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IRFR9310TRRPBF IRFR9310TRRPBF Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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IRFZ14STRLPBF IRFZ14STRLPBF Vishay Siliconix sihfz14s.pdf Description: MOSFET N-CH 60V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ24SPBF IRFZ24SPBF Vishay Siliconix sihfz24s.pdf Description: MOSFET N-CH 60V 17A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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IRFZ24STRRPBF IRFZ24STRRPBF Vishay Siliconix doc?98239 Description: MOSFET N-CH 60V 17A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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IRFZ34STRLPBF IRFZ34STRLPBF Vishay Siliconix sihfz34s.pdf Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFZ44SPBF IRFZ44SPBF Vishay Siliconix sihfz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFZ44STRLPBF IRFZ44STRLPBF Vishay Siliconix sihfz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFZ44STRRPBF IRFZ44STRRPBF Vishay Siliconix sihfz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRL510SPBF IRL510SPBF Vishay Siliconix sihf510s.pdf Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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IRL510STRLPBF IRL510STRLPBF Vishay Siliconix sihf510s.pdf Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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IRL620STRLPBF IRL620STRLPBF Vishay Siliconix sihl620s.pdf Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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IRL640STRLPBF IRL640STRLPBF Vishay Siliconix sihl640s.pdf Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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IRLI540GPBF IRLI540GPBF Vishay Siliconix 90399.pdf Description: MOSFET N-CH 100V 17A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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IRLR014TRLPBF IRLR014TRLPBF Vishay Siliconix sihlr014.pdf Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IRLR024TRLPBF IRLR024TRLPBF Vishay Siliconix sihlr024.pdf Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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IRLR120TRRPBF IRLR120TRRPBF Vishay Siliconix IRLR%28U%29120%2C%20SiHLR%28U%29120.pdf Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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IRLZ24SPBF IRLZ24SPBF Vishay Siliconix IRLZ24S%28L%29%2CSiHLZ24S%28L%29.pdf Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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IRLZ34SPBF IRLZ34SPBF Vishay Siliconix sihlz34.pdf Description: MOSFET N-CH 60V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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SI1031X-T1-E3 SI1031X-T1-E3 Vishay Siliconix si1031r.pdf Description: MOSFET P-CH 20V 0.155A SC-75A
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SI1031X-T1-GE3 SI1031X-T1-GE3 Vishay Siliconix si1031r.pdf Description: MOSFET P-CH 20V 0.155A SC-75A
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SI1037X-T1-E3 SI1037X-T1-E3 Vishay Siliconix 70686.pdf Description: MOSFET P-CH 20V 0.77A SC89
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SI1037X-T1-GE3 SI1037X-T1-GE3 Vishay Siliconix 70686.pdf Description: MOSFET P-CH 20V 0.77A SC89
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SI1046R-T1-E3 SI1046R-T1-E3 Vishay Siliconix si1046r.pdf Description: MOSFET N-CH 20V 0.606A SC75-3
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SI1051X-T1-E3 SI1051X-T1-E3 Vishay Siliconix si1051x.pdf Description: MOSFET P-CH 8V 1.2A SC89-6
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SI1054X-T1-E3 SI1054X-T1-E3 Vishay Siliconix si1054x.pdf Description: MOSFET N-CH 12V 1.32A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 8.57 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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SI1069X-T1-E3 SI1069X-T1-E3 Vishay Siliconix si1069x.pdf Description: MOSFET P-CH 20V 0.94A SC89-6
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SI1073X-T1-E3 SI1073X-T1-E3 Vishay Siliconix si1073x.pdf Description: MOSFET P-CH 30V 0.98A SC89-6
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SI1303DL-T1-GE3 SI1303DL-T1-GE3 Vishay Siliconix 71075.pdf Description: MOSFET P-CH 20V 670MA SC70-3
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SI1305EDL-T1-GE3 SI1305EDL-T1-GE3 Vishay Siliconix si1305ed.pdf Description: MOSFET P-CH 8V 0.86A SOT323-3
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SI1307DL-T1-E3 SI1307DL-T1-E3 Vishay Siliconix si1307dl.pdf Description: MOSFET P-CH 12V 0.85A SOT323-3
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SI1307DL-T1-GE3 SI1307DL-T1-GE3 Vishay Siliconix si1307dl.pdf Description: MOSFET P-CH 12V 0.85A SOT323-3
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SI1402DH-T1-E3 SI1402DH-T1-E3 Vishay Siliconix si1402dh.pdf Description: MOSFET N-CH 30V 2.7A SOT363
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SI1402DH-T1-GE3 SI1402DH-T1-GE3 Vishay Siliconix si1402dh.pdf Description: MOSFET N-CH 30V 2.7A SOT363
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SI1404BDH-T1-E3 SI1404BDH-T1-E3 Vishay Siliconix si1404bd.pdf Description: MOSFET N-CH 30V 1.9A/2.37A SC70
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1404BDH-T1-GE3 SI1404BDH-T1-GE3 Vishay Siliconix si1404bd.pdf Description: MOSFET N-CH 30V 1.9A/2.37A SC70
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
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SI1405BDH-T1-E3 SI1405BDH-T1-E3 Vishay Siliconix si1405bdh.pdf Description: MOSFET P-CH 8V 1.6A SC70-6
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SI1405DL-T1-E3 SI1405DL-T1-E3 Vishay Siliconix si1405dl.pdf Description: MOSFET P-CH 8V 1.6A SC-70-6
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SI1405DL-T1-GE3 SI1405DL-T1-GE3 Vishay Siliconix si1405dl.pdf Description: MOSFET P-CH 8V 1.6A SC-70-6
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SI1406DH-T1-E3 SI1406DH-T1-E3 Vishay Siliconix si1406dh.pdf Description: MOSFET N-CH 20V 3.1A SC70-6
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SI1413DH-T1-E3 SI1413DH-T1-E3 Vishay Siliconix si1413dh.pdf Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1413DH-T1-GE3 SI1413DH-T1-GE3 Vishay Siliconix si1413dh.pdf Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1431DH-T1-E3 SI1431DH-T1-E3 Vishay Siliconix si1431dh.pdf Description: MOSFET P-CH 30V 1.7A SOT363
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SI1431DH-T1-GE3 SI1431DH-T1-GE3 Vishay Siliconix si1431dh.pdf Description: MOSFET P-CH 30V 1.7A SOT363
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SI1433DH-T1-GE3 SI1433DH-T1-GE3 Vishay Siliconix si1433dh.pdf Description: MOSFET P-CH 30V 1.9A SC70-6
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SI1450DH-T1-GE3 SI1450DH-T1-GE3 Vishay Siliconix si1450dh.pdf Description: MOSFET N-CH 8V 4.53A SC70-6
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SI1488DH-T1-GE3 SI1488DH-T1-GE3 Vishay Siliconix si1488dh.pdf Description: MOSFET N-CH 20V 6.1A SC70-6
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SI1557DH-T1-E3 SI1557DH-T1-E3 Vishay Siliconix 71944.pdf Description: MOSFET N/P-CH 12V 1.2A SC70-6
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SI1563EDH-T1-GE3 SI1563EDH-T1-GE3 Vishay Siliconix si1563edh.pdf Description: MOSFET N/P-CH 20V 1.13A SC70-6
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SI1865DL-T1-GE3 SI1865DL-T1-GE3 Vishay Siliconix si1865dl.pdf Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
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SI1867DL-T1-E3 SI1867DL-T1-E3 Vishay Siliconix si1867dl.pdf Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
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SI1867DL-T1-GE3 SI1867DL-T1-GE3 Vishay Siliconix si1867dl.pdf Description: IC LOAD SW LEVEL SHIFTER SC-70-6
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SI1900DL-T1-E3 SI1900DL-T1-E3 Vishay Siliconix si1900dl.pdf Description: MOSFET 2N-CH 30V 0.59A SC70-6
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
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SI1905BDH-T1-E3 SI1905BDH-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 8V 0.63A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 357mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1967DH-T1-E3 SI1967DH-T1-E3 Vishay Siliconix si1967dh.pdf Description: MOSFET 2P-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1970DH-T1-GE3 SI1970DH-T1-GE3 Vishay Siliconix si1970dh.pdf Description: MOSFET 2N-CH 30V 1.3A SC70-6
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SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 Vishay Siliconix si2301bds.pdf Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
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SI2301CDS-T1-E3 SI2301CDS-T1-E3 Vishay Siliconix si2301cd.pdf Description: MOSFET P-CH 20V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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SI2302ADS-T1-GE3 SI2302ADS-T1-GE3 Vishay Siliconix si2302ad.pdf Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
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SI2303BDS-T1-GE3 SI2303BDS-T1-GE3 Vishay Siliconix doc?72065 Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
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SI2303CDS-T1-E3 SI2303CDS-T1-E3 Vishay Siliconix si2303cd.pdf Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
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IRFR9310TRRPBF sihfr931.pdf
IRFR9310TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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IRFZ14STRLPBF sihfz14s.pdf
IRFZ14STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFZ24SPBF sihfz24s.pdf
IRFZ24SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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10+4.07 EUR
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IRFZ24STRRPBF doc?98239
IRFZ24STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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IRFZ34STRLPBF sihfz34s.pdf
IRFZ34STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IRFZ44SPBF sihfz44s.pdf
IRFZ44SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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IRFZ44STRLPBF sihfz44s.pdf
IRFZ44STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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IRFZ44STRRPBF sihfz44s.pdf
IRFZ44STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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IRL510SPBF sihf510s.pdf
IRL510SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
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IRL510STRLPBF sihf510s.pdf
IRL510STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
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IRL620STRLPBF sihl620s.pdf
IRL620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
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IRL640STRLPBF sihl640s.pdf
IRL640STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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IRLI540GPBF 90399.pdf
IRLI540GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 17A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
10+4.06 EUR
100+3.26 EUR
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IRLR014TRLPBF sihlr014.pdf
IRLR014TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IRLR024TRLPBF sihlr024.pdf
IRLR024TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR120TRRPBF IRLR%28U%29120%2C%20SiHLR%28U%29120.pdf
IRLR120TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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IRLZ24SPBF IRLZ24S%28L%29%2CSiHLZ24S%28L%29.pdf
IRLZ24SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar
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IRLZ34SPBF sihlz34.pdf
IRLZ34SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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SI1031X-T1-E3 si1031r.pdf
SI1031X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.155A SC-75A
Produkt ist nicht verfügbar
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SI1031X-T1-GE3 si1031r.pdf
SI1031X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.155A SC-75A
Produkt ist nicht verfügbar
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SI1037X-T1-E3 70686.pdf
SI1037X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.77A SC89
Produkt ist nicht verfügbar
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SI1037X-T1-GE3 70686.pdf
SI1037X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.77A SC89
Produkt ist nicht verfügbar
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SI1046R-T1-E3 si1046r.pdf
SI1046R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC75-3
Produkt ist nicht verfügbar
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SI1051X-T1-E3 si1051x.pdf
SI1051X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.2A SC89-6
Produkt ist nicht verfügbar
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SI1054X-T1-E3 si1054x.pdf
SI1054X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 1.32A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 8.57 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1069X-T1-E3 si1069x.pdf
SI1069X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.94A SC89-6
Produkt ist nicht verfügbar
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SI1073X-T1-E3 si1073x.pdf
SI1073X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.98A SC89-6
Produkt ist nicht verfügbar
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SI1303DL-T1-GE3 71075.pdf
SI1303DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
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SI1305EDL-T1-GE3 si1305ed.pdf
SI1305EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
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SI1307DL-T1-E3 si1307dl.pdf
SI1307DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
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SI1307DL-T1-GE3 si1307dl.pdf
SI1307DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
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SI1402DH-T1-E3 si1402dh.pdf
SI1402DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.7A SOT363
Produkt ist nicht verfügbar
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SI1402DH-T1-GE3 si1402dh.pdf
SI1402DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.7A SOT363
Produkt ist nicht verfügbar
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SI1404BDH-T1-E3 si1404bd.pdf
SI1404BDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.9A/2.37A SC70
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1404BDH-T1-GE3 si1404bd.pdf
SI1404BDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.9A/2.37A SC70
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1405BDH-T1-E3 si1405bdh.pdf
SI1405BDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Produkt ist nicht verfügbar
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SI1405DL-T1-E3 si1405dl.pdf
SI1405DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
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SI1405DL-T1-GE3 si1405dl.pdf
SI1405DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
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SI1406DH-T1-E3 si1406dh.pdf
SI1406DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.1A SC70-6
Produkt ist nicht verfügbar
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SI1413DH-T1-E3 si1413dh.pdf
SI1413DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1413DH-T1-GE3 si1413dh.pdf
SI1413DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1431DH-T1-E3 si1431dh.pdf
SI1431DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.7A SOT363
Produkt ist nicht verfügbar
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SI1431DH-T1-GE3 si1431dh.pdf
SI1431DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.7A SOT363
Produkt ist nicht verfügbar
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SI1433DH-T1-GE3 si1433dh.pdf
SI1433DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A SC70-6
Produkt ist nicht verfügbar
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SI1450DH-T1-GE3 si1450dh.pdf
SI1450DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4.53A SC70-6
Produkt ist nicht verfügbar
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SI1488DH-T1-GE3 si1488dh.pdf
SI1488DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.1A SC70-6
Produkt ist nicht verfügbar
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SI1557DH-T1-E3 71944.pdf
SI1557DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 1.2A SC70-6
Produkt ist nicht verfügbar
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SI1563EDH-T1-GE3 si1563edh.pdf
SI1563EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
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SI1865DL-T1-GE3 si1865dl.pdf
SI1865DL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
Produkt ist nicht verfügbar
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SI1867DL-T1-E3 si1867dl.pdf
SI1867DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
Produkt ist nicht verfügbar
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SI1867DL-T1-GE3 si1867dl.pdf
SI1867DL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC LOAD SW LEVEL SHIFTER SC-70-6
Produkt ist nicht verfügbar
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SI1900DL-T1-E3 si1900dl.pdf
SI1900DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
6000+0.36 EUR
9000+0.33 EUR
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SI1905BDH-T1-E3
SI1905BDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.63A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 357mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1967DH-T1-E3 si1967dh.pdf
SI1967DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
6000+0.27 EUR
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SI1970DH-T1-GE3 si1970dh.pdf
SI1970DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
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SI2301BDS-T1-GE3 si2301bds.pdf
SI2301BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Produkt ist nicht verfügbar
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SI2301CDS-T1-E3 si2301cd.pdf
SI2301CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
9000+0.3 EUR
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SI2302ADS-T1-GE3 si2302ad.pdf
SI2302ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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SI2303BDS-T1-GE3 doc?72065
SI2303BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar
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SI2303CDS-T1-E3 si2303cd.pdf
SI2303CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.36 EUR
6000+0.32 EUR
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