Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10949) > Seite 59 nach 183

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 55 56 57 58 59 60 61 62 63 64 72 90 108 126 144 162 180 183  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SI7222DN-T1-GE3 SI7222DN-T1-GE3 Vishay Siliconix 73439.pdf Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Produkt ist nicht verfügbar
SI7232DN-T1-GE3 SI7232DN-T1-GE3 Vishay Siliconix si7232dn.pdf Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 11880 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SI7236DP-T1-GE3 SI7236DP-T1-GE3 Vishay Siliconix si7236dp.pdf Description: MOSFET 2N-CH 20V 60A PPAK SO-8
auf Bestellung 3014 Stücke:
Lieferzeit 21-28 Tag (e)
SI7272DP-T1-GE3 SI7272DP-T1-GE3 Vishay Siliconix si7272dp.pdf Description: MOSFET 2N-CH 30V 25A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 29500 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.51 EUR
10+ 3.15 EUR
100+ 2.46 EUR
500+ 2.03 EUR
1000+ 1.6 EUR
Mindestbestellmenge: 8
SI7288DP-T1-GE3 SI7288DP-T1-GE3 Vishay Siliconix si7288dp.pdf Description: MOSFET 2N-CH 40V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 112179 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
10+ 2.88 EUR
100+ 2.24 EUR
500+ 1.9 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 8
SI7309DN-T1-GE3 SI7309DN-T1-GE3 Vishay Siliconix si7309dn.pdf Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 4943 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.39 EUR
14+ 1.96 EUR
100+ 1.53 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 11
SI7403BDN-T1-GE3 SI7403BDN-T1-GE3 Vishay Siliconix 73333.pdf Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix si7431dp.pdf Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 15292 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.7 EUR
10+ 8.72 EUR
100+ 7.14 EUR
500+ 6.08 EUR
1000+ 5.13 EUR
Mindestbestellmenge: 3
SI7439DP-T1-GE3 SI7439DP-T1-GE3 Vishay Siliconix si7439dp.pdf Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 7547 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.2 EUR
10+ 7.72 EUR
100+ 6.24 EUR
500+ 5.55 EUR
1000+ 4.75 EUR
Mindestbestellmenge: 3
SI7454CDP-T1-GE3 SI7454CDP-T1-GE3 Vishay Siliconix si7454cd.pdf Description: MOSFET N-CH 100V 22A PPAK SO-8
Produkt ist nicht verfügbar
SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 Vishay Siliconix si7456cd.pdf Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V
Produkt ist nicht verfügbar
SI7462DP-T1-GE3 SI7462DP-T1-GE3 Vishay Siliconix si7462dp.pdf Description: MOSFET N-CH 200V 2.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7464DP-T1-GE3 SI7464DP-T1-GE3 Vishay Siliconix si7464dp.pdf Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2110 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.37 EUR
10+ 3.62 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
Mindestbestellmenge: 6
SI7469DP-T1-GE3 SI7469DP-T1-GE3 Vishay Siliconix si7469dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 23328 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.14 EUR
10+ 5.11 EUR
100+ 4.07 EUR
500+ 3.44 EUR
1000+ 2.92 EUR
Mindestbestellmenge: 5
SI7613DN-T1-GE3 SI7613DN-T1-GE3 Vishay Siliconix si7613dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
auf Bestellung 52730 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.47 EUR
13+ 2.03 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
Mindestbestellmenge: 11
SI7617DN-T1-GE3 SI7617DN-T1-GE3 Vishay Siliconix si7617dn.pdf Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 202254 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
23+ 1.18 EUR
100+ 0.91 EUR
500+ 0.77 EUR
Mindestbestellmenge: 19
SI7619DN-T1-GE3 SI7619DN-T1-GE3 Vishay Siliconix si7619dn.pdf Description: MOSFET P-CH 30V 24A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 114319 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.92 EUR
16+ 1.65 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
SI7621DN-T1-GE3 SI7621DN-T1-GE3 Vishay Siliconix si7621dn.pdf Description: MOSFET P-CH 20V 4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
SI7625DN-T1-GE3 SI7625DN-T1-GE3 Vishay Siliconix si7625dn.pdf Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4427 pF @ 15 V
auf Bestellung 24372 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.6 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 10
SI7629DN-T1-GE3 SI7629DN-T1-GE3 Vishay Siliconix si7629dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V
auf Bestellung 24057 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
SI7635DP-T1-GE3 SI7635DP-T1-GE3 Vishay Siliconix si7635dp.pdf Description: MOSFET P-CH 20V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 26A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 10 V
Produkt ist nicht verfügbar
SI7703EDN-T1-GE3 SI7703EDN-T1-GE3 Vishay Siliconix si7703edn.pdf Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK
Produkt ist nicht verfügbar
SI7772DP-T1-GE3 SI7772DP-T1-GE3 Vishay Siliconix si7772dp.pdf Description: MOSFET N-CH 30V 35.6A PPAK SO-8
auf Bestellung 2261 Stücke:
Lieferzeit 21-28 Tag (e)
SI7774DP-T1-GE3 SI7774DP-T1-GE3 Vishay Siliconix si7774dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
auf Bestellung 4517 Stücke:
Lieferzeit 21-28 Tag (e)
SI7810DN-T1-GE3 SI7810DN-T1-GE3 Vishay Siliconix 70689.pdf Description: MOSFET N-CH 100V 3.4A PPAK1212-8
auf Bestellung 1440 Stücke:
Lieferzeit 21-28 Tag (e)
SI7812DN-T1-GE3 SI7812DN-T1-GE3 Vishay Siliconix si7812dn.pdf Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 53877 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7850DP-T1-GE3 SI7850DP-T1-GE3 Vishay Siliconix 71625.pdf Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
auf Bestellung 3450 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.6 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 6
SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 Vishay Siliconix si7858bd.pdf Description: MOSFET N-CH 12V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
auf Bestellung 3480 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.14 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.69 EUR
Mindestbestellmenge: 7
SI7872DP-T1-GE3 SI7872DP-T1-GE3 Vishay Siliconix si7872dp.pdf Description: MOSFET 2N-CH 30V 6.4A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7900AEDN-T1-GE3 SI7900AEDN-T1-GE3 Vishay Siliconix si7900aedn.pdf Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
SI7911DN-T1-GE3 SI7911DN-T1-GE3 Vishay Siliconix 72340.pdf Description: MOSFET 2P-CH 20V 4.2A 1212-8
Produkt ist nicht verfügbar
SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix 72615.pdf Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
auf Bestellung 7489 Stücke:
Lieferzeit 21-28 Tag (e)
SI7923DN-T1-GE3 SI7923DN-T1-GE3 Vishay Siliconix 72622.pdf Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 34266 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.74 EUR
10+ 3.1 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 7
SI7938DP-T1-GE3 SI7938DP-T1-GE3 Vishay Siliconix si7938dp.pdf Description: MOSFET 2N-CH 40V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 12039 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 8
SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix 72282.pdf Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Produkt ist nicht verfügbar
SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Siliconix 73130.pdf Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
auf Bestellung 16869 Stücke:
Lieferzeit 21-28 Tag (e)
SI7956DP-T1-GE3 SI7956DP-T1-GE3 Vishay Siliconix 72960.pdf Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 4850 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.93 EUR
10+ 7.12 EUR
100+ 5.84 EUR
500+ 4.97 EUR
1000+ 4.19 EUR
Mindestbestellmenge: 4
SI7997DP-T1-GE3 SI7997DP-T1-GE3 Vishay Siliconix si7997dp.pdf Description: MOSFET 2P-CH 30V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 16611 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.1 EUR
10+ 4.22 EUR
100+ 3.36 EUR
500+ 2.84 EUR
1000+ 2.41 EUR
Mindestbestellmenge: 6
SI8445DB-T2-E1 SI8445DB-T2-E1 Vishay Siliconix si8445db.pdf Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
Produkt ist nicht verfügbar
Si8447DB-T2-E1 Si8447DB-T2-E1 Vishay Siliconix si8447db.pdf Description: MOSFET P-CH 20V 11A 6MICRO FOOT
auf Bestellung 135 Stücke:
Lieferzeit 21-28 Tag (e)
Si8451DB-T2-E1 Vishay Siliconix SI8451DB.pdf Description: MOSFET P-CH 20V 10.8A MICROFOOT
Produkt ist nicht verfügbar
SI8461DB-T2-E1 SI8461DB-T2-E1 Vishay Siliconix si8461db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
SI8465DB-T2-E1 SI8465DB-T2-E1 Vishay Siliconix si8465db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
auf Bestellung 565 Stücke:
Lieferzeit 21-28 Tag (e)
SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix si8467db.pdf Description: MOSFET P-CH 20V MICROFOOT
Produkt ist nicht verfügbar
SI8473EDB-T1-E1 SI8473EDB-T1-E1 Vishay Siliconix si8473edb.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
SI8475EDB-T1-E1 SI8475EDB-T1-E1 Vishay Siliconix si8475edb.pdf Description: MOSFET P-CH 20V MICROFOOT
auf Bestellung 2750 Stücke:
Lieferzeit 21-28 Tag (e)
SI8499DB-T2-E1 SI8499DB-T2-E1 Vishay Siliconix si8499db.pdf Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 8505 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.73 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 17
SI8800EDB-T2-E1 SI8800EDB-T2-E1 Vishay Siliconix si8800edb.pdf Description: MOSFET N-CH 20V 4MICROFOOT
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
26+ 1.01 EUR
Mindestbestellmenge: 22
SI9433BDY-T1-GE3 SI9433BDY-T1-GE3 Vishay Siliconix si9433bd.pdf Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 8636 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SIA406DJ-T1-GE3 SIA406DJ-T1-GE3 Vishay Siliconix sia406dj.pdf Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Produkt ist nicht verfügbar
SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix sia425ed.pdf Description: MOSFET P-CH 20V 4.5A SC-70-6
auf Bestellung 1374 Stücke:
Lieferzeit 21-28 Tag (e)
SIA427DJ-T1-GE3 SIA427DJ-T1-GE3 Vishay Siliconix SIA427DJ.pdf Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 22828 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
24+ 1.12 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
SIA433EDJ-T1-GE3 SIA433EDJ-T1-GE3 Vishay Siliconix sia433edj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
auf Bestellung 8146 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.61 EUR
19+ 1.4 EUR
100+ 0.97 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 17
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 Vishay Siliconix sia517dj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 37173 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 Vishay Siliconix sia519edj.pdf Description: MOSFET N/P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 293676 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA533EDJ-T1-GE3 SIA533EDJ-T1-GE3 Vishay Siliconix sia533edj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIA778DJ-T1-GE3 SIA778DJ-T1-GE3 Vishay Siliconix sia778dj.pdf Description: MOSFET 2N-CH 12V/20V SC70-6
auf Bestellung 874 Stücke:
Lieferzeit 21-28 Tag (e)
SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3 Vishay Siliconix sia910edj.pdf Description: MOSFET 2N-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 16832 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
SIA923EDJ-T1-GE3 SIA923EDJ-T1-GE3 Vishay Siliconix sia923edj.pdf Description: MOSFET 2P-CH 20V 4.5A SC-70-6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
19+ 1.4 EUR
100+ 1.07 EUR
500+ 0.85 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 17
SI7222DN-T1-GE3 73439.pdf
SI7222DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
Produkt ist nicht verfügbar
SI7232DN-T1-GE3 si7232dn.pdf
SI7232DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 23W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 11880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SI7236DP-T1-GE3 si7236dp.pdf
SI7236DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 60A PPAK SO-8
auf Bestellung 3014 Stücke:
Lieferzeit 21-28 Tag (e)
SI7272DP-T1-GE3 si7272dp.pdf
SI7272DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 25A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 29500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.51 EUR
10+ 3.15 EUR
100+ 2.46 EUR
500+ 2.03 EUR
1000+ 1.6 EUR
Mindestbestellmenge: 8
SI7288DP-T1-GE3 si7288dp.pdf
SI7288DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 112179 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
10+ 2.88 EUR
100+ 2.24 EUR
500+ 1.9 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 8
SI7309DN-T1-GE3 si7309dn.pdf
SI7309DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 4943 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.39 EUR
14+ 1.96 EUR
100+ 1.53 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 11
SI7403BDN-T1-GE3 73333.pdf
SI7403BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
SI7431DP-T1-GE3 si7431dp.pdf
SI7431DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 15292 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.7 EUR
10+ 8.72 EUR
100+ 7.14 EUR
500+ 6.08 EUR
1000+ 5.13 EUR
Mindestbestellmenge: 3
SI7439DP-T1-GE3 si7439dp.pdf
SI7439DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 7547 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.2 EUR
10+ 7.72 EUR
100+ 6.24 EUR
500+ 5.55 EUR
1000+ 4.75 EUR
Mindestbestellmenge: 3
SI7454CDP-T1-GE3 si7454cd.pdf
SI7454CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 22A PPAK SO-8
Produkt ist nicht verfügbar
SI7456CDP-T1-GE3 si7456cd.pdf
SI7456CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V
Produkt ist nicht verfügbar
SI7462DP-T1-GE3 si7462dp.pdf
SI7462DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7464DP-T1-GE3 si7464dp.pdf
SI7464DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2110 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
10+ 3.62 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
Mindestbestellmenge: 6
SI7469DP-T1-GE3 si7469dp.pdf
SI7469DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 23328 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.14 EUR
10+ 5.11 EUR
100+ 4.07 EUR
500+ 3.44 EUR
1000+ 2.92 EUR
Mindestbestellmenge: 5
SI7613DN-T1-GE3 si7613dn.pdf
SI7613DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
auf Bestellung 52730 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.47 EUR
13+ 2.03 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
Mindestbestellmenge: 11
SI7617DN-T1-GE3 si7617dn.pdf
SI7617DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 202254 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
23+ 1.18 EUR
100+ 0.91 EUR
500+ 0.77 EUR
Mindestbestellmenge: 19
SI7619DN-T1-GE3 si7619dn.pdf
SI7619DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 24A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 114319 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.92 EUR
16+ 1.65 EUR
100+ 1.15 EUR
500+ 0.96 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
SI7621DN-T1-GE3 si7621dn.pdf
SI7621DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
SI7625DN-T1-GE3 si7625dn.pdf
SI7625DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4427 pF @ 15 V
auf Bestellung 24372 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.6 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 10
SI7629DN-T1-GE3 si7629dn.pdf
SI7629DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 10 V
auf Bestellung 24057 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
SI7635DP-T1-GE3 si7635dp.pdf
SI7635DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 26A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 10 V
Produkt ist nicht verfügbar
SI7703EDN-T1-GE3 si7703edn.pdf
SI7703EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK
Produkt ist nicht verfügbar
SI7772DP-T1-GE3 si7772dp.pdf
SI7772DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
auf Bestellung 2261 Stücke:
Lieferzeit 21-28 Tag (e)
SI7774DP-T1-GE3 si7774dp.pdf
SI7774DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
auf Bestellung 4517 Stücke:
Lieferzeit 21-28 Tag (e)
SI7810DN-T1-GE3 70689.pdf
SI7810DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
auf Bestellung 1440 Stücke:
Lieferzeit 21-28 Tag (e)
SI7812DN-T1-GE3 si7812dn.pdf
SI7812DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 53877 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7850DP-T1-GE3 71625.pdf
SI7850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
auf Bestellung 3450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 6
SI7858BDP-T1-GE3 si7858bd.pdf
SI7858BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
auf Bestellung 3480 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.14 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.69 EUR
Mindestbestellmenge: 7
SI7872DP-T1-GE3 si7872dp.pdf
SI7872DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7900AEDN-T1-GE3 si7900aedn.pdf
SI7900AEDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
SI7911DN-T1-GE3 72340.pdf
SI7911DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.2A 1212-8
Produkt ist nicht verfügbar
SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
auf Bestellung 7489 Stücke:
Lieferzeit 21-28 Tag (e)
SI7923DN-T1-GE3 72622.pdf
SI7923DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 34266 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.74 EUR
10+ 3.1 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 7
SI7938DP-T1-GE3 si7938dp.pdf
SI7938DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 12039 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 8
SI7946DP-T1-GE3 72282.pdf
SI7946DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Produkt ist nicht verfügbar
SI7949DP-T1-GE3 73130.pdf
SI7949DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
auf Bestellung 16869 Stücke:
Lieferzeit 21-28 Tag (e)
SI7956DP-T1-GE3 72960.pdf
SI7956DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 4850 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.93 EUR
10+ 7.12 EUR
100+ 5.84 EUR
500+ 4.97 EUR
1000+ 4.19 EUR
Mindestbestellmenge: 4
SI7997DP-T1-GE3 si7997dp.pdf
SI7997DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 16611 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.1 EUR
10+ 4.22 EUR
100+ 3.36 EUR
500+ 2.84 EUR
1000+ 2.41 EUR
Mindestbestellmenge: 6
SI8445DB-T2-E1 si8445db.pdf
SI8445DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
Produkt ist nicht verfügbar
Si8447DB-T2-E1 si8447db.pdf
Si8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
auf Bestellung 135 Stücke:
Lieferzeit 21-28 Tag (e)
Si8451DB-T2-E1 SI8451DB.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.8A MICROFOOT
Produkt ist nicht verfügbar
SI8461DB-T2-E1 si8461db.pdf
SI8461DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
SI8465DB-T2-E1 si8465db.pdf
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
auf Bestellung 565 Stücke:
Lieferzeit 21-28 Tag (e)
SI8467DB-T2-E1 si8467db.pdf
SI8467DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Produkt ist nicht verfügbar
SI8473EDB-T1-E1 si8473edb.pdf
SI8473EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Produkt ist nicht verfügbar
SI8475EDB-T1-E1 si8475edb.pdf
SI8475EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
auf Bestellung 2750 Stücke:
Lieferzeit 21-28 Tag (e)
SI8499DB-T2-E1 si8499db.pdf
SI8499DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 8505 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.73 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 17
SI8800EDB-T2-E1 si8800edb.pdf
SI8800EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
26+ 1.01 EUR
Mindestbestellmenge: 22
SI9433BDY-T1-GE3 si9433bd.pdf
SI9433BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 8636 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SI9934BDY-T1-GE3
SI9934BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SIA406DJ-T1-GE3 sia406dj.pdf
SIA406DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Produkt ist nicht verfügbar
SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
auf Bestellung 1374 Stücke:
Lieferzeit 21-28 Tag (e)
SIA427DJ-T1-GE3 SIA427DJ.pdf
SIA427DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 22828 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
24+ 1.12 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
SIA433EDJ-T1-GE3 sia433edj.pdf
SIA433EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
auf Bestellung 8146 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.61 EUR
19+ 1.4 EUR
100+ 0.97 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 17
SIA517DJ-T1-GE3 sia517dj.pdf
SIA517DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 37173 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
SIA519EDJ-T1-GE3 sia519edj.pdf
SIA519EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 293676 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA533EDJ-T1-GE3 sia533edj.pdf
SIA533EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIA778DJ-T1-GE3 sia778dj.pdf
SIA778DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V/20V SC70-6
auf Bestellung 874 Stücke:
Lieferzeit 21-28 Tag (e)
SIA910EDJ-T1-GE3 sia910edj.pdf
SIA910EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 16832 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
SIA923EDJ-T1-GE3 sia923edj.pdf
SIA923EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC-70-6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
19+ 1.4 EUR
100+ 1.07 EUR
500+ 0.85 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 17
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 55 56 57 58 59 60 61 62 63 64 72 90 108 126 144 162 180 183  [ Nächste Seite >> ]