Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SI4831BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 6.6A 8-SOIC Supplier Device Package: 8-SO Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.3W Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drain to Source Voltage (Vdss): 30V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4840DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 10A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Tape & Reel (TR) Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4850EY-T1 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 6A 8SO Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.7W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2317 Stücke - Preis und Lieferfrist anzeigen
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SI5401DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5.2A 1206-8 Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5406DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 6.9A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: MOSFET N-Channel, Metal Oxide Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min) Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drain to Source Voltage (Vdss): 12V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5449DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A 1206-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI5449DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A 1206-8 Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5463EDC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5473DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 5.9A 1206-8 Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5475DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 5.5A 1206-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
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SI5475DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 5.5A 1206-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SI5479DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 16A CHIPFET Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® ChipFet Single |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5480DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5481DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK CHIPFET Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5482DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK CHIPFET Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5484DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 12A PPAK CHIPFET Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SI5485DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK CHIPFET Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 31W Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SI5853CDC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 4A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9640 Stücke - Preis und Lieferfrist anzeigen
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SI5857DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 6A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Dual Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 10.4W Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5858DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 6A PPAK CHIPFET Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 8.3W Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6404DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8.6A 8TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.08W Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
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SI6404DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8.6A 8TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: MOSFET N-Channel, Metal Oxide Power - Max: 1.08W Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6413DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 7.2A 8TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.05W Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 400µA Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI6443DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 7.3A 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.05W Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 8-TSSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6465DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 8.8A 8TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90000 Stücke - Preis und Lieferfrist anzeigen
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SI6465DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 8.8A 8TSSOP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI6473DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 6.2A 8-TSSOP Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.08W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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SI6473DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 6.2A 8-TSSOP Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.08W Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7156DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 40V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7156DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7302DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 220V 8.4A 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drain to Source Voltage (Vdss): 220V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7358ADP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 14A PPAK SO-8 Power - Max: 1.9W Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7358ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 14A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7368DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 13A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.7W FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7368DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 13A PPAK SO-8 Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.7W FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7407DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Manufacturer: Vishay Siliconix Base Part Number: SI7407 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7407DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Manufacturer: Vishay Siliconix Base Part Number: SI7407 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7445DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK 1212-8 Power - Max: 1.9W Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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SI7445DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7446BDP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 30V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
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SI7446BDP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7452DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 11.5A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drain to Source Voltage (Vdss): 60V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
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SI7452DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 11.5A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drain to Source Voltage (Vdss): 60V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7476DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 15A PPAK SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drain to Source Voltage (Vdss): 40V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7495DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 13A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.8W Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 1mA Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7495DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 13A PPAK SO-8 Power - Max: 1.8W Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 1mA Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drain to Source Voltage (Vdss): 12V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7601DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 16A 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 52W FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7664DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7664DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7674DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7674DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7682DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 20A PPAK SO-8 Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 27.5W Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1431 Stücke - Preis und Lieferfrist anzeigen
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SI7886ADP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15872 Stücke - Preis und Lieferfrist anzeigen
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SI7886ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SI8417DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 14.5A 2X2 6MFP Supplier Device Package: 6-Micro Foot™ (1.5x1) Package / Case: 6-MICRO FOOT™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.57W Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| SIE726DF-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A POLARPAK Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 125W Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Supplier Device Package: 10-PolarPAK® (L) Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SIE806DF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A POLARPAK Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 125W Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIE816DF-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 60A POLARPAK Packaging: Tape & Reel (TR) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK® (L) Package / Case: 10-PolarPAK® (L) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIE816DF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 60A POLARPAK Packaging: Tape & Reel (TR) Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK® (L) Package / Case: 10-PolarPAK® (L) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIE830DF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 50A POLARPAK Supplier Device Package: 10-PolarPAK® (S) Package / Case: 10-PolarPAK® (S) Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 104W Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIE836DF-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18.3A POLARPAK Drain to Source Voltage (Vdss): 200V Supplier Device Package: 10-PolarPAK® (SH) Package / Case: 10-PolarPAK® (SH) Mounting Type: Surface Mount FET Type: MOSFET N-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 104W Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIE860DF-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A POLARPAK Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 104W Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Supplier Device Package: 10-PolarPAK® (M) Package / Case: 10-PolarPAK® (M) Mounting Type: Surface Mount FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIHB22N60S-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 22A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drain to Source Voltage (Vdss): 600V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD08P06-155L-T4E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 8.4A DPAK FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.7W Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drain to Source Voltage (Vdss): 60V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SUD25N04-25-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 25A TO252 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Power Dissipation (Max): 3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD45P03-15-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V TO252 Power - Max: 4W Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
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SUD50N025-06P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 78A TO252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 10.7W (Ta), 65W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 114000 Stücke - Preis und Lieferfrist anzeigen
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SUD50N03-12P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V TO252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
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SUD50N03-16P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V TO252 Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50N03-16P-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V TO252 Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50N04-05L-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 115A TO252 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
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SUD50N04-16P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 9.8A/20A TO252 Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V Vgs (Max): ±16V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50N04-37P-T4-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 5.4A/8A TO252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 8A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Power Dissipation (Max): 2W (Ta), 10.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50N10-34P-T4-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 5.9A/20A TO252 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 2.5W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50P04-23-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 8.2A/20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50P04-40P-T4-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 6A/8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 2.4W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1555 pF @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUD50P08-26-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 12.9A, 10V Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUM110N04-03-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUM110P08-11-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 110A D2PAK Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUM90N06-5M5P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 90A D2PAK Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SUM90 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUM90N08-7M6P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 75V 90A TO263 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUP18N15-95-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 18A TO220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUP36N20-54P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 36A TO220AB Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drain to Source Voltage (Vdss): 200V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V FET Type: MOSFET N-Channel, Metal Oxide Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3.12W Supplier Device Package: TO-220AB Package / Case: TO-220-3 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUP40N10-30-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH D-S 100V TO220AB Supplier Device Package: TO-220AB Package / Case: TO-220-3 Mounting Type: Through Hole Power - Max: 3.75W Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
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SUP60N02-4M5P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 60A TO220AB Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUP85N10-10P-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SUV85N10-10-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| SI8416DB-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 16A MICRO Supplier Device Package: 6-microfoot Package / Case: 6-UFBGA FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 13W Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 8V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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SISA18DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 38.3A 1212-8 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19.8W Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIR640DP-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SISA12DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 25A 1212-8 Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 28W Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFBE30STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 780 Stücke Lieferzeit 21-28 Tag (e) |
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IRFR220TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
auf Bestellung 609 Stücke Lieferzeit 21-28 Tag (e) |
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| SI4831BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.6A 8-SOIC
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 6.6A 8-SOIC
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
| SI4840DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 10A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| SI4850EY-T1 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.7W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.7W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2317 Stücke - Preis und Lieferfrist anzeigen
| SI5401DC-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 5.2A 1206-8
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
| SI5406DC-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 6.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Drain to Source Voltage (Vdss): 12V
| SI5449DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 3.1A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI5449DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 3.1A 1206-8
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
| SI5463EDC-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.8A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI5473DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 1206-8
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 5.9A 1206-8
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
| SI5475DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
| SI5475DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
| SI5479DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A CHIPFET
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 16A CHIPFET
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
| SI5480DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SI5481DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A PPAK CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI5482DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK CHIPFET
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SI5484DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 12A PPAK CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
| SI5485DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A PPAK CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
| SI5853CDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 9640 Stücke - Preis und Lieferfrist anzeigen
| SI5857DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
| SI5858DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 6A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
| SI6404DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
| SI6404DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 30V
| SI6413DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.2A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 400µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 7.2A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 400µA
Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI6443DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.3A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 7.3A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
| SI6465DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 8.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 90000 Stücke - Preis und Lieferfrist anzeigen
| SI6465DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8.8A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 8.8A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
| SI6473DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6.2A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
| SI6473DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6.2A 8-TSSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.08W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI7156DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Type: MOSFET N-Channel, Metal Oxide
| SI7156DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
| SI7302DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 220V 8.4A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 220V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 220V 8.4A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 220V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
| SI7358ADP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A PPAK SO-8
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 14A PPAK SO-8
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SI7358ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 14A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
| SI7368DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 13A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
| SI7368DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 13A PPAK SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.7W
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
| SI7407DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
| SI7407DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7407
| SI7445DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A PPAK 1212-8
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
| SI7445DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
| SI7446BDP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
| SI7446BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SI7452DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 11.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
| SI7452DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 11.5A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60V
| SI7476DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 15A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
| SI7495DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
| SI7495DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 13A PPAK SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET P-Channel, Metal Oxide
| SI7601DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 16A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
FET Type: MOSFET P-Channel, Metal Oxide
| SI7664DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
| SI7664DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
| SI7674DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
| SI7674DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
| SI7682DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27.5W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 20A PPAK SO-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27.5W
Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
auf Bestellung 1431 Stücke - Preis und Lieferfrist anzeigen
| SI7886ADP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
auf Bestellung 15872 Stücke - Preis und Lieferfrist anzeigen
| SI7886ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 15A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V
| SI8417DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 14.5A 2X2 6MFP
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.57W
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 14.5A 2X2 6MFP
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.57W
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
| SIE726DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SIE806DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A POLARPAK
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 125W
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
| SIE816DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
| SIE816DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 60A POLARPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
| SIE830DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
| SIE836DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.3A POLARPAK
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: 10-PolarPAK® (SH)
Package / Case: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18.3A POLARPAK
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: 10-PolarPAK® (SH)
Package / Case: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
| SIE860DF-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 10-PolarPAK® (M)
Package / Case: 10-PolarPAK® (M)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A POLARPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 10-PolarPAK® (M)
Package / Case: 10-PolarPAK® (M)
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
| SIHB22N60S-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 22A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250W
| SUD08P06-155L-T4E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.4A DPAK
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.4A DPAK
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.7W
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 60V
| SUD25N04-25-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 25A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| SUD45P03-15-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V TO252
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V TO252
Power - Max: 4W
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
| SUD50N025-06P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 78A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 10.7W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 78A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 10.7W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 114000 Stücke - Preis und Lieferfrist anzeigen
| SUD50N03-12P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
| SUD50N03-16P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V TO252
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V TO252
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
| SUD50N03-16P-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| SUD50N04-05L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 115A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 115A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
| SUD50N04-16P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 9.8A/20A TO252
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V
Vgs (Max): ±16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 9.8A/20A TO252
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V
Vgs (Max): ±16V
| SUD50N04-37P-T4-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.4A/8A TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power Dissipation (Max): 2W (Ta), 10.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 5.4A/8A TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power Dissipation (Max): 2W (Ta), 10.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| SUD50N10-34P-T4-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.9A/20A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 5.9A/20A TO252
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| SUD50P04-23-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.2A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 8.2A/20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 20 V
| SUD50P04-40P-T4-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 6A/8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1555 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 6A/8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1555 pF @ 20 V
| SUD50P08-26-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12.9A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12.9A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
| SUM110N04-03-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
| SUM110P08-11-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 80V 110A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| SUM90N06-5M5P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM90
| SUM90N08-7M6P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| SUP18N15-95-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 18A TO220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 18A TO220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
| SUP36N20-54P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO220AB
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.12W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 36A TO220AB
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 15V
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.12W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
| SUP40N10-30-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO220AB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH D-S 100V TO220AB
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
| SUP60N02-4M5P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A TO220AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 60A TO220AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
| SUP85N10-10P-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 85A TO220AB
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
| SUV85N10-10-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 85A TO220AB
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
| SI8416DB-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A MICRO
Supplier Device Package: 6-microfoot
Package / Case: 6-UFBGA
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 8V 16A MICRO
Supplier Device Package: 6-microfoot
Package / Case: 6-UFBGA
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 8V
| SISA18DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 38.3A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Drain to Source Voltage (Vdss): 30V
| SIR640DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 60A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
| SISA12DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 28W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 25A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 28W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
| IRFBE30STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 780 Stücke Description: MOSFET N-CH 800V 4.1A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| IRFR220TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
auf Bestellung 609 Stücke Description: MOSFET N-CH 200V 4.8A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Lieferzeit 21-28 Tag (e)
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