Die Produkte vishay siliconix
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Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SI1072X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 1.3A SOT563F Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 236mW Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3958 Stücke - Preis und Lieferfrist anzeigen
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SI1303EDL-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 670MA SC70-3 Supplier Device Package: SC-70-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 290mW (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 670mA (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Package / Case: SC-70, SOT-323 Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SI1305EDL-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 0.86A SOT323-3 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 290mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount |
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auf Bestellung 9018 Stücke - Preis und Lieferfrist anzeigen
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SI1410EDH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 2.9A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
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auf Bestellung 6268 Stücke - Preis und Lieferfrist anzeigen
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SI1450DH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 4.53A SC70-6 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.78W Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount |
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SI1472DH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 5.6A SC70-6 Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V |
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SI2302ADS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 2.1A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.2V @ 50µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
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auf Bestellung 398865 Stücke - Preis und Lieferfrist anzeigen
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SI2309DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 1.25A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16500 Stücke - Preis und Lieferfrist anzeigen
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SI3451DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.8A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.1W Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SI3456BDV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A 6-TSOP FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.1W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 131068 Stücke - Preis und Lieferfrist anzeigen
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SI3458DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 3.2A 6-TSOP Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6780 Stücke - Preis und Lieferfrist anzeigen
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SI3459DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 2.2A 6-TSOP Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 43000 Stücke - Preis und Lieferfrist anzeigen
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SI3475DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 950MA 6TSOP Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 4V @ 250µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Rds On (Max) @ Id, Vgs: 1.61Ohm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 950mA (Tc) FET Type: P-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3499DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6-TSOP Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Vgs(th) (Max) @ Id: 750mV @ 250µA Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36000 Stücke - Preis und Lieferfrist anzeigen
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SI3812DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 2A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI4322DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 18A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 30V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.4W Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75000 Stücke - Preis und Lieferfrist anzeigen
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SI4336DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 17A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.6W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 51809 Stücke - Preis und Lieferfrist anzeigen
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SI4398DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 19A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 112700 Stücke - Preis und Lieferfrist anzeigen
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DG9409EDN-T1-GE4 |
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Vishay Siliconix |
Description: IC ANLG SWITCH PREC 8CH 16QFN Package / Case: 16-VQFN Exposed Pad Packaging: Cut Tape (CT) Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 23pF, 112pF Switch Time (Ton, Toff) (Max): 70ns, 44ns Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max) Multiplexer/Demultiplexer Circuit: 4:1 Crosstalk: -85dB @ 100kHz Charge Injection: 29pC Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 16-QFN (4x4) On-State Resistance (Max): 7Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount |
auf Bestellung 7335 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Vishay Siliconix |
Description: IC ANLG SWITCH PREC 8CH 16QFN Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Packaging: Tape & Reel (TR) Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 23pF, 112pF Switch Time (Ton, Toff) (Max): 70ns, 44ns Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max) Multiplexer/Demultiplexer Circuit: 4:1 Crosstalk: -85dB @ 100kHz Charge Injection: 29pC Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 16-QFN (4x4) On-State Resistance (Max): 7Ohm Operating Temperature: -40°C ~ 85°C (TA) |
auf Bestellung 5000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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DG9431EDY-T1-GE3 |
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Vishay Siliconix |
Description: IC SWITCH SPDT LV 8SOIC Part Status: Active Number of Circuits: 1 Current - Leakage (IS(off)) (Max): 100pA Channel Capacitance (CS(off), CD(off)): 7pF Switch Time (Ton, Toff) (Max): 75ns, 50ns Channel-to-Channel Matching (ΔRon): 400mOhm Multiplexer/Demultiplexer Circuit: 1:2 Switch Circuit: SPDT Charge Injection: 2pC Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 8-SOIC On-State Resistance (Max): 30Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 16 Stücke![]() Lieferzeit 21-28 Tag (e) |
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DG9421EDV-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 6-TSOP Switch Circuit: SPST - NC Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 6-TSOP -3db Bandwidth: 161MHz On-State Resistance (Max): 3.2Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Charge Injection: 19pC Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Voltage - Supply, Dual (V±): ±3V ~ 8V Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 36ns, 22ns Channel Capacitance (CS(off), CD(off)): 34pF, 36pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 12000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 12537 Stücke - Preis und Lieferfrist anzeigen
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DG9422EDV-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 6-TSOP Charge Injection: 19pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 6-TSOP -3db Bandwidth: 161MHz On-State Resistance (Max): 3.2Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 34pF, 36pF Switch Time (Ton, Toff) (Max): 36ns, 22ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO |
auf Bestellung 3000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 5580 Stücke - Preis und Lieferfrist anzeigen
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DG9411EDL-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SC70 Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Crosstalk: -77dB @ 1MHz Channel Capacitance (CS(off), CD(off)): 7pF Charge Injection: 1pC Switch Time (Ton, Toff) (Max): 30ns, 24ns Voltage - Supply, Single (V+): 1.8V ~ 5.5V Channel-to-Channel Matching (ΔRon): 200mOhm On-State Resistance (Max): 8Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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DG9424EDN-T1-GE4 |
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Vishay Siliconix |
Description: ANALOG SWITCH QUAD SPST 16-QFN Multiplexer/Demultiplexer Circuit: 1:1 Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: 16-QFN (4x4) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Number of Circuits: 4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
Vishay Siliconix |
Description: ANALOG SWITCH QUAD SPST 16-QFN Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Part Status: Active Packaging: Cut Tape (CT) Voltage - Supply, Single (V+): 3V ~ 16V Voltage - Supply, Dual (V±): ±3V ~ 8V Switch Time (Ton, Toff) (Max): 51ns, 35ns Charge Injection: 38pC Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -77dB @ 1MHz Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Supplier Device Package: 16-QFN (4x4) |
auf Bestellung 674 Stücke![]() Lieferzeit 21-28 Tag (e) |
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DG9421EDV-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 3.2Ohm -3db Bandwidth: 161MHz Supplier Device Package: 6-TSOP Voltage - Supply, Single (V+): 3V ~ 16V Voltage - Supply, Dual (V±): ±3V ~ 8V Charge Injection: 19pC Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 36ns, 22ns Channel Capacitance (CS(off), CD(off)): 34pF, 36pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 12537 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
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SI4398DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 19A 8-SOIC Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.6W Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 112700 Stücke - Preis und Lieferfrist anzeigen
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SI4435BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 7A 8SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 115110 Stücke - Preis und Lieferfrist anzeigen
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SI4470EY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 9A 8SO Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 1.85W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10075 Stücke - Preis und Lieferfrist anzeigen
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SI4480DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 6A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Drain to Source Voltage (Vdss): 80V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.5W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 105000 Stücke - Preis und Lieferfrist anzeigen
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SI4484EY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 4.8A 8-SOIC Supplier Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.8W Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drain to Source Voltage (Vdss): 100V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 211580 Stücke - Preis und Lieferfrist anzeigen
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SI4486EY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 5.4A 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.8W Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
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SI4642DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 34A 8-SOIC Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 3V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 105100 Stücke - Preis und Lieferfrist anzeigen
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SI4825DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 8.1A 8SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87200 Stücke - Preis und Lieferfrist anzeigen
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SI4831DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 5A 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100150 Stücke - Preis und Lieferfrist anzeigen
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SI4835BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 7.4A 8SO Base Part Number: SI4835 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 31742 Stücke - Preis und Lieferfrist anzeigen
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SI4840DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 10A 8-SOIC Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.56W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59580 Stücke - Preis und Lieferfrist anzeigen
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SI4845DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc) FET Feature: Schottky Diode (Isolated) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 181638 Stücke - Preis und Lieferfrist anzeigen
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SI5406DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 6.9A 1206-8 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min) Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drain to Source Voltage (Vdss): 12V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 44000 Stücke - Preis und Lieferfrist anzeigen
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SI5447DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.5A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SI5463EDC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 1206-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drain to Source Voltage (Vdss): 20V Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI5473DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 5.9A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
SI5476DU-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: MOSFET N-Channel, Metal Oxide Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
SI1072X-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.3A SOT563F
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 1.3A SOT563F
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.3A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3958 Stücke - Preis und Lieferfrist anzeigen
SI1303EDL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: SC-70, SOT-323
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 670MA SC70-3
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: SC-70, SOT-323
Part Status: Obsolete
Packaging: Tape & Reel (TR)
SI1305EDL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 0.86A SOT323-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 290mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
auf Bestellung 9018 Stücke - Preis und Lieferfrist anzeigen
SI1410EDH-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.9A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.9A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6268 Stücke - Preis und Lieferfrist anzeigen
SI1450DH-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4.53A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 8V 4.53A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
SI1472DH-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.6A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 5.6A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
SI2302ADS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 398865 Stücke - Preis und Lieferfrist anzeigen
SI2309DS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.25A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 1.25A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
auf Bestellung 16500 Stücke - Preis und Lieferfrist anzeigen
SI3451DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.1W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.1W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
SI3456BDV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A 6-TSOP
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4.5A 6-TSOP
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 131068 Stücke - Preis und Lieferfrist anzeigen
SI3458DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 3.2A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 3.2A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 6780 Stücke - Preis und Lieferfrist anzeigen
SI3459DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 2.2A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 43000 Stücke - Preis und Lieferfrist anzeigen
SI3475DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 950MA 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.61Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 950mA (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 950MA 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.61Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 950mA (Tc)
FET Type: P-Channel
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI3499DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 5.3A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
auf Bestellung 36000 Stücke - Preis und Lieferfrist anzeigen
SI3812DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4322DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 18A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.4W
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 75000 Stücke - Preis und Lieferfrist anzeigen
SI4336DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 17A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 51809 Stücke - Preis und Lieferfrist anzeigen
SI4398DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 112700 Stücke - Preis und Lieferfrist anzeigen
DG9409EDN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH PREC 8CH 16QFN
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Crosstalk: -85dB @ 100kHz
Charge Injection: 29pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 7Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
auf Bestellung 7335 Stücke Description: IC ANLG SWITCH PREC 8CH 16QFN
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Crosstalk: -85dB @ 100kHz
Charge Injection: 29pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 7Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount

Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
DG9409EDN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH PREC 8CH 16QFN
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Crosstalk: -85dB @ 100kHz
Charge Injection: 29pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 7Ohm
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 5000 Stücke Description: IC ANLG SWITCH PREC 8CH 16QFN
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Crosstalk: -85dB @ 100kHz
Charge Injection: 29pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 7Ohm
Operating Temperature: -40°C ~ 85°C (TA)

Lieferzeit 21-28 Tag (e)
auf Bestellung 7335 Stücke - Preis und Lieferfrist anzeigen
|
DG9431EDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT LV 8SOIC
Part Status: Active
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Charge Injection: 2pC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 30Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 16 Stücke Description: IC SWITCH SPDT LV 8SOIC
Part Status: Active
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Charge Injection: 2pC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 30Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Lieferzeit 21-28 Tag (e)
|
DG9421EDV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6-TSOP
Switch Circuit: SPST - NC
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 161MHz
On-State Resistance (Max): 3.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Charge Injection: 19pC
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Voltage - Supply, Dual (V±): ±3V ~ 8V
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 12000 Stücke Description: IC ANALOG SWITCH 6-TSOP
Switch Circuit: SPST - NC
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 161MHz
On-State Resistance (Max): 3.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Charge Injection: 19pC
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Voltage - Supply, Dual (V±): ±3V ~ 8V
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1

Lieferzeit 21-28 Tag (e)
auf Bestellung 12537 Stücke - Preis und Lieferfrist anzeigen
|
DG9422EDV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6-TSOP
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 161MHz
On-State Resistance (Max): 3.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
auf Bestellung 3000 Stücke Description: IC ANALOG SWITCH 6-TSOP
Charge Injection: 19pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 161MHz
On-State Resistance (Max): 3.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO

Lieferzeit 21-28 Tag (e)
auf Bestellung 5580 Stücke - Preis und Lieferfrist anzeigen
|
DG9411EDL-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Channel Capacitance (CS(off), CD(off)): 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 200mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: IC ANALOG SWITCH SC70
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Channel Capacitance (CS(off), CD(off)): 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 200mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
DG9424EDN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: ANALOG SWITCH QUAD SPST 16-QFN
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: ANALOG SWITCH QUAD SPST 16-QFN
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Number of Circuits: 4
auf Bestellung 674 Stücke - Preis und Lieferfrist anzeigen
DG9424EDN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: ANALOG SWITCH QUAD SPST 16-QFN
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Packaging: Cut Tape (CT)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Charge Injection: 38pC
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)
auf Bestellung 674 Stücke Description: ANALOG SWITCH QUAD SPST 16-QFN
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Packaging: Cut Tape (CT)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Charge Injection: 38pC
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)

Lieferzeit 21-28 Tag (e)
DG9421EDV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3.2Ohm
-3db Bandwidth: 161MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 19pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 12537 Stücke Description: IC ANALOG SWITCH 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3.2Ohm
-3db Bandwidth: 161MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 19pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1

Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
|
SI4398DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 19A 8-SOIC
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 112700 Stücke - Preis und Lieferfrist anzeigen
SI4435BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 7A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
auf Bestellung 115110 Stücke - Preis und Lieferfrist anzeigen
SI4470EY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.85W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 9A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.85W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 10075 Stücke - Preis und Lieferfrist anzeigen
SI4480DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drain to Source Voltage (Vdss): 80V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Drain to Source Voltage (Vdss): 80V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
auf Bestellung 105000 Stücke - Preis und Lieferfrist anzeigen
SI4484EY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.8A 8-SOIC
Supplier Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 4.8A 8-SOIC
Supplier Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 211580 Stücke - Preis und Lieferfrist anzeigen
SI4486EY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 5.4A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI4642DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 34A 8-SOIC
Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 34A 8-SOIC
Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
auf Bestellung 105100 Stücke - Preis und Lieferfrist anzeigen
SI4825DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.1A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 8.1A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 87200 Stücke - Preis und Lieferfrist anzeigen
SI4831DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 5A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 100150 Stücke - Preis und Lieferfrist anzeigen
SI4835BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A 8SO
Base Part Number: SI4835
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 7.4A 8SO
Base Part Number: SI4835
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 31742 Stücke - Preis und Lieferfrist anzeigen
SI4840DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 10A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 59580 Stücke - Preis und Lieferfrist anzeigen
SI4845DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc)
FET Feature: Schottky Diode (Isolated)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.7A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc)
FET Feature: Schottky Diode (Isolated)
auf Bestellung 181638 Stücke - Preis und Lieferfrist anzeigen
SI5406DC-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 6.9A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Drain to Source Voltage (Vdss): 12V
auf Bestellung 44000 Stücke - Preis und Lieferfrist anzeigen
SI5447DC-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.5A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.5A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
SI5463EDC-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.8A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI5473DC-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 5.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
SI5476DU-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
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