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GC2X8MPS12-247 GC2X8MPS12-247 GeneSiC SEMICONDUCTOR GC2X8MPS12-247.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 60A
Technology: SiC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.31 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GB20SLT12-247 GB20SLT12-247 GeneSiC SEMICONDUCTOR GB20SLT12-247.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Case: TO247-2
Produkt ist nicht verfügbar
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GC02MPS12-220 GC02MPS12-220 GeneSiC SEMICONDUCTOR GC02MPS12-220.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 2A
Max. forward impulse current: 16A
Max. off-state voltage: 1.2kV
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GC10MPS12-220 GC10MPS12-220 GeneSiC SEMICONDUCTOR GC10MPS12-220.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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GC08MPS12-220 GC08MPS12-220 GeneSiC SEMICONDUCTOR GC08MPS12-220.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20MPS12-220 GC20MPS12-220 GeneSiC SEMICONDUCTOR GC20MPS12-220.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17D G3R450MT17D GeneSiC SEMICONDUCTOR G3R450MT17D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.7kV
Gate-source voltage: -5...15V
Drain current: 6A
Gate charge: 18nC
On-state resistance: 0.45Ω
Power dissipation: 88W
Pulsed drain current: 16A
Technology: G3R™; SiC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.35 EUR
13+5.95 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17J G3R450MT17J GeneSiC SEMICONDUCTOR G3R450MT17J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Case: TO263-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.7kV
Gate-source voltage: -5...15V
Drain current: 6A
Gate charge: 18nC
On-state resistance: 0.45Ω
Power dissipation: 91W
Pulsed drain current: 16A
Technology: G3R™; SiC
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.79 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
GC2X8MPS12-247 GC2X8MPS12-247.pdf
GC2X8MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 60A
Technology: SiC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.31 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GB20SLT12-247 GB20SLT12-247.pdf
GB20SLT12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Case: TO247-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC02MPS12-220 GC02MPS12-220.pdf
GC02MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 2A
Max. forward impulse current: 16A
Max. off-state voltage: 1.2kV
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GC10MPS12-220 GC10MPS12-220.pdf
GC10MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC08MPS12-220 GC08MPS12-220.pdf
GC08MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20MPS12-220 GC20MPS12-220.pdf
GC20MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17D G3R450MT17D.pdf
G3R450MT17D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.7kV
Gate-source voltage: -5...15V
Drain current: 6A
Gate charge: 18nC
On-state resistance: 0.45Ω
Power dissipation: 88W
Pulsed drain current: 16A
Technology: G3R™; SiC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.35 EUR
13+5.95 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17J G3R450MT17J.pdf
G3R450MT17J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Case: TO263-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.7kV
Gate-source voltage: -5...15V
Drain current: 6A
Gate charge: 18nC
On-state resistance: 0.45Ω
Power dissipation: 91W
Pulsed drain current: 16A
Technology: G3R™; SiC
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.79 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 9 18 27 36 45 54 63 72 81 88 89 90 91 92 93