Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6469) > Seite 106 nach 108
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BT258X-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT258U-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT258X-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT258X-800R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYV34-400,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: SOT78; TO220AB Max. forward voltage: 0.87V Max. load current: 20A Heatsink thickness: 1.25...1.4mm |
auf Bestellung 1456 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV32E-150,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: SOT78; TO220AB Max. forward voltage: 0.8V Max. load current: 10A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV32E-100,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
auf Bestellung 604 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28X-200,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Max. load current: 10A Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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BTA204-800E.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT139-800E.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate Technology: 4Q |
Produkt ist nicht verfügbar |
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MAC223A6,127 | WeEn Semiconductors |
![]() Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q Mounting: THT Max. off-state voltage: 0.4kV Max. load current: 25A Gate current: 50/75mA Max. forward impulse current: 190A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: TO220AB |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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MAC223A8X,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q Mounting: THT Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 50/75mA Max. forward impulse current: 190A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: TO220FP |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28ED-200,118 | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V Type of diode: rectifying Max. forward impulse current: 55A Semiconductor structure: common cathode; double Mounting: SMD Case: DPAK Max. off-state voltage: 200V Kind of package: reel; tape Reverse recovery time: 25ns Max. forward voltage: 1.25V Features of semiconductor devices: ultrafast switching Load current: 5A x2 Max. load current: 10A |
auf Bestellung 2107 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.68V Max. load current: 40A Max. forward impulse current: 380A Kind of package: tube |
auf Bestellung 733 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CGQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.68V Max. load current: 40A Max. forward impulse current: 380A Kind of package: tube |
Produkt ist nicht verfügbar |
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WNS20H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS20S100CXQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.95V Max. load current: 20A Max. forward impulse current: 120A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT138X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BT138Y-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
WSJM65R170XQ | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 72A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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WNSC2M40120B76J | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 61A Pulsed drain current: 170A Power dissipation: 500W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 56mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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WMS20N700SKX | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Pulsed drain current: 14A Power dissipation: 1.4W Case: SOT23-3 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BYC100W-1200PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns Type of diode: rectifying Case: TO247-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 100A Semiconductor structure: single diode Max. forward voltage: 2.2V Max. forward impulse current: 0.9kA Kind of package: tube Reverse recovery time: 115ns Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYV29X-500,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Max. forward voltage: 1.11V Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
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BYQ28E-200E,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: SOT78; TO220AB Max. forward voltage: 0.895V Max. load current: 10A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28E-200/H,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 50A Case: SOT78; TO220AB Max. forward voltage: 0.8V Max. load current: 10A Heatsink thickness: 1.25...1.4mm |
Produkt ist nicht verfügbar |
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WNSC6D046506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 36A Kind of package: tube Max. forward voltage: 1.55V Max. load current: 8A |
Produkt ist nicht verfügbar |
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SMDJ30CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ Leakage current: 1µA |
Produkt ist nicht verfügbar |
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BTA208S-800B,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA208S-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BTA208-600D,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA208-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA208-600F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BTA208-800F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Mounting: THT Features of semiconductor devices: sensitive gate Case: TO220AB Type of thyristor: triac Kind of package: tube Gate current: 25mA Max. load current: 8A Max. forward impulse current: 65A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
Produkt ist nicht verfügbar |
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BTA208S-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SMDJ30AJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ Leakage current: 1µA |
Produkt ist nicht verfügbar |
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P6SMAL36AX | WeEn Semiconductors |
![]() Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.4A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMAL |
Produkt ist nicht verfügbar |
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P6SMAL75AX | WeEn Semiconductors |
![]() Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMAL |
Produkt ist nicht verfügbar |
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OT412,115 | WeEn Semiconductors |
Category: Triacs Description: Triac; 1A; SOT223; 4Q; sensitive gate Type of thyristor: triac Max. load current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: sensitive gate |
auf Bestellung 777 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC15X-600PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 39ns |
auf Bestellung 1061 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC15X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 200A Case: SOD113; TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 19ns |
Produkt ist nicht verfügbar |
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BYV32E-300PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOT78; TO220AB Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
Produkt ist nicht verfügbar |
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BYV32EB-200PJ | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 125A Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. load current: 20A |
Produkt ist nicht verfügbar |
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BYV32EB-300PJ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 220A Case: D2PAK; SOT404 Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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BYV32EX-300PQ | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WNS30H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.67V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 330A Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220AB |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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ACTT6X-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220FP Gate current: 10mA Mounting: THT Kind of package: tube |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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ACTT6-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 10mA Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BTA202X-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 2A Case: TO220FP Gate current: 10mA Max. forward impulse current: 14A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
ACTT2X-800E,127 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; TO220FP; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 2A Case: TO220FP Gate current: 10mA Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ACTT4X-800E,127 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10mA Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ACTT6G-800E,127 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Case: I2PAK Gate current: 10mA Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BTA202X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 2A Case: TO220FP Gate current: 10mA Max. forward impulse current: 14A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
BTA310-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 10mA Max. forward impulse current: 85A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BTA310X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220FP Gate current: 10mA Max. forward impulse current: 85A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BYC58X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 120A Case: SOD113; TO220FP-2 Max. forward voltage: 2.4V Reverse recovery time: 21ns |
auf Bestellung 943 Stücke: Lieferzeit 14-21 Tag (e) |
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BUJ103A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB Mounting: THT Case: TO220AB Collector-emitter voltage: 400V Current gain: 12...32 Collector current: 4A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BUJ103AX,127 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP Mounting: THT Case: TO220FP Collector-emitter voltage: 400V Current gain: 12...32 Collector current: 4A Type of transistor: NPN Power dissipation: 26W Polarisation: bipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
BUJ103AD,118 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK Mounting: SMD Case: DPAK Collector-emitter voltage: 400V Current gain: 12...32 Collector current: 4A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BT258X-500R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258U-600R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258X-600R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258X-800R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYV34-400,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
auf Bestellung 1456 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
50+ | 1.45 EUR |
86+ | 0.84 EUR |
91+ | 0.79 EUR |
BYV32E-150,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
90+ | 0.8 EUR |
102+ | 0.71 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
BYQ28E-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
BYV32E-100,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
90+ | 0.8 EUR |
102+ | 0.71 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
BYQ28X-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA204-800E.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT139-800E.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAC223A6,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220AB
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220AB
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
53+ | 1.37 EUR |
93+ | 0.77 EUR |
99+ | 0.73 EUR |
MAC223A8X,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220FP
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
48+ | 1.52 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
BYQ28ED-200,118 |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Max. forward impulse current: 55A
Semiconductor structure: common cathode; double
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Kind of package: reel; tape
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Max. forward impulse current: 55A
Semiconductor structure: common cathode; double
Mounting: SMD
Case: DPAK
Max. off-state voltage: 200V
Kind of package: reel; tape
Reverse recovery time: 25ns
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
116+ | 0.62 EUR |
178+ | 0.4 EUR |
188+ | 0.38 EUR |
1000+ | 0.37 EUR |
WNS40H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
auf Bestellung 733 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
81+ | 0.89 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
100+ | 0.74 EUR |
WNS40H100CGQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WNS20H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
169+ | 0.42 EUR |
183+ | 0.39 EUR |
197+ | 0.36 EUR |
202+ | 0.35 EUR |
WNS20S100CXQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
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BT138X-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT138Y-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WSJM65R170XQ |
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Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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WNSC2M40120B76J |
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Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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WMS20N700SKX |
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Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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BYC100W-1200PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.9kA
Kind of package: tube
Reverse recovery time: 115ns
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Max. forward voltage: 2.2V
Max. forward impulse current: 0.9kA
Kind of package: tube
Reverse recovery time: 115ns
Features of semiconductor devices: superfast switching
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BYV29X-500,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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BYQ28E-200E,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
104+ | 0.69 EUR |
120+ | 0.6 EUR |
180+ | 0.4 EUR |
BYQ28E-200/H,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
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WNSC6D046506Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 36A
Kind of package: tube
Max. forward voltage: 1.55V
Max. load current: 8A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 36A
Kind of package: tube
Max. forward voltage: 1.55V
Max. load current: 8A
Produkt ist nicht verfügbar
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SMDJ30CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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BTA208S-800B,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA208S-600D,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA208-600D,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208-600F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208-800F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220AB
Type of thyristor: triac
Kind of package: tube
Gate current: 25mA
Max. load current: 8A
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Mounting: THT
Features of semiconductor devices: sensitive gate
Case: TO220AB
Type of thyristor: triac
Kind of package: tube
Gate current: 25mA
Max. load current: 8A
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA208S-800F,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMDJ30AJ |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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P6SMAL36AX |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 40÷44.2V; 10.4A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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P6SMAL75AX |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷92.1V; 5A; unidirectional; SMA flat; P6SMAL
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMAL
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OT412,115 |
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 1A; SOT223; 4Q; sensitive gate
Type of thyristor: triac
Max. load current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: sensitive gate
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
260+ | 0.28 EUR |
317+ | 0.23 EUR |
338+ | 0.21 EUR |
360+ | 0.2 EUR |
374+ | 0.19 EUR |
BYC15X-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 39ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 39ns
auf Bestellung 1061 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
84+ | 0.86 EUR |
106+ | 0.67 EUR |
113+ | 0.64 EUR |
250+ | 0.62 EUR |
BYC15X-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; Ufmax: 1.4V; 19ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Produkt ist nicht verfügbar
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BYV32E-300PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
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BYV32EB-200PJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Produkt ist nicht verfügbar
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BYV32EB-300PJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 220A
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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BYV32EX-300PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
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WNS30H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
80+ | 0.9 EUR |
97+ | 0.74 EUR |
101+ | 0.72 EUR |
ACTT6X-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
125+ | 0.57 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
500+ | 0.43 EUR |
ACTT6-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA202X-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ACTT2X-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ACTT4X-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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ACTT6G-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; I2PAK; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: I2PAK
Gate current: 10mA
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA202X-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 10mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA310-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA310X-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 85A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BYC58X-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.4V
Reverse recovery time: 21ns
auf Bestellung 943 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
57+ | 1.26 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
500+ | 0.89 EUR |
BUJ103A,127 |
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
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BUJ103AX,127 |
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Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 26W; TO220FP
Mounting: THT
Case: TO220FP
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 26W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
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BUJ103AD,118 |
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Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 80W; DPAK
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 12...32
Collector current: 4A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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