Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6469) > Seite 107 nach 108

Wählen Sie Seite:   [  << Vorherige Seite ]  1 10 20 30 40 50 60 70 80 90 100 102 103 104 105 106 107 108  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BTA308Y-800C0TQ BTA308Y-800C0TQ WeEn Semiconductors bta308y-800c0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 60A
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
auf Bestellung 555 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
126+0.57 EUR
147+0.49 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ26CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138-800E.127 BT138-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913802018FA259&compId=BT138-800E.pdf?ci_sign=b984e895b60ea3f4cf57d9df4f6794e71b7c29f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT136-800E.127 BT136-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F79FF6600259&compId=BT136-800E.pdf?ci_sign=90acedf68dd52741d51d6128c1995f2cefd47560 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ68CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TYN40Y-800TQ WeEn Semiconductors TYN40Y-800T.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ106A,127 BUJ106A,127 WeEn Semiconductors buj106a.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M45065B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E4175D5D03C0D6&compId=WNSC2M45065B76J.pdf?ci_sign=5d94e3718c5241b1ea088d4972d5fd6e70669803 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 181A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Pulsed drain current: 181A
Power dissipation: 484W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYR29-800,127 BYR29-800,127 WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
120+0.6 EUR
132+0.54 EUR
171+0.42 EUR
181+0.4 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 BYV29-400,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 60ns
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
81+0.89 EUR
100+0.72 EUR
140+0.51 EUR
148+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ27AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138X-600.127 BT138X-600.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782916E44DE9DC259&compId=BT138X-600.pdf?ci_sign=32d1d5165fb5fc7307a1513cda966a2bd2d526df pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TYN40-800TQ WeEn Semiconductors tyn40-800t.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC126506Q NXPSC126506Q WeEn Semiconductors en Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Load current: 12A
Max. forward impulse current: 72A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ33CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD24BCX ESDALD24BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Manufacturer series: LD
Max. forward impulse current: 6A
Breakdown voltage: 26V
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FX-600,127 BYV25FX-600,127 WeEn Semiconductors byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25X-600,127 BYV25X-600,127 WeEn Semiconductors byv25x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
93+0.77 EUR
111+0.65 EUR
197+0.36 EUR
209+0.34 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25F-600,127 BYV25F-600,127 WeEn Semiconductors byv25f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FB-600,118 BYV25FB-600,118 WeEn Semiconductors byv25fb-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: D2PAK; SOT404
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25G-600,127 BYV25G-600,127 WeEn Semiconductors PHGLS19942-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: I2PAK
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BT/L02Q WeEn Semiconductors bta425x-800bt.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BQ BTA425X-800BQ WeEn Semiconductors bta425x-800b.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800BTQ BTA425Y-800BTQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800CTQ BTA425Y-800CTQ WeEn Semiconductors bta425y-800ct.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M30120R6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138-800G.127 BT138-800G.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913C6C44262259&compId=BT138-800G.pdf?ci_sign=a26814d9ae4b26aae1392d5cc06c77d892fab25c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA45-800BQ WeEn Semiconductors bta45-800b.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Case: SOT1292; TO3P
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650B6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E622A17B1640D6&compId=WNSC6D16650B6J.pdf?ci_sign=cc40ad2ab6a084f125cb3216bf70f5d30875fc22 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650CW6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D13A01158B00D4&compId=WNSC6D16650CW6Q.pdf?ci_sign=0fc6f322840a4de8ec592b7a74dbd52f83a649cb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT12S-800CTNJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB6CA7B95580D6&compId=ACTT12S-800CTN.pdf?ci_sign=396704c4de40f1c210c5f5f7af17a9d4c8cabc60 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; DPAK; SMD
Mounting: SMD
Case: DPAK
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D30650W6Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65A4F20C760D6&compId=WNSC6D30650W6Q.pdf?ci_sign=cb603f0d77405bd0bf7c031f810ff0eb1e8462ec Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC20650W6Q NXPLQSC20650W6Q WeEn Semiconductors nxplqsc20650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW29ED-200,118 BYW29ED-200,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE89915EDFB4E7E0D5&compId=BYW29ED-200.pdf?ci_sign=8f4543668c1357ee6c420cc406b99d21f1d7ba1a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.8V
Max. forward impulse current: 80A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
auf Bestellung 1041 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
101+0.71 EUR
194+0.37 EUR
205+0.35 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WND08P16DJ WND08P16DJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCF9A5BF884E2143&compId=WND08P16D.pdf?ci_sign=2bb43dab9bf843257ba6445a4755815b8a3d7071 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 0.95V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 976 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
66+1.09 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D046506Q WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0E4CAFAA6A0D4&compId=WNSC5D046506Q.pdf?ci_sign=4b8554a8fce57c404e8fc58817305baa6059ab16 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 28A
Kind of package: tube
Max. forward voltage: 2.2V
Max. load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D04650D6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF27CC2140A0D3&compId=WNSC5D04650D6J.pdf?ci_sign=4c416eeac60c2d5ff006178040a0a9ddb6e127e9 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 26A
Kind of package: reel; tape
Max. forward voltage: 2.2V
Max. load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D04650Q WNSC6D04650Q WeEn Semiconductors Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM8S33CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM8S43CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ70CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 78.4...85.4V
Max. forward impulse current: 26.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA140-600.127 BTA140-600.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782925CCC9C20C259&compId=BTA140-600.pdf?ci_sign=fa76604686376d986e4fdf553ad60d754491e919 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA308Y-800C0TQ bta308y-800c0t.pdf
BTA308Y-800C0TQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 60A
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
auf Bestellung 555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
126+0.57 EUR
147+0.49 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ26CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913802018FA259&compId=BT138-800E.pdf?ci_sign=b984e895b60ea3f4cf57d9df4f6794e71b7c29f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT136-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F79FF6600259&compId=BT136-800E.pdf?ci_sign=90acedf68dd52741d51d6128c1995f2cefd47560 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ68CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TYN40Y-800TQ TYN40Y-800T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ106A,127 buj106a.pdf
BUJ106A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT155W-1400TQ BT155W-1400T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M45065B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E4175D5D03C0D6&compId=WNSC2M45065B76J.pdf?ci_sign=5d94e3718c5241b1ea088d4972d5fd6e70669803
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 181A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Pulsed drain current: 181A
Power dissipation: 484W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYR29-800,127
BYR29-800,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
120+0.6 EUR
132+0.54 EUR
171+0.42 EUR
181+0.4 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ64CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 60ns
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
81+0.89 EUR
100+0.72 EUR
140+0.51 EUR
148+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ27AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138X-600.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782916E44DE9DC259&compId=BT138X-600.pdf?ci_sign=32d1d5165fb5fc7307a1513cda966a2bd2d526df pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138X-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TYN40-800TQ tyn40-800t.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC126506Q en
NXPSC126506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Load current: 12A
Max. forward impulse current: 72A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT2S-800ETNJ actt2s-800etn.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ33CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD24BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD24BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Manufacturer series: LD
Max. forward impulse current: 6A
Breakdown voltage: 26V
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FX-600,127 byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw
BYV25FX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25X-600,127 byv25x-600.pdf
BYV25X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
93+0.77 EUR
111+0.65 EUR
197+0.36 EUR
209+0.34 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25F-600,127 byv25f-600.pdf
BYV25F-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FB-600,118 byv25fb-600.pdf
BYV25FB-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: D2PAK; SOT404
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV25G-600,127 PHGLS19942-1.pdf?t.download=true&u=5oefqw
BYV25G-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: I2PAK
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BT/L02Q bta425x-800bt.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 275A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425X-800BQ bta425x-800b.pdf
BTA425X-800BQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800BTQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA425Y-800BTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA425Y-800CTQ bta425y-800ct.pdf
BTA425Y-800CTQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 250A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ26AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M30120R6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E3D6BD154DE0D6&compId=WNSC2M30120R6Q.pdf?ci_sign=5259bee2a318e1727c3d051d366c1673db4f9ed7
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75.2A; Idm: 200A; 652W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75.2A
Pulsed drain current: 200A
Power dissipation: 652W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138-800G.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913C6C44262259&compId=BT138-800G.pdf?ci_sign=a26814d9ae4b26aae1392d5cc06c77d892fab25c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138-800G.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA45-800BQ bta45-800b.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Case: SOT1292; TO3P
Type of thyristor: triac
Kind of package: tube
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650B6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E622A17B1640D6&compId=WNSC6D16650B6J.pdf?ci_sign=cc40ad2ab6a084f125cb3216bf70f5d30875fc22
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D16650CW6Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D13A01158B00D4&compId=WNSC6D16650CW6Q.pdf?ci_sign=0fc6f322840a4de8ec592b7a74dbd52f83a649cb
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT12S-800CTNJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB6CA7B95580D6&compId=ACTT12S-800CTN.pdf?ci_sign=396704c4de40f1c210c5f5f7af17a9d4c8cabc60
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 12A; Igt: 35mA; DPAK; SMD
Mounting: SMD
Case: DPAK
Gate current: 35mA
Max. load current: 12A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D30650W6Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E65A4F20C760D6&compId=WNSC6D30650W6Q.pdf?ci_sign=cb603f0d77405bd0bf7c031f810ff0eb1e8462ec
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC20650W6Q nxplqsc20650w.pdf
NXPLQSC20650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 71.6÷78V; 5.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW29ED-200,118 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE89915EDFB4E7E0D5&compId=BYW29ED-200.pdf?ci_sign=8f4543668c1357ee6c420cc406b99d21f1d7ba1a pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYW29ED-200,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.8V
Max. forward impulse current: 80A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
auf Bestellung 1041 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
101+0.71 EUR
194+0.37 EUR
205+0.35 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WND08P16DJ pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCF9A5BF884E2143&compId=WND08P16D.pdf?ci_sign=2bb43dab9bf843257ba6445a4755815b8a3d7071 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
WND08P16DJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 0.95V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
66+1.09 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 24A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC04650T6J WNSC04650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN8x8N
Max. forward impulse current: 24A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D046506Q pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0E4CAFAA6A0D4&compId=WNSC5D046506Q.pdf?ci_sign=4b8554a8fce57c404e8fc58817305baa6059ab16
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 28A
Kind of package: tube
Max. forward voltage: 2.2V
Max. load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D04650D6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF27CC2140A0D3&compId=WNSC5D04650D6J.pdf?ci_sign=4c416eeac60c2d5ff006178040a0a9ddb6e127e9
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 26A
Kind of package: reel; tape
Max. forward voltage: 2.2V
Max. load current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D04650Q
WNSC6D04650Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 30A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM8S33CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SM8S43CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90C9DCF8552600D5&compId=SM8S_ser.pdf?ci_sign=de6efedc7b1a0f20d98cf269f0efb7ba8d77acec
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ70CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 78.4÷85.4V; 26.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 70V
Breakdown voltage: 78.4...85.4V
Max. forward impulse current: 26.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA140-600.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782925CCC9C20C259&compId=BTA140-600.pdf?ci_sign=fa76604686376d986e4fdf553ad60d754491e919 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BTA140-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 10 20 30 40 50 60 70 80 90 100 102 103 104 105 106 107 108  [ Nächste Seite >> ]