Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6412) > Seite 103 nach 107
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WTMH80T16RT | WeEn Semiconductors |
![]() Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 80A Max. load current: 125A Case: TO240AA Max. forward voltage: 1.29V Threshold on-voltage: 0.95V Max. forward impulse current: 1.4kA Gate current: 100mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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BT155Z-1200TQ | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1292; TOP3I Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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WNSC2D021200D6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Load current: 2A Max. forward impulse current: 26A Max. off-state voltage: 1.2kV Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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WNSC2D051200D6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Load current: 5A Max. load current: 10A Max. forward impulse current: 45A Max. off-state voltage: 1.2kV Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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WNSC2D101200D6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Load current: 10A Max. load current: 20A Max. forward impulse current: 80A Max. off-state voltage: 1.2kV Semiconductor structure: single diode Type of diode: Schottky rectifying |
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WNSC2D201200CW6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 80A Kind of package: tube Max. load current: 20A |
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WSJM65R099DQ | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD |
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WSJM65R099DTLJ | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 147W Case: TOLL Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
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BT136X-600E/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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MAC97A8/DG,412 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
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BT139-600-0TQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate |
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BT139-600G0TQ | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
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BT138-600-0TQ | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BT138-600/DG,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT139X-600F/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA204X-800C/L03Q | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA212X-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA212X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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BTA212X-600F,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA212B-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA212-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA212B-600B,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA212B-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA212B-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA416X-800CTQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 35mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
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BTA410-800BT,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
Produkt ist nicht verfügbar |
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BTA416X-800BTQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
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BTA408X-1000C0T,127 | WeEn Semiconductors |
![]() Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 35mA Max. load current: 8A Max. forward impulse current: 100A Technology: 3Q; Hi-Com Max. off-state voltage: 1kV Features of semiconductor devices: high temperature; sensitive gate |
Produkt ist nicht verfügbar |
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BT134W-800EF | WeEn Semiconductors |
![]() Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 2A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
auf Bestellung 3702 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ5.0CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.45...6.98V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Leakage current: 0.4mA |
Produkt ist nicht verfügbar |
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BT138Y-800E,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA208X-1000C0/L01 | WeEn Semiconductors |
![]() Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 71A Technology: 3Q; Hi-Com Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT136-600D/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT136-600/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA208-800B/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT138X-600G,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 50/100mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 50/100mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT151-650LTFQ | WeEn Semiconductors |
![]() Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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BT151S-650SJ | WeEn Semiconductors |
![]() Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 0.2mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 90A |
Produkt ist nicht verfügbar |
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BT137X-600/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT169D/DG,126 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Case: TO92 Mounting: THT Max. forward impulse current: 9A Quantity in set/package: 2000pcs. Turn-on time: 2µs Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
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BT169G-L,412 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Mounting: THT Case: TO92 Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A Max. off-state voltage: 0.6kV Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50mA |
Produkt ist nicht verfügbar |
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BT169G-MQP | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Mounting: THT Case: TO92 Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A Max. off-state voltage: 0.6kV Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50mA |
Produkt ist nicht verfügbar |
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BT169G/DG,126 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Mounting: THT Case: TO92 Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A Max. off-state voltage: 0.6kV Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50mA |
Produkt ist nicht verfügbar |
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BT169H-LML | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs Gate current: 100µA |
Produkt ist nicht verfügbar |
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BT169H/01U | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs Gate current: 100µA |
Produkt ist nicht verfügbar |
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BT168GW,135 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.63A Gate current: 50µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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SMAJ18AJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20.19...21.9V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Leakage current: 1µA |
Produkt ist nicht verfügbar |
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ACTT2S-800E,118 | WeEn Semiconductors |
![]() ![]() Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD Max. off-state voltage: 0.8kV Max. load current: 2A Gate current: 10mA Kind of package: reel; tape Type of thyristor: AC switch Mounting: SMD Case: DPAK |
auf Bestellung 548 Stücke: Lieferzeit 14-21 Tag (e) |
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BT137-800G0TQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA316B-600B0J | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BTA316B-600BT,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BTA2008-1000D,126 | WeEn Semiconductors |
![]() Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 0.8A Case: TO92 Gate current: 5mA Max. forward impulse current: 9.9A Technology: 3Q; Hi-Com Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BTA2008-600D,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.8A Case: TO92 Gate current: 5mA Max. forward impulse current: 9A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BTA140-800.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
WNSC6D16650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Max. off-state voltage: 650V Max. load current: 32A Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 110A Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
WNSC6D16650CW6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 110A Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BTA445Z-800BTQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Case: SOT1292; TO3P Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Max. forward impulse current: 495A Kind of package: tube Features of semiconductor devices: high temperature Technology: 3Q; Hi-Com Type of thyristor: triac Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BYC10X-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 150A Case: SOD113; TO220FP-2 Max. forward voltage: 1.3V Reverse recovery time: 19ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC10X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 91A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
ACT108-600D,412 | WeEn Semiconductors |
![]() ![]() Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Case: TO92 Mounting: THT Kind of package: bulk Features of semiconductor devices: internally triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
WTMH80T16RT |
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Hersteller: WeEn Semiconductors
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT155Z-1200TQ |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
24+ | 2.99 EUR |
29+ | 2.52 EUR |
30+ | 2.39 EUR |
90+ | 2.32 EUR |
WNSC2D021200D6J |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 2A
Max. forward impulse current: 26A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 2A
Max. forward impulse current: 26A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WNSC2D051200D6J |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 45A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 45A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WNSC2D101200D6J |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WNSC2D201200CW6Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WSJM65R099DQ |
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Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WSJM65R099DTLJ |
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Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT136X-600E/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAC97A8/DG,412 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT139-600-0TQ |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT139-600G0TQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT138-600-0TQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT138-600/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT139X-600F/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA204X-800C/L03Q |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212X-600B,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212X-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212X-600F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212B-600E,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.8 EUR |
106+ | 0.67 EUR |
121+ | 0.59 EUR |
125+ | 0.57 EUR |
BTA212-600B,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212B-600B,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212B-600D,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA212B-600F,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA416X-800CTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA410-800BT,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA416X-800BTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA408X-1000C0T,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Max. off-state voltage: 1kV
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 8A
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Max. off-state voltage: 1kV
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT134W-800EF |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3702 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
146+ | 0.49 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
SMAJ5.0CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 0.4mA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 0.4mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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BT138Y-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
100+ | 0.72 EUR |
133+ | 0.54 EUR |
141+ | 0.51 EUR |
BTA208X-1000C0/L01 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 71A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 71A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT136-600D/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT136-600/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA208-800B/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT138X-600G,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT151-650LTFQ |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT151S-650SJ |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT137X-600/DG,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT169D/DG,126 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Kind of package: Ammo Pack
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT169G-L,412 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT169G-MQP |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT169G/DG,126 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50mA
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BT169H-LML |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 100µA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 100µA
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BT169H/01U |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 100µA
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 100µA
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BT168GW,135 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
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SMAJ18AJ |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
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ACTT2S-800E,118 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Mounting: SMD
Case: DPAK
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Mounting: SMD
Case: DPAK
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
130+ | 0.55 EUR |
146+ | 0.49 EUR |
213+ | 0.34 EUR |
226+ | 0.32 EUR |
BT137-800G0TQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
117+ | 0.61 EUR |
164+ | 0.44 EUR |
174+ | 0.41 EUR |
BTA316B-600B0J |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA316B-600BT,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA2008-1000D,126 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 0.8A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 9.9A
Technology: 3Q; Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 0.8A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 9.9A
Technology: 3Q; Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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BTA2008-600D,412 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 9A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 9A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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BTA140-800.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WNSC6D16650B6J |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Max. off-state voltage: 650V
Max. load current: 32A
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Max. off-state voltage: 650V
Max. load current: 32A
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
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WNSC6D16650CW6Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Max. off-state voltage: 650V
Max. load current: 32A
Max. forward voltage: 1.65V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
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BTA445Z-800BTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
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BYC10X-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 150A; Ufmax: 1.3V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.3V
Reverse recovery time: 19ns
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BYC10X-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 91A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 91A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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ACT108-600D,412 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: internally triggered
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