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IAUC60N04S6N050HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC100N04S6L025ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
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BSP75N BSP75N INFINEON TECHNOLOGIES BSP75N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223; 1.8W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Technology: HITFET®
Power dissipation: 1.8W
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA1 BSZ086P03NS3EGATMA1 INFINEON TECHNOLOGIES BSZ086P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ084N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ086P03NS3GATMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES BSZ088N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 INFINEON TECHNOLOGIES BSZ088N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES irf8010.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
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50+1.74 EUR
51+1.69 EUR
55+1.57 EUR
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IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES irf8010spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSP78 BSP78 INFINEON TECHNOLOGIES BSP78.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Technology: HITFET®
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23+3.83 EUR
35+2.5 EUR
38+2.26 EUR
100+1.93 EUR
250+1.7 EUR
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BSP772T BSP772T INFINEON TECHNOLOGIES BSP772T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
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IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES irll024zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1274 Stücke:
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84+1.02 EUR
99+0.86 EUR
110+0.77 EUR
135+0.63 EUR
144+0.6 EUR
500+0.58 EUR
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ110N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
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BC857AE6327 BC857AE6327 INFINEON TECHNOLOGIES BC857B-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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IKW75N65SS5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
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IRL1404ZSTRLPBF IRL1404ZSTRLPBF INFINEON TECHNOLOGIES irl1404xxPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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36+2.4 EUR
40+2.13 EUR
53+1.62 EUR
100+1.45 EUR
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IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES IRL1404STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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SPW35N60CFDFKSA1 INFINEON TECHNOLOGIES SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
Reverse recovery time: 180ns
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IPP020N03LF2SAKSA1 IPP020N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 125A; 136W; TO220-3
On-state resistance: 2.05mΩ
Mounting: THT
Case: TO220-3
Power dissipation: 136W
Gate charge: 69nC
Polarisation: unipolar
Drain current: 125A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
auf Bestellung 200 Stücke:
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44+1.98 EUR
66+1.3 EUR
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PVDZ172NPBF PVDZ172NPBF INFINEON TECHNOLOGIES pvdz172.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 2ms
Switched voltage: 0...60V DC
Release time: 0.5ms
Max. operating current: 1.5A
On-state resistance: 0.25Ω
Type of relay: solid state
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7+13.61 EUR
10+12.58 EUR
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES IPB017N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 788 Stücke:
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11+8.1 EUR
18+4.74 EUR
20+4.32 EUR
25+3.96 EUR
50+3.77 EUR
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IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES IPW60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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ISP13DP06NMSATMA1 INFINEON TECHNOLOGIES Infineon-ISP13DP06NMS-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016ae951b44b1ccc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; 5W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Power dissipation: 5W
Gate charge: 20.2nC
Polarisation: unipolar
Drain current: -2.8A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
On-state resistance: 0.125Ω
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 INFINEON TECHNOLOGIES BGSX22G2A10.pdf Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: ATSLP-10-2
Supply voltage: 1.65...3.4V DC
Bandwidth: 0.1...6GHz
Application: telecommunication
Output configuration: DPDT
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BAV170E6327HTSA1 BAV170E6327HTSA1 INFINEON TECHNOLOGIES BAV170E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Power dissipation: 0.25W
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IR2112STRPBF IR2112STRPBF INFINEON TECHNOLOGIES IR2112STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 656 Stücke:
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33+2.64 EUR
36+2.42 EUR
50+2.4 EUR
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2EDL05N06PFXUMA1 2EDL05N06PFXUMA1 INFINEON TECHNOLOGIES 2EDL05x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -0.7...0.36A
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
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53+1.62 EUR
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IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES IRLS3034TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRLS3034 AUIRLS3034 INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 108nC
On-state resistance: 1.7mΩ
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IRF7311TRPBF IRF7311TRPBF INFINEON TECHNOLOGIES irf7311pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29GL128P10TFI010 S29GL128P10TFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; TSOP56; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Kind of interface: parallel
Case: TSOP56
Interface: CFI; parallel
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IPB014N04NF2SATMA1 IPB014N04NF2SATMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263
Mounting: SMD
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Kind of channel: enhancement
Case: D2PAK; TO263
Drain-source voltage: 40V
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES BSC014N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Power dissipation: 96W
Kind of channel: enhancement
Case: PG-TDSON-8
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
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BSC014N04LSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 3W; TDFN8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 1.4mΩ
Power dissipation: 3W
Case: TDFN8
Drain current: 33A
Drain-source voltage: 40V
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES IRFR3710ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Technology: HEXFET®
Power dissipation: 140W
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Mounting: SMD
auf Bestellung 1259 Stücke:
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30+2.93 EUR
35+2.46 EUR
40+2.18 EUR
56+1.55 EUR
100+1.34 EUR
250+1.14 EUR
500+1.04 EUR
1000+0.95 EUR
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 INFINEON TECHNOLOGIES BFR182WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 1481 Stücke:
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228+0.37 EUR
307+0.27 EUR
353+0.24 EUR
391+0.21 EUR
435+0.19 EUR
486+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 228 Stücke
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BFP196E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Kind of transistor: RF
Type of transistor: NPN
Current gain: 70...140
Kind of package: reel; tape
Case: SOT143
Frequency: 7.5GHz
Collector current: 0.15A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.7W
Polarisation: bipolar
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BFP196WNH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Current gain: 70
Case: SOT343
Frequency: 7.5GHz
Collector current: 0.15A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.7W
Polarisation: bipolar
Produkt ist nicht verfügbar
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BB639E7904HTSA1 BB639E7904HTSA1 INFINEON TECHNOLOGIES BB639_659.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
auf Bestellung 2131 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
365+0.24 EUR
527+0.17 EUR
575+0.14 EUR
1000+0.13 EUR
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IRFU024NPBF IRFU024NPBF INFINEON TECHNOLOGIES irfr024n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IKFW60N65ES5XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06 Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Power dissipation: 138W
Gate charge: 0.12µC
Technology: Field Stop; Trench
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector current: 77A
Turn-on switching energy: 1.23mJ
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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CY4500 CY4500 INFINEON TECHNOLOGIES Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
Produkt ist nicht verfügbar
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CY4533 CY4533 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Type of development kit: Cypress
Connection: USB C socket
Kind of module: evaluation board
Produkt ist nicht verfügbar
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CY3280-MBR3 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Type of development kit: Cypress
Connection: USB
Application - series/manufacturer: Arduino
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
Produkt ist nicht verfügbar
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CY8CPROTO-062-4343W INFINEON TECHNOLOGIES Infineon-CY8CPROTO-062-4343W_PSoC_6_Wi-Fi_BT_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0118571844&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Connection: microSD; USB
Type of development kit: Cypress
Kind of module: Bluetooth; prototype board; WiFi
Produkt ist nicht verfügbar
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
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97+0.88 EUR
103+0.83 EUR
111+0.77 EUR
117+0.74 EUR
123+0.69 EUR
500+0.61 EUR
1000+0.57 EUR
2000+0.54 EUR
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EVAL-IMM101T-015TOBO1 (SP004177748)EVAL-IMM101T-015TOBO1 (SP004177748)
EVAL-IMM101T-015TOBO1 (SP004177748)EVAL-IMM101T-015TOBO1 (SP004177748)
 EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Components: IMM101T-015M
Kit contents: prototype board
Application: motors
Connection: screw terminal x2
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Type of development kit: evaluation
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EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)
EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)
 EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-046M
Kind of module: motor driver
Application: motors
Kit contents: prototype board
Connection: screw terminal x2
Type of development kit: evaluation
Produkt ist nicht verfügbar
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IR2213SPBF IR2213SPBF INFINEON TECHNOLOGIES IR2213PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 12...20V DC
Output current: -2...1.7A
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 280ns
Power: 1.25W
Kind of package: tube
Case: SO16
Turn-off time: 225ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Produkt ist nicht verfügbar
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES AUIRGP35B60PD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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AUIRF7316QTR AUIRF7316QTR INFINEON TECHNOLOGIES auirf7316q.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
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IPA60R190E6XKSA1 IPA60R190E6XKSA1 INFINEON TECHNOLOGIES IPA60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 INFINEON TECHNOLOGIES IPA60R180P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.3 EUR
59+1.46 EUR
67+1.29 EUR
100+1.2 EUR
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IPA60R180P7XKSA1 IPA60R180P7XKSA1 INFINEON TECHNOLOGIES IPA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 INFINEON TECHNOLOGIES IPA60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
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26+3.32 EUR
28+3.09 EUR
37+2.31 EUR
41+2.07 EUR
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IPA60R400CEXKSA1 IPA60R400CEXKSA1 INFINEON TECHNOLOGIES IPA60R400CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
auf Bestellung 143 Stücke:
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42+2.06 EUR
46+1.86 EUR
49+1.77 EUR
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IPA60R099C7XKSA1 IPA60R099C7XKSA1 INFINEON TECHNOLOGIES IPA60R099C7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
auf Bestellung 28 Stücke:
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14+6.46 EUR
19+4.5 EUR
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IPA60R650CEXKSA1 IPA60R650CEXKSA1 INFINEON TECHNOLOGIES IPA60R650CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.5 EUR
61+1.39 EUR
70+1.21 EUR
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSP75N BSP75N.pdf
BSP75N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223; 1.8W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Technology: HITFET®
Power dissipation: 1.8W
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA1 BSZ086P03NS3EGATMA-DTE.pdf
BSZ086P03NS3EGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ084N08NS5ATMA1 BSZ084N08NS5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1-dte.pdf
BSZ086P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
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BSZ088N03LSGATMA1 BSZ088N03LSG-DTE.pdf
BSZ088N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSG-DTE.pdf
BSZ088N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF8010PBF description irf8010.pdf
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
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28+3.05 EUR
50+1.74 EUR
51+1.69 EUR
55+1.57 EUR
100+1.5 EUR
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IRF8010STRLPBF irf8010spbf.pdf
IRF8010STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP78 BSP78.pdf
BSP78
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Technology: HITFET®
auf Bestellung 975 Stücke:
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23+3.83 EUR
35+2.5 EUR
38+2.26 EUR
100+1.93 EUR
250+1.7 EUR
500+1.57 EUR
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BSP772T BSP772T.pdf
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1237 Stücke:
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18+5 EUR
25+3.42 EUR
100+2.7 EUR
250+2.43 EUR
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IRLL024ZTRPBF irll024zpbf.pdf
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1274 Stücke:
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AnzahlPrivatkunde
84+1.02 EUR
99+0.86 EUR
110+0.77 EUR
135+0.63 EUR
144+0.6 EUR
500+0.58 EUR
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BSZ110N08NS5ATMA1 BSZ110N08NS5-DTE.pdf
BSZ110N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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BC857AE6327 BC857B-DTE.pdf
BC857AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
353+0.24 EUR
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IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
auf Bestellung 480 Stücke:
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AnzahlPrivatkunde
240+11.9 EUR
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IRL1404ZSTRLPBF irl1404xxPBF.pdf
IRL1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 703 Stücke:
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28+3.06 EUR
36+2.4 EUR
40+2.13 EUR
53+1.62 EUR
100+1.45 EUR
500+1.26 EUR
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IRL1404STRLPBF IRL1404STRLPBF.pdf
IRL1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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SPW35N60CFDFKSA1 SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
Reverse recovery time: 180ns
auf Bestellung 30 Stücke:
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30+11.66 EUR
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IPP020N03LF2SAKSA1 Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d
IPP020N03LF2SAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 125A; 136W; TO220-3
On-state resistance: 2.05mΩ
Mounting: THT
Case: TO220-3
Power dissipation: 136W
Gate charge: 69nC
Polarisation: unipolar
Drain current: 125A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
auf Bestellung 200 Stücke:
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44+1.98 EUR
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PVDZ172NPBF description pvdz172.pdf
PVDZ172NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Control current: 5...25mA
Operate time: 2ms
Switched voltage: 0...60V DC
Release time: 0.5ms
Max. operating current: 1.5A
On-state resistance: 0.25Ω
Type of relay: solid state
auf Bestellung 27 Stücke:
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7+13.61 EUR
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IPB017N08N5ATMA1 IPB017N08N5-DTE.pdf
IPB017N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 788 Stücke:
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11+8.1 EUR
18+4.74 EUR
20+4.32 EUR
25+3.96 EUR
50+3.77 EUR
100+3.64 EUR
Mindestbestellmenge: 11 Stücke
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IPW60R165CPFKSA1 IPW60R165CP-DTE.pdf
IPW60R165CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP13DP06NMSATMA1 Infineon-ISP13DP06NMS-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016ae951b44b1ccc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; 5W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Power dissipation: 5W
Gate charge: 20.2nC
Polarisation: unipolar
Drain current: -2.8A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
On-state resistance: 0.125Ω
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 BGSX22G2A10.pdf
BGSX22G2A10E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: ATSLP-10-2
Supply voltage: 1.65...3.4V DC
Bandwidth: 0.1...6GHz
Application: telecommunication
Output configuration: DPDT
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
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56+1.51 EUR
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BAV170E6327HTSA1 BAV170E6327.pdf
BAV170E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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IR2112STRPBF IR2112STRPBF.pdf
IR2112STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 656 Stücke:
Lieferzeit 14-21 Tag (e)
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25+3.52 EUR
33+2.64 EUR
36+2.42 EUR
50+2.4 EUR
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2EDL05N06PFXUMA1 2EDL05x06xx.pdf
2EDL05N06PFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Number of channels: 2
Topology: MOSFET half-bridge
Output current: -0.7...0.36A
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
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53+1.62 EUR
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IRLS3034TRLPBF IRLS3034TRLPBF.pdf
IRLS3034TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRLS3034 AUIRLS3034.pdf
AUIRLS3034
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 108nC
On-state resistance: 1.7mΩ
Produkt ist nicht verfügbar
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IRF7311TRPBF irf7311pbf.pdf
IRF7311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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S29GL128P10TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P10TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; TSOP56; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Kind of interface: parallel
Case: TSOP56
Interface: CFI; parallel
auf Bestellung 849 Stücke:
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8+11.64 EUR
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IPB014N04NF2SATMA1
IPB014N04NF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263
Mounting: SMD
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Kind of channel: enhancement
Case: D2PAK; TO263
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BSC014N04LSATMA1 BSC014N04LS-DTE.pdf
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Power dissipation: 96W
Kind of channel: enhancement
Case: PG-TDSON-8
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 3W; TDFN8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 1.4mΩ
Power dissipation: 3W
Case: TDFN8
Drain current: 33A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFR3710ZTRPBF IRFR3710ZTRPBF.pdf
IRFR3710ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Technology: HEXFET®
Power dissipation: 140W
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Mounting: SMD
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30+2.93 EUR
35+2.46 EUR
40+2.18 EUR
56+1.55 EUR
100+1.34 EUR
250+1.14 EUR
500+1.04 EUR
1000+0.95 EUR
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BFR182WH6327XTSA1 BFR182WH6327.pdf
BFR182WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
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228+0.37 EUR
307+0.27 EUR
353+0.24 EUR
391+0.21 EUR
435+0.19 EUR
486+0.18 EUR
1000+0.17 EUR
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BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Kind of transistor: RF
Type of transistor: NPN
Current gain: 70...140
Kind of package: reel; tape
Case: SOT143
Frequency: 7.5GHz
Collector current: 0.15A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.7W
Polarisation: bipolar
Produkt ist nicht verfügbar
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BFP196WNH6327XTSA1 Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Current gain: 70
Case: SOT343
Frequency: 7.5GHz
Collector current: 0.15A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.7W
Polarisation: bipolar
Produkt ist nicht verfügbar
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BB639E7904HTSA1 BB639_659.pdf
BB639E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
auf Bestellung 2131 Stücke:
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AnzahlPrivatkunde
179+0.48 EUR
365+0.24 EUR
527+0.17 EUR
575+0.14 EUR
1000+0.13 EUR
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IRFU024NPBF irfr024n.pdf
IRFU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IKFW60N65ES5XKSA1 Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Power dissipation: 138W
Gate charge: 0.12µC
Technology: Field Stop; Trench
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector current: 77A
Turn-on switching energy: 1.23mJ
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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CY4500 Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4500
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
Produkt ist nicht verfügbar
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CY4533 download
CY4533
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Type of development kit: Cypress
Connection: USB C socket
Kind of module: evaluation board
Produkt ist nicht verfügbar
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CY3280-MBR3 download
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Type of development kit: Cypress
Connection: USB
Application - series/manufacturer: Arduino
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
Produkt ist nicht verfügbar
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CY8CPROTO-062-4343W Infineon-CY8CPROTO-062-4343W_PSoC_6_Wi-Fi_BT_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0118571844&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Connection: microSD; USB
Type of development kit: Cypress
Kind of module: Bluetooth; prototype board; WiFi
Produkt ist nicht verfügbar
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IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
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44+1.94 EUR
97+0.88 EUR
103+0.83 EUR
111+0.77 EUR
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2000+0.54 EUR
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EVAL-IMM101T-015TOBO1 (SP004177748) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-015TOBO1 (SP004177748)EVAL-IMM101T-015TOBO1 (SP004177748)
EVAL-IMM101T-015TOBO1 (SP004177748)EVAL-IMM101T-015TOBO1 (SP004177748)
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Components: IMM101T-015M
Kit contents: prototype board
Application: motors
Connection: screw terminal x2
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Type of development kit: evaluation
auf Bestellung 2 Stücke:
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EVAL-IMM101T-046TOBO1 (SP004177752) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)
EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)EVAL-IMM101T-046TOBO1 (SP004177752)
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-046M
Kind of module: motor driver
Application: motors
Kit contents: prototype board
Connection: screw terminal x2
Type of development kit: evaluation
Produkt ist nicht verfügbar
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IR2213SPBF IR2213PBF.pdf
IR2213SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 12...20V DC
Output current: -2...1.7A
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 280ns
Power: 1.25W
Kind of package: tube
Case: SO16
Turn-off time: 225ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Produkt ist nicht verfügbar
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AUIRGP35B60PD AUIRGP35B60PD.pdf
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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AUIRF7316QTR auirf7316q.pdf
AUIRF7316QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
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IPA60R190E6XKSA1 IPA60R190E6-DTE.pdf
IPA60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 IPA60R180P7S.pdf
IPA60R180P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
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38+2.3 EUR
59+1.46 EUR
67+1.29 EUR
100+1.2 EUR
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IPA60R180P7XKSA1 IPA60R180P7.pdf
IPA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 IPA60R280P6-DTE.pdf
IPA60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
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26+3.32 EUR
28+3.09 EUR
37+2.31 EUR
41+2.07 EUR
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IPA60R400CEXKSA1 IPA60R400CE-DTE.pdf
IPA60R400CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
auf Bestellung 143 Stücke:
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42+2.06 EUR
46+1.86 EUR
49+1.77 EUR
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IPA60R099C7XKSA1 IPA60R099C7.pdf
IPA60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
auf Bestellung 28 Stücke:
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14+6.46 EUR
19+4.5 EUR
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IPA60R650CEXKSA1 IPA60R650CE-DTE.pdf
IPA60R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
auf Bestellung 70 Stücke:
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57+1.5 EUR
61+1.39 EUR
70+1.21 EUR
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