| Foto | Bezeichnung | Hersteller | Beschreibung |
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP240PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Temperature coefficient: 100ppm/°C Number of mechanical turns: 15 ±5 Operating voltage: 250V Manufacturer series: T63XB Track material: cermet Kind of potentiometer: multiturn |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T63YB Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Track material: cermet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93XB Terminal pitch: 2.5x2.5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Engineering PN: 64Z; 67Z; 3296Z Track material: cermet |
auf Bestellung 529 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Manufacturer series: T93YB Terminal pitch: 2.5x2.5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Engineering PN: 64Y; 67Y; 3296Y Track material: cermet |
auf Bestellung 6389 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 446 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.5V |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 13 inch reel Leakage current: 20mA Max. forward voltage: 0.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002K-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
auf Bestellung 4905 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 13 inch reel Leakage current: 5mA Quantity in set/package: 7500pcs. |
auf Bestellung 2829 Stücke: Lieferzeit 14-21 Tag (e) |
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SS16-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
auf Bestellung 11441 Stücke: Lieferzeit 14-21 Tag (e) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Application: automotive industry |
auf Bestellung 5544 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 3003 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
auf Bestellung 24015 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF530PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC |
auf Bestellung 2721 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF530SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 26nC |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 4960 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MUR460-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns Quantity in set/package: 1400pcs. |
auf Bestellung 1138 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Quantity in set/package: 5500pcs. |
auf Bestellung 10149 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF |
auf Bestellung 16775 Stücke: Lieferzeit 14-21 Tag (e) |
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293D476X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
auf Bestellung 807 Stücke: Lieferzeit 14-21 Tag (e) |
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293D476X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
auf Bestellung 7972 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206Y104KXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
auf Bestellung 18378 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4148-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: Ammo Pack Max. forward impulse current: 2A Case: DO35 Reverse recovery time: 8ns Max. load current: 0.5A |
auf Bestellung 43497 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHJ7N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
CRCW12060000Z0TABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C Resistance: 0Ω Tolerance: ±5% Power: 0.25W Mounting: SMD Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Type of resistor: thick film |
auf Bestellung 101540 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
auf Bestellung 8420 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
LL4148-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Quantity in set/package: 2500pcs. |
auf Bestellung 673216 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148-GS18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Quantity in set/package: 10000pcs. |
auf Bestellung 2193 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00JS4721E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x31.5mm |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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293D106X0050E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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293D106X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
auf Bestellung 5386 Stücke: Lieferzeit 14-21 Tag (e) |
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293D106X9050E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X0050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
auf Bestellung 327 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Roll diameter max.: 178mm Case - inch: 2917 Case - mm: 7343 Case: D |
auf Bestellung 1978 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9025B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case - inch: 1411 Case - mm: 3528 Operating temperature: -55...125°C Case: B Manufacturer series: Tantamount |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case - inch: 2312 Case - mm: 6032 Operating temperature: -55...125°C Case: C Roll diameter max.: 178mm Manufacturer series: Tantamount |
auf Bestellung 4588 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAT54S-HE3-08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 705+ | 0.1 EUR |
| 1115+ | 0.064 EUR |
| 1265+ | 0.057 EUR |
| IRFP240PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T63XB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Manufacturer series: T63XB
Track material: cermet
Kind of potentiometer: multiturn
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Temperature coefficient: 100ppm/°C
Number of mechanical turns: 15 ±5
Operating voltage: 250V
Manufacturer series: T63XB
Track material: cermet
Kind of potentiometer: multiturn
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| T63YB103KT20 |
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Hersteller: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Track material: cermet
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T63YB
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Track material: cermet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T93XB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93XB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Z; 67Z; 3296Z
Track material: cermet
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.17 EUR |
| 100+ | 1.13 EUR |
| T93YB103KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Manufacturer series: T93YB
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Engineering PN: 64Y; 67Y; 3296Y
Track material: cermet
auf Bestellung 6389 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 46+ | 1.57 EUR |
| 51+ | 1.42 EUR |
| 59+ | 1.22 EUR |
| 65+ | 1.1 EUR |
| 100+ | 1.02 EUR |
| VS-36MT60 |
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Hersteller: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.39 EUR |
| SIHB12N60E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB12N60ET1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF12N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP12N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP22N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.48 EUR |
| 15+ | 4.86 EUR |
| 25+ | 4.66 EUR |
| 50+ | 4.49 EUR |
| 100+ | 4.15 EUR |
| 125+ | 4.03 EUR |
| IRFP250PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.78 EUR |
| 22+ | 3.37 EUR |
| 25+ | 2.93 EUR |
| 29+ | 2.47 EUR |
| 50+ | 2.39 EUR |
| 100+ | 2.3 EUR |
| 125+ | 2.27 EUR |
| IRFP260PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.28 EUR |
| 20+ | 3.69 EUR |
| 25+ | 3.42 EUR |
| 50+ | 3.2 EUR |
| 100+ | 2.99 EUR |
| 125+ | 2.95 EUR |
| 375+ | 2.75 EUR |
| IRFP264PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE6.8CA-E3/54 |
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Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 130+ | 0.55 EUR |
| 174+ | 0.41 EUR |
| 250+ | 0.36 EUR |
| SS34-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 152+ | 0.47 EUR |
| SS34-E3/9AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 20mA
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 20mA
Max. forward voltage: 0.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR20100CT-E3/4W |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
auf Bestellung 742 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.12 EUR |
| 70+ | 1.03 EUR |
| 100+ | 0.94 EUR |
| 2N7002K-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 2N7002K-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 4905 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 355+ | 0.2 EUR |
| 513+ | 0.14 EUR |
| 601+ | 0.12 EUR |
| 842+ | 0.085 EUR |
| 1000+ | 0.074 EUR |
| 3000+ | 0.061 EUR |
| SIHB15N65E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF15N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP15N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS16-E3/5AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
auf Bestellung 2829 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 575+ | 0.12 EUR |
| 832+ | 0.086 EUR |
| 1058+ | 0.068 EUR |
| 1112+ | 0.064 EUR |
| SS16-E3/61T | ![]() |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
auf Bestellung 11441 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 353+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| 479+ | 0.15 EUR |
| 540+ | 0.13 EUR |
| 752+ | 0.095 EUR |
| 1000+ | 0.079 EUR |
| 1800+ | 0.071 EUR |
| SS16HE3_B/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
auf Bestellung 5544 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 410+ | 0.17 EUR |
| 435+ | 0.16 EUR |
| 516+ | 0.14 EUR |
| 575+ | 0.12 EUR |
| 676+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| IRF840PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 3003 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 44+ | 1.63 EUR |
| 53+ | 1.37 EUR |
| 75+ | 0.96 EUR |
| 100+ | 0.93 EUR |
| 200+ | 0.89 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.82 EUR |
| 2000+ | 0.79 EUR |
| BZX55B10-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
auf Bestellung 24015 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1370+ | 0.052 EUR |
| 2305+ | 0.031 EUR |
| 2605+ | 0.027 EUR |
| 2750+ | 0.026 EUR |
| GRC00JG3321E00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 115+ | 0.62 EUR |
| 143+ | 0.5 EUR |
| 157+ | 0.46 EUR |
| IRF530PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
auf Bestellung 2721 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 102+ | 0.7 EUR |
| 127+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.49 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.42 EUR |
| IRF530SPBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 50+ | 1.44 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.96 EUR |
| BZX55C10-TAP | ![]() |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 4960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 1087+ | 0.066 EUR |
| 1155+ | 0.062 EUR |
| 1226+ | 0.058 EUR |
| 1401+ | 0.051 EUR |
| BZX55C12-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR460-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
auf Bestellung 1138 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 1N4007-E3/54 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
auf Bestellung 10149 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 556+ | 0.13 EUR |
| 704+ | 0.1 EUR |
| 975+ | 0.073 EUR |
| 1147+ | 0.062 EUR |
| 2000+ | 0.052 EUR |
| 2500+ | 0.049 EUR |
| 5500+ | 0.038 EUR |
| 1N4007-E3/73 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
auf Bestellung 16775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 404+ | 0.18 EUR |
| 435+ | 0.16 EUR |
| 831+ | 0.086 EUR |
| 989+ | 0.072 EUR |
| 1062+ | 0.067 EUR |
| 3000+ | 0.059 EUR |
| 6000+ | 0.053 EUR |
| 9000+ | 0.05 EUR |
| 293D476X0025D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 807 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 101+ | 0.71 EUR |
| 114+ | 0.63 EUR |
| 120+ | 0.6 EUR |
| 200+ | 0.57 EUR |
| 500+ | 0.55 EUR |
| 293D476X9025D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 7972 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 121+ | 0.59 EUR |
| 157+ | 0.46 EUR |
| 174+ | 0.41 EUR |
| 250+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.34 EUR |
| VJ1206Y104KXACW1BC |
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Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 18378 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 2632+ | 0.027 EUR |
| 2977+ | 0.024 EUR |
| 3165+ | 0.023 EUR |
| 3624+ | 0.02 EUR |
| 3817+ | 0.019 EUR |
| 4000+ | 0.018 EUR |
| 4167+ | 0.017 EUR |
| 12000+ | 0.016 EUR |
| 1N4148-TAP |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
auf Bestellung 43497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1112+ | 0.064 EUR |
| 1799+ | 0.04 EUR |
| 2488+ | 0.029 EUR |
| 2825+ | 0.025 EUR |
| 3206+ | 0.022 EUR |
| 10000+ | 0.017 EUR |
| 20000+ | 0.015 EUR |
| 30000+ | 0.014 EUR |
| SIHA20N50E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB20N50E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG20N50E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 18+ | 4.18 EUR |
| 20+ | 3.72 EUR |
| 22+ | 3.27 EUR |
| 27+ | 2.69 EUR |
| 100+ | 2.43 EUR |
| SiHH20N50E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP20N50E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHJ7N65E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW12060000Z0TABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C
Resistance: 0Ω
Tolerance: ±5%
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C
Resistance: 0Ω
Tolerance: ±5%
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Type of resistor: thick film
auf Bestellung 101540 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 2640+ | 0.027 EUR |
| 11140+ | 0.0064 EUR |
| 14330+ | 0.005 EUR |
| 19310+ | 0.0037 EUR |
| 20090+ | 0.0036 EUR |
| 50000+ | 0.0035 EUR |
| 100000+ | 0.0034 EUR |
| BAV70-E3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 8420 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 575+ | 0.12 EUR |
| 960+ | 0.075 EUR |
| 1283+ | 0.056 EUR |
| 1534+ | 0.047 EUR |
| 3000+ | 0.036 EUR |
| 6000+ | 0.031 EUR |
| BAV70-G3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LL4148-GS08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
auf Bestellung 673216 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1563+ | 0.046 EUR |
| 2632+ | 0.027 EUR |
| 4630+ | 0.015 EUR |
| 5209+ | 0.014 EUR |
| 6025+ | 0.012 EUR |
| 6667+ | 0.011 EUR |
| 10000+ | 0.0096 EUR |
| 12500+ | 0.0093 EUR |
| LL4148-GS18 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
auf Bestellung 2193 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 834+ | 0.086 EUR |
| 1667+ | 0.043 EUR |
| 2193+ | 0.033 EUR |
| GRC00JS4721E00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.05 EUR |
| 115+ | 0.62 EUR |
| 149+ | 0.48 EUR |
| 151+ | 0.47 EUR |
| 293D106X0050E2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 100+ | 1.12 EUR |
| 293D106X9050D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
auf Bestellung 5386 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 92+ | 0.78 EUR |
| 105+ | 0.68 EUR |
| 112+ | 0.64 EUR |
| 250+ | 0.59 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.52 EUR |
| 293D106X9050E2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 67+ | 1.08 EUR |
| 85+ | 0.85 EUR |
| 100+ | 0.78 EUR |
| 200+ | 0.73 EUR |
| 293D475X0050D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 293D475X9050D2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Roll diameter max.: 178mm
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Roll diameter max.: 178mm
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 1978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 84+ | 0.86 EUR |
| 108+ | 0.66 EUR |
| 121+ | 0.59 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
| 293D475X9025B2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Operating temperature: -55...125°C
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Operating temperature: -55...125°C
Case: B
Manufacturer series: Tantamount
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 293D475X9025C2TE3 |
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Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
auf Bestellung 4588 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 188+ | 0.38 EUR |
| 264+ | 0.27 EUR |
| 317+ | 0.23 EUR |
| 388+ | 0.18 EUR |
| 500+ | 0.16 EUR |




























