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BYW29EX-200,127 BYW29EX-200,127 WeEn Semiconductors BYW29EX-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 793 Stücke:
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97+0.74 EUR
135+0.53 EUR
195+0.37 EUR
206+0.35 EUR
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BYW29ED-200,118 BYW29ED-200,118 WeEn Semiconductors BYW29ED-200.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 1442 Stücke:
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64+1.13 EUR
85+0.84 EUR
179+0.40 EUR
190+0.38 EUR
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BYW29E-100,127 BYW29E-100,127 WeEn Semiconductors BYW29E-100.pdf BYW29E_Series.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
auf Bestellung 552 Stücke:
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126+0.57 EUR
143+0.50 EUR
155+0.46 EUR
164+0.44 EUR
250+0.42 EUR
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SMBJ26AJ WeEn Semiconductors SMBJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors WNS20H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
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79+0.91 EUR
167+0.43 EUR
176+0.41 EUR
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BYC30MW-650PT2Q WeEn Semiconductors BYC30MW-650PT2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 270A
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.3V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 65ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.14...1.4mm
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BTA2008-800E,412 BTA2008-800E,412 WeEn Semiconductors PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 10mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.8kV
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BTA2008-1000DNML WeEn Semiconductors bta2008-1000dn.pdf Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 1kV
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BTA2008-800D,412 WeEn Semiconductors bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
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BYV29FD-600,118 BYV29FD-600,118 WeEn Semiconductors byv29fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Max. forward impulse current: 91A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
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BYT79-500,127 BYT79-500,127 WeEn Semiconductors byt79-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
auf Bestellung 1103 Stücke:
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76+0.94 EUR
93+0.78 EUR
113+0.64 EUR
125+0.57 EUR
132+0.54 EUR
250+0.53 EUR
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BT137S-600D.118 BT137S-600D.118 WeEn Semiconductors BT137S-600D.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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BTA420-800CT,127 BTA420-800CT,127 WeEn Semiconductors bta420-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT,127 BTA420X-800CT,127 WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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BTA420-800BT,127 WeEn Semiconductors bta420-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 WeEn Semiconductors bta420y-800bt.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 220A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT/L02Q WeEn Semiconductors bta420x-800ct.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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WNS40100CQ WNS40100CQ WeEn Semiconductors _ween_psg2020.pdf WNS40100C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
auf Bestellung 1005 Stücke:
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72+1.00 EUR
86+0.84 EUR
106+0.67 EUR
113+0.64 EUR
500+0.63 EUR
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NXPSC04650Q NXPSC04650Q WeEn Semiconductors NXPSC04650.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
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BT151X-650LTNQ BT151X-650LTNQ WeEn Semiconductors BT151X-650LTN.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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SMCJ58AJ WeEn Semiconductors SMCJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BT258-600R,127 BT258-600R,127 WeEn Semiconductors bt258-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 1081 Stücke:
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90+0.80 EUR
137+0.52 EUR
206+0.35 EUR
218+0.33 EUR
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EC103D1WX EC103D1WX WeEn Semiconductors EC103D1W.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
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BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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64+1.13 EUR
82+0.87 EUR
88+0.82 EUR
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BT138B-600F,118 BT138B-600F,118 WeEn Semiconductors bt138b-600f.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BT138B-600G,118 BT138B-600G,118 WeEn Semiconductors bt138b-600g.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
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BYV42EB-200,118 BYV42EB-200,118 WeEn Semiconductors byv42e-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Reverse recovery time: 28ns
Max. forward impulse current: 160A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.85V
Load current: 15A x2
Semiconductor structure: common cathode; double
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC20650W-AQ NXPSC20650W-AQ WeEn Semiconductors _ween_psg2020.pdf NXPSC20650W-A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650B6J WeEn Semiconductors WNSC6D20650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
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NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
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SOD20AX WeEn Semiconductors SOD Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P4SOD33CAX WeEn Semiconductors P4SOD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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P4SOD36AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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P4SOD58AX P4SOD58AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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TYN16-600CT,127 WeEn Semiconductors tyn16-600ct.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
Produkt ist nicht verfügbar
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TYN16-600RTQ WeEn Semiconductors tyn16-600rt.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Produkt ist nicht verfügbar
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TYN16X-600CT,127 TYN16X-600CT,127 WeEn Semiconductors TYN16X-600CT.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
132+0.54 EUR
151+0.47 EUR
167+0.43 EUR
176+0.41 EUR
Mindestbestellmenge: 76
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WMSC008H12B1P6T WeEn Semiconductors WMSC008H12B1P6T.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
On-state resistance: 8mΩ
Power dissipation: 244W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 300A
Produkt ist nicht verfügbar
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYV29X-600,127 BYV29X-600,127 WeEn Semiconductors byv29x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 566 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
94+0.76 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 77
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BT137X-600.127 BT137X-600.127 WeEn Semiconductors BT137X-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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TOPT16-800C0,127 TOPT16-800C0,127 WeEn Semiconductors topt16-800c0.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 140A
Protection: anti-overload OPP; overheating OTP
Features of semiconductor devices: high temperature
Technology: Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
42+1.73 EUR
52+1.39 EUR
55+1.30 EUR
250+1.27 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD36BCX ESDALD36BCX WeEn Semiconductors ESDALDxxBC.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
Case: SOD323
Produkt ist nicht verfügbar
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BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
54+1.32 EUR
97+0.74 EUR
102+0.70 EUR
Mindestbestellmenge: 43
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BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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SMDJ51CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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WNSC6D40650CW-A6Q WeEn Semiconductors WNSC6D40650CW-A6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 140A
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
Produkt ist nicht verfügbar
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WNSC6D40650CW6Q WeEn Semiconductors WNSC6D40650CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 170A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
Produkt ist nicht verfügbar
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BT138-800E.127 BT138-800E.127 WeEn Semiconductors BT138-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BYW29EX-200,127 BYW29EX-200.pdf _ween_psg2020.pdf
BYW29EX-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
135+0.53 EUR
195+0.37 EUR
206+0.35 EUR
Mindestbestellmenge: 97
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BYW29ED-200,118 BYW29ED-200.pdf _ween_psg2020.pdf
BYW29ED-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
auf Bestellung 1442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
85+0.84 EUR
179+0.40 EUR
190+0.38 EUR
Mindestbestellmenge: 64
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BYW29E-100,127 BYW29E-100.pdf BYW29E_Series.pdf
BYW29E-100,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
126+0.57 EUR
143+0.50 EUR
155+0.46 EUR
164+0.44 EUR
250+0.42 EUR
Mindestbestellmenge: 76
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SMBJ26AJ SMBJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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WNS20H100CBJ WNS20H100CB.pdf
WNS20H100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: reel; tape
auf Bestellung 1129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
79+0.91 EUR
167+0.43 EUR
176+0.41 EUR
Mindestbestellmenge: 58
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BYC30MW-650PT2Q BYC30MW-650PT2.pdf
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: THT
Case: TO247-2
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 270A
Produkt ist nicht verfügbar
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BYC30-1200PQ byc30-1200p.pdf _ween_psg2020.pdf
BYC30-1200PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 3.3V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 65ns
Max. forward impulse current: 270A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.14...1.4mm
Produkt ist nicht verfügbar
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BTA2008-800E,412 PHGLS25737-1.pdf?t.download=true&u=5oefqw bta2008-600e.pdf
BTA2008-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 10mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BTA2008-1000DNML bta2008-1000dn.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: Ammo Pack
Features of semiconductor devices: logic level; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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BTA2008-800D,412 bta2008-600d.pdf PHGLS25736-1.pdf?t.download=true&u=5oefqw
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Max. load current: 0.8A
Gate current: 5mA
Max. forward impulse current: 9A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: TO92
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BYV29FD-600,118 byv29fd-600.pdf
BYV29FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Max. forward impulse current: 91A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BYT79-500,127 byt79-500.pdf
BYT79-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
93+0.78 EUR
113+0.64 EUR
125+0.57 EUR
132+0.54 EUR
250+0.53 EUR
Mindestbestellmenge: 76
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BT137S-600D.118 BT137S-600D.pdf _ween_psg2020.pdf
BT137S-600D.118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BTA420-800CT,127 bta420-800ct.pdf
BTA420-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT,127 bta420x-800ct.pdf
BTA420X-800CT,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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BTA420-800BT,127 bta420-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420Y-800BT,127 bta420y-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Max. forward impulse current: 220A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Produkt ist nicht verfügbar
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BTA420X-800CT/L02Q bta420x-800ct.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 200A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Produkt ist nicht verfügbar
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WNS40100CQ _ween_psg2020.pdf WNS40100C.pdf
WNS40100CQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
86+0.84 EUR
106+0.67 EUR
113+0.64 EUR
500+0.63 EUR
Mindestbestellmenge: 72
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NXPSC04650Q NXPSC04650.pdf _ween_psg2020.pdf
NXPSC04650Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 8A
Max. forward voltage: 1.5V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 24A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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BT151X-650LTNQ BT151X-650LTN.pdf _ween_psg2020.pdf
BT151X-650LTNQ
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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SMCJ58AJ SMCJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BT258-600R,127 bt258-600r.pdf
BT258-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
137+0.52 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 90
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EC103D1WX EC103D1W.pdf _ween_psg2020.pdf
EC103D1WX
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
128+0.56 EUR
Mindestbestellmenge: 128
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BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
64+1.13 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
BT138B-600F,118 bt138b-600f.pdf
BT138B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25/70mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT138B-600G,118 bt138b-600g.pdf
BT138B-600G,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50/100mA; Ifsm: 95A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
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BYV42EB-200,118 byv42e-200.pdf
BYV42EB-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Reverse recovery time: 28ns
Max. forward impulse current: 160A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.85V
Load current: 15A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC20650W-AQ _ween_psg2020.pdf NXPSC20650W-A.pdf
NXPSC20650W-AQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Max. forward voltage: 2.1V
Application: automotive industry
Produkt ist nicht verfügbar
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NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650B6J WNSC6D20650B6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
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NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 155A
Kind of package: tube
Produkt ist nicht verfügbar
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SOD20AX SOD Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 22.41÷24.28V; 6.2A; unidirectional; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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P4SOD33CAX P4SOD.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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P4SOD36AX P4SOD.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.2A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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P4SOD58AX P4SOD.pdf
P4SOD58AX
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
Produkt ist nicht verfügbar
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TYN16-600CT,127 tyn16-600ct.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
Produkt ist nicht verfügbar
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TYN16-600RTQ tyn16-600rt.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Produkt ist nicht verfügbar
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TYN16X-600CT,127 TYN16X-600CT.pdf _ween_psg2020.pdf
TYN16X-600CT,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
132+0.54 EUR
151+0.47 EUR
167+0.43 EUR
176+0.41 EUR
Mindestbestellmenge: 76
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WMSC008H12B1P6T WMSC008H12B1P6T.pdf
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
On-state resistance: 8mΩ
Power dissipation: 244W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 300A
Produkt ist nicht verfügbar
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ACTT2S-800ETNJ actt2s-800etn.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYV29X-600,127 byv29x-600.pdf
BYV29X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
94+0.76 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BT137X-600.127 BT137X-600.pdf _ween_psg2020.pdf
BT137X-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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TOPT16-800C0,127 topt16-800c0.pdf
TOPT16-800C0,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 140A
Protection: anti-overload OPP; overheating OTP
Features of semiconductor devices: high temperature
Technology: Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
42+1.73 EUR
52+1.39 EUR
55+1.30 EUR
250+1.27 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD36BCX ESDALDxxBC.pdf
ESDALD36BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 38V; 3A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: bidirectional
Max. forward impulse current: 3A
Breakdown voltage: 38V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Manufacturer series: LD
Peak pulse power dissipation: 0.35kW
Case: SOD323
Produkt ist nicht verfügbar
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BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
54+1.32 EUR
97+0.74 EUR
102+0.70 EUR
Mindestbestellmenge: 43
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BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA216X-600D,127 PHGLS23478-1.pdf?t.download=true&u=5oefqw bta216x-600e.pdf
BTA216X-600D,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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SMDJ51CAJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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WNSC6D40650CW-A6Q WNSC6D40650CW-A6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 140A
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
Produkt ist nicht verfügbar
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WNSC6D40650CW6Q WNSC6D40650CW6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Max. forward impulse current: 170A
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 40A
Load current: 20A x2
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BT138-800E.127 BT138-800E.pdf _ween_psg2020.pdf
BT138-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
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