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Si4226DY-T1-E3 Si4226DY-T1-E3 Vishay Siliconix si4226dy.pdf Description: MOSFET 2N-CH 25V 8A 8SOIC
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SI4230DY-T1-GE3 SI4230DY-T1-GE3 Vishay Siliconix si4230dy.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
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SI4310BDY-T1-E3 SI4310BDY-T1-E3 Vishay Siliconix si4310bd.pdf Description: MOSFET 2N-CH 30V 7.5A 14SOIC
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SI4320DY-T1-E3 SI4320DY-T1-E3 Vishay Siliconix si4320dy.pdf Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4320DY-T1-GE3 SI4320DY-T1-GE3 Vishay Siliconix si4320dy.pdf Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4322DY-T1-GE3 SI4322DY-T1-GE3 Vishay Siliconix 73860.pdf Description: MOSFET N-CH 30V 18A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4324DY-T1-E3 SI4324DY-T1-E3 Vishay Siliconix 73340.pdf Description: MOSFET N-CH 30V 36A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI4324DY-T1-GE3 SI4324DY-T1-GE3 Vishay Siliconix 73340.pdf Description: MOSFET N-CH 30V 36A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4330DY-T1-GE3 SI4330DY-T1-GE3 Vishay Siliconix si4330dy.pdf Description: MOSFET 2N-CH 30V 6.6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4346DY-T1-GE3 SI4346DY-T1-GE3 Vishay Siliconix si4346dy.pdf Description: MOSFET N-CH 30V 5.9A 8SO
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SI4354DY-T1-E3 SI4354DY-T1-E3 Vishay Siliconix si4354dy.pdf Description: MOSFET N-CH 30V 9.5A 8-SOIC
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SI4354DY-T1-GE3 SI4354DY-T1-GE3 Vishay Siliconix si4354dy.pdf Description: MOSFET N-CH 30V 9.5A 8-SOIC
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SI4362BDY-T1-E3 SI4362BDY-T1-E3 Vishay Siliconix 73539.pdf Description: MOSFET N-CH 30V 29A 8-SOIC
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SI4362BDY-T1-GE3 SI4362BDY-T1-GE3 Vishay Siliconix 73539.pdf Description: MOSFET N-CH 30V 29A 8-SOIC
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SI4368DY-T1-GE3 SI4368DY-T1-GE3 Vishay Siliconix si4368dy.pdf Description: MOSFET N-CH 30V 17A 8-SOIC
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SI4384DY-T1-GE3 SI4384DY-T1-GE3 Vishay Siliconix si4384dy.pdf Description: MOSFET N-CH 30V 10A 8-SOIC
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SI4388DY-T1-GE3 SI4388DY-T1-GE3 Vishay Siliconix si4388dy.pdf Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
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SI4390DY-T1-E3 SI4390DY-T1-E3 Vishay Siliconix si4390dy.pdf Description: MOSFET N-CH 30V 8.5A 8SOIC
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SI4390DY-T1-GE3 SI4390DY-T1-GE3 Vishay Siliconix si4390dy.pdf Description: MOSFET N-CH 30V 8.5A 8SOIC
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SI4401DY-T1-E3 SI4401DY-T1-E3 Vishay Siliconix Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4401DY-T1-GE3 SI4401DY-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 40V 8.7A 8SO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
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SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix si4404dy.pdf Description: MOSFET N-CH 30V 15A 8-SOIC
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SI4404DY-T1-GE3 SI4404DY-T1-GE3 Vishay Siliconix si4404dy.pdf Description: MOSFET N-CH 30V 15A 8-SOIC
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SI4406DY-T1-E3 SI4406DY-T1-E3 Vishay Siliconix si4406dy.pdf Description: MOSFET N-CH 30V 13A 8SO
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SI4406DY-T1-GE3 SI4406DY-T1-GE3 Vishay Siliconix si4406dy.pdf Description: MOSFET N-CH 30V 13A 8SO
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SI4408DY-T1-GE3 SI4408DY-T1-GE3 Vishay Siliconix 70687.pdf Description: MOSFET N-CH 20V 14A 8-SOIC
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SI4409DY-T1-E3 SI4409DY-T1-E3 Vishay Siliconix si4409dy.pdf Description: MOSFET P-CH 150V 1.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4410BDY-T1-E3 SI4410BDY-T1-E3 Vishay Siliconix doc?72211 Description: MOSFET N-CH 30V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
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SI4411DY-T1-E3 SI4411DY-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 9A 8SO
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4411DY-T1-GE3 SI4411DY-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 9A 8SO
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Si4412ADY-T1-E3 Si4412ADY-T1-E3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
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SI4412ADY-T1-GE3 SI4412ADY-T1-GE3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
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SI4413ADY-T1-GE3 SI4413ADY-T1-GE3 Vishay Siliconix si4413ad.pdf Description: MOSFET P-CH 30V 10.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4421DY-T1-GE3 SI4421DY-T1-GE3 Vishay Siliconix si4421dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4423DY-T1-GE3 SI4423DY-T1-GE3 Vishay Siliconix si4423dy.pdf Description: MOSFET P-CH 20V 10A 8-SOIC
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SI4425BDY-T1-GE3 SI4425BDY-T1-GE3 Vishay Siliconix si4425bd.pdf Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 Vishay Siliconix si4425ddy.pdf Description: MOSFET P-CH 30V 19.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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SI4426DY-T1-GE3 SI4426DY-T1-GE3 Vishay Siliconix si4426dy.pdf Description: MOSFET N-CH 20V 6.5A 8SO
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SI4427BDY-T1-GE3 SI4427BDY-T1-GE3 Vishay Siliconix si4427bd.pdf Description: MOSFET P-CH 30V 9.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4431CDY-T1-E3 SI4431CDY-T1-E3 Vishay Siliconix si4431cd.pdf Description: MOSFET P-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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SI4435DDY-T1-E3 SI4435DDY-T1-E3 Vishay Siliconix si4435ddy.pdf Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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SI4438DY-T1-E3 SI4438DY-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 36A 8SO
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
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SI4438DY-T1-GE3 SI4438DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 36A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4442DY-T1-GE3 SI4442DY-T1-GE3 Vishay Siliconix si4442dy.pdf Description: MOSFET N-CH 30V 15A 8SO
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SI4448DY-T1-GE3 SI4448DY-T1-GE3 Vishay Siliconix si4448dy.pdf Description: MOSFET N-CH 12V 50A 8-SOIC
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SI4451DY-T1-E3 SI4451DY-T1-E3 Vishay Siliconix 72115.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
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SI4451DY-T1-GE3 SI4451DY-T1-GE3 Vishay Siliconix 72115.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
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SI4453DY-T1-E3 SI4453DY-T1-E3 Vishay Siliconix 72175.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
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SI4453DY-T1-GE3 SI4453DY-T1-GE3 Vishay Siliconix 72175.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
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SI4456DY-T1-GE3 SI4456DY-T1-GE3 Vishay Siliconix 73852.pdf Description: MOSFET N-CH 40V 33A 8-SOIC
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SI4462DY-T1-GE3 SI4462DY-T1-GE3 Vishay Siliconix doc?72093 Description: MOSFET N-CH 200V 1.15A 8SO
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4466DY-T1-GE3 SI4466DY-T1-GE3 Vishay Siliconix doc?71820 Description: MOSFET N-CH 20V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix si4477dy.pdf Description: MOSFET P-CH 20V 26.6A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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SI4483EDY-T1-GE3 SI4483EDY-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 10A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4485DY-T1-GE3 SI4485DY-T1-GE3 Vishay Siliconix si4485dy.pdf Description: MOSFET P-CH 30V 6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4486EY-T1-GE3 SI4486EY-T1-GE3 Vishay Siliconix si4486ey.pdf Description: MOSFET N-CH 100V 5.4A 8-SOIC
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SI4493DY-T1-E3 SI4493DY-T1-E3 Vishay Siliconix 72256.pdf Description: MOSFET P-CH 20V 10A 8SOIC
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SI4493DY-T1-GE3 SI4493DY-T1-GE3 Vishay Siliconix 72256.pdf Description: MOSFET P-CH 20V 10A 8SOIC
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Si4505DY-T1-E3 Si4505DY-T1-E3 Vishay Siliconix 71826.pdf Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Drain to Source Voltage (Vdss): 30V, 8V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4505DY-T1-GE3 SI4505DY-T1-GE3 Vishay Siliconix 71826.pdf Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Drain to Source Voltage (Vdss): 30V, 8V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Si4226DY-T1-E3 si4226dy.pdf
Si4226DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Produkt ist nicht verfügbar
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SI4230DY-T1-GE3 si4230dy.pdf
SI4230DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Produkt ist nicht verfügbar
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SI4310BDY-T1-E3 si4310bd.pdf
SI4310BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.5A 14SOIC
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SI4320DY-T1-E3 si4320dy.pdf
SI4320DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4320DY-T1-GE3 si4320dy.pdf
SI4320DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4322DY-T1-GE3 73860.pdf
SI4322DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4324DY-T1-E3 73340.pdf
SI4324DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 36A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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SI4324DY-T1-GE3 73340.pdf
SI4324DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 36A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4330DY-T1-GE3 si4330dy.pdf
SI4330DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4346DY-T1-GE3 si4346dy.pdf
SI4346DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.9A 8SO
Produkt ist nicht verfügbar
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SI4354DY-T1-E3 si4354dy.pdf
SI4354DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Produkt ist nicht verfügbar
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SI4354DY-T1-GE3 si4354dy.pdf
SI4354DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Produkt ist nicht verfügbar
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SI4362BDY-T1-E3 73539.pdf
SI4362BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 29A 8-SOIC
Produkt ist nicht verfügbar
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SI4362BDY-T1-GE3 73539.pdf
SI4362BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 29A 8-SOIC
Produkt ist nicht verfügbar
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SI4368DY-T1-GE3 si4368dy.pdf
SI4368DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
Produkt ist nicht verfügbar
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SI4384DY-T1-GE3 si4384dy.pdf
SI4384DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10A 8-SOIC
Produkt ist nicht verfügbar
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SI4388DY-T1-GE3 si4388dy.pdf
SI4388DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
Produkt ist nicht verfügbar
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SI4390DY-T1-E3 si4390dy.pdf
SI4390DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.5A 8SOIC
Produkt ist nicht verfügbar
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SI4390DY-T1-GE3 si4390dy.pdf
SI4390DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.5A 8SOIC
Produkt ist nicht verfügbar
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SI4401DY-T1-E3
SI4401DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4401DY-T1-GE3
SI4401DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
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SI4404DY-T1-E3 si4404dy.pdf
SI4404DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
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SI4404DY-T1-GE3 si4404dy.pdf
SI4404DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
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SI4406DY-T1-E3 si4406dy.pdf
SI4406DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 13A 8SO
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SI4406DY-T1-GE3 si4406dy.pdf
SI4406DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 13A 8SO
Produkt ist nicht verfügbar
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SI4408DY-T1-GE3 70687.pdf
SI4408DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Produkt ist nicht verfügbar
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SI4409DY-T1-E3 si4409dy.pdf
SI4409DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4410BDY-T1-E3 doc?72211
SI4410BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar
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SI4411DY-T1-E3
SI4411DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4411DY-T1-GE3
SI4411DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Si4412ADY-T1-E3 71105.pdf
Si4412ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
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SI4412ADY-T1-GE3 71105.pdf
SI4412ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
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SI4413ADY-T1-GE3 si4413ad.pdf
SI4413ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4421DY-T1-GE3 si4421dy.pdf
SI4421DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
2500+2 EUR
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SI4423DY-T1-GE3 si4423dy.pdf
SI4423DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8-SOIC
Produkt ist nicht verfügbar
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SI4425BDY-T1-GE3 si4425bd.pdf
SI4425BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4425DDY-T1-GE3 si4425ddy.pdf
SI4425DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 97500 Stücke:
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AnzahlPrivatkunde
2500+0.51 EUR
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SI4426DY-T1-GE3 si4426dy.pdf
SI4426DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
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SI4427BDY-T1-GE3 si4427bd.pdf
SI4427BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4431CDY-T1-E3 si4431cd.pdf
SI4431CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.79 EUR
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SI4435DDY-T1-E3 si4435ddy.pdf
SI4435DDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.57 EUR
5000+0.52 EUR
7500+0.5 EUR
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SI4438DY-T1-E3
SI4438DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 36A 8SO
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4438DY-T1-GE3
SI4438DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 36A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4442DY-T1-GE3 si4442dy.pdf
SI4442DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SO
Produkt ist nicht verfügbar
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SI4448DY-T1-GE3 si4448dy.pdf
SI4448DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 50A 8-SOIC
Produkt ist nicht verfügbar
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SI4451DY-T1-E3 72115.pdf
SI4451DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
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SI4451DY-T1-GE3 72115.pdf
SI4451DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
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SI4453DY-T1-E3 72175.pdf
SI4453DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
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SI4453DY-T1-GE3 72175.pdf
SI4453DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
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SI4456DY-T1-GE3 73852.pdf
SI4456DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 33A 8-SOIC
Produkt ist nicht verfügbar
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SI4462DY-T1-GE3 doc?72093
SI4462DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.15A 8SO
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4466DY-T1-GE3 doc?71820
SI4466DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4477DY-T1-GE3 si4477dy.pdf
SI4477DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 26.6A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.01 EUR
Mindestbestellmenge: 2500 Stücke
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SI4483EDY-T1-GE3
SI4483EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4485DY-T1-GE3 si4485dy.pdf
SI4485DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.43 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4486EY-T1-GE3 si4486ey.pdf
SI4486EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SI4493DY-T1-E3 72256.pdf
SI4493DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4493DY-T1-GE3 72256.pdf
SI4493DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Si4505DY-T1-E3 71826.pdf
Si4505DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Drain to Source Voltage (Vdss): 30V, 8V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4505DY-T1-GE3 71826.pdf
SI4505DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Drain to Source Voltage (Vdss): 30V, 8V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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