Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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DG9424DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 8814 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 8814 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
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DG9426DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 11944 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC |
auf Bestellung 11944 Stücke Lieferzeit 21-28 Tag (e) |
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DG508BEQ-T1-E3 |
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Vishay Siliconix |
Description: IC MUX 8CHAN PREC 16-TSSOP Packaging: Tape & Reel (TR) Channel-to-Channel Matching (ΔRon): 10Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -88dB @ 1MHz Charge Injection: 2pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-TSSOP -3db Bandwidth: 250MHz On-State Resistance (Max): 380Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3pF, 13pF Switch Time (Ton, Toff) (Max): 250ns, 240ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: IC MUX 8CHAN PREC 16-TSSOP Part Status: Active Number of Circuits: 1 Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-TSSOP -3db Bandwidth: 250MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3pF, 13pF Switch Time (Ton, Toff) (Max): 250ns, 240ns Channel-to-Channel Matching (ΔRon): 10Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -88dB @ 1MHz Charge Injection: 2pC Voltage - Supply, Dual (V±): ±5V ~ 20V On-State Resistance (Max): 380Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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DG408DQ-T1-E3 |
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Vishay Siliconix |
Description: IC MULTIPLEXER 8X1 16TSSOP Supplier Device Package: 16-TSSOP On-State Resistance (Max): 100Ohm Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Number of Circuits: 1 Part Status: Active Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 3pF, 26pF Switch Time (Ton, Toff) (Max): 150ns, 150ns Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 15Ohm (Max) Charge Injection: 20pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 42659 Stücke - Preis und Lieferfrist anzeigen
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DG409DQ-T1-E3 |
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Vishay Siliconix |
Description: IC MULTIPLEXER DUAL 4X2 16TSSOP Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 14pF, 25pF Switch Time (Ton, Toff) (Max): 150ns, 150ns Channel-to-Channel Matching (ΔRon): 15Ohm (Max) Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Charge Injection: 20pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 36V Supplier Device Package: 16-TSSOP On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3929 Stücke - Preis und Lieferfrist anzeigen
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DG9409DN-T1-E4 |
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Vishay Siliconix |
Description: IC MUX ANA DUAL 8/4CH 16QFN Switch Time (Ton, Toff) (Max): 70ns, 44ns Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max) On-State Resistance (Max): 7Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Supplier Device Package: 16-QFN (4x4) Package / Case: 16-VQFN Exposed Pad Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -85dB @ 100kHz Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 23pF, 112pF Charge Injection: 29pC |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC MUX ANA DUAL 8/4CH 16QFN Switch Time (Ton, Toff) (Max): 70ns, 44ns Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max) On-State Resistance (Max): 7Ohm Number of Circuits: 2 Supplier Device Package: 16-QFN (4x4) Package / Case: 16-VQFN Exposed Pad Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -85dB @ 100kHz Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 23pF, 112pF Charge Injection: 29pC Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T |
auf Bestellung 7406 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC MUX ANA DUAL 8/4CH 16QFN Supplier Device Package: 16-QFN (4x4) Package / Case: 16-VQFN Exposed Pad Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -85dB @ 100kHz Switch Time (Ton, Toff) (Max): 70ns, 44ns Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max) On-State Resistance (Max): 7Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 23pF, 112pF Charge Injection: 29pC |
auf Bestellung 7406 Stücke Lieferzeit 21-28 Tag (e) |
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DG413HSDY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC Crosstalk: -88dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 22pC Base Part Number: DG413 Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Switch Time (Ton, Toff) (Max): 105ns, 80ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC Base Part Number: DG413 Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -88dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 22pC Switch Time (Ton, Toff) (Max): 105ns, 80ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 3082 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -88dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 22pC Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Switch Time (Ton, Toff) (Max): 105ns, 80ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V |
auf Bestellung 5608 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
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DG408LDY-E3 |
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Vishay Siliconix |
Description: IC MUX CMOS ANG DUAL 8CH 16SOIC Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 7pF, 20pF Switch Time (Ton, Toff) (Max): 55ns, 25ns Channel-to-Channel Matching (ΔRon): 1Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -82dB @ 100kHz Number of Circuits: 1 Part Status: Obsolete Charge Injection: 1pC Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 16-SOIC On-State Resistance (Max): 29Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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DG453EQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP On-State Resistance (Max): 5.3Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Switch Time (Ton, Toff) (Max): 118ns, 97ns Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Channel-to-Channel Matching (ΔRon): 120mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -85dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Number of Circuits: 4 Part Status: Active On-State Resistance (Max): 5.3Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Switch Time (Ton, Toff) (Max): 118ns, 97ns Channel-to-Channel Matching (ΔRon): 120mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -85dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-TSSOP |
auf Bestellung 4395 Stücke Lieferzeit 21-28 Tag (e) |
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DG452EQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 5.3Ohm Channel-to-Channel Matching (ΔRon): 120mOhm Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5V ~ 15V Switch Time (Ton, Toff) (Max): 118ns, 97ns Charge Injection: 22pC Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -85dB @ 1MHz Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP Base Part Number: DG452 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG455EQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Base Part Number: DG455 Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Charge Injection: 22pC Switch Time (Ton, Toff) (Max): 118ns, 97ns Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 120mOhm On-State Resistance (Max): 5.3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3275 Stücke - Preis und Lieferfrist anzeigen
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DG452EY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 5.3Ohm Channel-to-Channel Matching (ΔRon): 120mOhm Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5V ~ 15V Switch Time (Ton, Toff) (Max): 118ns, 97ns Charge Injection: 22pC Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -85dB @ 1MHz Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC Base Part Number: DG452 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1337 Stücke - Preis und Lieferfrist anzeigen
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DG451EQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Switch Time (Ton, Toff) (Max): 118ns, 97ns Channel-to-Channel Matching (ΔRon): 120mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -85dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-TSSOP On-State Resistance (Max): 5.3Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Crosstalk: -85dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-TSSOP On-State Resistance (Max): 5.3Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Switch Time (Ton, Toff) (Max): 118ns, 97ns Channel-to-Channel Matching (ΔRon): 120mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC |
auf Bestellung 2224 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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DG411HSDN-T1-E4 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-QFN 4X4 Switch Time (Ton, Toff) (Max): 105ns, 80ns Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -88dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-QFN (4x4) On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4598 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-QFN 4X4 Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Switch Time (Ton, Toff) (Max): 105ns, 80ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -88dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-QFN (4x4) On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Packaging: Cut Tape (CT) Number of Circuits: 4 Part Status: Active |
auf Bestellung 446 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4598 Stücke - Preis und Lieferfrist anzeigen
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DG412HSDN-T1-E4 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-QFN 4XX4 Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Switch Time (Ton, Toff) (Max): 105ns, 80ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -88dB @ 1MHz Charge Injection: 22pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-QFN (4x4) On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Packaging: Tape & Reel (TR) Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG643DY-E3 |
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Vishay Siliconix |
Description: IC VIDEO SWITCH SPDT 16SOIC Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -87dB @ 5MHz Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 19pC -3db Bandwidth: 500MHz Switch Time (Ton, Toff) (Max): 70ns, 50ns Voltage - Supply, Dual (V±): ±3V ~ 15V Voltage - Supply, Single (V+): 3V ~ 15V Channel-to-Channel Matching (ΔRon): 1Ohm On-State Resistance (Max): 15Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT |
auf Bestellung 340 Stücke Lieferzeit 21-28 Tag (e) |
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DG412DY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Active Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 35Ohm Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Switch Time (Ton, Toff) (Max): 175ns, 145ns Charge Injection: 5pC Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -85dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC Base Part Number: DG412 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG612DY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 45Ohm Channel-to-Channel Matching (ΔRon): 2Ohm Voltage - Supply, Single (V+): 10V ~ 18V Voltage - Supply, Dual (V±): ±10V ~ 15V Switch Time (Ton, Toff) (Max): 35ns, 25ns -3db Bandwidth: 500MHz Charge Injection: 4pC Channel Capacitance (CS(off), CD(off)): 3pF, 2pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -87dB @ 5MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC Base Part Number: DG612 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG613DJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD NO/NC 16-DIP Supplier Device Package: 16-PDIP Package / Case: 16-DIP (0.300", 7.62mm) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -87dB @ 10MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 3pF, 2pF Charge Injection: 4pC -3db Bandwidth: 500MHz Switch Time (Ton, Toff) (Max): 35ns, 25ns Voltage - Supply, Dual (V±): ±10V ~ 15V Voltage - Supply, Single (V+): 10 V ~ 18 V Channel-to-Channel Matching (ΔRon): 2Ohm On-State Resistance (Max): 45Ohm Multiplexer/Demultiplexer Circuit: 2:2 Switch Circuit: DPDT |
auf Bestellung 127 Stücke Lieferzeit 21-28 Tag (e) |
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DG201HSDY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel-to-Channel Matching (ΔRon): 1.5Ohm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -100dB @ 100kHz Charge Injection: -5pC Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 10.8V ~ 16.5V Supplier Device Package: 16-SOIC On-State Resistance (Max): 50Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube |
auf Bestellung 230 Stücke Lieferzeit 21-28 Tag (e) |
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DG413HSDY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Package / Case: 16-SOIC (0.154", 3.90mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -88dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 22pC Switch Time (Ton, Toff) (Max): 105ns, 80ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG409DQ-E3 |
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Vishay Siliconix |
Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 36V Supplier Device Package: 16-TSSOP On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 14pF, 25pF Switch Time (Ton, Toff) (Max): 150ns, 150ns Channel-to-Channel Matching (ΔRon): 15Ohm (Max) Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Charge Injection: 20pC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
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DG408DQ-E3 |
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Vishay Siliconix |
Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP Switch Time (Ton, Toff) (Max): 150ns, 150ns Channel-to-Channel Matching (ΔRon): 15Ohm (Max) Multiplexer/Demultiplexer Circuit: 8:1 Charge Injection: 20pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-TSSOP On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 3pF, 26pF |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG412DJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-DIP Base Part Number: DG412 Supplier Device Package: 16-PDIP Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Charge Injection: 5pC Switch Time (Ton, Toff) (Max): 175ns, 145ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 44V On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 779 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
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DG413DJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-DIP Supplier Device Package: 16-PDIP Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Charge Injection: 5pC Switch Time (Ton, Toff) (Max): 175ns, 145ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 44V On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Part Status: Active Packaging: Tube |
auf Bestellung 380 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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DG271BCJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16DIP On-State Resistance (Max): 50Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Part Status: Active Packaging: Tube Supplier Device Package: 16-PDIP Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -100dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Charge Injection: -5pC Switch Time (Ton, Toff) (Max): 65ns, 65ns Voltage - Supply, Dual (V±): ±15V |
auf Bestellung 100 Stücke Lieferzeit 21-28 Tag (e) |
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DG611DY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-SOIC Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -87dB @ 5MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 3pF, 2pF Charge Injection: 4pC -3db Bandwidth: 500MHz Switch Time (Ton, Toff) (Max): 35ns, 25ns Voltage - Supply, Dual (V±): ±10V ~ 15V Voltage - Supply, Single (V+): 10 V ~ 18 V Channel-to-Channel Matching (ΔRon): 2Ohm On-State Resistance (Max): 45Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC |
auf Bestellung 270 Stücke Lieferzeit 21-28 Tag (e) |
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DG613DY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD NO/NC 16-SOIC On-State Resistance (Max): 45Ohm Multiplexer/Demultiplexer Circuit: 2:2 Switch Circuit: DPDT Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Crosstalk: -87dB @ 10MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 3pF, 2pF Charge Injection: 4pC -3db Bandwidth: 500MHz Switch Time (Ton, Toff) (Max): 35ns, 25ns Voltage - Supply, Dual (V±): ±10V ~ 15V Voltage - Supply, Single (V+): 10 V ~ 18 V Channel-to-Channel Matching (ΔRon): 2Ohm |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG429DN |
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Vishay Siliconix |
Description: IC MUX ANLG 8CH W/LATCH 20PLCC Supplier Device Package: 20-PLCC (9x9) Package / Case: 20-LCC (J-Lead) Operating Temperature: -40°C ~ 85°C (TA) Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 11pF, 20pF Charge Injection: 1pC Switch Time (Ton, Toff) (Max): 150ns, 150ns Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 5Ohm On-State Resistance (Max): 100Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
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DG542DY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Current - Supply: 3.5mA Voltage - Supply, Single/Dual (±): 10 V ~ 18 V, ±10 V ~ 15 V Voltage Supply Source: Single, Dual Supply On-State Resistance (Max): 60Ohm Circuit: 4 x SPST - NC/NO Function: Video Switch Supplier Device Package: 16-SOIC |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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DG405DJ-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 2 X DPST 16DIP Charge Injection: 60pC Switch Time (Ton, Toff) (Max): 150ns, 100ns Voltage - Supply, Dual (V±): ±15V Supplier Device Package: 16-PDIP Package / Case: 16-DIP (0.300", 7.62mm) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -90dB @ 1MHz Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF On-State Resistance (Max): 45Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: DPST - NO Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
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DG407DN-T1-E3 |
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Vishay Siliconix |
Description: IC MULTIPLEXER 16X1 28PLCC Packaging: Tape & Reel (TR) Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 8pF, 65pF Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 8:1 Charge Injection: 15pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 28-PLCC (11.51x11.51) On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC MULTIPLEXER 16X1 28PLCC Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 8pF, 65pF Packaging: Cut Tape (CT) Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 8:1 Charge Injection: 15pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 28-PLCC (11.51x11.51) On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) |
auf Bestellung 12 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
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DG390BDJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH CMOS 16DIP Current - Leakage (IS(off)) (Max): 5nA Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -74dB @ 500kHz Charge Injection: 10pC Number of Circuits: 2 Voltage - Supply, Dual (V±): ±15V Supplier Device Package: 16-PDIP On-State Resistance (Max): 50Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 184 Stücke - Preis und Lieferfrist anzeigen
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DG333ADW-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPDT 20SOIC Voltage - Supply, Dual (V±): ±4V ~ 22V Voltage - Supply, Single (V+): 5V ~ 40V Channel-to-Channel Matching (ΔRon): 2Ohm (Max) On-State Resistance (Max): 45Ohm Number of Circuits: 1 Part Status: Active Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Base Part Number: DG333 Supplier Device Package: 20-SOIC Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -80dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF Charge Injection: 10pC Switch Time (Ton, Toff) (Max): 175ns, 145ns Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
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DG333ADJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPDT 20DIP Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 45Ohm Channel-to-Channel Matching (ΔRon): 2Ohm (Max) Voltage - Supply, Single (V+): 5V ~ 40V Voltage - Supply, Dual (V±): ±4V ~ 22V Switch Time (Ton, Toff) (Max): 175ns, 145ns Charge Injection: 10pC Channel Capacitance (CS(off), CD(off)): 8pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -80dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-PDIP Base Part Number: DG333 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23 Stücke - Preis und Lieferfrist anzeigen
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DG307BDJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH CMOS 14DIP Number of Circuits: 2 Part Status: Last Time Buy Current - Leakage (IS(off)) (Max): 5nA Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -74dB @ 500kHz Charge Injection: 30pC Voltage - Supply, Dual (V±): ±15V Supplier Device Package: 14-PDIP On-State Resistance (Max): 50Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 27 Stücke Lieferzeit 21-28 Tag (e) |
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DG333ALDW-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPDT 20SOIC Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel-to-Channel Matching (ΔRon): 2Ohm (Max) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -80dB @ 1MHz Charge Injection: 10pC Voltage - Supply, Dual (V±): ±4V ~ 22V Voltage - Supply, Single (V+): 5V ~ 40V Supplier Device Package: 20-SOIC On-State Resistance (Max): 45Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube |
auf Bestellung 493 Stücke Lieferzeit 21-28 Tag (e) |
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DG201HSDJ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16DIP On-State Resistance (Max): 50Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel-to-Channel Matching (ΔRon): 1.5Ohm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -100dB @ 100kHz Charge Injection: -5pC Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 10.8V ~ 16.5V Supplier Device Package: 16-PDIP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG271BDY-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Base Part Number: DG271 Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -100dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Charge Injection: -5pC Switch Time (Ton, Toff) (Max): 65ns, 65ns Voltage - Supply, Dual (V±): ±15V On-State Resistance (Max): 50Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 627 Stücke Lieferzeit 21-28 Tag (e) |
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DG428DN-E3 |
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Vishay Siliconix |
Description: IC MUX ANLG 8CH W/LATCH 20PLCC Packaging: Tube Part Status: Active Multiplexer/Demultiplexer Circuit: 8:1 Number of Circuits: 1 On-State Resistance (Max): 100Ohm Channel-to-Channel Matching (ΔRon): 5Ohm Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 150ns, 150ns Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 11pF, 40pF Current - Leakage (IS(off)) (Max): 500pA Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 20-LCC (J-Lead) Supplier Device Package: 20-PLCC (9x9) Base Part Number: DG428 |
auf Bestellung 460 Stücke Lieferzeit 21-28 Tag (e) |
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DG428DJ-E3 |
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Vishay Siliconix |
Description: IC MUX ANLG 8CH W/LATCH 18DIP Supplier Device Package: 18-PDIP Package / Case: 18-DIP (0.300", 7.62mm) Operating Temperature: -40°C ~ 85°C (TA) Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 11pF, 40pF Charge Injection: 1pC Switch Time (Ton, Toff) (Max): 150ns, 150ns Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 5Ohm On-State Resistance (Max): 100Ohm Multiplexer/Demultiplexer Circuit: 8:1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG406DN-E3 |
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Vishay Siliconix |
Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC Packaging: Tube Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm Supplier Device Package: 28-PLCC (11.51x11.51) Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 15pC Multiplexer/Demultiplexer Circuit: 16:1 Channel-to-Channel Matching (ΔRon): 5Ohm Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel Capacitance (CS(off), CD(off)): 8pF, 130pF Current - Leakage (IS(off)) (Max): 500pA Part Status: Active Number of Circuits: 1 |
auf Bestellung 1422 Stücke Lieferzeit 21-28 Tag (e) |
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DG406DW-E3 |
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Vishay Siliconix |
Description: IC MULTIPLEXER 16X1 28SOIC Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 16:1 Charge Injection: 15pC Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 8pF, 130pF Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 28-SOIC On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Tube |
auf Bestellung 70 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
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DG407DN-E3 |
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Vishay Siliconix |
Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 8pF, 65pF Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 8:1 Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 15pC Supplier Device Package: 28-PLCC (11.51x11.51) On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-LCC (J-Lead) Packaging: Tube |
auf Bestellung 13 Stücke Lieferzeit 21-28 Tag (e) |
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DG407DW-E3 |
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Vishay Siliconix |
Description: IC MULTIPLEXER 16X1 28SOIC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 28-SOIC On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Tube Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 8pF, 65pF Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 8:1 Charge Injection: 15pC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI4436DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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IRLR120TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16395 Stücke - Preis und Lieferfrist anzeigen
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SI6467BDQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 6.8A 8TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Power - Max: 1.05W Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Vgs(th) (Max) @ Id: 850mV @ 450µA Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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SI7615DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7615 |
auf Bestellung 2952 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7615 |
auf Bestellung 2952 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
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IRFR9214TRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 250V 2.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6264 Stücke - Preis und Lieferfrist anzeigen
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SI4401BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 8.7A 8SO Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24188 Stücke - Preis und Lieferfrist anzeigen
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IRF620PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A TO220AB Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
auf Bestellung 116 Stücke Lieferzeit 21-28 Tag (e) |
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IRF9520SPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 6.8A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2600 Stücke - Preis und Lieferfrist anzeigen
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IRF9Z34PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 18A TO220AB Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
auf Bestellung 334 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1736 Stücke - Preis und Lieferfrist anzeigen
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IRF740PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1026 Stücke - Preis und Lieferfrist anzeigen
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IRFIZ24GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 14A TO220-3 Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 37W (Tc) Packaging: Tube Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
auf Bestellung 149 Stücke Lieferzeit 21-28 Tag (e) |
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IRFIBC30GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 2.5A TO220-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel |
auf Bestellung 1350 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 178 Stücke - Preis und Lieferfrist anzeigen
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IRFP250PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 30A TO247-3 Package / Case: TO-247-3 Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Packaging: Tube Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF644SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 14A D2PAK Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SUM110N06-3M9H-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 110A TO263 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFI9Z34GPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 12A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SUM65N20-30-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 65A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 200V 65A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 243 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
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SIHG20N50C-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Supplier Device Package: TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 577 Stücke - Preis und Lieferfrist anzeigen
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IRF740LCPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 610 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2772 Stücke - Preis und Lieferfrist anzeigen
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SIHP25N40D-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 25A TO220AB Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 278W (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Base Part Number: SIHP25 Package / Case: TO-220-3 |
auf Bestellung 4748 Stücke Lieferzeit 21-28 Tag (e) |
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IRFZ48PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V Power Dissipation (Max): 190W (Tc) Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 996 Stücke Lieferzeit 21-28 Tag (e) |
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IRFP254PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 23A TO247-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel |
auf Bestellung 180 Stücke Lieferzeit 21-28 Tag (e) |
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IRFPC50APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 11A TO247-3 Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 1100 Stücke Lieferzeit 21-28 Tag (e) |
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IRFP150PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 41A TO247-3 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFBE30SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 364 Stücke - Preis und Lieferfrist anzeigen
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IRFPE40PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 5.4A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 66 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
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IRFD9120 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 1A 4DIP Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 41766 Stücke - Preis und Lieferfrist anzeigen
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| DG9424DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 3000 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 17636 Stücke - Preis und Lieferfrist anzeigen
| DG9424DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 8814 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 11822 Stücke - Preis und Lieferfrist anzeigen
| DG9424DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 8814 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 11822 Stücke - Preis und Lieferfrist anzeigen
| DG9426DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
auf Bestellung 9000 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Lieferzeit 21-28 Tag (e)
auf Bestellung 23888 Stücke - Preis und Lieferfrist anzeigen
| DG9426DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 11944 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 20944 Stücke - Preis und Lieferfrist anzeigen
| DG9426DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
auf Bestellung 11944 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Lieferzeit 21-28 Tag (e)
auf Bestellung 20944 Stücke - Preis und Lieferfrist anzeigen
| DG508BEQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX 8CHAN PREC 16-TSSOP
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX 8CHAN PREC 16-TSSOP
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
| DG508BEQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX 8CHAN PREC 16-TSSOP
Part Status: Active
Number of Circuits: 1
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1 Stücke Description: IC MUX 8CHAN PREC 16-TSSOP
Part Status: Active
Number of Circuits: 1
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 250MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| DG408DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 8X1 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MULTIPLEXER 8X1 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
auf Bestellung 42659 Stücke - Preis und Lieferfrist anzeigen
| DG409DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4X2 16TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MULTIPLEXER DUAL 4X2 16TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 2
auf Bestellung 3929 Stücke - Preis und Lieferfrist anzeigen
| DG9409DN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
auf Bestellung 5000 Stücke Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
Lieferzeit 21-28 Tag (e)
auf Bestellung 14812 Stücke - Preis und Lieferfrist anzeigen
| DG9409DN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
auf Bestellung 7406 Stücke Description: IC MUX ANA DUAL 8/4CH 16QFN
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Lieferzeit 21-28 Tag (e)
auf Bestellung 12406 Stücke - Preis und Lieferfrist anzeigen
| DG9409DN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
auf Bestellung 7406 Stücke Description: IC MUX ANA DUAL 8/4CH 16QFN
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 100kHz
Switch Time (Ton, Toff) (Max): 70ns, 44ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 3.6Ohm (Max)
On-State Resistance (Max): 7Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 23pF, 112pF
Charge Injection: 29pC
Lieferzeit 21-28 Tag (e)
auf Bestellung 12406 Stücke - Preis und Lieferfrist anzeigen
| DG413HSDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke Description: IC SWITCH QUAD SPST 16-SOIC
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 11190 Stücke - Preis und Lieferfrist anzeigen
| DG413HSDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3082 Stücke Description: IC SWITCH QUAD SPST 16-SOIC
Base Part Number: DG413
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 10608 Stücke - Preis und Lieferfrist anzeigen
| DG413HSDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
auf Bestellung 5608 Stücke Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Lieferzeit 21-28 Tag (e)
auf Bestellung 8082 Stücke - Preis und Lieferfrist anzeigen
| DG408LDY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16SOIC
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -82dB @ 100kHz
Number of Circuits: 1
Part Status: Obsolete
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 29Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX CMOS ANG DUAL 8CH 16SOIC
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Switch Time (Ton, Toff) (Max): 55ns, 25ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -82dB @ 100kHz
Number of Circuits: 1
Part Status: Obsolete
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 29Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| DG453EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
auf Bestellung 3000 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4395 Stücke - Preis und Lieferfrist anzeigen
|
| DG453EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
auf Bestellung 4395 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| DG452EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Base Part Number: DG452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Base Part Number: DG452
| DG455EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG455
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG455
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3275 Stücke - Preis und Lieferfrist anzeigen
| DG452EY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG452
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 5.3Ohm
Channel-to-Channel Matching (ΔRon): 120mOhm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 15V
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG452
auf Bestellung 1337 Stücke - Preis und Lieferfrist anzeigen
| DG451EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 3224 Stücke - Preis und Lieferfrist anzeigen
| DG451EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
auf Bestellung 2224 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| DG411HSDN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4X4
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16-QFN 4X4
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5044 Stücke - Preis und Lieferfrist anzeigen
| DG411HSDN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4X4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
auf Bestellung 446 Stücke Description: IC SWITCH QUAD SPST 16-QFN 4X4
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 4598 Stücke - Preis und Lieferfrist anzeigen
|
| DG412HSDN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16-QFN 4XX4
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
| DG643DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC VIDEO SWITCH SPDT 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 19pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 15Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
auf Bestellung 340 Stücke Description: IC VIDEO SWITCH SPDT 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 19pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Voltage - Supply, Dual (V±): ±3V ~ 15V
Voltage - Supply, Single (V+): 3V ~ 15V
Channel-to-Channel Matching (ΔRon): 1Ohm
On-State Resistance (Max): 15Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Lieferzeit 21-28 Tag (e)
| DG412DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35Ohm
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG412
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35Ohm
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG412
| DG612DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 10V ~ 18V
Voltage - Supply, Dual (V±): ±10V ~ 15V
Switch Time (Ton, Toff) (Max): 35ns, 25ns
-3db Bandwidth: 500MHz
Charge Injection: 4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -87dB @ 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG612
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 10V ~ 18V
Voltage - Supply, Dual (V±): ±10V ~ 15V
Switch Time (Ton, Toff) (Max): 35ns, 25ns
-3db Bandwidth: 500MHz
Charge Injection: 4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -87dB @ 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG612
| DG613DJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
auf Bestellung 127 Stücke Description: IC SWITCH QUAD NO/NC 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Lieferzeit 21-28 Tag (e)
| DG201HSDY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 230 Stücke Description: IC SWITCH QUAD SPST 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| DG413HSDY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16-SOIC
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
| DG409DQ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Charge Injection: 20pC
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
| DG408DQ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX CMOS ANG DUAL 8CH 16TSSOP
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
| DG412DJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Base Part Number: DG412
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 779 Stücke Description: IC SWITCH QUAD SPST 16-DIP
Base Part Number: DG412
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
| DG413DJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tube
auf Bestellung 380 Stücke Description: IC SWITCH QUAD SPST 16-DIP
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| DG271BCJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
auf Bestellung 100 Stücke Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
Lieferzeit 21-28 Tag (e)
| DG611DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
auf Bestellung 270 Stücke Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -87dB @ 5MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Lieferzeit 21-28 Tag (e)
| DG613DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-SOIC
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD NO/NC 16-SOIC
On-State Resistance (Max): 45Ohm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Crosstalk: -87dB @ 10MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
Charge Injection: 4pC
-3db Bandwidth: 500MHz
Switch Time (Ton, Toff) (Max): 35ns, 25ns
Voltage - Supply, Dual (V±): ±10V ~ 15V
Voltage - Supply, Single (V+): 10 V ~ 18 V
Channel-to-Channel Matching (ΔRon): 2Ohm
| DG429DN |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 20pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX ANLG 8CH W/LATCH 20PLCC
Supplier Device Package: 20-PLCC (9x9)
Package / Case: 20-LCC (J-Lead)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 20pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
| DG542DY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.5mA
Voltage - Supply, Single/Dual (±): 10 V ~ 18 V, ±10 V ~ 15 V
Voltage Supply Source: Single, Dual Supply
On-State Resistance (Max): 60Ohm
Circuit: 4 x SPST - NC/NO
Function: Video Switch
Supplier Device Package: 16-SOIC
auf Bestellung 1000 Stücke Description: IC SWITCH QUAD SPST 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.5mA
Voltage - Supply, Single/Dual (±): 10 V ~ 18 V, ±10 V ~ 15 V
Voltage Supply Source: Single, Dual Supply
On-State Resistance (Max): 60Ohm
Circuit: 4 x SPST - NC/NO
Function: Video Switch
Supplier Device Package: 16-SOIC
Lieferzeit 21-28 Tag (e)
| DG405DJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 2 X DPST 16DIP
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
On-State Resistance (Max): 45Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH 2 X DPST 16DIP
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
On-State Resistance (Max): 45Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Part Status: Active
Packaging: Tube
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
| DG407DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28PLCC
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MULTIPLEXER 16X1 28PLCC
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
auf Bestellung 812 Stücke - Preis und Lieferfrist anzeigen
| DG407DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Packaging: Cut Tape (CT)
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
auf Bestellung 12 Stücke Description: IC MULTIPLEXER 16X1 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Packaging: Cut Tape (CT)
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
|
| DG390BDJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 16DIP
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 10pC
Number of Circuits: 2
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH CMOS 16DIP
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 10pC
Number of Circuits: 2
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Part Status: Active
Packaging: Tube
auf Bestellung 184 Stücke - Preis und Lieferfrist anzeigen
| DG333ADW-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20SOIC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
On-State Resistance (Max): 45Ohm
Number of Circuits: 1
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Base Part Number: DG333
Supplier Device Package: 20-SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -80dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPDT 20SOIC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
On-State Resistance (Max): 45Ohm
Number of Circuits: 1
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Base Part Number: DG333
Supplier Device Package: 20-SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -80dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Manufacturer: Vishay Siliconix
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
| DG333ADJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20DIP
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Voltage - Supply, Single (V+): 5V ~ 40V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 10pC
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -80dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-PDIP
Base Part Number: DG333
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPDT 20DIP
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 45Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Voltage - Supply, Single (V+): 5V ~ 40V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 10pC
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -80dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-PDIP
Base Part Number: DG333
auf Bestellung 23 Stücke - Preis und Lieferfrist anzeigen
| DG307BDJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14DIP
Number of Circuits: 2
Part Status: Last Time Buy
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 30pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 27 Stücke Description: IC SWITCH CMOS 14DIP
Number of Circuits: 2
Part Status: Last Time Buy
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -74dB @ 500kHz
Charge Injection: 30pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 14-PDIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| DG333ALDW-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Supplier Device Package: 20-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 493 Stücke Description: IC SWITCH QUAD SPDT 20SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Supplier Device Package: 20-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| DG201HSDJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-PDIP
| DG271BDY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG271
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 627 Stücke Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG271
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -100dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: -5pC
Switch Time (Ton, Toff) (Max): 65ns, 65ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
| DG428DN-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Packaging: Tube
Part Status: Active
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Current - Leakage (IS(off)) (Max): 500pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-LCC (J-Lead)
Supplier Device Package: 20-PLCC (9x9)
Base Part Number: DG428
auf Bestellung 460 Stücke Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Packaging: Tube
Part Status: Active
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Current - Leakage (IS(off)) (Max): 500pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-LCC (J-Lead)
Supplier Device Package: 20-PLCC (9x9)
Base Part Number: DG428
Lieferzeit 21-28 Tag (e)
| DG428DJ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 18DIP
Supplier Device Package: 18-PDIP
Package / Case: 18-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX ANLG 8CH W/LATCH 18DIP
Supplier Device Package: 18-PDIP
Package / Case: 18-DIP (0.300", 7.62mm)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Multiplexer/Demultiplexer Circuit: 8:1
| DG406DN-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1422 Stücke Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
Lieferzeit 21-28 Tag (e)
| DG406DW-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28SOIC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Charge Injection: 15pC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 70 Stücke Description: IC MULTIPLEXER 16X1 28SOIC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Charge Injection: 15pC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 75 Stücke - Preis und Lieferfrist anzeigen
|
| DG407DN-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tube
auf Bestellung 13 Stücke Description: IC MUX CMOS ANLG DUAL 8CH 28PLCC
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| DG407DW-E3 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28SOIC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MULTIPLEXER 16X1 28SOIC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Charge Injection: 15pC
| SI4436DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
| IRLR120TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 16395 Stücke - Preis und Lieferfrist anzeigen
| SI6467BDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 450µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 6000 Stücke Description: MOSFET P-CH 12V 6.8A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 450µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| SI7615DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
auf Bestellung 2952 Stücke Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
Lieferzeit 21-28 Tag (e)
auf Bestellung 5852 Stücke - Preis und Lieferfrist anzeigen
| SI7615DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
auf Bestellung 2952 Stücke Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
Lieferzeit 21-28 Tag (e)
auf Bestellung 5852 Stücke - Preis und Lieferfrist anzeigen
| IRFR9214TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 6264 Stücke - Preis und Lieferfrist anzeigen
| SI4401BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 24188 Stücke - Preis und Lieferfrist anzeigen
| IRF620PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 116 Stücke Description: MOSFET N-CH 200V 5.2A TO220AB
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Lieferzeit 21-28 Tag (e)
|
| IRF9520SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 6.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 2600 Stücke - Preis und Lieferfrist anzeigen
| IRF9Z34PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 334 Stücke Description: MOSFET P-CH 60V 18A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 1736 Stücke - Preis und Lieferfrist anzeigen
|
| IRF740PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 10A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1026 Stücke - Preis und Lieferfrist anzeigen
| IRFIZ24GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 149 Stücke Description: MOSFET N-CH 60V 14A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Lieferzeit 21-28 Tag (e)
|
| IRFIBC30GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.5A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
auf Bestellung 1350 Stücke Description: MOSFET N-CH 600V 2.5A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 178 Stücke - Preis und Lieferfrist anzeigen
| IRFP250PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 30A TO247-3
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 30A TO247-3
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
| IRF644SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 14A D2PAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| SUM110N06-3M9H-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| IRFI9Z34GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 12A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 12A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| SUM65N20-30-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2543 Stücke - Preis und Lieferfrist anzeigen
| SUM65N20-30-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 243 Stücke Description: MOSFET N-CH 200V 65A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
| SIHG20N50C-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 20A TO247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 577 Stücke - Preis und Lieferfrist anzeigen
| IRF740LCPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 610 Stücke Description: MOSFET N-CH 400V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 2772 Stücke - Preis und Lieferfrist anzeigen
|
| SIHP25N40D-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SIHP25
Package / Case: TO-220-3
auf Bestellung 4748 Stücke Description: MOSFET N-CH 400V 25A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SIHP25
Package / Case: TO-220-3
Lieferzeit 21-28 Tag (e)
| IRFZ48PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 190W (Tc)
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 996 Stücke Description: MOSFET N-CH 60V 50A TO220AB
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 190W (Tc)
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| IRFP254PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 23A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
auf Bestellung 180 Stücke Description: MOSFET N-CH 250V 23A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
|
| IRFPC50APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO247-3
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 1100 Stücke Description: MOSFET N-CH 600V 11A TO247-3
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| IRFP150PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 41A TO247-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 41A TO247-3
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
| IRFBE30SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 1 Stücke Description: MOSFET N-CH 800V 4.1A D2PAK
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 364 Stücke - Preis und Lieferfrist anzeigen
| IRFPE40PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 66 Stücke Description: MOSFET N-CH 800V 5.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
|
| IRFD9120 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1A 4DIP
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 1A 4DIP
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 41766 Stücke - Preis und Lieferfrist anzeigen
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