Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11837) > Seite 68 nach 198

Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 57 63 64 65 66 67 68 69 70 71 72 73 76 95 114 133 152 171 190 198  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SI3446ADV-T1-GE3 SI3446ADV-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 20V 6A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3447BDV-T1-GE3 SI3447BDV-T1-GE3 Vishay Siliconix 72020.pdf Description: MOSFET P-CH 12V 4.5A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3447CDV-T1-E3 SI3447CDV-T1-E3 Vishay Siliconix si3447cd.pdf Description: MOSFET P-CH 12V 7.8A 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3451DV-T1-GE3 SI3451DV-T1-GE3 Vishay Siliconix si3451dv.pdf Description: MOSFET P-CH 20V 2.8A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3454ADV-T1-GE3 SI3454ADV-T1-GE3 Vishay Siliconix 71108.pdf Description: MOSFET N-CH 30V 3.4A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3454CDV-T1-E3 SI3454CDV-T1-E3 Vishay Siliconix si3454cd.pdf Description: MOSFET N-CH 30V 4.2A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3454CDV-T1-GE3 SI3454CDV-T1-GE3 Vishay Siliconix si3454cd.pdf Description: MOSFET N-CH 30V 4.2A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3455ADV-T1-GE3 SI3455ADV-T1-GE3 Vishay Siliconix 71090.pdf Description: MOSFET P-CH 30V 2.7A 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3456BDV-T1-GE3 SI3456BDV-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 4.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3456CDV-T1-E3 SI3456CDV-T1-E3 Vishay Siliconix si3456cd.pdf Description: MOSFET N-CH 30V 7.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3456CDV-T1-GE3 SI3456CDV-T1-GE3 Vishay Siliconix si3456cd.pdf Description: MOSFET N-CH 30V 7.7A 6TSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3456DDV-T1-E3 SI3456DDV-T1-E3 Vishay Siliconix si3456ddv.pdf Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3457BDV-T1-GE3 SI3457BDV-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 3.7A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3457CDV-T1-E3 SI3457CDV-T1-E3 Vishay Siliconix si3457cdv.pdf Description: MOSFET P-CH 30V 5.1A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3457CDV-T1-GE3 SI3457CDV-T1-GE3 Vishay Siliconix si3457cdv.pdf Description: MOSFET P-CH 30V 5.1A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
9000+0.33 EUR
21000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3458BDV-T1-E3 SI3458BDV-T1-E3 Vishay Siliconix si3458bdv.pdf Description: MOSFET N-CH 60V 4.1A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.64 EUR
6000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Siliconix Si3458BDV.PDF Description: MOSFET N-CH 60V 4.1A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.64 EUR
6000+0.6 EUR
9000+0.57 EUR
15000+0.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3460DV-T1-E3 SI3460DV-T1-E3 Vishay Siliconix si3460dv.pdf Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3460DV-T1-GE3 SI3460DV-T1-GE3 Vishay Siliconix si3460dv.pdf Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3465DV-T1-GE3 SI3465DV-T1-GE3 Vishay Siliconix 72787.pdf Description: MOSFET P-CH 20V 3A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3467DV-T1-GE3 SI3467DV-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 20V 3.8A 6TSOP
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3473CDV-T1-E3 SI3473CDV-T1-E3 Vishay Siliconix si3473cd.pdf Description: MOSFET P-CH 12V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3473DV-T1-GE3 SI3473DV-T1-GE3 Vishay Siliconix 71937.pdf Description: MOSFET P-CH 12V 5.9A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3481DV-T1-GE3 SI3481DV-T1-GE3 Vishay Siliconix 72105.pdf Description: MOSFET P-CH 30V 4A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3483DV-T1-GE3 SI3483DV-T1-GE3 Vishay Siliconix 72078.pdf Description: MOSFET P-CH 30V 4.7A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3493DV-T1-E3 SI3493DV-T1-E3 Vishay Siliconix si3493dv.pdf Description: MOSFET P-CH 20V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3493DV-T1-GE3 SI3493DV-T1-GE3 Vishay Siliconix si3493dv.pdf Description: MOSFET P-CH 20V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3495DV-T1-GE3 SI3495DV-T1-GE3 Vishay Siliconix si3495dv.pdf Description: MOSFET P-CH 20V 5.3A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3499DV-T1-GE3 SI3499DV-T1-GE3 Vishay Siliconix si3499dv.pdf Description: MOSFET P-CH 8V 5.3A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 750mV @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3529DV-T1-E3 SI3529DV-T1-E3 Vishay Siliconix si3529dv.pdf Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3529DV-T1-GE3 SI3529DV-T1-GE3 Vishay Siliconix si3529dv.pdf Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si3590DV-T1-GE3 Si3590DV-T1-GE3 Vishay Siliconix si3590dv.pdf Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3805DV-T1-E3 SI3805DV-T1-E3 Vishay Siliconix si3805dv.pdf Description: MOSFET P-CH 20V 3.3A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3812DV-T1-GE3 SI3812DV-T1-GE3 Vishay Siliconix 71069.pdf Description: MOSFET N-CH 20V 2A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3831DV-T1-E3 SI3831DV-T1-E3 Vishay Siliconix 70785.pdf Description: IC PWR SW BI-DIR PCHAN 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3831DV-T1-GE3 SI3831DV-T1-GE3 Vishay Siliconix 70785.pdf Description: IC PWR SW BI-DIR PCHAN 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3853DV-T1-GE3 SI3853DV-T1-GE3 Vishay Siliconix 70979.pdf Description: MOSFET P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3861BDV-T1-GE3 SI3861BDV-T1-GE3 Vishay Siliconix si3861bd.pdf Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3865BDV-T1-GE3 SI3865BDV-T1-GE3 Vishay Siliconix 72848.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Supplier Device Package: 6-TSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.9A
Voltage - Load: 1.8V ~ 8V
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3865CDV-T1-E3 SI3865CDV-T1-E3 Vishay Siliconix si3865cd.pdf Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3865CDV-T1-GE3 SI3865CDV-T1-GE3 Vishay Siliconix si3865cd.pdf Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3867DV-T1-GE3 SI3867DV-T1-GE3 Vishay Siliconix 72608.pdf Description: MOSFET P-CH 20V 3.9A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3879DV-T1-E3 SI3879DV-T1-E3 Vishay Siliconix si3879dv.pdf Description: MOSFET P-CH 20V 5A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3879DV-T1-GE3 SI3879DV-T1-GE3 Vishay Siliconix si3879dv.pdf Description: MOSFET P-CH 20V 5A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3905DV-T1-E3 SI3905DV-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 8V 6TSOP
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3905DV-T1-GE3 SI3905DV-T1-GE3 Vishay Siliconix si3905dv.pdf Description: MOSFET 2P-CH 8V 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3909DV-T1-E3 SI3909DV-T1-E3 Vishay Siliconix 70968.pdf Description: MOSFET 2P-CH 20V 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3909DV-T1-GE3 SI3909DV-T1-GE3 Vishay Siliconix 70968.pdf Description: MOSFET 2P-CH 20V 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3911DV-T1-GE3 SI3911DV-T1-GE3 Vishay Siliconix 71380.pdf Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3948DV-T1-GE3 SI3948DV-T1-GE3 Vishay Siliconix 70969.pdf Description: MOSFET 2N-CH 30V 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3951DV-T1-GE3 SI3951DV-T1-GE3 Vishay Siliconix si3951dv.pdf Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3981DV-T1-GE3 SI3981DV-T1-GE3 Vishay Siliconix 72502.pdf Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3983DV-T1-GE3 SI3983DV-T1-GE3 Vishay Siliconix 72316.pdf Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3993DV-T1-GE3 SI3993DV-T1-GE3 Vishay Siliconix 72320.pdf Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4100DY-T1-E3 SI4100DY-T1-E3 Vishay Siliconix si4100dy.pdf Description: MOSFET N-CH 100V 6.8A 8SO
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.04 EUR
5000+0.96 EUR
7500+0.95 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4100DY-T1-GE3 SI4100DY-T1-GE3 Vishay Siliconix si4100dy.pdf Description: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4102DY-T1-E3 SI4102DY-T1-E3 Vishay Siliconix si4102dy.pdf Description: MOSFET N-CH 100V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4104DY-T1-E3 SI4104DY-T1-E3 Vishay Siliconix si4104dy.pdf Description: MOSFET N-CH 100V 4.6A 8-SOIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4114DY-T1-E3 SI4114DY-T1-E3 Vishay Siliconix si4114dy.pdf Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.39 EUR
5000+1.37 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4124DY-T1-E3 SI4124DY-T1-E3 Vishay Siliconix si4124dy.pdf Description: MOSFET N-CH 40V 20.5A 8SO
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3446ADV-T1-GE3
SI3446ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3447BDV-T1-GE3 72020.pdf
SI3447BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.5A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3447CDV-T1-E3 si3447cd.pdf
SI3447CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.8A 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3451DV-T1-GE3 si3451dv.pdf
SI3451DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.8A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3454ADV-T1-GE3 71108.pdf
SI3454ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.4A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3454CDV-T1-E3 si3454cd.pdf
SI3454CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.2A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3454CDV-T1-GE3 si3454cd.pdf
SI3454CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.2A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3455ADV-T1-GE3 71090.pdf
SI3455ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3456BDV-T1-GE3
SI3456BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3456CDV-T1-E3 si3456cd.pdf
SI3456CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.7A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3456CDV-T1-GE3 si3456cd.pdf
SI3456CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.7A 6TSOP
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3456DDV-T1-E3 si3456ddv.pdf
SI3456DDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3457BDV-T1-GE3
SI3457BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.7A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3457CDV-T1-E3 si3457cdv.pdf
SI3457CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.1A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3457CDV-T1-GE3 si3457cdv.pdf
SI3457CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.1A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
9000+0.33 EUR
21000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3458BDV-T1-E3 si3458bdv.pdf
SI3458BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.64 EUR
6000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3458BDV-T1-GE3 Si3458BDV.PDF
SI3458BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.64 EUR
6000+0.6 EUR
9000+0.57 EUR
15000+0.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3460DV-T1-E3 si3460dv.pdf
SI3460DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3460DV-T1-GE3 si3460dv.pdf
SI3460DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3465DV-T1-GE3 72787.pdf
SI3465DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3467DV-T1-GE3
SI3467DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6TSOP
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3473CDV-T1-E3 si3473cd.pdf
SI3473CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3473DV-T1-GE3 71937.pdf
SI3473DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3481DV-T1-GE3 72105.pdf
SI3481DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3483DV-T1-GE3 72078.pdf
SI3483DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3493DV-T1-E3 si3493dv.pdf
SI3493DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3493DV-T1-GE3 si3493dv.pdf
SI3493DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3495DV-T1-GE3 si3495dv.pdf
SI3495DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3499DV-T1-GE3 si3499dv.pdf
SI3499DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 750mV @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3529DV-T1-E3 si3529dv.pdf
SI3529DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3529DV-T1-GE3 si3529dv.pdf
SI3529DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si3590DV-T1-GE3 si3590dv.pdf
Si3590DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3805DV-T1-E3 si3805dv.pdf
SI3805DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3812DV-T1-GE3 71069.pdf
SI3812DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3831DV-T1-E3 70785.pdf
SI3831DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SW BI-DIR PCHAN 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3831DV-T1-GE3 70785.pdf
SI3831DV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SW BI-DIR PCHAN 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3853DV-T1-GE3 70979.pdf
SI3853DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3861BDV-T1-GE3 si3861bd.pdf
SI3861BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3865BDV-T1-GE3 72848.pdf
SI3865BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Supplier Device Package: 6-TSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.9A
Voltage - Load: 1.8V ~ 8V
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3865CDV-T1-E3 si3865cd.pdf
SI3865CDV-T1-E3
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3865CDV-T1-GE3 si3865cd.pdf
SI3865CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3867DV-T1-GE3 72608.pdf
SI3867DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3879DV-T1-E3 si3879dv.pdf
SI3879DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3879DV-T1-GE3 si3879dv.pdf
SI3879DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3905DV-T1-E3
SI3905DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 6TSOP
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3905DV-T1-GE3 si3905dv.pdf
SI3905DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3909DV-T1-E3 70968.pdf
SI3909DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3909DV-T1-GE3 70968.pdf
SI3909DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3911DV-T1-GE3 71380.pdf
SI3911DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3948DV-T1-GE3 70969.pdf
SI3948DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3951DV-T1-GE3 si3951dv.pdf
SI3951DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3981DV-T1-GE3 72502.pdf
SI3981DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3983DV-T1-GE3 72316.pdf
SI3983DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI3993DV-T1-GE3 72320.pdf
SI3993DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4100DY-T1-E3 si4100dy.pdf
SI4100DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.04 EUR
5000+0.96 EUR
7500+0.95 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4100DY-T1-GE3 si4100dy.pdf
SI4100DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4102DY-T1-E3 si4102dy.pdf
SI4102DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4104DY-T1-E3 si4104dy.pdf
SI4104DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.6A 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4114DY-T1-E3 si4114dy.pdf
SI4114DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.39 EUR
5000+1.37 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4124DY-T1-E3 si4124dy.pdf
SI4124DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.5A 8SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 19 38 57 63 64 65 66 67 68 69 70 71 72 73 76 95 114 133 152 171 190 198  [ Nächste Seite >> ]