Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6259) > Seite 105 nach 105
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| BT1308W-400D,135 | WeEn Semiconductors |
 Category: TriacsDescription: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate Mounting: SMD Max. off-state voltage: 0.4kV Max. load current: 0.8A Gate current: 5/7mA Max. forward impulse current: 10A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SOT223 |
Produkt ist nicht verfügbar |
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| BT1308W-600D,135 | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate Mounting: SMD Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5/7mA Max. forward impulse current: 10A Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Case: SOT223 |
Produkt ist nicht verfügbar |
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| MCR100W-10MF | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1kV Max. load current: 1.25A Load current: 0.8A Gate current: 90µA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 23A |
Produkt ist nicht verfügbar |
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| ACTT6-800E,127 | WeEn Semiconductors |
Category: Thyristors - others Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 6A Gate current: 10mA Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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WNSC10650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 50A Kind of package: tube |
Produkt ist nicht verfügbar |
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WNSC12650WQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 72A Kind of package: tube |
Produkt ist nicht verfügbar |
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| BTA425Z-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. load current: 25A Type of thyristor: triac Gate current: 35mA Max. forward impulse current: 250A Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate |
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| BTA425X-800BT/L02Q | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. load current: 25A Type of thyristor: triac Gate current: 50mA Max. forward impulse current: 275A Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
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BTA425X-800BQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. load current: 25A Type of thyristor: triac Gate current: 50mA Max. forward impulse current: 250A Max. off-state voltage: 0.8kV Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
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BTA425Y-800CTQ | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Max. load current: 25A Type of thyristor: triac Gate current: 35mA Max. forward impulse current: 250A Max. off-state voltage: 0.8kV Features of semiconductor devices: high temperature; sensitive gate |
Produkt ist nicht verfügbar |
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BT168E,112 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Kind of package: bulk Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 0.8A Load current: 0.5A Gate current: 50µA Max. forward impulse current: 8A Turn-on time: 2µs |
Produkt ist nicht verfügbar |
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BYV32EB-200PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 125A Kind of package: reel; tape |
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BYV32EB-300PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 1.25V Max. load current: 20A Max. forward impulse current: 220A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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WNS30H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220AB Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.67V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 330A |
auf Bestellung 605 Stücke: Lieferzeit 14-21 Tag (e) |
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WNS30H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.67V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 330A |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMSC030H12B1P6T | WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A On-state resistance: 30mΩ Power dissipation: 111W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...18V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 100A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 53A |
Produkt ist nicht verfügbar |
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BTA201-800ER,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: Ammo Pack Features of semiconductor devices: sensitive gate Max. forward impulse current: 12.5A |
Produkt ist nicht verfügbar |
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| SMDJ58CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 58V Breakdown voltage: 64.9...70.7V Max. forward impulse current: 32.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMDJ |
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BT136-600E | WeEn Semiconductors |
Category: Triacs Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate Technology: 4Q |
Produkt ist nicht verfügbar |
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| BT1308W-400D,135 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Category: Triacs
Description: Triac; 400V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Produkt ist nicht verfügbar
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| BT1308W-600D,135 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Category: Triacs
Description: Triac; 600V; 0.8A; SOT223; Igt: 5/7mA; Ifsm: 10A; 4Q; sensitive gate
Mounting: SMD
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5/7mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Case: SOT223
Produkt ist nicht verfügbar
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| MCR100W-10MF |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 90µA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 23A
Produkt ist nicht verfügbar
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| ACTT6-800E,127 |
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Hersteller: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 6A; Igt: 10mA; TO220AB; THT; tube
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 6A
Gate current: 10mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| WNSC10650WQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 50A
Kind of package: tube
Produkt ist nicht verfügbar
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| WNSC12650WQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 72A
Kind of package: tube
Produkt ist nicht verfügbar
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| BTA425Z-800CTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
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| BTA425X-800BT/L02Q |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 275A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 275A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature
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| BTA425X-800BQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 50mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
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| BTA425Y-800CTQ |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Max. load current: 25A
Type of thyristor: triac
Gate current: 35mA
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Produkt ist nicht verfügbar
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| BT168E,112 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Produkt ist nicht verfügbar
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| BYV32EB-200PJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
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| BYV32EB-300PJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| WNS30H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 106+ | 0.68 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| 250+ | 0.54 EUR |
| WNS30H100CBJ |
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Hersteller: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.67V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 66+ | 1.09 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| WMSC030H12B1P6T |
|
Hersteller: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
On-state resistance: 30mΩ
Power dissipation: 111W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A
On-state resistance: 30mΩ
Power dissipation: 111W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...18V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 53A
Produkt ist nicht verfügbar
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| BTA201-800ER,126 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 12.5A
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 12.5A
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| SMDJ58CAJ |
|
Hersteller: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.9÷70.7V; 32.1A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.9...70.7V
Max. forward impulse current: 32.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMDJ
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| BT136-600E |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Produkt ist nicht verfügbar
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