Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SIB419DK-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 9A SC75-6 Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13.1W Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1080 Stücke - Preis und Lieferfrist anzeigen
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SIB800EDK-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 1.5A SC75-6 Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L Mounting Type: Surface Mount Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET N-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
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SIR888DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 5065pF @ 15V Power Dissipation (Max): 5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI4170DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 30A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6W Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Supplier Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4688DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8.9A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1065X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 1.18A SC89-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4825DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 8.1A 8SO Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5447DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.5A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6459BDQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 2.2A 8-TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drain to Source Voltage (Vdss): 60V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIHF18N50C-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 18A TO220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 38W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Supplier Device Package: TO-220-3 Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRF9640STRRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 200V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 600 Stücke Lieferzeit 21-28 Tag (e) |
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SQJ504EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N/P CHAN 40V POWERPAK SO- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: N and P-Channel Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRF9640STRLPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
auf Bestellung 1441 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 520 Stücke - Preis und Lieferfrist anzeigen
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IRF9640PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 11A TO220AB Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Package / Case: TO-220-3 Packaging: Tube Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
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SI2303BDS-T1 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 1.49A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 38178 Stücke - Preis und Lieferfrist anzeigen
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SI2343DS-T1 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A SOT23-3 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2302ADS-T1 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 2.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.2V @ 50µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 429756 Stücke - Preis und Lieferfrist anzeigen
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SI2323DS-T1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13660 Stücke - Preis und Lieferfrist anzeigen
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TP0610K-T1 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 185MA SOT23-3 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21504 Stücke - Preis und Lieferfrist anzeigen
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DG2517EDN-T1-GE4 |
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Vishay Siliconix |
Description: IC SWITCH DUAL SPDT 10DFN Number of Circuits: 2 Part Status: Active Switch Time (Ton, Toff) (Max): 40ns, 33ns Channel-to-Channel Matching (ΔRon): 10mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -62dB @ 1MHz Charge Injection: -19.4pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 10-DFN (3x3) -3db Bandwidth: 221MHz On-State Resistance (Max): 3.1Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2469 Stücke Lieferzeit 21-28 Tag (e) |
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SI4470EY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 9A 8SO Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Power Dissipation (Max): 1.85W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4484EY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 4.8A 8-SOIC Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 1.8W (Ta) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6443DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 7.3A 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.05W Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V Supplier Device Package: 8-TSSOP FET Type: MOSFET P-Channel, Metal Oxide Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drain to Source Voltage (Vdss): 30V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SI8451DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 10.8A MICROFOOT Supplier Device Package: 6-Micro Foot™ (1.5x1) Package / Case: 6-MICRO FOOT™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13W Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SI1058X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V SC89 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 5V Vgs(th) (Max) @ Id: 1.55V @ 250µA Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1031X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 0.155A SC-75A Power - Max: 300mW Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 155mA (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-75A Package / Case: SC-75A Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 766018 Stücke - Preis und Lieferfrist anzeigen
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SI1037X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 0.77A SC89 Supplier Device Package: SC-89 (SOT-563F) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 170mW Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 123 Stücke - Preis und Lieferfrist anzeigen
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SI1037X-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 0.77A SC89 Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V Supplier Device Package: SC-89 (SOT-563F) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 170mW Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1046R-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 0.606A SC75-3 Supplier Device Package: SC-75A Vgs(th) (Max) @ Id: 950mV @ 250µA Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V Package / Case: SC-75A Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1051X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 1.2A SC89-6 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V Drain to Source Voltage (Vdss): 8V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1054X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 1.32A SC89-6 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 12V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1069X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 0.94A SC89-6 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 6.86nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 184 mOhm @ 940mA, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1073X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 0.98A SC89-6 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 10V Rds On (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1305EDL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 0.86A SOT323-3 Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 290mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1402DH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 2.7A SOT363 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 950mW Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1402DH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 2.7A SOT363 Power - Max: 950mW Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1405BDH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 1.6A SC70-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1413DH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.3A SC-70-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 100µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 688 Stücke - Preis und Lieferfrist anzeigen
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SI1413DH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.3A SC-70-6 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 100µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1450DH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 4.53A SC70-6 Drain to Source Voltage (Vdss): 8V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.78W Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2302ADS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 2.1A SOT23-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.2V @ 50µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5400 Stücke - Preis und Lieferfrist anzeigen
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SI2311DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 3A SOT23 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 710mW Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Package / Case: TO-236-3, SC-59, SOT-23-3 Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 92200 Stücke - Preis und Lieferfrist anzeigen
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SI2311DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 3A SOT23 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 710mW Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2321DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.9A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 710mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 57mOhm @ 3.3A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2321DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.9A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 710mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 57mOhm @ 3.3A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2331DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 3.2A SOT23-3 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 710mW Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 42000 Stücke - Preis und Lieferfrist anzeigen
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SI2331DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 3.2A SOT23-3 Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 710mW Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2341DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A SOT-23 Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drain to Source Voltage (Vdss): 30V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 710mW Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
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SI2341DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A SOT-23 Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Power - Max: 710mW Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI3407DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3407 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3410DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.1W Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3424BDV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8A 6TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: 6-TSOP Power - Max: 2.98W Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3451DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.8A 6-TSOP Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.1W Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI3456BDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A 6-TSOP Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI3456CDV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 7.7A 6TSOP Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5750 Stücke - Preis und Lieferfrist anzeigen
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SI3456CDV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 7.7A 6TSOP Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI3879DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5A 6-TSOP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SI3879DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5A 6-TSOP Power - Max: 3.3W Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4102DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.8W Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide |
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auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
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SI4104DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 4.6A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
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SI4196DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 8SOIC Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.6W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 8V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4322DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 18A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 30V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.4W Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4354DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 9.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.5W Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 92350 Stücke - Preis und Lieferfrist anzeigen
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SI4354DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 9.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.5W FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4362BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 29A 8-SOIC Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 6.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 81200 Stücke - Preis und Lieferfrist anzeigen
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SI4362BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 29A 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 6.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4411DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 9A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4411 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90051 Stücke - Preis und Lieferfrist anzeigen
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SI4411DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 9A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4411 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4453DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 10A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: 8-SO Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 165nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 600µA Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 135000 Stücke - Preis und Lieferfrist anzeigen
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SI4453DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 10A 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Gate Charge (Qg) (Max) @ Vgs: 165nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 600µA Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4486EY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 5.4A 8-SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4493DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 8SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 20V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 178652 Stücke - Preis und Lieferfrist anzeigen
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SI4493DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 8SOIC Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI4660DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 23.1A 8-SOIC Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.6W Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150300 Stücke - Preis und Lieferfrist anzeigen
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SI4682DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 16A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 77075 Stücke - Preis und Lieferfrist anzeigen
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SI4682DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 16A 8-SOIC FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI4684DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 16A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 159500 Stücke - Preis und Lieferfrist anzeigen
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SI4684DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 16A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.45W Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SI4688DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8.9A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 112500 Stücke - Preis und Lieferfrist anzeigen
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SI4831BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 6.6A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drain to Source Voltage (Vdss): 30V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 65000 Stücke - Preis und Lieferfrist anzeigen
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| SIB419DK-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13.1W
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 9A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13.1W
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
auf Bestellung 1080 Stücke - Preis und Lieferfrist anzeigen
| SIB800EDK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.5A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 1.5A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
| SIR888DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 5065pF @ 15V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 5065pF @ 15V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SI4170DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6W
Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 30A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6W
Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
| SI4688DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8.9A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| SI1065X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SC89-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 1.18A SC89-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V
| SI4825DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.1A 8SO
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 8.1A 8SO
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| SI5447DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.5A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.5A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI6459BDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 2.2A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
| SIHF18N50C-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 38W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 18A TO220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 38W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
| IRF9640STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 600 Stücke Description: MOSFET P-CH 200V 11A D2PAK
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
| SQJ504EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V POWERPAK SO-
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P CHAN 40V POWERPAK SO-
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
| IRF9640STRLPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
auf Bestellung 1441 Stücke Description: MOSFET P-CH 200V 11A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 520 Stücke - Preis und Lieferfrist anzeigen
| IRF9640PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 11A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Vgs (Max): ±20V
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
| SI2303BDS-T1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
auf Bestellung 38178 Stücke - Preis und Lieferfrist anzeigen
| SI2343DS-T1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
| SI2302ADS-T1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 429756 Stücke - Preis und Lieferfrist anzeigen
| SI2323DS-T1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
auf Bestellung 13660 Stücke - Preis und Lieferfrist anzeigen
| TP0610K-T1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 21504 Stücke - Preis und Lieferfrist anzeigen
| DG2517EDN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10DFN
Number of Circuits: 2
Part Status: Active
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2469 Stücke Description: IC SWITCH DUAL SPDT 10DFN
Number of Circuits: 2
Part Status: Active
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SI4470EY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9A 8SO
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.85W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 9A 8SO
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.85W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| SI4484EY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.8A 8-SOIC
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 4.8A 8-SOIC
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
| SI6443DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.3A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Supplier Device Package: 8-TSSOP
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 7.3A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Supplier Device Package: 8-TSSOP
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
| SI8451DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.8A MICROFOOT
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 10.8A MICROFOOT
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI1058X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 5V
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V SC89
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 5V
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
| SI1031X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.155A SC-75A
Power - Max: 300mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-75A
Package / Case: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 0.155A SC-75A
Power - Max: 300mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-75A
Package / Case: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 766018 Stücke - Preis und Lieferfrist anzeigen
| SI1037X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.77A SC89
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 0.77A SC89
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 123 Stücke - Preis und Lieferfrist anzeigen
| SI1037X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.77A SC89
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 0.77A SC89
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 195 mOhm @ 770mA, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI1046R-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC75-3
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
Package / Case: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 0.606A SC75-3
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
Package / Case: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
| SI1051X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.2A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
Drain to Source Voltage (Vdss): 8V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 1.2A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
Drain to Source Voltage (Vdss): 8V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
| SI1054X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 1.32A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 1.32A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
| SI1069X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.94A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.86nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 184 mOhm @ 940mA, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 0.94A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.86nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 184 mOhm @ 940mA, 4.5V
| SI1073X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.98A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 10V
Rds On (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 0.98A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 10V
Rds On (Max) @ Id, Vgs: 173 mOhm @ 980mA, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
| SI1305EDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 0.86A SOT323-3
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
| SI1402DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.7A SOT363
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 950mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 2.7A SOT363
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 950mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SI1402DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.7A SOT363
Power - Max: 950mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 2.7A SOT363
Power - Max: 950mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SI1405BDH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
| SI1413DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC-70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.3A SC-70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 688 Stücke - Preis und Lieferfrist anzeigen
| SI1413DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC-70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.3A SC-70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
| SI1450DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4.53A SC70-6
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 8V 4.53A SC70-6
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
| SI2302ADS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.1A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 5400 Stücke - Preis und Lieferfrist anzeigen
| SI2311DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3A SOT23
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 3A SOT23
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 92200 Stücke - Preis und Lieferfrist anzeigen
| SI2311DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3A SOT23
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 3A SOT23
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
| SI2321DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.9A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.9A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI2321DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.9A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.9A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI2331DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 3.2A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 42000 Stücke - Preis und Lieferfrist anzeigen
| SI2331DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 3.2A SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
| SI2341DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT-23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 2.5A SOT-23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
| SI2341DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT-23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 2.5A SOT-23
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 710mW
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
| SI3407DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 8A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3407
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI3410DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.1W
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.1W
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI3424BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 6-TSOP
Power - Max: 2.98W
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 6-TSOP
Power - Max: 2.98W
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI3451DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.8A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.1W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.8A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.1W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
| SI3456BDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4.5A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI3456CDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.7A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 7.7A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 5750 Stücke - Preis und Lieferfrist anzeigen
| SI3456CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.7A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 7.7A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
| SI3879DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 5A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SI3879DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6-TSOP
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 5A 6-TSOP
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI4102DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.8W
Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
| SI4104DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 4.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
| SI4196DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 8SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.6W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 8V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 8A 8SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.6W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 8V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
| SI4322DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 18A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Type: MOSFET N-Channel, Metal Oxide
| SI4354DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 9.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 92350 Stücke - Preis und Lieferfrist anzeigen
| SI4354DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 9.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
| SI4362BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 29A 8-SOIC
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 29A 8-SOIC
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 81200 Stücke - Preis und Lieferfrist anzeigen
| SI4362BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 29A 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 29A 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
| SI4411DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4411
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 9A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4411
auf Bestellung 90051 Stücke - Preis und Lieferfrist anzeigen
| SI4411DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4411
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 9A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4411
| SI4453DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 600µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 10A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 600µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 135000 Stücke - Preis und Lieferfrist anzeigen
| SI4453DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 600µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 10A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 600µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
| SI4486EY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 5.4A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| SI4493DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 10A 8SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 178652 Stücke - Preis und Lieferfrist anzeigen
| SI4493DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SOIC
Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 10A 8SOIC
Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SI4660DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 23.1A 8-SOIC
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.6W
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 23.1A 8-SOIC
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.6W
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
auf Bestellung 150300 Stücke - Preis und Lieferfrist anzeigen
| SI4682DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 16A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 77075 Stücke - Preis und Lieferfrist anzeigen
| SI4682DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 16A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SI4684DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 16A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
auf Bestellung 159500 Stücke - Preis und Lieferfrist anzeigen
| SI4684DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 16A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.45W
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SI4688DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8.9A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 112500 Stücke - Preis und Lieferfrist anzeigen
| SI4831BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.6A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 6.6A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 65000 Stücke - Preis und Lieferfrist anzeigen
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