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CY7C1320KV18-250BZI CY7C1320KV18-250BZI Infineon Technologies Infineon-CY7C1318KV18_CY7C1320KV18_18-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd213a2f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1414KV18-300BZC CY7C1414KV18-300BZC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1414KV18-300BZXI CY7C1414KV18-300BZXI Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
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CY7C1415KV18-250BZI CY7C1415KV18-250BZI Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1420KV18-333BZI CY7C1420KV18-333BZI Infineon Technologies Infineon-CY7C1418KV18_CY7C1420KV18_36-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1b25e368a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1423KV18-250BZC CY7C1423KV18-250BZC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1423KV18-250BZXC CY7C1423KV18-250BZXC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1423KV18-300BZC CY7C1423KV18-300BZC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1426KV18-250BZC CY7C1426KV18-250BZC Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
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CY7C1568KV18-550BZXC CY7C1568KV18-550BZXC Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1570KV18-550BZXC CY7C1570KV18-550BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
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CY7C25682KV18-500BZC CY7C25682KV18-500BZC Infineon Technologies Infineon-CY7C25682KV18_CY7C25702KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde66630e8&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 72MBIT PARALLEL 165FBGA
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CY8C21234B-24SXI CY8C21234B-24SXI Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 12
DigiKey Programmable: Not Verified
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CY8C21434B-24LTXI CY8C21434B-24LTXI Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C21534B-24PVXI CY8C21534B-24PVXI Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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CY8C21634B-24LTXI CY8C21634B-24LTXI Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
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BGA728L7E6327XTSA1 BGA728L7E6327XTSA1 Infineon Technologies BGA%20728L7.pdf Description: IC AMP GP 170MHZ-1.675GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 170MHz ~ 1.675GHz
RF Type: General Purpose
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.75dB
Current - Supply: 5.85mA
Noise Figure: 1.3dB
P1dB: -10dBm
Test Frequency: 470MHz
Supplier Device Package: PG-TSLP-7-1
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RRN7740 Infineon Technologies Description: RF TRANSMITTER
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RTN7730X1SA1 Infineon Technologies Description: RF TXRX MODULE
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PTFA070601FV4R250XTMA1 PTFA070601FV4R250XTMA1 Infineon Technologies PTFA070601E,F.pdf Description: FET RF LDMOS 60W H37265-3
Gain: 19.5dB
Power - Output: 60W
Frequency: 760MHz
Mounting Type: Surface Mount
Package / Case: 2-Flatpack, Fin Leads, Flanged
Packaging: Tape & Reel (TR)
Current - Test: 600 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: H-37265-2
Technology: LDMOS
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PTFA071701FV4R250XTMA1 PTFA071701FV4R250XTMA1 Infineon Technologies ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d Description: FET RF LDMOS 170W H37248-2
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PTFB191501FV1R250XTMA1 PTFB191501FV1R250XTMA1 Infineon Technologies PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f Description: FET RF LDMOS 150W H37248-2
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PTFB211501FV1R250XTMA1 PTFB211501FV1R250XTMA1 Infineon Technologies Description: FET FR LDMOS 150W H37248-2
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PX3516ADDGR4XTMA1 PX3516ADDGR4XTMA1 Infineon Technologies PX3516.pdf Description: IC GATE DRVR HALF-BRDG TDSON10-2
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: PG-TDSON-10-2
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 6V
Operating Temperature: -25°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 1.3V, 1.9V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
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TDA21220AUMA1 TDA21220AUMA1 Infineon Technologies TDA21220_DrMOS_V1.0_DS_Rev1.9.pdf?folderId=db3a3043240e85fe0124160b44183655&fileId=db3a304328c6bd5c0128d3df67f200b0 Description: MOSFET DRIVER 40IQFN
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ILD1151XUMA1 ILD1151XUMA1 Infineon Technologies ILD1151.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304330046413013031216f2b20e1 Description: IC LED DRIVER CTRLR PWM 14SSOP
Voltage - Supply (Max): 45V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-SSOP-14-EP
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TJ)
Type: DC DC Controller
Frequency: 100kHz ~ 500kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BCR401RE6433HTMA1 BCR401RE6433HTMA1 Infineon Technologies Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b Description: IC LED DRVR LIN 60MA SOT143R-3D
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT-143R-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Operating Temperature: 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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BCR402RE6433HTMA1 BCR402RE6433HTMA1 Infineon Technologies bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189 Description: IC LED DRVR LIN 60MA SOT143R-3D
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT-143R-3D
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BCV61BE6433HTMA1 BCV61BE6433HTMA1 Infineon Technologies bcv61.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449d8ff720246 Description: TRANSISTOR NPN DOUBLE 45V SOT143
Part Status: Not For New Designs
Supplier Device Package: PG-SOT-143-3D
Applications: Current Mirror
Transistor Type: 2 NPN, Base Collector Junction
Mounting Type: Surface Mount
Current Rating (Amps): 100mA
Package / Case: TO-253-4, TO-253AA
Voltage - Rated: 30V
Packaging: Tape & Reel (TR)
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BFP 405 H6433 BFP 405 H6433 Infineon Technologies BFP405_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Part Status: Obsolete
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 23dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BSC0901NSI BSC0901NSI Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A 8TDSON
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BSC0904NSIATMA1 BSC0904NSIATMA1 Infineon Technologies BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef Description: MOSFET N-CH 30V 20A/78A TDSON
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
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BSC0906NSATMA1 BSC0906NSATMA1 Infineon Technologies BSC0906NS_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f0130986c816b2f8c Description: MOSFET N-CH 30V 18A/63A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 Infineon Technologies BSC109N10NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b897500128247bdae36f3f Description: MOSFET N-CH 100V 63A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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BSC22DN20NS3 G BSC22DN20NS3 G Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A 8TDSON
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BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 Infineon Technologies BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
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BSF030NE2LQ BSF030NE2LQ Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A WDSON-2
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BSF077N06NT3GXUMA1 BSF077N06NT3GXUMA1 Infineon Technologies BSF077N06NT3_G.pdf Description: MOSFET N-CH 60V 13A WDSON-2
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BSO080P03SHXUMA1 BSO080P03SHXUMA1 Infineon Technologies BSO080P03S_Rev1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b3af1f250a4b Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Produkt ist nicht verfügbar
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BSO130P03SHXUMA1 BSO130P03SHXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Produkt ist nicht verfügbar
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BSO203PHXUMA1 BSO203PHXUMA1 Infineon Technologies BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11 Description: MOSFET 2P-CH 20V 7A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO203SPHXUMA1 BSO203SPHXUMA1 Infineon Technologies BSO203SP_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b483bb050b22 Description: MOSFET P-CH 20V 7A 8DSO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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BSZ018NE2LS BSZ018NE2LS Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A TSDSON-8
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BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 Infineon Technologies BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2 Description: MOSFET N-CH 25V 22A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 25V 16A/40A TSDSON
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Infineon Technologies BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
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BSZ065N03LSATMA1 BSZ065N03LSATMA1 Infineon Technologies BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
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BSZ0902NSATMA1 BSZ0902NSATMA1 Infineon Technologies BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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BSZ0909NSATMA1 BSZ0909NSATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 34V 9A/36A 8TSDSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
FET Type: N-Channel
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BSZ240N12NS3GATMA1 BSZ240N12NS3GATMA1 Infineon Technologies BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038 Description: MOSFET N-CH 120V 37A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
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BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b Description: MOSFET N-CH 250V 5A TSDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-2
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BTM7742GXUMA1 BTM7742GXUMA1 Infineon Technologies BTM7742G.pdf Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC
Voltage - Load: 5.5V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 5.5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM7745GXUMA1 BTM7745GXUMA1 Infineon Technologies Transportation_Br.pdf Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Motor Type - AC, DC: Brushed DC
Voltage - Load: 5.5V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 5.5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM7752GXUMA1 BTM7752GXUMA1 Infineon Technologies Infineon-BTM7752G-DS-v02_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30432e1525b3012e24c6ed042357&ack=t Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-DSO-36
Voltage - Load: 5.5V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 5.5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM7755GXUMA1 BTM7755GXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOTOR DRIVER 8V-18V 36DSO
Motor Type - AC, DC: Brushed DC
Voltage - Load: 8V ~ 18V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS3028SDRATMA1 BTS3028SDRATMA1 Infineon Technologies Infineon-BTS3028SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad822a204c25 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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BTS3046SDLATMA1 BTS3046SDLATMA1 Infineon Technologies Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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BTS3046SDRATMA1 BTS3046SDRATMA1 Infineon Technologies Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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BTS3104SDLATMA1 BTS3104SDLATMA1 Infineon Technologies Infineon-BTS3104SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fde434bfb Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 104mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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CY7C1320KV18-250BZI Infineon-CY7C1318KV18_CY7C1320KV18_18-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd213a2f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1320KV18-250BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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1+84.87 EUR
10+79.81 EUR
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CY7C1414KV18-300BZC download
CY7C1414KV18-300BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1414KV18-300BZXI download
CY7C1414KV18-300BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
Produkt ist nicht verfügbar
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CY7C1415KV18-250BZI Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1415KV18-250BZI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1420KV18-333BZI Infineon-CY7C1418KV18_CY7C1420KV18_36-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1b25e368a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1420KV18-333BZI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1423KV18-250BZC download
CY7C1423KV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1423KV18-250BZXC download
CY7C1423KV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1423KV18-300BZC download
CY7C1423KV18-300BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
Produkt ist nicht verfügbar
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CY7C1426KV18-250BZC Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1426KV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1568KV18-550BZXC CY7C1568%2C70KV18.pdf
CY7C1568KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1570KV18-550BZXC download
CY7C1570KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
Produkt ist nicht verfügbar
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CY7C25682KV18-500BZC Infineon-CY7C25682KV18_CY7C25702KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde66630e8&utm_source=cypress&utm_medium=referral&ut
CY7C25682KV18-500BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Produkt ist nicht verfügbar
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CY8C21234B-24SXI download
CY8C21234B-24SXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 12
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21434B-24LTXI download
CY8C21434B-24LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 28
DigiKey Programmable: Not Verified
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3+10.28 EUR
10+7.9 EUR
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100+6.66 EUR
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CY8C21534B-24PVXI download
CY8C21534B-24PVXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY8C21634B-24LTXI download
CY8C21634B-24LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Produkt ist nicht verfügbar
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BGA728L7E6327XTSA1 BGA%20728L7.pdf
BGA728L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GP 170MHZ-1.675GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 170MHz ~ 1.675GHz
RF Type: General Purpose
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.75dB
Current - Supply: 5.85mA
Noise Figure: 1.3dB
P1dB: -10dBm
Test Frequency: 470MHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
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RRN7740
Hersteller: Infineon Technologies
Description: RF TRANSMITTER
Produkt ist nicht verfügbar
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RTN7730X1SA1
Hersteller: Infineon Technologies
Description: RF TXRX MODULE
Produkt ist nicht verfügbar
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PTFA070601FV4R250XTMA1 PTFA070601E,F.pdf
PTFA070601FV4R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 60W H37265-3
Gain: 19.5dB
Power - Output: 60W
Frequency: 760MHz
Mounting Type: Surface Mount
Package / Case: 2-Flatpack, Fin Leads, Flanged
Packaging: Tape & Reel (TR)
Current - Test: 600 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: H-37265-2
Technology: LDMOS
Produkt ist nicht verfügbar
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PTFA071701FV4R250XTMA1 ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d
PTFA071701FV4R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 170W H37248-2
Produkt ist nicht verfügbar
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PTFB191501FV1R250XTMA1 PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f
PTFB191501FV1R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 150W H37248-2
Produkt ist nicht verfügbar
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PTFB211501FV1R250XTMA1
PTFB211501FV1R250XTMA1
Hersteller: Infineon Technologies
Description: FET FR LDMOS 150W H37248-2
Produkt ist nicht verfügbar
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PX3516ADDGR4XTMA1 PX3516.pdf
PX3516ADDGR4XTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRDG TDSON10-2
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: PG-TDSON-10-2
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 6V
Operating Temperature: -25°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 1.3V, 1.9V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Produkt ist nicht verfügbar
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TDA21220AUMA1 TDA21220_DrMOS_V1.0_DS_Rev1.9.pdf?folderId=db3a3043240e85fe0124160b44183655&fileId=db3a304328c6bd5c0128d3df67f200b0
TDA21220AUMA1
Hersteller: Infineon Technologies
Description: MOSFET DRIVER 40IQFN
Produkt ist nicht verfügbar
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ILD1151XUMA1 ILD1151.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304330046413013031216f2b20e1
ILD1151XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 14SSOP
Voltage - Supply (Max): 45V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-SSOP-14-EP
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TJ)
Type: DC DC Controller
Frequency: 100kHz ~ 500kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR401RE6433HTMA1 Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b
BCR401RE6433HTMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-3D
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT-143R-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Operating Temperature: 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR402RE6433HTMA1 bcr402r.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407bc2b0a0189
BCR402RE6433HTMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-3D
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT-143R-3D
Produkt ist nicht verfügbar
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BCV61BE6433HTMA1 bcv61.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449d8ff720246
BCV61BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANSISTOR NPN DOUBLE 45V SOT143
Part Status: Not For New Designs
Supplier Device Package: PG-SOT-143-3D
Applications: Current Mirror
Transistor Type: 2 NPN, Base Collector Junction
Mounting Type: Surface Mount
Current Rating (Amps): 100mA
Package / Case: TO-253-4, TO-253AA
Voltage - Rated: 30V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BFP 405 H6433 BFP405_Rev2013.pdf
BFP 405 H6433
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Part Status: Obsolete
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 23dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC0901NSI BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSI
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A 8TDSON
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 5000 Stücke
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BSC0904NSIATMA1 BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef
BSC0904NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.44 EUR
Mindestbestellmenge: 5000 Stücke
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BSC0906NSATMA1 BSC0906NS_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f0130986c816b2f8c
BSC0906NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.48 EUR
Mindestbestellmenge: 5000 Stücke
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BSC109N10NS3GATMA1 BSC109N10NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b897500128247bdae36f3f
BSC109N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 63A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.21 EUR
15000+1.15 EUR
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BSC22DN20NS3 G BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
BSC22DN20NS3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TDSON
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 5000 Stücke
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BSC360N15NS3GATMA1 BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c
BSC360N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.19 EUR
15000+1.13 EUR
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BSF030NE2LQ BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQ
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A WDSON-2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 5000 Stücke
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BSF077N06NT3GXUMA1 BSF077N06NT3_G.pdf
BSF077N06NT3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A WDSON-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSO080P03SHXUMA1 BSO080P03S_Rev1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b3af1f250a4b
BSO080P03SHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Produkt ist nicht verfügbar
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BSO130P03SHXUMA1 fundamentals-of-power-semiconductors
BSO130P03SHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Produkt ist nicht verfügbar
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BSO203PHXUMA1 BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11
BSO203PHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO203SPHXUMA1 BSO203SP_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b483bb050b22
BSO203SPHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 7A 8DSO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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BSZ018NE2LS BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 23A TSDSON-8
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 5000 Stücke
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BSZ018NE2LSIATMA1 BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2
BSZ018NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 22A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.15 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ019N03LSATMA1 BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e
BSZ019N03LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.19 EUR
10000+1.12 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ036NE2LSATMA1 fundamentals-of-power-semiconductors
BSZ036NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 16A/40A TSDSON
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.58 EUR
10000+0.55 EUR
15000+0.52 EUR
25000+0.5 EUR
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BSZ060NE2LSATMA1 BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f
BSZ060NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
auf Bestellung 54500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.52 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ065N03LSATMA1 BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834
BSZ065N03LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.48 EUR
10000+0.44 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ0902NSATMA1 BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f
BSZ0902NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.83 EUR
10000+0.77 EUR
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BSZ0909NSATMA1 fundamentals-of-power-semiconductors
BSZ0909NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 9A/36A 8TSDSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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BSZ240N12NS3GATMA1 BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038
BSZ240N12NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 37A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
Produkt ist nicht verfügbar
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BSZ42DN25NS3GATMA1 BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b
BSZ42DN25NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-2
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BTM7742GXUMA1 BTM7742G.pdf
BTM7742GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC
Voltage - Load: 5.5V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 5.5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM7745GXUMA1 Transportation_Br.pdf
BTM7745GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Motor Type - AC, DC: Brushed DC
Voltage - Load: 5.5V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 5.5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM7752GXUMA1 Infineon-BTM7752G-DS-v02_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30432e1525b3012e24c6ed042357&ack=t
BTM7752GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 36DSO
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-DSO-36
Voltage - Load: 5.5V ~ 28V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 5.5V ~ 28V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM7755GXUMA1 fundamentals-of-power-semiconductors
BTM7755GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 36DSO
Motor Type - AC, DC: Brushed DC
Voltage - Load: 8V ~ 18V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 12A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS3028SDRATMA1 Infineon-BTS3028SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad822a204c25
BTS3028SDRATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 7500 Stücke:
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2500+2.57 EUR
5000+2.52 EUR
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BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
BTS3046SDLATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.12 EUR
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BTS3046SDRATMA1 Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d
BTS3046SDRATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.08 EUR
5000+2.03 EUR
7500+2.01 EUR
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BTS3104SDLATMA1 Infineon-BTS3104SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fde434bfb
BTS3104SDLATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 104mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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