+	0.83 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_BE3

Vishay Siliconix

Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	0.76 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_BE3

Vishay Siliconix

Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5079 Stücke:

Lieferzeit 10-14 Tag (e)

9+	2.4 EUR
13+	1.62 EUR
100+	1.13 EUR
500+	0.9 EUR
1000+	0.83 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJQ906E-T1_GE3

Vishay Siliconix

Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

Produkt ist nicht verfügbar

Mindestbestellmenge: 2000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJQ906E-T1_GE3

Vishay Siliconix

Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 1093 Stücke:

Lieferzeit 10-14 Tag (e)

4+	6.24 EUR
10+	4.06 EUR
100+	2.83 EUR
500+	2.44 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4005EY-T1_GE3

Vishay Siliconix

Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	0.76 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4005EY-T1_GE3

Vishay Siliconix

Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101

auf Bestellung 5392 Stücke:

Lieferzeit 10-14 Tag (e)

9+	2.34 EUR
14+	1.57 EUR
100+	1.19 EUR
500+	0.93 EUR
1000+	0.82 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ422EP-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 8873 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.17 EUR
10+	2.58 EUR
100+	2.01 EUR
500+	1.7 EUR
1000+	1.39 EUR

Mindestbestellmenge: 7 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIZ254DT-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 70V 11.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Part Status: Active

auf Bestellung 4146 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.52 EUR
10+	2.23 EUR
100+	1.49 EUR
500+	1.18 EUR
1000+	1.08 EUR

Mindestbestellmenge: 6 Stücke

Im Einkaufswagen Stück im Wert von UAH

DG418LEDY-GE3

Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

DG418LEDY-T1-GE3

Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SQJA42EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJA42EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8

auf Bestellung 2747 Stücke:

Lieferzeit 10-14 Tag (e)

Im Einkaufswagen Stück im Wert von UAH

IRFR214PBF-BE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SQJ411EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ411EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V

auf Bestellung 1780 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.67 EUR
10+	2.33 EUR
50+	1.76 EUR
100+	1.57 EUR
500+	1.24 EUR

Mindestbestellmenge: 6 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI7110DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI7110DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8

auf Bestellung 1850 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
5+	4.46 EUR
10+	4.01 EUR
100+	3.22 EUR
500+	2.65 EUR
1000+	2.19 EUR

Mindestbestellmenge: 5 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ142EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 191W (Tc)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.87 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ142EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Power Dissipation (Max): 191W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA

auf Bestellung 4200 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
10+	2.09 EUR
13+	1.71 EUR
100+	1.33 EUR
500+	1.13 EUR
1000+	0.92 EUR

Mindestbestellmenge: 10 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ500AEP-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJ500AEP-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIDR104AEP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	2.48 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR104AEP-T1-RE3

auf Bestellung 8003 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3+	7.28 EUR
10+	4.8 EUR
100+	3.37 EUR
500+	3.03 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR220DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 87.7A/100A PPAK
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	2.05 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR220EP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR220EP-T1-RE3

auf Bestellung 5898 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3+	7.83 EUR
10+	5.16 EUR
100+	3.64 EUR
500+	3.33 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR402EP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	1.83 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR402EP-T1-RE3

auf Bestellung 5897 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
4+	5.84 EUR
10+	3.81 EUR
100+	2.64 EUR
500+	2.25 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR608EP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	2.2 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR608EP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V

auf Bestellung 5990 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3+	7.08 EUR
10+	4.63 EUR
100+	3.24 EUR
500+	2.64 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR626LDP-T1-RE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V

auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	3.32 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR626LEP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	3.07 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR626LEP-T1-RE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V

auf Bestellung 4168 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3+	9.09 EUR
10+	6.03 EUR
100+	4.28 EUR
500+	3.75 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR680ADP-T1-RE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SISH892BDN-T1-GE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.69 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SISH892BDN-T1-GE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V

auf Bestellung 5790 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
8+	2.68 EUR
13+	1.69 EUR
50+	1.25 EUR
100+	1.12 EUR
500+	0.87 EUR

Mindestbestellmenge: 8 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR140DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 79A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR140DP-T1-GE3

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA

auf Bestellung 2490 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
4+	5.81 EUR
10+	3.77 EUR
100+	2.62 EUR
500+	2.23 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-RE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR390DP-T1-RE3

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIDR610DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 6000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIDR610DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SQW44N65EF-GE3

Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 335 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2+	17.06 EUR
10+	11.65 EUR
50+	9.34 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

Produkt ist nicht verfügbar

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

auf Bestellung 710 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.19 EUR
10+	2.86 EUR
100+	2.23 EUR
500+	1.84 EUR

Mindestbestellmenge: 7 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2500+	1.45 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4282EY-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC

auf Bestellung 2608 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
7+	3.19 EUR
10+	2.86 EUR
100+	2.23 EUR
500+	1.84 EUR
1000+	1.45 EUR

Mindestbestellmenge: 7 Stücke

Im Einkaufswagen Stück im Wert von UAH

SUM120N04-1M7L-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11685 pF @ 20 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

SIHP052N60EF-GE3

Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V

auf Bestellung 796 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2+	14.3 EUR
10+	9.7 EUR
50+	7.71 EUR
100+	7.08 EUR
500+	5.96 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI1427EDH-T1-BE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A/2A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SI1427EDH-T1-BE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A/2A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V

auf Bestellung 2769 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
20+	1.09 EUR
31+	0.68 EUR
100+	0.43 EUR
500+	0.32 EUR
1000+	0.29 EUR

Mindestbestellmenge: 20 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIC453ED-T1-GE3

Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP34-57
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	4.97 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIC450ED-T1-GE3

Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP34-57
Part Status: Active
Voltage - Output (Min/Fixed): 0.3V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP34-57
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 40A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerWFQFN
Packaging: Tape & Reel (TR)

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	6.99 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SIC450ED-T1-GE3

auf Bestellung 6502 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2+	12.34 EUR
10+	9.5 EUR
25+	8.78 EUR
100+	8 EUR
250+	7.74 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

DG9431EDV-T1-GE3

Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	1.82 EUR
6000+	1.78 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

DG9431EDV-T1-GE3

Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 7804 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.61 EUR
10+	2.65 EUR
25+	2.42 EUR
100+	2.15 EUR
250+	2.03 EUR
500+	1.95 EUR

Mindestbestellmenge: 6 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2500+	0.73 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC

auf Bestellung 8608 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
9+	2.4 EUR
13+	1.62 EUR
100+	1.13 EUR
500+	0.9 EUR
1000+	0.83 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2500+	0.76 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4064EY-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101

auf Bestellung 5079 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
9+	2.4 EUR
13+	1.62 EUR
100+	1.13 EUR
500+	0.9 EUR
1000+	0.83 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJQ906E-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

Produkt ist nicht verfügbar

Mindestbestellmenge: 2000 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQJQ906E-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101

auf Bestellung 1093 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
4+	6.24 EUR
10+	4.06 EUR
100+	2.83 EUR
500+	2.44 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4005EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
2500+	0.76 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

SQ4005EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101

auf Bestellung 5392 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
9+	2.34 EUR
14+	1.57 EUR
100+	1.19 EUR
500+	0.93 EUR
1000+	0.82 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

Wählen Sie Seite: [ << Vorherige Seite ] 1 19 38 57 76 95 114 133 144 145 146 147 148 149 150 151 152 153 154 171 190 198 [ Nächste Seite >> ]