Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6412) > Seite 106 nach 107
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BT258-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 0.2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
auf Bestellung 991 Stücke: Lieferzeit 14-21 Tag (e) |
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BT258X-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BT258U-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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BT258X-600R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BT258X-800R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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BYV34-500,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB Mounting: THT Max. off-state voltage: 500V Max. load current: 20A Max. forward voltage: 0.87V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 132A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV34-400,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: SOT78; TO220AB Max. forward voltage: 0.87V Max. load current: 20A Heatsink thickness: 1.25...1.4mm |
auf Bestellung 1456 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV32E-150,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: SOT78; TO220AB Max. forward voltage: 0.8V Max. load current: 10A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV32E-100,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
auf Bestellung 604 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ30E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB Mounting: THT Max. off-state voltage: 200V Max. load current: 16A Max. forward voltage: 0.84V Load current: 8A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 88A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.25...1.4mm Case: SOT78; TO220AB |
auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV74W-400,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns Mounting: THT Max. off-state voltage: 0.4kV Max. load current: 30A Max. forward voltage: 1.36V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 60ns Max. forward impulse current: 185A Kind of package: tube Type of diode: rectifying Case: TO247-3 |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV72EW-200,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns Mounting: THT Max. off-state voltage: 200V Max. load current: 30A Max. forward voltage: 1.2V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 28ns Max. forward impulse current: 185A Kind of package: tube Type of diode: rectifying Case: TO247-3 |
auf Bestellung 763 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV410X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V Mounting: THT Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 20ns Max. forward impulse current: 137A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 |
auf Bestellung 1469 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28X-200,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Max. load current: 10A Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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BTA204-800E.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT139-800E.127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate Technology: 4Q |
Produkt ist nicht verfügbar |
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EC103D1,412 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 8A Turn-on time: 2µs |
auf Bestellung 1424 Stücke: Lieferzeit 14-21 Tag (e) |
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EC103D1WX | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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EC103D1,116 | WeEn Semiconductors |
![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 3µA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 8A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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EC103D1WF | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 12µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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BTA45-800BQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q Max. off-state voltage: 0.8kV Max. load current: 45A Gate current: 50mA Max. forward impulse current: 495A Kind of package: tube Features of semiconductor devices: high temperature Technology: 4Q Type of thyristor: triac Mounting: THT Case: SOT1292; TO3P |
Produkt ist nicht verfügbar |
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MAC223A6,127 | WeEn Semiconductors |
![]() Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q Mounting: THT Max. off-state voltage: 0.4kV Max. load current: 25A Gate current: 50/75mA Max. forward impulse current: 190A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: TO220AB |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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MAC223A8X,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q Mounting: THT Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 50/75mA Max. forward impulse current: 190A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: TO220FP |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28ED-200,118 | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 55A Case: DPAK Max. forward voltage: 1.25V Max. load current: 10A Reverse recovery time: 25ns |
auf Bestellung 2313 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.68V Max. load current: 40A Max. forward impulse current: 380A Kind of package: tube |
auf Bestellung 733 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS40H100CGQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.68V Max. load current: 40A Max. forward impulse current: 380A Kind of package: tube |
Produkt ist nicht verfügbar |
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WNS20H100CQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS20S100CXQ | WeEn Semiconductors |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.95V Max. load current: 20A Max. forward impulse current: 120A Kind of package: tube |
Produkt ist nicht verfügbar |
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BT138X-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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BT138Y-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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WNSC6D40650CW-A6Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 40A Max. forward impulse current: 140A Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
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BYC20D-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC Load current: 20A Semiconductor structure: single diode Reverse recovery time: 20ns Max. forward impulse current: 275A Kind of package: tube Type of diode: rectifying Mounting: THT Case: SOD59; TO220AC Max. off-state voltage: 0.6kV Max. forward voltage: 1.97V |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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TYN16X-600CT,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 15mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 180A Turn-on time: 2µs |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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WSJM65R170XQ | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 72A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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ACTT4S-800E,118 | WeEn Semiconductors |
![]() Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD Max. off-state voltage: 0.8kV Max. load current: 4A Gate current: 10mA Kind of package: reel; tape Type of thyristor: AC switch Mounting: SMD Case: DPAK |
auf Bestellung 2281 Stücke: Lieferzeit 14-21 Tag (e) |
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WNSC2M40120B76J | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 61A Pulsed drain current: 170A Power dissipation: 500W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 56mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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WMS20N700SKX | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Pulsed drain current: 14A Power dissipation: 1.4W Case: SOT23-3 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BYC100W-1200PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 0.9kA Case: TO247-2 Max. forward voltage: 2.2V Reverse recovery time: 115ns |
Produkt ist nicht verfügbar |
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BYV29X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Max. forward voltage: 1.11V Reverse recovery time: 60ns |
auf Bestellung 542 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV29X-500,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: SOD113; TO220FP-2 Max. forward voltage: 1.11V Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
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BYV29FD-600,118 | WeEn Semiconductors |
![]() Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward voltage: 1.25V Max. forward impulse current: 91A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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WNSC2M75120R6Q | WeEn Semiconductors |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 38.1A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 366W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 62nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
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BYC20X-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 274A Case: SOD113; TO220FP-2 Max. forward voltage: 2.05V Reverse recovery time: 40ns |
Produkt ist nicht verfügbar |
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BYC20X-600PQ | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: SOD113; TO220FP-2 Max. forward voltage: 1.6V Max. load current: 40A Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
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BYQ28E-200E,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: SOT78; TO220AB Max. forward voltage: 0.895V Max. load current: 10A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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BYQ28E-200/H,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 50A Case: SOT78; TO220AB Max. forward voltage: 0.8V Max. load current: 10A Heatsink thickness: 1.25...1.4mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
WNSC6D046506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 8A Max. forward impulse current: 36A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BYC8-600P,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: SOD59; TO220AC Max. forward voltage: 1.9V Reverse recovery time: 18ns |
auf Bestellung 915 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC8D-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 60A Case: SOD59; TO220AC Max. forward voltage: 1.85V Reverse recovery time: 40ns |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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BYC8DX-600,127 | WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 55A Case: SOD113; TO220FP-2 Max. forward voltage: 1.5V Reverse recovery time: 20ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SMDJ30CAJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BTA208S-800B,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTA208S-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTA208-600D,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTA208-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTA208-600F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTA208-800F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTA208S-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SMDJ30AJ | WeEn Semiconductors |
![]() Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.6...36.59V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BT258-500R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 200uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 0.2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
84+ | 0.86 EUR |
229+ | 0.31 EUR |
242+ | 0.3 EUR |
BT258X-500R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258U-600R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; IPAK; THT; tube; Ifsm: 75A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258X-600R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT258X-800R,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYV34-500,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 500V
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 500V
Max. load current: 20A
Max. forward voltage: 0.87V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 132A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.92 EUR |
52+ | 1.39 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
BYV34-400,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 120A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: SOT78; TO220AB
Max. forward voltage: 0.87V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
auf Bestellung 1456 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
50+ | 1.45 EUR |
86+ | 0.84 EUR |
91+ | 0.79 EUR |
BYV32E-150,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
90+ | 0.8 EUR |
102+ | 0.71 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
BYQ28E-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
BYV32E-100,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
90+ | 0.8 EUR |
102+ | 0.71 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
BYQ30E-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 0.84V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 88A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 88A; SOT78,TO220AB
Mounting: THT
Max. off-state voltage: 200V
Max. load current: 16A
Max. forward voltage: 0.84V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 88A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
90+ | 0.8 EUR |
111+ | 0.65 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
BYV74W-400,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 185A; TO247-3; 60ns
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 30A
Max. forward voltage: 1.36V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
50+ | 1.44 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
BYV72EW-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Mounting: THT
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 1.2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 185A; TO247-3; 28ns
Mounting: THT
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 1.2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 28ns
Max. forward impulse current: 185A
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
55+ | 1.32 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
BYV410X-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 20ns
Max. forward impulse current: 137A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
auf Bestellung 1469 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
57+ | 1.27 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
BYQ28X-200,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA204-800E.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT139-800E.127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EC103D1,412 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; bulk; Ifsm: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 1424 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
463+ | 0.15 EUR |
532+ | 0.13 EUR |
618+ | 0.12 EUR |
782+ | 0.092 EUR |
820+ | 0.087 EUR |
EC103D1WX |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
128+ | 0.56 EUR |
EC103D1,116 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 3uA; TO92; THT; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 3µA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 8A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EC103D1WF |
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 12uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 12µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9A
Turn-on time: 2µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTA45-800BQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 4Q
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MAC223A6,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220AB
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220AB
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
53+ | 1.37 EUR |
93+ | 0.77 EUR |
99+ | 0.73 EUR |
MAC223A8X,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220FP
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Mounting: THT
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: TO220FP
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
48+ | 1.52 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
BYQ28ED-200,118 |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 55A
Case: DPAK
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 55A
Case: DPAK
Max. forward voltage: 1.25V
Max. load current: 10A
Reverse recovery time: 25ns
auf Bestellung 2313 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
116+ | 0.62 EUR |
178+ | 0.4 EUR |
188+ | 0.38 EUR |
1000+ | 0.37 EUR |
WNS40H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
auf Bestellung 733 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
81+ | 0.89 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
100+ | 0.74 EUR |
WNS40H100CGQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; I2PAK; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WNS20H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
169+ | 0.42 EUR |
183+ | 0.39 EUR |
197+ | 0.36 EUR |
202+ | 0.35 EUR |
WNS20S100CXQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT138X-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BT138Y-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WNSC6D40650CW-A6Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 140A
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 40A
Max. forward impulse current: 140A
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BYC20D-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 275A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.97V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 275A; SOD59,TO220AC
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 275A
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: SOD59; TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.97V
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
74+ | 0.98 EUR |
92+ | 0.78 EUR |
97+ | 0.74 EUR |
250+ | 0.72 EUR |
TYN16X-600CT,127 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
140+ | 0.51 EUR |
178+ | 0.4 EUR |
222+ | 0.33 EUR |
WSJM65R170XQ |
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Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ACTT4S-800E,118 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Mounting: SMD
Case: DPAK
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Kind of package: reel; tape
Type of thyristor: AC switch
Mounting: SMD
Case: DPAK
auf Bestellung 2281 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
141+ | 0.51 EUR |
191+ | 0.37 EUR |
200+ | 0.36 EUR |
202+ | 0.35 EUR |
250+ | 0.34 EUR |
WNSC2M40120B76J |
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Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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WMS20N700SKX |
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Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 14A; 1.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 14A
Power dissipation: 1.4W
Case: SOT23-3
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BYC100W-1200PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 100A; tube; Ifsm: 900A; TO247-2; 115ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.9kA
Case: TO247-2
Max. forward voltage: 2.2V
Reverse recovery time: 115ns
Produkt ist nicht verfügbar
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BYV29X-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
auf Bestellung 542 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
94+ | 0.76 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
BYV29X-500,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 100A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.11V
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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BYV29FD-600,118 |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 1.25V
Max. forward impulse current: 91A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 9A; DPAK; Ufmax: 1.25V; Ifsm: 91A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 1.25V
Max. forward impulse current: 91A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC2M75120R6Q |
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Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 38.1A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 366W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 100A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 38.1A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 366W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 62nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BYC20X-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 274A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.05V
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 274A; Ufmax: 2.05V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 274A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.05V
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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BYC20X-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.6V
Max. load current: 40A
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 270A; Ufmax: 1.6V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.6V
Max. load current: 40A
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BYQ28E-200E,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 55A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOT78; TO220AB
Max. forward voltage: 0.895V
Max. load current: 10A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
128+ | 0.56 EUR |
142+ | 0.5 EUR |
200+ | 0.36 EUR |
BYQ28E-200/H,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; tube; Ifsm: 50A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: SOT78; TO220AB
Max. forward voltage: 0.8V
Max. load current: 10A
Heatsink thickness: 1.25...1.4mm
Produkt ist nicht verfügbar
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WNSC6D046506Q |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 8A
Max. forward impulse current: 36A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 8A
Max. forward impulse current: 36A
Kind of package: tube
Produkt ist nicht verfügbar
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BYC8-600P,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: SOD59; TO220AC
Max. forward voltage: 1.9V
Reverse recovery time: 18ns
auf Bestellung 915 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
163+ | 0.44 EUR |
182+ | 0.39 EUR |
188+ | 0.38 EUR |
193+ | 0.37 EUR |
500+ | 0.36 EUR |
BYC8D-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 60A
Case: SOD59; TO220AC
Max. forward voltage: 1.85V
Reverse recovery time: 40ns
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 0.99 EUR |
BYC8DX-600,127 |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
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SMDJ30CAJ |
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Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Produkt ist nicht verfügbar
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BTA208S-800B,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BTA208S-600D,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA208-600D,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BTA208-600E,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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BTA208-600F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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BTA208-800F,127 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BTA208S-800F,118 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMDJ30AJ |
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Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.6÷36.59V; 62A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.6...36.59V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Leakage current: 1µA
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