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ESDALD12BCX ESDALD12BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
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WMSC020H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC016H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC040H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BT236X-600G,127 BT236X-600G,127 WeEn Semiconductors bt236x-600g.pdf Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT234-800D,127 WeEn Semiconductors bt234-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT234X-600E,127 WeEn Semiconductors bt234x-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
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BT234X-800D,127 WeEn Semiconductors bt234x-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT236X-600,127 BT236X-600,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-600F,127 BT236X-600F,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-800,127 BT236X-800,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G,127 BT236X-800G,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G/L02Q WeEn Semiconductors bt236x-800g.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Max. forward impulse current: 200A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Kind of package: tube
Mounting: THT
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
106+0.67 EUR
120+0.60 EUR
Mindestbestellmenge: 90
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SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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5.0SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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SMCJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMDJ51CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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ACT108-600D,126 WeEn Semiconductors act108-600d.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
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BYT79X-600,127 BYT79X-600,127 WeEn Semiconductors byt79x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 50ns
auf Bestellung 697 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
55+1.31 EUR
71+1.01 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 41
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BYT79-600,127 BYT79-600,127 WeEn Semiconductors byt79-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 60ns
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SMBJ60CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BT258S-800R,118 BT258S-800R,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
auf Bestellung 2388 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.40 EUR
71+1.01 EUR
221+0.32 EUR
234+0.31 EUR
Mindestbestellmenge: 52
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BT258S-800LT,118 BT258S-800LT,118 WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
auf Bestellung 1188 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
78+0.92 EUR
197+0.36 EUR
209+0.34 EUR
Mindestbestellmenge: 54
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BT258-500R,127 BT258-500R,127 WeEn Semiconductors bt258-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
84+0.86 EUR
229+0.31 EUR
242+0.30 EUR
Mindestbestellmenge: 69
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BT258X-500R,127 BT258X-500R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
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BT258U-600R,127 BT258U-600R,127 WeEn Semiconductors bt258u-600r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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BT258X-600R,127 BT258X-600R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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BT258X-800R,127 BT258X-800R,127 WeEn Semiconductors bt258x-500r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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ESDALD12BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD12BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
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WMSC020H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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WMSC016H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC040H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 210A
Power dissipation: 152W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BT236X-600G,127 bt236x-600g.pdf
BT236X-600G,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT234-800D,127 bt234-800d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT234X-600E,127 bt234x-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT234X-800D,127 bt234x-800d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-600,127
BT236X-600,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT236X-600F,127
BT236X-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT236X-800,127
BT236X-800,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-800G,127
BT236X-800G,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-800G/L02Q bt236x-800g.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BYC15-600,127 byc15-600.pdf
BYC15-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.4V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 19ns
Max. forward impulse current: 200A
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Kind of package: tube
Mounting: THT
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
106+0.67 EUR
120+0.60 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ64CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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SMCJ40CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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SMDJ51CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 57.1÷62.3V; 36.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 51V
Breakdown voltage: 57.1...62.3V
Max. forward impulse current: 36.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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ACT108-600D,126 act108-600d.pdf
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: internally triggered
Produkt ist nicht verfügbar
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BYT79X-600,127 byt79x-600.pdf
BYT79X-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; Ufmax: 1.2V; 50ns
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 50ns
auf Bestellung 697 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
55+1.31 EUR
71+1.01 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
BYT79-600,127 byt79-600.pdf
BYT79-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 143A; SOD59,TO220AC
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 143A
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.2V
Load current: 15A
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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SMBJ60CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.2÷73.2V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.2...73.2V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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BT258S-800R,118 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A5F7B5AC5294274A&compId=BT258S-800R.pdf?ci_sign=e19771a654cdc6a4da8f99f59e3450877d83051d pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800R,118
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
auf Bestellung 2388 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.40 EUR
71+1.01 EUR
221+0.32 EUR
234+0.31 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
BT258S-800LT,118 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B9839D2A0B142143&compId=bt258s-800lt.pdf?ci_sign=fd2d44a2fcd08006089f2cd197087f6795945fd4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
BT258S-800LT,118
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Case: DPAK
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
auf Bestellung 1188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
78+0.92 EUR
197+0.36 EUR
209+0.34 EUR
Mindestbestellmenge: 54
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BT258-500R,127 bt258-500r.pdf
BT258-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Case: TO220AB
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 993 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
84+0.86 EUR
229+0.31 EUR
242+0.30 EUR
Mindestbestellmenge: 69
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BT258X-500R,127 bt258x-500r.pdf
BT258X-500R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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BT258U-600R,127 bt258u-600r.pdf
BT258U-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Case: IPAK
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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BT258X-600R,127 bt258x-500r.pdf
BT258X-600R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
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BT258X-800R,127 bt258x-500r.pdf
BT258X-800R,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Case: TO220FP
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Max. forward impulse current: 75A
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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