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WNS40H100CGQ WNS40H100CGQ WeEn Semiconductors _ween_psg2020.pdf WNS40H100CG.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
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NCR100W-10LX NCR100W-10LX WeEn Semiconductors NCR100W-10L.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. forward impulse current: 11A
Gate current: 50µA
Max. off-state voltage: 850V
Turn-on time: 2µs
Load current: 0.8A
Max. load current: 1.1A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
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P6SMBJ64CAJ P6SMBJ64CAJ WeEn Semiconductors P6SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SMCJ36CAJ WeEn Semiconductors SMCJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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ESDALD24BCX ESDALD24BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD
Manufacturer series: LD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 24V
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ESDHD05UBX WeEn Semiconductors ESDHDxxUB%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.9V; 16A; unidirectional; SOD523F; Ch: 1; reel,tape
Mounting: SMD
Manufacturer series: HD
Max. forward impulse current: 16A
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD523F
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 5.9V
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BYV410-600,127 BYV410-600,127 WeEn Semiconductors BYV410-600.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 35ns
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ACT108-600D,126 ACT108-600D,126 WeEn Semiconductors ACT108-600D.pdf PHGLS21889-1.pdf?t.download=true&u=5oefqw Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
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ACT108-600D,412 ACT108-600D,412 WeEn Semiconductors PHGLS21889-1.pdf?t.download=true&u=5oefqw ACT108-600D.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
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ACT108-600E,412 ACT108-600E,412 WeEn Semiconductors ACT108-600E.pdf PHGLS21576-1.pdf?t.download=true&u=5oefqw Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
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BT137-800.127 BT137-800.127 WeEn Semiconductors BT137-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors ACTT4S-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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5.0SMDJ64CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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TOPT12-800C0,127 TOPT12-800C0,127 WeEn Semiconductors topt12-800c0.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 95A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
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BYT79X-600PQ BYT79X-600PQ WeEn Semiconductors byt79x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 165A; SOD113,TO220FP-2
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 165A
Max. forward voltage: 1.25V
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
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104+0.82 EUR
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BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors BT138B-600F.pdf Category: Triacs
Description: Triac; 600V; 12A; Igt: 25/70mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 25/70mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors BT138B-600G.pdf Category: Triacs
Description: Triac; 600V; 12A; Igt: 50/100mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50/100mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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BYV42E-150,127 BYV42E-150,127 WeEn Semiconductors BYV42E-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
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BT132-600D,412 BT132-600D,412 WeEn Semiconductors BT132-600D%20Product%20Rev.03.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/10mA
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BT132-600D,116 BT132-600D,116 WeEn Semiconductors BT132-600D%2C116.pdf BT132-600D%20Product%20Rev.03.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/10mA
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
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BYW29E-200,127 BYW29E-200,127 WeEn Semiconductors BYW29E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
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BYW29EX-200,127 BYW29EX-200,127 WeEn Semiconductors BYW29EX-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
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BYW29E-150,127 BYW29E-150,127 WeEn Semiconductors BYW29E-150.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
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BYW29E-100,127 BYW29E-100,127 WeEn Semiconductors BYW29E-100.pdf BYW29E_Series.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
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BT138X-800 BT138X-800 WeEn Semiconductors BT138X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138X-800F,127 BT138X-800F,127 WeEn Semiconductors BT138X-800F.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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ATS40120HET WeEn Semiconductors Category: Thyristor modules
Description: ATS40120HET
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SMDJ48CAJ SMDJ48CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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WMS20N700SKX WMS20N700SKX WeEn Semiconductors WMS20N700SKX.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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BT138-800.127 BT138-800.127 WeEn Semiconductors BT138-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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MUR860J MUR860J WeEn Semiconductors MUR860.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
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P1KSMBJ68CAJ P1KSMBJ68CAJ WeEn Semiconductors P1KSMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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BT137S-600D.118 BT137S-600D.118 WeEn Semiconductors BT137S-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Case: DPAK
Mounting: SMD
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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BYV410X-600PQ BYV410X-600PQ WeEn Semiconductors BYV410X-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
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74+1.15 EUR
82+1.05 EUR
94+0.92 EUR
102+0.84 EUR
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BYV410X-600,127 BYV410X-600,127 WeEn Semiconductors BYV410X-600.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
auf Bestellung 725 Stücke:
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57+1.51 EUR
63+1.36 EUR
70+1.23 EUR
100+1.09 EUR
500+1.07 EUR
Mindestbestellmenge: 57 Stücke
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BYV410X-600/L01Q BYV410X-600/L01Q WeEn Semiconductors BYV410X-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BT137-600E BT137-600E WeEn Semiconductors BT137-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; Igt: 10/25mA; TO220AB; tube; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 10/25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
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BT151U-500C,127 BT151U-500C,127 WeEn Semiconductors BT151U-500c.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us
Type of thyristor: standard
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Produkt ist nicht verfügbar
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BYC100W-1200PQ BYC100W-1200PQ WeEn Semiconductors BYC100W-1200PQ_DS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns
Features of semiconductor devices: superfast switching
Max. off-state voltage: 1.2kV
Load current: 100A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 115ns
Mounting: THT
Max. forward impulse current: 0.9kA
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 900 Stücke
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WNS40H100CGQ _ween_psg2020.pdf WNS40H100CG.pdf
WNS40H100CGQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Produkt ist nicht verfügbar
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NCR100W-10LX NCR100W-10L.pdf
NCR100W-10LX
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. forward impulse current: 11A
Gate current: 50µA
Max. off-state voltage: 850V
Turn-on time: 2µs
Load current: 0.8A
Max. load current: 1.1A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
Produkt ist nicht verfügbar
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P6SMBJ64CAJ P6SMBJ.pdf
P6SMBJ64CAJ
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ36CAJ SMCJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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ESDALD24BCX ESDALDxxBC.pdf
ESDALD24BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; ESD; SOD323; Ch: 1; LD
Manufacturer series: LD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Type of diode: TVS array
Number of channels: 1
Mounting: SMD
Breakdown voltage: 26V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.35kW
Version: ESD
Max. off-state voltage: 24V
Produkt ist nicht verfügbar
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ESDHD05UBX ESDHDxxUB%20Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.9V; 16A; unidirectional; SOD523F; Ch: 1; reel,tape
Mounting: SMD
Manufacturer series: HD
Max. forward impulse current: 16A
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD523F
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 5.9V
Produkt ist nicht verfügbar
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BYV410-600,127 BYV410-600.pdf _ween_psg2020.pdf
BYV410-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ACT108-600D,126 ACT108-600D.pdf PHGLS21889-1.pdf?t.download=true&u=5oefqw
ACT108-600D,126
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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ACT108-600D,412 PHGLS21889-1.pdf?t.download=true&u=5oefqw ACT108-600D.pdf
ACT108-600D,412
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ACT108-600E,412 ACT108-600E.pdf PHGLS21576-1.pdf?t.download=true&u=5oefqw
ACT108-600E,412
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
Produkt ist nicht verfügbar
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BT137-800.127 BT137-800.pdf _ween_psg2020.pdf
BT137-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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ACTT4S-800E,118 ACTT4S-800E.pdf
ACTT4S-800E,118
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
141+0.61 EUR
200+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 120 Stücke
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5.0SMDJ64CAJ 5.0SMDJ.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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TOPT12-800C0,127 topt12-800c0.pdf
TOPT12-800C0,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 95A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 95A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
Produkt ist nicht verfügbar
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BYT79X-600PQ byt79x-600p.pdf
BYT79X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 165A; SOD113,TO220FP-2
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 165A
Max. forward voltage: 1.25V
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
61+1.39 EUR
84+1.02 EUR
99+0.87 EUR
104+0.82 EUR
500+0.73 EUR
Mindestbestellmenge: 61 Stücke
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BT138B-600F,118 BT138B-600F.pdf
BT138B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 25/70mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 25/70mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT138B-600G,118 BT138B-600G.pdf
BT138B-600G,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 50/100mA; D2PAK; reel,tape; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50/100mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BYV42E-150,127 BYV42E-150.pdf
BYV42E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 0.78V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
48+1.78 EUR
61+1.4 EUR
68+1.26 EUR
73+1.17 EUR
100+1.07 EUR
250+0.96 EUR
500+0.92 EUR
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BT132-600D,412 BT132-600D%20Product%20Rev.03.pdf
BT132-600D,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/10mA
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BT132-600D,116 BT132-600D%2C116.pdf BT132-600D%20Product%20Rev.03.pdf
BT132-600D,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/10mA
Max. forward impulse current: 16A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BYW29E-200,127 BYW29E-200.pdf _ween_psg2020.pdf
BYW29E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 1388 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.89 EUR
73+1.17 EUR
90+0.95 EUR
100+0.87 EUR
250+0.77 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 46 Stücke
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BYW29EX-200,127 BYW29EX-200.pdf _ween_psg2020.pdf
BYW29EX-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 88A; SOD113,TO220FP-2; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 2218 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
43+2.01 EUR
100+0.86 EUR
117+0.73 EUR
124+0.69 EUR
250+0.62 EUR
500+0.57 EUR
1000+0.52 EUR
2000+0.48 EUR
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BYW29E-150,127 BYW29E-150.pdf _ween_psg2020.pdf
BYW29E-150,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
62+1.38 EUR
89+0.95 EUR
105+0.81 EUR
126+0.68 EUR
141+0.61 EUR
154+0.56 EUR
Mindestbestellmenge: 62 Stücke
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BYW29E-100,127 BYW29E-100.pdf BYW29E_Series.pdf
BYW29E-100,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; Ifsm: 88A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
141+0.61 EUR
160+0.54 EUR
172+0.5 EUR
Mindestbestellmenge: 85 Stücke
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BT138X-800 BT138X-800.pdf _ween_psg2020.pdf
BT138X-800
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT138X-800F,127 BT138X-800F.pdf
BT138X-800F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ATS40120HET
Hersteller: WeEn Semiconductors
Category: Thyristor modules
Description: ATS40120HET
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
96+7.12 EUR
Mindestbestellmenge: 96 Stücke
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SMDJ48CAJ SMDJ Series.pdf
SMDJ48CAJ
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 53.7÷58.5V; 38.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.7...58.5V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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WMS20N700SKX WMS20N700SKX.pdf
WMS20N700SKX
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BT138-800.127 BT138-800.pdf _ween_psg2020.pdf
BT138-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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MUR860J MUR860.pdf _ween_psg2020.pdf
MUR860J
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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P1KSMBJ68CAJ P1KSMBJ.pdf
P1KSMBJ68CAJ
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
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BT137S-600D.118 BT137S-600D.pdf _ween_psg2020.pdf
BT137S-600D.118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Case: DPAK
Mounting: SMD
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BYV410X-600PQ BYV410X-600P.pdf _ween_psg2020.pdf
BYV410X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
82+1.05 EUR
94+0.92 EUR
102+0.84 EUR
Mindestbestellmenge: 74 Stücke
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BYV410X-600,127 BYV410X-600.pdf _ween_psg2020.pdf
BYV410X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
57+1.51 EUR
63+1.36 EUR
70+1.23 EUR
100+1.09 EUR
500+1.07 EUR
Mindestbestellmenge: 57 Stücke
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BYV410X-600/L01Q BYV410X-600.pdf
BYV410X-600/L01Q
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BT137-600E BT137-600E.pdf _ween_psg2020.pdf
BT137-600E
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 10/25mA; TO220AB; tube; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 10/25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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BT151U-500C,127 BT151U-500c.pdf
BT151U-500C,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us
Type of thyristor: standard
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Produkt ist nicht verfügbar
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BYC100W-1200PQ BYC100W-1200PQ_DS.pdf
BYC100W-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns
Features of semiconductor devices: superfast switching
Max. off-state voltage: 1.2kV
Load current: 100A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 115ns
Mounting: THT
Max. forward impulse current: 0.9kA
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
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