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G3R20MT17N G3R20MT17N GeneSiC SEMICONDUCTOR G3R20MT17N.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Produkt ist nicht verfügbar
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G3R20MT17K G3R20MT17K GeneSiC SEMICONDUCTOR G3R20MT17K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Mounting: THT
Case: TO247-4
Gate-source voltage: -5...15V
Gate charge: 400nC
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Drain current: 88A
Technology: G3R™; SiC
Kind of channel: enhancement
Pulsed drain current: 300A
Power dissipation: 809W
Kind of package: tube
Drain-source voltage: 1.7kV
Polarisation: unipolar
Produkt ist nicht verfügbar
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G3R350MT12D G3R350MT12D GeneSiC SEMICONDUCTOR G3R350MT12D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-source voltage: -5...15V
Gate charge: 12nC
On-state resistance: 0.35Ω
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 74W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.82 EUR
16+4.72 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
GC2X8MPS12-247 GC2X8MPS12-247 GeneSiC SEMICONDUCTOR GC2X8MPS12-247.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 60A
Technology: SiC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.31 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GB20SLT12-247 GB20SLT12-247 GeneSiC SEMICONDUCTOR GB20SLT12-247.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Case: TO247-2
Produkt ist nicht verfügbar
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G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R20MT17K G3R20MT17K.pdf
G3R20MT17K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Mounting: THT
Case: TO247-4
Gate-source voltage: -5...15V
Gate charge: 400nC
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Drain current: 88A
Technology: G3R™; SiC
Kind of channel: enhancement
Pulsed drain current: 300A
Power dissipation: 809W
Kind of package: tube
Drain-source voltage: 1.7kV
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R350MT12D G3R350MT12D.pdf
G3R350MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-source voltage: -5...15V
Gate charge: 12nC
On-state resistance: 0.35Ω
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 74W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
16+4.72 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
GC2X8MPS12-247 GC2X8MPS12-247.pdf
GC2X8MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 60A
Technology: SiC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.31 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GB20SLT12-247 GB20SLT12-247.pdf
GB20SLT12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Case: TO247-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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