Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10957) > Seite 75 nach 183
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SI4940DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 40V 4.2A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4942DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4942DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4943BDY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 6.3A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4944DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.3A Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4952DY-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 8A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4963BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4965DY-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 8SOIC |
Produkt ist nicht verfügbar |
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SI4965DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 8SOIC |
Produkt ist nicht verfügbar |
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SI4966DY-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 8SOIC |
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SI4966DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 8SOIC |
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SI4967DY-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 8SOIC |
Produkt ist nicht verfügbar |
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SI4967DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 12V 8SOIC |
Produkt ist nicht verfügbar |
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SI4972DY-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 10.8A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4973DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI5401DC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5.2A 1206-8 |
Produkt ist nicht verfügbar |
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SI5402DC-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 4.9A 1206-8 |
Produkt ist nicht verfügbar |
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SI5402DC-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 4.9A 1206-8 |
Produkt ist nicht verfügbar |
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SI5404BDC-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 5.4A 1206-8 |
Produkt ist nicht verfügbar |
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SI5406DC-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 6.9A 1206-8 |
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SI5414DC-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 6A 1206-8 |
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SI5441BDC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4.4A 1206-8 |
Produkt ist nicht verfügbar |
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SI5441DC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.9A 1206-8 |
Produkt ist nicht verfügbar |
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SI5441DC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.9A 1206-8 |
Produkt ist nicht verfügbar |
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SI5443DC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.6A 1206-8 |
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SI5443DC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.6A 1206-8 |
Produkt ist nicht verfügbar |
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SI5445BDC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 8V 5.2A 1206-8 |
Produkt ist nicht verfügbar |
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SI5449DC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 30V 3.1A 1206-8 |
Produkt ist nicht verfügbar |
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SI5449DC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 3.1A 1206-8 |
Produkt ist nicht verfügbar |
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SI5459DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 8A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® ChipFET™ Single Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® ChipFET™ Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI5461EDC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4.5A CHIPFET |
Produkt ist nicht verfügbar |
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SI5461EDC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4.5A CHIPFET |
Produkt ist nicht verfügbar |
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SI5463EDC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.8A 1206-8 |
Produkt ist nicht verfügbar |
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SI5473DC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 5.9A 1206-8 |
Produkt ist nicht verfügbar |
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SI5475BDC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 12V 6A 1206-8 |
Produkt ist nicht verfügbar |
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SI5475BDC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 6A 1206-8 |
Produkt ist nicht verfügbar |
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SI5475DC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 12V 5.5A 1206-8 |
Produkt ist nicht verfügbar |
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SI5475DC-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 5.5A 1206-8 |
Produkt ist nicht verfügbar |
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SI5479DU-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 12V 16A CHIPFET |
Produkt ist nicht verfügbar |
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SI5480DU-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 12A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5481DU-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 12A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5482DU-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 12A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5484DU-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 12A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5485DU-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 12A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5504BDC-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.12W, 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5504DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.9A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 1206-8 ChipFET™ Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI5509DC-T1-GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 6.1A 1206-8 |
Produkt ist nicht verfügbar |
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SI5513CDC-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
Produkt ist nicht verfügbar |
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SI5513DC-T1-GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 3.1A 1206-8 |
Produkt ist nicht verfügbar |
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SI5515DC-T1-GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 4.4A 1206-8 |
Produkt ist nicht verfügbar |
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SI5853CDC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4A 1206-8 |
Produkt ist nicht verfügbar |
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SI5855CDC-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.7A 1206-8 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5857DU-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 6A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5858DU-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 6A PPAK CHIPFET |
Produkt ist nicht verfügbar |
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SI5903DC-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 2.1A 1206-8 |
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SI5905BDC-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 4A 1206-8 |
Produkt ist nicht verfügbar |
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SI5905BDC-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 4A 1206-8 |
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SI5905DC-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 3A 1206-8 |
Produkt ist nicht verfügbar |
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SI5905DC-T1-GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 8V 3A 1206-8 |
Produkt ist nicht verfügbar |
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SI5906DU-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 6A PPAK FET |
Produkt ist nicht verfügbar |
SI4940DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
Produkt ist nicht verfügbar
SI4942DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4942DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4943BDY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Description: MOSFET 2P-CH 20V 6.3A 8-SOIC
Produkt ist nicht verfügbar
SI4944DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4952DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4963BDY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4965DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Description: MOSFET 2P-CH 8V 8SOIC
Produkt ist nicht verfügbar
SI4965DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Description: MOSFET 2P-CH 8V 8SOIC
Produkt ist nicht verfügbar
SI4966DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
SI4966DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
SI4967DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Description: MOSFET 2P-CH 12V 8SOIC
Produkt ist nicht verfügbar
SI4967DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
Description: MOSFET 2P-CH 12V 8SOIC
Produkt ist nicht verfügbar
SI4972DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.8A 8-SOIC
Description: MOSFET 2N-CH 30V 10.8A 8-SOIC
Produkt ist nicht verfügbar
SI4973DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI5401DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Description: MOSFET P-CH 20V 5.2A 1206-8
Produkt ist nicht verfügbar
SI5402DC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Description: MOSFET N-CH 30V 4.9A 1206-8
Produkt ist nicht verfügbar
SI5402DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Description: MOSFET N-CH 30V 4.9A 1206-8
Produkt ist nicht verfügbar
SI5404BDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.4A 1206-8
Description: MOSFET N-CH 20V 5.4A 1206-8
Produkt ist nicht verfügbar
SI5406DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
Description: MOSFET N-CH 12V 6.9A 1206-8
Produkt ist nicht verfügbar
SI5414DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 1206-8
Description: MOSFET N-CH 20V 6A 1206-8
Produkt ist nicht verfügbar
SI5441BDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
Description: MOSFET P-CH 20V 4.4A 1206-8
Produkt ist nicht verfügbar
SI5441DC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 1206-8
Description: MOSFET P-CH 20V 3.9A 1206-8
Produkt ist nicht verfügbar
SI5441DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 1206-8
Description: MOSFET P-CH 20V 3.9A 1206-8
Produkt ist nicht verfügbar
SI5443DC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 1206-8
Description: MOSFET P-CH 20V 3.6A 1206-8
Produkt ist nicht verfügbar
SI5443DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 1206-8
Description: MOSFET P-CH 20V 3.6A 1206-8
Produkt ist nicht verfügbar
SI5445BDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.2A 1206-8
Description: MOSFET P-CH 8V 5.2A 1206-8
Produkt ist nicht verfügbar
SI5449DC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
Description: MOSFET P-CH 30V 3.1A 1206-8
Produkt ist nicht verfügbar
SI5449DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
Description: MOSFET P-CH 30V 3.1A 1206-8
Produkt ist nicht verfügbar
SI5459DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
Description: MOSFET P-CH 20V 8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
Produkt ist nicht verfügbar
SI5461EDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A CHIPFET
Description: MOSFET P-CH 20V 4.5A CHIPFET
Produkt ist nicht verfügbar
SI5461EDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A CHIPFET
Description: MOSFET P-CH 20V 4.5A CHIPFET
Produkt ist nicht verfügbar
SI5463EDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
Description: MOSFET P-CH 20V 3.8A 1206-8
Produkt ist nicht verfügbar
SI5473DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 1206-8
Description: MOSFET P-CH 12V 5.9A 1206-8
Produkt ist nicht verfügbar
SI5475BDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Description: MOSFET P-CH 12V 6A 1206-8
Produkt ist nicht verfügbar
SI5475BDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Description: MOSFET P-CH 12V 6A 1206-8
Produkt ist nicht verfügbar
SI5475DC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Description: MOSFET P-CH 12V 5.5A 1206-8
Produkt ist nicht verfügbar
SI5475DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Description: MOSFET P-CH 12V 5.5A 1206-8
Produkt ist nicht verfügbar
SI5479DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A CHIPFET
Description: MOSFET P-CH 12V 16A CHIPFET
Produkt ist nicht verfügbar
SI5480DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5481DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5482DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5484DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5485DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5504BDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.96 EUR |
6000+ | 0.91 EUR |
9000+ | 0.87 EUR |
SI5504DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
Produkt ist nicht verfügbar
SI5509DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.1A 1206-8
Description: MOSFET N/P-CH 20V 6.1A 1206-8
Produkt ist nicht verfügbar
SI5513CDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar
SI5513DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.1A 1206-8
Description: MOSFET N/P-CH 20V 3.1A 1206-8
Produkt ist nicht verfügbar
SI5515DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.4A 1206-8
Description: MOSFET N/P-CH 20V 4.4A 1206-8
Produkt ist nicht verfügbar
SI5853CDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Description: MOSFET P-CH 20V 4A 1206-8
Produkt ist nicht verfügbar
SI5855CDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Description: MOSFET P-CH 20V 3.7A 1206-8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)SI5857DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5858DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Produkt ist nicht verfügbar
SI5903DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 1206-8
Description: MOSFET 2P-CH 20V 2.1A 1206-8
Produkt ist nicht verfügbar
SI5905BDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 4A 1206-8
Description: MOSFET 2P-CH 8V 4A 1206-8
Produkt ist nicht verfügbar
SI5905BDC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 4A 1206-8
Description: MOSFET 2P-CH 8V 4A 1206-8
Produkt ist nicht verfügbar
SI5905DC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 3A 1206-8
Description: MOSFET 2P-CH 8V 3A 1206-8
Produkt ist nicht verfügbar
SI5905DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 3A 1206-8
Description: MOSFET 2P-CH 8V 3A 1206-8
Produkt ist nicht verfügbar
SI5906DU-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK FET
Description: MOSFET 2N-CH 30V 6A PPAK FET
Produkt ist nicht verfügbar