Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6330) > Seite 106 nach 106
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
ESDALD12BCX | WeEn Semiconductors |
![]() Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1 Manufacturer series: LD Max. off-state voltage: 12V Semiconductor structure: bidirectional Max. forward impulse current: 10A Breakdown voltage: 13.3V Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.35kW Mounting: SMD Case: SOD323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
WMSC020H12B1P6T | WeEn Semiconductors |
![]() Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 70A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 20mΩ Pulsed drain current: 140A Power dissipation: 118W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
WMSC016H12B1P6T | WeEn Semiconductors |
![]() Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 85A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 16mΩ Pulsed drain current: 170A Power dissipation: 146W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
WMSC040H12B1P6T | WeEn Semiconductors |
![]() Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 40mΩ Pulsed drain current: 90A Power dissipation: 105W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
WMSC010H12B1P6T | WeEn Semiconductors |
![]() Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 107A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 210A Power dissipation: 152W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BT236X-600G,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 6A Type of thyristor: triac Gate current: 50/100mA Max. forward impulse current: 65A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
BT234-800D,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: logic level; sensitive gate Technology: 4Q Max. load current: 4A Type of thyristor: triac Gate current: 10mA Max. forward impulse current: 35A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BT234X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: logic level; sensitive gate Technology: 4Q Max. load current: 4A Type of thyristor: triac Gate current: 25mA Max. forward impulse current: 35A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BT234X-800D,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: logic level; sensitive gate Technology: 4Q Max. load current: 4A Type of thyristor: triac Gate current: 10mA Max. forward impulse current: 35A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BT236X-600,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 6A Type of thyristor: triac Gate current: 35/70mA Max. forward impulse current: 65A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BT236X-600F,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 6A Type of thyristor: triac Gate current: 25/70mA Max. forward impulse current: 65A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BT236X-800,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 6A Type of thyristor: triac Gate current: 35/70mA Max. forward impulse current: 65A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BT236X-800G,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 6A Type of thyristor: triac Gate current: 50/100mA Max. forward impulse current: 65A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
BT236X-800G/L02Q | WeEn Semiconductors |
![]() Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 6A Type of thyristor: triac Gate current: 50/100mA Max. forward impulse current: 65A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BYC15-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC Case: SOD59; TO220AC Max. off-state voltage: 0.6kV Max. forward voltage: 1.4V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 19ns Max. forward impulse current: 200A Type of diode: rectifying Features of semiconductor devices: superfast switching Kind of package: tube Mounting: THT |
auf Bestellung 358 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
SMDJ64CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 64V Breakdown voltage: 71.6...78V Max. forward impulse current: 29.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
5.0SMDJ64CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 48.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
SMCJ40CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.7...48.8V Max. forward impulse current: 23.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
SMDJ51CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 51V Breakdown voltage: 57.1...62.3V Max. forward impulse current: 36.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ACT108-600D,126 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Features of semiconductor devices: internally triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BYT79X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward impulse current: 143A Semiconductor structure: single diode Case: SOD113; TO220FP-2 Mounting: THT Kind of package: tube Max. forward voltage: 1.2V Load current: 15A Reverse recovery time: 50ns |
auf Bestellung 697 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
BYT79-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward impulse current: 143A Semiconductor structure: single diode Case: SOD59; TO220AC Mounting: THT Kind of package: tube Max. forward voltage: 1.2V Load current: 15A Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
SMBJ60CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 67.2...73.2V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BT258S-800R,118 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Case: DPAK Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Mounting: SMD |
auf Bestellung 2388 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
BT258S-800LT,118 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us Case: DPAK Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: reel; tape Type of thyristor: thyristor Mounting: SMD |
auf Bestellung 1188 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
BT258-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us Case: TO220AB Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 0.2mA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: tube Type of thyristor: thyristor Mounting: THT |
auf Bestellung 993 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
BT258X-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Case: TO220FP Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: tube Type of thyristor: thyristor Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BT258U-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A Case: IPAK Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: tube Type of thyristor: thyristor Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BT258X-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Case: TO220FP Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: tube Type of thyristor: thyristor Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BT258X-800R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Case: TO220FP Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Max. forward impulse current: 75A Turn-on time: 2µs Kind of package: tube Type of thyristor: thyristor Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
ESDALD12BCX |
![]() |
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMSC020H12B1P6T |
![]() |
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMSC016H12B1P6T |
![]() |
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMSC040H12B1P6T |
![]() |
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMSC010H12B1P6T |
![]() |
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT236X-600G,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT234-800D,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT234X-600E,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT234X-800D,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT236X-600,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT236X-600F,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT236X-800,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT236X-800G,127 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT236X-800G/L02Q |
![]() |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYC15-600,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Max. forward impulse current: 200A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Kind of package: tube
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Max. forward impulse current: 200A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Kind of package: tube
Mounting: THT
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
106+ | 0.67 EUR |
120+ | 0.60 EUR |
SMDJ64CAJ |
![]() |
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
5.0SMDJ64CAJ |
![]() |
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ40CAJ |
![]() |
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMDJ51CAJ |
![]() |
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ACT108-600D,126 |
![]() |
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYT79X-600,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 50ns
auf Bestellung 697 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
55+ | 1.31 EUR |
71+ | 1.01 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
BYT79-600,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ60CAJ |
![]() |
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258S-800R,118 |
![]() ![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
auf Bestellung 2388 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.40 EUR |
71+ | 1.01 EUR |
221+ | 0.32 EUR |
234+ | 0.31 EUR |
BT258S-800LT,118 |
![]() ![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
auf Bestellung 1188 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
78+ | 0.92 EUR |
197+ | 0.36 EUR |
209+ | 0.34 EUR |
BT258-500R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
84+ | 0.86 EUR |
229+ | 0.31 EUR |
242+ | 0.30 EUR |
BT258X-500R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258U-600R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258X-600R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258X-800R,127 |
![]() |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH