Die Produkte vishay siliconix

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SIHP17N60D-E3 SIHP17N60D-E3 sihp17n60d.pdf Vishay Siliconix Description: MOSFET N-CH 600V 17A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHP17
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 277.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9640GPBF IRFI9640GPBF 91169.pdf техническая информация Vishay Siliconix Description: MOSFET P-CH 200V 6.1A TO220-3
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRFIBC40GPBF IRFIBC40GPBF 91182.pdf Vishay Siliconix Description: MOSFET N-CH 600V 3.5A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
auf Bestellung 415 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 942 Stücke - Preis und Lieferfrist anzeigen
IRFP054PBF IRFP054PBF sihfp054.pdf Vishay Siliconix Description: MOSFET N-CH 60V 70A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 54A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 546 Stücke - Preis und Lieferfrist anzeigen
IRFIB5N65APBF IRFIB5N65APBF sihfib5n.pdf Vishay Siliconix Description: MOSFET N-CH 650V 5.1A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: IRFIB5
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V
Vgs (Max): ±30V
auf Bestellung 169 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
IRFP048PBF IRFP048PBF 91198.pdf Vishay Siliconix Description: MOSFET N-CH 60V 70A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24013 Stücke - Preis und Lieferfrist anzeigen
3+ 12.3 EUR
10+ 11.06 EUR
IRLR024 IRLR024 sihlr024.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPE50PBF IRFPE50PBF 91248.pdf Vishay Siliconix Description: MOSFET N-CH 800V 7.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33 Stücke - Preis und Lieferfrist anzeigen
IRFIBF30GPBF IRFIBF30GPBF 91186.pdf Vishay Siliconix Description: MOSFET N-CH 900V 1.9A TO220-3
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Base Part Number: IRFIBF30
auf Bestellung 47 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60S-E3 SIHP22N60S-E3 sihp22n60s.pdf Vishay Siliconix Description: MOSFET N-CH 600V 22A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60S-E3 SIHB22N60S-E3 sihb22n60s.pdf Vishay Siliconix Description: MOSFET N-CH 600V 22A TO263
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG25N40D-E3 SIHG25N40D-E3 sihg25n40d.pdf Vishay Siliconix Description: MOSFET N-CH 400V 25A TO247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
auf Bestellung 173 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9.59 EUR
10+ 8.61 EUR
100+ 7.05 EUR
IRF9530 IRF9530 sihf9530.pdf техническая информация Vishay Siliconix Description: MOSFET P-CH 100V 12A TO220AB
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4561 Stücke - Preis und Lieferfrist anzeigen
IRFI740GLCPBF IRFI740GLCPBF 91155.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 400V 5.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Part Status: Active
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 1064 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.09 EUR
10+ 9.05 EUR
100+ 7.42 EUR
500+ 6.31 EUR
1000+ 5.7 EUR
SIHP22N60E-E3 SIHP22N60E-E3 sihp22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP244PBF IRFP244PBF 91211.pdf Vishay Siliconix Description: MOSFET N-CH 250V 15A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFIB6N60APBF IRFIB6N60APBF sihfib6n.pdf Vishay Siliconix Description: MOSFET N-CH 600V 5.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP264PBF IRFP264PBF 91217.pdf Vishay Siliconix Description: MOSFET N-CH 250V 38A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
auf Bestellung 29 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
2+ 14.82 EUR
10+ 13.31 EUR
IRFPG40PBF IRFPG40PBF 91253.pdf Vishay Siliconix Description: MOSFET N-CH 1000V 4.3A TO247-3
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Power Dissipation (Max): 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPG50PBF IRFPG50PBF 91254.pdf Vishay Siliconix Description: MOSFET N-CH 1000V 6.1A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23 Stücke - Preis und Lieferfrist anzeigen
IRFBC40LCPBF IRFBC40LCPBF IRFBC40LC_SiHFBC40LC.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 126 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 494 Stücke - Preis und Lieferfrist anzeigen
3+ 11.52 EUR
10+ 10.34 EUR
100+ 8.47 EUR
IRFBC40ASPBF IRFBC40ASPBF sihfbc40.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.2A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 497 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.65 EUR
10+ 10.47 EUR
100+ 8.58 EUR
SIHG22N60E-E3 SIHG22N60E-E3 sihg22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
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SUP57N20-33-E3 SUP57N20-33-E3 sup57n20.pdf Vishay Siliconix Description: MOSFET N-CH 200V 57A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP260PBF IRFP260PBF 91215.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 200V 46A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
2+ 17.06 EUR
10+ 15.32 EUR
IRFPF50PBF IRFPF50PBF 91251.pdf Vishay Siliconix Description: MOSFET N-CH 900V 6.7A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP340PBF IRFP340PBF 91222.pdf Vishay Siliconix Description: MOSFET N-CH 400V 11A TO247-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Packaging: Tube
Package / Case: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFB20N50KPBF IRFB20N50KPBF irfb20n50k.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 500V 20A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHG32N50D-GE3 SIHG32N50D-GE3 sihg32n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 30A TO247AC
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 390W (Tc)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
2+ 13.65 EUR
10+ 12.25 EUR
IRFPC60LCPBF IRFPC60LCPBF 91244.pdf Vishay Siliconix Description: MOSFET N-CH 600V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP90P06-09L-E3 SUP90P06-09L-E3 sup40p10.pdf Vishay Siliconix Description: MOSFET P-CH 60V 90A TO220AB
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHP24N65E-E3 SIHP24N65E-E3 sihp24n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP75N03-04-E3 SUP75N03-04-E3 sup75n03.pdf Vishay Siliconix Description: MOSFET N-CH 30V 75A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFP17N50LPBF IRFP17N50LPBF 91205.pdf Vishay Siliconix Description: MOSFET N-CH 500V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFPC60PBF IRFPC60PBF 91245.pdf Vishay Siliconix Description: MOSFET N-CH 600V 16A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHB24N65E-GE3 SIHB24N65E-GE3 sihb24n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 24A D2PAK
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB24
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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IRFB17N50LPBF IRFB17N50LPBF irfb17n50l.pdf Vishay Siliconix Description: MOSFET N-CH 500V 16A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
2+ 15.76 EUR
10+ 14.15 EUR
100+ 11.59 EUR
SIHP33N60E-GE3 SIHP33N60E-GE3 sihp33n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 33A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 723 Stücke
Lieferzeit 21-28 Tag (e)
2+ 15.83 EUR
10+ 14.24 EUR
100+ 11.66 EUR
500+ 9.93 EUR
SIHF30N60E-E3 SIHF30N60E-E3 sihf30n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 29A TO220
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Power - Max: 37W
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
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Lieferzeit 21-28 Tag (e)
SIHB33N60E-GE3 SIHB33N60E-GE3 sihb33n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 33A D2PAK
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Bulk
Manufacturer: Vishay Siliconix
Base Part Number: SIHB33
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
auf Bestellung 11294 Stücke
Lieferzeit 21-28 Tag (e)
IRFP31N50LPBF IRFP31N50LPBF sihfp31n.pdf Vishay Siliconix Description: MOSFET N-CH 500V 31A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG30N60E-E3 SIHG30N60E-E3 sihg30n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 29A TO247AC
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPC50PBF IRFPC50PBF 91243.pdf Vishay Siliconix Description: MOSFET N-CH 600V 11A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP350LCPBF IRFP350LCPBF 91224.pdf Vishay Siliconix Description: MOSFET N-CH 400V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 297 Stücke
Lieferzeit 21-28 Tag (e)
2+ 17 EUR
10+ 15.38 EUR
100+ 12.73 EUR
IRF9540 IRF9540 91078.pdf техническая информация Vishay Siliconix Description: MOSFET P-CH 100V 19A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFBC30A IRFBC30A 91108.pdf Vishay Siliconix Description: MOSFET N-CH 600V 3.6A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP85N10-10-E3 SUP85N10-10-E3 SUP,SUB85N10-10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 85A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP21N60LPBF IRFP21N60LPBF sihfp21n.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 370 Stücke - Preis und Lieferfrist anzeigen
2+ 19.4 EUR
IRFP27N60KPBF IRFP27N60KPBF 91219.pdf Vishay Siliconix Description: MOSFET N-CH 600V 27A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5875 Stücke
Lieferzeit 21-28 Tag (e)
2+ 25.69 EUR
10+ 23.22 EUR
100+ 19.22 EUR
500+ 16.74 EUR
1000+ 16.2 EUR
IRFPS37N50APBF IRFPS37N50APBF SUPER247_Package.jpg Vishay Siliconix Description: MOSFET N-CH 500V 36A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 625 Stücke - Preis und Lieferfrist anzeigen
IRFP22N60KPBF IRFP22N60KPBF sihfp22n.pdf Vishay Siliconix Description: MOSFET N-CH 600V 22A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
SUP75P05-08-E3 SUP75P05-08-E3 70891.pdf Vishay Siliconix Description: MOSFET P-CH 55V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG47N60S-E3 SIHG47N60S-E3 sihg47n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 47A TO247AC
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Power - Max: 417W
Input Capacitance (Ciss) (Max) @ Vds: 6630pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70 mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 600V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 330 Stücke
Lieferzeit 21-28 Tag (e)
SIHG47N60E-E3 SIHG47N60E-E3 sihg47n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 47A TO247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
IRFP26N60LPBF IRFP26N60LPBF sihfp26n.pdf Vishay Siliconix Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11100 Stücke - Preis und Lieferfrist anzeigen
IRFPS43N50KPBF IRFPS43N50KPBF SUPER247_Package.jpg Vishay Siliconix Description: MOSFET N-CH 500V 47A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
1+ 29.48 EUR
IRFPS40N50LPBF IRFPS40N50LPBF SUPER247_Package.jpg Vishay Siliconix Description: MOSFET N-CH 500V 46A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-274AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG73N60E-GE3 SIHG73N60E-GE3 sihg73n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 73A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR420TRPBF IRFR420TRPBF sihfr420.pdf Vishay Siliconix Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2346 Stücke - Preis und Lieferfrist anzeigen
SI3430DV-T1-GE3 SI3430DV-T1-GE3 si3430dv.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.8A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3430
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 100V 1.8A 6TSOP
Base Part Number: SI3430
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1877 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 100V 1.8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3012 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
SI1411DH-T1-E3 SI1411DH-T1-E3 SI1411DH.pdf Vishay Siliconix Description: MOSFET P-CH 150V 0.42A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 208 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 si3458bd.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1621 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 6 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1621 Stücke - Preis und Lieferfrist anzeigen
SI2327DS-T1-GE3 SI2327DS-T1-GE3 73240.pdf Vishay Siliconix Description: MOSFET P-CH 200V 0.38A SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2327
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA12DP-T1-GE3 SIRA12DP-T1-GE3 SIRA12DP.pdf Vishay Siliconix Description: MOSFET N-CH 30V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 25A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 523 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 25A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 5683 Stücke
Lieferzeit 21-28 Tag (e)
SI7114ADN-T1-GE3 SI7114ADN-T1-GE3 si7114ad.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK 1212-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18533 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 2288 Stücke
Lieferzeit 21-28 Tag (e)
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IRFR210TRLPBF IRFR210TRLPBF sihfr210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.6A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 200V 2.6A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
9+ 3.04 EUR
10+ 2.72 EUR
100+ 2.12 EUR
SI4102DY-T1-GE3 SI4102DY-T1-GE3 si4102dy.pdf Vishay Siliconix Description: MOSFET N-CH 100V 3.8A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 3.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 3.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
SI7119DN-T1-E3 SI7119DN-T1-E3 si7119dn.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.8A 1212-8
Base Part Number: SI7119
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 200V 3.8A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7119
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 200V 3.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET P-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
SI4409DY-T1-GE3 SI4409DY-T1-GE3 si4409dy.pdf Vishay Siliconix Description: MOSFET P-CH 150V 1.3A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 sia421dj.pdf Vishay Siliconix Description: MOSFET P-CH 30V 12A PPAK SC70-6
Base Part Number: SIA421
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 30V 12A PPAK SC70-6
Base Part Number: SIA421
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
auf Bestellung 28631 Stücke - Preis und Lieferfrist anzeigen
SIS407DN-T1-GE3 SIS407DN-T1-GE3 sis407dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 25A PPAK1212-8
Base Part Number: SIS407
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 93.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET P-CH 20V 25A PPAK1212-8
Base Part Number: SIS407
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 93.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SI5433BDC-T1-GE3 SI5433BDC-T1-GE3 73208.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.8A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2337DS-T1-GE3 SI2337DS-T1-GE3 si2337ds.pdf Vishay Siliconix Description: MOSFET P-CH 80V 2.2A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 80V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2337
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET P-CH 80V 2.2A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2337
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
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SI8424CDB-T1-E1 SI8424CDB-T1-E1 si8424cdb.pdf Vishay Siliconix Description: MOSFET N-CH 8V 4MICROFOOT
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7309DN-T1-E3 SI7309DN-T1-E3 73434.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
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Vishay Siliconix Description: MOSFET P-CH 60V 8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 4996 Stücke
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SIHP17N60D-E3 sihp17n60d.pdf
SIHP17N60D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 17A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHP17
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 277.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9640GPBF техническая информация 91169.pdf
IRFI9640GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.1A TO220-3
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFIBC40GPBF 91182.pdf
IRFIBC40GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.5A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
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IRFP054PBF sihfp054.pdf
IRFP054PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 70A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 54A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 546 Stücke - Preis und Lieferfrist anzeigen
IRFIB5N65APBF sihfib5n.pdf
IRFIB5N65APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 5.1A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: IRFIB5
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1417pF @ 25V
Vgs (Max): ±30V
auf Bestellung 169 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
IRFP048PBF 91198.pdf
IRFP048PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 70A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24013 Stücke - Preis und Lieferfrist anzeigen
3+ 12.3 EUR
10+ 11.06 EUR
IRLR024 sihlr024.pdf
IRLR024
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPE50PBF 91248.pdf
IRFPE50PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33 Stücke - Preis und Lieferfrist anzeigen
IRFIBF30GPBF 91186.pdf
IRFIBF30GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.9A TO220-3
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Base Part Number: IRFIBF30
auf Bestellung 47 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60S-E3 sihp22n60s.pdf
SIHP22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60S-E3 sihb22n60s.pdf
SIHB22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO263
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG25N40D-E3 sihg25n40d.pdf
SIHG25N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
auf Bestellung 173 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9.59 EUR
10+ 8.61 EUR
100+ 7.05 EUR
IRF9530 техническая информация sihf9530.pdf
IRF9530
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A TO220AB
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4561 Stücke - Preis und Lieferfrist anzeigen
IRFI740GLCPBF техническая информация 91155.pdf
IRFI740GLCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Part Status: Active
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 1064 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.09 EUR
10+ 9.05 EUR
100+ 7.42 EUR
500+ 6.31 EUR
1000+ 5.7 EUR
SIHP22N60E-E3 sihp22n60e.pdf
SIHP22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP244PBF 91211.pdf
IRFP244PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 15A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP264PBF 91217.pdf
IRFP264PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 38A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
auf Bestellung 29 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
2+ 14.82 EUR
10+ 13.31 EUR
IRFPG40PBF 91253.pdf
IRFPG40PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 4.3A TO247-3
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Power Dissipation (Max): 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPG50PBF 91254.pdf
IRFPG50PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 6.1A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23 Stücke - Preis und Lieferfrist anzeigen
IRFBC40LCPBF IRFBC40LC_SiHFBC40LC.pdf
IRFBC40LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 126 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 494 Stücke - Preis und Lieferfrist anzeigen
3+ 11.52 EUR
10+ 10.34 EUR
100+ 8.47 EUR
IRFBC40ASPBF sihfbc40.pdf
IRFBC40ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 497 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.65 EUR
10+ 10.47 EUR
100+ 8.58 EUR
SIHG22N60E-E3 sihg22n60e.pdf
SIHG22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 500 Stücke - Preis und Lieferfrist anzeigen
SUP57N20-33-E3 sup57n20.pdf
SUP57N20-33-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 57A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP260PBF техническая информация 91215.pdf
IRFP260PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 46A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
2+ 17.06 EUR
10+ 15.32 EUR
IRFPF50PBF 91251.pdf
IRFPF50PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 6.7A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP340PBF 91222.pdf
IRFP340PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 11A TO247-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Packaging: Tube
Package / Case: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFB20N50KPBF техническая информация irfb20n50k.pdf
IRFB20N50KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
SIHG32N50D-GE3 sihg32n50d.pdf
SIHG32N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 30A TO247AC
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 390W (Tc)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.65 EUR
10+ 12.25 EUR
IRFPC60LCPBF 91244.pdf
IRFPC60LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP90P06-09L-E3 sup40p10.pdf
SUP90P06-09L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 90A TO220AB
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
SIHP24N65E-E3 sihp24n65e.pdf
SIHP24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP75N03-04-E3 sup75n03.pdf
SUP75N03-04-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 75A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
IRFP17N50LPBF 91205.pdf
IRFP17N50LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
IRFPC60PBF 91245.pdf
IRFPC60PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
SIHB24N65E-GE3 sihb24n65e.pdf
SIHB24N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB24
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 990 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1970 Stücke - Preis und Lieferfrist anzeigen
IRFB17N50LPBF irfb17n50l.pdf
IRFB17N50LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
2+ 15.76 EUR
10+ 14.15 EUR
100+ 11.59 EUR
SIHP33N60E-GE3 sihp33n60e.pdf
SIHP33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 723 Stücke
Lieferzeit 21-28 Tag (e)
2+ 15.83 EUR
10+ 14.24 EUR
100+ 11.66 EUR
500+ 9.93 EUR
SIHF30N60E-E3 sihf30n60e.pdf
SIHF30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Power - Max: 37W
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 496 Stücke
Lieferzeit 21-28 Tag (e)
SIHB33N60E-GE3 sihb33n60e.pdf
SIHB33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A D2PAK
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Bulk
Manufacturer: Vishay Siliconix
Base Part Number: SIHB33
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
auf Bestellung 11294 Stücke
Lieferzeit 21-28 Tag (e)
IRFP31N50LPBF sihfp31n.pdf
IRFP31N50LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 31A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG30N60E-E3 sihg30n60e.pdf
SIHG30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFPC50PBF 91243.pdf
IRFPC50PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP350LCPBF 91224.pdf
IRFP350LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 16A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 297 Stücke
Lieferzeit 21-28 Tag (e)
2+ 17 EUR
10+ 15.38 EUR
100+ 12.73 EUR
IRF9540 техническая информация 91078.pdf
IRF9540
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22980 Stücke - Preis und Lieferfrist anzeigen
IRFBC30A 91108.pdf
IRFBC30A
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP85N10-10-E3 SUP,SUB85N10-10.pdf
SUP85N10-10-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP21N60LPBF sihfp21n.pdf
IRFP21N60LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 370 Stücke - Preis und Lieferfrist anzeigen
2+ 19.4 EUR
IRFP27N60KPBF 91219.pdf
IRFP27N60KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 27A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5875 Stücke
Lieferzeit 21-28 Tag (e)
2+ 25.69 EUR
10+ 23.22 EUR
100+ 19.22 EUR
500+ 16.74 EUR
1000+ 16.2 EUR
IRFPS37N50APBF SUPER247_Package.jpg
IRFPS37N50APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 36A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 625 Stücke - Preis und Lieferfrist anzeigen
IRFP22N60KPBF sihfp22n.pdf
IRFP22N60KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 25 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
SUP75P05-08-E3 70891.pdf
SUP75P05-08-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 55V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG47N60S-E3 sihg47n6.pdf
SIHG47N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Power - Max: 417W
Input Capacitance (Ciss) (Max) @ Vds: 6630pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70 mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 600V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 330 Stücke
Lieferzeit 21-28 Tag (e)
SIHG47N60E-E3 sihg47n60e.pdf
SIHG47N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
IRFP26N60LPBF sihfp26n.pdf
IRFP26N60LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11100 Stücke - Preis und Lieferfrist anzeigen
IRFPS43N50KPBF SUPER247_Package.jpg
IRFPS43N50KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 47A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
1+ 29.48 EUR
IRFPS40N50LPBF SUPER247_Package.jpg
IRFPS40N50LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 46A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-274AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG73N60E-GE3 sihg73n60e.pdf
SIHG73N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 73A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR420TRPBF sihfr420.pdf
IRFR420TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2346 Stücke - Preis und Lieferfrist anzeigen
SI3430DV-T1-GE3 si3430dv.pdf
SI3430DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3430
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 34889 Stücke - Preis und Lieferfrist anzeigen
SI3430DV-T1-GE3 si3430dv.pdf
SI3430DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP
Base Part Number: SI3430
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1877 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33012 Stücke - Preis und Lieferfrist anzeigen
SI3430DV-T1-GE3 si3430dv.pdf
SI3430DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3012 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 31877 Stücke - Preis und Lieferfrist anzeigen
SI1411DH-T1-E3 SI1411DH.pdf
SI1411DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 0.42A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 208 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-GE3 si3458bd.pdf
SI3458BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1627 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-GE3 si3458bd.pdf
SI3458BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 6 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1621 Stücke - Preis und Lieferfrist anzeigen
SI2327DS-T1-GE3 73240.pdf
SI2327DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 0.38A SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2327
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA12DP-T1-GE3 SIRA12DP.pdf
SIRA12DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6206 Stücke - Preis und Lieferfrist anzeigen
SIRA12DP-T1-GE3 SIRA12DP.pdf
SIRA12DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Power Dissipation (Max): 4.5W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 523 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5683 Stücke - Preis und Lieferfrist anzeigen
SIRA12DP-T1-GE3 sira12dp.pdf
SIRA12DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 5683 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 523 Stücke - Preis und Lieferfrist anzeigen
SI7114ADN-T1-GE3 si7114ad.pdf
SI7114ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20821 Stücke - Preis und Lieferfrist anzeigen
SI7114ADN-T1-GE3 si7114ad.pdf
SI7114ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 2288 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18533 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRLPBF sihfr210.pdf
IRFR210TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 136 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRLPBF sihfr210.pdf
IRFR210TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
9+ 3.04 EUR
10+ 2.72 EUR
100+ 2.12 EUR
SI4102DY-T1-GE3 si4102dy.pdf
SI4102DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5238 Stücke - Preis und Lieferfrist anzeigen
SI4102DY-T1-GE3 si4102dy.pdf
SI4102DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2619 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2619 Stücke - Preis und Lieferfrist anzeigen
SI4102DY-T1-GE3 si4102dy.pdf
SI4102DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2619 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2619 Stücke - Preis und Lieferfrist anzeigen
SI7119DN-T1-E3 si7119dn.pdf
SI7119DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A 1212-8
Base Part Number: SI7119
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14021 Stücke - Preis und Lieferfrist anzeigen
SI7119DN-T1-E3 si7119dn.pdf
SI7119DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7119
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Vgs (Max): ±20V
auf Bestellung 1468 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12553 Stücke - Preis und Lieferfrist anzeigen
SI7119DN-T1-E3 si7119dn.pdf
SI7119DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 12553 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1468 Stücke - Preis und Lieferfrist anzeigen
SI4409DY-T1-GE3 si4409dy.pdf
SI4409DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.3A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA421DJ-T1-GE3 sia421dj.pdf
SIA421DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Base Part Number: SIA421
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34636 Stücke - Preis und Lieferfrist anzeigen
SIA421DJ-T1-GE3 sia421dj.pdf
SIA421DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Base Part Number: SIA421
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: Out of Bounds
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 6005 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34631 Stücke - Preis und Lieferfrist anzeigen
SIS407DN-T1-GE3 sis407dn.pdf
SIS407DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 25A PPAK1212-8
Base Part Number: SIS407
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 93.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 901 Stücke - Preis und Lieferfrist anzeigen
SIS407DN-T1-GE3 sis407dn.pdf
SIS407DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 25A PPAK1212-8
Base Part Number: SIS407
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 93.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 687 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 214 Stücke - Preis und Lieferfrist anzeigen
SI5433BDC-T1-GE3 73208.pdf
SI5433BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.8A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2337DS-T1-GE3 si2337ds.pdf
SI2337DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 80V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2337
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3650 Stücke - Preis und Lieferfrist anzeigen
SI2337DS-T1-GE3 si2337ds.pdf
SI2337DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2337
auf Bestellung 981 Stücke
Lieferzeit 21-28 Tag (e)
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SI2337DS-T1-GE3 si2337ds.pdf
SI2337DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2459 Stücke
Lieferzeit 21-28 Tag (e)
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SI8424CDB-T1-E1 si8424cdb.pdf
SI8424CDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI7309DN-T1-E3 73434.pdf
SI7309DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10269 Stücke - Preis und Lieferfrist anzeigen
SI7309DN-T1-E3 73434.pdf
SI7309DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 4996 Stücke
Lieferzeit 21-28 Tag (e)
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