Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124671) > Seite 2040 nach 2078
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IR2156STRPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Output current: 0.4A Number of channels: 2 Mounting: SMD Operating temperature: -25...125°C Application: for controller Frequency: 36...44kHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF3805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 130W Gate charge: 0.19µC Polarisation: unipolar Technology: HEXFET® Drain current: 220A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3805STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 210A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IRF3709ZSTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 87A Power dissipation: 79W Case: D2PAK; TO263 On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 17nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Version: ESD |
auf Bestellung 2458 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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IPS80R900P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of channel: enhancement Version: ESD |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB4030PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB8314PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 664A |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2008SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Kind of package: tube Turn-off time: 180ns Turn-on time: 750ns Power: 625mW Voltage class: 200V Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Output current: -600...290mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRS2005STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Kind of package: reel; tape Turn-off time: 150ns Turn-on time: 160ns Power: 625mW Voltage class: 200V Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Output current: -600...290mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRS2003STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Topology: MOSFET half-bridge Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -600...290mA Turn-off time: 180ns Turn-on time: 750ns Power: 625mW Supply voltage: 10...20V DC Voltage class: 200V Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Case: SO8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRS2007SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IRS2001STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: SOIC8 Input voltage: 10...20V Kind of integrated circuit: high-side; low-side Operating temperature: -40...125°C Output current: 0.13A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IRS2011STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V Type of integrated circuit: driver Case: SOIC8 Mounting: SMD Kind of integrated circuit: high-side; low-side Number of channels: 2 Input voltage: 10...20V Output current: 1A Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IRS2004STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: SOIC8 Input voltage: 10...20V Kind of integrated circuit: high-side; low-side Integrated circuit features: MOSFET Operating temperature: -40...125°C Output current: 0.13A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IRS2093MTRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 4 Amplifier class: D Case: MLPQ48 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IRS2005MTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: VFQFN14 Turn-on time: 160ns Power dissipation: 2.1W Voltage class: 200V Kind of integrated circuit: half-bridge Topology: H-bridge Integrated circuit features: MOSFET Operating temperature: -40...150°C Output current: 0.6A Pulse fall time: 30ns Impulse rise time: 70ns |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE2PCS05GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Operating voltage: 11...25V DC Topology: boost Mounting: SMD Input voltage: 85...265V Output current: -1.5...2A Operating temperature: -40...125°C Duty cycle factor: 0...98.5% Application: SMPS Case: PG-DSO-8 Kind of integrated circuit: PFC controller Frequency: 20...250kHz |
auf Bestellung 2221 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE2PCS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Output current: -1.5...2A Frequency: 50...250kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...125°C Topology: boost Input voltage: 80...265V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ICE2A180ZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77% Type of integrated circuit: PMIC Operating voltage: 8.5...21V DC Topology: flyback Mounting: THT Breakdown voltage: 800V Input voltage: 80...265V Output current: 4.1A Operating temperature: -25...130°C Duty cycle factor: 0...77% Application: SMPS Power: 29/17W Case: DIP7 Kind of integrated circuit: PWM controller Number of channels: 1 Frequency: 0.1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Mounting: SMD Protection: undervoltage UVP Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 0.6/1.2kV Kind of package: reel; tape Topology: single transistor Supply voltage: 0...28V; 4.5...5.5V |
auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1ED020I12FA2XUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-20 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 1ED020I12FXUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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2ED020I12-FI | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-18 Output current: -2...1A Number of channels: 2 Mounting: SMD Protection: undervoltage UVP Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Topology: IGBT half-bridge Supply voltage: 0...5V; 14...18V |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: half-bridge Case: PG-DSO-36 Output current: 2A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Voltage class: 1.2kV Pulse fall time: 50ns Turn-on time: 170ns Impulse rise time: 30ns Operating temperature: -40...150°C Maximum output current: 2A Power dissipation: 1W |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: -2.9A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: PG-SOT223 On-state resistance: 0.13Ω |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD060N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 56W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2002 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4227PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC Type of transistor: N-MOSFET On-state resistance: 25mΩ Mounting: THT Power dissipation: 330W Gate charge: 70nC Polarisation: unipolar Technology: HEXFET® Drain current: 65A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±30V Kind of package: tube Case: TO247AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7490TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8 Mounting: SMD Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IGCM15F60GA | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: PG-MDIP24 Output current: -15...15A Mounting: THT Operating temperature: -40...125°C Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...18.5/0...400V DC Topology: IGBT three-phase bridge; thermistor Protection: anti-overload OPP; undervoltage UVP Power dissipation: 29W Integrated circuit features: integrated bootstrap functionality Technology: ClPOS™ Mini; TRENCHSTOP™ Voltage class: 600V |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKCM15F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A Type of integrated circuit: driver Kind of integrated circuit: half-bridge Case: DIP24 Output current: 15A Mounting: THT Operating temperature: -40...125°C Maximum output current: 15A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPD040N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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ISZ040N03L5ISATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 37W Case: PG-TDSON-8 On-state resistance: 4mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7258SJXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 3mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 5.5...18V DC Interface: LIN Kind of package: reel; tape |
auf Bestellung 2394 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE7259-3GE | INFINEON TECHNOLOGIES |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC Supply voltage: 5.5...27V DC Interface: LIN Operating temperature: -40...150°C Mounting: SMD Type of integrated circuit: Ethernet interface DC supply current: 5mA Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: transceiver |
auf Bestellung 2313 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE7181EMXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Number of channels: 4 Kind of output: non-inverting Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Turn-off time: 200ns Turn-on time: 250ns Supply voltage: 7...34V DC Topology: H-bridge; push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7250VSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7268SKXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-14 Operating temperature: -40...150°C Number of transmitters: 2 Number of receivers: 2 Supply voltage: 5.5...40V DC Interface: LIN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7251VSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 3...5.5V DC Interface: CAN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7182EMXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Number of channels: 4 Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Turn-off time: 200ns Turn-on time: 250ns Supply voltage: 7...34V DC Topology: H-bridge; push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| TLE7230RAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 8 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-36 On-state resistance: 0.8Ω Operating temperature: -40...150°C Application: automotive industry Integrated circuit features: thermal protection Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TLE7250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| TLE7268LCXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-TSON-14 Operating temperature: -40...150°C Number of transmitters: 2 Number of receivers: 2 Supply voltage: 5.5...40V DC Interface: LIN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TLE75602ESDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.33A Number of channels: 14 Kind of output: N-Channel Mounting: SMD Case: TSSOP24 On-state resistance: 1Ω Operating temperature: -40...150°C Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPA037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain current: 75A Drain-source voltage: 80V |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) |
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IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Mounting: THT Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247PLUS-4 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.2kV Power dissipation: 440W Gate charge: 530nC Technology: TRENCHSTOP™ 6 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Case: SOT223 Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 45Ω Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.12A |
auf Bestellung 745 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPB65R099C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPI65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPL65R099C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Power dissipation: 128W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IPDQ65R099CFD7AXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 29A Power dissipation: 186W Gate-source voltage: 20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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TD122N22KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw Max. load current: 220A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 On-state resistance: 36mΩ Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Drain current: 3.7A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SC59 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPA032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 60V Drain current: 84A Case: TO220FP Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRG4BC40W-STRRP | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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S29AL016J70TFI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 16Mb FLASH Kind of memory: NOR Interface: CFI; parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IR2156STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF3805PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 130W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 130W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.59 EUR |
| 50+ | 2.5 EUR |
| IRF3805STRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3709ZSTRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD80R900P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2458 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.28 EUR |
| 58+ | 1.48 EUR |
| 68+ | 1.26 EUR |
| 82+ | 1.05 EUR |
| 100+ | 1 EUR |
| 500+ | 0.84 EUR |
| IPU80R900P7AKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 65+ | 1.32 EUR |
| 79+ | 1.09 EUR |
| 150+ | 1.01 EUR |
| IPS80R900P7AKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.37 EUR |
| IRLB4030PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.97 EUR |
| 20+ | 4.47 EUR |
| 26+ | 3.37 EUR |
| 29+ | 3 EUR |
| 50+ | 2.58 EUR |
| 100+ | 2.33 EUR |
| IRLB8314PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.37 EUR |
| IRS2008SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2005STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2003STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2007SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2001STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2011STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Input voltage: 10...20V
Output current: 1A
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Input voltage: 10...20V
Output current: 1A
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2004STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 0.13A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2093MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2005MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.87 EUR |
| ICE2PCS05GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Operating voltage: 11...25V DC
Topology: boost
Mounting: SMD
Input voltage: 85...265V
Output current: -1.5...2A
Operating temperature: -40...125°C
Duty cycle factor: 0...98.5%
Application: SMPS
Case: PG-DSO-8
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Operating voltage: 11...25V DC
Topology: boost
Mounting: SMD
Input voltage: 85...265V
Output current: -1.5...2A
Operating temperature: -40...125°C
Duty cycle factor: 0...98.5%
Application: SMPS
Case: PG-DSO-8
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
auf Bestellung 2221 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 70+ | 1.23 EUR |
| 84+ | 1.02 EUR |
| 85+ | 1 EUR |
| ICE2PCS01GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE2A180ZXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Operating voltage: 8.5...21V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 800V
Input voltage: 80...265V
Output current: 4.1A
Operating temperature: -25...130°C
Duty cycle factor: 0...77%
Application: SMPS
Power: 29/17W
Case: DIP7
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Operating voltage: 8.5...21V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 800V
Input voltage: 80...265V
Output current: 4.1A
Operating temperature: -25...130°C
Duty cycle factor: 0...77%
Application: SMPS
Power: 29/17W
Case: DIP7
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1ED020I12F2XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 0.6/1.2kV
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 0...28V; 4.5...5.5V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 0.6/1.2kV
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 0...28V; 4.5...5.5V
auf Bestellung 765 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.33 EUR |
| 18+ | 4.74 EUR |
| 21+ | 4.19 EUR |
| 25+ | 4.07 EUR |
| 1ED020I12FA2XUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1ED020I12FXUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED020I12-FI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Topology: IGBT half-bridge
Supply voltage: 0...5V; 14...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Topology: IGBT half-bridge
Supply voltage: 0...5V; 14...18V
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.94 EUR |
| 22+ | 3.95 EUR |
| 25+ | 3.61 EUR |
| 100+ | 3.15 EUR |
| 250+ | 2.84 EUR |
| 2ED020I12F2XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 7.01 EUR |
| BSP613PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.17 EUR |
| 60+ | 1.43 EUR |
| 71+ | 1.21 EUR |
| 100+ | 0.98 EUR |
| IPD060N03LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 78+ | 1.11 EUR |
| 87+ | 0.99 EUR |
| 117+ | 0.73 EUR |
| 133+ | 0.64 EUR |
| IRFP4227PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Mounting: THT
Power dissipation: 330W
Gate charge: 70nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247AC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Mounting: THT
Power dissipation: 330W
Gate charge: 70nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7490TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGCM15F60GA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Topology: IGBT three-phase bridge; thermistor
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Topology: IGBT three-phase bridge; thermistor
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.22 EUR |
| 10+ | 14.17 EUR |
| IKCM15F60GAXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD040N03LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.65 EUR |
| 82+ | 1.05 EUR |
| 120+ | 0.71 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| ISZ040N03L5ISATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7258SJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Kind of package: reel; tape
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 104+ | 0.82 EUR |
| 116+ | 0.74 EUR |
| 122+ | 0.7 EUR |
| TLE7259-3GE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC
Supply voltage: 5.5...27V DC
Interface: LIN
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: Ethernet interface
DC supply current: 5mA
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: transceiver
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC
Supply voltage: 5.5...27V DC
Interface: LIN
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: Ethernet interface
DC supply current: 5mA
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: transceiver
auf Bestellung 2313 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.55 EUR |
| 61+ | 1.39 EUR |
| 70+ | 1.23 EUR |
| 100+ | 1.12 EUR |
| 500+ | 1.04 EUR |
| TLE7181EMXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7250VSJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7268SKXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7251VSJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7182EMXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7230RAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7250SJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7250XSJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7268LCXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE75602ESDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA037N08N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.74 EUR |
| BSP373NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1025 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 106+ | 0.8 EUR |
| 152+ | 0.56 EUR |
| IKY75N120CS6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 440W
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 440W
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP125H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45Ω
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45Ω
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 105+ | 0.81 EUR |
| 141+ | 0.61 EUR |
| 158+ | 0.54 EUR |
| 200+ | 0.51 EUR |
| IPP65R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB65R099C6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI65R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPL65R099C7AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPDQ65R099CFD7AXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 750+ | 4.68 EUR |
| TD122N22KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSR302NL6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
On-state resistance: 36mΩ
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SC59
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
On-state resistance: 36mΩ
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SC59
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA032N06N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
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| IRG4BC40W-STRRP |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
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Mindestbestellmenge: 800 Stücke
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| S29AL016J70TFI010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 16Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 16Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
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