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IRFR9214TR IRFR9214TR sihfr921.pdf Vishay Siliconix Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14347 Stücke - Preis und Lieferfrist anzeigen
IRFR9214TRR IRFR9214TRR sihfr921.pdf Vishay Siliconix Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 96000 Stücke - Preis und Lieferfrist anzeigen
IRFR9220TRL IRFR9220TRL sihfr922.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9220TRR IRFR9220TRR sihfr922.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9310TRL IRFR9310TRL sihfr931.pdf Vishay Siliconix Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9310TRR IRFR9310TRR sihfr931.pdf Vishay Siliconix Description: MOSFET P-CH 400V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFRC20TRL IRFRC20TRL sihfrc20.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFRC20TRR IRFRC20TRR sihfrc20.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50ATRL IRFS11N50ATRL 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRFS11N50ATRR IRFS11N50ATRR 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS9N60ATRL IRFS9N60ATRL sihs9n60.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A D2PAK
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS9N60ATRR IRFS9N60ATRR sihs9n60.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL31N20DTRL IRFSL31N20DTRL irfs31n20d.pdf Vishay Siliconix Description: MOSFET N-CH 200V 31A TO-262
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL31N20DTRR IRFSL31N20DTRR irfs31n20d.pdf Vishay Siliconix Description: MOSFET N-CH 200V 31A TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL9N60ATRL 90362.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A TO-262
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL9N60ATRR 90362.pdf Vishay Siliconix Description: MOSFET N-CH 600V 9.2A TO-262
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tape & Reel (TR)
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU010 IRFU010 IRF(R,U)010,12.pdf Vishay Siliconix Description: MOSFET N-CH 50V 8.2A I-PAK
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drain to Source Voltage (Vdss): 50V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 76 Stücke - Preis und Lieferfrist anzeigen
IRFU1N60A IRFU1N60A 91267.pdf Vishay Siliconix Description: MOSFET N-CH 600V 1.4A I-PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
IRFU9010 IRFU9010 sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 50V 5.3A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6400 Stücke - Preis und Lieferfrist anzeigen
IRFZ14L IRFZ14L 90365.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ14STRL IRFZ14STRL 90365.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A D2PAK
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ14STRR IRFZ14STRR 90365.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A D2PAK
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ34L IRFZ34L sihfz34s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A TO262-3
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFZ34S IRFZ34S sihfz34s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
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IRFZ34STRL IRFZ34STRL sihfz34s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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IRFZ34STRR IRFZ34STRR sihfz34s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44L IRFZ44L 91293.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A TO262-3
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44STRL IRFZ44STRL sihfz44s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ48L IRFZ48L sihfz48s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ48S IRFZ48S sihfz48s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ48STRL IRFZ48STRL sihfz48s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ48STRR IRFZ48STRR sihfz48s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL2203STRL IRL2203STRL IRL2203S.pdf Vishay Siliconix Description: MOSFET N-CH 30V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
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IRL2203STRR IRL2203STRR IRL2203S.pdf Vishay Siliconix Description: MOSFET N-CH 30V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3102L IRL3102L irl3102.pdf Vishay Siliconix Description: MOSFET N-CH 20V 61A TO262-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube
Base Part Number: IRL3102
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3202L IRL3202L irl3202.pdf Vishay Siliconix Description: MOSFET N-CH 20V 48A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Power Dissipation (Max): 69W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3302L IRL3302L irl3302.pdf Vishay Siliconix Description: MOSFET N-CH 20V 39A TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Discontinued at Digi-Key
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3303D1STRR IRL3303D1STRR irl3303.pdf Vishay Siliconix Description: MOSFET N-CH 30V 38A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3402L IRL3402L IRL3402.pdf Vishay Siliconix Description: MOSFET N-CH 20V 85A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3502L IRL3502L irl3502.pdf Vishay Siliconix Description: MOSFET N-CH 20V 110A TO262-3
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510L IRL510L Vishay Siliconix Description: MOSFET N-CH 100V 5.6A TO262-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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auf Bestellung 6050 Stücke - Preis und Lieferfrist anzeigen
IRL510STRL IRL510STRL sihf510s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.6A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510STRR IRL510STRR sihf510s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.6A D2PAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520L IRL520L Vishay Siliconix Description: MOSFET N-CH 100V 9.2A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520S IRL520S IRL520S,SIHL520S.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1172 Stücke - Preis und Lieferfrist anzeigen
IRL520STRL IRL520STRL IRL520S,SIHL520S.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A D2PAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520STRR IRL520STRR IRL520S,SIHL520S.pdf Vishay Siliconix Description: MOSFET N-CH 100V 9.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL530L IRL530L irl530.pdf Vishay Siliconix Description: MOSFET N-CH 100V 15A TO262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL530S IRL530S sihl530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 15A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4350 Stücke - Preis und Lieferfrist anzeigen
IRL530STRL IRL530STRL sihl530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 15A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL540L IRL540L Vishay Siliconix Description: MOSFET N-CH 100V 28A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Supplier Device Package: TO-262-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL540STRL IRL540STRL Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL540STRR IRL540STRR sihl540s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620STRL IRL620STRL 91302.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620STRR IRL620STRR 91302.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640L IRL640L Vishay Siliconix Description: MOSFET N-CH 200V 17A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640STRL IRL640STRL sihl640s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 17A D2PAK
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640STRR IRL640STRR sihl640s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 17A D2PAK
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR014TRR IRLR014TRR sihlr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR024TRR IRLR024TRR irlr024.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR110TRR IRLR110TRR sihlr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR120TRR IRLR120TRR IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR8103TRL IRLR8103TRL Vishay Siliconix Description: MOSFET N-CH 30V 89A DPAK
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR8103TRR IRLR8103TRR Vishay Siliconix Description: MOSFET N-CH 30V 89A DPAK
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ14STRL IRLZ14STRL sihlz14s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A D2PAK
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ14STRR IRLZ14STRR sihlz14s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 753 Stücke - Preis und Lieferfrist anzeigen
IRLZ24L IRLZ24L IRLZ24S(L),SiHLZ24S(L).pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1572 Stücke - Preis und Lieferfrist anzeigen
IRLZ24S IRLZ24S IRLZ24S(L),SiHLZ24S(L).pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12110 Stücke - Preis und Lieferfrist anzeigen
IRLZ24STRL IRLZ24STRL IRLZ24S(L),SiHLZ24S(L).pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ24STRR IRLZ24STRR IRLZ24S(L),SiHLZ24S(L).pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ34L IRLZ34L sihlz34.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1822 Stücke - Preis und Lieferfrist anzeigen
IRLZ34S IRLZ34S sihlz34.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLZ34STRL IRLZ34STRL sihlz34.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ34STRR IRLZ34STRR sihlz34.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ44L IRLZ44L Vishay Siliconix Description: MOSFET N-CH 60V 50A TO262-3
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ44STRL IRLZ44STRL Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644NS IRF644NS IRF,SiHF644N,NS,NL,.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
SIS438DN-T1-GE3 SIS438DN-T1-GE3 sis438dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 16A PPAK 1212-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1068 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 162 Stücke - Preis und Lieferfrist anzeigen
IRF644N IRF644N IRF,SiHF644N,NS,NL,.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
IRF3314STRL IRF3314STRL Vishay Siliconix Description: MOSFET N-CH 150V D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644NSTRL IRF644NSTRL IRF,SiHF644N,NS,NL,.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644NSTRR IRF644NSTRR IRF,SiHF644N,NS,NL,.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF7822TRL IRF7822TRL IRF7822.pdf Vishay Siliconix Description: MOSFET N-CH 30V 18A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF7822TRR IRF7822TRR IRF7822.pdf Vishay Siliconix Description: MOSFET N-CH 30V 18A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI620 IRFI620 91146.pdf Vishay Siliconix Description: MOSFET N-CH 200V 4.1A TO220FP
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 30W
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFIZ46G IRFIZ46G Vishay Siliconix Description: MOSFET N-CH 50V TO220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44RSTRR IRFZ44RSTRR 91292.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ46L IRFZ46L IRFZ46S,L.pdf Vishay Siliconix Description: MOSFET N-CH 50V 50A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLL1503TR IRLL1503TR Vishay Siliconix Description: MOSFET N-CH 30V SOT223
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLL1905TR IRLL1905TR Vishay Siliconix Description: MOSFET N-CH 55V 1.6A SOT223
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Base Part Number: IRLL1905
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLU3714TR IRLU3714TR Vishay Siliconix Description: MOSFET N-CH 20V 36A TO251AA
Part Status: Active
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 47W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFB17N60K IRFB17N60K IRFB17N60K,%20SiHFB17N60K.pdf Vishay Siliconix Description: MOSFET N-CH 600V 17A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 340W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
IRF2807ZSTRL IRF2807ZSTRL irf2807z.pdf Vishay Siliconix Description: MOSFET N-CH 75V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF2807ZSTRR IRF2807ZSTRR irf2807z.pdf Vishay Siliconix Description: MOSFET N-CH 75V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF3205ZSTRL IRF3205ZSTRL irf3205z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 75A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF3205ZSTRR IRF3205ZSTRR irf3205z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 75A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU4105ZTR IRFU4105ZTR irfr4105z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 30A I-PAK
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU4105ZTRL IRFU4105ZTRL irfr4105z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 30A I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU4105ZTRR IRFU4105ZTRR irfr4105z.pdf Vishay Siliconix Description: MOSFET N-CH 55V 30A I-PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: IRFU4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFB16N50K IRFB16N50K IRFB16N50K,%20SiHFB16N50K.pdf Vishay Siliconix Description: MOSFET N-CH 500V 17A TO-220AB
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Power Dissipation (Max): 280W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: IRFB16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9214TR sihfr921.pdf
IRFR9214TR
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14347 Stücke - Preis und Lieferfrist anzeigen
IRFR9214TRR sihfr921.pdf
IRFR9214TRR
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 96000 Stücke - Preis und Lieferfrist anzeigen
IRFR9220TRL sihfr922.pdf
IRFR9220TRL
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9220TRR sihfr922.pdf
IRFR9220TRR
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9310TRL sihfr931.pdf
IRFR9310TRL
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9310TRR sihfr931.pdf
IRFR9310TRR
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFRC20TRL sihfrc20.pdf
IRFRC20TRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFRC20TRR sihfrc20.pdf
IRFRC20TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50ATRL 91286.pdf
IRFS11N50ATRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
IRFS11N50ATRR 91286.pdf
IRFS11N50ATRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS9N60ATRL sihs9n60.pdf
IRFS9N60ATRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS9N60ATRR sihs9n60.pdf
IRFS9N60ATRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL31N20DTRL irfs31n20d.pdf
IRFSL31N20DTRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 31A TO-262
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL31N20DTRR irfs31n20d.pdf
IRFSL31N20DTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 31A TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL9N60ATRL 90362.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO-262
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFSL9N60ATRR 90362.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO-262
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tape & Reel (TR)
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU010 IRF(R,U)010,12.pdf
IRFU010
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 8.2A I-PAK
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drain to Source Voltage (Vdss): 50V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 76 Stücke - Preis und Lieferfrist anzeigen
IRFU1N60A 91267.pdf
IRFU1N60A
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A I-PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFU9010 sihfr901.pdf
IRFU9010
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 5.3A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6400 Stücke - Preis und Lieferfrist anzeigen
IRFZ14L 90365.pdf
IRFZ14L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ14STRL 90365.pdf
IRFZ14STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ14STRR 90365.pdf
IRFZ14STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ34L sihfz34s.pdf
IRFZ34L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO262-3
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ34S sihfz34s.pdf
IRFZ34S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5080 Stücke - Preis und Lieferfrist anzeigen
IRFZ34STRL sihfz34s.pdf
IRFZ34STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ34STRR sihfz34s.pdf
IRFZ34STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44L 91293.pdf
IRFZ44L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO262-3
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44STRL sihfz44s.pdf
IRFZ44STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50000 Stücke - Preis und Lieferfrist anzeigen
IRFZ48L sihfz48s.pdf
IRFZ48L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ48S sihfz48s.pdf
IRFZ48S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ48STRL sihfz48s.pdf
IRFZ48STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ48STRR sihfz48s.pdf
IRFZ48STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL2203STRL IRL2203S.pdf
IRL2203STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL2203STRR IRL2203S.pdf
IRL2203STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3102L irl3102.pdf
IRL3102L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 61A TO262-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube
Base Part Number: IRL3102
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3202L irl3202.pdf
IRL3202L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 48A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Power Dissipation (Max): 69W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3302L irl3302.pdf
IRL3302L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 39A TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Discontinued at Digi-Key
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3303D1STRR irl3303.pdf
IRL3303D1STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3402L IRL3402.pdf
IRL3402L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 85A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL3502L irl3502.pdf
IRL3502L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 110A TO262-3
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510L
IRL510L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO262-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6050 Stücke - Preis und Lieferfrist anzeigen
IRL510STRL sihf510s.pdf
IRL510STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510STRR sihf510s.pdf
IRL510STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520L
IRL520L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520S IRL520S,SIHL520S.pdf
IRL520S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1172 Stücke - Preis und Lieferfrist anzeigen
IRL520STRL IRL520S,SIHL520S.pdf
IRL520STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL520STRR IRL520S,SIHL520S.pdf
IRL520STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL530L irl530.pdf
IRL530L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A TO262-3
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL530S sihl530s.pdf
IRL530S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4350 Stücke - Preis und Lieferfrist anzeigen
IRL530STRL sihl530s.pdf
IRL530STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL540L
IRL540L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Supplier Device Package: TO-262-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL540STRL
IRL540STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL540STRR sihl540s.pdf
IRL540STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620STRL 91302.pdf
IRL620STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620STRR 91302.pdf
IRL620STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640L
IRL640L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640STRL sihl640s.pdf
IRL640STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640STRR sihl640s.pdf
IRL640STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR014TRR sihlr014.pdf
IRLR014TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR024TRR irlr024.pdf
IRLR024TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR110TRR sihlr110.pdf
IRLR110TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR120TRR IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR8103TRL
IRLR8103TRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 89A DPAK
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLR8103TRR
IRLR8103TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 89A DPAK
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ14STRL sihlz14s.pdf
IRLZ14STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ14STRR sihlz14s.pdf
IRLZ14STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLZ24L IRLZ24S(L),SiHLZ24S(L).pdf
IRLZ24L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLZ24S IRLZ24S(L),SiHLZ24S(L).pdf
IRLZ24S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLZ24STRL IRLZ24S(L),SiHLZ24S(L).pdf
IRLZ24STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ24STRR IRLZ24S(L),SiHLZ24S(L).pdf
IRLZ24STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ34L sihlz34.pdf
IRLZ34L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLZ34S sihlz34.pdf
IRLZ34S
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLZ34STRL sihlz34.pdf
IRLZ34STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ34STRR sihlz34.pdf
IRLZ34STRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ44L
IRLZ44L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO262-3
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ44STRL
IRLZ44STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644NS IRF,SiHF644N,NS,NL,.pdf
IRF644NS
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIS438DN-T1-GE3 sis438dn.pdf
SIS438DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A PPAK 1212-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1068 Stücke
Lieferzeit 21-28 Tag (e)
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IRF644N IRF,SiHF644N,NS,NL,.pdf
IRF644N
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF3314STRL
IRF3314STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644NSTRL IRF,SiHF644N,NS,NL,.pdf
IRF644NSTRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644NSTRR IRF,SiHF644N,NS,NL,.pdf
IRF644NSTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF7822TRL IRF7822.pdf
IRF7822TRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF7822TRR IRF7822.pdf
IRF7822TRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFI620 91146.pdf
IRFI620
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.1A TO220FP
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 30W
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFIZ46G
IRFIZ46G
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V TO220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ44RSTRR 91292.pdf
IRFZ44RSTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ46L IRFZ46S,L.pdf
IRFZ46L
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 50A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLL1503TR
IRLL1503TR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SOT223
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLL1905TR
IRLL1905TR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 1.6A SOT223
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Base Part Number: IRLL1905
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLU3714TR
IRLU3714TR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 36A TO251AA
Part Status: Active
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 47W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFB17N60K IRFB17N60K,%20SiHFB17N60K.pdf
IRFB17N60K
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 17A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 340W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRF2807ZSTRL irf2807z.pdf
IRF2807ZSTRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF2807ZSTRR irf2807z.pdf
IRF2807ZSTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF3205ZSTRL irf3205z.pdf
IRF3205ZSTRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 75A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF3205ZSTRR irf3205z.pdf
IRF3205ZSTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 75A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU4105ZTR irfr4105z.pdf
IRFU4105ZTR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A I-PAK
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU4105ZTRL irfr4105z.pdf
IRFU4105ZTRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU4105ZTRR irfr4105z.pdf
IRFU4105ZTRR
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A I-PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: IRFU4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFB16N50K IRFB16N50K,%20SiHFB16N50K.pdf
IRFB16N50K
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO-220AB
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Power Dissipation (Max): 280W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: IRFB16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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