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Si3588DV-T1-GE3 Si3588DV-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 20V 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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SI3805DV-T1-GE3 SI3805DV-T1-GE3 Vishay Siliconix si3805dv.pdf Description: MOSFET P-CH 20V 3.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta), 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
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Si3900DV-T1-GE3 Si3900DV-T1-GE3 Vishay Siliconix si3900dv.pdf Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
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Si3932DV-T1-GE3 Si3932DV-T1-GE3 Vishay Siliconix si3932dv.pdf Description: MOSFET 2N-CH 30V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
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SI4004DY-T1-GE3 SI4004DY-T1-GE3 Vishay Siliconix si4004dy.pdf Description: MOSFET N-CH 20V 12A 8-SOIC
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SI4102DY-T1-GE3 SI4102DY-T1-GE3 Vishay Siliconix si4102dy.pdf Description: MOSFET N-CH 100V 3.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
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SI4104DY-T1-GE3 SI4104DY-T1-GE3 Vishay Siliconix si4104dy.pdf Description: MOSFET N-CH 100V 4.6A 8-SOIC
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SI4124DY-T1-GE3 SI4124DY-T1-GE3 Vishay Siliconix si4124dy.pdf Description: MOSFET N-CH 40V 20.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
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SI4154DY-T1-GE3 SI4154DY-T1-GE3 Vishay Siliconix si4154dy.pdf Description: MOSFET N-CH 40V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 20 V
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SI4156DY-T1-GE3 SI4156DY-T1-GE3 Vishay Siliconix si4156dy.pdf Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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SI4178DY-T1-GE3 SI4178DY-T1-GE3 Vishay Siliconix si4178dy.pdf Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
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SI4190DY-T1-GE3 SI4190DY-T1-GE3 Vishay Siliconix si4190dy.pdf Description: MOSFET N-CH 100V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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SI4204DY-T1-GE3 SI4204DY-T1-GE3 Vishay Siliconix si4204dy.pdf Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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Si4228DY-T1-GE3 Si4228DY-T1-GE3 Vishay Siliconix si4228dy.pdf Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4276DY-T1-GE3 SI4276DY-T1-GE3 Vishay Siliconix si4276dy.pdf Description: MOSFET 2N-CH 30V 8A 8-SOIC
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SI4340CDY-T1-E3 SI4340CDY-T1-E3 Vishay Siliconix si4340cd.pdf Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
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SI4396DY-T1-GE3 SI4396DY-T1-GE3 Vishay Siliconix 74252.pdf Description: MOSFET N-CH 30V 16A 8-SOIC
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SI4401DDY-T1-GE3 SI4401DDY-T1-GE3 Vishay Siliconix si4401dd.pdf Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V
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SI4403BDY-T1-GE3 SI4403BDY-T1-GE3 Vishay Siliconix si4403bd.pdf Description: MOSFET P-CH 20V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 1.35W (Ta)
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
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SI4409DY-T1-GE3 SI4409DY-T1-GE3 Vishay Siliconix si4409dy.pdf Description: MOSFET P-CH 150V 1.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
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SI4418DY-T1-GE3 SI4418DY-T1-GE3 Vishay Siliconix si4418dy.pdf Description: MOSFET N-CH 200V 2.3A 8-SOIC
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SI4434DY-T1-GE3 SI4434DY-T1-GE3 Vishay Siliconix si4434dy.pdf Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
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SI4446DY-T1-GE3 SI4446DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 3.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
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SI4447DY-T1-GE3 SI4447DY-T1-GE3 Vishay Siliconix si4447dy.pdf Description: MOSFET P-CH 40V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
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SI4463BDY-T1-GE3 SI4463BDY-T1-GE3 Vishay Siliconix si4463bd.pdf Description: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
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SI4464DY-T1-GE3 SI4464DY-T1-GE3 Vishay Siliconix si4464dy.pdf Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
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SI4465ADY-T1-GE3 SI4465ADY-T1-GE3 Vishay Siliconix si4465ad.pdf Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI4470EY-T1-GE3 SI4470EY-T1-GE3 Vishay Siliconix 71606.pdf Description: MOSFET N-CH 60V 9A 8SO
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SI4472DY-T1-GE3 SI4472DY-T1-GE3 Vishay Siliconix si4472dy.pdf Description: MOSFET N-CH 150V 7.7A 8-SOIC
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SI4483ADY-T1-GE3 SI4483ADY-T1-GE3 Vishay Siliconix si4483ad.pdf Description: MOSFET P-CH 30V 19.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
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SI4484EY-T1-GE3 SI4484EY-T1-GE3 Vishay Siliconix 71189.pdf Description: MOSFET N-CH 100V 4.8A 8-SOIC
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SI4487DY-T1-GE3 SI4487DY-T1-GE3 Vishay Siliconix si4487dy.pdf Description: MOSFET P-CH 30V 11.6A 8-SOIC
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SI4488DY-T1-GE3 SI4488DY-T1-GE3 Vishay Siliconix si4488dy-090512.pdf Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
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SI4490DY-T1-GE3 SI4490DY-T1-GE3 Vishay Siliconix si4490dy.pdf Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
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SI4497DY-T1-GE3 SI4497DY-T1-GE3 Vishay Siliconix si4497dy.pdf Description: MOSFET P-CH 30V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
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SI4500BDY-T1-GE3 SI4500BDY-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 20V 6.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
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SI4501ADY-T1-GE3 SI4501ADY-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
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SI4511DY-T1-GE3 SI4511DY-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 20V 7.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4564DY-T1-GE3 SI4564DY-T1-GE3 Vishay Siliconix si4564dy.pdf Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 6603 Stücke:
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SI4599DY-T1-GE3 SI4599DY-T1-GE3 Vishay Siliconix si4599dy.pdf Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W, 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4620DY-T1-GE3 SI4620DY-T1-GE3 Vishay Siliconix si4620dy.pdf Description: MOSFET N-CH 30V 6A 8-SOIC
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SI4622DY-T1-GE3 SI4622DY-T1-GE3 Vishay Siliconix si4622dy.pdf Description: MOSFET 2N-CH 30V 8A 8-SOIC
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SI4636DY-T1-GE3 SI4636DY-T1-GE3 Vishay Siliconix si4636dy.pdf Description: MOSFET N-CH 30V 17A 8-SOIC
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SI4650DY-T1-E3 SI4650DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4654DY-T1-GE3 SI4654DY-T1-GE3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
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SI4666DY-T1-GE3 SI4666DY-T1-GE3 Vishay Siliconix si4666dy.pdf Description: MOSFET N-CH 25V 16.5A 8-SOIC
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SI4670DY-T1-E3 SI4670DY-T1-E3 Vishay Siliconix si4670dy.pdf Description: MOSFET 2N-CH 25V 8A 8SOIC
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SI4778DY-T1-GE3 SI4778DY-T1-GE3 Vishay Siliconix si4778dy.pdf Description: MOSFET N-CH 25V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
Produkt ist nicht verfügbar
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SI4812BDY-T1-GE3 SI4812BDY-T1-GE3 Vishay Siliconix 73038.pdf Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Produkt ist nicht verfügbar
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SI4830CDY-T1-GE3 SI4830CDY-T1-GE3 Vishay Siliconix si4830cd.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4838BDY-T1-GE3 SI4838BDY-T1-GE3 Vishay Siliconix si4838bd.pdf Description: MOSFET N-CH 12V 34A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
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10+2.64 EUR
100+1.88 EUR
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SI4848DY-T1-GE3 SI4848DY-T1-GE3 Vishay Siliconix si4848dy.pdf Description: MOSFET N-CH 150V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
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10+2.52 EUR
100+1.88 EUR
500+1.55 EUR
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SI4850EY-T1-GE3 SI4850EY-T1-GE3 Vishay Siliconix 71146.pdf Description: MOSFET N-CH 60V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
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100+2.09 EUR
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SI4896DY-T1-GE3 SI4896DY-T1-GE3 Vishay Siliconix 71300.pdf Description: MOSFET N-CH 80V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
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SI4904DY-T1-GE3 SI4904DY-T1-GE3 Vishay Siliconix si4904dy.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4906DY-T1-GE3 SI4906DY-T1-GE3 Vishay Siliconix 73867.pdf Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4910DY-T1-GE3 SI4910DY-T1-GE3 Vishay Siliconix si4910dy.pdf Description: MOSFET 2N-CH 40V 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
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SI4913DY-T1-GE3 SI4913DY-T1-GE3 Vishay Siliconix 71997.pdf Description: MOSFET 2P-CH 20V 7.1A 8-SOIC
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SI4914BDY-T1-GE3 SI4914BDY-T1-GE3 Vishay Siliconix si4914bd.pdf Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
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SI4931DY-T1-GE3 SI4931DY-T1-GE3 Vishay Siliconix si4931dy.pdf Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
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Si3588DV-T1-GE3
Si3588DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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SI3805DV-T1-GE3 si3805dv.pdf
SI3805DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta), 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Produkt ist nicht verfügbar
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Si3900DV-T1-GE3 si3900dv.pdf
Si3900DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
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Si3932DV-T1-GE3 si3932dv.pdf
Si3932DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 26700 Stücke:
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13+1.71 EUR
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SI4004DY-T1-GE3 si4004dy.pdf
SI4004DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A 8-SOIC
Produkt ist nicht verfügbar
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SI4102DY-T1-GE3 si4102dy.pdf
SI4102DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V
Produkt ist nicht verfügbar
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SI4104DY-T1-GE3 si4104dy.pdf
SI4104DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.6A 8-SOIC
Produkt ist nicht verfügbar
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SI4124DY-T1-GE3 si4124dy.pdf
SI4124DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
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SI4154DY-T1-GE3 si4154dy.pdf
SI4154DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 20 V
auf Bestellung 11334 Stücke:
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SI4156DY-T1-GE3 si4156dy.pdf
SI4156DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 4627 Stücke:
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10+2.28 EUR
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SI4178DY-T1-GE3 si4178dy.pdf
SI4178DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
auf Bestellung 6636 Stücke:
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SI4190DY-T1-GE3 si4190dy.pdf
SI4190DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
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SI4204DY-T1-GE3 si4204dy.pdf
SI4204DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7985 Stücke:
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5+5.15 EUR
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Si4228DY-T1-GE3 si4228dy.pdf
Si4228DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 8721 Stücke:
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SI4276DY-T1-GE3 si4276dy.pdf
SI4276DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
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SI4340CDY-T1-E3 si4340cd.pdf
SI4340CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
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SI4396DY-T1-GE3 74252.pdf
SI4396DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
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SI4401DDY-T1-GE3 si4401dd.pdf
SI4401DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V
auf Bestellung 51633 Stücke:
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SI4403BDY-T1-GE3 si4403bd.pdf
SI4403BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 1.35W (Ta)
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Produkt ist nicht verfügbar
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SI4409DY-T1-GE3 si4409dy.pdf
SI4409DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
Produkt ist nicht verfügbar
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SI4418DY-T1-GE3 si4418dy.pdf
SI4418DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.3A 8-SOIC
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SI4434DY-T1-GE3 si4434dy.pdf
SI4434DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 2365 Stücke:
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SI4446DY-T1-GE3
SI4446DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Produkt ist nicht verfügbar
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SI4447DY-T1-GE3 si4447dy.pdf
SI4447DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
auf Bestellung 4900 Stücke:
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14+1.55 EUR
16+1.33 EUR
100+0.93 EUR
500+0.77 EUR
1000+0.65 EUR
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SI4463BDY-T1-GE3 si4463bd.pdf
SI4463BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI4464DY-T1-GE3 si4464dy.pdf
SI4464DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2111 Stücke:
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10+2.68 EUR
100+1.82 EUR
500+1.45 EUR
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SI4465ADY-T1-GE3 si4465ad.pdf
SI4465ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI4470EY-T1-GE3 71606.pdf
SI4470EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9A 8SO
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SI4472DY-T1-GE3 si4472dy.pdf
SI4472DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
auf Bestellung 1692 Stücke:
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SI4483ADY-T1-GE3 si4483ad.pdf
SI4483ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 20424 Stücke:
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7+3.17 EUR
11+2.01 EUR
100+1.34 EUR
500+1.07 EUR
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SI4484EY-T1-GE3 71189.pdf
SI4484EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.8A 8-SOIC
Produkt ist nicht verfügbar
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SI4487DY-T1-GE3 si4487dy.pdf
SI4487DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.6A 8-SOIC
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SI4488DY-T1-GE3 si4488dy-090512.pdf
SI4488DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
auf Bestellung 5478 Stücke:
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4+5.59 EUR
10+3.89 EUR
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SI4490DY-T1-GE3 si4490dy.pdf
SI4490DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 2415 Stücke:
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4+5.38 EUR
10+3.57 EUR
100+2.69 EUR
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SI4497DY-T1-GE3 si4497dy.pdf
SI4497DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
auf Bestellung 13516 Stücke:
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5+4.36 EUR
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100+2.08 EUR
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SI4500BDY-T1-GE3
SI4500BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4501ADY-T1-GE3
SI4501ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
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SI4511DY-T1-GE3
SI4511DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 7.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4564DY-T1-GE3 si4564dy.pdf
SI4564DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 6603 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.21 EUR
100+1.5 EUR
500+1.19 EUR
1000+1.11 EUR
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SI4599DY-T1-GE3 si4599dy.pdf
SI4599DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W, 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3057 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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SI4620DY-T1-GE3 si4620dy.pdf
SI4620DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
auf Bestellung 268 Stücke:
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SI4622DY-T1-GE3 si4622dy.pdf
SI4622DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Produkt ist nicht verfügbar
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SI4636DY-T1-GE3 si4636dy.pdf
SI4636DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
auf Bestellung 211 Stücke:
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SI4650DY-T1-E3
SI4650DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4654DY-T1-GE3 si4654dy.pdf
SI4654DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
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SI4666DY-T1-GE3 si4666dy.pdf
SI4666DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
auf Bestellung 9639 Stücke:
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SI4670DY-T1-E3 si4670dy.pdf
SI4670DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Produkt ist nicht verfügbar
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SI4778DY-T1-GE3 si4778dy.pdf
SI4778DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
Produkt ist nicht verfügbar
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SI4812BDY-T1-GE3 73038.pdf
SI4812BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Produkt ist nicht verfügbar
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SI4830CDY-T1-GE3 si4830cd.pdf
SI4830CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4838BDY-T1-GE3 si4838bd.pdf
SI4838BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 34A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
auf Bestellung 15510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.02 EUR
10+2.64 EUR
100+1.88 EUR
500+1.5 EUR
1000+1.38 EUR
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SI4848DY-T1-GE3 si4848dy.pdf
SI4848DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 6770 Stücke:
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AnzahlPrivatkunde
7+3.31 EUR
10+2.52 EUR
100+1.88 EUR
500+1.55 EUR
1000+1.33 EUR
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SI4850EY-T1-GE3 71146.pdf
SI4850EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
auf Bestellung 2873 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+2.87 EUR
100+2.09 EUR
500+1.76 EUR
1000+1.62 EUR
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SI4896DY-T1-GE3 71300.pdf
SI4896DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
auf Bestellung 3752 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
10+3.67 EUR
100+2.81 EUR
500+2.49 EUR
1000+2.38 EUR
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SI4904DY-T1-GE3 si4904dy.pdf
SI4904DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1625 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
10+3.7 EUR
100+2.56 EUR
500+2.07 EUR
1000+1.9 EUR
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SI4906DY-T1-GE3 73867.pdf
SI4906DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI4910DY-T1-GE3 si4910dy.pdf
SI4910DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4913DY-T1-GE3 71997.pdf
SI4913DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 7.1A 8-SOIC
Produkt ist nicht verfügbar
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SI4914BDY-T1-GE3 si4914bd.pdf
SI4914BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SI4931DY-T1-GE3 si4931dy.pdf
SI4931DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
auf Bestellung 2034 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
10+2.7 EUR
100+1.83 EUR
500+1.46 EUR
1000+1.34 EUR
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