Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6310) > Seite 106 nach 106
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WNS20S100CQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. load current: 20A Max. forward impulse current: 120A Kind of package: tube |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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BT137-800E | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; Igt: 10/25mA; TO220AB; tube; Ifsm: 65A; 4Q Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 10/25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BYV42E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 1V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns |
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BYV42EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 160A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 0.85V Max. load current: 30A Reverse recovery time: 28ns |
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BYR29-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube Max. off-state voltage: 0.6kV Load current: 8A Case: SOD59; TO220AC Mounting: THT Kind of package: tube Reverse recovery time: 75ns Max. forward impulse current: 66A Max. forward voltage: 1.07V Features of semiconductor devices: ultrafast switching Heatsink thickness: max. 1.3mm Semiconductor structure: single diode Type of diode: rectifying |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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| SM8S43CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 95.1A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
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BTA330X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 30A Gate current: 50mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 270A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
auf Bestellung 456 Stücke: Lieferzeit 14-21 Tag (e) |
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|
BTA140-600.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 25A Gate current: 35/70mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate |
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P1KSMBJ27AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 26.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
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SMDJ58CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.9...70.7V Max. forward impulse current: 32.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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| WNS20S100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| BT137-800E |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; Igt: 10/25mA; TO220AB; tube; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 10/25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; Igt: 10/25mA; TO220AB; tube; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 10/25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| BYV42E-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
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| BYV42EB-200,118 |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
Produkt ist nicht verfügbar
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| BYR29-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube
Max. off-state voltage: 0.6kV
Load current: 8A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Reverse recovery time: 75ns
Max. forward impulse current: 66A
Max. forward voltage: 1.07V
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Semiconductor structure: single diode
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube
Max. off-state voltage: 0.6kV
Load current: 8A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Reverse recovery time: 75ns
Max. forward impulse current: 66A
Max. forward voltage: 1.07V
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Semiconductor structure: single diode
Type of diode: rectifying
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| SM8S43CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
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| BTA330X-800BTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
| BTA140-600.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 25A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 25A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| P1KSMBJ27AJ |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
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| SMDJ58CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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