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WMSC030H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
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BTA201-800ER,126 BTA201-800ER,126 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
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SMDJ58CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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BYV10X-600PQ BYV10X-600PQ WeEn Semiconductors byv10x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.6V
Reverse recovery time: 50ns
auf Bestellung 1437 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
86+0.84 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 70
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BYV10-600PQ BYV10-600PQ WeEn Semiconductors byv10-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: SOD59; TO220AC
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BYV10D-600PJ BYV10D-600PJ WeEn Semiconductors BYV10D-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BYV10ED-600PJ BYV10ED-600PJ WeEn Semiconductors byv10ed-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BYV10EX-600PQ BYV10EX-600PQ WeEn Semiconductors byv10ex-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BYV10MX-600PQ BYV10MX-600PQ WeEn Semiconductors BYV10MX-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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BUJ105A,127 BUJ105A,127 WeEn Semiconductors Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
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BUJ105AD,118 WeEn Semiconductors buj105ad_1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
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BUJ105AB,118 WeEn Semiconductors buj105ab.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 125W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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SMBJ78AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BTA201-800B,112 BTA201-800B,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800E,112 BTA201-800E,112 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,116 BTA201-800E,116 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA201-800E,412 BTA201-800E,412 WeEn Semiconductors bta201-800e.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800ER,112 BTA201-800ER,112 WeEn Semiconductors BTA201-800ER_112.pdf bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800ER,116 BTA201-800ER,116 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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5.0SMDJ78CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT153B-1200TJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
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BT132-600D,116 BT132-600D,116 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Produkt ist nicht verfügbar
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BT132-600D,412 BT132-600D,412 WeEn Semiconductors bt132-600d.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Produkt ist nicht verfügbar
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TYN12B-600LTJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEB24B9E8260C0C4&compId=TYN12B-600LT.pdf?ci_sign=edb6673df5e709a511bdba5a23ca053fe6b60863 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Max. forward impulse current: 120A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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SMCJ36CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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P6SMBJ28CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT151X-800C,127 BT151X-800C,127 WeEn Semiconductors bt151x-800c.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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TOPT16-800C0,127 TOPT16-800C0,127 WeEn Semiconductors topt16-800c0.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
50+1.46 EUR
55+1.3 EUR
56+1.29 EUR
59+1.23 EUR
100+1.19 EUR
Mindestbestellmenge: 45
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WNSC10650T6J WeEn Semiconductors WNSC10650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPLQSC106506Q NXPLQSC106506Q WeEn Semiconductors nxplqsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
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BT153B-1200T-AJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
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WNSC06650T6J WeEn Semiconductors WNSC06650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC08650T6J WeEn Semiconductors WNSC08650T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 57A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D06650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0F5B6FA6020D4&compId=WNSC5D06650T6J.pdf?ci_sign=af254bc2354266f10fcc72ad83d382ef9b42e6c3 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 36A
Kind of package: reel; tape
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D06650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D10A7DA25180D4&compId=WNSC6D06650T6J.pdf?ci_sign=6758f818888d7c91e977ded830e37bf03325b4ac Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 45A
Kind of package: reel; tape
Max. forward voltage: 1.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D10650T6J WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E62AA91896E0D6&compId=WNSC6D10650T6J.pdf?ci_sign=d57ade27ac012577c88c72e4f6678c8a9b98fabc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD12BCX ESDALD12BCX WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81 Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC020H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC016H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC040H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMSC010H12B1P6T WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Power dissipation: 152W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 210A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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BT236X-600G,127 BT236X-600G,127 WeEn Semiconductors bt236x-600g.pdf Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT234-800D,127 WeEn Semiconductors bt234-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT234X-600E,127 WeEn Semiconductors bt234x-600e.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT234X-800D,127 WeEn Semiconductors bt234x-800d.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-600,127 BT236X-600,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT236X-600F,127 BT236X-600F,127 WeEn Semiconductors Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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BT236X-800,127 BT236X-800,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-800G,127 BT236X-800G,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-800G/L02Q WeEn Semiconductors bt236x-800g.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BYC15-600,127 BYC15-600,127 WeEn Semiconductors byc15-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
106+0.67 EUR
120+0.6 EUR
121+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ64CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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SMCJ40CAJ WeEn Semiconductors pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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WMSC030H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDE1A264DE80D6&compId=WMSC030H12B1P6T.pdf?ci_sign=1a4928565b4e4a2baa6b6b0a4d9949ba1263e13e
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 30mΩ
Pulsed drain current: 100A
Power dissipation: 111W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTA201-800ER,126 bta201-800er.pdf
BTA201-800ER,126
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMDJ58CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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BYV10X-600PQ byv10x-600p.pdf
BYV10X-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.6V
Reverse recovery time: 50ns
auf Bestellung 1437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
86+0.84 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BYV10-600PQ byv10-600p.pdf
BYV10-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: SOD59; TO220AC
Produkt ist nicht verfügbar
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BYV10D-600PJ BYV10D-600P.pdf
BYV10D-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 120A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV10ED-600PJ byv10ed-600p.pdf
BYV10ED-600PJ
Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; DPAK; Ifsm: 70A; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV10EX-600PQ byv10ex-600p.pdf
BYV10EX-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BYV10MX-600PQ BYV10MX-600P.pdf
BYV10MX-600PQ
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
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BUJ105A,127
BUJ105A,127
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
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BUJ105AD,118 buj105ad_1.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; DPAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
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BUJ105AB,118 buj105ab.pdf
Hersteller: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 125W; D2PAK
Collector-emitter voltage: 400V
Current gain: 13...36
Collector current: 8A
Type of transistor: NPN
Power dissipation: 125W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ78AJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8DF4B0A7CA520D3&compId=SMBJ%20Series.pdf?ci_sign=c2e2639ad995680535099c30dd49aa24a201c471
Hersteller: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 87.4÷95.1V; 4.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 87.4...95.1V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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BTA201-800B,112 bta201-800e.pdf
BTA201-800B,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 50mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 50mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800E,112 bta201-800e.pdf
BTA201-800E,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800E,116 bta201-800e.pdf
BTA201-800E,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTA201-800E,412 bta201-800e.pdf
BTA201-800E,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BTA201-800ER,112 BTA201-800ER_112.pdf bta201-800er.pdf
BTA201-800ER,112
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Produkt ist nicht verfügbar
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BTA201-800ER,116 bta201-800er.pdf
BTA201-800ER,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
5.0SMDJ78CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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BT153B-1200TJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CBBDE9499020D6&compId=BT153B-1200T.pdf?ci_sign=67ab5288c3663ed0afc499b3e531425357b2235b
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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BT132-600D,116
BT132-600D,116
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Produkt ist nicht verfügbar
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BT132-600D,412 bt132-600d.pdf
BT132-600D,412
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/10mA; Ifsm: 16A; 4Q; sensitive gate
Max. off-state voltage: 0.6kV
Max. load current: 1A
Gate current: 5/10mA
Max. forward impulse current: 16A
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Mounting: THT
Case: TO92
Produkt ist nicht verfügbar
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TYN12B-600LTJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEB24B9E8260C0C4&compId=TYN12B-600LT.pdf?ci_sign=edb6673df5e709a511bdba5a23ca053fe6b60863 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; D2PAK; SMD; reel,tape
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Max. forward impulse current: 120A
Turn-on time: 2µs
Kind of package: reel; tape
Type of thyristor: thyristor
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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SMCJ36CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40.3÷43.9V; 25.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40.3...43.9V
Max. forward impulse current: 25.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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P6SMBJ28CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CADF9A40DCA0D6&compId=P6SMBJ.pdf?ci_sign=549054d3bd78afb23b6bad8a4db93bf1e0463454
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BT151X-800C,127 bt151x-800c.pdf
BT151X-800C,127
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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TOPT16-800C0,127 topt16-800c0.pdf
TOPT16-800C0,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Protection: anti-overload OPP; overheating OTP
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
50+1.46 EUR
55+1.3 EUR
56+1.29 EUR
59+1.23 EUR
100+1.19 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WNSC10650T6J WNSC10650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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NXPLQSC106506Q nxplqsc10650.pdf
NXPLQSC106506Q
Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 48A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BT153B-1200T-AJ pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD96D58C7D5840C4&compId=BT153B-1200T-A.pdf?ci_sign=eff89ee9663c312cdc19717d11d6457989dd2210 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB5ADF7A47D1E60C7&compId=_ween_psg2020.pdf?ci_sign=468e6aeff5ff673b9b681e7e7132f302dc444c36
Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 350A
Turn-on time: 2µs
Application: automotive industry
Produkt ist nicht verfügbar
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WNSC06650T6J WNSC06650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC08650T6J WNSC08650T.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 48A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WNSC12650T6J WNSC12650T_0.pdf
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 57A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC5D06650T6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D0F5B6FA6020D4&compId=WNSC5D06650T6J.pdf?ci_sign=af254bc2354266f10fcc72ad83d382ef9b42e6c3
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 36A
Kind of package: reel; tape
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D06650T6J pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8D10A7DA25180D4&compId=WNSC6D06650T6J.pdf?ci_sign=6758f818888d7c91e977ded830e37bf03325b4ac
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. load current: 12A
Max. forward impulse current: 45A
Kind of package: reel; tape
Max. forward voltage: 1.55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D10650T6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93E62AA91896E0D6&compId=WNSC6D10650T6J.pdf?ci_sign=d57ade27ac012577c88c72e4f6678c8a9b98fabc
Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8N
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. load current: 20A
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESDALD12BCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8ACDD98BB2B100C8&compId=ESDALDxxBC.pdf?ci_sign=25186217f24567f8ce5688ca1a3a95f9c307be81
ESDALD12BCX
Hersteller: WeEn Semiconductors
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Manufacturer series: LD
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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WMSC020H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDEB1E575360D6&compId=WMSC020H12B1P6T.pdf?ci_sign=e2a8cc051407d7807f4261aa3a91210a07aae8f6
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 70A; Press-in PCB; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 70A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 20mΩ
Pulsed drain current: 140A
Power dissipation: 118W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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WMSC016H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDF815500640D6&compId=WMSC016H12B1P6T.pdf?ci_sign=3bcb71c351b15555774bc110f49d362630617eed
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 85A; Press-in PCB; Idm: 170A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 85A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 16mΩ
Pulsed drain current: 170A
Power dissipation: 146W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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WMSC040H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDCA811C4160D6&compId=WMSC040H12B1P6T.pdf?ci_sign=9fdd7604d4d1a9d58ca37905ec595fbb2c9d449f
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; Press-in PCB; Idm: 90A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 40mΩ
Pulsed drain current: 90A
Power dissipation: 105W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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WMSC010H12B1P6T pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CDFE5D1E2EE0D6&compId=WMSC010H12B1P6T.pdf?ci_sign=af9303de10726d0e12bf4348eb5126fae3b5069b
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
On-state resistance: 10mΩ
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 107A
Power dissipation: 152W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 210A
Type of semiconductor module: MOSFET transistor
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BT236X-600G,127 bt236x-600g.pdf
BT236X-600G,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT234-800D,127 bt234-800d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
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BT234X-600E,127 bt234x-600e.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 25mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.6kV
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BT234X-800D,127 bt234x-800d.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 35A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level; sensitive gate
Technology: 4Q
Max. load current: 4A
Type of thyristor: triac
Gate current: 10mA
Max. forward impulse current: 35A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BT236X-600,127
BT236X-600,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-600F,127
BT236X-600F,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 6A; TO220FP; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 25/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
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BT236X-800,127
BT236X-800,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 35/70mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G,127
BT236X-800G,127
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
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BT236X-800G/L02Q bt236x-800g.pdf
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 50/100mA; Ifsm: 65A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 6A
Type of thyristor: triac
Gate current: 50/100mA
Max. forward impulse current: 65A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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BYC15-600,127 byc15-600.pdf
BYC15-600,127
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
106+0.67 EUR
120+0.6 EUR
121+0.59 EUR
Mindestbestellmenge: 90
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SMDJ64CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E74FCDD7F0E0D4&compId=SMDJ%20Series.pdf?ci_sign=a6572f21ae2ae1b136361c5522d6aa7958ae3b4e
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 71.6÷78V; 29.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 64V
Breakdown voltage: 71.6...78V
Max. forward impulse current: 29.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Produkt ist nicht verfügbar
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5.0SMDJ64CAJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDF93CB4B46CB0740D6&compId=5.0SMDJ.pdf?ci_sign=c37a315eafc62d30583282b11187d21015361a80
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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SMCJ40CAJ pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E6732630A480D4&compId=SMCJ%20Series.pdf?ci_sign=f3cf1e6589e612d15b96054b0475d78a31b97111
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.7÷48.8V; 23.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.7...48.8V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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