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IRSM515-015PA IRSM515-015PA Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC MOTOR DRIVER 600V 23SOP
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IRSM515-035DA2 Infineon Technologies irsm505-035.pdf Description: IC MOTOR DRIVER 600V 23DIP
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IRSM515-044DA2 Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC MOTOR DRIVER 600V 23DIP
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CY14B116L-ZS25XI CY14B116L-ZS25XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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CY14B116N-Z30XI CY14B116N-Z30XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116N-ZSP25XI CY14B116N-ZSP25XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116N-ZSP45XI CY14B116N-ZSP45XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY14B116S-BZ25XI CY14B116S-BZ25XI Infineon Technologies download Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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CY14V116N-BZ30XI CY14V116N-BZ30XI Infineon Technologies Infineon-CY14V116N_16-Mbit_(1024K_X_16)_nvSRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0aeea354b Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY8C4014PVI-412 CY8C4014PVI-412 Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY8C4125AXI-473 CY8C4125AXI-473 Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C4245AXI-473 CY8C4245AXI-473 Infineon Technologies Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C5888AXI-LP096 CY8C5888AXI-LP096 Infineon Technologies infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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CYUSB2014-BZXC CYUSB2014-BZXC Infineon Technologies download Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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CYUSB3064-BZXC CYUSB3064-BZXC Infineon Technologies Infineon-CYUSB306X_EZ-USB_CX3_MIPI_CSI-2_TO_SUPERSPEED_USB_BRIDGE_CONTROLLER-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbbb354559&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
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CYUSB3064-BZXI CYUSB3064-BZXI Infineon Technologies Infineon-CYUSB306X_EZ-USB_CX3_MIPI_CSI-2_TO_SUPERSPEED_USB_BRIDGE_CONTROLLER-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbbb354559&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Number of I/O: 12
DigiKey Programmable: Not Verified
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CYUSB3065-BZXC CYUSB3065-BZXC Infineon Technologies Infineon-CYUSB306X_EZ-USB_CX3_MIPI_CSI-2_TO_SUPERSPEED_USB_BRIDGE_CONTROLLER-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbbb354559&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC EZ-USB BRIDGE 4LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 1089 Stücke:
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 Infineon Technologies Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
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IKW30N65NL5XKSA1 IKW30N65NL5XKSA1 Infineon Technologies IKW30N65NL5.pdf Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 59ns/283ns
Switching Energy: 560µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 23Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
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IKZ75N65NH5XKSA1 IKZ75N65NH5XKSA1 Infineon Technologies IKZ75N65NH5.pdf Description: IGBT TRENCH 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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IKZ50N65NH5XKSA1 IKZ50N65NH5XKSA1 Infineon Technologies IKZ50N65NH5.pdf Description: IGBT 650V 50A CO-PACK TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
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IGZ100N65H5XKSA1 IGZ100N65H5XKSA1 Infineon Technologies Infineon-IGZ100N65H5-DS-v02_01-EN.pdf?fileId=5546d4624933b875014979f66db81f51 Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1 Infineon Technologies Infineon-IGZ75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624933b875014979ffa7531f5b Description: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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IGZ50N65H5XKSA1 IGZ50N65H5XKSA1 Infineon Technologies Infineon-IGZ50N65H5-DS-v02_01-EN.pdf?fileId=5546d4624933b875014979f674161f53 Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
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HFA08TB60PBF HFA08TB60PBF Infineon Technologies hfa08tb60pbf.pdf?fileId=5546d462533600a4015355bfd7ed15d5 Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA15PB60PBF HFA15PB60PBF Infineon Technologies hfa15pb60pbf.pdf?fileId=5546d462533600a4015355bfe01115d7 Description: DIODE STANDARD 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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HFA15TB60PBF HFA15TB60PBF Infineon Technologies hfa15tb60pbf.pdf?fileId=5546d462533600a4015355bfe89215d9 Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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IRF7480MTRPBF IRF7480MTRPBF Infineon Technologies irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Description: MOSFET N-CH 40V 217A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V
auf Bestellung 10495 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
10+3.09 EUR
100+2.14 EUR
500+1.81 EUR
Mindestbestellmenge: 4
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IRFH7191TRPBF IRFH7191TRPBF Infineon Technologies IRFH7191PbF.pdf Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH7787TRPBF IRFH7787TRPBF Infineon Technologies irfh7787pbf.pdf?fileId=5546d462533600a40153561f26be1ef3 Description: MOSFET N-CH 75V 68A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 41A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS4321TRL7PP IRFS4321TRL7PP Infineon Technologies IRSDS18683-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 86A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 Infineon Technologies Infineon-IPB017N08N5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd9e5e0620c Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 Infineon Technologies Infineon-IPB017N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4a981111eed Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.74 EUR
Mindestbestellmenge: 1000
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 Infineon Technologies Infineon-IPB027N10N5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014adf44f3dd7c86 Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.99 EUR
Mindestbestellmenge: 1000
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IPT015N10N5ATMA1 IPT015N10N5ATMA1 Infineon Technologies Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 22580 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.94 EUR
Mindestbestellmenge: 2000
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TLE7257LEXUMA1 TLE7257LEXUMA1 Infineon Technologies Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 500 mV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7257SJXUMA1 TLE7257SJXUMA1 Infineon Technologies Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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TLE7258DXUMA1 TLE7258DXUMA1 Infineon Technologies Infineon-TLE7258D-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a3d11d2955e83 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLE7258LEXUMA1 TLE7258LEXUMA1 Infineon Technologies Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258SJXUMA1 Infineon Technologies Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.64 EUR
5000+0.62 EUR
7500+0.61 EUR
Mindestbestellmenge: 2500
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TLE72593GEXUMA1 TLE72593GEXUMA1 Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
Produkt ist nicht verfügbar
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TLE72593LEXUMA1 TLE72593LEXUMA1 Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 Infineon Technologies Infineon-IPB017N08N5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd9e5e0620c Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.24 EUR
10+6.91 EUR
100+5.08 EUR
Mindestbestellmenge: 2
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 Infineon Technologies Infineon-IPB017N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4a981111eed Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.49 EUR
10+6.36 EUR
100+4.59 EUR
500+4.58 EUR
Mindestbestellmenge: 2
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IPT015N10N5ATMA1 IPT015N10N5ATMA1 Infineon Technologies Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 23412 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.88 EUR
10+5.24 EUR
100+3.75 EUR
500+3.6 EUR
Mindestbestellmenge: 3
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TLE7257LEXUMA1 TLE7257LEXUMA1 Infineon Technologies Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 500 mV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7257SJXUMA1 TLE7257SJXUMA1 Infineon Technologies Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 1707 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
19+0.95 EUR
25+0.86 EUR
100+0.75 EUR
250+0.7 EUR
500+0.67 EUR
1000+0.65 EUR
Mindestbestellmenge: 14
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TLE7258DXUMA1 TLE7258DXUMA1 Infineon Technologies Infineon-TLE7258D-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a3d11d2955e83 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Last Time Buy
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
10+2.36 EUR
25+2.15 EUR
100+1.92 EUR
250+1.81 EUR
500+1.75 EUR
1000+1.69 EUR
2500+1.64 EUR
Mindestbestellmenge: 6
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TLE7258LEXUMA1 TLE7258LEXUMA1 Infineon Technologies Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258SJXUMA1 Infineon Technologies Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 11896 Stücke:
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19+0.97 EUR
25+0.87 EUR
100+0.77 EUR
250+0.72 EUR
500+0.69 EUR
1000+0.66 EUR
Mindestbestellmenge: 13
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TLE72593GEXUMA1 TLE72593GEXUMA1 Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
Produkt ist nicht verfügbar
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TLE72593LEXUMA1 TLE72593LEXUMA1 Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 2793 Stücke:
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25+1.42 EUR
100+1.26 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.1 EUR
2500+1.06 EUR
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IPD110N12N3GATMA1 IPD110N12N3GATMA1 Infineon Technologies dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
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IPD110N12N3GATMA1 IPD110N12N3GATMA1 Infineon Technologies dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
auf Bestellung 7897 Stücke:
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10+2.56 EUR
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BGS12SN6E6327XTSA1 BGS12SN6E6327XTSA1 Infineon Technologies Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Description: IC RF SWITCH SPDT 6GHZ TSNP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, WLAN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.5V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 21dB
Supplier Device Package: PG-TSNP-6-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 Infineon Technologies Infineon-ICE1HS01G_1-DS-v02_00-en.pdf?fileId=db3a3043382e837301383116a3354a93 Description: IC OFFLINE SW HALF-BRIDGE 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 50kHz ~ 609kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 12 V
Control Features: Frequency Control
Part Status: Active
Produkt ist nicht verfügbar
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BGT60EESKITTOBO1 Infineon Technologies BGT60_PB.pdf?fileId=db3a30433de4e67f013df36a708267ac Description: RF DEVELOPMENT KIT
Produkt ist nicht verfügbar
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TLE4205GXUMA1 TLE4205GXUMA1 Infineon Technologies Infineon-TLE4205-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4393a186d4a&ack=t Description: IC MOTOR DRIVER 6V-32V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20-17
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
Produkt ist nicht verfügbar
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IRFP4127PBF IRFP4127PBF Infineon Technologies irfp4127pbf.pdf?fileId=5546d462533600a40153562917a42000 Description: MOSFET N-CH 200V 75A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 44A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Produkt ist nicht verfügbar
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IRF40R207 IRF40R207 Infineon Technologies irf40r207.pdf?fileId=5546d462533600a4015355e308f41975 Description: MOSFET N-CH 40V 56A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 55A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
auf Bestellung 6000 Stücke:
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2000+0.48 EUR
4000+0.44 EUR
6000+0.42 EUR
Mindestbestellmenge: 2000
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IRSM515-015PA irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
IRSM515-015PA
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23SOP
auf Bestellung 238 Stücke:
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1+20.19 EUR
10+18.23 EUR
25+17.38 EUR
100+15.09 EUR
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IRSM515-035DA2 irsm505-035.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
Produkt ist nicht verfügbar
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IRSM515-044DA2 IRSM505-044_IRSM515-044_Series.pdf
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
Produkt ist nicht verfügbar
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CY14B116L-ZS25XI download
CY14B116L-ZS25XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
auf Bestellung 265 Stücke:
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Anzahl Preis
1+147.77 EUR
10+131.1 EUR
25+125 EUR
40+121.97 EUR
135+114.46 EUR
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CY14B116N-Z30XI download
CY14B116N-Z30XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B116N-ZSP25XI download
CY14B116N-ZSP25XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 164 Stücke:
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Anzahl Preis
1+160.6 EUR
10+147.98 EUR
25+143.08 EUR
50+141.57 EUR
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CY14B116N-ZSP45XI download
CY14B116N-ZSP45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B116S-BZ25XI download
CY14B116S-BZ25XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14V116N-BZ30XI Infineon-CY14V116N_16-Mbit_(1024K_X_16)_nvSRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0aeea354b
CY14V116N-BZ30XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 165-FBGA (15x17)
Write Cycle Time - Word, Page: 30ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 73 Stücke:
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Anzahl Preis
1+128.52 EUR
10+115.69 EUR
25+113.16 EUR
40+110.77 EUR
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CY8C4014PVI-412 Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4014PVI-412
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+4.05 EUR
25+3.82 EUR
100+3.26 EUR
250+3.06 EUR
500+2.68 EUR
1000+2.22 EUR
Mindestbestellmenge: 4
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CY8C4125AXI-473 Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AXI-473
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
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Anzahl Preis
4+5.46 EUR
10+4.1 EUR
25+3.77 EUR
Mindestbestellmenge: 4
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CY8C4245AXI-473 Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4245AXI-473
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 1148 Stücke:
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Anzahl Preis
3+7.09 EUR
10+5.37 EUR
25+4.94 EUR
160+4.34 EUR
320+4.19 EUR
480+4.11 EUR
960+4 EUR
Mindestbestellmenge: 3
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CY8C5888AXI-LP096 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5888AXI-LP096
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 621 Stücke:
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Anzahl Preis
1+45.02 EUR
10+36.4 EUR
90+32.03 EUR
180+31.12 EUR
270+30.67 EUR
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CYUSB2014-BZXC download
CYUSB2014-BZXC
Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.96 EUR
10+30.41 EUR
25+28.53 EUR
168+25.87 EUR
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CYUSB3064-BZXC Infineon-CYUSB306X_EZ-USB_CX3_MIPI_CSI-2_TO_SUPERSPEED_USB_BRIDGE_CONTROLLER-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbbb354559&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CYUSB3064-BZXC
Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.86 EUR
10+30.44 EUR
25+28.58 EUR
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CYUSB3064-BZXI Infineon-CYUSB306X_EZ-USB_CX3_MIPI_CSI-2_TO_SUPERSPEED_USB_BRIDGE_CONTROLLER-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbbb354559&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CYUSB3064-BZXI
Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Number of I/O: 12
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB3065-BZXC Infineon-CYUSB306X_EZ-USB_CX3_MIPI_CSI-2_TO_SUPERSPEED_USB_BRIDGE_CONTROLLER-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbbb354559&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CYUSB3065-BZXC
Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE 4LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 1089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.1 EUR
10+33.13 EUR
25+31.14 EUR
240+27.95 EUR
480+27.31 EUR
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
30+3.78 EUR
120+3.12 EUR
Mindestbestellmenge: 3
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IKW30N65NL5XKSA1 IKW30N65NL5.pdf
IKW30N65NL5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 59ns/283ns
Switching Energy: 560µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 23Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Produkt ist nicht verfügbar
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IKZ75N65NH5XKSA1 IKZ75N65NH5.pdf
IKZ75N65NH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ50N65NH5XKSA1 IKZ50N65NH5.pdf
IKZ50N65NH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 50A CO-PACK TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGZ100N65H5XKSA1 Infineon-IGZ100N65H5-DS-v02_01-EN.pdf?fileId=5546d4624933b875014979f66db81f51
IGZ100N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGZ75N65H5XKSA1 Infineon-IGZ75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624933b875014979ffa7531f5b
IGZ75N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGZ50N65H5XKSA1 Infineon-IGZ50N65H5-DS-v02_01-EN.pdf?fileId=5546d4624933b875014979f674161f53
IGZ50N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.86 EUR
30+5.58 EUR
120+4.64 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
HFA08TB60PBF hfa08tb60pbf.pdf?fileId=5546d462533600a4015355bfd7ed15d5
HFA08TB60PBF
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA15PB60PBF hfa15pb60pbf.pdf?fileId=5546d462533600a4015355bfe01115d7
HFA15PB60PBF
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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HFA15TB60PBF hfa15tb60pbf.pdf?fileId=5546d462533600a4015355bfe89215d9
HFA15TB60PBF
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
IRF7480MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 217A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V
auf Bestellung 10495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.09 EUR
100+2.14 EUR
500+1.81 EUR
Mindestbestellmenge: 4
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IRFH7191TRPBF IRFH7191PbF.pdf
IRFH7191TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH7787TRPBF irfh7787pbf.pdf?fileId=5546d462533600a40153561f26be1ef3
IRFH7787TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 68A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 41A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS4321TRL7PP IRSDS18683-1.pdf?t.download=true&u=5oefqw
IRFS4321TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 86A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 Infineon-IPB017N08N5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd9e5e0620c
IPB017N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 Infineon-IPB017N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4a981111eed
IPB017N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.74 EUR
Mindestbestellmenge: 1000
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IPB027N10N5ATMA1 Infineon-IPB027N10N5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014adf44f3dd7c86
IPB027N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.99 EUR
Mindestbestellmenge: 1000
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IPT015N10N5ATMA1 Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff
IPT015N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 22580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.94 EUR
Mindestbestellmenge: 2000
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TLE7257LEXUMA1 Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d
TLE7257LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 500 mV
Part Status: Active
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d
TLE7257SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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TLE7258DXUMA1 Infineon-TLE7258D-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a3d11d2955e83
TLE7258DXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7258LEXUMA1 Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b
TLE7258LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b
TLE7258SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
5000+0.62 EUR
7500+0.61 EUR
Mindestbestellmenge: 2500
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TLE72593GEXUMA1 Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE72593GEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE72593LEXUMA1 Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE72593LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 Infineon-IPB017N08N5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd9e5e0620c
IPB017N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.24 EUR
10+6.91 EUR
100+5.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N10N5ATMA1 Infineon-IPB017N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac4a981111eed
IPB017N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.49 EUR
10+6.36 EUR
100+4.59 EUR
500+4.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 Infineon-IPT015N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac94680661aff
IPT015N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 23412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+5.24 EUR
100+3.75 EUR
500+3.6 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE7257LEXUMA1 Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d
TLE7257LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 500 mV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7257SJXUMA1 Infineon-TLE7257-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d00335b5e7d
TLE7257SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 1707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
19+0.95 EUR
25+0.86 EUR
100+0.75 EUR
250+0.7 EUR
500+0.67 EUR
1000+0.65 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TLE7258DXUMA1 Infineon-TLE7258D-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a3d11d2955e83
TLE7258DXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Last Time Buy
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.36 EUR
25+2.15 EUR
100+1.92 EUR
250+1.81 EUR
500+1.75 EUR
1000+1.69 EUR
2500+1.64 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TLE7258LEXUMA1 Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b
TLE7258LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7258SJXUMA1 Infineon-TLE7258-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cff8dd85e6b
TLE7258SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 11896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.97 EUR
25+0.87 EUR
100+0.77 EUR
250+0.72 EUR
500+0.69 EUR
1000+0.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TLE72593GEXUMA1 Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE72593GEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE72593LEXUMA1 Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE72593LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 2793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.1 EUR
2500+1.06 EUR
Mindestbestellmenge: 9
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IPD110N12N3GATMA1 dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d
IPD110N12N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD110N12N3GATMA1 dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d
IPD110N12N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 83µA (Typ)
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
auf Bestellung 7897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.98 EUR
10+2.56 EUR
100+1.76 EUR
500+1.42 EUR
Mindestbestellmenge: 5
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
BGS12SN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, WLAN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.5V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 21dB
Supplier Device Package: PG-TSNP-6-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 Infineon-ICE1HS01G_1-DS-v02_00-en.pdf?fileId=db3a3043382e837301383116a3354a93
ICE1HS01G1XUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW HALF-BRIDGE 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 50kHz ~ 609kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10.2V ~ 18V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Voltage - Start Up: 12 V
Control Features: Frequency Control
Part Status: Active
Produkt ist nicht verfügbar
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BGT60EESKITTOBO1 BGT60_PB.pdf?fileId=db3a30433de4e67f013df36a708267ac
Hersteller: Infineon Technologies
Description: RF DEVELOPMENT KIT
Produkt ist nicht verfügbar
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TLE4205GXUMA1 Infineon-TLE4205-DS-v01_01-en.pdf?fileId=db3a304412b407950112b4393a186d4a&ack=t
TLE4205GXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-32V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20-17
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Grade: Automotive
Produkt ist nicht verfügbar
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IRFP4127PBF irfp4127pbf.pdf?fileId=5546d462533600a40153562917a42000
IRFP4127PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 75A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 44A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Produkt ist nicht verfügbar
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IRF40R207 irf40r207.pdf?fileId=5546d462533600a4015355e308f41975
IRF40R207
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 55A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.48 EUR
4000+0.44 EUR
6000+0.42 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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