Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6259) > Seite 104 nach 105

Wählen Sie Seite:   [  << Vorherige Seite ]  1 10 20 30 40 50 60 70 80 90 99 100 101 102 103 104 105  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
WNS40H100CQ WNS40H100CQ WeEn Semiconductors WNS40H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
auf Bestellung 854 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.30 EUR
68+1.06 EUR
85+0.85 EUR
90+0.80 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
BYQ30E-200,127 BYQ30E-200,127 WeEn Semiconductors BYQ30E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOT78; TO220AB
Max. forward voltage: 0.84V
Max. load current: 16A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
115+0.62 EUR
147+0.49 EUR
159+0.45 EUR
168+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D04650D6J WeEn Semiconductors WNSC5D04650D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 26A
Kind of package: reel; tape
Max. load current: 8A
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D046506Q WeEn Semiconductors WNSC5D046506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 28A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D046506Q WeEn Semiconductors WNSC6D046506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 36A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 1.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D04650Q WNSC6D04650Q WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-200.127 BYW29E-200.127 WeEn Semiconductors BYW29E-200.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MAC223A6,127 MAC223A6,127 WeEn Semiconductors mac223a6.pdf Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
auf Bestellung 817 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.50 EUR
67+1.08 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
MAC223A8X,127 MAC223A8X,127 WeEn Semiconductors mac223a8x.pdf Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
49+1.48 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CQ WNS20S100CQ WeEn Semiconductors WNS20S100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
124+0.58 EUR
175+0.41 EUR
185+0.39 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors WNS20S100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CXQ WNS20S100CXQ WeEn Semiconductors _ween_psg2020.pdf WNS20S100CX.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ33AJ WeEn Semiconductors SMDJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ33CAJ WeEn Semiconductors SMDJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV34-400,127 BYV34-400,127 WeEn Semiconductors byv34-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
50+1.46 EUR
85+0.84 EUR
91+0.79 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 BYV29-400,127 WeEn Semiconductors _ween_psg2020.pdf BYV29-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.9V
Load current: 9A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.15...1.4mm
Case: SOD59; TO220AC
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
85+0.85 EUR
138+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BYV74W-400,127 BYV74W-400,127 WeEn Semiconductors byv74w-400.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.60 EUR
50+1.44 EUR
65+1.10 EUR
69+1.04 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BYV30B-600PJ BYV30B-600PJ WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSCM80120R6Q WeEn Semiconductors WNSCM80120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M30120R6Q WeEn Semiconductors WNSC2M30120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M60120R6Q WeEn Semiconductors WNSC2M60120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43.2A; Idm: 120A; 417W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43.2A
Pulsed drain current: 120A
Power dissipation: 417W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M75120R6Q WeEn Semiconductors WNSC2M75120R6Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT139-800.127 BT139-800.127 WeEn Semiconductors BT139-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV42G-200,127 BYV42G-200,127 WeEn Semiconductors byv42g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: I2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100Q-6MX WeEn Semiconductors NCR100Q-6M_0.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-12LX WeEn Semiconductors ncr100w-12l.pdf Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-10LX WeEn Semiconductors ncr100w-10l.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-10MX WeEn Semiconductors ncr100w-10m.pdf Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA140-600.127 BTA140-600.127 WeEn Semiconductors BTA140-600.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. forward impulse current: 190A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors PHGLS23441-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600B,112 BTA201-600B,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 50mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,112 BTA201-600E,112 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,126 WeEn Semiconductors bta201-600b.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 12.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E/L01EP WeEn Semiconductors bta201-600e.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA330-800BTQ BTA330-800BTQ WeEn Semiconductors bta330-800bt.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
48+1.50 EUR
54+1.33 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
BTA330X-800BTQ BTA330X-800BTQ WeEn Semiconductors BTA330X-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
43+1.69 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BTA330Y-800BTQ BTA330Y-800BTQ WeEn Semiconductors BTA330Y-800BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
auf Bestellung 969 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
20+3.59 EUR
25+2.97 EUR
26+2.80 EUR
100+2.70 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WNS40H100CGQ WNS40H100CGQ WeEn Semiconductors _ween_psg2020.pdf WNS40H100CG.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSJM65R170XQ WeEn Semiconductors WSJM65R170XQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD03UFX WeEn Semiconductors ESDHDxxUF%20Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HD
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28ED-200,118 BYQ28ED-200,118 WeEn Semiconductors byq28ed-200.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
97+0.74 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BYC5B-600,118 BYC5B-600,118 WeEn Semiconductors byc5b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Reverse recovery time: 50ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.11V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29B-500,118 BYV29B-500,118 WeEn Semiconductors byv29b-500.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29B-600,118 BYV29B-600,118 WeEn Semiconductors byv29b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FB-600,118 BYV25FB-600,118 WeEn Semiconductors byv25fb-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29FB-600,118 BYV29FB-600,118 WeEn Semiconductors BYV29FB-600.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR440J MUR440J WeEn Semiconductors MUR440.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D30650W6Q WeEn Semiconductors WNSC6D30650W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV44-500,127 BYV44-500,127 WeEn Semiconductors BYV44_SERIES.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 893 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
38+1.92 EUR
43+1.67 EUR
80+0.90 EUR
85+0.84 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CAJ WeEn Semiconductors SMBJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR560J MUR560J WeEn Semiconductors MUR560.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
auf Bestellung 1639 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
170+0.42 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WNS40H100CQ WNS40H100C.PDF
WNS40H100CQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
auf Bestellung 854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.30 EUR
68+1.06 EUR
85+0.85 EUR
90+0.80 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
BYQ30E-200,127 BYQ30E-200.pdf _ween_psg2020.pdf
BYQ30E-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOT78; TO220AB
Max. forward voltage: 0.84V
Max. load current: 16A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
115+0.62 EUR
147+0.49 EUR
159+0.45 EUR
168+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC04650T6J WNSC04650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D04650D6J WNSC5D04650D6J.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 26A
Kind of package: reel; tape
Max. load current: 8A
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D046506Q WNSC5D046506Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 28A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D046506Q WNSC6D046506Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 36A
Kind of package: tube
Max. load current: 8A
Max. forward voltage: 1.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D04650Q
WNSC6D04650Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW29E-200.127 BYW29E-200.pdf _ween_psg2020.pdf
BYW29E-200.127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MAC223A6,127 mac223a6.pdf
MAC223A6,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
auf Bestellung 817 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.50 EUR
67+1.08 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
MAC223A8X,127 mac223a8x.pdf
MAC223A8X,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
49+1.48 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CQ WNS20S100C.PDF
WNS20S100CQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
124+0.58 EUR
175+0.41 EUR
185+0.39 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CBJ WNS20S100CB.pdf
WNS20S100CBJ
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: reel; tape
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CXQ _ween_psg2020.pdf WNS20S100CX.pdf
WNS20S100CXQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ33AJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ33CAJ SMDJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 36.98÷40.3V; 56.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 56.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV34-400,127 byv34-400.pdf
BYV34-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
50+1.46 EUR
85+0.84 EUR
91+0.79 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 _ween_psg2020.pdf BYV29-400.pdf
BYV29-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.9V
Load current: 9A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Max. forward impulse current: 110A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.15...1.4mm
Case: SOD59; TO220AC
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
85+0.85 EUR
138+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BYV74W-400,127 byv74w-400.pdf
BYV74W-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
50+1.44 EUR
65+1.10 EUR
69+1.04 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BYV30B-600PJ byv30b-600p.pdf
BYV30B-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSCM80120R6Q WNSCM80120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 81A
Power dissipation: 270W
Case: TO247-4
Gate-source voltage: -10...25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M30120R6Q WNSC2M30120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M60120R6Q WNSC2M60120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43.2A; Idm: 120A; 417W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43.2A
Pulsed drain current: 120A
Power dissipation: 417W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M75120R6Q WNSC2M75120R6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38.1A
Pulsed drain current: 100A
Power dissipation: 366W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT139-800.127 BT139-800.pdf _ween_psg2020.pdf
BT139-800.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV42G-200,127 byv42g-200.pdf
BYV42G-200,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: I2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100Q-6MX NCR100Q-6M_0.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.51A; Igt: 100uA; SOT89; SMD; Ifsm: 9A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.51A
Gate current: 100µA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-12LX ncr100w-12l.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-10LX ncr100w-10l.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 50µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-10MX ncr100w-10m.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 850V; Ifmax: 1.1A; 0.8A; Igt: 100uA; SOT223; SMD; Ifsm: 11A
Type of thyristor: thyristor
Max. off-state voltage: 850V
Max. load current: 1.1A
Load current: 0.8A
Gate current: 100µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 11A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA140-600.127 BTA140-600.pdf _ween_psg2020.pdf
BTA140-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. forward impulse current: 190A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103A,127
BUJ103A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AX,127 PHGLS23441-1.pdf?t.download=true&u=5oefqw
BUJ103AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AD,118 BUJ103AD.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600B,112 bta201-600b.pdf
BTA201-600B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 50mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,112 bta201-600b.pdf
BTA201-600E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E,126 bta201-600b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 12.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA201-600E/L01EP bta201-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Gate current: 10mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Case: TO92
Type of thyristor: triac
Max. forward impulse current: 12.5A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA330-800BTQ bta330-800bt.pdf
BTA330-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
48+1.50 EUR
54+1.33 EUR
62+1.16 EUR
65+1.10 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
BTA330X-800BTQ BTA330X-800BT.pdf _ween_psg2020.pdf
BTA330X-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220FP; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.69 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BTA330Y-800BTQ BTA330Y-800BT.pdf _ween_psg2020.pdf
BTA330Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 50mA; Ifsm: 270A; 3Q,Hi-Com
Mounting: THT
Max. forward impulse current: 270A
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
auf Bestellung 969 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
20+3.59 EUR
25+2.97 EUR
26+2.80 EUR
100+2.70 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WNS40H100CGQ _ween_psg2020.pdf WNS40H100CG.pdf
WNS40H100CGQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSJM65R170XQ WSJM65R170XQ.pdf
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD03UFX ESDHDxxUF%20Series.pdf
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4÷8V; 24A; unidirectional; DFN1006-2; reel,tape; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4...8V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Manufacturer series: HD
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYQ28ED-200,118 byq28ed-200.pdf
BYQ28ED-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Reverse recovery time: 25ns
Max. forward impulse current: 55A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Max. load current: 10A
Max. forward voltage: 1.25V
Load current: 5A x2
Semiconductor structure: common cathode; double
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
97+0.74 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BYC5B-600,118 byc5b-600.pdf
BYC5B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; D2PAK,SOT404; Ufmax: 2.2V
Reverse recovery time: 30ns
Max. forward impulse current: 44A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Reverse recovery time: 50ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.11V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29B-500,118 byv29b-500.pdf
BYV29B-500,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 500V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 500V
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29B-600,118 byv29b-600.pdf
BYV29B-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V
Reverse recovery time: 60ns
Max. forward impulse current: 77A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FB-600,118 byv25fb-600.pdf
BYV25FB-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Reverse recovery time: 35ns
Max. forward impulse current: 66A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29FB-600,118 BYV29FB-600.pdf _ween_psg2020.pdf
BYV29FB-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; 35ns; D2PAK,SOT404; Ufmax: 1.25V
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR440J MUR440.pdf
MUR440J
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; Ifsm: 140A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 140A
Case: SMC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D30650W6Q WNSC6D30650W6Q.pdf
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV44-500,127 BYV44_SERIES.pdf _ween_psg2020.pdf
BYV44-500,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
auf Bestellung 893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
38+1.92 EUR
43+1.67 EUR
80+0.90 EUR
85+0.84 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ40CAJ SMBJ Series.pdf
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR560J MUR560.pdf _ween_psg2020.pdf
MUR560J
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 45ns; SMC; Ufmax: 1.35V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.35V
Max. forward impulse current: 130A
Kind of package: reel; tape
auf Bestellung 1639 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
170+0.42 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 10 20 30 40 50 60 70 80 90 99 100 101 102 103 104 105  [ Nächste Seite >> ]