Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10949) > Seite 71 nach 183
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SI3473CDV-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI3473DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 5.9A 6-TSOP |
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SI3481DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 4A 6-TSOP |
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SI3483DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 4.7A 6-TSOP |
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SI3493DV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5.3A 6-TSOP |
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SI3493DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5.3A 6-TSOP |
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SI3495DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5.3A 6-TSOP |
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SI3499DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3529DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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SI3529DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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Si3590DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3805DV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.3A 6-TSOP |
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SI3812DV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 2A 6-TSOP |
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SI3831DV-T1-E3 | Vishay Siliconix | Description: IC PWR SW BI-DIR PCHAN 6TSOP |
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SI3831DV-T1-GE3 | Vishay Siliconix | Description: IC PWR SW BI-DIR PCHAN 6TSOP |
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SI3853DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 1.6A 6-TSOP |
Produkt ist nicht verfügbar |
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SI3861BDV-T1-GE3 | Vishay Siliconix | Description: IC LOAD SWITCH LVL SHIFT 6-TSOP |
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SI3865BDV-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 45mOhm Voltage - Load: 1.8V ~ 8V Current - Output (Max): 2.9A Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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SI3865CDV-T1-E3 | Vishay Siliconix | Description: IC LOAD SWITCH LVL SHIFT 6-TSOP |
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SI3865CDV-T1-GE3 | Vishay Siliconix | Description: IC LOAD SWITCH LVL SHIFT 6-TSOP |
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SI3867DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.9A 6-TSOP |
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SI3879DV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5A 6-TSOP |
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SI3879DV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5A 6-TSOP |
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SI3905DV-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 6-TSOP |
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SI3905DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 6-TSOP |
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SI3909DV-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 6TSOP |
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SI3909DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 6TSOP |
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SI3911DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 1.8A 6TSOP |
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SI3948DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 6-TSOP |
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SI3951DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 2.7A 6-TSOP |
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SI3981DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 1.6A 6-TSOP |
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SI3983DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 2.1A 6-TSOP |
Produkt ist nicht verfügbar |
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SI3993DV-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 1.8A 6-TSOP |
Produkt ist nicht verfügbar |
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SI4100DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V |
auf Bestellung 27500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4100DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4102DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 3.8A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4104DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 4.6A 8-SOIC |
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SI4114DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI4124DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 20.5A 8SO |
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SI4128DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 10.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4128DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 10.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4134DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4134DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4136DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 46A 8SO |
Produkt ist nicht verfügbar |
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SI4158DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 36.5A 8SO |
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SI4160DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 25.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI4162DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 19.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
auf Bestellung 27500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4166DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI4168DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4172DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 15A 8-SOIC |
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SI4174DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 17A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4176DY-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 12A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4186DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4196DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 8A 8SOIC |
Produkt ist nicht verfügbar |
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SI4210DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 6.5A 8-SOIC |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4214DDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4226DY-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 8A 8SOIC |
Produkt ist nicht verfügbar |
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SI4230DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 8A 8SOIC |
Produkt ist nicht verfügbar |
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SI4310BDY-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 7.5A 14SOIC |
Produkt ist nicht verfügbar |
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SI4320DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 17A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V |
Produkt ist nicht verfügbar |
SI3473CDV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Produkt ist nicht verfügbar
SI3473DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 6-TSOP
Description: MOSFET P-CH 12V 5.9A 6-TSOP
Produkt ist nicht verfügbar
SI3481DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A 6-TSOP
Description: MOSFET P-CH 30V 4A 6-TSOP
Produkt ist nicht verfügbar
SI3483DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 6-TSOP
Description: MOSFET P-CH 30V 4.7A 6-TSOP
Produkt ist nicht verfügbar
SI3493DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Produkt ist nicht verfügbar
SI3493DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Produkt ist nicht verfügbar
SI3495DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Produkt ist nicht verfügbar
SI3499DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Description: MOSFET P-CH 8V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.96 EUR |
SI3529DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
SI3529DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
Si3590DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.83 EUR |
6000+ | 0.77 EUR |
SI3805DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Produkt ist nicht verfügbar
SI3812DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2A 6-TSOP
Description: MOSFET N-CH 20V 2A 6-TSOP
Produkt ist nicht verfügbar
SI3831DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: IC PWR SW BI-DIR PCHAN 6TSOP
Description: IC PWR SW BI-DIR PCHAN 6TSOP
Produkt ist nicht verfügbar
SI3831DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SW BI-DIR PCHAN 6TSOP
Description: IC PWR SW BI-DIR PCHAN 6TSOP
Produkt ist nicht verfügbar
SI3853DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.6A 6-TSOP
Description: MOSFET P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
SI3861BDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
SI3865BDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 2.9A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 2.9A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
SI3865CDV-T1-E3 |
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
SI3865CDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
SI3867DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 6-TSOP
Description: MOSFET P-CH 20V 3.9A 6-TSOP
Produkt ist nicht verfügbar
SI3879DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6-TSOP
Description: MOSFET P-CH 20V 5A 6-TSOP
Produkt ist nicht verfügbar
SI3879DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6-TSOP
Description: MOSFET P-CH 20V 5A 6-TSOP
Produkt ist nicht verfügbar
SI3905DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 6-TSOP
Description: MOSFET 2P-CH 8V 6-TSOP
Produkt ist nicht verfügbar
SI3905DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 6-TSOP
Description: MOSFET 2P-CH 8V 6-TSOP
Produkt ist nicht verfügbar
SI3909DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6TSOP
Description: MOSFET 2P-CH 20V 6TSOP
Produkt ist nicht verfügbar
SI3909DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6TSOP
Description: MOSFET 2P-CH 20V 6TSOP
Produkt ist nicht verfügbar
SI3911DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Produkt ist nicht verfügbar
SI3948DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6-TSOP
Description: MOSFET 2N-CH 30V 6-TSOP
Produkt ist nicht verfügbar
SI3951DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
Produkt ist nicht verfügbar
SI3981DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
SI3983DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Produkt ist nicht verfügbar
SI3993DV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Produkt ist nicht verfügbar
SI4100DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.26 EUR |
5000+ | 1.2 EUR |
12500+ | 1.14 EUR |
SI4100DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.26 EUR |
5000+ | 1.2 EUR |
SI4102DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Produkt ist nicht verfügbar
SI4104DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.6A 8-SOIC
Description: MOSFET N-CH 100V 4.6A 8-SOIC
Produkt ist nicht verfügbar
SI4114DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Produkt ist nicht verfügbar
SI4124DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.5A 8SO
Description: MOSFET N-CH 40V 20.5A 8SO
Produkt ist nicht verfügbar
SI4128DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.55 EUR |
5000+ | 0.52 EUR |
SI4128DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.55 EUR |
SI4134DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.69 EUR |
SI4134DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.69 EUR |
SI4136DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 46A 8SO
Description: MOSFET N-CH 20V 46A 8SO
Produkt ist nicht verfügbar
SI4158DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 36.5A 8SO
Description: MOSFET N-CH 20V 36.5A 8SO
Produkt ist nicht verfügbar
SI4160DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Description: MOSFET N-CH 30V 25.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Produkt ist nicht verfügbar
SI4162DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 19.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.83 EUR |
5000+ | 0.79 EUR |
12500+ | 0.73 EUR |
25000+ | 0.72 EUR |
SI4166DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V
Description: MOSFET N-CH 30V 30.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V
Produkt ist nicht verfügbar
SI4168DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.3 EUR |
SI4172DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
SI4174DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Description: MOSFET N-CH 30V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.79 EUR |
5000+ | 0.75 EUR |
12500+ | 0.7 EUR |
SI4176DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8-SOIC
Description: MOSFET N-CH 30V 12A 8-SOIC
Produkt ist nicht verfügbar
SI4186DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.16 EUR |
5000+ | 1.1 EUR |
SI4196DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 8SOIC
Description: MOSFET N-CH 20V 8A 8SOIC
Produkt ist nicht verfügbar
SI4210DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Si4214DDY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.6 EUR |
5000+ | 0.57 EUR |
Si4226DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Description: MOSFET 2N-CH 25V 8A 8SOIC
Produkt ist nicht verfügbar
SI4230DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Description: MOSFET 2N-CH 30V 8A 8SOIC
Produkt ist nicht verfügbar
SI4310BDY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.5A 14SOIC
Description: MOSFET 2N-CH 30V 7.5A 14SOIC
Produkt ist nicht verfügbar
SI4320DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Description: MOSFET N-CH 30V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Produkt ist nicht verfügbar