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WNSC2D10650DJ WNSC2D10650DJ WeEn Semiconductors WNSC2D10650D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D10650TJ WeEn Semiconductors WNSC2D10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D10650XQ WNSC2D10650XQ WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
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WNSC2D301200CWQ WNSC2D301200CWQ WeEn Semiconductors WNSC2D301200CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 102A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A x2
Max. load current: 30A
Produkt ist nicht verfügbar
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WNSC2D401200W6Q WeEn Semiconductors WNSC2D401200W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 350A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 40A
Max. forward voltage: 2.5V
Max. load current: 80A
Produkt ist nicht verfügbar
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WNSC2M12120R6Q WeEn Semiconductors WNSC2M12120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WNSC2M1K0170WQ WeEn Semiconductors WNSC2M1K0170WQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M20120B76J WeEn Semiconductors WNSC2M20120B76J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WNSC5D20650X6Q WNSC5D20650X6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA4120BF3480D5&compId=WNSC5D20650X6Q.pdf?ci_sign=321d8d1fae2a2526cf4826ff91f8107c7a320c22 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 2.2V
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.00 EUR
27+2.69 EUR
35+2.07 EUR
37+1.96 EUR
Mindestbestellmenge: 24
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BYV42E-200,127 BYV42E-200,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 1V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Mounting: THT
auf Bestellung 984 Stücke:
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44+1.64 EUR
51+1.43 EUR
80+0.90 EUR
85+0.85 EUR
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BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors byv42e-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Max. off-state voltage: 150V
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Mounting: THT
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
52+1.39 EUR
81+0.89 EUR
85+0.84 EUR
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BYW29E-150,127 BYW29E-150,127 WeEn Semiconductors BYW29E-150.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
129+0.55 EUR
167+0.43 EUR
177+0.41 EUR
500+0.39 EUR
Mindestbestellmenge: 82
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BYW29E-200,127 BYW29E-200,127 WeEn Semiconductors BYW29E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 835 Stücke:
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45+1.60 EUR
93+0.77 EUR
159+0.45 EUR
169+0.42 EUR
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BTA225-600BT,127 BTA225-600BT,127 WeEn Semiconductors bta225-600bt.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA225B-800BTJ BTA225B-800BTJ WeEn Semiconductors bta225b-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors byc30w-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
41+1.74 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 34
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WNSC5D20650W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65101269260D6&compId=WNSC5D20650W6Q.pdf?ci_sign=63527af6dc2645ad87798c743de07c788f2a46a9 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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BYC8-600P,127 BYC8-600P,127 WeEn Semiconductors byc8-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
163+0.44 EUR
184+0.39 EUR
188+0.38 EUR
194+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 139
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BYC8X-600P,127 BYC8X-600P,127 WeEn Semiconductors byc8x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.9V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 18ns
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 918 Stücke:
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66+1.09 EUR
101+0.71 EUR
172+0.42 EUR
182+0.39 EUR
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BYC8D-600,127 BYC8D-600,127 WeEn Semiconductors byc8d-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
auf Bestellung 93 Stücke:
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67+1.07 EUR
73+0.98 EUR
93+0.77 EUR
Mindestbestellmenge: 67
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BYC8X-600,127 BYC8X-600,127 WeEn Semiconductors byc8x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
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BYC8B-600,118 BYC8B-600,118 WeEn Semiconductors byc8b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Reverse recovery time: 40ns
Max. forward impulse current: 60A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.3V
Load current: 8A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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BYC80MW-650PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCF01B76E3E0D6&compId=BYC80MW-650PT2Q.pdf?ci_sign=28c7e8e5210cdff9fdb2d9faa5c220d789124b80 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 160A
Max. forward voltage: 1.9V
Load current: 80A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Max. forward impulse current: 0.6kA
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BYC8B-600PJ BYC8B-600PJ WeEn Semiconductors byc8b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
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BYC8DX-600,127 BYC8DX-600,127 WeEn Semiconductors byc8dx-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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BYW29EX-200,127 BYW29EX-200,127 WeEn Semiconductors BYW29EX-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
135+0.53 EUR
195+0.37 EUR
206+0.35 EUR
Mindestbestellmenge: 97
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BYW29ED-200,118 BYW29ED-200,118 WeEn Semiconductors BYW29ED-200.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 1442 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
85+0.84 EUR
179+0.40 EUR
190+0.38 EUR
Mindestbestellmenge: 64
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BYW29E-100,127 BYW29E-100,127 WeEn Semiconductors BYW29E-100.pdf BYW29E_Series.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
126+0.57 EUR
143+0.50 EUR
155+0.46 EUR
164+0.44 EUR
250+0.42 EUR
Mindestbestellmenge: 76
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SMBJ26AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
79+0.91 EUR
167+0.43 EUR
176+0.41 EUR
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BYC30MW-650PT2Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB7F9103D9A0D6&compId=BYC30MW-650PT2.pdf?ci_sign=fa57dab85c14887008bc67828085f123d00b04ee Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 270A
Produkt ist nicht verfügbar
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BTA2008-800E,412 BTA2008-800E,412 WeEn Semiconductors PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 10mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA2008-1000DNML WeEn Semiconductors bta2008-1000dn.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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BTA2008-800D,412 WeEn Semiconductors bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Max. forward impulse current: 91A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BYT79-500,127 BYT79-500,127 WeEn Semiconductors byt79-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
93+0.78 EUR
113+0.64 EUR
125+0.57 EUR
132+0.54 EUR
250+0.53 EUR
Mindestbestellmenge: 76
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BT137S-600D.118 BT137S-600D.118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911B8DD7B38259&compId=BT137S-600D.pdf?ci_sign=964b002a16fe852728e3a39cb35b27f8e5187d6f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BTA420-800CT,127 BTA420-800CT,127 WeEn Semiconductors bta420-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT,127 BTA420X-800CT,127 WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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BTA420-800BT,127 WeEn Semiconductors bta420-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 WeEn Semiconductors bta420y-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 220A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT/L02Q WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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WNS40100CQ WNS40100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCF993B5D3480143&compId=WNS40100C.pdf?ci_sign=0a80df66e14763cd58651444b4b1eb668d3497e6 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.00 EUR
86+0.84 EUR
106+0.67 EUR
113+0.64 EUR
500+0.63 EUR
Mindestbestellmenge: 72
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NXPSC04650Q NXPSC04650Q WeEn Semiconductors NXPSC04650.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
Mindestbestellmenge: 25
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BT151X-650LTNQ BT151X-650LTNQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9688018A2BC0C4&compId=BT151X-650LTN.pdf?ci_sign=1ed6a1a58ca20f7b73dcb93edd4d70539c929d76 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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SMCJ58AJ WeEn Semiconductors SMCJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BT258-600R,127 BT258-600R,127 WeEn Semiconductors bt258-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 981 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
137+0.52 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 90
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
76+0.94 EUR
85+0.84 EUR
90+0.80 EUR
100+0.77 EUR
Mindestbestellmenge: 68
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BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
Produkt ist nicht verfügbar
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D20650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
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WNSC2D10650DJ WNSC2D10650D.pdf
WNSC2D10650DJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D10650TJ WNSC2D10650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Technology: SiC
Case: DFN8x8N
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D10650XQ
WNSC2D10650XQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 50A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 10A
Produkt ist nicht verfügbar
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WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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WNSC2D301200CWQ WNSC2D301200CW.pdf
WNSC2D301200CWQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 102A
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 15A x2
Max. load current: 30A
Produkt ist nicht verfügbar
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WNSC2D401200W6Q WNSC2D401200W6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 350A
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Load current: 40A
Max. forward voltage: 2.5V
Max. load current: 80A
Produkt ist nicht verfügbar
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WNSC2M12120R6Q WNSC2M12120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 152.8A; Idm: 430A; 1071W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 152.8A
Pulsed drain current: 430A
Power dissipation: 1071W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 19.1mΩ
Mounting: THT
Gate charge: 321nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M1K0170WQ WNSC2M1K0170WQ.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WNSC2M20120B76J WNSC2M20120B76J.pdf
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 109.2A
Pulsed drain current: 300A
Power dissipation: 789W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 215nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D20650X6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CA4120BF3480D5&compId=WNSC5D20650X6Q.pdf?ci_sign=321d8d1fae2a2526cf4826ff91f8107c7a320c22
WNSC5D20650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 2.2V
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.00 EUR
27+2.69 EUR
35+2.07 EUR
37+1.96 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BYV42E-200,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE890C1AC1AD6BEB3D3&compId=BYV42E_SERIES.pdf?ci_sign=25d73585ef229cf655605349d37e560fd442a3c2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV42E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 1V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Mounting: THT
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
51+1.43 EUR
80+0.90 EUR
85+0.85 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BYV42E-150,127 byv42e-200.pdf
BYV42E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Max. off-state voltage: 150V
Max. load current: 30A
Max. forward voltage: 0.78V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: rectifying
Case: SOT78; TO220AB
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Mounting: THT
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
52+1.39 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-150,127 BYW29E-150.pdf _ween_psg2020.pdf
BYW29E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
129+0.55 EUR
167+0.43 EUR
177+0.41 EUR
500+0.39 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-200,127 BYW29E-200.pdf _ween_psg2020.pdf
BYW29E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
93+0.77 EUR
159+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BTA225-600BT,127 bta225-600bt.pdf
BTA225-600BT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA225B-800BTJ bta225b-800bt.pdf
BTA225B-800BTJ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC30W-600PQ byc30w-600p.pdf
BYC30W-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
41+1.74 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D20650W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65101269260D6&compId=WNSC5D20650W6Q.pdf?ci_sign=63527af6dc2645ad87798c743de07c788f2a46a9
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC8-600P,127 byc8-600p.pdf
BYC8-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
163+0.44 EUR
184+0.39 EUR
188+0.38 EUR
194+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BYC8X-600P,127 byc8x-600p.pdf
BYC8X-600P,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.9V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 18ns
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 918 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
101+0.71 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
BYC8D-600,127 byc8d-600.pdf
BYC8D-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
73+0.98 EUR
93+0.77 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
BYC8X-600,127 byc8x-600.pdf
BYC8X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC8B-600,118 byc8b-600.pdf
BYC8B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Reverse recovery time: 40ns
Max. forward impulse current: 60A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.3V
Load current: 8A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 2V
Reverse recovery time: 46ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC80MW-650PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CCF01B76E3E0D6&compId=BYC80MW-650PT2Q.pdf?ci_sign=28c7e8e5210cdff9fdb2d9faa5c220d789124b80
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 160A
Max. forward voltage: 1.9V
Load current: 80A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Max. forward impulse current: 0.6kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC8B-600PJ byc8b-600p.pdf
BYC8B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 100A
Case: D2PAK; SOT404
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC8DX-600,127 byc8dx-600.pdf
BYC8DX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW29EX-200,127 BYW29EX-200.pdf _ween_psg2020.pdf
BYW29EX-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
135+0.53 EUR
195+0.37 EUR
206+0.35 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
BYW29ED-200,118 BYW29ED-200.pdf _ween_psg2020.pdf
BYW29ED-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 1442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
85+0.84 EUR
179+0.40 EUR
190+0.38 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-100,127 BYW29E-100.pdf BYW29E_Series.pdf
BYW29E-100,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
126+0.57 EUR
143+0.50 EUR
155+0.46 EUR
164+0.44 EUR
250+0.42 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS20H100CBJ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AF5F3408E36E0C7&compId=WNS20H100CB.pdf?ci_sign=665aea423c8dfc437efe54b5579a3393ca7539b8
WNS20H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
79+0.91 EUR
167+0.43 EUR
176+0.41 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
BYC30MW-650PT2Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9FFB7F9103D9A0D6&compId=BYC30MW-650PT2.pdf?ci_sign=fa57dab85c14887008bc67828085f123d00b04ee
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 270A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA2008-800E,412 PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf
BTA2008-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 10mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA2008-1000DNML bta2008-1000dn.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA2008-800D,412 bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Max. forward impulse current: 91A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BYT79-500,127 byt79-500.pdf
BYT79-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
93+0.78 EUR
113+0.64 EUR
125+0.57 EUR
132+0.54 EUR
250+0.53 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
BT137S-600D.118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782911B8DD7B38259&compId=BT137S-600D.pdf?ci_sign=964b002a16fe852728e3a39cb35b27f8e5187d6f pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT137S-600D.118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BTA420-800CT,127 bta420-800ct.pdf
BTA420-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT,127 bta420x-800ct.pdf
BTA420X-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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BTA420-800BT,127 bta420-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 bta420y-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 220A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT/L02Q bta420x-800ct.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS40100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCF993B5D3480143&compId=WNS40100C.pdf?ci_sign=0a80df66e14763cd58651444b4b1eb668d3497e6
WNS40100CQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
86+0.84 EUR
106+0.67 EUR
113+0.64 EUR
500+0.63 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650Q NXPSC04650.pdf _ween_psg2020.pdf
NXPSC04650Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BT151X-650LTNQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD9688018A2BC0C4&compId=BT151X-650LTN.pdf?ci_sign=1ed6a1a58ca20f7b73dcb93edd4d70539c929d76 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT151X-650LTNQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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SMCJ58AJ SMCJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BT258-600R,127 bt258-600r.pdf
BT258-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 981 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
137+0.52 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
76+0.94 EUR
85+0.84 EUR
90+0.80 EUR
100+0.77 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 28ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 30A
Max. forward impulse current: 160A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC20650W-AQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD966C7F256F00C4&compId=NXPSC20650W-A.pdf?ci_sign=20d85f3b6247735c1014ed552b4f98afc9550616
NXPSC20650W-AQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
Produkt ist nicht verfügbar
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D20650B6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D17A394A7D00D4&compId=WNSC6D20650B6J.pdf?ci_sign=e887b72159ebcc12ef90526e0b821b321656f1e8
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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