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ESD204B102ELE6327XTMA1 ESD204B102ELE6327XTMA1 Infineon Technologies ESD204-B1-02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d354e3ab309c7 Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Produkt ist nicht verfügbar
ESD206B102ELE6327XTMA1 ESD206B102ELE6327XTMA1 Infineon Technologies ESD206-B1-02series_rev_1_5.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433fcce646013fe701bf8e67f3 Description: TVS DIODE 5.5V 9.6V TSLP-2-19
Produkt ist nicht verfügbar
ESD207B102ELSE6327XTSA1 ESD207B102ELSE6327XTSA1 Infineon Technologies ESD207-B1-02.pdf Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
ESD208B102ELE6327XTMA1 ESD208B102ELE6327XTMA1 Infineon Technologies ESD208-B1-02+Series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043429a38690142c241d4cb2c0f Description: TVS DIODE 3.3VWM 8.1VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 15000
BGT24MR2E6327XUMA1 BGT24MR2E6327XUMA1 Infineon Technologies BGT24MR2_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df072eae0242 Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+8.81 EUR
Mindestbestellmenge: 1000
BGT24MTR11E6327XUMA1 BGT24MTR11E6327XUMA1 Infineon Technologies BGT24MTR11_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139def491930214 Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+13.93 EUR
Mindestbestellmenge: 1000
BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 Infineon Technologies BGT24MTR12_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df108e75025b Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Produkt ist nicht verfügbar
BAT1502LRHE6327XTSA1 BAT1502LRHE6327XTSA1 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: RF DIODE SCHOTTKY 4V 100MW TSLP2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 12697 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
2000+ 0.64 EUR
5000+ 0.61 EUR
Mindestbestellmenge: 12
BFP760H6327XTSA1 BFP760H6327XTSA1 Infineon Technologies Infineon-BFP760-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896a7a64eb0 Description: RF TRANS NPN 4V 45GHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 14282 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
BFP843H6327XTSA1 BFP843H6327XTSA1 Infineon Technologies Infineon-BFP843-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896d8ec4ebf Description: RF TRANS NPN 2.25V SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
auf Bestellung 6037 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
BFP843FH6327XTSA1 BFP843FH6327XTSA1 Infineon Technologies Infineon-BFP843F-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896e2564ec2 Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.71 EUR
100+ 0.5 EUR
Mindestbestellmenge: 21
BFR720L3RHE6327XTSA1 BFR720L3RHE6327XTSA1 Infineon Technologies Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740 Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
BGA524N6E6327XTSA1 BGA524N6E6327XTSA1 Infineon Technologies BGA524N6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304344e406b50144e44dfad302b9 Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -16dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
auf Bestellung 63787 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
17+ 1.08 EUR
25+ 0.97 EUR
100+ 0.85 EUR
250+ 0.75 EUR
500+ 0.66 EUR
1000+ 0.52 EUR
5000+ 0.46 EUR
Mindestbestellmenge: 15
BGA751N7E6327XTSA1 BGA751N7E6327XTSA1 Infineon Technologies BGA751N7.pdf Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Produkt ist nicht verfügbar
BGA777N7E6327XTSA1 BGA777N7E6327XTSA1 Infineon Technologies BGA777N7.pdf Description: IC AMP UMTS 2.3-2.7GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16dB
Current - Supply: 4.2mA
Noise Figure: 1.2dB
Test Frequency: 2.3GHz ~ 2.7MHz
Supplier Device Package: TSNP-7-1
auf Bestellung 6455 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
10+ 1.86 EUR
25+ 1.68 EUR
100+ 1.47 EUR
250+ 1.29 EUR
500+ 1.14 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
BGA824N6E6327XTSA1 BGA824N6E6327XTSA1 Infineon Technologies BGA824N6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f764301013f7b53cdd02721 Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Produkt ist nicht verfügbar
BGM1043N7E6327XUSA1 BGM1043N7E6327XUSA1 Infineon Technologies BGM1043N7.pdf Description: IC AMP GALI 1575.42MHZ TSNP7-10
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 14.6dB, 15.1dB
Current - Supply: 4mA
Noise Figure: 1.5dB
P1dB: -6dBm
Test Frequency: 1575.42MHz, 1598.06MHz ~ 1605.38MHz
Supplier Device Package: TSNP-7-10
Produkt ist nicht verfügbar
BGSF18DM20E6727XUMA1 BGSF18DM20E6727XUMA1 Infineon Technologies BGSF18DM20.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f2e70c5013f334cfa28119c Description: IC SWITCH SP8T HP SPI 20SMD
Produkt ist nicht verfügbar
ESD101B102ELE6327XTMA1 ESD101B102ELE6327XTMA1 Infineon Technologies ESD101_B1_02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Description: TVS DIODE 5.5VWM 30VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 46487 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
ESD103B102ELE6327XTMA1 ESD103B102ELE6327XTMA1 Infineon Technologies ESD103-B1-02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b Description: TVS DIODE 15VWM 48VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 31646 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
ESD105B102ELE6327XTMA1 ESD105B102ELE6327XTMA1 Infineon Technologies ESD105_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30434358307d01437c468ff01c72 Description: TVS DIODE 5.5VWM 14VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 36743 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
ESD112B102ELE6327XTMA1 ESD112B102ELE6327XTMA1 Infineon Technologies ESD112-B1-02series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3aa400953906 Description: TVS DIODE 5.3VWM 21VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 25253 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
ESD113B102ELSE6327XTSA1 ESD113B102ELSE6327XTSA1 Infineon Technologies Infineon-ESD113-B1Series-DS-v01_02-EN.pdf?fileId=5546d4614815da88014864b5329e1de7 Description: TVS DIODE 3.6VWM 8VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 33319 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
ESD203B102ELSE6327XTSA1 ESD203B102ELSE6327XTSA1 Infineon Technologies ESD203-B1-02series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433fcce646013fe718d01a6811 Description: TVS DIODE 13.2VWM 23VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
ESD207B102ELSE6327XTSA1 ESD207B102ELSE6327XTSA1 Infineon Technologies ESD207-B1-02.pdf Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
ESD208B102ELE6327XTMA1 ESD208B102ELE6327XTMA1 Infineon Technologies ESD208-B1-02+Series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043429a38690142c241d4cb2c0f Description: TVS DIODE 3.3VWM 8.1VC TSLP-2-19
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 83160 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
5000+ 0.12 EUR
Mindestbestellmenge: 25
BGT24MR2E6327XUMA1 BGT24MR2E6327XUMA1 Infineon Technologies BGT24MR2_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df072eae0242 Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.52 EUR
10+ 14.03 EUR
25+ 13.38 EUR
100+ 11.61 EUR
250+ 11.09 EUR
500+ 10.11 EUR
Mindestbestellmenge: 2
BGT24MTR11E6327XUMA1 BGT24MTR11E6327XUMA1 Infineon Technologies BGT24MTR11_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139def491930214 Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
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1+22 EUR
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500+ 15.19 EUR
BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 Infineon Technologies BGT24MTR12_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df108e75025b Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 2293 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.32 EUR
10+ 17.76 EUR
25+ 17.02 EUR
100+ 16.2 EUR
BFR720L3RHE6327XTSA1 BFR720L3RHE6327XTSA1 Infineon Technologies Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740 Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
BGSF18DM20E6727XUMA1 BGSF18DM20E6727XUMA1 Infineon Technologies BGSF18DM20.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f2e70c5013f334cfa28119c Description: IC SWITCH SP8T HP SPI 20SMD
Produkt ist nicht verfügbar
BAR6402ELE6327XTMA1 BAR6402ELE6327XTMA1 Infineon Technologies Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Description: RF DIODE PIN 150V 250MW TSLP2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.1 EUR
Mindestbestellmenge: 15000
BAR6402ELE6327XTMA1 BAR6402ELE6327XTMA1 Infineon Technologies Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Description: RF DIODE PIN 150V 250MW TSLP2-19
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 37916 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
35+ 0.51 EUR
40+ 0.44 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2500+ 0.13 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 27
BAR9002ELE6327XTMA1 BAR9002ELE6327XTMA1 Infineon Technologies Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.1 EUR
30000+ 0.096 EUR
75000+ 0.085 EUR
105000+ 0.082 EUR
Mindestbestellmenge: 15000
SPP04N60C3XKSA1 SPP04N60C3XKSA1 Infineon Technologies SPP_A04N60C3_Rev.3.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900 Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
CY7C65213-28PVXI CY7C65213-28PVXI Infineon Technologies CYPR-S-A0004572493-1.pdf?t.download=true&u=5oefqw Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
10+ 5.43 EUR
47+ 5.13 EUR
141+ 4.45 EUR
282+ 4.22 EUR
517+ 3.79 EUR
1034+ 3.19 EUR
2538+ 3.03 EUR
Mindestbestellmenge: 3
BTN8982TAAUMA1 BTN8982TAAUMA1 Infineon Technologies BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.54 EUR
2000+ 5.26 EUR
Mindestbestellmenge: 1000
BTN8962TAAUMA1 BTN8962TAAUMA1 Infineon Technologies BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.09 EUR
2000+ 4.83 EUR
Mindestbestellmenge: 1000
BTN8982TAAUMA1 BTN8982TAAUMA1 Infineon Technologies BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 5676 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.47 EUR
10+ 9.42 EUR
25+ 8.9 EUR
100+ 7.72 EUR
250+ 7.32 EUR
500+ 6.57 EUR
Mindestbestellmenge: 2
BTN8962TAAUMA1 BTN8962TAAUMA1 Infineon Technologies BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 12161 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.63 EUR
10+ 8.65 EUR
25+ 8.18 EUR
100+ 7.09 EUR
250+ 6.72 EUR
500+ 6.03 EUR
Mindestbestellmenge: 2
IRFB7537PBF IRFB7537PBF Infineon Technologies irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
50+ 2.81 EUR
100+ 2.32 EUR
500+ 1.96 EUR
1000+ 1.66 EUR
2000+ 1.58 EUR
Mindestbestellmenge: 6
IRFB7540PBF IRFB7540PBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
50+ 2.15 EUR
100+ 1.71 EUR
Mindestbestellmenge: 7
IRFB7546PBF IRFB7546PBF Infineon Technologies irfb7546pbf.pdf?fileId=5546d462533600a401535619ea0e1e68 Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 3460 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
50+ 1.07 EUR
100+ 0.85 EUR
500+ 0.72 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 14
IRFP7530PBF IRFP7530PBF Infineon Technologies irfp7530pbf.pdf?fileId=5546d462533600a40153562caf372027 Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
25+ 4.54 EUR
100+ 3.89 EUR
Mindestbestellmenge: 4
IRFP7537PBF IRFP7537PBF Infineon Technologies irfp7537pbf.pdf?fileId=5546d462533600a40153562cb6662029 Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.54 EUR
25+ 4.39 EUR
100+ 3.77 EUR
Mindestbestellmenge: 4
IRFS7530-7PPBF IRFS7530-7PPBF Infineon Technologies irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8 Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7530PBF IRFS7530PBF Infineon Technologies irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3 Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7534-7PPBF IRFS7534-7PPBF Infineon Technologies irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7534PBF IRFS7534PBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7530TRL7PP IRFS7530TRL7PP Infineon Technologies irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8 Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.6 EUR
1600+ 3.09 EUR
2400+ 2.91 EUR
Mindestbestellmenge: 800
IRFS7530TRLPBF IRFS7530TRLPBF Infineon Technologies irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3 Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.26 EUR
1600+ 2.8 EUR
2400+ 2.63 EUR
5600+ 2.53 EUR
Mindestbestellmenge: 800
IRFS7537TRLPBF IRFS7537TRLPBF Infineon Technologies irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7540TRLPBF IRFS7540TRLPBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Produkt ist nicht verfügbar
XMC1302T016X0032AAXUMA1 XMC1302T016X0032AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Produkt ist nicht verfügbar
XMC1302T016X0032AAXUMA1 XMC1302T016X0032AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Produkt ist nicht verfügbar
BSP318SH6327XTSA1 BSP318SH6327XTSA1 Infineon Technologies BSP318S.pdf Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.61 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 1000
6ED003L02F2XUMA1 6ED003L02F2XUMA1 Infineon Technologies 6ED-F2-DB-Rev2_5.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a3043315daf4401316108306d4190 Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.81 EUR
6000+ 2.7 EUR
Mindestbestellmenge: 3000
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 Infineon Technologies 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.87 EUR
Mindestbestellmenge: 3000
BSC022N04LSATMA1 BSC022N04LSATMA1 Infineon Technologies BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9 Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.97 EUR
10000+ 0.93 EUR
Mindestbestellmenge: 5000
6ED003L02F2XUMA1 6ED003L02F2XUMA1 Infineon Technologies 6ED-F2-DB-Rev2_5.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a3043315daf4401316108306d4190 Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10993 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.6 EUR
10+ 5.03 EUR
25+ 4.75 EUR
100+ 4.12 EUR
250+ 3.91 EUR
500+ 3.51 EUR
1000+ 2.96 EUR
Mindestbestellmenge: 4
ESD204B102ELE6327XTMA1 ESD204-B1-02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d354e3ab309c7
ESD204B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Produkt ist nicht verfügbar
ESD206B102ELE6327XTMA1 ESD206-B1-02series_rev_1_5.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433fcce646013fe701bf8e67f3
ESD206B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5V 9.6V TSLP-2-19
Produkt ist nicht verfügbar
ESD207B102ELSE6327XTSA1 ESD207-B1-02.pdf
ESD207B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
ESD208B102ELE6327XTMA1 ESD208-B1-02+Series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043429a38690142c241d4cb2c0f
ESD208B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15000+0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 15000
BGT24MR2E6327XUMA1 BGT24MR2_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df072eae0242
BGT24MR2E6327XUMA1
Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+8.81 EUR
Mindestbestellmenge: 1000
BGT24MTR11E6327XUMA1 BGT24MTR11_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139def491930214
BGT24MTR11E6327XUMA1
Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+13.93 EUR
Mindestbestellmenge: 1000
BGT24MTR12E6327XUMA1 BGT24MTR12_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df108e75025b
BGT24MTR12E6327XUMA1
Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Produkt ist nicht verfügbar
BAT1502LRHE6327XTSA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT1502LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V 100MW TSLP2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 12697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
2000+ 0.64 EUR
5000+ 0.61 EUR
Mindestbestellmenge: 12
BFP760H6327XTSA1 Infineon-BFP760-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896a7a64eb0
BFP760H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4V 45GHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 14282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
23+ 0.77 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
BFP843H6327XTSA1 Infineon-BFP843-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896d8ec4ebf
BFP843H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
auf Bestellung 6037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.4 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
BFP843FH6327XTSA1 Infineon-BFP843F-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896e2564ec2
BFP843FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.71 EUR
100+ 0.5 EUR
Mindestbestellmenge: 21
BFR720L3RHE6327XTSA1 Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740
BFR720L3RHE6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
BGA524N6E6327XTSA1 BGA524N6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304344e406b50144e44dfad302b9
BGA524N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -16dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
auf Bestellung 63787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.21 EUR
17+ 1.08 EUR
25+ 0.97 EUR
100+ 0.85 EUR
250+ 0.75 EUR
500+ 0.66 EUR
1000+ 0.52 EUR
5000+ 0.46 EUR
Mindestbestellmenge: 15
BGA751N7E6327XTSA1 BGA751N7.pdf
BGA751N7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Produkt ist nicht verfügbar
BGA777N7E6327XTSA1 BGA777N7.pdf
BGA777N7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 2.3-2.7GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16dB
Current - Supply: 4.2mA
Noise Figure: 1.2dB
Test Frequency: 2.3GHz ~ 2.7MHz
Supplier Device Package: TSNP-7-1
auf Bestellung 6455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
10+ 1.86 EUR
25+ 1.68 EUR
100+ 1.47 EUR
250+ 1.29 EUR
500+ 1.14 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
BGA824N6E6327XTSA1 BGA824N6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f764301013f7b53cdd02721
BGA824N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Produkt ist nicht verfügbar
BGM1043N7E6327XUSA1 BGM1043N7.pdf
BGM1043N7E6327XUSA1
Hersteller: Infineon Technologies
Description: IC AMP GALI 1575.42MHZ TSNP7-10
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 14.6dB, 15.1dB
Current - Supply: 4mA
Noise Figure: 1.5dB
P1dB: -6dBm
Test Frequency: 1575.42MHz, 1598.06MHz ~ 1605.38MHz
Supplier Device Package: TSNP-7-10
Produkt ist nicht verfügbar
BGSF18DM20E6727XUMA1 BGSF18DM20.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f2e70c5013f334cfa28119c
BGSF18DM20E6727XUMA1
Hersteller: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Produkt ist nicht verfügbar
ESD101B102ELE6327XTMA1 ESD101_B1_02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
ESD101B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 46487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
ESD103B102ELE6327XTMA1 ESD103-B1-02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b
ESD103B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 15VWM 48VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 31646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
ESD105B102ELE6327XTMA1 ESD105_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30434358307d01437c468ff01c72
ESD105B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 36743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 23
ESD112B102ELE6327XTMA1 ESD112-B1-02series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3aa400953906
ESD112B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 25253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
ESD113B102ELSE6327XTSA1 Infineon-ESD113-B1Series-DS-v01_02-EN.pdf?fileId=5546d4614815da88014864b5329e1de7
ESD113B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 8VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 33319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.52 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 25
ESD203B102ELSE6327XTSA1 ESD203-B1-02series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433fcce646013fe718d01a6811
ESD203B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 13.2VWM 23VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
ESD207B102ELSE6327XTSA1 ESD207-B1-02.pdf
ESD207B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
ESD208B102ELE6327XTMA1 ESD208-B1-02+Series_rev_1_3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043429a38690142c241d4cb2c0f
ESD208B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSLP-2-19
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 83160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
5000+ 0.12 EUR
Mindestbestellmenge: 25
BGT24MR2E6327XUMA1 BGT24MR2_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df072eae0242
BGT24MR2E6327XUMA1
Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.52 EUR
10+ 14.03 EUR
25+ 13.38 EUR
100+ 11.61 EUR
250+ 11.09 EUR
500+ 10.11 EUR
Mindestbestellmenge: 2
BGT24MTR11E6327XUMA1 BGT24MTR11_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139def491930214
BGT24MTR11E6327XUMA1
Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 7110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22 EUR
10+ 20.21 EUR
25+ 19.37 EUR
100+ 17.07 EUR
250+ 16.23 EUR
500+ 15.19 EUR
BGT24MTR12E6327XUMA1 BGT24MTR12_v3.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304339dcf4b10139df108e75025b
BGT24MTR12E6327XUMA1
Hersteller: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
auf Bestellung 2293 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.32 EUR
10+ 17.76 EUR
25+ 17.02 EUR
100+ 16.2 EUR
BFR720L3RHE6327XTSA1 Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740
BFR720L3RHE6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
BGSF18DM20E6727XUMA1 BGSF18DM20.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f2e70c5013f334cfa28119c
BGSF18DM20E6727XUMA1
Hersteller: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Produkt ist nicht verfügbar
BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
BAR6402ELE6327XTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15000+0.1 EUR
Mindestbestellmenge: 15000
BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
BAR6402ELE6327XTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP2-19
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 37916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
35+ 0.51 EUR
40+ 0.44 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.15 EUR
2500+ 0.13 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 27
BAR9002ELE6327XTMA1 Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e
BAR9002ELE6327XTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-19
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15000+0.1 EUR
30000+ 0.096 EUR
75000+ 0.085 EUR
105000+ 0.082 EUR
Mindestbestellmenge: 15000
SPP04N60C3XKSA1 SPP_A04N60C3_Rev.3.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900
SPP04N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
CY7C65213-28PVXI CYPR-S-A0004572493-1.pdf?t.download=true&u=5oefqw
CY7C65213-28PVXI
Hersteller: Infineon Technologies
Description: IC USB-SERIAL PART 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Bridge, USB to UART
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.05 EUR
10+ 5.43 EUR
47+ 5.13 EUR
141+ 4.45 EUR
282+ 4.22 EUR
517+ 3.79 EUR
1034+ 3.19 EUR
2538+ 3.03 EUR
Mindestbestellmenge: 3
BTN8982TAAUMA1 BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t
BTN8982TAAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+5.54 EUR
2000+ 5.26 EUR
Mindestbestellmenge: 1000
BTN8962TAAUMA1 BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t
BTN8962TAAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+5.09 EUR
2000+ 4.83 EUR
Mindestbestellmenge: 1000
BTN8982TAAUMA1 BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t
BTN8982TAAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 5676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.47 EUR
10+ 9.42 EUR
25+ 8.9 EUR
100+ 7.72 EUR
250+ 7.32 EUR
500+ 6.57 EUR
Mindestbestellmenge: 2
BTN8962TAAUMA1 BTN8962TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe2d247a7bf5&ack=t
BTN8962TAAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 5.5V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
auf Bestellung 12161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.63 EUR
10+ 8.65 EUR
25+ 8.18 EUR
100+ 7.09 EUR
250+ 6.72 EUR
500+ 6.03 EUR
Mindestbestellmenge: 2
IRFB7537PBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
IRFB7537PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.5 EUR
50+ 2.81 EUR
100+ 2.32 EUR
500+ 1.96 EUR
1000+ 1.66 EUR
2000+ 1.58 EUR
Mindestbestellmenge: 6
IRFB7540PBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFB7540PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.69 EUR
50+ 2.15 EUR
100+ 1.71 EUR
Mindestbestellmenge: 7
IRFB7546PBF irfb7546pbf.pdf?fileId=5546d462533600a401535619ea0e1e68
IRFB7546PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 45A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 3460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.34 EUR
50+ 1.07 EUR
100+ 0.85 EUR
500+ 0.72 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 14
IRFP7530PBF irfp7530pbf.pdf?fileId=5546d462533600a40153562caf372027
IRFP7530PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.72 EUR
25+ 4.54 EUR
100+ 3.89 EUR
Mindestbestellmenge: 4
IRFP7537PBF irfp7537pbf.pdf?fileId=5546d462533600a40153562cb6662029
IRFP7537PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 172A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 172A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.54 EUR
25+ 4.39 EUR
100+ 3.77 EUR
Mindestbestellmenge: 4
IRFS7530-7PPBF irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8
IRFS7530-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7530PBF irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3
IRFS7530PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7534-7PPBF irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da
IRFS7534-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7534PBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFS7534PBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7530TRL7PP irfs7530-7ppbf.pdf?fileId=5546d462533600a40153563a9d1e21d8
IRFS7530TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 354 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12960 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.6 EUR
1600+ 3.09 EUR
2400+ 2.91 EUR
Mindestbestellmenge: 800
IRFS7530TRLPBF irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3
IRFS7530TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.26 EUR
1600+ 2.8 EUR
2400+ 2.63 EUR
5600+ 2.53 EUR
Mindestbestellmenge: 800
IRFS7537TRLPBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
IRFS7537TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Produkt ist nicht verfügbar
IRFS7540TRLPBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFS7540TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Produkt ist nicht verfügbar
XMC1302T016X0032AAXUMA1 XMC1300.pdf
XMC1302T016X0032AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Produkt ist nicht verfügbar
XMC1302T016X0032AAXUMA1 XMC1300.pdf
XMC1302T016X0032AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Produkt ist nicht verfügbar
BSP318SH6327XTSA1 BSP318S.pdf
BSP318SH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.61 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 1000
6ED003L02F2XUMA1 6ED-F2-DB-Rev2_5.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a3043315daf4401316108306d4190
6ED003L02F2XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.81 EUR
6000+ 2.7 EUR
Mindestbestellmenge: 3000
6EDL04N02PRXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
6EDL04N02PRXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.87 EUR
Mindestbestellmenge: 3000
BSC022N04LSATMA1 BSC022N04LS_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e82b1cf013e8454ca6c03c9
BSC022N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.97 EUR
10000+ 0.93 EUR
Mindestbestellmenge: 5000
6ED003L02F2XUMA1 6ED-F2-DB-Rev2_5.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a3043315daf4401316108306d4190
6ED003L02F2XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.6 EUR
10+ 5.03 EUR
25+ 4.75 EUR
100+ 4.12 EUR
250+ 3.91 EUR
500+ 3.51 EUR
1000+ 2.96 EUR
Mindestbestellmenge: 4
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