Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (6254) > Seite 105 nach 105
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BTA201-800ER,116 | WeEn Semiconductors |
 Category: TriacsDescription: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: reel; tape Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BTA201-800ER,126 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BTA201-800ER,412 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 1A Gate current: 10mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 12.5A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BUJ106A,127 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 80W Case: TO220AB Current gain: 14...33 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BYV30B-600PJ | WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 1.35V Max. forward impulse current: 330A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BYC75W-600PT2Q | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 700A Case: TO247-2 Kind of package: tube Max. forward voltage: 2.1V Max. load current: 150A Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BYC75W-600PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 750A Case: TO247AC Modified Kind of package: tube Max. forward voltage: 2.1V Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WG50N65HFW1Q | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 150A Gate charge: 138nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WG50N65DHWQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 123ns Turn-off time: 265ns Gate charge: 160nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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N0118GA,412 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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N0118GA,116 | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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N0118GAML | WeEn Semiconductors |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT Case: TO92 Type of thyristor: standard Mounting: THT Max. forward impulse current: 9A Gate current: 7µA Max. off-state voltage: 0.6kV Load current: 0.51A Max. load current: 0.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WNS20H100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.7V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WNS20S100CQ | WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. load current: 20A Max. forward impulse current: 120A Kind of package: tube |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BTA201-800ER,116 |
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Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; reel,tape; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800ER,126 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; Ammo Pack; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTA201-800ER,412 |
|
Hersteller: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; Igt: 10mA; TO92; bulk; Ifsm: 12.5A; 3Q,Hi-Com
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 1A
Gate current: 10mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| BUJ106A,127 |
|
Hersteller: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 10A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 80W
Case: TO220AB
Current gain: 14...33
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BYV30B-600PJ |
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Hersteller: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC75W-600PT2Q |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 700A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 700A; TO247-2; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 700A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Max. load current: 150A
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BYC75W-600PQ |
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Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 750A
Case: TO247AC Modified
Kind of package: tube
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; Ifsm: 750A; TO247AC Modified
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 750A
Case: TO247AC Modified
Kind of package: tube
Max. forward voltage: 2.1V
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WG50N65HFW1Q |
Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Gate charge: 138nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Gate charge: 138nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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| WG50N65DHWQ |
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Hersteller: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 123ns
Turn-off time: 265ns
Gate charge: 160nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 123ns
Turn-off time: 265ns
Gate charge: 160nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| N0118GA,412 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Kind of package: bulk
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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| N0118GA,116 |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| N0118GAML |
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Hersteller: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.51A; Igt: 7uA; TO92; THT
Case: TO92
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 9A
Gate current: 7µA
Max. off-state voltage: 0.6kV
Load current: 0.51A
Max. load current: 0.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WNS20H100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.7V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| WNS20S100CQ |
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Hersteller: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 20A
Max. forward impulse current: 120A
Kind of package: tube
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)