Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6358) > Seite 106 nach 106
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BT138-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; Igt: 35/70mA; TO220AB; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35/70mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MUR860J | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 180A Case: SMC Kind of package: reel; tape Max. forward voltage: 1.25V Reverse recovery time: 90ns Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
P1KSMBJ68CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 10.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BT137S-600D.118 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 5/10mA Case: DPAK Mounting: SMD Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BYV410X-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 120A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 35ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYV410X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 137A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 20ns |
auf Bestellung 725 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BYV410X-600/L01Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 132A Case: SOD113; TO220FP-2 Kind of package: tube Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BT151U-500C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us Type of thyristor: standard Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: IPAK Mounting: THT Max. forward impulse current: 100A Turn-on time: 2µs Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYC100W-1200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns Features of semiconductor devices: superfast switching Max. off-state voltage: 1.2kV Load current: 100A Kind of package: tube Semiconductor structure: single diode Case: TO247-2 Type of diode: rectifying Reverse recovery time: 115ns Mounting: THT Max. forward impulse current: 0.9kA Max. forward voltage: 2.2V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BT138X-600E,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 12A; Igt: 10/25mA; TO220FP; tube; Ifsm: 95A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 10/25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SMBJ40CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.7...48.8V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
ACTT2S-800E,118 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD Mounting: SMD Gate current: 10mA Max. off-state voltage: 0.8kV Max. load current: 2A Kind of package: reel; tape Case: DPAK Type of thyristor: AC switch |
auf Bestellung 2498 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BT151X-800C,127 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT Type of thyristor: standard Max. off-state voltage: 0.8kV Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Max. forward impulse current: 100A Turn-on time: 2µs Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYV415W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; TO247-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: TO247-3 Kind of package: tube Max. forward voltage: 1.1V Max. load current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYV415J-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; SOT1293,TO3PF; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT1293; TO3PF Kind of package: tube Max. forward voltage: 1.1V Max. load current: 30A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SM8S33CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 124A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
ACTT4S-800C,118 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 35mA Case: DPAK Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYT79-500,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 500V; 14A; Ifsm: 130A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 14A Reverse recovery time: 60ns Semiconductor structure: single diode Case: SOD59; TO220AC Max. forward voltage: 0.9V Max. forward impulse current: 130A Kind of package: tube Features of semiconductor devices: ultrafast switching |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYT79X-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD113; TO220FP-2 Max. forward voltage: 1.2V Max. forward impulse current: 143A Kind of package: tube |
auf Bestellung 561 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BYT79-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 60ns Semiconductor structure: single diode Case: SOD59; TO220AC Max. forward voltage: 1.2V Max. forward impulse current: 143A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYT79B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 15A; 60ns; D2PAK,SOT404; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 60ns Semiconductor structure: single diode Case: D2PAK; SOT404 Max. forward voltage: 1.25V Max. forward impulse current: 165A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BTA201-800B,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-600B,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-600E,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BTA201-600E,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-600E/L01EP | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-800E,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BTA201-800E,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-800E,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-800ER,112 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-800ER,116 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-800ER,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA201-800ER,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BUJ106A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 80W Case: TO220AB Current gain: 14...33 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BYV30B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 1.35V Max. forward impulse current: 330A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BYC75W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 700A Case: TO247-2 Kind of package: tube Max. forward voltage: 2.1V Max. load current: 150A Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BYC75W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 750A Case: TO247AC Modified Kind of package: tube Max. forward voltage: 2.1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WG50N65HFW1Q | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 150A Gate charge: 138nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WG50N65DHWQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 123ns Turn-off time: 265ns Gate charge: 160nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
|
N0118GA,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
N0118GA,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
N0118GAML | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
WNS20H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
WNS20S100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. load current: 20A Max. forward impulse current: 120A Kind of package: tube |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BYV42E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 1V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 28ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BYV42EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 160A Case: D2PAK; SOT404 Kind of package: reel; tape Max. forward voltage: 0.85V Max. load current: 30A Reverse recovery time: 28ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BYR29-600,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube Max. off-state voltage: 0.6kV Load current: 8A Case: SOD59; TO220AC Mounting: THT Kind of package: tube Reverse recovery time: 75ns Max. forward impulse current: 66A Max. forward voltage: 1.07V Features of semiconductor devices: ultrafast switching Heatsink thickness: max. 1.3mm Semiconductor structure: single diode Type of diode: rectifying |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SM8S43CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 95.1A Semiconductor structure: bidirectional Case: DO218J Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SM8S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
BTA330X-800BTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 30A Gate current: 50mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 270A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
auf Bestellung 456 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BTA140-600.127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q Typ of triac: standard Max. off-state voltage: 0.6kV Max. load current: 25A Gate current: 35/70mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
P1KSMBJ27AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 26.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SMDJ58CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.9...70.7V Max. forward impulse current: 32.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
EC103D1,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT Type of thyristor: standard Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Case: TO92 Mounting: THT Max. forward impulse current: 8A Kind of package: bulk Turn-on time: 2µs |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
EC103D1WX | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD Type of thyristor: standard Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Case: SOT223 Mounting: SMD Max. forward impulse current: 8A Kind of package: reel; tape Turn-on time: 2µs |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BYQ30E-200,127 | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 88A; SOT78,TO220AB; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 88A Case: SOT78; TO220AB Kind of package: tube Max. forward voltage: 0.84V Max. load current: 16A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
auf Bestellung 934 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
SMDJ28CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.34...34.16V Max. forward impulse current: 66.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
5.0SMDJ28CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 31.1÷34.4V; 110A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 110A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 5.0SMDJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
WNSC2D101200WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 72A Max. forward voltage: 1.88V Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BT138-800.127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; Igt: 35/70mA; TO220AB; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; Igt: 35/70mA; TO220AB; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR860J |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; SMC; Ufmax: 1.25V; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Case: SMC
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 90ns
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P1KSMBJ68CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BT137S-600D.118 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Case: DPAK
Mounting: SMD
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 8A; Igt: 5/10mA; DPAK; Ifsm: 65A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 5/10mA
Case: DPAK
Mounting: SMD
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV410X-600PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 120A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV410X-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 137A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 137A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 20ns
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV410X-600/L01Q |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 132A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 132A
Case: SOD113; TO220FP-2
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BT151U-500C,127 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us
Type of thyristor: standard
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; 2us
Type of thyristor: standard
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC100W-1200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns
Features of semiconductor devices: superfast switching
Max. off-state voltage: 1.2kV
Load current: 100A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 115ns
Mounting: THT
Max. forward impulse current: 0.9kA
Max. forward voltage: 2.2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; Ifsm: 900A; TO247-2; tube; 115ns
Features of semiconductor devices: superfast switching
Max. off-state voltage: 1.2kV
Load current: 100A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 115ns
Mounting: THT
Max. forward impulse current: 0.9kA
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BT138X-600E,127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; Igt: 10/25mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 10/25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; Igt: 10/25mA; TO220FP; tube; Ifsm: 95A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 10/25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ40CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.7÷48.8V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ACTT2S-800E,118 |
|
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 2A
Kind of package: reel; tape
Case: DPAK
Type of thyristor: AC switch
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 2A
Kind of package: reel; tape
Case: DPAK
Type of thyristor: AC switch
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
| BT151X-800C,127 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Max. forward impulse current: 100A
Turn-on time: 2µs
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYV415W-600PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; TO247-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; TO247-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYV415J-600PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; SOT1293,TO3PF; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 150A; SOT1293,TO3PF; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT1293; TO3PF
Kind of package: tube
Max. forward voltage: 1.1V
Max. load current: 30A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SM8S33CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ACTT4S-800C,118 |
|
Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 35mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 35mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYT79-500,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; Ifsm: 130A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; Ifsm: 130A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Max. forward impulse current: 130A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
| BYT79X-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
| BYT79-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 143A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: SOD59; TO220AC
Max. forward voltage: 1.2V
Max. forward impulse current: 143A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYT79B-600PJ |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 60ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. forward impulse current: 165A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15A; 60ns; D2PAK,SOT404; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. forward impulse current: 165A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800B,112 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-600B,112 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 50mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-600E,112 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-600E,126 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-600E/L01EP |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800E,112 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800E,116 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800E,412 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800ER,112 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800ER,116 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800ER,126 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800ER,412 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUJ106A,127 |
|
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV30B-600PJ |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC75W-600PT2Q |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 700A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 700A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC75W-600PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 750A
Case: TO247AC Modified
Kind of package: tube
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 750A
Case: TO247AC Modified
Kind of package: tube
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WG50N65HFW1Q |
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Gate charge: 138nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Gate charge: 138nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WG50N65DHWQ |
|
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 123ns
Turn-off time: 265ns
Gate charge: 160nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 123ns
Turn-off time: 265ns
Gate charge: 160nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| N0118GA,412 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Kind of package: bulk
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N0118GA,116 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| N0118GAML |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WNS20H100CQ |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| WNS20S100CQ |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV42E-200,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; Ifsm: 150A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 1V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 28ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYV42EB-200,118 |
|
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 28ns; D2PAK,SOT404; Ifsm: 160A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 160A
Case: D2PAK; SOT404
Kind of package: reel; tape
Max. forward voltage: 0.85V
Max. load current: 30A
Reverse recovery time: 28ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYR29-600,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube
Max. off-state voltage: 0.6kV
Load current: 8A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Reverse recovery time: 75ns
Max. forward impulse current: 66A
Max. forward voltage: 1.07V
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Semiconductor structure: single diode
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 66A; SOD59,TO220AC; tube
Max. off-state voltage: 0.6kV
Load current: 8A
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Reverse recovery time: 75ns
Max. forward impulse current: 66A
Max. forward voltage: 1.07V
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Semiconductor structure: single diode
Type of diode: rectifying
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| SM8S43CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 47.8÷52.8V; 95.1A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 95.1A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA330X-800BTQ |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 30A; Igt: 50mA; TO220FP; tube; Ifsm: 270A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 30A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 270A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
| BTA140-600.127 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 25A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 25A; Igt: 35/70mA; TO220AB; tube; Ifsm: 190A; 4Q
Typ of triac: standard
Max. off-state voltage: 0.6kV
Max. load current: 25A
Gate current: 35/70mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P1KSMBJ27AJ |
|
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMDJ58CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EC103D1,412 |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
Turn-on time: 2µs
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| EC103D1WX |
|
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Max. forward impulse current: 8A
Kind of package: reel; tape
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor: standard; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Max. forward impulse current: 8A
Kind of package: reel; tape
Turn-on time: 2µs
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
| BYQ30E-200,127 |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 88A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 0.84V
Max. load current: 16A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 88A; SOT78,TO220AB; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 88A
Case: SOT78; TO220AB
Kind of package: tube
Max. forward voltage: 0.84V
Max. load current: 16A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
| SMDJ28CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.34...34.16V
Max. forward impulse current: 66.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.34÷34.16V; 66.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.34...34.16V
Max. forward impulse current: 66.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 5.0SMDJ28CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 31.1÷34.4V; 110A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 110A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 31.1÷34.4V; 110A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 110A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WNSC2D101200WQ |
|
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Max. forward voltage: 1.88V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Max. forward voltage: 1.88V
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH