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293D475X9025C2TE3 293D475X9025C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
auf Bestellung 4588 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
188+0.38 EUR
264+0.27 EUR
317+0.23 EUR
388+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 148
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SIHA240N60E-GE3 VISHAY siha240n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHD240N60E-GE3 VISHAY sihd240n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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293D476X0016D2TE3 293D476X0016D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
Mindestbestellmenge: 55
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293D476X9010B2TE3 293D476X9010B2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 2509 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
205+0.35 EUR
244+0.29 EUR
424+0.17 EUR
511+0.14 EUR
Mindestbestellmenge: 167
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293D476X9010C2TE3 293D476X9010C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 5919 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
210+0.34 EUR
334+0.21 EUR
417+0.17 EUR
506+0.14 EUR
Mindestbestellmenge: 167
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293D476X9016C2TE3 293D476X9016C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
auf Bestellung 4656 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
228+0.31 EUR
336+0.21 EUR
371+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 120
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293D476X9016D2TE3 293D476X9016D2TE3 VISHAY 293d.pdf description Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 2443 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
185+0.39 EUR
231+0.31 EUR
253+0.28 EUR
500+0.23 EUR
1000+0.22 EUR
1500+0.21 EUR
Mindestbestellmenge: 136
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293D476X9020D2TE3 293D476X9020D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
146+0.49 EUR
180+0.4 EUR
197+0.36 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 99
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293D476X96R3B2TE3 293D476X96R3B2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
auf Bestellung 3767 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
290+0.25 EUR
348+0.21 EUR
376+0.19 EUR
500+0.15 EUR
Mindestbestellmenge: 228
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293D477X96R3D2TE3 293D477X96R3D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
Case: D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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1N5408-E3/54 1N5408-E3/54 VISHAY 1n5400_08.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
116+0.62 EUR
162+0.44 EUR
188+0.38 EUR
500+0.27 EUR
1000+0.24 EUR
1400+0.22 EUR
Mindestbestellmenge: 80
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2W10G-E4/51 2W10G-E4/51 VISHAY 2w005g.pdf Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Kind of package: bulk
Electrical mounting: THT
Case: WOG
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Type of bridge rectifier: single-phase
auf Bestellung 3734 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
124+0.58 EUR
139+0.52 EUR
166+0.43 EUR
500+0.35 EUR
1000+0.31 EUR
3000+0.28 EUR
Mindestbestellmenge: 80
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MAL214699111E3 MAL214699111E3 VISHAY 146cti.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Operating temperature: -40...125°C
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Body dimensions: 16x16x21mm
Operating voltage: 50V DC
Tolerance: ±20%
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.02 EUR
17+4.22 EUR
20+3.76 EUR
40+2.73 EUR
50+2.62 EUR
Mindestbestellmenge: 15
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MAL204831102E3 MAL204831102E3 VISHAY 048rml.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 1mF
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Tolerance: ±20%
Operating voltage: 50V DC
Service life: 4000h
Manufacturer series: MAL2048
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.36 EUR
28+2.6 EUR
50+2.1 EUR
Mindestbestellmenge: 22
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MAL204861102E3 MAL204861102E3 VISHAY 048rml.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
41+1.77 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 25
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GRC00JE1021H00L GRC00JE1021H00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
110+0.65 EUR
154+0.47 EUR
181+0.4 EUR
Mindestbestellmenge: 49
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MAL215031102E3 MAL215031102E3 VISHAY 150rmi.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Diameter: 16mm
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Height: 25mm
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
33+2.23 EUR
35+2.04 EUR
38+1.92 EUR
50+1.83 EUR
100+1.77 EUR
Mindestbestellmenge: 23
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ZRC00JG1021H00L ZRC00JG1021H00L VISHAY ZRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
78+0.93 EUR
99+0.72 EUR
150+0.65 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
SI7852DP-T1-GE3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
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SS26-E3/52T SS26-E3/52T VISHAY SS24-E3-52T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
auf Bestellung 7121 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
288+0.25 EUR
353+0.2 EUR
388+0.18 EUR
439+0.16 EUR
500+0.15 EUR
750+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 173
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SS26HE3_A/H SS26HE3_A/H VISHAY ss22.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
178+0.4 EUR
205+0.35 EUR
252+0.28 EUR
Mindestbestellmenge: 136
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SS26S-E3/5AT SS26S-E3/5AT VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Produkt ist nicht verfügbar
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SS26S-E3/61T SS26S-E3/61T VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
293+0.24 EUR
341+0.21 EUR
371+0.19 EUR
Mindestbestellmenge: 228
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SISS26DN-T1-GE3 VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 VISHAY siss26ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600 VISHAY TSSS2600.pdf Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 4465 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
152+0.47 EUR
174+0.41 EUR
191+0.37 EUR
209+0.34 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 117
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IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
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IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 683 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
35+2.04 EUR
42+1.73 EUR
50+1.5 EUR
100+1.29 EUR
250+1.1 EUR
500+1 EUR
Mindestbestellmenge: 29
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IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
57+1.27 EUR
70+1.03 EUR
100+0.99 EUR
250+0.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-05-E3-08 VISHAY BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE27CA-E3/54 1.5KE27CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1181 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
204+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 186
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1N5822-E3/54 1N5822-E3/54 VISHAY 1n5820-22.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
291+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP BYV26C-TAP VISHAY byv26.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
auf Bestellung 7728 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
160+0.45 EUR
200+0.36 EUR
216+0.33 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.24 EUR
2500+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TR BYV26C-TR VISHAY byv26.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
266+0.27 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE400A-E3/54 1.5KE400A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
118+0.61 EUR
Mindestbestellmenge: 91
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IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
40+1.8 EUR
45+1.6 EUR
50+1.47 EUR
100+1.34 EUR
250+1.2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3567 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
54+1.33 EUR
64+1.13 EUR
65+1.1 EUR
100+1.03 EUR
250+0.94 EUR
500+0.89 EUR
1000+0.83 EUR
2000+0.79 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740STRLPBF IRF740STRLPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18CA-E3/54 1.5KE18CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
157+0.46 EUR
166+0.43 EUR
176+0.41 EUR
250+0.37 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE180CA-E3/54 1.5KE180CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
116+0.62 EUR
158+0.45 EUR
500+0.37 EUR
1000+0.34 EUR
1400+0.32 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18A-E3/54 1.5KE18A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6KE200A-E3/54 P6KE200A-E3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: 13 inch reel
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Technology: TransZorb®
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2.2A
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/54 1N4937-E3/54 VISHAY 1n400x.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
625+0.11 EUR
687+0.1 EUR
811+0.088 EUR
1021+0.07 EUR
1147+0.062 EUR
2000+0.055 EUR
2500+0.052 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1N4937-E3/73 VISHAY 1n4933.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
auf Bestellung 2593 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
625+0.11 EUR
789+0.091 EUR
942+0.076 EUR
1021+0.07 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/54 1N5817-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3045 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
295+0.24 EUR
321+0.22 EUR
443+0.16 EUR
516+0.14 EUR
582+0.12 EUR
1000+0.11 EUR
2000+0.094 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1N5817-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7354 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/54 1N5819-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
auf Bestellung 4191 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
278+0.26 EUR
319+0.22 EUR
451+0.16 EUR
596+0.12 EUR
1000+0.11 EUR
2000+0.097 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1N5819-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-E3-08
+1
 		BAV99-E3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1324 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
550+0.13 EUR
837+0.086 EUR
1324+0.054 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-HE3-08 BAV99-HE3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GP-E3/54 1N4007GP-E3/54 VISHAY 1n4001gp.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 7244 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
249+0.29 EUR
275+0.26 EUR
327+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
357B0102MXB251S22 357B0102MXB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Mechanical durability: 10000000 cycles
Shaft surface: smooth
Potentiometer features: without limiters
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Linearity tolerance: ±2%
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.44 EUR
3+37.88 EUR
10+34.53 EUR
25+32.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
293D475X9025C2TE3 293d.pdf
293D475X9025C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
auf Bestellung 4588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
188+0.38 EUR
264+0.27 EUR
317+0.23 EUR
388+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 148
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SIHA240N60E-GE3 siha240n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHD240N60E-GE3 sihd240n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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293D476X0016D2TE3 293d.pdf
293D476X0016D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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293D476X9010B2TE3 293d.pdf
293D476X9010B2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 2509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
205+0.35 EUR
244+0.29 EUR
424+0.17 EUR
511+0.14 EUR
Mindestbestellmenge: 167
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293D476X9010C2TE3 293d.pdf
293D476X9010C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 5919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
210+0.34 EUR
334+0.21 EUR
417+0.17 EUR
506+0.14 EUR
Mindestbestellmenge: 167
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293D476X9016C2TE3 293d.pdf
293D476X9016C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
auf Bestellung 4656 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
228+0.31 EUR
336+0.21 EUR
371+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
293D476X9016D2TE3 description 293d.pdf
293D476X9016D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 2443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
185+0.39 EUR
231+0.31 EUR
253+0.28 EUR
500+0.23 EUR
1000+0.22 EUR
1500+0.21 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
293D476X9020D2TE3 293d.pdf
293D476X9020D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
146+0.49 EUR
180+0.4 EUR
197+0.36 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
293D476X96R3B2TE3 293d.pdf
293D476X96R3B2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
auf Bestellung 3767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
290+0.25 EUR
348+0.21 EUR
376+0.19 EUR
500+0.15 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
293D477X96R3D2TE3 293d.pdf
293D477X96R3D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
Case: D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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1N5408-E3/54 1n5400_08.pdf
1N5408-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
116+0.62 EUR
162+0.44 EUR
188+0.38 EUR
500+0.27 EUR
1000+0.24 EUR
1400+0.22 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
2W10G-E4/51 2w005g.pdf
2W10G-E4/51
Hersteller: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Kind of package: bulk
Electrical mounting: THT
Case: WOG
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Type of bridge rectifier: single-phase
auf Bestellung 3734 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
124+0.58 EUR
139+0.52 EUR
166+0.43 EUR
500+0.35 EUR
1000+0.31 EUR
3000+0.28 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
MAL214699111E3 146cti.pdf
MAL214699111E3
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Operating temperature: -40...125°C
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Body dimensions: 16x16x21mm
Operating voltage: 50V DC
Tolerance: ±20%
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
17+4.22 EUR
20+3.76 EUR
40+2.73 EUR
50+2.62 EUR
Mindestbestellmenge: 15
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MAL204831102E3 048rml.pdf
MAL204831102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 1mF
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Tolerance: ±20%
Operating voltage: 50V DC
Service life: 4000h
Manufacturer series: MAL2048
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
28+2.6 EUR
50+2.1 EUR
Mindestbestellmenge: 22
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MAL204861102E3 048rml.pdf
MAL204861102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
41+1.77 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 25
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GRC00JE1021H00L GRC.pdf
GRC00JE1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
110+0.65 EUR
154+0.47 EUR
181+0.4 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
MAL215031102E3 150rmi.pdf
MAL215031102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Diameter: 16mm
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Height: 25mm
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
33+2.23 EUR
35+2.04 EUR
38+1.92 EUR
50+1.83 EUR
100+1.77 EUR
Mindestbestellmenge: 23
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ZRC00JG1021H00L ZRC.pdf
ZRC00JG1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
78+0.93 EUR
99+0.72 EUR
150+0.65 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
SI7852DP-T1-GE3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
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SS26-E3/52T SS24-E3-52T.pdf
SS26-E3/52T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
auf Bestellung 7121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
288+0.25 EUR
353+0.2 EUR
388+0.18 EUR
439+0.16 EUR
500+0.15 EUR
750+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 173
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SS26HE3_A/H ss22.pdf
SS26HE3_A/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
178+0.4 EUR
205+0.35 EUR
252+0.28 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
SS26S-E3/5AT ss26s.pdf
SS26S-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Produkt ist nicht verfügbar
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SS26S-E3/61T ss26s.pdf
SS26S-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
auf Bestellung 1024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
293+0.24 EUR
341+0.21 EUR
371+0.19 EUR
Mindestbestellmenge: 228
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SISS26DN-T1-GE3 siss26dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 siss26ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600.pdf
TSSS2600
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 4465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
152+0.47 EUR
174+0.41 EUR
191+0.37 EUR
209+0.34 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 117
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IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 683 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
35+2.04 EUR
42+1.73 EUR
50+1.5 EUR
100+1.29 EUR
250+1.1 EUR
500+1 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
57+1.27 EUR
70+1.03 EUR
100+0.99 EUR
250+0.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE27CA-E3/54 15ke_Ser.pdf
1.5KE27CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
204+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
1N5822-E3/54 1n5820-22.pdf
1N5822-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
291+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
auf Bestellung 7728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
160+0.45 EUR
200+0.36 EUR
216+0.33 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.24 EUR
2500+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TR description byv26.pdf
BYV26C-TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
266+0.27 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE400A-E3/54 15ke_Ser.pdf
1.5KE400A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
118+0.61 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
40+1.8 EUR
45+1.6 EUR
50+1.47 EUR
100+1.34 EUR
250+1.2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
54+1.33 EUR
64+1.13 EUR
65+1.1 EUR
100+1.03 EUR
250+0.94 EUR
500+0.89 EUR
1000+0.83 EUR
2000+0.79 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF740STRLPBF IRF740SPBF.pdf
IRF740STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18CA-E3/54 15ke_Ser.pdf
1.5KE18CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
157+0.46 EUR
166+0.43 EUR
176+0.41 EUR
250+0.37 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE180CA-E3/54 15ke_Ser.pdf
1.5KE180CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
116+0.62 EUR
158+0.45 EUR
500+0.37 EUR
1000+0.34 EUR
1400+0.32 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE18A-E3/54 15ke_Ser.pdf
1.5KE18A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6KE200A-E3/54 p6ke.pdf
P6KE200A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Kind of package: 13 inch reel
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Technology: TransZorb®
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 2.2A
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/54 1n400x.pdf
1N4937-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
625+0.11 EUR
687+0.1 EUR
811+0.088 EUR
1021+0.07 EUR
1147+0.062 EUR
2000+0.055 EUR
2500+0.052 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1n4933.pdf
1N4937-E3/73
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
auf Bestellung 2593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
789+0.091 EUR
942+0.076 EUR
1021+0.07 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/54 1n5817-19.pdf
1N5817-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3045 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
295+0.24 EUR
321+0.22 EUR
443+0.16 EUR
516+0.14 EUR
582+0.12 EUR
1000+0.11 EUR
2000+0.094 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1n5817-19.pdf
1N5817-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/54 1n5817-19.pdf
1N5819-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
auf Bestellung 4191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
278+0.26 EUR
319+0.22 EUR
451+0.16 EUR
596+0.12 EUR
1000+0.11 EUR
2000+0.097 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1n5817-19.pdf
1N5819-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-E3-08 bav99.pdf
BAV99-E3-08
+1
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
550+0.13 EUR
837+0.086 EUR
1324+0.054 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV99-HE3-08 bav99.pdf
BAV99-HE3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GP-E3/54 1n4001gp.pdf
1N4007GP-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 7244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
249+0.29 EUR
275+0.26 EUR
327+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
357B0102MXB251S22 357.pdf
357B0102MXB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Mechanical durability: 10000000 cycles
Shaft surface: smooth
Potentiometer features: without limiters
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Linearity tolerance: ±2%
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.44 EUR
3+37.88 EUR
10+34.53 EUR
25+32.76 EUR
Mindestbestellmenge: 2
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