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P6SMAL36AX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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P6SMAL75AX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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OT412,115 OT412,115 WeEn Semiconductors Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
auf Bestellung 777 Stücke:
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260+0.28 EUR
317+0.23 EUR
338+0.21 EUR
360+0.2 EUR
374+0.19 EUR
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BYC15X-600PQ BYC15X-600PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E284E0C9E3C259&compId=BYC15X-600P.pdf?ci_sign=fb6841fe1c3bf10f904a7715dc99648915312bbc pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
auf Bestellung 1065 Stücke:
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84+0.86 EUR
106+0.67 EUR
113+0.64 EUR
250+0.62 EUR
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BYC15X-600,127 BYC15X-600,127 WeEn Semiconductors byc15x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
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BYV32E-300PQ BYV32E-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
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BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
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BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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BYV32EX-300PQ BYV32EX-300PQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
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WNS30H100CQ WNS30H100CQ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88FAA85420E0C7&compId=WNS30H100C.PDF?ci_sign=6dcb0b1b7d1d69740fbef0af3fcbbee35289e201 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
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65+1.1 EUR
80+0.9 EUR
97+0.74 EUR
101+0.72 EUR
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ACTT6X-800E,127 ACTT6X-800E,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F79B85920AA74A&compId=ACTT6X-800E.pdf?ci_sign=560ea120b2ba6264638bf589e5c5a789dfe2e15c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
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85+0.84 EUR
125+0.57 EUR
153+0.47 EUR
162+0.44 EUR
500+0.43 EUR
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ACTT6-800E,127 WeEn Semiconductors PHGL-S-A0001057229-1.pdf?t.download=true&u=5oefqw actt6-800e.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
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BTA202X-800E,127 BTA202X-800E,127 WeEn Semiconductors PHGLS29731-1.pdf?t.download=true&u=5oefqw bta202x-800e.pdf Category: Triacs
Description: Triac; 800V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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ACTT2X-800E,127 WeEn Semiconductors actt2x-800e.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
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ACTT4X-800E,127 WeEn Semiconductors actt4x-800e.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
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ACTT6G-800E,127 WeEn Semiconductors actt6g-800e.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
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BTA202X-600E,127 BTA202X-600E,127 WeEn Semiconductors bta202x-600e.pdf Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA310-600E,127 WeEn Semiconductors bta310-600e.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA310X-600E,127 BTA310X-600E,127 WeEn Semiconductors bta310x-600e.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC58X-600,127 BYC58X-600,127 WeEn Semiconductors byc58x-600.pdf BYC58X-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
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49+1.49 EUR
57+1.26 EUR
74+0.97 EUR
79+0.92 EUR
500+0.89 EUR
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BUJ103A,127 BUJ103A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
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BUJ103AX,127 BUJ103AX,127 WeEn Semiconductors PHGLS23441-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
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BUJ103AD,118 WeEn Semiconductors BUJ103AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
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BTA308Y-800C0TQ BTA308Y-800C0TQ WeEn Semiconductors bta308y-800c0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 60A
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
auf Bestellung 555 Stücke:
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70+1.03 EUR
126+0.57 EUR
147+0.49 EUR
166+0.43 EUR
175+0.41 EUR
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5.0SMDJ26CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT138-800E.127 BT138-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913802018FA259&compId=BT138-800E.pdf?ci_sign=b984e895b60ea3f4cf57d9df4f6794e71b7c29f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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BT136-800E.127 BT136-800E.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F79FF6600259&compId=BT136-800E.pdf?ci_sign=90acedf68dd52741d51d6128c1995f2cefd47560 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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P1KSMBJ68CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
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TYN40Y-800TQ WeEn Semiconductors TYN40Y-800T.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
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BUJ106A,127 BUJ106A,127 WeEn Semiconductors buj106a.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
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BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
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BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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WNSC2M45065B76J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E4175D5D03C0D6&compId=WNSC2M45065B76J.pdf?ci_sign=5d94e3718c5241b1ea088d4972d5fd6e70669803 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 181A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Pulsed drain current: 181A
Power dissipation: 484W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BYR29-800,127 BYR29-800,127 WeEn Semiconductors Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
120+0.6 EUR
132+0.54 EUR
171+0.42 EUR
181+0.4 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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5.0SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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BYV29-400,127 BYV29-400,127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 60ns
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
81+0.89 EUR
100+0.72 EUR
140+0.51 EUR
148+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ27AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
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BT138X-600.127 BT138X-600.127 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1ED782916E44DE9DC259&compId=BT138X-600.pdf?ci_sign=32d1d5165fb5fc7307a1513cda966a2bd2d526df pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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TYN40-800TQ WeEn Semiconductors tyn40-800t.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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NXPSC126506Q NXPSC126506Q WeEn Semiconductors en Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Load current: 12A
Max. forward impulse current: 72A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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ACTT2S-800ETNJ WeEn Semiconductors actt2s-800etn.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ33CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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ESDALD24BCX ESDALD24BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Manufacturer series: LD
Max. forward impulse current: 6A
Breakdown voltage: 26V
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
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BYV25FX-600,127 BYV25FX-600,127 WeEn Semiconductors byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYV25X-600,127 BYV25X-600,127 WeEn Semiconductors byv25x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
93+0.77 EUR
111+0.65 EUR
197+0.36 EUR
209+0.34 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
BYV25FD-600,118 BYV25FD-600,118 WeEn Semiconductors byv25fd-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYV25D-600,118 BYV25D-600,118 WeEn Semiconductors byv25d-600.pdf BYV25D-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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BYV25F-600,127 BYV25F-600,127 WeEn Semiconductors byv25f-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYV25FB-600,118 BYV25FB-600,118 WeEn Semiconductors byv25fb-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: D2PAK; SOT404
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV25G-600,127 BYV25G-600,127 WeEn Semiconductors PHGLS19942-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: I2PAK
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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P6SMAL36AX pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Produkt ist nicht verfügbar
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P6SMAL75AX pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E65511C67020D4&compId=P6SMAL.pdf?ci_sign=b1e2761b8b0d245cfa39a7a70fcd25fa432f50a7
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Produkt ist nicht verfügbar
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OT412,115
OT412,115
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+0.28 EUR
317+0.23 EUR
338+0.21 EUR
360+0.2 EUR
374+0.19 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
BYC15X-600PQ pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E284E0C9E3C259&compId=BYC15X-600P.pdf?ci_sign=fb6841fe1c3bf10f904a7715dc99648915312bbc pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYC15X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
84+0.86 EUR
106+0.67 EUR
113+0.64 EUR
250+0.62 EUR
Mindestbestellmenge: 69
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BYC15X-600,127 byc15x-600.pdf
BYC15X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYV32E-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD95B955CDB060C4&compId=BYV32E-300P.pdf?ci_sign=f7f7fbbc6a96b744d3417cbff690b8631c544806 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32E-300PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
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BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Produkt ist nicht verfügbar
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BYV32EB-300PJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD963EBC3DB120C4&compId=BYV32EB-300P.pdf?ci_sign=44df4d4918ee7b2325f3c599d4aeb56c9a415f47 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EB-300PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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BYV32EX-300PQ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD964B10D38520C4&compId=BYV32EX-300P.pdf?ci_sign=4968244df9558922ddf562afb67bf6717b590dab pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV32EX-300PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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WNS30H100CQ pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9B88FAA85420E0C7&compId=WNS30H100C.PDF?ci_sign=6dcb0b1b7d1d69740fbef0af3fcbbee35289e201
WNS30H100CQ
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
80+0.9 EUR
97+0.74 EUR
101+0.72 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6X-800E,127 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F79B85920AA74A&compId=ACTT6X-800E.pdf?ci_sign=560ea120b2ba6264638bf589e5c5a789dfe2e15c pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
ACTT6X-800E,127
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
125+0.57 EUR
153+0.47 EUR
162+0.44 EUR
500+0.43 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6-800E,127 PHGL-S-A0001057229-1.pdf?t.download=true&u=5oefqw actt6-800e.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA202X-800E,127 PHGLS29731-1.pdf?t.download=true&u=5oefqw bta202x-800e.pdf
BTA202X-800E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT2X-800E,127 actt2x-800e.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT4X-800E,127 actt4x-800e.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6G-800E,127 actt6g-800e.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA202X-600E,127 bta202x-600e.pdf
BTA202X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA310-600E,127 bta310-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA310X-600E,127 bta310x-600e.pdf
BTA310X-600E,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC58X-600,127 byc58x-600.pdf BYC58X-600.pdf
BYC58X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
auf Bestellung 943 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
57+1.26 EUR
74+0.97 EUR
79+0.92 EUR
500+0.89 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103A,127
BUJ103A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AX,127 PHGLS23441-1.pdf?t.download=true&u=5oefqw
BUJ103AX,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ103AD,118 BUJ103AD.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA308Y-800C0TQ bta308y-800c0t.pdf
BTA308Y-800C0TQ
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 60A
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
auf Bestellung 555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
126+0.57 EUR
147+0.49 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ26CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782913802018FA259&compId=BT138-800E.pdf?ci_sign=b984e895b60ea3f4cf57d9df4f6794e71b7c29f2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT136-800E.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78290F79FF6600259&compId=BT136-800E.pdf?ci_sign=90acedf68dd52741d51d6128c1995f2cefd47560 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT136-800E.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ68CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TYN40Y-800TQ TYN40Y-800T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; SOT78D; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: SOT78D
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUJ106A,127 buj106a.pdf
BUJ106A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT155W-1400TQ BT155W-1400T.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2M45065B76J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E4175D5D03C0D6&compId=WNSC2M45065B76J.pdf?ci_sign=5d94e3718c5241b1ea088d4972d5fd6e70669803
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 181A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Pulsed drain current: 181A
Power dissipation: 484W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYR29-800,127
BYR29-800,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.95V
Reverse recovery time: 75ns
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
120+0.6 EUR
132+0.54 EUR
171+0.42 EUR
181+0.4 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ64CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV29-400,127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782E24D03E266E259&compId=BYV29-400.pdf?ci_sign=5662af63860df70897e566273e21c6543e23f157 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BYV29-400,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: 1.15...1.4mm
Reverse recovery time: 60ns
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
81+0.89 EUR
100+0.72 EUR
140+0.51 EUR
148+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
P1KSMBJ27AJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E603AA2ACDE0D4&compId=P1KSMBJ.pdf?ci_sign=79a0fcbcbecb0d0af3b500b9296556ffc543ba48
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT138X-600.127 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782916E44DE9DC259&compId=BT138X-600.pdf?ci_sign=32d1d5165fb5fc7307a1513cda966a2bd2d526df pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT138X-600.127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TYN40-800TQ tyn40-800t.pdf
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 15mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 495A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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NXPSC126506Q en
NXPSC126506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Load current: 12A
Max. forward impulse current: 72A
Max. off-state voltage: 650V
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ACTT2S-800ETNJ actt2s-800etn.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
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5.0SMDJ33CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7÷40.6V; 93.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 93.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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ESDALD24BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD24BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 26V; 6A; 350W; bidirectional; SOD323; Ch: 1; LD; ESD
Mounting: SMD
Manufacturer series: LD
Max. forward impulse current: 6A
Breakdown voltage: 26V
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 1
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BYV25FX-600,127 byv25fx-600.pdf PHGLS22516-1.pdf?t.download=true&u=5oefqw
BYV25FX-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV25X-600,127 byv25x-600.pdf
BYV25X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
93+0.77 EUR
111+0.65 EUR
197+0.36 EUR
209+0.34 EUR
Mindestbestellmenge: 80
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BYV25FD-600,118 byv25fd-600.pdf
BYV25FD-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; DPAK; Ufmax: 1.7V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYV25D-600,118 byv25d-600.pdf BYV25D-600.pdf
BYV25D-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 50ns; DPAK; Ufmax: 1.11V; Ifsm: 66A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: DPAK
Max. forward voltage: 1.11V
Reverse recovery time: 50ns
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BYV25F-600,127 byv25f-600.pdf
BYV25F-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: SOD59; TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
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BYV25FB-600,118 byv25fb-600.pdf
BYV25FB-600,118
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 35ns; D2PAK,SOT404; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 66A
Case: D2PAK; SOT404
Max. forward voltage: 1.7V
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
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BYV25G-600,127 PHGLS19942-1.pdf?t.download=true&u=5oefqw
BYV25G-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 66A; I2PAK; Ufmax: 1.11V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 66A
Case: I2PAK
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
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