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DG9424DQ-T1-E3 DG9424DQ-T1-E3 dg9424.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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DG9426DQ-T1-E3 DG9426DQ-T1-E3 dg9424.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
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DG508BEQ-T1-E3 DG508BEQ-T1-E3 dg508b.pdf Vishay Siliconix Description: IC MUX 8CHAN PREC 16-TSSOP
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
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Vishay Siliconix Description: IC MUX 8CHAN PREC 16-TSSOP
Part Status: Active
Number of Circuits: 1
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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DG408DQ-T1-E3 DG408DQ-T1-E3 dg408.pdf Vishay Siliconix Description: IC MULTIPLEXER 8X1 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG409DQ-T1-E3 DG409DQ-T1-E3 dg408.pdf Vishay Siliconix Description: IC MULTIPLEXER DUAL 4X2 16TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG9409DN-T1-E4 DG9409DN-T1-E4 71870.pdf Vishay Siliconix Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
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Vishay Siliconix Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
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Vishay Siliconix Description: IC MUX ANA DUAL 8/4CH 16QFN
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
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DG413HSDY-T1-E3 DG413HSDY-T1-E3 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
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DG408LDY-E3 DG408LDY-E3 DG408L,409L.pdf Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -82dB @ 100kHz
Number of Circuits: 1
Part Status: Obsolete
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 29Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG453EQ-T1-E3 DG453EQ-T1-E3 dg451.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
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3+ 11.36 EUR
10+ 10.2 EUR
25+ 9.64 EUR
100+ 8.36 EUR
250+ 7.93 EUR
500+ 7.12 EUR
1000+ 6.67 EUR
DG452EQ-T1-E3 DG452EQ-T1-E3 dg451.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Base Part Number: DG452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG455EQ-T1-E3 DG455EQ-T1-E3 dg454.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG455
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG452EY-T1-E3 DG452EY-T1-E3 dg451.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG451EQ-T1-E3 DG451EQ-T1-E3 dg451.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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3+ 11.36 EUR
10+ 10.2 EUR
25+ 9.64 EUR
100+ 8.36 EUR
250+ 7.93 EUR
500+ 7.12 EUR
1000+ 6.67 EUR
DG411HSDN-T1-E4 DG411HSDN-T1-E4 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-QFN 4X4
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16-QFN 4X4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
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3+ 11.75 EUR
10+ 10.56 EUR
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DG412HSDN-T1-E4 DG412HSDN-T1-E4 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
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DG643DY-E3 DG643DY-E3 70058.pdf Vishay Siliconix Description: IC VIDEO SWITCH SPDT 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 19pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 15Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
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DG412DY-E3 DG412DY-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35Ohm
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG412
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DG612DY-E3 DG612DY-E3 DG611-13.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 10V ~ 18V
Voltage - Supply, Dual (V±): ±10V ~ 15V
Switch Time (Ton, Toff) (Max): 35ns, 25ns
-3db Bandwidth: 500MHz
Charge Injection: 4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -87dB @ 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG612
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DG613DJ-E3 DG613DJ-E3 dg611.pdf Vishay Siliconix Description: IC SWITCH QUAD NO/NC 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
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DG201HSDY-E3 DG201HSDY-E3 dg201hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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100+ 8.48 EUR
DG413HSDY-E3 DG413HSDY-E3 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
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DG409DQ-E3 DG409DQ-E3 dg408.pdf Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
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DG408DQ-E3 DG408DQ-E3 dg408.pdf Vishay Siliconix Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
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DG412DJ-E3 DG412DJ-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-DIP
Base Part Number: DG412
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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DG413DJ-E3 DG413DJ-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tube
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DG271BCJ-E3 DG271BCJ-E3 dg271b.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
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DG611DY-E3 DG611DY-E3 dg611.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG613DY-E3 DG613DY-E3 dg611.pdf Vishay Siliconix Description: IC SWITCH QUAD NO/NC 16-SOIC
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
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DG429DN DG429DN 70063.pdf Vishay Siliconix Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 20pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
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DG542DY-E3 DG542DY-E3 70055.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.5mA
Voltage - Supply, Single/Dual (±): 10 V ~ 18 V, ±10 V ~ 15 V
Voltage Supply Source: Single, Dual Supply
On-State Resistance (Max): 60Ohm
Circuit: 4 x SPST - NC/NO
Function: Video Switch
Supplier Device Package: 16-SOIC
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DG405DJ-E3 DG405DJ-E3 dg401.pdf Vishay Siliconix Description: IC ANALOG SWITCH 2 X DPST 16DIP
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
On-State Resistance (Max): 45Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Part Status: Active
Packaging: Tube
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DG407DN-T1-E3 DG407DN-T1-E3 dg406.pdf Vishay Siliconix Description: IC MULTIPLEXER 16X1 28PLCC
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
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Vishay Siliconix Description: IC MULTIPLEXER 16X1 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Packaging: Cut Tape (CT)
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
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DG390BDJ-E3 DG390BDJ-E3 71404.pdf Vishay Siliconix Description: IC SWITCH CMOS 16DIP
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 10pC
Number of Circuits: 2
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Part Status: Active
Packaging: Tube
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DG333ADW-E3 DG333ADW-E3 dg333a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPDT 20SOIC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
On-State Resistance (Max): 45Ohm
Number of Circuits: 1
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Base Part Number: DG333
Supplier Device Package: 20-SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -80dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Manufacturer: Vishay Siliconix
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DG333ADJ-E3 DG333ADJ-E3 dg333a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPDT 20DIP
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Voltage - Supply, Single (V+): 5V ~ 40V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 10pC
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -80dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-PDIP
Base Part Number: DG333
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DG307BDJ-E3 DG307BDJ-E3 dg304b.pdf Vishay Siliconix Description: IC SWITCH CMOS 14DIP
Number of Circuits: 2
Part Status: Last Time Buy
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 30pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
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DG333ALDW-E3 DG333ALDW-E3 dg333a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPDT 20SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Supplier Device Package: 20-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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DG201HSDJ-E3 DG201HSDJ-E3 dg201hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-PDIP
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DG271BDY-E3 DG271BDY-E3 dg271b.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG271
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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DG428DN-E3 DG428DN-E3 70063.pdf Vishay Siliconix Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Packaging: Tube
Part Status: Active
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Current - Leakage (IS(off)) (Max): 500pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-LCC (J-Lead)
Supplier Device Package: 20-PLCC (9x9)
Base Part Number: DG428
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DG428DJ-E3 DG428DJ-E3 70063.pdf Vishay Siliconix Description: IC MUX ANLG 8CH W/LATCH 18DIP
Supplier Device Package: 18-PDIP
Package / Case: 18-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Multiplexer/Demultiplexer Circuit: 8:1
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DG406DN-E3 DG406DN-E3 dg406.pdf Vishay Siliconix Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
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DG406DW-E3 DG406DW-E3 dg406.pdf Vishay Siliconix Description: IC MULTIPLEXER 16X1 28SOIC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Charge Injection: 15pC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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2+ 21.11 EUR
10+ 19.08 EUR
25+ 18.19 EUR
DG407DN-E3 DG407DN-E3 dg406.pdf Vishay Siliconix Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tube
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2+ 23.79 EUR
10+ 21.48 EUR
DG407DW-E3 DG407DW-E3 dg406.pdf Vishay Siliconix Description: IC MULTIPLEXER 16X1 28SOIC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4436DY-T1-E3 SI4436DY-T1-E3 73664.pdf Vishay Siliconix Description: MOSFET N-CH 60V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IRLR120TRPBF IRLR120TRPBF IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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SI6467BDQ-T1-GE3 SI6467BDQ-T1-GE3 72087.pdf Vishay Siliconix Description: MOSFET P-CH 12V 6.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 450µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI7615DN-T1-GE3 SI7615DN-T1-GE3 SI7615DN.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
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Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
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IRFR9214TRPBF IRFR9214TRPBF sihfr921.pdf Vishay Siliconix Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SI4401BDY-T1-E3 SI4401BDY-T1-E3 si4401bd.pdf Vishay Siliconix Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF620PBF IRF620PBF sihf620.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A TO220AB
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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9+ 2.99 EUR
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100+ 2.08 EUR
IRF9520SPBF IRF9520SPBF sihf9520.pdf Vishay Siliconix Description: MOSFET P-CH 100V 6.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF9Z34PBF IRF9Z34PBF sihf9z34.pdf Vishay Siliconix Description: MOSFET P-CH 60V 18A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
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10+ 4.18 EUR
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IRF740PBF IRF740PBF 91054.pdf Vishay Siliconix Description: MOSFET N-CH 400V 10A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IRFIZ24GPBF IRFIZ24GPBF 91187.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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6+ 4.63 EUR
10+ 4.16 EUR
100+ 3.34 EUR
IRFIBC30GPBF IRFIBC30GPBF 91180.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2.5A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
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IRFP250PBF IRFP250PBF 91212.pdf Vishay Siliconix Description: MOSFET N-CH 200V 30A TO247-3
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644SPBF IRF644SPBF sihf644s.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A D2PAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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SUM110N06-3M9H-E3 SUM110N06-3M9H-E3 sum110n0.pdf Vishay Siliconix Description: MOSFET N-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRFI9Z34GPBF IRFI9Z34GPBF sihfi9z3.pdf Vishay Siliconix Description: MOSFET P-CH 60V 12A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM65N20-30-E3 SUM65N20-30-E3 71702.pdf Vishay Siliconix Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SIHG20N50C-E3 SIHG20N50C-E3 sihg20n5.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRF740LCPBF IRF740LCPBF 91053.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 400V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
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4+ 7.7 EUR
10+ 6.91 EUR
100+ 5.67 EUR
500+ 4.82 EUR
SIHP25N40D-GE3 SIHP25N40D-GE3 sihp25n40d.pdf Vishay Siliconix Description: MOSFET N-CH 400V 25A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SIHP25
Package / Case: TO-220-3
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IRFZ48PBF IRFZ48PBF irfz48.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A TO220AB
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 190W (Tc)
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
4+ 7.85 EUR
10+ 7.06 EUR
100+ 5.68 EUR
500+ 4.66 EUR
IRFP254PBF IRFP254PBF 91214.pdf Vishay Siliconix Description: MOSFET N-CH 250V 23A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
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Lieferzeit 21-28 Tag (e)
3+ 10.71 EUR
10+ 9.63 EUR
100+ 7.89 EUR
IRFPC50APBF IRFPC50APBF sihfpc50.pdf Vishay Siliconix Description: MOSFET N-CH 600V 11A TO247-3
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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3+ 10.71 EUR
10+ 9.63 EUR
100+ 7.89 EUR
500+ 6.71 EUR
1000+ 6.07 EUR
IRFP150PBF IRFP150PBF 91203.pdf Vishay Siliconix Description: MOSFET N-CH 100V 41A TO247-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
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IRFBE30SPBF IRFBE30SPBF 91119.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.1A D2PAK
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
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Lieferzeit 21-28 Tag (e)
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IRFPE40PBF IRFPE40PBF irfpe40.pdf Vishay Siliconix Description: MOSFET N-CH 800V 5.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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3+ 11.05 EUR
10+ 9.93 EUR
IRFD9120 IRFD9120 sihfd912.pdf Vishay Siliconix Description: MOSFET P-CH 100V 1A 4DIP
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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DG9424DQ-T1-E3 dg9424.pdf
DG9424DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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DG9424DQ-T1-E3 dg9424.pdf
DG9424DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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DG9424DQ-T1-E3 dg9424.pdf
DG9424DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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DG9426DQ-T1-E3 dg9424.pdf
DG9426DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
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DG9426DQ-T1-E3 dg9424.pdf
DG9426DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
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DG9426DQ-T1-E3 dg9424.pdf
DG9426DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
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DG508BEQ-T1-E3 dg508b.pdf
DG508BEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8CHAN PREC 16-TSSOP
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG508BEQ-T1-E3 dg508b.pdf
DG508BEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8CHAN PREC 16-TSSOP
Part Status: Active
Number of Circuits: 1
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
DG408DQ-T1-E3 dg408.pdf
DG408DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 8X1 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG409DQ-T1-E3 dg408.pdf
DG409DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4X2 16TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
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DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
auf Bestellung 7406 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12406 Stücke - Preis und Lieferfrist anzeigen
DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
auf Bestellung 7406 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12406 Stücke - Preis und Lieferfrist anzeigen
DG413HSDY-T1-E3 dg411hs.pdf
DG413HSDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11190 Stücke - Preis und Lieferfrist anzeigen
DG413HSDY-T1-E3 dg411hs.pdf
DG413HSDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3082 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10608 Stücke - Preis und Lieferfrist anzeigen
DG413HSDY-T1-E3 dg411hs.pdf
DG413HSDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
auf Bestellung 5608 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8082 Stücke - Preis und Lieferfrist anzeigen
DG408LDY-E3 DG408L,409L.pdf
DG408LDY-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -82dB @ 100kHz
Number of Circuits: 1
Part Status: Obsolete
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 29Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
DG453EQ-T1-E3 dg451.pdf
DG453EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4395 Stücke - Preis und Lieferfrist anzeigen
3000+ 6.67 EUR
DG453EQ-T1-E3 dg451.pdf
DG453EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
auf Bestellung 4395 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3+ 11.36 EUR
10+ 10.2 EUR
25+ 9.64 EUR
100+ 8.36 EUR
250+ 7.93 EUR
500+ 7.12 EUR
1000+ 6.67 EUR
DG452EQ-T1-E3 dg451.pdf
DG452EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Base Part Number: DG452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG455EQ-T1-E3 dg454.pdf
DG455EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG455
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG452EY-T1-E3 dg451.pdf
DG452EY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG451EQ-T1-E3 dg451.pdf
DG451EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3224 Stücke - Preis und Lieferfrist anzeigen
DG451EQ-T1-E3 dg451.pdf
DG451EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
auf Bestellung 2224 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
3+ 11.36 EUR
10+ 10.2 EUR
25+ 9.64 EUR
100+ 8.36 EUR
250+ 7.93 EUR
500+ 7.12 EUR
1000+ 6.67 EUR
DG411HSDN-T1-E4 dg411hs.pdf
DG411HSDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4X4
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5044 Stücke - Preis und Lieferfrist anzeigen
DG411HSDN-T1-E4 dg411hs.pdf
DG411HSDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4X4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
auf Bestellung 446 Stücke
Lieferzeit 21-28 Tag (e)
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3+ 11.75 EUR
10+ 10.56 EUR
25+ 9.98 EUR
100+ 8.65 EUR
250+ 8.2 EUR
DG412HSDN-T1-E4 dg411hs.pdf
DG412HSDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG643DY-E3 70058.pdf
DG643DY-E3
Hersteller: Vishay Siliconix
Description: IC VIDEO SWITCH SPDT 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 19pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 15Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
auf Bestellung 340 Stücke
Lieferzeit 21-28 Tag (e)
DG412DY-E3 dg411.pdf
DG412DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35Ohm
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG412
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG612DY-E3 DG611-13.pdf
DG612DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 10V ~ 18V
Voltage - Supply, Dual (V±): ±10V ~ 15V
Switch Time (Ton, Toff) (Max): 35ns, 25ns
-3db Bandwidth: 500MHz
Charge Injection: 4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -87dB @ 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG612
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG613DJ-E3 dg611.pdf
DG613DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
auf Bestellung 127 Stücke
Lieferzeit 21-28 Tag (e)
DG201HSDY-E3 dg201hs.pdf
DG201HSDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 230 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.52 EUR
10+ 10.35 EUR
25+ 9.78 EUR
100+ 8.48 EUR
DG413HSDY-E3 dg411hs.pdf
DG413HSDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG409DQ-E3 dg408.pdf
DG409DQ-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
DG408DQ-E3 dg408.pdf
DG408DQ-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG412DJ-E3 dg411.pdf
DG412DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Base Part Number: DG412
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 779 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
DG413DJ-E3 dg411.pdf
DG413DJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
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DG271BCJ-E3 dg271b.pdf
DG271BCJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
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Lieferzeit 21-28 Tag (e)
DG611DY-E3 dg611.pdf
DG611DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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Lieferzeit 21-28 Tag (e)
DG613DY-E3 dg611.pdf
DG613DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-SOIC
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG429DN 70063.pdf
DG429DN
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 20pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG542DY-E3 70055.pdf
DG542DY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.5mA
Voltage - Supply, Single/Dual (±): 10 V ~ 18 V, ±10 V ~ 15 V
Voltage Supply Source: Single, Dual Supply
On-State Resistance (Max): 60Ohm
Circuit: 4 x SPST - NC/NO
Function: Video Switch
Supplier Device Package: 16-SOIC
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Lieferzeit 21-28 Tag (e)
DG405DJ-E3 dg401.pdf
DG405DJ-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 2 X DPST 16DIP
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
On-State Resistance (Max): 45Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG407DN-T1-E3 dg406.pdf
DG407DN-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28PLCC
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG407DN-T1-E3 dg406.pdf
DG407DN-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Packaging: Cut Tape (CT)
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
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2+ 23.79 EUR
10+ 21.48 EUR
DG390BDJ-E3 71404.pdf
DG390BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 16DIP
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 10pC
Number of Circuits: 2
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG333ADW-E3 dg333a.pdf
DG333ADW-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20SOIC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
On-State Resistance (Max): 45Ohm
Number of Circuits: 1
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Base Part Number: DG333
Supplier Device Package: 20-SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -80dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG333ADJ-E3 dg333a.pdf
DG333ADJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20DIP
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Voltage - Supply, Single (V+): 5V ~ 40V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 10pC
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -80dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-PDIP
Base Part Number: DG333
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG307BDJ-E3 dg304b.pdf
DG307BDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14DIP
Number of Circuits: 2
Part Status: Last Time Buy
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 30pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
DG333ALDW-E3 dg333a.pdf
DG333ALDW-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Supplier Device Package: 20-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
DG201HSDJ-E3 dg201hs.pdf
DG201HSDJ-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG271BDY-E3 dg271b.pdf
DG271BDY-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG271
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 627 Stücke
Lieferzeit 21-28 Tag (e)
DG428DN-E3 70063.pdf
DG428DN-E3
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Packaging: Tube
Part Status: Active
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Current - Leakage (IS(off)) (Max): 500pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-LCC (J-Lead)
Supplier Device Package: 20-PLCC (9x9)
Base Part Number: DG428
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DG428DJ-E3 70063.pdf
DG428DJ-E3
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 18DIP
Supplier Device Package: 18-PDIP
Package / Case: 18-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG406DN-E3 dg406.pdf
DG406DN-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
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Lieferzeit 21-28 Tag (e)
DG406DW-E3 dg406.pdf
DG406DW-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28SOIC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Charge Injection: 15pC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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2+ 21.11 EUR
10+ 19.08 EUR
25+ 18.19 EUR
DG407DN-E3 dg406.pdf
DG407DN-E3
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
2+ 23.79 EUR
10+ 21.48 EUR
DG407DW-E3 dg406.pdf
DG407DW-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28SOIC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4436DY-T1-E3 73664.pdf
SI4436DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLR120TRPBF IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6467BDQ-T1-GE3 72087.pdf
SI6467BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 450µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI7615DN-T1-GE3 SI7615DN.pdf
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
auf Bestellung 2952 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5852 Stücke - Preis und Lieferfrist anzeigen
SI7615DN-T1-GE3 SI7615DN.pdf
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
auf Bestellung 2952 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5852 Stücke - Preis und Lieferfrist anzeigen
IRFR9214TRPBF sihfr921.pdf
IRFR9214TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6264 Stücke - Preis und Lieferfrist anzeigen
SI4401BDY-T1-E3 si4401bd.pdf
SI4401BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24188 Stücke - Preis und Lieferfrist anzeigen
IRF620PBF sihf620.pdf
IRF620PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 116 Stücke
Lieferzeit 21-28 Tag (e)
9+ 2.99 EUR
10+ 2.67 EUR
100+ 2.08 EUR
IRF9520SPBF sihf9520.pdf
IRF9520SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2600 Stücke - Preis und Lieferfrist anzeigen
IRF9Z34PBF sihf9z34.pdf
IRF9Z34PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 334 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1736 Stücke - Preis und Lieferfrist anzeigen
6+ 4.65 EUR
10+ 4.18 EUR
100+ 3.36 EUR
IRF740PBF 91054.pdf
IRF740PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1026 Stücke - Preis und Lieferfrist anzeigen
IRFIZ24GPBF 91187.pdf
IRFIZ24GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 149 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.63 EUR
10+ 4.16 EUR
100+ 3.34 EUR
IRFIBC30GPBF 91180.pdf
IRFIBC30GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.5A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
auf Bestellung 1350 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 178 Stücke - Preis und Lieferfrist anzeigen
IRFP250PBF 91212.pdf
IRFP250PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 30A TO247-3
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644SPBF sihf644s.pdf
IRF644SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110N06-3M9H-E3 sum110n0.pdf
SUM110N06-3M9H-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI9Z34GPBF sihfi9z3.pdf
IRFI9Z34GPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 12A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM65N20-30-E3 71702.pdf
SUM65N20-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2543 Stücke - Preis und Lieferfrist anzeigen
SUM65N20-30-E3 71702.pdf
SUM65N20-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 243 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
SIHG20N50C-E3 sihg20n5.pdf
SIHG20N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 577 Stücke - Preis und Lieferfrist anzeigen
IRF740LCPBF техническая информация 91053.pdf
IRF740LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 610 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2772 Stücke - Preis und Lieferfrist anzeigen
4+ 7.7 EUR
10+ 6.91 EUR
100+ 5.67 EUR
500+ 4.82 EUR
SIHP25N40D-GE3 sihp25n40d.pdf
SIHP25N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SIHP25
Package / Case: TO-220-3
auf Bestellung 4748 Stücke
Lieferzeit 21-28 Tag (e)
IRFZ48PBF irfz48.pdf
IRFZ48PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 190W (Tc)
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 996 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.85 EUR
10+ 7.06 EUR
100+ 5.68 EUR
500+ 4.66 EUR
IRFP254PBF 91214.pdf
IRFP254PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 23A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
auf Bestellung 180 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.71 EUR
10+ 9.63 EUR
100+ 7.89 EUR
IRFPC50APBF sihfpc50.pdf
IRFPC50APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO247-3
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 1100 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.71 EUR
10+ 9.63 EUR
100+ 7.89 EUR
500+ 6.71 EUR
1000+ 6.07 EUR
IRFP150PBF 91203.pdf
IRFP150PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 41A TO247-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30SPBF 91119.pdf
IRFBE30SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 364 Stücke - Preis und Lieferfrist anzeigen
IRFPE40PBF irfpe40.pdf
IRFPE40PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 66 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
3+ 11.05 EUR
10+ 9.93 EUR
IRFD9120 sihfd912.pdf
IRFD9120
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1A 4DIP
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 41766 Stücke - Preis und Lieferfrist anzeigen
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