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6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
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3000+2.32 EUR
Mindestbestellmenge: 3000
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BSC022N04LSATMA1 BSC022N04LSATMA1 Infineon Technologies BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9 Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Produkt ist nicht verfügbar
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6ED003L02F2XUMA1 6ED003L02F2XUMA1 Infineon Technologies Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190 Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10198 Stücke:
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4+4.56 EUR
10+3.42 EUR
25+3.13 EUR
100+2.82 EUR
250+2.67 EUR
500+2.58 EUR
1000+2.5 EUR
Mindestbestellmenge: 4
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6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14902 Stücke:
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4+4.77 EUR
10+3.58 EUR
25+3.28 EUR
100+2.95 EUR
250+2.79 EUR
500+2.7 EUR
1000+2.62 EUR
Mindestbestellmenge: 4
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BSC022N04LSATMA1 BSC022N04LSATMA1 Infineon Technologies BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9 Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
auf Bestellung 3900 Stücke:
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6+3.15 EUR
10+2.01 EUR
100+1.36 EUR
500+1.09 EUR
1000+1 EUR
2000+0.92 EUR
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BGA715N7E6327XTSA2 BGA715N7E6327XTSA2 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
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7500+1.13 EUR
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BGA715N7E6327XTSA2 BGA715N7E6327XTSA2 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
auf Bestellung 14529 Stücke:
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10+1.95 EUR
11+1.68 EUR
25+1.59 EUR
100+1.45 EUR
250+1.38 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 10
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AUIRF8736M2TR AUIRF8736M2TR Infineon Technologies auirf8736m2.pdf?fileId=5546d462533600a4015355b0dade1414 Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFP4568 AUIRFP4568 Infineon Technologies auirfp4568.pdf?fileId=5546d462533600a4015355b1d8751458 Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 129 Stücke:
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1+22.99 EUR
25+14.44 EUR
100+12.47 EUR
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AUIRFS8407-7P AUIRFS8407-7P Infineon Technologies auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5 Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
auf Bestellung 7 Stücke:
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2+14.87 EUR
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IRAC27951SR IRAC27951SR Infineon Technologies irac27951sr-240w.pdf?fileId=5546d462533600a4015356971f172bd7 Description: EVAL BOARD FOR IR11682 IRS27951
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Current - Output: 10A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11682, IRS27951
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Contents: Board(s)
Produkt ist nicht verfügbar
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IRAM256-1567A2 Infineon Technologies IRAM256-1567A.pdf Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IRAM630-1562F2 Infineon Technologies IRAM630-1562F.pdf Description: IC MOD PWR HYBRID 600V 15A
Produkt ist nicht verfügbar
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IRAMS10UP60B-S Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRAMS10UP60B-W Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRAMT20TP60A Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOD PWR HYBRID 600V 20A
Packaging: Tube
Package / Case: Module
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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IRFB7740PBF IRFB7740PBF Infineon Technologies IRSD-S-A0000576246-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
Produkt ist nicht verfügbar
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IRFH8201TRPBF IRFH8201TRPBF Infineon Technologies irfh8201pbf.pdf?fileId=5546d462533600a40153561f75651f0a Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
auf Bestellung 4000 Stücke:
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4000+0.93 EUR
Mindestbestellmenge: 4000
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IRFH8202TRPBF IRFH8202TRPBF Infineon Technologies irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Produkt ist nicht verfügbar
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IRFH8303TRPBF IRFH8303TRPBF Infineon Technologies irfh8303pbf.pdf?fileId=5546d462533600a40153561f84a41f0e Description: MOSFET N-CH 30V 43A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V
Produkt ist nicht verfügbar
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IRFH8307TRPBF IRFH8307TRPBF Infineon Technologies irfh8307pbf.pdf?fileId=5546d462533600a40153561f8baa1f10 Description: MOSFET N-CH 30V 42A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Produkt ist nicht verfügbar
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IRFS7430TRL7PP IRFS7430TRL7PP Infineon Technologies infineon-irfs7430-7p-datasheet-en.pdf?fileId=5546d462533600a4015356635f1a2599 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.19 EUR
1600+2.14 EUR
Mindestbestellmenge: 800
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IRFS7730TRL7PP IRFS7730TRL7PP Infineon Technologies infineon-irfs7730-7p-datasheet-en.pdf Description: MOSFET N-CH 75V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.41 EUR
1600+2.39 EUR
Mindestbestellmenge: 800
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IRFS7730TRLPBF IRFS7730TRLPBF Infineon Technologies irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.2 EUR
Mindestbestellmenge: 800
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IRFS7734TRL7PP IRFS7734TRL7PP Infineon Technologies irfs7734-7ppbf.pdf?fileId=5546d462533600a40153563ac71b21e6 Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
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IRFS7734TRLPBF IRFS7734TRLPBF Infineon Technologies irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2 Description: MOSFET N-CH 75V 183A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
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IRFS7787TRLPBF IRFS7787TRLPBF Infineon Technologies irfs7787pbf.pdf?fileId=5546d462533600a40153563ad73d21eb Description: MOSFET N-CH 75V 76A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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IRFSL7540PBF IRFSL7540PBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
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IRG7PH28UEF IRG7PH28UEF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 1200V 15A TO247
Packaging: Bulk
Part Status: Obsolete
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IRGB4620DPBF IRGB4620DPBF Infineon Technologies IRGx4620D(-E)PbF.pdf Description: IGBT 600V 32A 140W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGR4607DPBF IRGR4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGR4607DTRLPBF IRGR4607DTRLPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGR4607DTRPBF IRGR4607DTRPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO252-3
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 1.5A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGR4607DTRRPBF IRGR4607DTRRPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGR4610DTRLPBF IRGR4610DTRLPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGR4610DTRPBF IRGR4610DTRPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: PG-TO252-3
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGR4610DTRRPBF IRGR4610DTRRPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGS4607DTRRPBF IRGS4607DTRRPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
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IRGS4610DTRLPBF IRGS4610DTRLPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A 77W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGS4610DTRRPBF IRGS4610DTRRPBF Infineon Technologies IRGx4610DPbF.pdf Description: IGBT 600V 16A 77W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRGS4615DTRLPBF IRGS4615DTRLPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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IRGS4620DTRLPBF IRGS4620DTRLPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A 140W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGS4620DTRRPBF IRGS4620DTRRPBF Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A 140W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGS4630DPBF IRGS4630DPBF Infineon Technologies IRGx4630D%28-E%29PbF.pdf Description: IGBT 600V 47A 206W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
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IRGS4630DTRLPBF IRGS4630DTRLPBF Infineon Technologies IRGx4630D(-E)PbF.pdf Description: IGBT 600V 47A 206W D2PAK
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IRGS4630DTRRPBF IRGS4630DTRRPBF Infineon Technologies IRGx4630D(-E)PbF.pdf Description: IGBT 600V 47A 206W D2PAK
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IRLS3813TRLPBF IRLS3813TRLPBF Infineon Technologies irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710 Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: D²PAK (TO-263AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
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IRMCF143TR IRMCF143TR Infineon Technologies irmcf143.pdf?fileId=5546d462533600a40153567237442731 Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (10x10)
Motor Type - AC, DC: AC, Servo
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IRMCF171TR IRMCF171TR Infineon Technologies irmcf171.pdf?fileId=5546d462533600a40153567246602737 Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET
Supplier Device Package: 48-LQFP (7x7)
Motor Type - AC, DC: AC, Induction, Synchronous
Part Status: Not For New Designs
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IRMCF171TY IRMCF171TY Infineon Technologies irmcf171.pdf?fileId=5546d462533600a40153567246602737 Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET
Supplier Device Package: 48-LQFP (7x7)
Motor Type - AC, DC: AC, Induction, Synchronous
Part Status: Not For New Designs
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IRMCF188TR Infineon Technologies irmcf188.pdf?fileId=5546d462533600a4015356725530273b Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (12x12)
Motor Type - AC, DC: AC, Induction, Synchronous
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IRMCK172M IRMCK172M Infineon Technologies IRMCK172M.pdf Description: IC MOTOR DRIVER 3V-3.6V 48QFN
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IRMCK172MTR Infineon Technologies IRMCK172M.pdf Description: IC MOTOR DRIVER 3V-3.6V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: AC, Induction, Synchronous
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IRMCK182M Infineon Technologies IRMCK182M.pdf Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
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IRMCK182MTR Infineon Technologies IRMCK182M.pdf Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
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IRPLLED13 Infineon Technologies an-1177.pdf?fileId=5546d462533600a40153559ae543114e Description: EVAL BOARD FOR IRS2980
Packaging: Box
Voltage - Input: 90 ~ 250 VAC
Contents: Board(s)
Current - Output / Channel: 350mA
Utilized IC / Part: IRS2980
Outputs and Type: 1 Non-Isolated Output
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IRPLLED5 Infineon Technologies reference-design-irplled5-5546d462533600a4015356a030b92c8f Description: EVAL BOARD FOR IRS2548D
Packaging: Box
Features: Dimmable
Voltage - Input: 90 ~ 305 VAC
Current - Output / Channel: 1.4A
Utilized IC / Part: IRS2548D
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
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IRS20965STRPBF IRS20965STRPBF Infineon Technologies irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b Description: IC AMP CLASS D MONO 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IRFS7434TRLPBF IRFS7434TRLPBF Infineon Technologies irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.57 EUR
1600+1.46 EUR
2400+1.45 EUR
Mindestbestellmenge: 800
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MB39A138PFT-G-JN-ERE1 MB39A138PFT-G-JN-ERE1 Infineon Technologies download Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Topology: Buck
Voltage - Supply (Vcc/Vdd): 6V ~ 24V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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6EDL04N02PRXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N02PRXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.32 EUR
Mindestbestellmenge: 3000
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BSC022N04LSATMA1 BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9
BSC022N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Produkt ist nicht verfügbar
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6ED003L02F2XUMA1 Infineon-6ED003L0x_F2-DS-v02_09-EN.pdf?fileId=db3a3043315daf4401316108306d4190
6ED003L02F2XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
10+3.42 EUR
25+3.13 EUR
100+2.82 EUR
250+2.67 EUR
500+2.58 EUR
1000+2.5 EUR
Mindestbestellmenge: 4
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6EDL04N02PRXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N02PRXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
10+3.58 EUR
25+3.28 EUR
100+2.95 EUR
250+2.79 EUR
500+2.7 EUR
1000+2.62 EUR
Mindestbestellmenge: 4
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BSC022N04LSATMA1 BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9
BSC022N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.01 EUR
100+1.36 EUR
500+1.09 EUR
1000+1 EUR
2000+0.92 EUR
Mindestbestellmenge: 6
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BGA715N7E6327XTSA2 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA715N7E6327XTSA2
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+1.13 EUR
Mindestbestellmenge: 7500
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BGA715N7E6327XTSA2 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA715N7E6327XTSA2
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.7dB
Test Frequency: 1.575GHz
Supplier Device Package: TSNP-7-1
Part Status: Not For New Designs
auf Bestellung 14529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
11+1.68 EUR
25+1.59 EUR
100+1.45 EUR
250+1.38 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 10
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AUIRF8736M2TR auirf8736m2.pdf?fileId=5546d462533600a4015355b0dade1414
AUIRF8736M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFP4568 auirfp4568.pdf?fileId=5546d462533600a4015355b1d8751458
AUIRFP4568
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.99 EUR
25+14.44 EUR
100+12.47 EUR
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AUIRFS8407-7P auirfs8407-7p.pdf?fileId=5546d462533600a4015355b71d0614e5
AUIRFS8407-7P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.87 EUR
Mindestbestellmenge: 2
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IRAC27951SR irac27951sr-240w.pdf?fileId=5546d462533600a4015356971f172bd7
IRAC27951SR
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IR11682 IRS27951
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 250 ~ 300 VAC, 350V ~ 420V
Current - Output: 10A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11682, IRS27951
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Contents: Board(s)
Produkt ist nicht verfügbar
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IRAM256-1567A2 IRAM256-1567A.pdf
Hersteller: Infineon Technologies
Description: IC MOD PWR HY 600V 15A 29PWRSSIP
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IRAM630-1562F2 IRAM630-1562F.pdf
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 15A
Produkt ist nicht verfügbar
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IRAMS10UP60B-S fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRAMS10UP60B-W fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRAMT20TP60A fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 20A
Packaging: Tube
Package / Case: Module
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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IRFB7740PBF IRSD-S-A0000576246-1.pdf?t.download=true&u=5oefqw
IRFB7740PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 52A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 25 V
Produkt ist nicht verfügbar
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IRFH8201TRPBF irfh8201pbf.pdf?fileId=5546d462533600a40153561f75651f0a
IRFH8201TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 49A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 13 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.93 EUR
Mindestbestellmenge: 4000
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IRFH8202TRPBF irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c
IRFH8202TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Produkt ist nicht verfügbar
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IRFH8303TRPBF irfh8303pbf.pdf?fileId=5546d462533600a40153561f84a41f0e
IRFH8303TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 43A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 24 V
Produkt ist nicht verfügbar
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IRFH8307TRPBF irfh8307pbf.pdf?fileId=5546d462533600a40153561f8baa1f10
IRFH8307TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 42A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Produkt ist nicht verfügbar
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IRFS7430TRL7PP infineon-irfs7430-7p-datasheet-en.pdf?fileId=5546d462533600a4015356635f1a2599
IRFS7430TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.19 EUR
1600+2.14 EUR
Mindestbestellmenge: 800
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IRFS7730TRL7PP infineon-irfs7730-7p-datasheet-en.pdf
IRFS7730TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 428 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13970 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.41 EUR
1600+2.39 EUR
Mindestbestellmenge: 800
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IRFS7730TRLPBF irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc
IRFS7730TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.2 EUR
Mindestbestellmenge: 800
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IRFS7734TRL7PP irfs7734-7ppbf.pdf?fileId=5546d462533600a40153563ac71b21e6
IRFS7734TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 197A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10130 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS7734TRLPBF irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2
IRFS7734TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 183A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS7787TRLPBF irfs7787pbf.pdf?fileId=5546d462533600a40153563ad73d21eb
IRFS7787TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 76A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Produkt ist nicht verfügbar
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IRFSL7540PBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFSL7540PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Produkt ist nicht verfügbar
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IRG7PH28UEF Part_Number_Guide_Web.pdf
IRG7PH28UEF
Hersteller: Infineon Technologies
Description: IGBT 1200V 15A TO247
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRGB4620DPBF IRGx4620D(-E)PbF.pdf
IRGB4620DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A 140W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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IRGR4607DPBF IRGx4607DPbF.pdf
IRGR4607DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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IRGR4607DTRLPBF IRGx4607DPbF.pdf
IRGR4607DTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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IRGR4607DTRPBF IRGx4607DPbF.pdf
IRGR4607DTRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO252-3
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 1.5A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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IRGR4607DTRRPBF IRGx4607DPbF.pdf
IRGR4607DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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IRGR4610DTRLPBF IRGx4610DPbF.pdf
IRGR4610DTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGR4610DTRPBF IRGx4610DPbF.pdf
IRGR4610DTRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: PG-TO252-3
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGR4610DTRRPBF IRGx4610DPbF.pdf
IRGR4610DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGS4607DTRRPBF IRGx4607DPbF.pdf
IRGS4607DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Produkt ist nicht verfügbar
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IRGS4610DTRLPBF IRGx4610DPbF.pdf
IRGS4610DTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A 77W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGS4610DTRRPBF IRGx4610DPbF.pdf
IRGS4610DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A 77W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGS4615DTRLPBF IRGx4615DPbF.pdf
IRGS4615DTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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IRGS4620DTRLPBF IRGx4620D%28-E%29PbF.pdf
IRGS4620DTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A 140W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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IRGS4620DTRRPBF IRGx4620D%28-E%29PbF.pdf
IRGS4620DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 32A 140W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
Produkt ist nicht verfügbar
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IRGS4630DPBF IRGx4630D%28-E%29PbF.pdf
IRGS4630DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
Produkt ist nicht verfügbar
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IRGS4630DTRLPBF IRGx4630D(-E)PbF.pdf
IRGS4630DTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Produkt ist nicht verfügbar
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IRGS4630DTRRPBF IRGx4630D(-E)PbF.pdf
IRGS4630DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 47A 206W D2PAK
Produkt ist nicht verfügbar
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IRLS3813TRLPBF irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710
IRLS3813TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: D²PAK (TO-263AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Produkt ist nicht verfügbar
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IRMCF143TR irmcf143.pdf?fileId=5546d462533600a40153567237442731
IRMCF143TR
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (10x10)
Motor Type - AC, DC: AC, Servo
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IRMCF171TR irmcf171.pdf?fileId=5546d462533600a40153567246602737
IRMCF171TR
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET
Supplier Device Package: 48-LQFP (7x7)
Motor Type - AC, DC: AC, Induction, Synchronous
Part Status: Not For New Designs
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IRMCF171TY irmcf171.pdf?fileId=5546d462533600a40153567246602737
IRMCF171TY
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET
Supplier Device Package: 48-LQFP (7x7)
Motor Type - AC, DC: AC, Induction, Synchronous
Part Status: Not For New Designs
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IRMCF188TR irmcf188.pdf?fileId=5546d462533600a4015356725530273b
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (12x12)
Motor Type - AC, DC: AC, Induction, Synchronous
Produkt ist nicht verfügbar
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IRMCK172M IRMCK172M.pdf
IRMCK172M
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48QFN
Produkt ist nicht verfügbar
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IRMCK172MTR IRMCK172M.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: AC, Induction, Synchronous
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IRMCK182M IRMCK182M.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
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IRMCK182MTR IRMCK182M.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 28MLPQ
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IRPLLED13 an-1177.pdf?fileId=5546d462533600a40153559ae543114e
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS2980
Packaging: Box
Voltage - Input: 90 ~ 250 VAC
Contents: Board(s)
Current - Output / Channel: 350mA
Utilized IC / Part: IRS2980
Outputs and Type: 1 Non-Isolated Output
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IRPLLED5 reference-design-irplled5-5546d462533600a4015356a030b92c8f
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS2548D
Packaging: Box
Features: Dimmable
Voltage - Input: 90 ~ 305 VAC
Current - Output / Channel: 1.4A
Utilized IC / Part: IRS2548D
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
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IRS20965STRPBF irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b
IRS20965STRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
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IRFS7434TRLPBF irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc
IRFS7434TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.57 EUR
1600+1.46 EUR
2400+1.45 EUR
Mindestbestellmenge: 800
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MB39A138PFT-G-JN-ERE1 download
MB39A138PFT-G-JN-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Topology: Buck
Voltage - Supply (Vcc/Vdd): 6V ~ 24V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
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