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IM393M6FXKLA1 IM393M6FXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393S6FXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Infineon-IM393-S6F-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393S6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393L6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IM393M6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393M6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393S6E2XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Infineon-IM393-S6E-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IM393S6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Infineon-IM393-S6F-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393X6E2XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393X6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393X6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IQE013N04LM6ATMA1 INFINEON TECHNOLOGIES Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES AUIRGP4062D.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 400 Stücke
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BB85702VH7902XTSA1 BB85702VH7902XTSA1 INFINEON TECHNOLOGIES BB837_BB857.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
auf Bestellung 1967 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
243+0.35 EUR
271+0.31 EUR
379+0.23 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 193 Stücke
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IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES irfp4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
28+3.06 EUR
29+2.96 EUR
31+2.77 EUR
32+2.68 EUR
100+2.5 EUR
Mindestbestellmenge: 28 Stücke
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IRFP4768PBFXKMA1 IRFP4768PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Pulsed drain current: 370A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.18 EUR
19+4.7 EUR
25+4.19 EUR
Mindestbestellmenge: 12 Stücke
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IRFP4321PBF IRFP4321PBF INFINEON TECHNOLOGIES irfp4321pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
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TD120N16SOFHPSA1 TD120N16SOFHPSA1 INFINEON TECHNOLOGIES TD120N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
3+40.2 EUR
5+37 EUR
Mindestbestellmenge: 3 Stücke
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BCR129WH6327 BCR129WH6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 14903 Stücke:
Lieferzeit 14-21 Tag (e)
481+0.18 EUR
719+0.12 EUR
903+0.094 EUR
1000+0.092 EUR
3000+0.089 EUR
Mindestbestellmenge: 481 Stücke
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 20mΩ
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
21+4.07 EUR
39+2.19 EUR
50+1.7 EUR
Mindestbestellmenge: 21 Stücke
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IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES irfml8244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Gate charge: 5.4nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 24mΩ
auf Bestellung 1466 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
298+0.29 EUR
336+0.25 EUR
481+0.18 EUR
556+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 239 Stücke
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IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5168 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
397+0.21 EUR
455+0.19 EUR
559+0.15 EUR
754+0.11 EUR
1023+0.083 EUR
1139+0.075 EUR
3000+0.064 EUR
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CY8C4125LTI-M445 CY8C4125LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
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CY8C4245LTI-M445 CY8C4245LTI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
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AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES AIKW75N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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ITS4200SMEPHUMA1 INFINEON TECHNOLOGIES ITS4200SMEP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Output current: 1.4A
Produkt ist nicht verfügbar
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CYPD3177-24LQXQ CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
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Lieferzeit 14-21 Tag (e)
490+2.14 EUR
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EVALPSIR2085TOBO1 INFINEON TECHNOLOGIES Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879 Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
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1+247.09 EUR
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BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90mA
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.86 EUR
122+0.7 EUR
147+0.58 EUR
262+0.32 EUR
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IRFR3806TRPBF IRFR3806TRPBF INFINEON TECHNOLOGIES irfr3806pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 71W
Technology: HEXFET®
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
41+2.09 EUR
66+1.29 EUR
73+1.18 EUR
89+0.96 EUR
100+0.88 EUR
250+0.79 EUR
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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.89 EUR
31+2.76 EUR
33+2.61 EUR
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IPB65R190CFDAATMA1 IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
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IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES IPB65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES IPB65R190CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES IPD65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
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IPL65R190E6AUMA1 IPL65R190E6AUMA1 INFINEON TECHNOLOGIES IPL65R190E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
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Lieferzeit 14-21 Tag (e)
42+2.05 EUR
53+1.59 EUR
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IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES IPD60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: DPAK; TO252
Produkt ist nicht verfügbar
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IPD60R360P7SE8228AUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
On-state resistance: 702mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Drain-source voltage: 600V
Case: DPAK3
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
On-state resistance: 715mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ PFD7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
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IPB013N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate charge: 203nC
On-state resistance: 1.3mΩ
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
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S25FL064LABMFB013 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
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S25FL128LAGMFB013 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FL128LAGNFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FL128SAGMFB013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL256SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FL512SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FL512SDSMFB013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
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S25FS512SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FS512SDSNFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
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IM393M6FXKLA1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
IM393M6FXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IM393S6FXKLA1 Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Infineon-IM393-S6F-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393S6E3XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393L6EXKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393M6E3XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393M6EXKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393S6E2XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Infineon-IM393-S6E-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393S6EXKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Infineon-IM393-S6F-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393X6E2XKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IM393X6E3XKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IM393X6EXKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
Produkt ist nicht verfügbar
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IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AUIRGP4062D AUIRGP4062D.pdf
AUIRGP4062D
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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BB85702VH7902XTSA1 BB837_BB857.pdf
BB85702VH7902XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
auf Bestellung 1967 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
243+0.35 EUR
271+0.31 EUR
379+0.23 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 193 Stücke
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IRFP4229PBF irfp4229pbf.pdf
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
28+3.06 EUR
29+2.96 EUR
31+2.77 EUR
32+2.68 EUR
100+2.5 EUR
Mindestbestellmenge: 28 Stücke
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IRFP4768PBFXKMA1 Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Pulsed drain current: 370A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.18 EUR
19+4.7 EUR
25+4.19 EUR
Mindestbestellmenge: 12 Stücke
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IRFP4321PBF irfp4321pbf.pdf
IRFP4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.09 EUR
Mindestbestellmenge: 12 Stücke
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TD120N16SOFHPSA1 TD120N16SOF.pdf
TD120N16SOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
auf Bestellung 9 Stücke:
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AnzahlPrivatkunde
3+40.2 EUR
5+37 EUR
Mindestbestellmenge: 3 Stücke
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BCR129WH6327 BCR129.pdf
BCR129WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCR129E6327 BCR129.pdf
BCR129E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCR133SH6327 BCR133.pdf
BCR133SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 14903 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
481+0.18 EUR
719+0.12 EUR
903+0.094 EUR
1000+0.092 EUR
3000+0.089 EUR
Mindestbestellmenge: 481 Stücke
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IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 20mΩ
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.07 EUR
39+2.19 EUR
50+1.7 EUR
Mindestbestellmenge: 21 Stücke
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IRFML8244TRPBF irfml8244pbf.pdf
IRFML8244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Gate charge: 5.4nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 24mΩ
auf Bestellung 1466 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
298+0.29 EUR
336+0.25 EUR
481+0.18 EUR
556+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 239 Stücke
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IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5168 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
397+0.21 EUR
455+0.19 EUR
559+0.15 EUR
754+0.11 EUR
1023+0.083 EUR
1139+0.075 EUR
3000+0.064 EUR
Mindestbestellmenge: 313 Stücke
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CY8C4125LTI-M445 CY8C4125AZI-M443.pdf
CY8C4125LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4245LTI-M445 CY8C4245AZI-M443.pdf
CY8C4245LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
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AIKW75N60CTXKSA1 AIKW75N60CT.pdf
AIKW75N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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ITS4200SMEPHUMA1 ITS4200SMEP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Output current: 1.4A
Produkt ist nicht verfügbar
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CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
CYPD3177-24LQXQ
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
490+2.14 EUR
Mindestbestellmenge: 490 Stücke
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EVALPSIR2085TOBO1 Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+247.09 EUR
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BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90mA
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
122+0.7 EUR
147+0.58 EUR
262+0.32 EUR
Mindestbestellmenge: 100 Stücke
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IRFR3806TRPBF irfr3806pbf.pdf
IRFR3806TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 71W
Technology: HEXFET®
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.09 EUR
66+1.29 EUR
73+1.18 EUR
89+0.96 EUR
100+0.88 EUR
250+0.79 EUR
Mindestbestellmenge: 41 Stücke
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IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+2.89 EUR
31+2.76 EUR
33+2.61 EUR
Mindestbestellmenge: 30 Stücke
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IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
IPB65R190CFDAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
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IPB65R190C7ATMA1 IPB65R190C7-DTE.pdf
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB65R190CFDATMA1 IPB65R190CFD-DTE.pdf
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPD65R190C7ATMA1 IPD65R190C7-DTE.pdf
IPD65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPL65R190E6AUMA1 IPL65R190E6-DTE.pdf
IPL65R190E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.05 EUR
53+1.59 EUR
Mindestbestellmenge: 42 Stücke
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IPD60R360P7ATMA1 IPD60R360P7.pdf
IPD60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
IPD60R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
On-state resistance: 0.36Ω
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: DPAK; TO252
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R360P7SE8228AUMA1 Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
On-state resistance: 702mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Drain-source voltage: 600V
Case: DPAK3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
On-state resistance: 715mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ PFD7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPB013N06NF2SATMA1 Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate charge: 203nC
On-state resistance: 1.3mΩ
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Produkt ist nicht verfügbar
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S25FL064LABMFB013 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FL128LAGMFB013 S25FL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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S25FL128SAGMFB013 001-98283%20Rev%20T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL256SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FL512SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FL512SDSMFB013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FS512SAGMFB013 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FS512SDSNFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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