Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5639) > Seite 67 nach 94
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MBRH240150 | GeneSiC Semiconductor |
 Discrete Semiconductor Modules 150V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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GBL208 | GeneSiC Semiconductor | Bridge Rectifiers 800V 2A GBL Silicon Bridge Rectifer |
Produkt ist nicht verfügbar |
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KBJ408G | GeneSiC Semiconductor |
Bridge Rectifiers 800V 4A Bridge Rectifier |
Produkt ist nicht verfügbar |
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GBP206 | GeneSiC Semiconductor |
Bridge Rectifiers 600V 2A GBP Silicon Bridge Rectifer |
Produkt ist nicht verfügbar |
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G3R30MT12J-TR | GeneSiC Semiconductor |
MOSFET 1200V 30mohm TO-263-7 G3R SiC MOSFET |
Produkt ist nicht verfügbar |
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G3R40MT12J-TR | GeneSiC Semiconductor |
MOSFET 1200V 40mohm TO-263-7 G3R SiC MOSFET |
Produkt ist nicht verfügbar |
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G3R75MT12J-TR | GeneSiC Semiconductor |
MOSFET 1200V 75mohm TO-263-7 G3R SiC MOSFET |
Produkt ist nicht verfügbar |
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G3R160MT12J-TR | GeneSiC Semiconductor |
MOSFET 1200V 160mohm TO-263-7 G3R SiC MOSFET |
Produkt ist nicht verfügbar |
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GBL204 | GeneSiC Semiconductor | Bridge Rectifiers 400V 2A GBL Silicon Bridge Rectifer |
Produkt ist nicht verfügbar |
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KBL604G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 6A Bridge Rectifier |
auf Bestellung 1887 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5827 | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 30V - 15A Schottky Rectifier |
Produkt ist nicht verfügbar |
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GBJ6M | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 6A GBJ Single Phase Bridge Rectifier |
Produkt ist nicht verfügbar |
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MBRH240200R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) |
Produkt ist nicht verfügbar |
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MBRH24030 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 30V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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MBRH24040 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 40V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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MBRH24080 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 80V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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MBRH24035R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 35V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) |
Produkt ist nicht verfügbar |
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MBRH24060R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 60V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) |
Produkt ist nicht verfügbar |
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MBRH24040R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 40V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) |
Produkt ist nicht verfügbar |
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MBRH24020R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 20V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) |
Produkt ist nicht verfügbar |
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MBRH24030R | GeneSiC Semiconductor |
Discrete Semiconductor Modules 30V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration) |
Produkt ist nicht verfügbar |
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MBRH24035 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 35V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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MBRH24020 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 20V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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MBRH240200 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 200V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration) |
Produkt ist nicht verfügbar |
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MBRF40080R | GeneSiC Semiconductor | Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB |
Produkt ist nicht verfügbar |
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MBRF40080 | GeneSiC Semiconductor | Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB |
Produkt ist nicht verfügbar |
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MSRTA40080(A) | GeneSiC Semiconductor | Discrete Semiconductor Modules 800V 400A Std. Recovery |
Produkt ist nicht verfügbar |
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GBPC2508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 25 A |
auf Bestellung 969 Stücke: Lieferzeit 10-14 Tag (e) |
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BR605 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 6A 50P/35R |
Produkt ist nicht verfügbar |
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BR66 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 600P/420R |
Produkt ist nicht verfügbar |
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1N5829 | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 20V - 25A Schottky Rectifier |
Produkt ist nicht verfügbar |
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BR1005 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 10A 50P/35 |
Produkt ist nicht verfügbar |
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G2R1000MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 53W Kind of package: tube Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G2R1000MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 54W Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 967 Stücke: Lieferzeit 7-14 Tag (e) |
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G2R1000MT33J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 3.3kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 74W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 21nC Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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G2R120MT33J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Drain-source voltage: 3.3kV On-state resistance: 0.12Ω Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: G2R™; SiC Kind of channel: enhanced Anzahl je Verpackung: 250 Stücke |
Produkt ist nicht verfügbar |
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G3R160MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 123W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 40A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 16A On-state resistance: 0.16Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 932 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R160MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 28nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| G3R160MT17D | GeneSiC SEMICONDUCTOR |
G3R160MT17D THT N channel transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R160MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W Mounting: SMD Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 48A Type of transistor: N-MOSFET On-state resistance: 0.16Ω Drain current: 15A Drain-source voltage: 1.7kV Case: TO263-7 Power dissipation: 187W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R20MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 542W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 219nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 240A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R20MT12N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 240A Power dissipation: 365W Case: SOT227B Gate-source voltage: -5...15V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R20MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 88A Pulsed drain current: 300A Power dissipation: 809W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 20mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| G3R20MT17N | GeneSiC SEMICONDUCTOR |
G3R20MT17N Transistor modules MOSFET |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R30MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R30MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 155nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 200A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R350MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Kind of package: tube Gate charge: 12nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 16A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 8A On-state resistance: 0.35Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 457 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R350MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 960 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R40MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1133 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R40MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R40MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 331 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R450MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| G3R450MT17J | GeneSiC SEMICONDUCTOR |
G3R450MT17J SMD N channel transistors |
auf Bestellung 859 Stücke: Lieferzeit 7-14 Tag (e) |
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| G3R45MT17D | GeneSiC SEMICONDUCTOR |
G3R45MT17D THT N channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| G3R45MT17K | GeneSiC SEMICONDUCTOR |
G3R45MT17K THT N channel transistors |
auf Bestellung 395 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R75MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 207W Polarisation: unipolar Kind of package: tube Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 80A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 281 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R75MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 207W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 80A Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 539 Stücke: Lieferzeit 7-14 Tag (e) |
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GAP3SLT33-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214 Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 3.3kV Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 1.15V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GB01SLT06-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 7A Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
| MBRH240150 |
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Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 150V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 150V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| GBL208 |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800V 2A GBL Silicon Bridge Rectifer
Bridge Rectifiers 800V 2A GBL Silicon Bridge Rectifer
Produkt ist nicht verfügbar
| KBJ408G |
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Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800V 4A Bridge Rectifier
Bridge Rectifiers 800V 4A Bridge Rectifier
Produkt ist nicht verfügbar
| GBP206 |
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Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600V 2A GBP Silicon Bridge Rectifer
Bridge Rectifiers 600V 2A GBP Silicon Bridge Rectifer
Produkt ist nicht verfügbar
| G3R30MT12J-TR |
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Hersteller: GeneSiC Semiconductor
MOSFET 1200V 30mohm TO-263-7 G3R SiC MOSFET
MOSFET 1200V 30mohm TO-263-7 G3R SiC MOSFET
Produkt ist nicht verfügbar
| G3R40MT12J-TR |
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Hersteller: GeneSiC Semiconductor
MOSFET 1200V 40mohm TO-263-7 G3R SiC MOSFET
MOSFET 1200V 40mohm TO-263-7 G3R SiC MOSFET
Produkt ist nicht verfügbar
| G3R75MT12J-TR |
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Hersteller: GeneSiC Semiconductor
MOSFET 1200V 75mohm TO-263-7 G3R SiC MOSFET
MOSFET 1200V 75mohm TO-263-7 G3R SiC MOSFET
Produkt ist nicht verfügbar
| G3R160MT12J-TR |
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Hersteller: GeneSiC Semiconductor
MOSFET 1200V 160mohm TO-263-7 G3R SiC MOSFET
MOSFET 1200V 160mohm TO-263-7 G3R SiC MOSFET
Produkt ist nicht verfügbar
| GBL204 |
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 2A GBL Silicon Bridge Rectifer
Bridge Rectifiers 400V 2A GBL Silicon Bridge Rectifer
Produkt ist nicht verfügbar
| KBL604G |
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Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 6A Bridge Rectifier
Bridge Rectifiers 400V 6A Bridge Rectifier
auf Bestellung 1887 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 2.02 EUR |
| 25+ | 1.76 EUR |
| 100+ | 1.43 EUR |
| 250+ | 1.24 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1 EUR |
| 1N5827 |
|
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 30V - 15A Schottky Rectifier
Schottky Diodes & Rectifiers 30V - 15A Schottky Rectifier
Produkt ist nicht verfügbar
| GBJ6M |
|
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 1000V 6A GBJ Single Phase Bridge Rectifier
Bridge Rectifiers 1000V 6A GBJ Single Phase Bridge Rectifier
Produkt ist nicht verfügbar
| MBRH240200R |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Discrete Semiconductor Modules 200V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Produkt ist nicht verfügbar
| MBRH24030 |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 30V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 30V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| MBRH24040 |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 40V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 40V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| MBRH24080 |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 80V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 80V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| MBRH24035R |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 35V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Discrete Semiconductor Modules 35V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Produkt ist nicht verfügbar
| MBRH24060R |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 60V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Discrete Semiconductor Modules 60V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Produkt ist nicht verfügbar
| MBRH24040R |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 40V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Discrete Semiconductor Modules 40V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Produkt ist nicht verfügbar
| MBRH24020R |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 20V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Discrete Semiconductor Modules 20V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Produkt ist nicht verfügbar
| MBRH24030R |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 30V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Discrete Semiconductor Modules 30V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Reverse Configuration)
Produkt ist nicht verfügbar
| MBRH24035 |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 35V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 35V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| MBRH24020 |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 20V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 20V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| MBRH240200 |
|
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 200V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Discrete Semiconductor Modules 200V 240A D-67 (HALF PAK) Silicon Rectifier Module - Schottky (Standard Configuration)
Produkt ist nicht verfügbar
| MBRF40080R |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB
Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB
Produkt ist nicht verfügbar
| MBRF40080 |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB
Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB
Produkt ist nicht verfügbar
| MSRTA40080(A) |
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules 800V 400A Std. Recovery
Discrete Semiconductor Modules 800V 400A Std. Recovery
Produkt ist nicht verfügbar
| GBPC2508W |
|
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 25 A
Bridge Rectifiers 800 V - 25 A
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.88 EUR |
| 10+ | 5.47 EUR |
| 25+ | 5 EUR |
| 100+ | 4.33 EUR |
| 250+ | 3.96 EUR |
| 500+ | 3.7 EUR |
| 1000+ | 3.59 EUR |
| BR605 |
|
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 6A 50P/35R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 6A 50P/35R
Produkt ist nicht verfügbar
| BR66 |
|
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 600P/420R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 600P/420R
Produkt ist nicht verfügbar
| 1N5829 |
|
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 20V - 25A Schottky Rectifier
Schottky Diodes & Rectifiers 20V - 25A Schottky Rectifier
Produkt ist nicht verfügbar
| BR1005 |
|
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 10A 50P/35
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 10A 50P/35
Produkt ist nicht verfügbar
| G2R1000MT17D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Kind of package: tube
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Kind of package: tube
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G2R1000MT17J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 967 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 7.97 EUR |
| 11+ | 6.85 EUR |
| 12+ | 6.48 EUR |
| 50+ | 6.22 EUR |
| G2R1000MT33J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 3.3kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 21nC
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 3.3kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 21nC
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| G2R120MT33J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Drain-source voltage: 3.3kV
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Anzahl je Verpackung: 250 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Drain-source voltage: 3.3kV
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Anzahl je Verpackung: 250 Stücke
Produkt ist nicht verfügbar
| G3R160MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 123W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 40A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 123W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 40A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 16A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 932 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 10.54 EUR |
| 10+ | 7.29 EUR |
| 11+ | 6.89 EUR |
| 600+ | 6.61 EUR |
| G3R160MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R160MT17D |
|
Hersteller: GeneSiC SEMICONDUCTOR
G3R160MT17D THT N channel transistors
G3R160MT17D THT N channel transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 20.52 EUR |
| 6+ | 12.68 EUR |
| G3R160MT17J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Drain current: 15A
Drain-source voltage: 1.7kV
Case: TO263-7
Power dissipation: 187W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Drain current: 15A
Drain-source voltage: 1.7kV
Case: TO263-7
Power dissipation: 187W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R20MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| G3R20MT12N |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 240A
Power dissipation: 365W
Case: SOT227B
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 240A
Power dissipation: 365W
Case: SOT227B
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R20MT17K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R20MT17N |
|
Hersteller: GeneSiC SEMICONDUCTOR
G3R20MT17N Transistor modules MOSFET
G3R20MT17N Transistor modules MOSFET
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 160.07 EUR |
| 10+ | 159.46 EUR |
| G3R30MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R30MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R350MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 12nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 12nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 457 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.26 EUR |
| 11+ | 6.55 EUR |
| 14+ | 5.25 EUR |
| 15+ | 4.96 EUR |
| G3R350MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.31 EUR |
| 13+ | 5.52 EUR |
| G3R40MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1133 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.33 EUR |
| 30+ | 18.08 EUR |
| 120+ | 17.56 EUR |
| G3R40MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R40MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 19.91 EUR |
| 600+ | 19.53 EUR |
| G3R450MT17D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R450MT17J |
|
Hersteller: GeneSiC SEMICONDUCTOR
G3R450MT17J SMD N channel transistors
G3R450MT17J SMD N channel transistors
auf Bestellung 859 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 11.54 EUR |
| 8+ | 9.48 EUR |
| 100+ | 9.17 EUR |
| G3R45MT17D |
|
Hersteller: GeneSiC SEMICONDUCTOR
G3R45MT17D THT N channel transistors
G3R45MT17D THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 40.28 EUR |
| G3R45MT17K |
|
Hersteller: GeneSiC SEMICONDUCTOR
G3R45MT17K THT N channel transistors
G3R45MT17K THT N channel transistors
auf Bestellung 395 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 37.64 EUR |
| 3+ | 35.58 EUR |
| 120+ | 35.55 EUR |
| G3R75MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 281 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.8 EUR |
| 6+ | 12.56 EUR |
| 7+ | 11.87 EUR |
| 30+ | 11.68 EUR |
| G3R75MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| G3R75MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 539 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.5 EUR |
| 6+ | 12.4 EUR |
| 7+ | 11.73 EUR |
| 120+ | 11.63 EUR |
| GAP3SLT33-214 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 1A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| GB01SLT06-214 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 7A
Anzahl je Verpackung: 15000 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 7A
Anzahl je Verpackung: 15000 Stücke
Produkt ist nicht verfügbar