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SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix 72615.pdf Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
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SI7923DN-T1-GE3 SI7923DN-T1-GE3 Vishay Siliconix 72622.pdf Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
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SI7938DP-T1-GE3 SI7938DP-T1-GE3 Vishay Siliconix si7938dp.pdf Description: MOSFET 2N-CH 40V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
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SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix 72282.pdf Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
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SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Siliconix 73130.pdf Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
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SI7956DP-T1-GE3 SI7956DP-T1-GE3 Vishay Siliconix 72960.pdf Description: MOSFET 2N-CH 150V 2.6A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
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SI7997DP-T1-GE3 SI7997DP-T1-GE3 Vishay Siliconix si7997dp.pdf Description: MOSFET 2P-CH 30V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
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SI8445DB-T2-E1 SI8445DB-T2-E1 Vishay Siliconix si8445db.pdf Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
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Si8447DB-T2-E1 Si8447DB-T2-E1 Vishay Siliconix si8447db.pdf Description: MOSFET P-CH 20V 11A 6MICRO FOOT
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Si8451DB-T2-E1 Vishay Siliconix SI8451DB.pdf Description: MOSFET P-CH 20V 10.8A MICROFOOT
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SI8461DB-T2-E1 SI8461DB-T2-E1 Vishay Siliconix si8461db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
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SI8465DB-T2-E1 SI8465DB-T2-E1 Vishay Siliconix si8465db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
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SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix si8467db.pdf Description: MOSFET P-CH 20V MICROFOOT
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SI8473EDB-T1-E1 SI8473EDB-T1-E1 Vishay Siliconix si8473edb.pdf Description: MOSFET P-CH 20V 4MICROFOOT
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SI8475EDB-T1-E1 SI8475EDB-T1-E1 Vishay Siliconix si8475edb.pdf Description: MOSFET P-CH 20V MICROFOOT
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SI8499DB-T2-E1 SI8499DB-T2-E1 Vishay Siliconix si8499db.pdf Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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SI8800EDB-T2-E1 SI8800EDB-T2-E1 Vishay Siliconix si8800edb.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
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SI9433BDY-T1-GE3 SI9433BDY-T1-GE3 Vishay Siliconix si9433bd.pdf Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
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SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
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SIA406DJ-T1-GE3 SIA406DJ-T1-GE3 Vishay Siliconix sia406dj.pdf Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
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SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix sia425ed.pdf Description: MOSFET P-CH 20V 4.5A SC-70-6
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SIA427DJ-T1-GE3 SIA427DJ-T1-GE3 Vishay Siliconix SIA427DJ.pdf Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
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SIA433EDJ-T1-GE3 SIA433EDJ-T1-GE3 Vishay Siliconix sia433edj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
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SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 Vishay Siliconix sia517dj.pdf Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 Vishay Siliconix sia519edj.pdf Description: MOSFET N/P-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA533EDJ-T1-GE3 SIA533EDJ-T1-GE3 Vishay Siliconix sia533edj.pdf Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA778DJ-T1-GE3 SIA778DJ-T1-GE3 Vishay Siliconix sia778dj.pdf Description: MOSFET 2N-CH 12V/20V SC70-6
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SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3 Vishay Siliconix sia910edj.pdf Description: MOSFET 2N-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA923EDJ-T1-GE3 SIA923EDJ-T1-GE3 Vishay Siliconix sia923edj.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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SIA950DJ-T1-GE3 SIA950DJ-T1-GE3 Vishay Siliconix sia950dj.pdf Description: MOSFET 2N-CH 190V 0.95A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 190V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
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SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 Vishay Siliconix sia975dj.pdf Description: MOSFET 2P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 Vishay Siliconix sib406ed.pdf Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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SIB422EDK-T1-GE3 SIB422EDK-T1-GE3 Vishay Siliconix sib422edk.pdf Description: MOSFET N-CH 20V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
auf Bestellung 7389 Stücke:
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SIB433EDK-T1-GE3 SIB433EDK-T1-GE3 Vishay Siliconix sib433ed.pdf Description: MOSFET P-CH 20V 9A PPAK SC75-6
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SIB455EDK-T1-GE3 SIB455EDK-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 12V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Produkt ist nicht verfügbar
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SIB488DK-T1-GE3 SIB488DK-T1-GE3 Vishay Siliconix sib488dk.pdf Description: MOSFET N-CH 12V 9A SC75-6
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SiB900EDK-T1-GE3 SiB900EDK-T1-GE3 Vishay Siliconix sib900ed.pdf Description: MOSFET 2N-CH 20V 1.5A SC-75-6
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SIB912DK-T1-GE3 SIB912DK-T1-GE3 Vishay Siliconix sib912dk.pdf Description: MOSFET 2N-CH 20V 1.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
auf Bestellung 53107 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
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SIE818DF-T1-GE3 SIE818DF-T1-GE3 Vishay Siliconix sie818df.pdf Description: MOSFET N-CH 75V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
Produkt ist nicht verfügbar
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SIE820DF-T1-GE3 SIE820DF-T1-GE3 Vishay Siliconix sie820df.pdf Description: MOSFET N-CH 20V 50A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (S)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 730 Stücke:
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5+3.91 EUR
10+3.29 EUR
100+2.76 EUR
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SIE822DF-T1-GE3 SIE822DF-T1-GE3 Vishay Siliconix sie822df.pdf Description: MOSFET N-CH 20V 50A 10POLARPAK
auf Bestellung 1678 Stücke:
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10+4.78 EUR
100+3.84 EUR
500+3.16 EUR
1000+2.7 EUR
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SIE832DF-T1-GE3 SIE832DF-T1-GE3 Vishay Siliconix sie832df.pdf Description: MOSFET N-CH 40V 50A 10-POLARPAK
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SIE836DF-T1-GE3 SIE836DF-T1-GE3 Vishay Siliconix sie836df.pdf Description: MOSFET N-CH 200V 18.3A POLARPAK
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SIE848DF-T1-GE3 SIE848DF-T1-GE3 Vishay Siliconix sie848df.pdf Description: MOSFET N-CH 30V 60A POLARPAK
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SIE854DF-T1-GE3 SIE854DF-T1-GE3 Vishay Siliconix sie854df.pdf Description: MOSFET N-CH 100V 60A POLARPAK
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SIE860DF-T1-GE3 SIE860DF-T1-GE3 Vishay Siliconix sie860df.pdf Description: MOSFET N-CH 30V 60A POLARPAK
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SIE864DF-T1-GE3 SIE864DF-T1-GE3 Vishay Siliconix SIE864DF.pdf Description: MOSFET N-CH 30V 45A POLARPAK
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SIE868DF-T1-GE3 SIE868DF-T1-GE3 Vishay Siliconix sie868df.pdf Description: MOSFET N-CH 40V 60A POLARPAK
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SIE874DF-T1-GE3 SIE874DF-T1-GE3 Vishay Siliconix SIE874DF.pdf Description: MOSFET N-CH 20V 60A 10POLARPAK
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SIE878DF-T1-GE3 SIE878DF-T1-GE3 Vishay Siliconix sie878df.pdf Description: MOSFET N-CH 25V 45A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Produkt ist nicht verfügbar
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SIJ420DP-T1-GE3 SIJ420DP-T1-GE3 Vishay Siliconix sij420dp.pdf Description: MOSFET N-CH 20V 50A PPAK SO-8
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SIJ458DP-T1-GE3 SIJ458DP-T1-GE3 Vishay Siliconix sij458dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 15 V
Produkt ist nicht verfügbar
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SIR158DP-T1-GE3 SIR158DP-T1-GE3 Vishay Siliconix sir158dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
auf Bestellung 9641 Stücke:
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5+3.68 EUR
10+2.53 EUR
100+1.8 EUR
500+1.44 EUR
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SIR164DP-T1-GE3 SIR164DP-T1-GE3 Vishay Siliconix sir164dp-new.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V
auf Bestellung 4516 Stücke:
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8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.21 EUR
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SIR412DP-T1-GE3 SIR412DP-T1-GE3 Vishay Siliconix sir412dp.pdf Description: MOSFET N-CH 25V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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SIR414DP-T1-GE3 SIR414DP-T1-GE3 Vishay Siliconix sir414dp.pdf Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V
auf Bestellung 5034 Stücke:
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5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
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SIR426DP-T1-GE3 SIR426DP-T1-GE3 Vishay Siliconix sir426dp.pdf Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
auf Bestellung 22298 Stücke:
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10+1.9 EUR
14+1.31 EUR
100+1 EUR
500+0.78 EUR
1000+0.72 EUR
Mindestbestellmenge: 10
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SIR800DP-T1-GE3 SIR800DP-T1-GE3 Vishay Siliconix sir800dp.pdf Description: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 10 V
auf Bestellung 3969 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.96 EUR
10+2.54 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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SIR802DP-T1-GE3 SIR802DP-T1-GE3 Vishay Siliconix sir802dp.pdf Description: MOSFET N-CH 20V 30A PPAK SO-8
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SIR804DP-T1-GE3 SIR804DP-T1-GE3 Vishay Siliconix sir804dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V
auf Bestellung 1138 Stücke:
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5+3.92 EUR
10+3.19 EUR
100+2.37 EUR
500+2.17 EUR
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SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
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SI7923DN-T1-GE3 72622.pdf
SI7923DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 34266 Stücke:
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Anzahl Preis
7+2.53 EUR
10+2.1 EUR
100+1.67 EUR
500+1.42 EUR
1000+1.2 EUR
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SI7938DP-T1-GE3 si7938dp.pdf
SI7938DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 15280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.2 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.15 EUR
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SI7946DP-T1-GE3 72282.pdf
SI7946DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
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SI7949DP-T1-GE3 73130.pdf
SI7949DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
auf Bestellung 16869 Stücke:
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SI7956DP-T1-GE3 72960.pdf
SI7956DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 2750 Stücke:
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4+5.79 EUR
10+4.36 EUR
100+3.12 EUR
500+2.57 EUR
1000+2.39 EUR
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SI7997DP-T1-GE3 si7997dp.pdf
SI7997DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2228 Stücke:
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4+4.4 EUR
10+2.85 EUR
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500+1.63 EUR
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SI8445DB-T2-E1 si8445db.pdf
SI8445DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
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Si8447DB-T2-E1 si8447db.pdf
Si8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
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Si8451DB-T2-E1 SI8451DB.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.8A MICROFOOT
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SI8461DB-T2-E1 si8461db.pdf
SI8461DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
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SI8465DB-T2-E1 si8465db.pdf
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
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SI8467DB-T2-E1 si8467db.pdf
SI8467DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
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SI8473EDB-T1-E1 si8473edb.pdf
SI8473EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
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SI8475EDB-T1-E1 si8475edb.pdf
SI8475EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
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SI8499DB-T2-E1 si8499db.pdf
SI8499DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 11900 Stücke:
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13+1.41 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
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SI8800EDB-T2-E1 si8800edb.pdf
SI8800EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
auf Bestellung 10724 Stücke:
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Anzahl Preis
16+1.13 EUR
25+0.73 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
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SI9433BDY-T1-GE3 si9433bd.pdf
SI9433BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 1126 Stücke:
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13+1.41 EUR
16+1.15 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
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SI9934BDY-T1-GE3
SI9934BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SIA406DJ-T1-GE3 sia406dj.pdf
SIA406DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Produkt ist nicht verfügbar
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SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
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SIA427DJ-T1-GE3 SIA427DJ.pdf
SIA427DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 13867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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SIA433EDJ-T1-GE3 sia433edj.pdf
SIA433EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
auf Bestellung 8146 Stücke:
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Anzahl Preis
17+1.09 EUR
19+0.95 EUR
100+0.66 EUR
500+0.55 EUR
1000+0.47 EUR
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SIA517DJ-T1-GE3 sia517dj.pdf
SIA517DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 22278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.85 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
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SIA519EDJ-T1-GE3 sia519edj.pdf
SIA519EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 254168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
25+0.73 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
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SIA533EDJ-T1-GE3 sia533edj.pdf
SIA533EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 3691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
23+0.8 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 18
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SIA778DJ-T1-GE3 sia778dj.pdf
SIA778DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V/20V SC70-6
auf Bestellung 874 Stücke:
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SIA910EDJ-T1-GE3 sia910edj.pdf
SIA910EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 18421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
18+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 11
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SIA923EDJ-T1-GE3 sia923edj.pdf
SIA923EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
auf Bestellung 3123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
18+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.46 EUR
Mindestbestellmenge: 11
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SIA950DJ-T1-GE3 sia950dj.pdf
SIA950DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 190V 0.95A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 190V
Current - Continuous Drain (Id) @ 25°C: 950mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIA975DJ-T1-GE3 sia975dj.pdf
SIA975DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 30964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.94 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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SIB406EDK-T1-GE3 sib406ed.pdf
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 1 Stücke:
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SIB422EDK-T1-GE3 sib422edk.pdf
SIB422EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
auf Bestellung 7389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
26+0.68 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.3 EUR
Mindestbestellmenge: 22
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SIB433EDK-T1-GE3 sib433ed.pdf
SIB433EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6
Produkt ist nicht verfügbar
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SIB455EDK-T1-GE3
SIB455EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Produkt ist nicht verfügbar
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SIB488DK-T1-GE3 sib488dk.pdf
SIB488DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 9A SC75-6
auf Bestellung 6038 Stücke:
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SiB900EDK-T1-GE3 sib900ed.pdf
SiB900EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
auf Bestellung 465 Stücke:
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SIB912DK-T1-GE3 sib912dk.pdf
SIB912DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
auf Bestellung 53107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
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SIE818DF-T1-GE3 sie818df.pdf
SIE818DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
Produkt ist nicht verfügbar
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SIE820DF-T1-GE3 sie820df.pdf
SIE820DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (S)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.91 EUR
10+3.29 EUR
100+2.76 EUR
500+2.44 EUR
Mindestbestellmenge: 5
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SIE822DF-T1-GE3 sie822df.pdf
SIE822DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK
auf Bestellung 1678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+4.78 EUR
100+3.84 EUR
500+3.16 EUR
1000+2.7 EUR
Mindestbestellmenge: 4
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SIE832DF-T1-GE3 sie832df.pdf
SIE832DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A 10-POLARPAK
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
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SIE836DF-T1-GE3 sie836df.pdf
SIE836DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.3A POLARPAK
Produkt ist nicht verfügbar
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SIE848DF-T1-GE3 sie848df.pdf
SIE848DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Produkt ist nicht verfügbar
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SIE854DF-T1-GE3 sie854df.pdf
SIE854DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A POLARPAK
Produkt ist nicht verfügbar
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SIE860DF-T1-GE3 sie860df.pdf
SIE860DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Produkt ist nicht verfügbar
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SIE864DF-T1-GE3 SIE864DF.pdf
SIE864DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45A POLARPAK
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
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SIE868DF-T1-GE3 sie868df.pdf
SIE868DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A POLARPAK
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
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SIE874DF-T1-GE3 SIE874DF.pdf
SIE874DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)
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SIE878DF-T1-GE3 sie878df.pdf
SIE878DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 45A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Produkt ist nicht verfügbar
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SIJ420DP-T1-GE3 sij420dp.pdf
SIJ420DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
auf Bestellung 500 Stücke:
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SIJ458DP-T1-GE3 sij458dp.pdf
SIJ458DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 15 V
Produkt ist nicht verfügbar
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SIR158DP-T1-GE3 sir158dp.pdf
SIR158DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
auf Bestellung 9641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.53 EUR
100+1.8 EUR
500+1.44 EUR
Mindestbestellmenge: 5
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SIR164DP-T1-GE3 sir164dp-new.pdf
SIR164DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V
auf Bestellung 4516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
10+1.84 EUR
100+1.43 EUR
500+1.21 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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SIR412DP-T1-GE3 sir412dp.pdf
SIR412DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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SIR414DP-T1-GE3 sir414dp.pdf
SIR414DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V
auf Bestellung 5034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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SIR426DP-T1-GE3 sir426dp.pdf
SIR426DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
auf Bestellung 22298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
14+1.31 EUR
100+1 EUR
500+0.78 EUR
1000+0.72 EUR
Mindestbestellmenge: 10
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SIR800DP-T1-GE3 sir800dp.pdf
SIR800DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 10 V
auf Bestellung 3969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+2.54 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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SIR802DP-T1-GE3 sir802dp.pdf
SIR802DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Produkt ist nicht verfügbar
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SIR804DP-T1-GE3 sir804dp.pdf
SIR804DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V
auf Bestellung 1138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+3.19 EUR
100+2.37 EUR
500+2.17 EUR
Mindestbestellmenge: 5
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