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5.0SMDJ43CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BTA204-600C,127 BTA204-600C,127 WeEn Semiconductors bta204-600c.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E,127 WeEn Semiconductors bta204-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600F,127 BTA204-600F,127 WeEn Semiconductors bta204-600f.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204W-600E,135 BTA204W-600E,135 WeEn Semiconductors PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F,135 WeEn Semiconductors BTA204W-600F.pdf bta204w-600f.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C,135 WeEn Semiconductors bta204w-600c.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600D,135 BTA204W-600D,135 WeEn Semiconductors bta204w-600d.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BYC10B-600,118 BYC10B-600,118 WeEn Semiconductors BYC10B-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
auf Bestellung 557 Stücke:
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65+1.10 EUR
86+0.84 EUR
106+0.68 EUR
117+0.61 EUR
124+0.58 EUR
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BYC10DX-600,127 BYC10DX-600,127 WeEn Semiconductors BYC10DX-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
auf Bestellung 68 Stücke:
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67+1.08 EUR
68+1.06 EUR
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BYC10D-600,127 BYC10D-600,127 WeEn Semiconductors BYC10D-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
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BTA425Y-800BTQ BTA425Y-800BTQ WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
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WNSC2M150120B76J WeEn Semiconductors WNSC2M150120B76J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 20.3A; Idm: 58A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20.3A
Pulsed drain current: 58A
Power dissipation: 231W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M150120W6Q WeEn Semiconductors WNSC2M150120W6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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SM8S33CAJ WeEn Semiconductors SM8S_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
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BTA206X-800ET,127 BTA206X-800ET,127 WeEn Semiconductors bta206x-800et.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 991 Stücke:
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99+0.73 EUR
118+0.61 EUR
174+0.41 EUR
184+0.39 EUR
500+0.38 EUR
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WNSC2D401200CWQ WNSC2D401200CWQ WeEn Semiconductors WNSC2D401200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 125A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A x2
Max. load current: 40A
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WNSC201200CWQ WNSC201200CWQ WeEn Semiconductors _ween_psg2020.pdf WNSC201200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A x2
Max. forward voltage: 1.4V
Max. load current: 20A
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WNSC2D0512006Q WeEn Semiconductors WNSC2D0512006Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 5A
Max. load current: 10A
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WNSC2D10650BJ WeEn Semiconductors WNSC2D10650BJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Max. forward voltage: 2.2V
Max. load current: 20A
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WNSC2D501200W6Q WeEn Semiconductors WNSC2D501200W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 50A
Max. forward voltage: 2.5V
Max. load current: 100A
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WNSC2M20120R6Q WeEn Semiconductors WNSC2M20120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M40120R6Q WeEn Semiconductors WNSC2M40120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC201200WQ WNSC201200WQ WeEn Semiconductors _ween_psg2020.pdf WNSC201200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 220A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A
Max. forward voltage: 1.4V
Max. load current: 40A
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WNSC2D03650MBJ WeEn Semiconductors WNSC2D03650MBJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SiC; SMD; 650V; 3A; reel,tape
Technology: SiC
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 18A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 3A
Max. load current: 6A
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WNSC2D06650DJ WNSC2D06650DJ WeEn Semiconductors WNSC2D06650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 36A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
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WNSC2D06650TJ WeEn Semiconductors Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 36A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
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WNSC2D06650XQ WNSC2D06650XQ WeEn Semiconductors WNSC2D06650X.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
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WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 48A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
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WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 48A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
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WNSC2D101200WQ WNSC2D101200WQ WeEn Semiconductors WNSC2D101200W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 72A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A
Max. forward voltage: 1.88V
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WNSC2D10650DJ WNSC2D10650DJ WeEn Semiconductors WNSC2D10650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
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WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
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WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
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WNSC2D301200CWQ WNSC2D301200CWQ WeEn Semiconductors WNSC2D301200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 102A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A x2
Max. load current: 30A
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WNSC2D401200W6Q WeEn Semiconductors WNSC2D401200W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 350A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 40A
Max. forward voltage: 2.5V
Max. load current: 80A
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WNSC2M12120R6Q WeEn Semiconductors WNSC2M12120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M1K0170WQ WeEn Semiconductors WNSC2M1K0170WQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J WeEn Semiconductors WNSC2M20120B76J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC5D20650X6Q WNSC5D20650X6Q WeEn Semiconductors WNSC5D20650X6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 2.2V
auf Bestellung 972 Stücke:
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24+3.00 EUR
27+2.69 EUR
35+2.06 EUR
37+1.94 EUR
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BYV42E-200,127 BYV42E-200,127 WeEn Semiconductors BYV42E_SERIES.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
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BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
auf Bestellung 390 Stücke:
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65+1.10 EUR
81+0.89 EUR
85+0.84 EUR
250+0.83 EUR
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BYW29E-150,127 BYW29E-150,127 WeEn Semiconductors BYW29E-150.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 636 Stücke:
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82+0.87 EUR
129+0.55 EUR
167+0.43 EUR
177+0.41 EUR
500+0.39 EUR
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BYW29E-200,127 BYW29E-200,127 WeEn Semiconductors BYW29E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 835 Stücke:
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93+0.77 EUR
159+0.45 EUR
169+0.42 EUR
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA225B-800BTJ BTA225B-800BTJ WeEn Semiconductors bta225b-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors byc30w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
41+1.74 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 34
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WNSC5D20650W6Q WeEn Semiconductors WNSC5D20650W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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MCR08BT1,115 MCR08BT1,115 WeEn Semiconductors MCR08BT1.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 200V
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 943 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
188+0.38 EUR
309+0.23 EUR
421+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 148
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BYC8-600P,127 BYC8-600P,127 WeEn Semiconductors byc8-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
163+0.44 EUR
184+0.39 EUR
188+0.38 EUR
194+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 139
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BYC8X-600P,127 BYC8X-600P,127 WeEn Semiconductors byc8x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.9V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 18ns
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 918 Stücke:
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66+1.09 EUR
101+0.71 EUR
172+0.42 EUR
182+0.39 EUR
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BYC8D-600,127 BYC8D-600,127 WeEn Semiconductors byc8d-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
73+0.98 EUR
93+0.77 EUR
Mindestbestellmenge: 67
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BYC8X-600,127 BYC8X-600,127 WeEn Semiconductors byc8x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
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BYC8B-600,118 BYC8B-600,118 WeEn Semiconductors byc8b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Reverse recovery time: 40ns
Max. forward impulse current: 60A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.3V
Load current: 8A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
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BYC80MW-650PT2Q WeEn Semiconductors BYC80MW-650PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: TO247-2
Max. forward voltage: 1.9V
Reverse recovery time: 120ns
Max. load current: 160A
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYC8B-600PJ BYC8B-600PJ WeEn Semiconductors byc8b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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BYC8DX-600,127 BYC8DX-600,127 WeEn Semiconductors byc8dx-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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5.0SMDJ43CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 47.8÷52.8V; 72.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 72.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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BTA204-600C,127 bta204-600c.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw
BTA204-600C,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600E,127 bta204-600e.pdf
BTA204-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204-600F,127 bta204-600f.pdf
BTA204-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA204W-600E,135 PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf
BTA204W-600E,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204W-600F,135 BTA204W-600F.pdf bta204w-600f.pdf
BTA204W-600F,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204W-600C,135 bta204w-600c.pdf
BTA204W-600C,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA204W-600D,135 bta204w-600d.pdf
BTA204W-600D,135
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYC10B-600,118 BYC10B-600.pdf _ween_psg2020.pdf
BYC10B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 55ns; D2PAK,SOT404; Ufmax: 1.4V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 71A
Case: D2PAK; SOT404
Max. forward voltage: 1.4V
Reverse recovery time: 55ns
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.10 EUR
86+0.84 EUR
106+0.68 EUR
117+0.61 EUR
124+0.58 EUR
Mindestbestellmenge: 65
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BYC10DX-600,127 BYC10DX-600.pdf
BYC10DX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
67+1.08 EUR
68+1.06 EUR
Mindestbestellmenge: 53
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BYC10D-600,127 BYC10D-600.pdf
BYC10D-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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BTA425Y-800BTQ _ween_psg2020.pdf
BTA425Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
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WNSC2M150120B76J WNSC2M150120B76J.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 20.3A; Idm: 58A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20.3A
Pulsed drain current: 58A
Power dissipation: 231W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WNSC2M150120W6Q WNSC2M150120W6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SM8S33CAJ SM8S_ser.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
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BTA206X-800ET,127 bta206x-800et.pdf
BTA206X-800ET,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
118+0.61 EUR
174+0.41 EUR
184+0.39 EUR
500+0.38 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D401200CWQ WNSC2D401200CW.pdf
WNSC2D401200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 125A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A x2
Max. load current: 40A
Produkt ist nicht verfügbar
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WNSC201200CWQ _ween_psg2020.pdf WNSC201200CW.pdf
WNSC201200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A x2
Max. forward voltage: 1.4V
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D0512006Q WNSC2D0512006Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 5A
Max. load current: 10A
Produkt ist nicht verfügbar
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WNSC2D10650BJ WNSC2D10650BJ.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Max. forward voltage: 2.2V
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC2D501200W6Q WNSC2D501200W6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 50A
Max. forward voltage: 2.5V
Max. load current: 100A
Produkt ist nicht verfügbar
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WNSC2M20120R6Q WNSC2M20120R.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WNSC2M40120R6Q WNSC2M40120R.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WNSC201200WQ _ween_psg2020.pdf WNSC201200W.pdf
WNSC201200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 220A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 20A
Max. forward voltage: 1.4V
Max. load current: 40A
Produkt ist nicht verfügbar
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WNSC2D03650MBJ WNSC2D03650MBJ.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SiC; SMD; 650V; 3A; reel,tape
Technology: SiC
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 18A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 3A
Max. load current: 6A
Produkt ist nicht verfügbar
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WNSC2D06650DJ WNSC2D06650D.pdf
WNSC2D06650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 36A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Produkt ist nicht verfügbar
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WNSC2D06650TJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 36A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Produkt ist nicht verfügbar
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WNSC2D06650XQ WNSC2D06650X.pdf
WNSC2D06650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 6A
Produkt ist nicht verfügbar
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WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 48A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
Produkt ist nicht verfügbar
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WNSC2D08650TJ WNSC2D08650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 48A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A
Produkt ist nicht verfügbar
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WNSC2D101200WQ WNSC2D101200W.pdf
WNSC2D101200WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 72A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 10A
Max. forward voltage: 1.88V
Produkt ist nicht verfügbar
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WNSC2D10650DJ WNSC2D10650D.pdf
WNSC2D10650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D10650TJ WNSC2D10650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650XQ
WNSC2D10650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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WNSC2D301200CWQ WNSC2D301200CW.pdf
WNSC2D301200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 102A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A x2
Max. load current: 30A
Produkt ist nicht verfügbar
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WNSC2D401200W6Q WNSC2D401200W6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 350A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 40A
Max. forward voltage: 2.5V
Max. load current: 80A
Produkt ist nicht verfügbar
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WNSC2M12120R6Q WNSC2M12120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WNSC2M1K0170WQ WNSC2M1K0170WQ.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WNSC2M20120B76J WNSC2M20120B76J.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D20650X6Q WNSC5D20650X6Q.pdf
WNSC5D20650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 2.2V
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.00 EUR
27+2.69 EUR
35+2.06 EUR
37+1.94 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BYV42E-200,127 BYV42E_SERIES.pdf _ween_psg2020.pdf
BYV42E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1V
Max. load current: 30A
Reverse recovery time: 28ns
Heatsink thickness: max. 1.3mm
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
65+1.10 EUR
81+0.89 EUR
85+0.84 EUR
250+0.83 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-150,127 BYW29E-150.pdf _ween_psg2020.pdf
BYW29E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
129+0.55 EUR
167+0.43 EUR
177+0.41 EUR
500+0.39 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-200,127 BYW29E-200.pdf _ween_psg2020.pdf
BYW29E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
93+0.77 EUR
159+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA225B-800BTJ bta225b-800bt.pdf
BTA225B-800BTJ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYC30W-600PQ byc30w-600p.pdf
BYC30W-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
41+1.74 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 34
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WNSC5D20650W6Q WNSC5D20650W6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Produkt ist nicht verfügbar
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MCR08BT1,115 MCR08BT1.pdf _ween_psg2020.pdf
MCR08BT1,115
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 200V; Ifmax: 0.8A; 0.5A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 200V
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 943 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
188+0.38 EUR
309+0.23 EUR
421+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 148
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BYC8-600P,127 byc8-600p.pdf
BYC8-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
163+0.44 EUR
184+0.39 EUR
188+0.38 EUR
194+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 139
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BYC8X-600P,127 byc8x-600p.pdf
BYC8X-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.9V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 18ns
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 918 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
101+0.71 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 66
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BYC8D-600,127 byc8d-600.pdf
BYC8D-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
73+0.98 EUR
93+0.77 EUR
Mindestbestellmenge: 67
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BYC8X-600,127 byc8x-600.pdf
BYC8X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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BYC8B-600,118 byc8b-600.pdf
BYC8B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Reverse recovery time: 40ns
Max. forward impulse current: 60A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.3V
Load current: 8A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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BYC80MW-650PT2Q BYC80MW-650PT2Q.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: TO247-2
Max. forward voltage: 1.9V
Reverse recovery time: 120ns
Max. load current: 160A
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYC8B-600PJ byc8b-600p.pdf
BYC8B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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BYC8DX-600,127 byc8dx-600.pdf
BYC8DX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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