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SI7703EDN-T1-GE3 SI7703EDN-T1-GE3 Vishay Siliconix si7703edn.pdf Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK
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SI7774DP-T1-GE3 SI7774DP-T1-GE3 Vishay Siliconix si7774dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
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SI7911DN-T1-GE3 SI7911DN-T1-GE3 Vishay Siliconix 72340.pdf Description: MOSFET 2P-CH 20V 4.2A 1212-8
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SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix 72615.pdf Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
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SI7946DP-T1-GE3 SI7946DP-T1-GE3 Vishay Siliconix 72282.pdf Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
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SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Siliconix 73130.pdf Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
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Si8451DB-T2-E1 Vishay Siliconix SI8451DB.pdf Description: MOSFET P-CH 20V 10.8A MICROFOOT
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SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix si8467db.pdf Description: MOSFET P-CH 20V MICROFOOT
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SI8475EDB-T1-E1 SI8475EDB-T1-E1 Vishay Siliconix si8475edb.pdf Description: MOSFET P-CH 20V MICROFOOT
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SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 Vishay Siliconix sia425ed.pdf Description: MOSFET P-CH 20V 4.5A SC-70-6
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SIA778DJ-T1-GE3 SIA778DJ-T1-GE3 Vishay Siliconix sia778dj.pdf Description: MOSFET 2N-CH 12V/20V SC70-6
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SIB488DK-T1-GE3 SIB488DK-T1-GE3 Vishay Siliconix sib488dk.pdf Description: MOSFET N-CH 12V 9A SC75-6
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SIE832DF-T1-GE3 SIE832DF-T1-GE3 Vishay Siliconix sie832df.pdf Description: MOSFET N-CH 40V 50A 10-POLARPAK
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SIE836DF-T1-GE3 SIE836DF-T1-GE3 Vishay Siliconix sie836df.pdf Description: MOSFET N-CH 200V 18.3A POLARPAK
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SIE854DF-T1-GE3 SIE854DF-T1-GE3 Vishay Siliconix sie854df.pdf Description: MOSFET N-CH 100V 60A POLARPAK
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SIE860DF-T1-GE3 SIE860DF-T1-GE3 Vishay Siliconix sie860df.pdf Description: MOSFET N-CH 30V 60A POLARPAK
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SIE864DF-T1-GE3 SIE864DF-T1-GE3 Vishay Siliconix SIE864DF.pdf Description: MOSFET N-CH 30V 45A POLARPAK
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SIE868DF-T1-GE3 SIE868DF-T1-GE3 Vishay Siliconix sie868df.pdf Description: MOSFET N-CH 40V 60A POLARPAK
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SIJ420DP-T1-GE3 SIJ420DP-T1-GE3 Vishay Siliconix sij420dp.pdf Description: MOSFET N-CH 20V 50A PPAK SO-8
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SIR838DP-T1-GE3 SIR838DP-T1-GE3 Vishay Siliconix sir838dp.pdf Description: MOSFET N-CH 150V 35A PPAK SO-8
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SIR844DP-T1-GE3 SIR844DP-T1-GE3 Vishay Siliconix sir844dp.pdf Description: MOSFET N-CH 25V 50A PPAK SO-8
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SIR862DP-T1-GE3 SIR862DP-T1-GE3 Vishay Siliconix sir862dp.pdf Description: MOSFET N-CH 25V 50A PPAK SO-8
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SI1072X-T1-GE3 SI1072X-T1-GE3 Vishay Siliconix si1072x.pdf Description: MOSFET N-CH 30V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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SI1033X-T1-GE3 SI1033X-T1-GE3 Vishay Siliconix 71428.pdf Description: MOSFET 2P-CH 20V 0.145A SC89
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SI1058X-T1-GE3 SI1058X-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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2N7002K-T1-GE3 2N7002K-T1-GE3 Vishay Siliconix 2n7002k.pdf Description: MOSFET N-CH 60V 300MA TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
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2N7002-T1-E3 2N7002-T1-E3 Vishay Siliconix 70226.pdf Description: MOSFET N-CH 60V 115MA TO236
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
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2N7002-T1-GE3 2N7002-T1-GE3 Vishay Siliconix 70226.pdf Description: MOSFET N-CH 60V 115MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
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DG2001DV-T1-E3 DG2001DV-T1-E3 Vishay Siliconix DG2001.pdf Description: IC SWITCH SPDT X 1 7OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -70dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel Capacitance (CS(off), CD(off)): 17pF
Current - Leakage (IS(off)) (Max): 900pA
Part Status: Obsolete
Number of Circuits: 1
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DG2002DL-T1-E3 DG2002DL-T1-E3 Vishay Siliconix Description: IC SWITCH SPDT X 1 7.8OHM SC70-6
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 8ns, 6ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -69dB @ 1MHz
Charge Injection: 5pC
Supplier Device Package: SC-70-6
On-State Resistance (Max): 7.8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
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DG2003DQ-T1-E3 DG2003DQ-T1-E3 Vishay Siliconix 71754.pdf Description: IC SW SPST-NOX2 2.5OHM 10MSOP
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -67dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 51pF
Switch Time (Ton, Toff) (Max): 28ns, 22ns
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DG2004DQ-T1-E3 DG2004DQ-T1-E3 Vishay Siliconix 71754.pdf Description: IC SWITCH 2 X SPST 2.5 OHM 8MSOP
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DG2005DQ-T1-E3 DG2005DQ-T1-E3 Vishay Siliconix 71754.pdf Description: IC SWITCH 2 X SPST 2.5 OHM 8MSOP
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DG200BDJ-E3 DG200BDJ-E3 Vishay Siliconix dg200b.pdf Description: IC SWITCH DUAL SPST 14DIP
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DG2011DXA-T1-E3 DG2011DXA-T1-E3 Vishay Siliconix dg2011.pdf Description: IC SWITCH SPDT SC89-6
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DG2012DL-T1-E3 DG2012DL-T1-E3 Vishay Siliconix Description: IC SWITCH SPDT X 1 1.8OHM SC70-6
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 20pF
Switch Time (Ton, Toff) (Max): 38ns, 32ns
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -64dB @ 1MHz
Charge Injection: 20pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: SC-70-6
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DG2015DN-T1-E4 DG2015DN-T1-E4 Vishay Siliconix 71971.pdf Description: IC SWITCH DUAL DPDT 16QFN
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DG2016DQ-T1-E3 DG2016DQ-T1-E3 Vishay Siliconix dg2016.pdf Description: IC SWITCH DUAL SPDT 10MSOP
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DG2017DN-T1-E4 DG2017DN-T1-E4 Vishay Siliconix dg2017.pdf Description: IC SWITCH DPDT X 2 3.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3.7Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 2pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 300mOhm (Max)
Switch Time (Ton, Toff) (Max): 85ns, 35ns
Channel Capacitance (CS(off), CD(off)): 43pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
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DG2018DN-T1-E4 DG2018DN-T1-E4 Vishay Siliconix 72342.pdf Description: IC SWITCH DPDT X 2 8OHM 16QFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 7.5pF
Switch Time (Ton, Toff) (Max): 48ns, 33ns
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: -2.46pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 180MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
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DG2019DN-T1-E4 DG2019DN-T1-E4 Vishay Siliconix 72342.pdf Description: IC SWITCH DUAL SPDT 16QFN
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DG201BDJ-E3 DG201BDJ-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NCX4 85OHM 16DIP
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
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DG201BDQ-E3 DG201BDQ-E3 Vishay Siliconix Description: IC SW SPST-NCX4 85OHM 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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DG201HSDJ-E3 DG201HSDJ-E3 Vishay Siliconix dg201hs.pdf Description: IC SWITCH SPST-NCX4 50OHM 16DIP
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±7V ~ 22V
Voltage - Supply, Single (V+): 13V ~ 36V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
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DG201HSDQ-E3 Vishay Siliconix dg201hs.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG201HSDQ-T1-E3 DG201HSDQ-T1-E3 Vishay Siliconix dg201hs.pdf Description: IC SW SPST-NCX4 50OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -5pC
Crosstalk: -100dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG201HSDY-E3 DG201HSDY-E3 Vishay Siliconix dg201hs.pdf Description: IC SWITCH SPST-NCX4 50OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -5pC
Crosstalk: -100dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG201HSDY-T1-E3 DG201HSDY-T1-E3 Vishay Siliconix dg201hs.pdf Description: IC SWITCH SPST-NCX4 50OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -5pC
Crosstalk: -100dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG2020DV-T1-E3 DG2020DV-T1-E3 Vishay Siliconix 71676.pdf Description: IC SWITCH SPDT X 1 1.6OHM 6TSOP
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 5.3nA
Channel Capacitance (CS(off), CD(off)): 65pF
Switch Time (Ton, Toff) (Max): 6µs, 4µs
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 6-TSOP
On-State Resistance (Max): 1.6Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG2026DQ-T1-E3 DG2026DQ-T1-E3 Vishay Siliconix Description: IC SWITCH SPDT X 2 4OHM 10MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF
Switch Time (Ton, Toff) (Max): 48ns, 33ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -82dB @ 1MHz
Charge Injection: 79pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 4Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG202BDJ-E3 DG202BDJ-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NOX4 85OHM 16DIP
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG202BDQ-E3 DG202BDQ-E3 Vishay Siliconix dg201b.pdf Description: IC SW SPST-NOX4 85OHM 16TSSOP
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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DG202BDQ-T1-E3 DG202BDQ-T1-E3 Vishay Siliconix dg201b.pdf Description: IC SW SPST-NOX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
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DG202BDY-E3 DG202BDY-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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DG202BDY-T1-E3 DG202BDY-T1-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DG2031DQ-T1-E3 DG2031DQ-T1-E3 Vishay Siliconix 71966.pdf Description: IC SWITCH SPDTX2 750MOHM 10MSOP
Number of Circuits: 2
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 750mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 117pF
Switch Time (Ton, Toff) (Max): 58ns, 49ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -71dB @ 1MHz
Charge Injection: 4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Produkt ist nicht verfügbar
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DG2032DN-T1-E4 Vishay Siliconix 72387.pdf Description: IC SWITCH DUAL CMOS 12QFN
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DG2034DN-T1-E4 DG2034DN-T1-E4 Vishay Siliconix dg2034e.pdf Description: IC SWITCH SP4T X 1 5.5OHM 12QFN
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Switch Time (Ton, Toff) (Max): 30ns, 20ns
Channel-to-Channel Matching (ΔRon): 160mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -77dB @ 1MHz
Charge Injection: -4.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
On-State Resistance (Max): 5.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG2034DQ-T1-E3 DG2034DQ-T1-E3 Vishay Siliconix dg2034e.pdf Description: IC SWITCH SP4T X 1 5.5OHM 10MSOP
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Switch Time (Ton, Toff) (Max): 30ns, 20ns
Channel-to-Channel Matching (ΔRon): 160mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -77dB @ 1MHz
Charge Injection: -4.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 5.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG2035DQ-T1-E3 DG2035DQ-T1-E3 Vishay Siliconix 72701.pdf Description: IC SWITCH DUAL SPDT 10MSOP
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SI7703EDN-T1-GE3 si7703edn.pdf
SI7703EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 1212-8 PPAK
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SI7774DP-T1-GE3 si7774dp.pdf
SI7774DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
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SI7911DN-T1-GE3 72340.pdf
SI7911DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.2A 1212-8
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SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
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SI7946DP-T1-GE3 72282.pdf
SI7946DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
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SI7949DP-T1-GE3 73130.pdf
SI7949DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
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Si8451DB-T2-E1 SI8451DB.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.8A MICROFOOT
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SI8467DB-T2-E1 si8467db.pdf
SI8467DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
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SI8475EDB-T1-E1 si8475edb.pdf
SI8475EDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
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SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
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SIA778DJ-T1-GE3 sia778dj.pdf
SIA778DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V/20V SC70-6
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SIB488DK-T1-GE3 sib488dk.pdf
SIB488DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 9A SC75-6
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SIE832DF-T1-GE3 sie832df.pdf
SIE832DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A 10-POLARPAK
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SIE836DF-T1-GE3 sie836df.pdf
SIE836DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.3A POLARPAK
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SIE854DF-T1-GE3 sie854df.pdf
SIE854DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A POLARPAK
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SIE860DF-T1-GE3 sie860df.pdf
SIE860DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
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SIE864DF-T1-GE3 SIE864DF.pdf
SIE864DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45A POLARPAK
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SIE868DF-T1-GE3 sie868df.pdf
SIE868DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A POLARPAK
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SIJ420DP-T1-GE3 sij420dp.pdf
SIJ420DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
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SIR838DP-T1-GE3 sir838dp.pdf
SIR838DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 35A PPAK SO-8
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SIR844DP-T1-GE3 sir844dp.pdf
SIR844DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
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SIR862DP-T1-GE3 sir862dp.pdf
SIR862DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
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SI1072X-T1-GE3 si1072x.pdf
SI1072X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1033X-T1-GE3 71428.pdf
SI1033X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.145A SC89
Produkt ist nicht verfügbar
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SI1058X-T1-GE3
SI1058X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N7002K-T1-GE3 2n7002k.pdf
2N7002K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 300MA TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
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3000+0.12 EUR
9000+0.1 EUR
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2N7002-T1-E3 70226.pdf
2N7002-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Produkt ist nicht verfügbar
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2N7002-T1-GE3 70226.pdf
2N7002-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
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DG2001DV-T1-E3 DG2001.pdf
DG2001DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 7OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -70dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel Capacitance (CS(off), CD(off)): 17pF
Current - Leakage (IS(off)) (Max): 900pA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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DG2002DL-T1-E3
DG2002DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 7.8OHM SC70-6
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 8ns, 6ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -69dB @ 1MHz
Charge Injection: 5pC
Supplier Device Package: SC-70-6
On-State Resistance (Max): 7.8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Produkt ist nicht verfügbar
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DG2003DQ-T1-E3 71754.pdf
DG2003DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX2 2.5OHM 10MSOP
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -67dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 51pF
Switch Time (Ton, Toff) (Max): 28ns, 22ns
Produkt ist nicht verfügbar
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DG2004DQ-T1-E3 71754.pdf
DG2004DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH 2 X SPST 2.5 OHM 8MSOP
Produkt ist nicht verfügbar
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DG2005DQ-T1-E3 71754.pdf
DG2005DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH 2 X SPST 2.5 OHM 8MSOP
Produkt ist nicht verfügbar
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DG200BDJ-E3 dg200b.pdf
DG200BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14DIP
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DG2011DXA-T1-E3 dg2011.pdf
DG2011DXA-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT SC89-6
Produkt ist nicht verfügbar
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DG2012DL-T1-E3
DG2012DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.8OHM SC70-6
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 20pF
Switch Time (Ton, Toff) (Max): 38ns, 32ns
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -64dB @ 1MHz
Charge Injection: 20pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: SC-70-6
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG2015DN-T1-E4 71971.pdf
DG2015DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPDT 16QFN
Produkt ist nicht verfügbar
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DG2016DQ-T1-E3 dg2016.pdf
DG2016DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10MSOP
Produkt ist nicht verfügbar
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DG2017DN-T1-E4 dg2017.pdf
DG2017DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT X 2 3.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3.7Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 2pC
Crosstalk: -69dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 300mOhm (Max)
Switch Time (Ton, Toff) (Max): 85ns, 35ns
Channel Capacitance (CS(off), CD(off)): 43pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
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DG2018DN-T1-E4 72342.pdf
DG2018DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT X 2 8OHM 16QFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 7.5pF
Switch Time (Ton, Toff) (Max): 48ns, 33ns
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: -2.46pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 180MHz
On-State Resistance (Max): 8Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
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DG2019DN-T1-E4 72342.pdf
DG2019DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 16QFN
Produkt ist nicht verfügbar
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DG201BDJ-E3 dg201b.pdf
DG201BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 85OHM 16DIP
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
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DG201BDQ-E3
DG201BDQ-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 85OHM 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG201HSDJ-E3 dg201hs.pdf
DG201HSDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 50OHM 16DIP
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±7V ~ 22V
Voltage - Supply, Single (V+): 13V ~ 36V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
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DG201HSDQ-E3 dg201hs.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
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DG201HSDQ-T1-E3 dg201hs.pdf
DG201HSDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 50OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -5pC
Crosstalk: -100dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG201HSDY-E3 dg201hs.pdf
DG201HSDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 50OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -5pC
Crosstalk: -100dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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3+10.03 EUR
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50+6.72 EUR
100+6.44 EUR
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DG201HSDY-T1-E3 dg201hs.pdf
DG201HSDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 50OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -5pC
Crosstalk: -100dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG2020DV-T1-E3 71676.pdf
DG2020DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.6OHM 6TSOP
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 5.3nA
Channel Capacitance (CS(off), CD(off)): 65pF
Switch Time (Ton, Toff) (Max): 6µs, 4µs
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 6-TSOP
On-State Resistance (Max): 1.6Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG2026DQ-T1-E3
DG2026DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 4OHM 10MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF
Switch Time (Ton, Toff) (Max): 48ns, 33ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -82dB @ 1MHz
Charge Injection: 79pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 4Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG202BDJ-E3 dg201b.pdf
DG202BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16DIP
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG202BDQ-E3 dg201b.pdf
DG202BDQ-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 85OHM 16TSSOP
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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DG202BDQ-T1-E3 dg201b.pdf
DG202BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG202BDY-E3 dg201b.pdf
DG202BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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4+5.51 EUR
10+4.12 EUR
25+3.77 EUR
100+3.39 EUR
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DG202BDY-T1-E3 dg201b.pdf
DG202BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+2.55 EUR
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DG2031DQ-T1-E3 71966.pdf
DG2031DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX2 750MOHM 10MSOP
Number of Circuits: 2
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 750mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 117pF
Switch Time (Ton, Toff) (Max): 58ns, 49ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -71dB @ 1MHz
Charge Injection: 4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
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DG2032DN-T1-E4 72387.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL CMOS 12QFN
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DG2034DN-T1-E4 dg2034e.pdf
DG2034DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 1 5.5OHM 12QFN
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Switch Time (Ton, Toff) (Max): 30ns, 20ns
Channel-to-Channel Matching (ΔRon): 160mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -77dB @ 1MHz
Charge Injection: -4.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
On-State Resistance (Max): 5.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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DG2034DQ-T1-E3 dg2034e.pdf
DG2034DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 1 5.5OHM 10MSOP
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Switch Time (Ton, Toff) (Max): 30ns, 20ns
Channel-to-Channel Matching (ΔRon): 160mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -77dB @ 1MHz
Charge Injection: -4.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 5.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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DG2035DQ-T1-E3 72701.pdf
DG2035DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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