Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5633) > Seite 94 nach 94
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G3R20MT12K | GeneSiC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 542W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 219nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 240A Case: TO247-4 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R30MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 155nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 200A Case: TO247-4 |
Produkt ist nicht verfügbar |
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G3R40MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-4 |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 207W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 80A Case: TO247-4 |
auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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GB20SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A |
Produkt ist nicht verfügbar |
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GC02MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube Mounting: THT Load current: 2A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Max. forward impulse current: 16A Max. forward voltage: 1.5V Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 1.2kV |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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GC15MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 120A Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO220-2 |
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GC08MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube Mounting: THT Load current: 8A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Max. forward impulse current: 60A Max. forward voltage: 1.5V Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
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GC10MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube Mounting: THT Load current: 10A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Max. forward impulse current: 80A Max. forward voltage: 1.5V Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
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GC20MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Mounting: THT Load current: 20A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: Schottky rectifying Max. forward impulse current: 160A Max. forward voltage: 1.5V Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
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GD10MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 16A Case: TO220-2 Mounting: THT Kind of package: tube Max. forward impulse current: 64A Semiconductor structure: single diode Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.9V Technology: SiC |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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GD20MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Max. load current: 67A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 128A Max. forward voltage: 1.9V |
Produkt ist nicht verfügbar |
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GB05MPS33-263 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube Case: TO263-7 Mounting: SMD Kind of package: tube Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 3.3kV Load current: 5A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 2.4V |
Produkt ist nicht verfügbar |
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GB01SLT06-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 7A |
Produkt ist nicht verfügbar |
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GAP3SLT33-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214 Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 3.3kV Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 1.15V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 1A |
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GB01SLT12-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 8A |
Produkt ist nicht verfügbar |
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GB02SLT12-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: DO214 Kind of package: reel; tape Max. forward impulse current: 16A |
Produkt ist nicht verfügbar |
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GD2X100MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 108A x2 Case: SOT227B Max. forward voltage: 1.8V Max. forward impulse current: 440A Electrical mounting: screw Max. load current: 231A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R40MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ |
auf Bestellung 1133 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 207W Polarisation: unipolar Kind of package: tube Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 80A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R120MT33J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7 Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: G2R™; SiC Kind of channel: enhanced Mounting: SMD Case: TO263-7 Drain-source voltage: 3.3kV On-state resistance: 0.12Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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G3R160MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W Mounting: SMD Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 48A Type of transistor: N-MOSFET On-state resistance: 0.16Ω Drain current: 15A Drain-source voltage: 1.7kV Case: TO263-7 Power dissipation: 187W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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G3R350MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W Mounting: THT Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Kind of package: tube Gate charge: 12nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 16A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 8A On-state resistance: 0.35Ω |
auf Bestellung 457 Stücke: Lieferzeit 14-21 Tag (e) |
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GC2X20MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Max. off-state voltage: 1.2kV Case: TO247-3 Max. forward impulse current: 160A Mounting: THT Features of semiconductor devices: MPS Technology: SiC Semiconductor structure: common cathode; double Load current: 20A x2 Max. forward voltage: 1.5V Max. load current: 40A |
Produkt ist nicht verfügbar |
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G2R1000MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 53W Kind of package: tube Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V |
Produkt ist nicht verfügbar |
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G2R1000MT17J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 54W Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V |
auf Bestellung 967 Stücke: Lieferzeit 14-21 Tag (e) |
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G2R1000MT33J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7 Mounting: SMD Case: TO263-7 Polarisation: unipolar Pulsed drain current: 8A Drain-source voltage: 3.3kV Drain current: 4A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 74W Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 21nC Technology: G2R™; SiC Kind of channel: enhanced Gate-source voltage: -5...20V |
Produkt ist nicht verfügbar |
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G3R20MT12N | GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 74A Pulsed drain current: 240A Power dissipation: 365W Case: SOT227B Gate-source voltage: -5...15V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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GD30MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 33A Max. load current: 86A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 168A Max. forward voltage: 1.8V |
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GE04MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 7A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 7A Max. load current: 11A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 22A Max. forward voltage: 1.75V |
Produkt ist nicht verfügbar |
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GE06MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 27A Max. forward voltage: 1.25V |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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GE08MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 36A Max. forward voltage: 1.25V |
Produkt ist nicht verfügbar |
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GE10MPS06A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 44A Max. forward voltage: 1.25V |
Produkt ist nicht verfügbar |
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GB50SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO247-2 Kind of package: tube Max. forward impulse current: 0.4kA |
Produkt ist nicht verfügbar |
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G3R350MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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GB01SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A |
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GB02SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 16A |
Produkt ist nicht verfügbar |
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GC2X10MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: MPS Case: TO247-3 Kind of package: tube Max. forward impulse current: 80A Max. forward voltage: 1.5V |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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GC2X5MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Features of semiconductor devices: MPS Case: TO247-3 Kind of package: tube Max. forward impulse current: 40A Max. forward voltage: 1.5V |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R450MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
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G3R160MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 28nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R30MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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G3R40MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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G3R75MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| GD2X30MPS06D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube Mounting: THT Max. off-state voltage: 650V Max. load current: 88A Max. forward voltage: 1.8V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 168A Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 |
Produkt ist nicht verfügbar |
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GD2X30MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 650V Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 168A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X30MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 1.2kV Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 240A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B |
Produkt ist nicht verfügbar |
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GB10MPS17-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 87A |
Produkt ist nicht verfügbar |
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G3R20MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 88A Pulsed drain current: 300A Power dissipation: 809W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 20mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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GB2X100MPS12-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
Produkt ist nicht verfügbar |
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GC2X100MPS06-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 640A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
Produkt ist nicht verfügbar |
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| GD2X100MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.9V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 420A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns |
Produkt ist nicht verfügbar |
| G3R20MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 542W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 219nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 240A
Case: TO247-4
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| G3R30MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
Produkt ist nicht verfügbar
| G3R40MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 19.91 EUR |
| G3R75MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.5 EUR |
| 6+ | 12.4 EUR |
| 7+ | 11.73 EUR |
| 120+ | 11.63 EUR |
| GB20SLT12-247 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Produkt ist nicht verfügbar
| GC02MPS12-220 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Load current: 2A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 16A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Load current: 2A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 16A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 3.98 EUR |
| GC15MPS12-220 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO220-2
Produkt ist nicht verfügbar
| GC08MPS12-220 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 60A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 60A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
| GC10MPS12-220 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 80A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 80A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
| GC20MPS12-220 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 160A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 160A
Max. forward voltage: 1.5V
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
| GD10MPS12A |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO220-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO220-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Technology: SiC
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.69 EUR |
| 18+ | 4.05 EUR |
| 19+ | 3.82 EUR |
| GD20MPS12A |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Max. load current: 67A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 128A
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Max. load current: 67A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 128A
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
| GB05MPS33-263 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 3.3kV
Load current: 5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 2.4V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 3.3kV
Load current: 5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 2.4V
Produkt ist nicht verfügbar
| GB01SLT06-214 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 7A
Produkt ist nicht verfügbar
| GAP3SLT33-214 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1.15V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
| GB01SLT12-214 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
| GB02SLT12-214 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: DO214
Kind of package: reel; tape
Max. forward impulse current: 16A
Produkt ist nicht verfügbar
| GD2X100MPS06N |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 440A
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 440A
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 59.79 EUR |
| 3+ | 58.87 EUR |
| 10+ | 57.97 EUR |
| 25+ | 57.5 EUR |
| G3R40MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
auf Bestellung 1133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.36 EUR |
| 30+ | 18.18 EUR |
| 120+ | 17.65 EUR |
| G3R75MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.89 EUR |
| 6+ | 12.6 EUR |
| 7+ | 11.91 EUR |
| 30+ | 11.74 EUR |
| G2R120MT33J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Mounting: SMD
Case: TO263-7
Drain-source voltage: 3.3kV
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; TO263-7
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Mounting: SMD
Case: TO263-7
Drain-source voltage: 3.3kV
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| G3R160MT17J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Drain current: 15A
Drain-source voltage: 1.7kV
Case: TO263-7
Power dissipation: 187W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 187W
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 48A
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Drain current: 15A
Drain-source voltage: 1.7kV
Case: TO263-7
Power dissipation: 187W
Polarisation: unipolar
Produkt ist nicht verfügbar
| G3R350MT12D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 12nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Kind of package: tube
Gate charge: 12nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.31 EUR |
| 11+ | 6.58 EUR |
| 14+ | 5.26 EUR |
| 15+ | 4.98 EUR |
| GC2X20MPS12-247 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 1.2kV
Case: TO247-3
Max. forward impulse current: 160A
Mounting: THT
Features of semiconductor devices: MPS
Technology: SiC
Semiconductor structure: common cathode; double
Load current: 20A x2
Max. forward voltage: 1.5V
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 1.2kV
Case: TO247-3
Max. forward impulse current: 160A
Mounting: THT
Features of semiconductor devices: MPS
Technology: SiC
Semiconductor structure: common cathode; double
Load current: 20A x2
Max. forward voltage: 1.5V
Max. load current: 40A
Produkt ist nicht verfügbar
| G2R1000MT17D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Kind of package: tube
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Kind of package: tube
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
| G2R1000MT17J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.01 EUR |
| 11+ | 6.52 EUR |
| 50+ | 6.23 EUR |
| G2R1000MT33J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 3.3kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 21nC
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Mounting: SMD
Case: TO263-7
Polarisation: unipolar
Pulsed drain current: 8A
Drain-source voltage: 3.3kV
Drain current: 4A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 74W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 21nC
Technology: G2R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
| G3R20MT12N |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 240A
Power dissipation: 365W
Case: SOT227B
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 74A
Pulsed drain current: 240A
Power dissipation: 365W
Case: SOT227B
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| GD30MPS06A |
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 33A
Max. load current: 86A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 168A
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 33A
Max. load current: 86A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 168A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
| GE04MPS06A |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 7A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 7A
Max. load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 22A
Max. forward voltage: 1.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 7A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 7A
Max. load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 22A
Max. forward voltage: 1.75V
Produkt ist nicht verfügbar
| GE06MPS06A |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 27A
Max. forward voltage: 1.25V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 27A
Max. forward voltage: 1.25V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.1 EUR |
| GE08MPS06A |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.25V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 36A
Max. forward voltage: 1.25V
Produkt ist nicht verfügbar
| GE10MPS06A |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 44A
Max. forward voltage: 1.25V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 44A
Max. forward voltage: 1.25V
Produkt ist nicht verfügbar
| GB50SLT12-247 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
Produkt ist nicht verfügbar
| G3R350MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.31 EUR |
| 13+ | 5.52 EUR |
| GB01SLT12-252 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
| GB02SLT12-252 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
Produkt ist nicht verfügbar
| GC2X10MPS12-247 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 1.5V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 80A
Max. forward voltage: 1.5V
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 14.9 EUR |
| 8+ | 9.24 EUR |
| GC2X5MPS12-247 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.5V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.5V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.01 EUR |
| 13+ | 5.61 EUR |
| G3R450MT17D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| G3R160MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| G3R30MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| G3R40MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| G3R75MT12J |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| GD2X30MPS06D |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Produkt ist nicht verfügbar
| GD2X30MPS06N |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 27.41 EUR |
| GD2X30MPS12N |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 240A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 240A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
Produkt ist nicht verfügbar
| GB10MPS17-247 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
Produkt ist nicht verfügbar
| G3R20MT17K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 88A
Pulsed drain current: 300A
Power dissipation: 809W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| GB2X100MPS12-227 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
| GC2X100MPS06-227 |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
| GD2X100MPS12N |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar