Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SI7309DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8A 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19.8W Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 60V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 4996 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8273 Stücke - Preis und Lieferfrist anzeigen
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SI4386DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): ±20V Power Dissipation (Max): 1.47W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4386 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 99493 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): ±20V Power Dissipation (Max): 1.47W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4386 |
auf Bestellung 2812 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 99493 Stücke - Preis und Lieferfrist anzeigen
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SIR850DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 30A PPAK SO-8 Power - Max: 41.7W Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3400 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 30A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 25V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 41.7W |
auf Bestellung 2352 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3400 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 30A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 41.7W Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V |
auf Bestellung 2352 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3400 Stücke - Preis und Lieferfrist anzeigen
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IRFR120TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 417 Stücke - Preis und Lieferfrist anzeigen
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SIR422DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 40A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8002 Stücke - Preis und Lieferfrist anzeigen
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SI4168DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 652 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 348 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 652 Stücke - Preis und Lieferfrist anzeigen
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SIR460DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2080 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Drain to Source Voltage (Vdss): 30 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 269 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2080 Stücke - Preis und Lieferfrist anzeigen
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SI4186DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Base Part Number: SI4186 Package / Case: 8-SOIC (0.154", 3.90mm Width) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
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SQ3418EEV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 8A 6TSOP Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 20V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SIRA06DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 191 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Power - Max: 62.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 2108 Stücke Lieferzeit 21-28 Tag (e) |
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SI3440DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Base Part Number: SI3440 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.14W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14710 Stücke - Preis und Lieferfrist anzeigen
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SISA04DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 4911 Stücke Lieferzeit 21-28 Tag (e) |
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SI4812BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 7.3A 8SO Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80297 Stücke - Preis und Lieferfrist anzeigen
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SIR436DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIS476DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK1212-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 84601 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK1212-8 Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA |
auf Bestellung 807 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 84601 Stücke - Preis und Lieferfrist anzeigen
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SIS892ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 28A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15931 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 28A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
auf Bestellung 403 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 15931 Stücke - Preis und Lieferfrist anzeigen
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SI7465DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 3.2A PPAK SO-8 Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI7117DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 150V 2.17A 1212-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7117 |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12165 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 150V 2.17A 1212-8 Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7117 |
auf Bestellung 11008 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12165 Stücke - Preis und Lieferfrist anzeigen
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SI4100DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V Part Status: Active Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SI4100 |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 97081 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Base Part Number: SI4100 Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
auf Bestellung 10727 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 97081 Stücke - Preis und Lieferfrist anzeigen
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SI4100DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e) |
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SI7413DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 8.4A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Power - Max: 1.5W FET Type: MOSFET P-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 400µA Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 542 Stücke - Preis und Lieferfrist anzeigen
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SI4160DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 25.4A 8-SOIC Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4160 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6016 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 25.4A 8-SOIC Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4160 |
auf Bestellung 892 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6016 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 25.4A 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.7W Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 541 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6016 Stücke - Preis und Lieferfrist anzeigen
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SIR416DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR416 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR416 |
auf Bestellung 3510 Stücke Lieferzeit 21-28 Tag (e) |
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SI7114DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11.7A 1212-8 Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIR164DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Base Part Number: SIR164 Package / Case: PowerPAK® SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 1769 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4248 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIR164 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V Vgs (Max): ±20V |
auf Bestellung 1769 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4248 Stücke - Preis und Lieferfrist anzeigen
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SI7421DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 6.4A 1212-8 Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6117 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 6.4A 1212-8 Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V |
auf Bestellung 8935 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6117 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 6.4A 1212-8 Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) |
auf Bestellung 8935 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6117 Stücke - Preis und Lieferfrist anzeigen
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SIRA04DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) |
auf Bestellung 45 Stücke Lieferzeit 21-28 Tag (e) |
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SI3445DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIS468DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SIS468 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3113 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SIS468 |
auf Bestellung 8233 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3113 Stücke - Preis und Lieferfrist anzeigen
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SI7892BDP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 1934 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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SUD15N15-95-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 15A TO252 Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SUD15 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4268 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 150V 15A TO252 Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SUD15 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V |
auf Bestellung 391 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4268 Stücke - Preis und Lieferfrist anzeigen
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SI4401BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 8.7A 8SO FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Base Part Number: SI4401 |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3165 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 40V 8.7A 8SO Base Part Number: SI4401 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 5371 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3165 Stücke - Preis und Lieferfrist anzeigen
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SI7810DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 3.4A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7810 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 3.4A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7810 |
auf Bestellung 1440 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
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SI9424BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5.6A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta) Vgs (Max): ±9V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 245200 Stücke - Preis und Lieferfrist anzeigen
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SIE878DF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 45A POLARPAK Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 10-PolarPAK® (L) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PolarPAK® (L) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 25V 45A POLARPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 25W Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 10-PolarPAK® (L) Package / Case: 10-PolarPAK® (L) |
auf Bestellung 2946 Stücke Lieferzeit 21-28 Tag (e) |
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SIR642DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Power - Max: 83W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI4090DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 19.7A 8SO Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI4090 |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 19.7A 8SO Base Part Number: SI4090 Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2962 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 19.7A 8SOIC Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V |
auf Bestellung 2819 Stücke Lieferzeit 21-28 Tag (e) |
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SI7454CDP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 22A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29.7W Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 30.5 mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drain to Source Voltage (Vdss): 100V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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IRF9Z34STRLPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 18A D2PAK Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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IRFR420TRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 2.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 476 Stücke - Preis und Lieferfrist anzeigen
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SI7611DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 18A PPAK1212-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Manufacturer: Vishay Siliconix Base Part Number: SI7611 |
auf Bestellung 2556 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8902 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 40V 18A PPAK1212-8 Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Manufacturer: Vishay Siliconix Base Part Number: SI7611 |
auf Bestellung 2556 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8902 Stücke - Preis und Lieferfrist anzeigen
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SI4628DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 38A 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 38A 8SOIC Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 63 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
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SI7655DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 40A PPAK1212-8S Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SI7655 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5240 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 40A PPAK1212-8S Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SI7655 |
auf Bestellung 4096 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5240 Stücke - Preis und Lieferfrist anzeigen
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| SI7309DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 4996 Stücke Description: MOSFET P-CH 60V 8A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 8273 Stücke - Preis und Lieferfrist anzeigen
| SI4386DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4386
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 11A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4386
auf Bestellung 102305 Stücke - Preis und Lieferfrist anzeigen
| SI4386DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4386
auf Bestellung 2812 Stücke Description: MOSFET N-CH 30V 11A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4386
Lieferzeit 21-28 Tag (e)
auf Bestellung 99493 Stücke - Preis und Lieferfrist anzeigen
| SIR850DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Power - Max: 41.7W
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 30A PPAK SO-8
Power - Max: 41.7W
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 8104 Stücke - Preis und Lieferfrist anzeigen
| SIR850DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.7W
auf Bestellung 2352 Stücke Description: MOSFET N-CH 25V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.7W
Lieferzeit 21-28 Tag (e)
auf Bestellung 5752 Stücke - Preis und Lieferfrist anzeigen
| SIR850DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.7W
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
auf Bestellung 2352 Stücke Description: MOSFET N-CH 25V 30A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.7W
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5752 Stücke - Preis und Lieferfrist anzeigen
| IRFR120TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 7.7A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 417 Stücke - Preis und Lieferfrist anzeigen
| SIR422DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 8002 Stücke - Preis und Lieferfrist anzeigen
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 348 Stücke Description: MOSFET N-CH 30V 24A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 652 Stücke - Preis und Lieferfrist anzeigen
|
| SIR460DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 2349 Stücke - Preis und Lieferfrist anzeigen
| SIR460DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 269 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2080 Stücke - Preis und Lieferfrist anzeigen
|
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Base Part Number: SI4186
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 35.8A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Base Part Number: SI4186
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
| SQ3418EEV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 8A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SIRA06DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 2299 Stücke - Preis und Lieferfrist anzeigen
| SIRA06DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 191 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2108 Stücke - Preis und Lieferfrist anzeigen
|
| SIRA06DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 2108 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 191 Stücke - Preis und Lieferfrist anzeigen
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP
Base Part Number: SI3440
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 1.2A 6TSOP
Base Part Number: SI3440
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 14710 Stücke - Preis und Lieferfrist anzeigen
| SISA04DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 40A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 4911 Stücke - Preis und Lieferfrist anzeigen
| SISA04DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 4911 Stücke Description: MOSFET N-CH 30V 40A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI4812BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.3A 8SO
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 7.3A 8SO
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 80297 Stücke - Preis und Lieferfrist anzeigen
| SIR436DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V
| SIS476DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 85408 Stücke - Preis und Lieferfrist anzeigen
| SIS476DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
auf Bestellung 807 Stücke Description: MOSFET N-CH 30V 40A PPAK1212-8
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 84601 Stücke - Preis und Lieferfrist anzeigen
|
| SIS892ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 16334 Stücke - Preis und Lieferfrist anzeigen
| SIS892ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 403 Stücke Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 15931 Stücke - Preis und Lieferfrist anzeigen
| SI7465DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
| SI7117DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7117
auf Bestellung 9000 Stücke Description: MOSFET P-CH 150V 2.17A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7117
Lieferzeit 21-28 Tag (e)
auf Bestellung 23173 Stücke - Preis und Lieferfrist anzeigen
| SI7117DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7117
auf Bestellung 11008 Stücke Description: MOSFET P-CH 150V 2.17A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7117
Lieferzeit 21-28 Tag (e)
auf Bestellung 21165 Stücke - Preis und Lieferfrist anzeigen
| SI4100DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Part Status: Active
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4100
auf Bestellung 10000 Stücke Description: MOSFET N-CH 100V 6.8A 8SO
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Part Status: Active
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4100
Lieferzeit 21-28 Tag (e)
auf Bestellung 107808 Stücke - Preis und Lieferfrist anzeigen
| SI4100DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Base Part Number: SI4100
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
auf Bestellung 10727 Stücke Description: MOSFET N-CH 100V 6.8A 8SO
Base Part Number: SI4100
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 107081 Stücke - Preis und Lieferfrist anzeigen
| SI4100DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
| SI4100DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2 Stücke Description: MOSFET N-CH 100V 6.8A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
| SI7413DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Power - Max: 1.5W
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 8.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Power - Max: 1.5W
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Drain to Source Voltage (Vdss): 20V
auf Bestellung 542 Stücke - Preis und Lieferfrist anzeigen
| SI4160DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4160
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 25.4A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4160
auf Bestellung 7449 Stücke - Preis und Lieferfrist anzeigen
| SI4160DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4160
auf Bestellung 892 Stücke Description: MOSFET N-CH 30V 25.4A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4160
Lieferzeit 21-28 Tag (e)
auf Bestellung 6557 Stücke - Preis und Lieferfrist anzeigen
| SI4160DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 541 Stücke Description: MOSFET N-CH 30V 25.4A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6908 Stücke - Preis und Lieferfrist anzeigen
| SIR416DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR416
auf Bestellung 3000 Stücke Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR416
Lieferzeit 21-28 Tag (e)
auf Bestellung 3510 Stücke - Preis und Lieferfrist anzeigen
| SIR416DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR416
auf Bestellung 3510 Stücke Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR416
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI7114DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 11.7A 1212-8
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
| SIR164DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Base Part Number: SIR164
Package / Case: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 1769 Stücke Description: MOSFET N-CH 30V 50A PPAK SO-8
Base Part Number: SIR164
Package / Case: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 6017 Stücke - Preis und Lieferfrist anzeigen
| SIR164DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR164
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
Vgs (Max): ±20V
auf Bestellung 1769 Stücke Description: MOSFET N-CH 30V 50A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR164
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6017 Stücke - Preis und Lieferfrist anzeigen
| SI7421DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.4A 1212-8
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 6000 Stücke Description: MOSFET P-CH 30V 6.4A 1212-8
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 23987 Stücke - Preis und Lieferfrist anzeigen
| SI7421DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.4A 1212-8
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
auf Bestellung 8935 Stücke Description: MOSFET P-CH 30V 6.4A 1212-8
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 21052 Stücke - Preis und Lieferfrist anzeigen
| SI7421DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.4A 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
auf Bestellung 8935 Stücke Description: MOSFET P-CH 30V 6.4A 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 21052 Stücke - Preis und Lieferfrist anzeigen
| SIRA04DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 45 Stücke - Preis und Lieferfrist anzeigen
| SIRA04DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 45 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
|
| SI3445DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
| SIS468DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS468
auf Bestellung 6000 Stücke Description: MOSFET N-CH 80V 30A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS468
Lieferzeit 21-28 Tag (e)
auf Bestellung 11346 Stücke - Preis und Lieferfrist anzeigen
| SIS468DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS468
auf Bestellung 8233 Stücke Description: MOSFET N-CH 80V 30A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS468
Lieferzeit 21-28 Tag (e)
auf Bestellung 9113 Stücke - Preis und Lieferfrist anzeigen
| SI7892BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 15A PPAK SO-8
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 2034 Stücke - Preis und Lieferfrist anzeigen
| SI7892BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 1934 Stücke Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
|
| SUD15N15-95-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A TO252
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SUD15
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 15A TO252
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SUD15
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
auf Bestellung 4659 Stücke - Preis und Lieferfrist anzeigen
| SUD15N15-95-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A TO252
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SUD15
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
auf Bestellung 391 Stücke Description: MOSFET N-CH 150V 15A TO252
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SUD15
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4268 Stücke - Preis und Lieferfrist anzeigen
| SI4401BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI4401
auf Bestellung 5000 Stücke Description: MOSFET P-CH 40V 8.7A 8SO
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI4401
Lieferzeit 21-28 Tag (e)
auf Bestellung 8536 Stücke - Preis und Lieferfrist anzeigen
| SI4401BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Base Part Number: SI4401
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5371 Stücke Description: MOSFET P-CH 40V 8.7A 8SO
Base Part Number: SI4401
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 8165 Stücke - Preis und Lieferfrist anzeigen
| SI7810DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7810
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.4A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7810
auf Bestellung 10440 Stücke - Preis und Lieferfrist anzeigen
| SI7810DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7810
auf Bestellung 1440 Stücke Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7810
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| SI9424BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Vgs (Max): ±9V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 5.6A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Vgs (Max): ±9V
auf Bestellung 245200 Stücke - Preis und Lieferfrist anzeigen
| SIE878DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 45A POLARPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PolarPAK® (L)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 45A POLARPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PolarPAK® (L)
Packaging: Tape & Reel (TR)
auf Bestellung 2946 Stücke - Preis und Lieferfrist anzeigen
| SIE878DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 45A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
auf Bestellung 2946 Stücke Description: MOSFET N-CH 25V 45A POLARPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Lieferzeit 21-28 Tag (e)
| SIR642DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 83W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 83W
| SI4090DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SO
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4090
auf Bestellung 2500 Stücke Description: MOSFET N-CH 100V 19.7A 8SO
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4090
Lieferzeit 21-28 Tag (e)
auf Bestellung 5781 Stücke - Preis und Lieferfrist anzeigen
| SI4090DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SO
Base Part Number: SI4090
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2962 Stücke Description: MOSFET N-CH 100V 19.7A 8SO
Base Part Number: SI4090
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5319 Stücke - Preis und Lieferfrist anzeigen
| SI4090DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
auf Bestellung 2819 Stücke Description: MOSFET N-CH 100V 19.7A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5462 Stücke - Preis und Lieferfrist anzeigen
| SI7454CDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 22A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.7W
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 30.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 100V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 22A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.7W
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 30.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 100V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
| IRF9Z34STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 18A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
| IRFR420TRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 476 Stücke - Preis und Lieferfrist anzeigen
| SI7611DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7611
auf Bestellung 2556 Stücke Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7611
Lieferzeit 21-28 Tag (e)
auf Bestellung 11458 Stücke - Preis und Lieferfrist anzeigen
| SI7611DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7611
auf Bestellung 2556 Stücke Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7611
Lieferzeit 21-28 Tag (e)
auf Bestellung 11458 Stücke - Preis und Lieferfrist anzeigen
| SI4628DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 38A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
auf Bestellung 126 Stücke - Preis und Lieferfrist anzeigen
| SI4628DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 63 Stücke Description: MOSFET N-CH 30V 38A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
| SI7655DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SI7655
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SI7655
auf Bestellung 9336 Stücke - Preis und Lieferfrist anzeigen
| SI7655DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SI7655
auf Bestellung 4096 Stücke Description: MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SI7655
Lieferzeit 21-28 Tag (e)
auf Bestellung 5240 Stücke - Preis und Lieferfrist anzeigen
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