Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11848) > Seite 56 nach 198

Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 51 52 53 54 55 56 57 58 59 60 61 76 95 114 133 152 171 190 198  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SI6924AEDQ-T1-GE3 SI6924AEDQ-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3 Vishay Siliconix si6968be.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 19691 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.14 EUR
13+1.73 EUR
100+1.05 EUR
500+0.8 EUR
1000+0.75 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6981DQ-T1-GE3 SI6981DQ-T1-GE3 Vishay Siliconix si6981dq.pdf Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6993DQ-T1-GE3 SI6993DQ-T1-GE3 Vishay Siliconix 72369.pdf Description: MOSFET 2P-CH 30V 3.6A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7119DN-T1-GE3 SI7119DN-T1-GE3 Vishay Siliconix si7119dn.pdf Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V
auf Bestellung 8520 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
12+1.89 EUR
50+1.42 EUR
100+1.26 EUR
500+0.99 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Si7120ADN-T1-GE3 Si7120ADN-T1-GE3 Vishay Siliconix Si7120ADN.PDF Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
auf Bestellung 5981 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.06 EUR
10+2.65 EUR
100+1.92 EUR
500+1.54 EUR
1000+1.4 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7139DP-T1-GE3 SI7139DP-T1-GE3 Vishay Siliconix si7139dp.pdf Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.11 EUR
10+2.62 EUR
50+1.98 EUR
100+1.77 EUR
500+1.4 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7141DP-T1-GE3 SI7141DP-T1-GE3 Vishay Siliconix si7141dp.pdf Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 10 V
auf Bestellung 28153 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.99 EUR
10+3.88 EUR
50+2.98 EUR
100+2.69 EUR
500+2.18 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7143DP-T1-GE3 SI7143DP-T1-GE3 Vishay Siliconix si7143dp.pdf Description: MOSFET P-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16.1A, 10V
Power Dissipation (Max): 4.2W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 6942 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.8 EUR
10+2.42 EUR
100+1.63 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7190DP-T1-GE3 SI7190DP-T1-GE3 Vishay Siliconix si7190dp.pdf Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V
auf Bestellung 6123 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.8 EUR
10+3.14 EUR
100+2.5 EUR
500+2.12 EUR
1000+1.8 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7212DN-T1-GE3 SI7212DN-T1-GE3 Vishay Siliconix si7212dn.pdf Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 16004 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.69 EUR
10+3.02 EUR
50+2.3 EUR
100+2.07 EUR
500+1.65 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7222DN-T1-GE3 SI7222DN-T1-GE3 Vishay Siliconix 73439.pdf Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7232DN-T1-GE3 SI7232DN-T1-GE3 Vishay Siliconix si7232dn.pdf Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7236DP-T1-GE3 SI7236DP-T1-GE3 Vishay Siliconix si7236dp.pdf Description: MOSFET 2N-CH 20V 60A PPAK SO-8
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7272DP-T1-GE3 SI7272DP-T1-GE3 Vishay Siliconix si7272dp.pdf Description: MOSFET 2N-CH 30V 25A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 7307 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.67 EUR
10+2.34 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7288DP-T1-GE3 SI7288DP-T1-GE3 Vishay Siliconix si7288dp.pdf Description: MOSFET 2N-CH 40V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 43023 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.05 EUR
10+2.59 EUR
50+1.95 EUR
100+1.75 EUR
500+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7309DN-T1-GE3 SI7309DN-T1-GE3 Vishay Siliconix si7309dn.pdf Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 12529 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7403BDN-T1-GE3 SI7403BDN-T1-GE3 Vishay Siliconix 73333.pdf Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix si7431dp.pdf Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.06 EUR
10+6.68 EUR
100+4.76 EUR
500+3.94 EUR
1000+3.69 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7439DP-T1-GE3 SI7439DP-T1-GE3 Vishay Siliconix si7439dp.pdf Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 6335 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.87 EUR
10+6.54 EUR
100+4.66 EUR
500+3.86 EUR
1000+3.59 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 Vishay Siliconix si7456cd.pdf Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V
auf Bestellung 2580 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+3.02 EUR
50+2.3 EUR
100+2.06 EUR
500+1.65 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7462DP-T1-GE3 SI7462DP-T1-GE3 Vishay Siliconix si7462dp.pdf Description: MOSFET N-CH 200V 2.6A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7464DP-T1-GE3 SI7464DP-T1-GE3 Vishay Siliconix si7464dp.pdf Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.52 EUR
10+2.92 EUR
100+2.32 EUR
500+1.96 EUR
1000+1.67 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7469DP-T1-GE3 SI7469DP-T1-GE3 Vishay Siliconix si7469dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 48403 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.62 EUR
10+4.31 EUR
50+3.32 EUR
100+3 EUR
500+2.44 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7613DN-T1-GE3 SI7613DN-T1-GE3 Vishay Siliconix si7613dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
auf Bestellung 25857 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.17 EUR
11+2 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.95 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7617DN-T1-GE3 SI7617DN-T1-GE3 Vishay Siliconix si7617dn.pdf Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 63448 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.73 EUR
13+1.73 EUR
50+1.29 EUR
100+1.14 EUR
500+0.89 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7619DN-T1-GE3 SI7619DN-T1-GE3 Vishay Siliconix si7619dn.pdf Description: MOSFET P-CH 30V 24A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 91591 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.34 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7621DN-T1-GE3 SI7621DN-T1-GE3 Vishay Siliconix si7621dn.pdf Description: MOSFET P-CH 20V 4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7625DN-T1-GE3 SI7625DN-T1-GE3 Vishay Siliconix si7625dn.pdf Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4427 pF @ 15 V
auf Bestellung 1671 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.25 EUR
11+2.06 EUR
100+1.38 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7629DN-T1-GE3 SI7629DN-T1-GE3 Vishay Siliconix si7629dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V
auf Bestellung 24057 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.07 EUR
13+1.69 EUR
100+1.31 EUR
500+1.11 EUR
1000+0.9 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7635DP-T1-GE3 SI7635DP-T1-GE3 Vishay Siliconix si7635dp.pdf Description: MOSFET P-CH 20V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 26A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7703EDN-T1-GE3 SI7703EDN-T1-GE3 Vishay Siliconix si7703edn.pdf Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7772DP-T1-GE3 SI7772DP-T1-GE3 Vishay Siliconix si7772dp.pdf Description: MOSFET N-CH 30V 35.6A PPAK SO-8
auf Bestellung 2261 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7774DP-T1-GE3 SI7774DP-T1-GE3 Vishay Siliconix si7774dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
auf Bestellung 4517 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7810DN-T1-GE3 SI7810DN-T1-GE3 Vishay Siliconix 70689.pdf Description: MOSFET N-CH 100V 3.4A PPAK1212-8
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7812DN-T1-GE3 SI7812DN-T1-GE3 Vishay Siliconix si7812dn.pdf Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 45900 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.4 EUR
10+3.49 EUR
50+2.67 EUR
100+2.4 EUR
500+1.94 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 Vishay Siliconix si7858bd.pdf Description: MOSFET N-CH 12V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
auf Bestellung 15798 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.58 EUR
10+2.93 EUR
50+2.23 EUR
100+1.99 EUR
500+1.58 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7872DP-T1-GE3 SI7872DP-T1-GE3 Vishay Siliconix si7872dp.pdf Description: MOSFET 2N-CH 30V 6.4A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7911DN-T1-GE3 SI7911DN-T1-GE3 Vishay Siliconix 72340.pdf Description: MOSFET 2P-CH 20V 4.2A 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7923DN-T1-GE3 SI7923DN-T1-GE3 Vishay Siliconix 72622.pdf Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 34266 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
10+2.5 EUR
100+1.99 EUR
500+1.69 EUR
1000+1.43 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7938DP-T1-GE3 SI7938DP-T1-GE3 Vishay Siliconix si7938dp.pdf Description: MOSFET 2N-CH 40V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 38747 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+2.8 EUR
50+2.12 EUR
100+1.9 EUR
500+1.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix 72282.pdf Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Siliconix 73130.pdf Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
auf Bestellung 16869 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7956DP-T1-GE3 SI7956DP-T1-GE3 Vishay Siliconix 72960.pdf Description: MOSFET 2N-CH 150V 2.6A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.89 EUR
10+5.19 EUR
100+3.71 EUR
500+3.06 EUR
1000+2.84 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7997DP-T1-GE3 SI7997DP-T1-GE3 Vishay Siliconix si7997dp.pdf Description: MOSFET 2P-CH 30V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 5113 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.89 EUR
10+4.5 EUR
50+3.46 EUR
100+3.14 EUR
500+2.56 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI8445DB-T2-E1 SI8445DB-T2-E1 Vishay Siliconix si8445db.pdf Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si8447DB-T2-E1 Si8447DB-T2-E1 Vishay Siliconix si8447db.pdf Description: MOSFET P-CH 20V 11A 6MICRO FOOT
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Si8451DB-T2-E1 Vishay Siliconix SI8451DB.pdf Description: MOSFET P-CH 20V 10.8A MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8461DB-T2-E1 SI8461DB-T2-E1 Vishay Siliconix si8461db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8465DB-T2-E1 SI8465DB-T2-E1 Vishay Siliconix si8465db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix si8467db.pdf Description: MOSFET P-CH 20V MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8473EDB-T1-E1 SI8473EDB-T1-E1 Vishay Siliconix si8473edb.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8475EDB-T1-E1 SI8475EDB-T1-E1 Vishay Siliconix si8475edb.pdf Description: MOSFET P-CH 20V MICROFOOT
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI8499DB-T2-E1 SI8499DB-T2-E1 Vishay Siliconix si8499db.pdf Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI8800EDB-T2-E1 SI8800EDB-T2-E1 Vishay Siliconix si8800edb.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
auf Bestellung 43887 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.4 EUR
24+0.87 EUR
50+0.64 EUR
100+0.56 EUR
500+0.43 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI9433BDY-T1-GE3 SI9433BDY-T1-GE3 Vishay Siliconix si9433bd.pdf Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 1126 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
16+1.37 EUR
100+1.07 EUR
500+0.9 EUR
1000+0.74 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA406DJ-T1-GE3 SIA406DJ-T1-GE3 Vishay Siliconix sia406dj.pdf Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix sia425ed.pdf Description: MOSFET P-CH 20V 4.5A SC-70-6
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIA427DJ-T1-GE3 SIA427DJ-T1-GE3 Vishay Siliconix SIA427DJ.pdf Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 13803 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6924AEDQ-T1-GE3
SI6924AEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6968BEDQ-T1-GE3 si6968be.pdf
SI6968BEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 19691 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
13+1.73 EUR
100+1.05 EUR
500+0.8 EUR
1000+0.75 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6981DQ-T1-GE3 si6981dq.pdf
SI6981DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI6993DQ-T1-GE3 72369.pdf
SI6993DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.6A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7119DN-T1-GE3 si7119dn.pdf
SI7119DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V
auf Bestellung 8520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
12+1.89 EUR
50+1.42 EUR
100+1.26 EUR
500+0.99 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Si7120ADN-T1-GE3 Si7120ADN.PDF
Si7120ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
auf Bestellung 5981 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.65 EUR
100+1.92 EUR
500+1.54 EUR
1000+1.4 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7139DP-T1-GE3 si7139dp.pdf
SI7139DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+2.62 EUR
50+1.98 EUR
100+1.77 EUR
500+1.4 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7141DP-T1-GE3 si7141dp.pdf
SI7141DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 10 V
auf Bestellung 28153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.99 EUR
10+3.88 EUR
50+2.98 EUR
100+2.69 EUR
500+2.18 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7143DP-T1-GE3 si7143dp.pdf
SI7143DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16.1A, 10V
Power Dissipation (Max): 4.2W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 6942 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+2.42 EUR
100+1.63 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7190DP-T1-GE3 si7190dp.pdf
SI7190DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V
auf Bestellung 6123 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+3.14 EUR
100+2.5 EUR
500+2.12 EUR
1000+1.8 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7212DN-T1-GE3 si7212dn.pdf
SI7212DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 16004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.69 EUR
10+3.02 EUR
50+2.3 EUR
100+2.07 EUR
500+1.65 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7222DN-T1-GE3 73439.pdf
SI7222DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7232DN-T1-GE3 si7232dn.pdf
SI7232DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7236DP-T1-GE3 si7236dp.pdf
SI7236DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 60A PPAK SO-8
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7272DP-T1-GE3 si7272dp.pdf
SI7272DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 25A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 7307 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.67 EUR
10+2.34 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7288DP-T1-GE3 si7288dp.pdf
SI7288DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 43023 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
10+2.59 EUR
50+1.95 EUR
100+1.75 EUR
500+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7309DN-T1-GE3 si7309dn.pdf
SI7309DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 12529 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7403BDN-T1-GE3 73333.pdf
SI7403BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7431DP-T1-GE3 si7431dp.pdf
SI7431DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.06 EUR
10+6.68 EUR
100+4.76 EUR
500+3.94 EUR
1000+3.69 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7439DP-T1-GE3 si7439dp.pdf
SI7439DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 6335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.87 EUR
10+6.54 EUR
100+4.66 EUR
500+3.86 EUR
1000+3.59 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7456CDP-T1-GE3 si7456cd.pdf
SI7456CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V
auf Bestellung 2580 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.71 EUR
10+3.02 EUR
50+2.3 EUR
100+2.06 EUR
500+1.65 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7462DP-T1-GE3 si7462dp.pdf
SI7462DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7464DP-T1-GE3 si7464dp.pdf
SI7464DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.52 EUR
10+2.92 EUR
100+2.32 EUR
500+1.96 EUR
1000+1.67 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7469DP-T1-GE3 si7469dp.pdf
SI7469DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 48403 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.62 EUR
10+4.31 EUR
50+3.32 EUR
100+3 EUR
500+2.44 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7613DN-T1-GE3 si7613dn.pdf
SI7613DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
auf Bestellung 25857 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.17 EUR
11+2 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.95 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7617DN-T1-GE3 si7617dn.pdf
SI7617DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 63448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.73 EUR
13+1.73 EUR
50+1.29 EUR
100+1.14 EUR
500+0.89 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7619DN-T1-GE3 si7619dn.pdf
SI7619DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 24A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 91591 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7621DN-T1-GE3 si7621dn.pdf
SI7621DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7625DN-T1-GE3 si7625dn.pdf
SI7625DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4427 pF @ 15 V
auf Bestellung 1671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
11+2.06 EUR
100+1.38 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7629DN-T1-GE3 si7629dn.pdf
SI7629DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V
auf Bestellung 24057 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
13+1.69 EUR
100+1.31 EUR
500+1.11 EUR
1000+0.9 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7635DP-T1-GE3 si7635dp.pdf
SI7635DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 26A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7703EDN-T1-GE3 si7703edn.pdf
SI7703EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7772DP-T1-GE3 si7772dp.pdf
SI7772DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
auf Bestellung 2261 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7774DP-T1-GE3 si7774dp.pdf
SI7774DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
auf Bestellung 4517 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7810DN-T1-GE3 70689.pdf
SI7810DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7812DN-T1-GE3 si7812dn.pdf
SI7812DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 45900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.4 EUR
10+3.49 EUR
50+2.67 EUR
100+2.4 EUR
500+1.94 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7858BDP-T1-GE3 si7858bd.pdf
SI7858BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
auf Bestellung 15798 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.58 EUR
10+2.93 EUR
50+2.23 EUR
100+1.99 EUR
500+1.58 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7872DP-T1-GE3 si7872dp.pdf
SI7872DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7911DN-T1-GE3 72340.pdf
SI7911DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.2A 1212-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7923DN-T1-GE3 72622.pdf
SI7923DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 34266 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
10+2.5 EUR
100+1.99 EUR
500+1.69 EUR
1000+1.43 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7938DP-T1-GE3 si7938dp.pdf
SI7938DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 38747 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+2.8 EUR
50+2.12 EUR
100+1.9 EUR
500+1.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7946DP-T1-GE3 72282.pdf
SI7946DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7949DP-T1-GE3 73130.pdf
SI7949DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
auf Bestellung 16869 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI7956DP-T1-GE3 72960.pdf
SI7956DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.89 EUR
10+5.19 EUR
100+3.71 EUR
500+3.06 EUR
1000+2.84 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI7997DP-T1-GE3 si7997dp.pdf
SI7997DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 5113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.89 EUR
10+4.5 EUR
50+3.46 EUR
100+3.14 EUR
500+2.56 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI8445DB-T2-E1 si8445db.pdf
SI8445DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si8447DB-T2-E1 si8447db.pdf
Si8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Si8451DB-T2-E1 SI8451DB.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.8A MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8461DB-T2-E1 si8461db.pdf
SI8461DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8465DB-T2-E1 si8465db.pdf
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI8467DB-T2-E1 si8467db.pdf
SI8467DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8473EDB-T1-E1 si8473edb.pdf
SI8473EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8475EDB-T1-E1 si8475edb.pdf
SI8475EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI8499DB-T2-E1 si8499db.pdf
SI8499DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI8800EDB-T2-E1 si8800edb.pdf
SI8800EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
auf Bestellung 43887 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.4 EUR
24+0.87 EUR
50+0.64 EUR
100+0.56 EUR
500+0.43 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI9433BDY-T1-GE3 si9433bd.pdf
SI9433BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 1126 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
16+1.37 EUR
100+1.07 EUR
500+0.9 EUR
1000+0.74 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI9934BDY-T1-GE3
SI9934BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA406DJ-T1-GE3 sia406dj.pdf
SIA406DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIA427DJ-T1-GE3 SIA427DJ.pdf
SIA427DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 13803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 51 52 53 54 55 56 57 58 59 60 61 76 95 114 133 152 171 190 198  [ Nächste Seite >> ]