Die Produkte vishay siliconix
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]
| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
| SI5476DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 60V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Drain to Source Voltage (Vdss): 60V FET Type: MOSFET N-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5480DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V FET Type: MOSFET N-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21947 Stücke - Preis und Lieferfrist anzeigen
|
||
| SI5481DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK CHIPFET Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5482DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5484DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5485DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Type: MOSFET P-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
SI5486DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 12A PPAK CHIPFET Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V Supplier Device Package: 8-PowerPak® ChipFet (3x1.9) Package / Case: 8-PowerPak® ChipFET™ FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI5499DC-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 8V 6A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.2W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SI5853DC-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A 1206-8 FET Feature: Schottky Diode (Isolated) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.1W (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 51574 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI5856DC-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 4.4A 1206-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drain to Source Voltage (Vdss): 20V Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead FET Feature: Schottky Diode (Isolated) FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI5857DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 6A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 10.4W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SI5858DU-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 6A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 8.3W Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET N-Channel, Metal Oxide Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI6459BDQ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 60V 2.2A 8-TSSOP Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Drain to Source Voltage (Vdss): 60V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI7344DP-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 11A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 96 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI7476DP-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 15A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drain to Source Voltage (Vdss): 40V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Supplier Device Package: PowerPAK® SO-8 FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3110 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI7848DP-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 10.4A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): ±20V Power Dissipation (Max): 1.83W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66890 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI8404DB-T1-E1 |
|
Vishay Siliconix |
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Base Part Number: SI8404 Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-Microfoot Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Drain to Source Voltage (Vdss): 8V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 4V Vgs (Max): ±5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI8435DB-T1-E1 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 2X2 4-MFP Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.25W Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V FET Type: MOSFET P-Channel, Metal Oxide Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SIA443DJ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 9A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 15W Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA FET Type: MOSFET P-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SIA810DJ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 4.5A SC-70-6 Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.5W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SIA811DJ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A SC70-6 Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) FET Feature: Schottky Diode (Isolated) Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150000 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SIB411DK-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 9A SC75-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Base Part Number: SIB411 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SIB412DK-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 9A SC75-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Base Part Number: SIB412 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SIE806DF-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 60A 10-POLARPAK Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 10-PolarPAK® (L) Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 125W Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SIE820DF-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 50A 10-POLARPAK FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 10-PolarPAK® (S) Package / Case: 10-PolarPAK® (S) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 104W Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SIE830DF-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 50A 10-POLARPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 104W Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 10-PolarPAK® (S) Package / Case: 10-PolarPAK® (S) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
,TO-226_straightlead.jpg "TP0610KL-TR1-E3") |
TP0610KL-TR1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 60V 270MA TO226AA Supplier Device Package: TO-226AA (TO-92) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SUM36N20-54P-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 200V 36A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Part Status: Obsolete Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.12W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SUM110N04-05H-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SUM47N10-24L-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 47A D2PAK Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide Power - Max: 3.75W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI4398DY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 19A 8-SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Power Dissipation (Max): 1.6W (Ta) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SIA811DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A SC70-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SIB412DK-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 9A SC75-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Base Part Number: SIB412 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI1046X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 0.606A SC89-3 Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V Vgs(th) (Max) @ Id: 950mV @ 250µA Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI1051X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 8V 1.2A SC89-6 Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI7601DN-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 16A 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SIB413DK-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 9A SC75-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.63nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Base Part Number: SIB413 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SIB419DK-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 12V 9A SC75-6 Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 12V Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Mounting Type: Surface Mount FET Type: MOSFET P-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13.1W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1080 Stücke - Preis und Lieferfrist anzeigen
|
| SI5476DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
| SI5480DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 21947 Stücke - Preis und Lieferfrist anzeigen
| SI5481DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A PPAK CHIPFET
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
FET Type: MOSFET P-Channel, Metal Oxide
| SI5482DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SI5484DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
| SI5485DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
| SI5486DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Package / Case: 8-PowerPak® ChipFET™
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 12A PPAK CHIPFET
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Package / Case: 8-PowerPak® ChipFET™
FET Type: MOSFET N-Channel, Metal Oxide
| SI5499DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.2W
| SI5853DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 1206-8
FET Feature: Schottky Diode (Isolated)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.7A 1206-8
FET Feature: Schottky Diode (Isolated)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
auf Bestellung 51574 Stücke - Preis und Lieferfrist anzeigen
| SI5856DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.4A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 4.4A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
| SI5857DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
| SI5858DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
| SI6459BDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 2.2A 8-TSSOP
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI7344DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 96 Stücke - Preis und Lieferfrist anzeigen
| SI7476DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 40V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Supplier Device Package: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 15A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 40V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Supplier Device Package: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3110 Stücke - Preis und Lieferfrist anzeigen
| SI7848DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.83W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 10.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.83W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 66890 Stücke - Preis und Lieferfrist anzeigen
| SI8404DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Base Part Number: SI8404
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 4V
Vgs (Max): ±5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 8V 12.2A 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Base Part Number: SI8404
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 4V
Vgs (Max): ±5V
| SI8435DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 2X2 4-MFP
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 10A 2X2 4-MFP
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 20V
| SIA443DJ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
| SIA810DJ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC-70-6
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 4.5A SC-70-6
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
| SIA811DJ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4.5A SC70-6
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
auf Bestellung 150000 Stücke - Preis und Lieferfrist anzeigen
| SIB411DK-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB411
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB411
| SIB412DK-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB412
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB412
| SIE806DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A 10-POLARPAK
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
| SIE820DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 50A 10-POLARPAK
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
| SIE830DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 50A 10-POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
| TP0610KL-TR1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 270MA TO226AA
Supplier Device Package: TO-226AA (TO-92)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 270MA TO226AA
Supplier Device Package: TO-226AA (TO-92)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
| SUM36N20-54P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 36A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Part Status: Obsolete
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| SUM110N04-05H-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
| SUM47N10-24L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 47A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 3.75W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 47A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 3.75W
| SI4398DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 19A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SIA811DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
| SIB412DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB412
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB412
| SI1046X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC89-3
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 0.606A SC89-3
Supplier Device Package: SC-89-3
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
| SI1051X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.2A SC89-6
Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 1.2A SC89-6
Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
| SI7601DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 16A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
| SIB413DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.63nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB413
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.63nC @ 5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Base Part Number: SIB413
| SIB419DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC75-6
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 9A SC75-6
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13.1W
auf Bestellung 1080 Stücke - Preis und Lieferfrist anzeigen
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]