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SI4940DY-T1-GE3 SI4940DY-T1-GE3 Vishay Siliconix si4940dy.pdf Description: MOSFET 2N-CH 40V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4942DY-T1-E3 SI4942DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4942DY-T1-GE3 SI4942DY-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4943BDY-T1-GE3 SI4943BDY-T1-GE3 Vishay Siliconix doc?73073 Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4944DY-T1-GE3 SI4944DY-T1-GE3 Vishay Siliconix 72512.pdf Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4952DY-T1-E3 SI4952DY-T1-E3 Vishay Siliconix si4952dy.pdf Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
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SI4963BDY-T1-GE3 SI4963BDY-T1-GE3 Vishay Siliconix si4963bd.pdf Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
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SI4965DY-T1-E3 SI4965DY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 8V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4965DY-T1-GE3 SI4965DY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 8V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4966DY-T1-E3 SI4966DY-T1-E3 Vishay Siliconix si4966dy.pdf Description: MOSFET 2N-CH 20V 8SOIC
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SI4966DY-T1-GE3 SI4966DY-T1-GE3 Vishay Siliconix si4966dy.pdf Description: MOSFET 2N-CH 20V 8SOIC
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SI4967DY-T1-E3 SI4967DY-T1-E3 Vishay Siliconix 70813.pdf Description: MOSFET 2P-CH 12V 8SOIC
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SI4967DY-T1-GE3 SI4967DY-T1-GE3 Vishay Siliconix 70813.pdf Description: MOSFET 2P-CH 12V 8SOIC
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SI4972DY-T1-GE3 SI4972DY-T1-GE3 Vishay Siliconix Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4973DY-T1-GE3 SI4973DY-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI5401DC-T1-GE3 SI5401DC-T1-GE3 Vishay Siliconix 73225.pdf Description: MOSFET P-CH 20V 5.2A 1206-8
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SI5402DC-T1-E3 SI5402DC-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
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SI5402DC-T1-GE3 SI5402DC-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
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SI5404BDC-T1-GE3 SI5404BDC-T1-GE3 Vishay Siliconix 73102.pdf Description: MOSFET N-CH 20V 5.4A 1206-8
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SI5406DC-T1-GE3 SI5406DC-T1-GE3 Vishay Siliconix 71657.pdf Description: MOSFET N-CH 12V 6.9A 1206-8
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SI5414DC-T1-GE3 SI5414DC-T1-GE3 Vishay Siliconix si5414dc.pdf Description: MOSFET N-CH 20V 6A 1206-8
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SI5441BDC-T1-GE3 SI5441BDC-T1-GE3 Vishay Siliconix 73207.pdf Description: MOSFET P-CH 20V 4.4A 1206-8
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SI5441DC-T1-E3 SI5441DC-T1-E3 Vishay Siliconix si5441dc.pdf Description: MOSFET P-CH 20V 3.9A 1206-8
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SI5441DC-T1-GE3 SI5441DC-T1-GE3 Vishay Siliconix si5441dc.pdf Description: MOSFET P-CH 20V 3.9A 1206-8
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SI5443DC-T1-E3 SI5443DC-T1-E3 Vishay Siliconix 71064.pdf Description: MOSFET P-CH 20V 3.6A 1206-8
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SI5443DC-T1-GE3 SI5443DC-T1-GE3 Vishay Siliconix 71064.pdf Description: MOSFET P-CH 20V 3.6A 1206-8
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SI5445BDC-T1-GE3 SI5445BDC-T1-GE3 Vishay Siliconix 73251.pdf Description: MOSFET P-CH 8V 5.2A 1206-8
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SI5449DC-T1-E3 SI5449DC-T1-E3 Vishay Siliconix 71327.pdf Description: MOSFET P-CH 30V 3.1A 1206-8
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SI5449DC-T1-GE3 SI5449DC-T1-GE3 Vishay Siliconix 71327.pdf Description: MOSFET P-CH 30V 3.1A 1206-8
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SI5459DU-T1-GE3 SI5459DU-T1-GE3 Vishay Siliconix si5459du.pdf Description: MOSFET P-CH 20V 8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
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SI5461EDC-T1-E3 SI5461EDC-T1-E3 Vishay Siliconix 71413.pdf Description: MOSFET P-CH 20V 4.5A CHIPFET
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SI5461EDC-T1-GE3 SI5461EDC-T1-GE3 Vishay Siliconix 71413.pdf Description: MOSFET P-CH 20V 4.5A CHIPFET
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SI5463EDC-T1-GE3 SI5463EDC-T1-GE3 Vishay Siliconix 71364.pdf Description: MOSFET P-CH 20V 3.8A 1206-8
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SI5473DC-T1-GE3 SI5473DC-T1-GE3 Vishay Siliconix si5473dc.pdf Description: MOSFET P-CH 12V 5.9A 1206-8
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SI5475BDC-T1-E3 SI5475BDC-T1-E3 Vishay Siliconix si5475bd.pdf Description: MOSFET P-CH 12V 6A 1206-8
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SI5475BDC-T1-GE3 SI5475BDC-T1-GE3 Vishay Siliconix si5475bd.pdf Description: MOSFET P-CH 12V 6A 1206-8
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SI5475DC-T1-E3 SI5475DC-T1-E3 Vishay Siliconix si5475dc.pdf Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
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SI5475DC-T1-GE3 SI5475DC-T1-GE3 Vishay Siliconix si5475dc.pdf Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
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SI5479DU-T1-GE3 Vishay Siliconix 73368.pdf Description: MOSFET P-CH 12V 16A CHIPFET
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SI5480DU-T1-GE3 Vishay Siliconix 73585.pdf Description: MOSFET N-CH 30V 12A PPAK CHIPFET
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SI5481DU-T1-GE3 Vishay Siliconix 73777.pdf Description: MOSFET P-CH 20V 12A PPAK CHIPFET
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SI5482DU-T1-GE3 Vishay Siliconix 73594.pdf Description: MOSFET N-CH 30V 12A PPAK CHIPFET
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SI5484DU-T1-GE3 Vishay Siliconix 73589.pdf Description: MOSFET N-CH 20V 12A PPAK CHIPFET
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SI5485DU-T1-GE3 Vishay Siliconix si5485du.pdf Description: MOSFET P-CH 20V 12A PPAK CHIPFET
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SI5504BDC-T1-E3 SI5504BDC-T1-E3 Vishay Siliconix si5504bdc.pdf Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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SI5504DC-T1-GE3 SI5504DC-T1-GE3 Vishay Siliconix si5504dc.pdf Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
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SI5509DC-T1-GE3 SI5509DC-T1-GE3 Vishay Siliconix 73629.pdf Description: MOSFET N/P-CH 20V 6.1A 1206-8
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SI5513CDC-T1-E3 SI5513CDC-T1-E3 Vishay Siliconix si5513cd.pdf Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5513DC-T1-GE3 SI5513DC-T1-GE3 Vishay Siliconix 71186.pdf Description: MOSFET N/P-CH 20V 3.1A 1206-8
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SI5515DC-T1-GE3 SI5515DC-T1-GE3 Vishay Siliconix 72221.pdf Description: MOSFET N/P-CH 20V 4.4A 1206-8
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SI5853CDC-T1-E3 SI5853CDC-T1-E3 Vishay Siliconix si5853cd.pdf Description: MOSFET P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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SI5855CDC-T1-E3 SI5855CDC-T1-E3 Vishay Siliconix si5855cd.pdf Description: MOSFET P-CH 20V 3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 276 pF @ 10 V
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SI5857DU-T1-GE3 SI5857DU-T1-GE3 Vishay Siliconix si5857du.pdf Description: MOSFET P-CH 20V 6A PPAK CHIPFET
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SI5858DU-T1-GE3 SI5858DU-T1-GE3 Vishay Siliconix si5858du.pdf Description: MOSFET N-CH 20V 6A PPAK CHIPFET
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SI5903DC-T1-GE3 SI5903DC-T1-GE3 Vishay Siliconix 71054.pdf Description: MOSFET 2P-CH 20V 2.1A 1206-8
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SI5905BDC-T1-E3 SI5905BDC-T1-E3 Vishay Siliconix si5905bd.pdf Description: MOSFET 2P-CH 8V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5905BDC-T1-GE3 SI5905BDC-T1-GE3 Vishay Siliconix si5905bd.pdf Description: MOSFET 2P-CH 8V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5905DC-T1-E3 SI5905DC-T1-E3 Vishay Siliconix si5905dc.pdf Description: MOSFET 2P-CH 8V 3A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
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SI5905DC-T1-GE3 SI5905DC-T1-GE3 Vishay Siliconix si5905dc.pdf Description: MOSFET 2P-CH 8V 3A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
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SI5906DU-T1-GE3 SI5906DU-T1-GE3 Vishay Siliconix SI5906DU.pdf Description: MOSFET 2N-CH 30V 6A PPAK FET
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SI4940DY-T1-GE3 si4940dy.pdf
SI4940DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 4.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4942DY-T1-E3
SI4942DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4942DY-T1-GE3
SI4942DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4943BDY-T1-GE3 doc?73073
SI4943BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4944DY-T1-GE3 72512.pdf
SI4944DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4952DY-T1-E3 si4952dy.pdf
SI4952DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
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SI4963BDY-T1-GE3 si4963bd.pdf
SI4963BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
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SI4965DY-T1-E3
SI4965DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4965DY-T1-GE3
SI4965DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 8V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
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SI4966DY-T1-E3 si4966dy.pdf
SI4966DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
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SI4966DY-T1-GE3 si4966dy.pdf
SI4966DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
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SI4967DY-T1-E3 70813.pdf
SI4967DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
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SI4967DY-T1-GE3 70813.pdf
SI4967DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 8SOIC
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SI4972DY-T1-GE3
SI4972DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4973DY-T1-GE3
SI4973DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI5401DC-T1-GE3 73225.pdf
SI5401DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Produkt ist nicht verfügbar
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SI5402DC-T1-E3
SI5402DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Produkt ist nicht verfügbar
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SI5402DC-T1-GE3
SI5402DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Produkt ist nicht verfügbar
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SI5404BDC-T1-GE3 73102.pdf
SI5404BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.4A 1206-8
Produkt ist nicht verfügbar
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SI5406DC-T1-GE3 71657.pdf
SI5406DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
Produkt ist nicht verfügbar
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SI5414DC-T1-GE3 si5414dc.pdf
SI5414DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 1206-8
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SI5441BDC-T1-GE3 73207.pdf
SI5441BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
Produkt ist nicht verfügbar
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SI5441DC-T1-E3 si5441dc.pdf
SI5441DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 1206-8
Produkt ist nicht verfügbar
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SI5441DC-T1-GE3 si5441dc.pdf
SI5441DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 1206-8
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SI5443DC-T1-E3 71064.pdf
SI5443DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 1206-8
Produkt ist nicht verfügbar
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SI5443DC-T1-GE3 71064.pdf
SI5443DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 1206-8
Produkt ist nicht verfügbar
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SI5445BDC-T1-GE3 73251.pdf
SI5445BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.2A 1206-8
Produkt ist nicht verfügbar
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SI5449DC-T1-E3 71327.pdf
SI5449DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
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SI5449DC-T1-GE3 71327.pdf
SI5449DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A 1206-8
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SI5459DU-T1-GE3 si5459du.pdf
SI5459DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
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SI5461EDC-T1-E3 71413.pdf
SI5461EDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A CHIPFET
Produkt ist nicht verfügbar
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SI5461EDC-T1-GE3 71413.pdf
SI5461EDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A CHIPFET
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SI5463EDC-T1-GE3 71364.pdf
SI5463EDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
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SI5473DC-T1-GE3 si5473dc.pdf
SI5473DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 1206-8
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SI5475BDC-T1-E3 si5475bd.pdf
SI5475BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Produkt ist nicht verfügbar
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SI5475BDC-T1-GE3 si5475bd.pdf
SI5475BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Produkt ist nicht verfügbar
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SI5475DC-T1-E3 si5475dc.pdf
SI5475DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
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SI5475DC-T1-GE3 si5475dc.pdf
SI5475DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.5A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI5479DU-T1-GE3 73368.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A CHIPFET
Produkt ist nicht verfügbar
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SI5480DU-T1-GE3 73585.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
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SI5481DU-T1-GE3 73777.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
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SI5482DU-T1-GE3 73594.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
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SI5484DU-T1-GE3 73589.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
Produkt ist nicht verfügbar
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SI5485DU-T1-GE3 si5485du.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK CHIPFET
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SI5504BDC-T1-E3 si5504bdc.pdf
SI5504BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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SI5504DC-T1-GE3 si5504dc.pdf
SI5504DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
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SI5509DC-T1-GE3 73629.pdf
SI5509DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.1A 1206-8
Produkt ist nicht verfügbar
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SI5513CDC-T1-E3 si5513cd.pdf
SI5513CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
Mindestbestellmenge: 3000
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SI5513DC-T1-GE3 71186.pdf
SI5513DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.1A 1206-8
Produkt ist nicht verfügbar
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SI5515DC-T1-GE3 72221.pdf
SI5515DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.4A 1206-8
Produkt ist nicht verfügbar
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SI5853CDC-T1-E3 si5853cd.pdf
SI5853CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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SI5855CDC-T1-E3 si5855cd.pdf
SI5855CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 276 pF @ 10 V
Produkt ist nicht verfügbar
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SI5857DU-T1-GE3 si5857du.pdf
SI5857DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
Produkt ist nicht verfügbar
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SI5858DU-T1-GE3 si5858du.pdf
SI5858DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Produkt ist nicht verfügbar
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SI5903DC-T1-GE3 71054.pdf
SI5903DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 1206-8
Produkt ist nicht verfügbar
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SI5905BDC-T1-E3 si5905bd.pdf
SI5905BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5905BDC-T1-GE3 si5905bd.pdf
SI5905BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar
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SI5905DC-T1-E3 si5905dc.pdf
SI5905DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 3A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar
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SI5905DC-T1-GE3 si5905dc.pdf
SI5905DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 3A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar
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SI5906DU-T1-GE3 SI5906DU.pdf
SI5906DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK FET
Produkt ist nicht verfügbar
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