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SI4840BDY-T1-E3 SI4840BDY-T1-E3 Vishay Siliconix si4840bdy.pdf Description: MOSFET N-CH 40V 19A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4840BDY-T1-GE3 SI4840BDY-T1-GE3 Vishay Siliconix si4840bdy.pdf Description: MOSFET N-CH 40V 19A 8SO
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.4A, 10V
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SI4840DY-T1-GE3 SI4840DY-T1-GE3 Vishay Siliconix 71188.pdf Description: MOSFET N-CH 40V 10A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4842BDY-T1-E3 SI4842BDY-T1-E3 Vishay Siliconix si4842bd.pdf Description: MOSFET N-CH 30V 28A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4850EY-T1 SI4850EY-T1 Vishay Siliconix 71146.pdf Description: MOSFET N-CH 60V 6A 8SO
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4858DY-T1-E3 SI4858DY-T1-E3 Vishay Siliconix 70690.pdf Description: MOSFET N-CH 30V 13A 8-SOIC
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SI4858DY-T1-GE3 SI4858DY-T1-GE3 Vishay Siliconix 70690.pdf Description: MOSFET N-CH 30V 13A 8-SOIC
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Si4860DY-T1-E3 Si4860DY-T1-E3 Vishay Siliconix 71752.pdf Description: MOSFET N-CH 30V 11A 8-SOIC
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SI4860DY-T1-GE3 SI4860DY-T1-GE3 Vishay Siliconix 71752.pdf Description: MOSFET N-CH 30V 11A 8-SOIC
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SI4862DY-T1-E3 SI4862DY-T1-E3 Vishay Siliconix si4862dy.pdf Description: MOSFET N-CH 16V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4862DY-T1-GE3 SI4862DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 16V 17A 8SO
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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Si4864DY-T1-E3 Si4864DY-T1-E3 Vishay Siliconix 71449.pdf Description: MOSFET N-CH 20V 17A 8-SOIC
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SI4866BDY-T1-E3 SI4866BDY-T1-E3 Vishay Siliconix si4866bd.pdf Description: MOSFET N-CH 12V 21.5A 8-SOIC
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SI4866DY-T1-E3 SI4866DY-T1-E3 Vishay Siliconix si4866dy.pdf Description: MOSFET N-CH 12V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4874BDY-T1-GE3 SI4874BDY-T1-GE3 Vishay Siliconix si4874bd.pdf Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4876DY-T1-GE3 SI4876DY-T1-GE3 Vishay Siliconix 71312.pdf Description: MOSFET N-CH 20V 14A 8-SOIC
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SI4880DY-T1-E3 SI4880DY-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 13A 8-SOIC
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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SI4880DY-T1-GE3 SI4880DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 13A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4884BDY-T1-E3 SI4884BDY-T1-E3 Vishay Siliconix 73454.pdf Description: MOSFET N-CH 30V 16.5A 8-SOIC
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SI4884BDY-T1-GE3 SI4884BDY-T1-GE3 Vishay Siliconix 73454.pdf Description: MOSFET N-CH 30V 16.5A 8-SOIC
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Si4886DY-T1-E3 Si4886DY-T1-E3 Vishay Siliconix 71142.pdf Description: MOSFET N-CH 30V 9.5A 8-SOIC
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SI4886DY-T1-GE3 SI4886DY-T1-GE3 Vishay Siliconix 71142.pdf Description: MOSFET N-CH 30V 9.5A 8-SOIC
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SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix 71336.pdf Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4888DY-T1-GE3 SI4888DY-T1-GE3 Vishay Siliconix 71336.pdf Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Si4890BDY-T1-E3 Si4890BDY-T1-E3 Vishay Siliconix si4890bd.pdf Description: MOSFET N-CH 30V 16A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4890DY-T1-GE3 SI4890DY-T1-GE3 Vishay Siliconix Si4890DY.pdf Description: MOSFET N-CH 30V 11A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4892DY-T1-E3 SI4892DY-T1-E3 Vishay Siliconix 71407.pdf Description: MOSFET N-CH 30V 8.8A 8SO
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SI4892DY-T1-GE3 SI4892DY-T1-GE3 Vishay Siliconix 71407.pdf Description: MOSFET N-CH 30V 8.8A 8SO
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SI4900DY-T1-GE3 SI4900DY-T1-GE3 Vishay Siliconix si4900dy.pdf Description: MOSFET 2N-CH 60V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4908DY-T1-GE3 SI4908DY-T1-GE3 Vishay Siliconix doc?73698 Description: MOSFET 2N-CH 40V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.75W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Si4914BDY-T1-E3 Si4914BDY-T1-E3 Vishay Siliconix si4914bd.pdf Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W, 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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SI4916DY-T1-GE3 SI4916DY-T1-GE3 Vishay Siliconix si4916dy.pdf Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W, 3.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4920DY-T1-E3 SI4920DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4920DY-T1-GE3 SI4920DY-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 30V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4923DY-T1-E3 SI4923DY-T1-E3 Vishay Siliconix 72069.pdf Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
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SI4923DY-T1-GE3 SI4923DY-T1-GE3 Vishay Siliconix 72069.pdf Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
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SI4925DDY-T1-GE3 SI4925DDY-T1-GE3 Vishay Siliconix si4925dd.pdf Description: MOSFET 2P-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4933DY-T1-GE3 SI4933DY-T1-GE3 Vishay Siliconix 71980.pdf Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
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SI4936ADY-T1-E3 SI4936ADY-T1-E3 Vishay Siliconix si4936ad.pdf Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4936ADY-T1-GE3 SI4936ADY-T1-GE3 Vishay Siliconix si4936ad.pdf Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4936BDY-T1-GE3 SI4936BDY-T1-GE3 Vishay Siliconix Si4936BDY.PDF Description: MOSFET 2N-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 Vishay Siliconix si4936cdy.pdf Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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Si4940DY-T1-E3 Si4940DY-T1-E3 Vishay Siliconix si4940dy.pdf Description: MOSFET 2N-CH 40V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4940DY-T1-GE3 SI4940DY-T1-GE3 Vishay Siliconix si4940dy.pdf Description: MOSFET 2N-CH 40V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4942DY-T1-E3 SI4942DY-T1-E3 Vishay Siliconix doc?71887 Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
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SI4942DY-T1-GE3 SI4942DY-T1-GE3 Vishay Siliconix doc?71887 Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI4943BDY-T1-GE3 SI4943BDY-T1-GE3 Vishay Siliconix doc?73073 Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4944DY-T1-GE3 SI4944DY-T1-GE3 Vishay Siliconix 72512.pdf Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4952DY-T1-E3 SI4952DY-T1-E3 Vishay Siliconix si4952dy.pdf Description: MOSFET 2N-CH 25V 8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
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SI4963BDY-T1-GE3 SI4963BDY-T1-GE3 Vishay Siliconix si4963bd.pdf Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
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SI4965DY-T1-E3 SI4965DY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 8V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4965DY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 8V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4966DY-T1-E3 SI4966DY-T1-E3 Vishay Siliconix si4966dy.pdf Description: MOSFET 2N-CH 20V 8SOIC
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SI4966DY-T1-GE3 SI4966DY-T1-GE3 Vishay Siliconix si4966dy.pdf Description: MOSFET 2N-CH 20V 8SOIC
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SI4967DY-T1-E3 SI4967DY-T1-E3 Vishay Siliconix 70813.pdf Description: MOSFET 2P-CH 12V 8SOIC
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SI4967DY-T1-GE3 SI4967DY-T1-GE3 Vishay Siliconix 70813.pdf Description: MOSFET 2P-CH 12V 8SOIC
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SI4972DY-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4973DY-T1-GE3 SI4973DY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI5401DC-T1-GE3 SI5401DC-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 20V 5.2A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI5402DC-T1-E3 SI5402DC-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 4.9A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4840BDY-T1-E3 si4840bdy.pdf
SI4840BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 19A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+1.25 EUR
5000+1.17 EUR
7500+1.12 EUR
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SI4840BDY-T1-GE3 si4840bdy.pdf
SI4840BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 19A 8SO
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.4A, 10V
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SI4840DY-T1-GE3 71188.pdf
SI4840DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4842BDY-T1-E3 si4842bd.pdf
SI4842BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 28A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4850EY-T1 71146.pdf
SI4850EY-T1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4858DY-T1-E3 70690.pdf
SI4858DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 13A 8-SOIC
Produkt ist nicht verfügbar
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SI4858DY-T1-GE3 70690.pdf
SI4858DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 13A 8-SOIC
Produkt ist nicht verfügbar
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Si4860DY-T1-E3 71752.pdf
Si4860DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Produkt ist nicht verfügbar
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SI4860DY-T1-GE3 71752.pdf
SI4860DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Produkt ist nicht verfügbar
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SI4862DY-T1-E3 si4862dy.pdf
SI4862DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 16V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4862DY-T1-GE3
SI4862DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 16V 17A 8SO
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Produkt ist nicht verfügbar
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Si4864DY-T1-E3 71449.pdf
Si4864DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 17A 8-SOIC
Produkt ist nicht verfügbar
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SI4866BDY-T1-E3 si4866bd.pdf
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
Produkt ist nicht verfügbar
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SI4866DY-T1-E3 si4866dy.pdf
SI4866DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.77 EUR
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SI4874BDY-T1-GE3 si4874bd.pdf
SI4874BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4876DY-T1-GE3 71312.pdf
SI4876DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Produkt ist nicht verfügbar
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SI4880DY-T1-E3
SI4880DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 13A 8-SOIC
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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SI4880DY-T1-GE3
SI4880DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 13A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4884BDY-T1-E3 73454.pdf
SI4884BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.5A 8-SOIC
Produkt ist nicht verfügbar
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SI4884BDY-T1-GE3 73454.pdf
SI4884BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.5A 8-SOIC
Produkt ist nicht verfügbar
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Si4886DY-T1-E3 71142.pdf
Si4886DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Produkt ist nicht verfügbar
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SI4886DY-T1-GE3 71142.pdf
SI4886DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Produkt ist nicht verfügbar
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SI4888DY-T1-E3 71336.pdf
SI4888DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4888DY-T1-GE3 71336.pdf
SI4888DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Si4890BDY-T1-E3 si4890bd.pdf
Si4890BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4890DY-T1-GE3 Si4890DY.pdf
SI4890DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4892DY-T1-E3 71407.pdf
SI4892DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.8A 8SO
Produkt ist nicht verfügbar
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SI4892DY-T1-GE3 71407.pdf
SI4892DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.8A 8SO
Produkt ist nicht verfügbar
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SI4900DY-T1-GE3 si4900dy.pdf
SI4900DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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SI4908DY-T1-GE3 doc?73698
SI4908DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.75W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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Si4914BDY-T1-E3 si4914bd.pdf
Si4914BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W, 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar
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SI4916DY-T1-GE3 si4916dy.pdf
SI4916DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W, 3.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4920DY-T1-E3
SI4920DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4920DY-T1-GE3
SI4920DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4923DY-T1-E3 72069.pdf
SI4923DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SI4923DY-T1-GE3 72069.pdf
SI4923DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6.2A 8-SOIC
Produkt ist nicht verfügbar
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SI4925DDY-T1-GE3 si4925dd.pdf
SI4925DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.8 EUR
5000+0.74 EUR
7500+0.71 EUR
12500+0.68 EUR
17500+0.65 EUR
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SI4933DY-T1-GE3 71980.pdf
SI4933DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Produkt ist nicht verfügbar
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SI4936ADY-T1-E3 si4936ad.pdf
SI4936ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.46 EUR
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SI4936ADY-T1-GE3 si4936ad.pdf
SI4936ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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SI4936BDY-T1-GE3 Si4936BDY.PDF
SI4936BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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SI4936CDY-T1-GE3 si4936cdy.pdf
SI4936CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.49 EUR
7500+0.43 EUR
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Si4940DY-T1-E3 si4940dy.pdf
Si4940DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4940DY-T1-GE3 si4940dy.pdf
SI4940DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4942DY-T1-E3 doc?71887
SI4942DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Produkt ist nicht verfügbar
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SI4942DY-T1-GE3 doc?71887
SI4942DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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SI4943BDY-T1-GE3 doc?73073
SI4943BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4944DY-T1-GE3 72512.pdf
SI4944DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4952DY-T1-E3 si4952dy.pdf
SI4952DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Produkt ist nicht verfügbar
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SI4963BDY-T1-GE3 si4963bd.pdf
SI4963BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4965DY-T1-E3
SI4965DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss): 8V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4965DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4966DY-T1-E3 si4966dy.pdf
SI4966DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
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SI4966DY-T1-GE3 si4966dy.pdf
SI4966DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
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SI4967DY-T1-E3 70813.pdf
SI4967DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Produkt ist nicht verfügbar
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SI4967DY-T1-GE3 70813.pdf
SI4967DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Produkt ist nicht verfügbar
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SI4972DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4973DY-T1-GE3
SI4973DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI5401DC-T1-GE3
SI5401DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI5402DC-T1-E3
SI5402DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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