Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149885) > Seite 213 nach 2499
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ESD105B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 14VC PGTSLP220Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD110B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 18.5VWM 17VC PGTSSLP24Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD112B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 21VC PGTSLP220Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD113B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.6VWM 8V PGTSSLP24Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI Capacitance @ Frequency: 0.22pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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ESD203B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 13.2V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.7V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 115W Power Line Protection: No Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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ESD204B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 14VWM 28VC TSLP-2-20Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 4pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.5V Voltage - Clamping (Max) @ Ipp: 28V Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD206B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 9.6VC TSLP-2-19Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 9.6V (Typ) Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD207B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 14pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSSLP-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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ESD208B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BGT24MR2E6327XUMA1 | Infineon Technologies |
Description: IC MMIC 24GHZ TWIN IQ RX 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Receiver Frequency: 24GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
Produkt ist nicht verfügbar |
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BGT24MTR11E6327XUMA1 | Infineon Technologies |
Description: IC MMIC 24GHZ TWIN IQ RX 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 26GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
Produkt ist nicht verfügbar |
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BGT24MTR12E6327XUMA1 | Infineon Technologies |
Description: IC MMIC 24GHZ TWIN IQ RX 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 24.25GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAT1502LRHE6327XTSA1 | Infineon Technologies |
Description: RF DIODE SCHOTTKY 4V 100MW TSLP2Packaging: Cut Tape (CT) Package / Case: SOD-882 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-TSLP-2-7 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
auf Bestellung 17420 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP760H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4V 45GHZ SOT-343Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16.5dB ~ 29dB Power - Max: 240mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 4V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
auf Bestellung 11708 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP843H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.25V PGSOT-343-4-3Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 24.5dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz Supplier Device Package: PG-SOT343-4-3 |
auf Bestellung 8963 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP843FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.25V TSFP-4-1Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 25dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz Supplier Device Package: PG-TSFP-4-1 |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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BFR720L3RHE6327XTSA1 | Infineon Technologies |
Description: TRANS RF NPN 4V 20MA TSLP-3 |
Produkt ist nicht verfügbar |
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BGA524N6E6327XTSA1 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSNP6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.3V Gain: 19.6dB Current - Supply: 2.5mA Noise Figure: 0.55dB P1dB: -12dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 Part Status: Active |
Produkt ist nicht verfügbar |
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BGA751N7E6327XTSA1 | Infineon Technologies |
Description: IC AMP CELLULAR 850MHZ TSNP7-1Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 850MHz RF Type: Cellular Voltage - Supply: 2.6V ~ 3V Gain: 15.3dB Current - Supply: 3.3mA Noise Figure: 1.1dB Test Frequency: 850MHz Supplier Device Package: TSNP-7-1 |
Produkt ist nicht verfügbar |
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BGA824N6E6327XTSA1 | Infineon Technologies |
Description: IC AMP GALI 1.55-1.615GHZ TSNP6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.164GHz ~ 1.615GHz RF Type: BeiDou, Galileo, GLONASS, GNSS, GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 17dB Current - Supply: 3.8mA Noise Figure: 0.55dB P1dB: -9dBm Test Frequency: 1.164GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 |
auf Bestellung 7538 Stücke: Lieferzeit 10-14 Tag (e) |
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BGSF18DM20E6727XUMA1 | Infineon Technologies |
Description: IC SWITCH SP8T HP SPI 20SMD |
Produkt ist nicht verfügbar |
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ESD101B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 30VC PGTSLP220Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V (Typ) Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 52276 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD103B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 15VWM 48V PGTSLP220Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.13pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 21V (Typ) Voltage - Clamping (Max) @ Ipp: 48V (Typ) Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 118030 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD105B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 14VC PGTSLP220Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 58737 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD112B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 21VC PGTSLP220Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 59183 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD113B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.6VWM 8V PGTSSLP24Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI Capacitance @ Frequency: 0.22pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 4288 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD203B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 13.2V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.7V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 115W Power Line Protection: No Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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ESD207B102ELSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 14pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSSLP-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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ESD208B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Not For New Designs |
auf Bestellung 43524 Stücke: Lieferzeit 10-14 Tag (e) |
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BGT24MR2E6327XUMA1 | Infineon Technologies |
Description: IC MMIC 24GHZ TWIN IQ RX 32QFNPackaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Receiver Frequency: 24GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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BGT24MTR11E6327XUMA1 | Infineon Technologies |
Description: IC MMIC 24GHZ TWIN IQ RX 32QFNPackaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 26GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
Produkt ist nicht verfügbar |
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BGT24MTR12E6327XUMA1 | Infineon Technologies |
Description: IC MMIC 24GHZ TWIN IQ RX 32QFNPackaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 24.25GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
auf Bestellung 1991 Stücke: Lieferzeit 10-14 Tag (e) |
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BFR720L3RHE6327XTSA1 | Infineon Technologies |
Description: TRANS RF NPN 4V 20MA TSLP-3 |
Produkt ist nicht verfügbar |
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BGSF18DM20E6727XUMA1 | Infineon Technologies |
Description: IC SWITCH SP8T HP SPI 20SMD |
Produkt ist nicht verfügbar |
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BAR6402ELE6327XTMA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW TSLP219Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-TSLP-2-19 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6402ELE6327XTMA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW TSLP219Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-TSLP-2-19 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 64105 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR9002ELE6327XTMA1 | Infineon Technologies |
Description: RF DIODE PIN 80V 250MW TSLP-2-19Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz Resistance @ If, F: 800mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 80V Supplier Device Package: PG-TSLP-2-19 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP04N60C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 4.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |
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CY7C65213-28PVXI | Infineon Technologies |
Description: IC USB-SERIAL PART 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Function: Bridge, USB to UART Interface: UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 28-SSOP Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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BTN8982TAAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 50A TO263-7Packaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 50A Current - Peak Output: 117A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BTN8962TAAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO263-7Packaging: Tape & Reel (TR) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 30A Current - Peak Output: 70A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BTN8982TAAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 50A TO263-7Packaging: Cut Tape (CT) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 50A Current - Peak Output: 117A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
auf Bestellung 3766 Stücke: Lieferzeit 10-14 Tag (e) |
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BTN8962TAAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO263-7Packaging: Cut Tape (CT) Features: Latch Function, Slew Rate Controlled, Status Flag Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 5.5V ~ 40V Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 30A Current - Peak Output: 70A Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
auf Bestellung 1170 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB7537PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 173A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
auf Bestellung 573 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB7540PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 110A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB7546PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 75A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 2408 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP7530PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
auf Bestellung 6029 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP7537PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 172A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 172A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7530-7PPBF | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKPackaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRFS7530PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRFS7534-7PPBF | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKPackaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRFS7534PBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRFS7530TRL7PP | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7530TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7537TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 173A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7540TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 110A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1302T016X0032AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 11x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-8 Number of I/O: 11 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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XMC1302T016X0032AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 11x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-8 Number of I/O: 11 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BSP318SH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 2.6A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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6ED003L02F2XUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28TSSOPPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 13V ~ 17.5V Input Type: Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ESD105B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 14VC PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.11 EUR |
| ESD110B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 18.5VWM 17VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
Description: TVS DIODE 18.5VWM 17VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD112B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.3VWM 21VC PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.1 EUR |
| ESD113B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 8V PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.6VWM 8V PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD203B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
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| ESD204B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
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| ESD206B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.6VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
Description: TVS DIODE 5.5VWM 9.6VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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| ESD207B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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| ESD208B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.095 EUR |
| 30000+ | 0.088 EUR |
| BGT24MR2E6327XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Produkt ist nicht verfügbar
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| BGT24MTR11E6327XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
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| BGT24MTR12E6327XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAT1502LRHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V 100MW TSLP2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE SCHOTTKY 4V 100MW TSLP2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 17420 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 22+ | 0.8 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.66 EUR |
| BFP760H6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF TRANS NPN 4V 45GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANS NPN 4V 45GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 11708 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 20+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| BFP843H6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V PGSOT-343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
Description: RF TRANS NPN 2.25V PGSOT-343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
auf Bestellung 8963 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| BFP843FH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| BFR720L3RHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
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| BGA524N6E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -12dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -12dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BGA751N7E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Produkt ist nicht verfügbar
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| BGA824N6E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: BeiDou, Galileo, GLONASS, GNSS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: BeiDou, Galileo, GLONASS, GNSS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
auf Bestellung 7538 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 22+ | 0.83 EUR |
| 25+ | 0.78 EUR |
| 100+ | 0.71 EUR |
| 250+ | 0.67 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.62 EUR |
| 5000+ | 0.56 EUR |
| BGSF18DM20E6727XUMA1 |
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Hersteller: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Description: IC SWITCH SP8T HP SPI 20SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD101B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 30VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 52276 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 71+ | 0.25 EUR |
| 116+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| ESD103B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 15VWM 48V PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 118030 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 0.6 EUR |
| 98+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| ESD105B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 14VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 58737 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 53+ | 0.34 EUR |
| 119+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| ESD112B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.3VWM 21VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 59183 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 52+ | 0.34 EUR |
| 124+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| ESD113B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 8V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.6VWM 8V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 4288 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 67+ | 0.27 EUR |
| 105+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| ESD203B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 13.2VWM 23VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD207B102ELSE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD208B102ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.3VWM 8.1VC PGTSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 43524 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.11 EUR |
| BGT24MR2E6327XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.03 EUR |
| 10+ | 12.06 EUR |
| 25+ | 11.07 EUR |
| 100+ | 9.99 EUR |
| BGT24MTR11E6327XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGT24MTR12E6327XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 1991 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 28.53 EUR |
| 10+ | 22.64 EUR |
| 25+ | 21.17 EUR |
| 100+ | 19.56 EUR |
| 250+ | 18.79 EUR |
| 500+ | 18.32 EUR |
| BFR720L3RHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGSF18DM20E6727XUMA1 |
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Hersteller: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Description: IC SWITCH SP8T HP SPI 20SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6402ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.081 EUR |
| 30000+ | 0.079 EUR |
| 45000+ | 0.078 EUR |
| BAR6402ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW TSLP219
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 64105 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.23 EUR |
| 115+ | 0.15 EUR |
| 131+ | 0.13 EUR |
| 155+ | 0.11 EUR |
| 250+ | 0.1 EUR |
| 500+ | 0.098 EUR |
| 1000+ | 0.093 EUR |
| 2500+ | 0.088 EUR |
| 5000+ | 0.085 EUR |
| BAR9002ELE6327XTMA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.073 EUR |
| SPP04N60C3XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65213-28PVXI |
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Hersteller: Infineon Technologies
Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 3.99 EUR |
| 47+ | 3.48 EUR |
| 141+ | 3.23 EUR |
| 282+ | 3.11 EUR |
| 517+ | 3.02 EUR |
| 1034+ | 2.93 EUR |
| 2538+ | 2.85 EUR |
| BTN8982TAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 4.92 EUR |
| 2000+ | 4.82 EUR |
| 3000+ | 4.76 EUR |
| BTN8962TAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Tape & Reel (TR)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTN8982TAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 50A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 3766 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.54 EUR |
| 10+ | 6.53 EUR |
| 25+ | 6.03 EUR |
| 100+ | 5.47 EUR |
| 250+ | 5.21 EUR |
| 500+ | 5.05 EUR |
| BTN8962TAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Cut Tape (CT)
Features: Latch Function, Slew Rate Controlled, Status Flag
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.01 EUR |
| 10+ | 6.12 EUR |
| 25+ | 5.64 EUR |
| 100+ | 5.12 EUR |
| 250+ | 4.87 EUR |
| 500+ | 4.72 EUR |
| IRFB7537PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.03 EUR |
| 50+ | 1.99 EUR |
| 100+ | 1.79 EUR |
| 500+ | 1.44 EUR |
| IRFB7540PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.99 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.03 EUR |
| IRFB7546PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 50+ | 1.06 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.62 EUR |
| IRFP7530PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 6029 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.64 EUR |
| 25+ | 3.79 EUR |
| 100+ | 3.1 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.42 EUR |
| IRFP7537PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.63 EUR |
| 25+ | 3.18 EUR |
| 100+ | 2.59 EUR |
| IRFS7530-7PPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7530PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7534-7PPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7534PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7530TRL7PP |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 2.44 EUR |
| IRFS7530TRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 2.31 EUR |
| 1600+ | 2.25 EUR |
| IRFS7537TRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 1.57 EUR |
| IRFS7540TRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 1.36 EUR |
| XMC1302T016X0032AAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1302T016X0032AAXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP318SH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 6ED003L02F2XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.21 EUR |



























