Die Produkte vishay siliconix

Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]
Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
Preis
ohne MwSt
SI4831BDY-T1-GE3 SI4831BDY-T1-GE3 si4831bd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 6.6A 8-SOIC
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4840DY-T1-GE3 SI4840DY-T1-GE3 71188.pdf Vishay Siliconix Description: MOSFET N-CH 40V 10A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4850EY-T1 SI4850EY-T1 71146.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.7W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2317 Stücke - Preis und Lieferfrist anzeigen
SI5401DC-T1-GE3 SI5401DC-T1-GE3 73225.pdf Vishay Siliconix Description: MOSFET P-CH 20V 5.2A 1206-8
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5406DC-T1-GE3 SI5406DC-T1-GE3 71657.pdf Vishay Siliconix Description: MOSFET N-CH 12V 6.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5449DC-T1-E3 SI5449DC-T1-E3 71327.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.1A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI5449DC-T1-GE3 SI5449DC-T1-GE3 71327.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.1A 1206-8
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5463EDC-T1-GE3 SI5463EDC-T1-GE3 71364.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.8A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5473DC-T1-GE3 SI5473DC-T1-GE3 si5473dc.pdf Vishay Siliconix Description: MOSFET P-CH 12V 5.9A 1206-8
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5475DC-T1-E3 SI5475DC-T1-E3 si5475dc.pdf Vishay Siliconix Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
SI5475DC-T1-GE3 SI5475DC-T1-GE3 si5475dc.pdf Vishay Siliconix Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5479DU-T1-GE3 73368.pdf Vishay Siliconix Description: MOSFET P-CH 12V 16A CHIPFET
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5480DU-T1-GE3 73585.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5481DU-T1-GE3 73777.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5482DU-T1-GE3 73594.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5484DU-T1-GE3 73589.pdf Vishay Siliconix Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5485DU-T1-GE3 si5485du.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5853CDC-T1-E3 SI5853CDC-T1-E3 si5853cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9640 Stücke - Preis und Lieferfrist anzeigen
SI5857DU-T1-GE3 SI5857DU-T1-GE3 si5857du.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5858DU-T1-GE3 SI5858DU-T1-GE3 si5858du.pdf Vishay Siliconix Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6404DQ-T1-E3 SI6404DQ-T1-E3 71440.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI6404DQ-T1-GE3 SI6404DQ-T1-GE3 71440.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6413DQ-T1-E3 SI6413DQ-T1-E3 72084.pdf Vishay Siliconix Description: MOSFET P-CH 20V 7.2A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 400µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI6443DQ-T1-E3 SI6443DQ-T1-E3 72083.pdf Vishay Siliconix Description: MOSFET P-CH 30V 7.3A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6465DQ-T1-E3 SI6465DQ-T1-E3 70812.pdf Vishay Siliconix Description: MOSFET P-CH 8V 8.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90000 Stücke - Preis und Lieferfrist anzeigen
SI6465DQ-T1-GE3 SI6465DQ-T1-GE3 70812.pdf Vishay Siliconix Description: MOSFET P-CH 8V 8.8A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6473DQ-T1-E3 SI6473DQ-T1-E3 71164.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
SI6473DQ-T1-GE3 SI6473DQ-T1-GE3 71164.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7156DP-T1-E3 SI7156DP-T1-E3 si7156dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7156DP-T1-GE3 SI7156DP-T1-GE3 si7156dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7302DN-T1-GE3 SI7302DN-T1-GE3 73306.pdf Vishay Siliconix Description: MOSFET N-CH 220V 8.4A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 220V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7358ADP-T1-E3 SI7358ADP-T1-E3 73161.pdf Vishay Siliconix Description: MOSFET N-CH 30V 14A PPAK SO-8
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7358ADP-T1-GE3 SI7358ADP-T1-GE3 73161.pdf Vishay Siliconix Description: MOSFET N-CH 30V 14A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7368DP-T1-E3 SI7368DP-T1-E3 72154.pdf Vishay Siliconix Description: MOSFET N-CH 20V 13A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7368DP-T1-GE3 SI7368DP-T1-GE3 72154.pdf Vishay Siliconix Description: MOSFET N-CH 20V 13A PPAK SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7407DN-T1-E3 SI7407DN-T1-E3 si7407dn.pdf Vishay Siliconix Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7407DN-T1-GE3 SI7407DN-T1-GE3 si7407dn.pdf Vishay Siliconix Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7445DP-T1-E3 SI7445DP-T1-E3 71626.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK 1212-8
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
SI7445DP-T1-GE3 SI7445DP-T1-GE3 71626.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7446BDP-T1-E3 SI7446BDP-T1-E3 72554.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SI7446BDP-T1-GE3 SI7446BDP-T1-GE3 72554.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7452DP-T1-E3 SI7452DP-T1-E3 72972.pdf Vishay Siliconix Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
SI7452DP-T1-GE3 SI7452DP-T1-GE3 72972.pdf Vishay Siliconix Description: MOSFET N-CH 60V 11.5A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7476DP-T1-GE3 SI7476DP-T1-GE3 si7476dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 15A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7495DP-T1-E3 SI7495DP-T1-E3 72277.pdf Vishay Siliconix Description: MOSFET P-CH 12V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7495DP-T1-GE3 SI7495DP-T1-GE3 72277.pdf Vishay Siliconix Description: MOSFET P-CH 12V 13A PPAK SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7601DN-T1-E3 SI7601DN-T1-E3 si7601dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 16A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7664DP-T1-E3 SI7664DP-T1-E3 73566.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7664DP-T1-GE3 SI7664DP-T1-GE3 73566.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7674DP-T1-E3 SI7674DP-T1-E3 si7674dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7674DP-T1-GE3 SI7674DP-T1-GE3 si7674dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7682DP-T1-E3 SI7682DP-T1-E3 73350.pdf Vishay Siliconix Description: MOSFET N-CH 30V 20A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27.5W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1431 Stücke - Preis und Lieferfrist anzeigen
SI7886ADP-T1-E3 SI7886ADP-T1-E3 73156.pdf Vishay Siliconix Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15872 Stücke - Preis und Lieferfrist anzeigen
SI7886ADP-T1-GE3 SI7886ADP-T1-GE3 73156.pdf Vishay Siliconix Description: MOSFET N-CH 30V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8417DB-T2-E1 73531.pdf Vishay Siliconix Description: MOSFET P-CH 12V 14.5A 2X2 6MFP
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.57W
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE726DF-T1-E3 sie726df.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE806DF-T1-GE3 SIE806DF-T1-GE3 sie806df.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE816DF-T1-E3 SIE816DF-T1-E3 sie816df.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE816DF-T1-GE3 SIE816DF-T1-GE3 sie816df.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE830DF-T1-GE3 SIE830DF-T1-GE3 sie830df.pdf Vishay Siliconix Description: MOSFET N-CH 30V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE836DF-T1-E3 SIE836DF-T1-E3 sie836df.pdf Vishay Siliconix Description: MOSFET N-CH 200V 18.3A POLARPAK
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: 10-PolarPAK® (SH)
Package / Case: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE860DF-T1-E3 SIE860DF-T1-E3 sie860df.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 10-PolarPAK® (M)
Package / Case: 10-PolarPAK® (M)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60S-E3 SIHB22N60S-E3 sihb22n60s.pdf Vishay Siliconix Description: MOSFET N-CH 600V 22A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD08P06-155L-T4E3 SUD08P06-155L-T4E3 Vishay Siliconix Description: MOSFET P-CH 60V 8.4A DPAK
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD25N04-25-E3 SUD25N04-25-E3 71129.pdf Vishay Siliconix Description: MOSFET N-CH 40V 25A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD45P03-15-E3 SUD45P03-15-E3 70267.pdf Vishay Siliconix Description: MOSFET P-CH 30V TO252
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SUD50N025-06P-E3 SUD50N025-06P-E3 73349.pdf Vishay Siliconix Description: MOSFET N-CH 25V 78A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 10.7W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 114000 Stücke - Preis und Lieferfrist anzeigen
SUD50N03-12P-E3 SUD50N03-12P-E3 72267.pdf Vishay Siliconix Description: MOSFET N-CH 30V TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
SUD50N03-16P-E3 SUD50N03-16P-E3 72634.pdf Vishay Siliconix Description: MOSFET N-CH 30V TO252
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N03-16P-GE3 SUD50N03-16P-GE3 72634.pdf Vishay Siliconix Description: MOSFET N-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N04-05L-E3 SUD50N04-05L-E3 sud50n04.pdf Vishay Siliconix Description: MOSFET N-CH 40V 115A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
SUD50N04-16P-E3 SUD50N04-16P-E3 suusud50.pdf Vishay Siliconix Description: MOSFET N-CH 40V 9.8A/20A TO252
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V
Vgs (Max): ±16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N04-37P-T4-E3 SUD50N04-37P-T4-E3 sud50n04.pdf Vishay Siliconix Description: MOSFET N-CH 40V 5.4A/8A TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power Dissipation (Max): 2W (Ta), 10.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N10-34P-T4-E3 SUD50N10-34P-T4-E3 sud50n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.9A/20A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P04-23-E3 SUD50P04-23-E3 sud50p04.pdf Vishay Siliconix Description: MOSFET P-CH 40V 8.2A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P04-40P-T4-E3 SUD50P04-40P-T4-E3 sud50p04.pdf Vishay Siliconix Description: MOSFET P-CH 40V 6A/8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1555 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P08-26-E3 SUD50P08-26-E3 sud50p08.pdf Vishay Siliconix Description: MOSFET P-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12.9A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110N04-03-E3 SUM110N04-03-E3 71745.pdf Vishay Siliconix Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110P08-11-E3 SUM110P08-11-E3 sum110p0.pdf Vishay Siliconix Description: MOSFET P-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90N06-5M5P-E3 SUM90N06-5M5P-E3 sum90n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90N08-7M6P-E3 SUM90N08-7M6P-E3 sum90n08.pdf Vishay Siliconix Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP18N15-95-E3 SUP18N15-95-E3 sup18n15.pdf Vishay Siliconix Description: MOSFET N-CH 150V 18A TO220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP36N20-54P-E3 SUP36N20-54P-E3 sup36n20.pdf Vishay Siliconix Description: MOSFET N-CH 200V 36A TO220AB
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.12W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP40N10-30-E3 SUP40N10-30-E3 sup40n10.pdf Vishay Siliconix Description: MOSFET N-CH D-S 100V TO220AB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
SUP60N02-4M5P-E3 SUP60N02-4M5P-E3 sup60n02.pdf Vishay Siliconix Description: MOSFET N-CH 20V 60A TO220AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP85N10-10P-GE3 SUP85N10-10P-GE3 sup85n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 85A TO220AB
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUV85N10-10-E3 SUV85N10-10-E3 suv85n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 85A TO220AB
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T1-GE3 si8416db.pdf Vishay Siliconix Description: MOSFET N-CH 8V 16A MICRO
Supplier Device Package: 6-microfoot
Package / Case: 6-UFBGA
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA18DN-T1-GE3 SISA18DN-T1-GE3 SISA18DN.pdf Vishay Siliconix Description: MOSFET N-CH 30V 38.3A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR640DP-T1-GE3 SIR640DP-T1-GE3 sir640dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA12DN-T1-GE3 SISA12DN-T1-GE3 sisa10dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 25A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 28W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30STRLPBF IRFBE30STRLPBF 91119.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.1A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 780 Stücke
Lieferzeit 21-28 Tag (e)
IRFR220TRPBF IRFR220TRPBF sihfr220.pdf Vishay Siliconix Description: MOSFET N-CH 200V 4.8A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
auf Bestellung 609 Stücke
Lieferzeit 21-28 Tag (e)
SI4831BDY-T1-GE3 si4831bd.pdf
SI4831BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.6A 8-SOIC
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4840DY-T1-GE3 71188.pdf
SI4840DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4850EY-T1 71146.pdf
SI4850EY-T1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.7W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2317 Stücke - Preis und Lieferfrist anzeigen
SI5401DC-T1-GE3 73225.pdf
SI5401DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5406DC-T1-GE3 71657.pdf
SI5406DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5449DC-T1-E3 71327.pdf
SI5449DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI5449DC-T1-GE3 71327.pdf
SI5449DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5463EDC-T1-GE3 71364.pdf
SI5463EDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5473DC-T1-GE3 si5473dc.pdf
SI5473DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 1206-8
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5475DC-T1-E3 si5475dc.pdf
SI5475DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
SI5475DC-T1-GE3 si5475dc.pdf
SI5475DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5479DU-T1-GE3 73368.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A CHIPFET
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5480DU-T1-GE3 73585.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5481DU-T1-GE3 73777.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5482DU-T1-GE3 73594.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5484DU-T1-GE3 73589.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5485DU-T1-GE3 si5485du.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5853CDC-T1-E3 si5853cd.pdf
SI5853CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9640 Stücke - Preis und Lieferfrist anzeigen
SI5857DU-T1-GE3 si5857du.pdf
SI5857DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5858DU-T1-GE3 si5858du.pdf
SI5858DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6404DQ-T1-E3 71440.pdf
SI6404DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI6404DQ-T1-GE3 71440.pdf
SI6404DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6413DQ-T1-E3 72084.pdf
SI6413DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.2A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 400µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI6443DQ-T1-E3 72083.pdf
SI6443DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.3A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6465DQ-T1-E3 70812.pdf
SI6465DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90000 Stücke - Preis und Lieferfrist anzeigen
SI6465DQ-T1-GE3 70812.pdf
SI6465DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6473DQ-T1-E3 71164.pdf
SI6473DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
SI6473DQ-T1-GE3 71164.pdf
SI6473DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7156DP-T1-E3 si7156dp.pdf
SI7156DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7156DP-T1-GE3 si7156dp.pdf
SI7156DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7302DN-T1-GE3 73306.pdf
SI7302DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 220V 8.4A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 220V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7358ADP-T1-E3 73161.pdf
SI7358ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A PPAK SO-8
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7358ADP-T1-GE3 73161.pdf
SI7358ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7368DP-T1-E3 72154.pdf
SI7368DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7368DP-T1-GE3 72154.pdf
SI7368DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7407DN-T1-E3 si7407dn.pdf
SI7407DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7407DN-T1-GE3 si7407dn.pdf
SI7407DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7445DP-T1-E3 71626.pdf
SI7445DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
SI7445DP-T1-GE3 71626.pdf
SI7445DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7446BDP-T1-E3 72554.pdf
SI7446BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SI7446BDP-T1-GE3 72554.pdf
SI7446BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7452DP-T1-E3 72972.pdf
SI7452DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
SI7452DP-T1-GE3 72972.pdf
SI7452DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7476DP-T1-GE3 si7476dp.pdf
SI7476DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7495DP-T1-E3 72277.pdf
SI7495DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7495DP-T1-GE3 72277.pdf
SI7495DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7601DN-T1-E3 si7601dn.pdf
SI7601DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7664DP-T1-E3 73566.pdf
SI7664DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7664DP-T1-GE3 73566.pdf
SI7664DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7674DP-T1-E3 si7674dp.pdf
SI7674DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7674DP-T1-GE3 si7674dp.pdf
SI7674DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7682DP-T1-E3 73350.pdf
SI7682DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27.5W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1431 Stücke - Preis und Lieferfrist anzeigen
SI7886ADP-T1-E3 73156.pdf
SI7886ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15872 Stücke - Preis und Lieferfrist anzeigen
SI7886ADP-T1-GE3 73156.pdf
SI7886ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8417DB-T2-E1 73531.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 14.5A 2X2 6MFP
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.57W
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE726DF-T1-E3 sie726df.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE806DF-T1-GE3 sie806df.pdf
SIE806DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE816DF-T1-E3 sie816df.pdf
SIE816DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE816DF-T1-GE3 sie816df.pdf
SIE816DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE830DF-T1-GE3 sie830df.pdf
SIE830DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE836DF-T1-E3 sie836df.pdf
SIE836DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.3A POLARPAK
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: 10-PolarPAK® (SH)
Package / Case: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE860DF-T1-E3 sie860df.pdf
SIE860DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 10-PolarPAK® (M)
Package / Case: 10-PolarPAK® (M)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60S-E3 sihb22n60s.pdf
SIHB22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD08P06-155L-T4E3
SUD08P06-155L-T4E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.4A DPAK
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD25N04-25-E3 71129.pdf
SUD25N04-25-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD45P03-15-E3 70267.pdf
SUD45P03-15-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V TO252
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SUD50N025-06P-E3 73349.pdf
SUD50N025-06P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 78A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 10.7W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 114000 Stücke - Preis und Lieferfrist anzeigen
SUD50N03-12P-E3 72267.pdf
SUD50N03-12P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
SUD50N03-16P-E3 72634.pdf
SUD50N03-16P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V TO252
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N03-16P-GE3 72634.pdf
SUD50N03-16P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N04-05L-E3 sud50n04.pdf
SUD50N04-05L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 115A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
SUD50N04-16P-E3 suusud50.pdf
SUD50N04-16P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 9.8A/20A TO252
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V
Vgs (Max): ±16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N04-37P-T4-E3 sud50n04.pdf
SUD50N04-37P-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.4A/8A TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power Dissipation (Max): 2W (Ta), 10.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N10-34P-T4-E3 sud50n10.pdf
SUD50N10-34P-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.9A/20A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P04-23-E3 sud50p04.pdf
SUD50P04-23-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.2A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P04-40P-T4-E3 sud50p04.pdf
SUD50P04-40P-T4-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 6A/8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1555 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P08-26-E3 sud50p08.pdf
SUD50P08-26-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12.9A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110N04-03-E3 71745.pdf
SUM110N04-03-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110P08-11-E3 sum110p0.pdf
SUM110P08-11-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90N06-5M5P-E3 sum90n06.pdf
SUM90N06-5M5P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90N08-7M6P-E3 sum90n08.pdf
SUM90N08-7M6P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP18N15-95-E3 sup18n15.pdf
SUP18N15-95-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 18A TO220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP36N20-54P-E3 sup36n20.pdf
SUP36N20-54P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO220AB
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.12W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP40N10-30-E3 sup40n10.pdf
SUP40N10-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO220AB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
SUP60N02-4M5P-E3 sup60n02.pdf
SUP60N02-4M5P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A TO220AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP85N10-10P-GE3 sup85n10.pdf
SUP85N10-10P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUV85N10-10-E3 suv85n10.pdf
SUV85N10-10-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8416DB-T1-GE3 si8416db.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A MICRO
Supplier Device Package: 6-microfoot
Package / Case: 6-UFBGA
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA18DN-T1-GE3 SISA18DN.pdf
SISA18DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR640DP-T1-GE3 sir640dp.pdf
SIR640DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA12DN-T1-GE3 sisa10dn.pdf
SISA12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 28W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30STRLPBF 91119.pdf
IRFBE30STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 780 Stücke
Lieferzeit 21-28 Tag (e)
IRFR220TRPBF sihfr220.pdf
IRFR220TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
auf Bestellung 609 Stücke
Lieferzeit 21-28 Tag (e)
Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]