Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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IRFP254 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 23A TO247-3 Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Power Dissipation (Max): 190W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10030 Stücke - Preis und Lieferfrist anzeigen
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IRFPF30 |
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Vishay Siliconix |
Description: MOSFET N-CH 900V 3.6A TO-247AC Part Status: Obsolete Supplier Device Package: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 125W (Tc) Packaging: Tube Package / Case: TO-247-3 Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drain to Source Voltage (Vdss): 900V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15625 Stücke - Preis und Lieferfrist anzeigen
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IRFPG30 |
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Vishay Siliconix |
Description: MOSFET N-CH 1000V 3.1A TO247-3 Supplier Device Package: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Package / Case: TO-247-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7927 Stücke - Preis und Lieferfrist anzeigen
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| SYB85N10-10 | Vishay Siliconix | Description: MOSFET N-CH D-S 100V TO263 | Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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IRFB17N50L |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
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IRFP340 |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 11A TO247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1224 Stücke - Preis und Lieferfrist anzeigen
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SIHS36N50D-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 36A SUPER-247 Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Package / Case: TO-247-3 Base Part Number: SIHS36 Supplier Device Package: SUPER-247™ (TO-274AA) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Power Dissipation (Max): 446W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
auf Bestellung 103 Stücke Lieferzeit 21-28 Tag (e) |
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IRFP244 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 15A TO247-3 Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Package / Case: TO-247-3 Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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IRFP23N50LPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 23A TO247-3 Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 508 Stücke - Preis und Lieferfrist anzeigen
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IRFPE30 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A TO-247AC Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFP448 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO247-3 Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10030 Stücke - Preis und Lieferfrist anzeigen
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IRFPG40 |
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Vishay Siliconix |
Description: MOSFET N-CH 1000V 4.3A TO247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
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IRFP350 |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 16A TO247-3 Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 108 Stücke - Preis und Lieferfrist anzeigen
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IRFPE40 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 5.4A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
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IRFB18N50K |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 17A TO220AB Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 220W (Tc) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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IRFPC50 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 11A TO247-3 Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
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IRFPC50A |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 11A TO247-3 Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Package / Case: TO-247-3 Packaging: Tube Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 95725 Stücke - Preis und Lieferfrist anzeigen
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SIHG73N60E-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 73A TO247AC Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFPC50LC |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 11A TO247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFP350LC |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 16A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFPE50 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 7.8A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
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IRFPF50 |
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Vishay Siliconix |
Description: MOSFET N-CH 900V 6.7A TO-247AC Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
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IRFP17N50L |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 16A TO247-3 Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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IRFP054 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 70A TO247-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 54A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14230 Stücke - Preis und Lieferfrist anzeigen
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IRFP264 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 38A TO247-3 Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Packaging: Tube Package / Case: TO-247-3 Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22 Stücke - Preis und Lieferfrist anzeigen
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IRFP21N60L |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO247-3 Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 608 Stücke - Preis und Lieferfrist anzeigen
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IRFP23N50L |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 23A TO247-3 Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 370W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 32850 Stücke - Preis und Lieferfrist anzeigen
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IRFPS38N60LPBF | Vishay Siliconix |
Description: MOSFET N-CH 600V 38A SUPER247 Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 540W (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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IRFP22N60K |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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IRFPG50 |
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Vishay Siliconix |
Description: MOSFET N-CH 1000V 6.1A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFPC60 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 280W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 47829 Stücke - Preis und Lieferfrist anzeigen
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IRFPC60LC |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 16A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Packaging: Tube Package / Case: TO-247-3 Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
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IRFP27N60K |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 27A TO247-3 Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 500W (Tc) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5400 Stücke - Preis und Lieferfrist anzeigen
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IRFP26N60L |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 26A TO247-3 Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 470W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6800 Stücke - Preis und Lieferfrist anzeigen
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IRFP31N50L |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 31A TO247-3 Package / Case: TO-247-3 Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Packaging: Tube Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10720 Stücke - Preis und Lieferfrist anzeigen
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IRFPS37N50A |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 36A SUPER247 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Packaging: Tube Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SUPER-247™ (TO-274AA) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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3N163 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Packaging: Tube Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 375mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 5V @ 10µA Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21738 Stücke - Preis und Lieferfrist anzeigen
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3N163-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 375mW (Ta) FET Type: P-Channel Part Status: Obsolete Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 5V @ 10µA Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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3N164 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 50MA TO72 Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V Vgs(th) (Max) @ Id: 5V @ 10µA Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Power Dissipation (Max): 375mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can Base Part Number: 3N164 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17087 Stücke - Preis und Lieferfrist anzeigen
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IRFPS40N50L | Vishay Siliconix |
Description: MOSFET N-CH 500V 46A SUPER247 Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SUPER-247™ (TO-274AA) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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2N6660 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Manufacturer: Vishay Siliconix Supplier Device Package: TO-205AD (TO-39) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Base Part Number: 2N6660 Package / Case: TO-205AD, TO-39-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6016 Stücke - Preis und Lieferfrist anzeigen
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2N6660-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Vishay Siliconix Base Part Number: 2N6660 Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFPS43N50K | Vishay Siliconix |
Description: MOSFET N-CH 500V 47A SUPER247 Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SUPER-247™ (TO-274AA) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 147 Stücke - Preis und Lieferfrist anzeigen
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| IRFPS38N60L | Vishay Siliconix |
Description: MOSFET N-CH 600V 38A SUPER247 Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 540W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 600V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1701 Stücke - Preis und Lieferfrist anzeigen
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| IRFPS40N60K | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A SUPER247 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SUPER-247™ (TO-274AA) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Packaging: Tube Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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2N6661 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Base Part Number: 2N6661 Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drain to Source Voltage (Vdss): 90V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2416 Stücke - Preis und Lieferfrist anzeigen
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2N6661-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Manufacturer: Vishay Siliconix Supplier Device Package: TO-39 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drain to Source Voltage (Vdss): 90V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Base Part Number: 2N6661 Package / Case: TO-205AD, TO-39-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| VQ1001P |
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Vishay Siliconix |
Description: MOSFET 4N-CH 30V 0.83A 14DIP Current - Continuous Drain (Id) @ 25°C: 830mA Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 4 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2661 Stücke - Preis und Lieferfrist anzeigen
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| VQ1001P-E3 |
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Vishay Siliconix |
Description: MOSFET 4N-CH 30V 0.83A 14DIP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Current - Continuous Drain (Id) @ 25°C: 830mA Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 4 N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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3N163-2 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 375mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Type: P-Channel Part Status: Obsolete Packaging: Tube Vgs(th) (Max) @ Id: 5V @ 10µA Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| VP0300B-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 0.32A TO-205 Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Base Part Number: VP0300 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| VP0808B |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 0.88A TO-205 Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drain to Source Voltage (Vdss): 80V Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.25W Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs(th) (Max) @ Id: 4.5V @ 1mA FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4547 Stücke - Preis und Lieferfrist anzeigen
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| VP0808B-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 0.88A TO-205 Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drain to Source Voltage (Vdss): 80V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.25W Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs(th) (Max) @ Id: 4.5V @ 1mA Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1440 Stücke - Preis und Lieferfrist anzeigen
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| VP1008B |
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Vishay Siliconix |
Description: MOSFET P-CH 100V .79A TO-205 Drain to Source Voltage (Vdss): 100V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.25W Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs(th) (Max) @ Id: 4.5V @ 1mA Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 790mA (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12162 Stücke - Preis und Lieferfrist anzeigen
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2N6660-2 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Base Part Number: 2N6660 Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| VQ1004P | Vishay Siliconix |
Description: MOSFET N-CH 60V 0.4A TO-205 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5102 Stücke - Preis und Lieferfrist anzeigen
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| VQ1004P-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 0.4A TO-205 | Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| VQ1001P-2 |
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Vishay Siliconix |
Description: MOSFET 4N-CH 30V 0.83A 14DIP FET Type: 4 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Current - Continuous Drain (Id) @ 25°C: 830mA Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
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| VQ1004P-2 | Vishay Siliconix | Description: MOSFET N-CH 60V 0.4A TO-205 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 102 Stücke - Preis und Lieferfrist anzeigen
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2N6661-2 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Base Part Number: 2N6661 Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Part Status: Obsolete Packaging: Tube Vgs (Max): ±20V Manufacturer: Vishay Siliconix Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drain to Source Voltage (Vdss): 90V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| VP0808B-2 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 0.88A TO-205 FET Type: MOSFET P-Channel, Metal Oxide Vgs(th) (Max) @ Id: 4.5V @ 1mA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drain to Source Voltage (Vdss): 80V Power - Max: 6.25W Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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2N6660JTX02 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Supplier Device Package: TO-205AD (TO-39) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6660JTVP02 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) Part Status: Obsolete FET Type: N-Channel Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: 2N6660 Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6660JTXL02 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Base Part Number: 2N6660 Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39) Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6660JTXP02 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: 2N6660 Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6660JTXV02 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Base Part Number: 2N6660 Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drain to Source Voltage (Vdss): 60V Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6661JAN02 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Base Part Number: 2N6661 Drain to Source Voltage (Vdss): 90V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6661JTX02 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Packaging: Tube FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6661JTXL02 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Base Part Number: 2N6661 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6661JTXP02 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Base Part Number: 2N6661 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6661JTXV02 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can Base Part Number: 2N6661 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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2N6661JTVP02 |
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Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Base Part Number: 2N6661 Package / Case: TO-205AD, TO-39-3 Metal Can Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drain to Source Voltage (Vdss): 90V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Manufacturer: Vishay Siliconix Supplier Device Package: TO-39 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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DG408LEDQ-T1-GE3 |
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Vishay Siliconix |
Description: IC MUX CMOS SINGLE 8CH 16TSSOP Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: DG408 Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -98dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF Charge Injection: -11pC Switch Time (Ton, Toff) (Max): 72ns, 47ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Channel-to-Channel Matching (ΔRon): 1Ohm On-State Resistance (Max): 23Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 8:1 |
auf Bestellung 89 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11890 Stücke - Preis und Lieferfrist anzeigen
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DG408LEDN-T1-GE4 |
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Vishay Siliconix |
Description: IC MUX CMOS SINGLE 8CH 16-QFN Switch Time (Ton, Toff) (Max): 72ns, 47ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Channel-to-Channel Matching (ΔRon): 1Ohm On-State Resistance (Max): 23Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 8:1 Base Part Number: DG408 Supplier Device Package: 16-QFN (3x3) Package / Case: 16-VFQFN Exposed Pad Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -98dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF Charge Injection: 11pC |
auf Bestellung 2145 Stücke Lieferzeit 21-28 Tag (e) |
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DG408DQ-T1-E3 |
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Vishay Siliconix |
Description: IC MULTIPLEXER 8X1 16TSSOP Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 3pF, 26pF Charge Injection: 20pC Switch Time (Ton, Toff) (Max): 150ns, 150ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 15Ohm (Max) On-State Resistance (Max): 100Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 8:1 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: DG408 Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) |
auf Bestellung 42559 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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DG408LEDY-T1-GE3 |
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Vishay Siliconix |
Description: IC MUX CMOS SINGLE 8CH 16-SOIC Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -98dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF Charge Injection: -11pC Switch Time (Ton, Toff) (Max): 72ns, 47ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Channel-to-Channel Matching (ΔRon): 1Ohm On-State Resistance (Max): 23Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 8:1 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC Base Part Number: DG408 |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 17939 Stücke - Preis und Lieferfrist anzeigen
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SI2365EDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5.9A TO-236 Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Base Part Number: SI2365 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 1W (Ta), 1.7W (Tc) |
auf Bestellung 83843 Stücke Lieferzeit 21-28 Tag (e) |
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SIR878BDP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 12A/42.5A PPAK Base Part Number: SIR878 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 2212 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 12A/42.5A PPAK Operating Temperature: -55°C ~ 150°C (TJ) Base Part Number: SIR878 Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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DG612EEY-T1-GE4 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 16SOIC Voltage - Supply, Dual (V±): ±3V ~ 5V Voltage - Supply, Single (V+): 3V ~ 12V Supplier Device Package: 16-SOIC -3db Bandwidth: 1GHz On-State Resistance (Max): 115Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 100pA Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Channel Capacitance (CS(off), CD(off)): 3pF, 3pF Switch Time (Ton, Toff) (Max): 50ns, 35ns Charge Injection: 1.4pC Crosstalk: -74dB @ 10MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 2.5Ohm |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4056DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 11.1A 8SOIC Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4056 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V Vgs (Max): ±20V |
auf Bestellung 6903 Stücke Lieferzeit 21-28 Tag (e) |
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SI1922EDH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.3A SOT-363 FET Type: 2 N-Channel (Dual) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI1922 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate Part Status: Active |
auf Bestellung 64022 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 119374 Stücke - Preis und Lieferfrist anzeigen
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SIA456DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A SC70-6 Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIA456 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 100V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA |
auf Bestellung 37158 Stücke Lieferzeit 21-28 Tag (e) |
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SI1317DL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 1.4A SC70 Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 500mW (Tc) Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Mounting Type: Surface Mount |
auf Bestellung 2729 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12411 Stücke - Preis und Lieferfrist anzeigen
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IRFR014 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFP9140 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 21A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFR9120 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 5.6A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1569 Stücke - Preis und Lieferfrist anzeigen
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IRFR110 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 190 Stücke - Preis und Lieferfrist anzeigen
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IRFR210TR |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9414 Stücke - Preis und Lieferfrist anzeigen
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IRF614S |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 2.7A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
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IRF624S |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 4.4A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9030 Stücke - Preis und Lieferfrist anzeigen
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IRF634S | Vishay Siliconix |
Description: MOSFET N-CH 250V 8.1A D2PAK Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
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IRF644S | Vishay Siliconix |
Description: MOSFET N-CH 250V 14A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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IRF710S | Vishay Siliconix |
Description: MOSFET N-CH 400V 2A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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IRF720S |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 3.3A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9030 Stücke - Preis und Lieferfrist anzeigen
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IRF730S |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A D2PAK Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 74W (Tc) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9030 Stücke - Preis und Lieferfrist anzeigen
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| IRFP254 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 23A TO247-3
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 23A TO247-3
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
auf Bestellung 10030 Stücke - Preis und Lieferfrist anzeigen
| IRFPF30 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO-247AC
Part Status: Obsolete
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Packaging: Tube
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 3.6A TO-247AC
Part Status: Obsolete
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Packaging: Tube
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 15625 Stücke - Preis und Lieferfrist anzeigen
| IRFPG30 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 3.1A TO247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3
auf Bestellung 7927 Stücke - Preis und Lieferfrist anzeigen
| SYB85N10-10 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO263
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH D-S 100V TO263
| IRFB17N50L |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
| IRFP340 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 11A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 11A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 1224 Stücke - Preis und Lieferfrist anzeigen
| SIHS36N50D-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 36A SUPER-247
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Base Part Number: SIHS36
Supplier Device Package: SUPER-247™ (TO-274AA)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Power Dissipation (Max): 446W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
auf Bestellung 103 Stücke Description: MOSFET N-CH 500V 36A SUPER-247
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Base Part Number: SIHS36
Supplier Device Package: SUPER-247™ (TO-274AA)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Power Dissipation (Max): 446W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Lieferzeit 21-28 Tag (e)
| IRFP244 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 15A TO247-3
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Package / Case: TO-247-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 15A TO247-3
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Package / Case: TO-247-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| IRFP23N50LPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 23A TO247-3
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 23A TO247-3
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 508 Stücke - Preis und Lieferfrist anzeigen
| IRFPE30 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A TO-247AC
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 4.1A TO-247AC
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| IRFP448 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 11A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 10030 Stücke - Preis und Lieferfrist anzeigen
| IRFPG40 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 4.3A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 4.3A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
| IRFP350 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 16A TO247-3
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 16A TO247-3
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 108 Stücke - Preis und Lieferfrist anzeigen
| IRFPE40 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 5.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
| IRFB18N50K |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220W (Tc)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 17A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 220W (Tc)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
| IRFPC50 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO247-3
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 11A TO247-3
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
| IRFPC50A |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO247-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 11A TO247-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 95725 Stücke - Preis und Lieferfrist anzeigen
| SIHG73N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 73A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 73A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
| IRFPC50LC |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 11A TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| IRFP350LC |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
| IRFPE50 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 7.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
| IRFPF50 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 6.7A TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 6.7A TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
| IRFP17N50L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 16A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| IRFP054 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 70A TO247-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 54A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 70A TO247-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 54A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 14230 Stücke - Preis und Lieferfrist anzeigen
| IRFP264 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 38A TO247-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Packaging: Tube
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 38A TO247-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Packaging: Tube
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 22 Stücke - Preis und Lieferfrist anzeigen
| IRFP21N60L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 21A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 608 Stücke - Preis und Lieferfrist anzeigen
| IRFP23N50L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 23A TO247-3
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 23A TO247-3
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
auf Bestellung 32850 Stücke - Preis und Lieferfrist anzeigen
| IRFPS38N60LPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 38A SUPER247
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 38A SUPER247
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| IRFP22N60K |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 22A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| IRFPG50 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 6.1A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 6.1A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| IRFPC60 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 47829 Stücke - Preis und Lieferfrist anzeigen
| IRFPC60LC | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Packaging: Tube
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Packaging: Tube
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
| IRFP27N60K |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 27A TO247-3
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 27A TO247-3
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Packaging: Tube
auf Bestellung 5400 Stücke - Preis und Lieferfrist anzeigen
| IRFP26N60L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 26A TO247-3
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 470W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 26A TO247-3
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 470W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 6800 Stücke - Preis und Lieferfrist anzeigen
| IRFP31N50L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 31A TO247-3
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Packaging: Tube
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 31A TO247-3
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Packaging: Tube
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 10720 Stücke - Preis und Lieferfrist anzeigen
| IRFPS37N50A | |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 36A SUPER247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 36A SUPER247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
| 3N163 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 375mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 10µA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 375mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 10µA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
auf Bestellung 21738 Stücke - Preis und Lieferfrist anzeigen
| 3N163-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 375mW (Ta)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 10µA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 50MA TO72
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 375mW (Ta)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 10µA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
| 3N164 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50MA TO72
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id: 5V @ 10µA
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Power Dissipation (Max): 375mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-72
Package / Case: TO-206AF, TO-72-4 Metal Can
Base Part Number: 3N164
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 50MA TO72
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id: 5V @ 10µA
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Power Dissipation (Max): 375mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-72
Package / Case: TO-206AF, TO-72-4 Metal Can
Base Part Number: 3N164
auf Bestellung 17087 Stücke - Preis und Lieferfrist anzeigen
| IRFPS40N50L |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 46A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 46A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
| 2N6660 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-205AD (TO-39)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-205AD (TO-39)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
auf Bestellung 6016 Stücke - Preis und Lieferfrist anzeigen
| 2N6660-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Vishay Siliconix
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Vishay Siliconix
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
| IRFPS43N50K |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 47A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 47A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
auf Bestellung 147 Stücke - Preis und Lieferfrist anzeigen
| IRFPS38N60L |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 38A SUPER247
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 38A SUPER247
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 1701 Stücke - Preis und Lieferfrist anzeigen
| IRFPS40N60K |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A SUPER247
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 40A SUPER247
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
| 2N6661 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
auf Bestellung 2416 Stücke - Preis und Lieferfrist anzeigen
| 2N6661-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
| VQ1001P |
|
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 30V 0.83A 14DIP
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
auf Bestellung 2661 Stücke - Preis und Lieferfrist anzeigen
| VQ1001P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 30V 0.83A 14DIP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
| 3N163-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 375mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Vgs (Max): ±30V
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 10µA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 50MA TO72
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 375mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Vgs (Max): ±30V
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 10µA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
| VP0300B-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.32A TO-205
Packaging: Tube
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Base Part Number: VP0300
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 0.32A TO-205
Packaging: Tube
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Base Part Number: VP0300
| VP0808B |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 80V 0.88A TO-205
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 4547 Stücke - Preis und Lieferfrist anzeigen
| VP0808B-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Drain to Source Voltage (Vdss): 80V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 80V 0.88A TO-205
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Drain to Source Voltage (Vdss): 80V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
auf Bestellung 1440 Stücke - Preis und Lieferfrist anzeigen
| VP1008B |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V .79A TO-205
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V .79A TO-205
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Ta)
auf Bestellung 12162 Stücke - Preis und Lieferfrist anzeigen
| 2N6660-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Base Part Number: 2N6660
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Base Part Number: 2N6660
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
| VQ1004P |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 0.4A TO-205
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
auf Bestellung 5102 Stücke - Preis und Lieferfrist anzeigen
| VQ1004P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 0.4A TO-205
| VQ1001P-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
FET Type: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 30V 0.83A 14DIP
FET Type: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 830mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
| VQ1004P-2 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 0.4A TO-205
auf Bestellung 102 Stücke - Preis und Lieferfrist anzeigen
| 2N6661-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Part Status: Obsolete
Packaging: Tube
Vgs (Max): ±20V
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Part Status: Obsolete
Packaging: Tube
Vgs (Max): ±20V
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
| VP0808B-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 80V 0.88A TO-205
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
| 2N6660JTX02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
| 2N6660JTVP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
| 2N6660JTXL02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N6660JTXP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: 2N6660
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
| 2N6660JTXV02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Base Part Number: 2N6660
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 990MA TO205AD
Base Part Number: 2N6660
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
| 2N6661JAN02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Base Part Number: 2N6661
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Base Part Number: 2N6661
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
| 2N6661JTX02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
| 2N6661JTXL02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Part Number: 2N6661
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Part Number: 2N6661
| 2N6661JTXP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Part Number: 2N6661
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Part Number: 2N6661
| 2N6661JTXV02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Part Number: 2N6661
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Part Number: 2N6661
| 2N6661JTVP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 90V 860MA TO39
Base Part Number: 2N6661
Package / Case: TO-205AD, TO-39-3 Metal Can
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Drain to Source Voltage (Vdss): 90V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-39
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA
| DG408LEDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS SINGLE 8CH 16TSSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG408
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -98dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Charge Injection: -11pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
auf Bestellung 89 Stücke Description: IC MUX CMOS SINGLE 8CH 16TSSOP
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG408
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -98dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Charge Injection: -11pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Lieferzeit 21-28 Tag (e)
auf Bestellung 11890 Stücke - Preis und Lieferfrist anzeigen
| DG408LEDN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS SINGLE 8CH 16-QFN
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Base Part Number: DG408
Supplier Device Package: 16-QFN (3x3)
Package / Case: 16-VFQFN Exposed Pad
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -98dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Charge Injection: 11pC
auf Bestellung 2145 Stücke Description: IC MUX CMOS SINGLE 8CH 16-QFN
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Base Part Number: DG408
Supplier Device Package: 16-QFN (3x3)
Package / Case: 16-VFQFN Exposed Pad
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -98dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Charge Injection: 11pC
Lieferzeit 21-28 Tag (e)
| DG408DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 8X1 16TSSOP
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Charge Injection: 20pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG408
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 42559 Stücke Description: IC MULTIPLEXER 8X1 16TSSOP
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Charge Injection: 20pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG408
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| DG408LEDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS SINGLE 8CH 16-SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -98dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Charge Injection: -11pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG408
auf Bestellung 2 Stücke Description: IC MUX CMOS SINGLE 8CH 16-SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -98dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Charge Injection: -11pC
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 23Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG408
Lieferzeit 21-28 Tag (e)
auf Bestellung 17939 Stücke - Preis und Lieferfrist anzeigen
| SI2365EDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO-236
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Base Part Number: SI2365
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
auf Bestellung 83843 Stücke Description: MOSFET P-CH 20V 5.9A TO-236
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Base Part Number: SI2365
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Lieferzeit 21-28 Tag (e)
| SIR878BDP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Base Part Number: SIR878
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2212 Stücke Description: MOSFET N-CH 100V 12A/42.5A PPAK
Base Part Number: SIR878
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIR878BDP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Base Part Number: SIR878
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke Description: MOSFET N-CH 100V 12A/42.5A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Base Part Number: SIR878
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 2212 Stücke - Preis und Lieferfrist anzeigen
| DG612EEY-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16SOIC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH 16SOIC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Charge Injection: 1.4pC
Crosstalk: -74dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2.5Ohm
| SI4056DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.1A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4056
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Vgs (Max): ±20V
auf Bestellung 6903 Stücke Description: MOSFET N-CH 100V 11.1A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4056
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
| SI1922EDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
FET Type: 2 N-Channel (Dual)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1922
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Part Status: Active
auf Bestellung 64022 Stücke Description: MOSFET 2N-CH 20V 1.3A SOT-363
FET Type: 2 N-Channel (Dual)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1922
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 119374 Stücke - Preis und Lieferfrist anzeigen
| SIA456DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A SC70-6
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA456
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 100V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
auf Bestellung 37158 Stücke Description: MOSFET N-CH 200V 2.6A SC70-6
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA456
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 100V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Lieferzeit 21-28 Tag (e)
| SI1317DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
auf Bestellung 2729 Stücke Description: MOSFET P-CH 20V 1.4A SC70
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 12411 Stücke - Preis und Lieferfrist anzeigen
| IRFR014 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| IRFP9140 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 21A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 21A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| IRFR9120 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 5.6A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1569 Stücke - Preis und Lieferfrist anzeigen
| IRFR110 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 4.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 190 Stücke - Preis und Lieferfrist anzeigen
| IRFR210TR |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 2.6A DPAK
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
auf Bestellung 9414 Stücke - Preis und Lieferfrist anzeigen
| IRF614S |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.7A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 2.7A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
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| IRF624S |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 4.4A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 4.4A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
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| IRF634S |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A D2PAK
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 8.1A D2PAK
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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| IRF644S |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 14A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
| IRF710S |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| IRF720S |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 3.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
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| IRF730S |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 5.5A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 9030 Stücke - Preis und Lieferfrist anzeigen
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