Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124660) > Seite 219 nach 2078
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IRF7171MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 15A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFH7191TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 15A/80A PQFNRds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PQFN (5x6) Vgs(th) (Max) @ Id: 3.6V @ 100µA Power Dissipation (Max): 3.6W (Ta), 104W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFI7446GPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO220AB FPInput Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 3.9V @ 100µA Power Dissipation (Max): 40.5W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRGP4760D-EPBF | Infineon Technologies |
Description: IGBT 650V 90A TO-247ADPower - Max: 325 W Current - Collector Pulsed (Icm): 144 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 90 A Gate Charge: 145 nC Test Condition: 400V, 48A, 10Ohm, 15V Switching Energy: 1.7mJ (on), 1mJ (off) Td (on/off) @ 25°C: 70ns/140ns Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Reverse Recovery Time (trr): 170 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRGS4715DTRLPBF | Infineon Technologies |
Description: IGBT 650V D2-PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRGS4715DTRRPBF | Infineon Technologies |
Description: IGBT 650V D2-PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRPLHID2A | Infineon Technologies |
Description: EVAL BOARD FOR IRS2573DSecondary Attributes: Short-Circuit Protection Contents: Board(s) Part Status: Active Embedded: No Supplied Contents: Board(s) Utilized IC / Part: IRS2573D Type: Opto/Lighting Function: Ballast Control Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRSM505-015DA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1.2A 23DIPVoltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 23-DIP Module Features: Bootstrap Circuit Packaging: Tube Part Status: Discontinued at Digi-Key Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIP Voltage - Load: 400V (Max) Technology: UMOS Current - Peak Output: 9A Current - Output / Channel: 1.2A Applications: AC Motors Rds On (Typ): 5Ohm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRSM505-015DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1.2A 23DIPPackaging: Tube Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIPA Voltage - Load: 400V (Max) Technology: UMOS Current - Peak Output: 9A Current - Output / Channel: 1.2A Applications: AC Motors Rds On (Typ): 5Ohm Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 23-DIP Module Features: Bootstrap Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRSM505-015PA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1.2A 23SOPOutput Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 23-PowerSMD Module Features: Bootstrap Circuit Packaging: Tube Part Status: Obsolete Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-SOP Voltage - Load: 400V (Max) Technology: UMOS Current - Peak Output: 9A Current - Output / Channel: 1.2A Applications: AC Motors Rds On (Typ): 5Ohm Voltage - Supply: 13.5V ~ 16.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRSM505-084DA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4.6A 23DIPLoad Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIP Voltage - Load: 200V (Max) Technology: UMOS Current - Peak Output: 15A Current - Output / Channel: 4.6A Applications: AC Motors Rds On (Typ): 340mOhm Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 23-DIP Module Features: Bootstrap Circuit Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRSM505-084DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4.6A 23DIPPart Status: Obsolete Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIPA Voltage - Load: 200V (Max) Technology: UMOS Current - Peak Output: 15A Current - Output / Channel: 4.6A Applications: AC Motors Rds On (Typ): 340mOhm Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 23-DIP Module Features: Bootstrap Circuit Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRSM505-084PA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4.6A 23SOPPart Status: Obsolete Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-SOP Voltage - Load: 200V (Max) Technology: UMOS Current - Peak Output: 15A Current - Output / Channel: 4.6A Applications: AC Motors Rds On (Typ): 340mOhm Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 23-PowerSMD Module Features: Bootstrap Circuit Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRSM515-015PA | Infineon Technologies |
Description: IC MOTOR DRIVER 600V 23SOP |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRSM515-035DA2 | Infineon Technologies |
Description: IC MOTOR DRIVER 600V 23DIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IRSM515-044DA2 | Infineon Technologies |
Description: IC MOTOR DRIVER 600V 23DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY14B116L-ZS25XI | Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 44TSOP IIPackage / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 2M x 8 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 44-TSOP II Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B116N-Z30XI | Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 48TSOP IDigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 30 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 30ns Part Status: Active Supplier Device Package: 48-TSOP I Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY14B116N-ZSP25XI | Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 54TSOP IIDigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 54-TSOP II Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Packaging: Tray |
auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B116N-ZSP45XI | Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 54TSOP IIDigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 54-TSOP II Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1080 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY14B116S-BZ25XI | Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 165FBGAWrite Cycle Time - Word, Page: 25ns Supplier Device Package: 165-FBGA (15x17) Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 512K x 32 Access Time: 25 ns Memory Interface: Parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 105 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY14V116N-BZ30XI | Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 165FBGAMounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 30 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 30ns Supplier Device Package: 165-FBGA (15x17) Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 1.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit |
auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4014PVI-412 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28SSOPCore Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Packaging: Tube DigiKey Programmable: Not Verified Number of I/O: 20 Part Status: Active Supplier Device Package: 28-SSOP Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I²C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: D/A 1x7b, 1x8b |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4125AXI-473 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 44TQFPPackaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4245AXI-473 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 44TQFPPackaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 1148 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C5888AXI-LP096 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 2x12b; D/A 4x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
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CYUSB2014-BZXC | Infineon Technologies |
Description: IC EZ-USB BRIDGE FX3 3.0 121BGAPackaging: Tray Package / Case: 121-TFBGA Mounting Type: Surface Mount Interface: I2C, I2S, MMC/SD, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: SuperSpeed USB Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-FBGA (10x10) Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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CYUSB3064-BZXC | Infineon Technologies |
Description: IC EZ-USB BRIDGE 2LANE 121BGAPackaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Interface: GPIF, I2C, I2S, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: USB Host/Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-BGA (10x10) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
auf Bestellung 1106 Stücke: Lieferzeit 10-14 Tag (e) |
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CYUSB3064-BZXI | Infineon Technologies |
Description: IC EZ-USB BRIDGE 2LANE 121BGAPackaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Interface: GPIF, I2C, I2S, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: USB Host/Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-BGA (10x10) Number of I/O: 12 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYUSB3065-BZXC | Infineon Technologies |
Description: IC EZ-USB BRIDGE 4LANE 121BGAPackaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Interface: GPIF, I2C, I2S, SPI, UART, USB RAM Size: 512K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.15V ~ 1.25V Controller Series: CYUSB Program Memory Type: External Program Memory Applications: USB Host/Peripheral Controller Core Processor: ARM9® Supplier Device Package: 121-BGA (10x10) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
auf Bestellung 2382 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N65L5XKSA1 | Infineon Technologies |
Description: IGBT 650V 85A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 33ns/308ns Switching Energy: 470µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65NL5XKSA1 | Infineon Technologies |
Description: IGBT 650V 85A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 59ns/283ns Switching Energy: 560µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 23Ohm, 15V Gate Charge: 168 nC Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKZ75N65NH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 90A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 52ns/412ns Switching Energy: 880µJ (on), 520µJ (off) Test Condition: 400V, 37.5A, 27Ohm, 15V Gate Charge: 166 nC Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
Produkt ist nicht verfügbar |
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IKZ50N65NH5XKSA1 | Infineon Technologies |
Description: IGBT 650V 50A CO-PACK TO-247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 22ns/252ns Switching Energy: 350µJ (on), 200µJ (off) Test Condition: 400V, 25A, 15Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGZ100N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 161A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 30ns/421ns Switching Energy: 850µJ (on), 770µJ (off) Test Condition: 400V, 50A, 8Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 161 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 536 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGZ75N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 119A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 26ns/347ns Switching Energy: 680µJ (on), 430µJ (off) Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 119 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGZ50N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 85A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/250ns Switching Energy: 410µJ (on), 190µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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HFA08TB60PBF | Infineon Technologies |
Description: DIODE STANDARD 600V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HFA15PB60PBF | Infineon Technologies |
Description: DIODE STANDARD 600V 15A TO247ACPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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HFA15TB60PBF | Infineon Technologies |
Description: DIODE STANDARD 600V 15A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF7480MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 217A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 217A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DirectFET™ Isometric ME Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V |
auf Bestellung 23402 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7191TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 15A/80A PQFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PQFN (5x6) Vgs(th) (Max) @ Id: 3.6V @ 100µA Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS4321TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 150V 86A D2PAK-7Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB017N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB017N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 180A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.8V @ 279µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 120A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 184µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT015N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 300A 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7257LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Part Status: Active Receiver Hysteresis: 500 mV Supplier Device Package: PG-TSON-8-1 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE7257SJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5.5V ~ 18V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LINbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 120 mV Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE7258DXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Last Time Buy Receiver Hysteresis: 120 mV Supplier Device Package: PG-TSON-8-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE7258LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Part Status: Active Receiver Hysteresis: 120 mV Supplier Device Package: PG-TSON-8-1 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE7258SJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Part Status: Active Receiver Hysteresis: 120 mV Supplier Device Package: PG-DSO-8 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE72593GEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO816Receiver Hysteresis: 120 mV Supplier Device Package: PG-DSO-8-16 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 27V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE72593LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5.5V ~ 27V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LINbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 120 mV Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB017N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.8V @ 280µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB017N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 180A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.8V @ 279µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
auf Bestellung 18174 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT015N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 300A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
auf Bestellung 16381 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7257LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Part Status: Active Receiver Hysteresis: 500 mV Supplier Device Package: PG-TSON-8-1 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE7257SJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5.5V ~ 18V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LINbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 120 mV Part Status: Active |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7258DXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Part Status: Last Time Buy Receiver Hysteresis: 120 mV Supplier Device Package: PG-TSON-8-1 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3875 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF7171MTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7191TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Description: MOSFET N-CH 100V 15A/80A PQFN
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFI7446GPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 40V 80A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGP4760D-EPBF |
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Hersteller: Infineon Technologies
Description: IGBT 650V 90A TO-247AD
Power - Max: 325 W
Current - Collector Pulsed (Icm): 144 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 145 nC
Test Condition: 400V, 48A, 10Ohm, 15V
Switching Energy: 1.7mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 70ns/140ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Reverse Recovery Time (trr): 170 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 90A TO-247AD
Power - Max: 325 W
Current - Collector Pulsed (Icm): 144 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 145 nC
Test Condition: 400V, 48A, 10Ohm, 15V
Switching Energy: 1.7mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 70ns/140ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Reverse Recovery Time (trr): 170 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGS4715DTRLPBF |
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Hersteller: Infineon Technologies
Description: IGBT 650V D2-PAK
Description: IGBT 650V D2-PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGS4715DTRRPBF |
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Hersteller: Infineon Technologies
Description: IGBT 650V D2-PAK
Description: IGBT 650V D2-PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IRPLHID2A |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS2573D
Secondary Attributes: Short-Circuit Protection
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: IRS2573D
Type: Opto/Lighting
Function: Ballast Control
Packaging: Box
Description: EVAL BOARD FOR IRS2573D
Secondary Attributes: Short-Circuit Protection
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: IRS2573D
Type: Opto/Lighting
Function: Ballast Control
Packaging: Box
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| IRSM505-015DA |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 9A
Current - Output / Channel: 1.2A
Applications: AC Motors
Rds On (Typ): 5Ohm
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 9A
Current - Output / Channel: 1.2A
Applications: AC Motors
Rds On (Typ): 5Ohm
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| IRSM505-015DA2 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 9A
Current - Output / Channel: 1.2A
Applications: AC Motors
Rds On (Typ): 5Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 9A
Current - Output / Channel: 1.2A
Applications: AC Motors
Rds On (Typ): 5Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
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| IRSM505-015PA |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-SOP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 9A
Current - Output / Channel: 1.2A
Applications: AC Motors
Rds On (Typ): 5Ohm
Voltage - Supply: 13.5V ~ 16.5V
Description: IC HALF BRIDGE DRIVER 1.2A 23SOP
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-SOP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 9A
Current - Output / Channel: 1.2A
Applications: AC Motors
Rds On (Typ): 5Ohm
Voltage - Supply: 13.5V ~ 16.5V
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| IRSM505-084DA |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Obsolete
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| IRSM505-084DA2 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Tube
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Tube
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| IRSM505-084PA |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23SOP
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-SOP
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Description: IC HALF BRIDGE DRIVER 4.6A 23SOP
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-SOP
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
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| IRSM515-015PA |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23SOP
Description: IC MOTOR DRIVER 600V 23SOP
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.03 EUR |
| 10+ | 21.69 EUR |
| 25+ | 20.68 EUR |
| 100+ | 17.96 EUR |
| IRSM515-035DA2 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
Description: IC MOTOR DRIVER 600V 23DIP
Produkt ist nicht verfügbar
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| IRSM515-044DA2 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 600V 23DIP
Description: IC MOTOR DRIVER 600V 23DIP
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| CY14B116L-ZS25XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 44TSOP II
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Description: IC NVSRAM 16MBIT PAR 44TSOP II
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 175.85 EUR |
| 10+ | 156.01 EUR |
| 25+ | 148.75 EUR |
| 40+ | 145.14 EUR |
| 135+ | 136.21 EUR |
| CY14B116N-Z30XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 30ns
Part Status: Active
Supplier Device Package: 48-TSOP I
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Description: IC NVSRAM 16MBIT PAR 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 30ns
Part Status: Active
Supplier Device Package: 48-TSOP I
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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| CY14B116N-ZSP25XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 54-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Description: IC NVSRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 54-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 191.11 EUR |
| 10+ | 176.1 EUR |
| 25+ | 170.27 EUR |
| 50+ | 168.47 EUR |
| CY14B116N-ZSP45XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 54-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Description: IC NVSRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 54-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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| CY14B116S-BZ25XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 165-FBGA (15x17)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 32
Access Time: 25 ns
Memory Interface: Parallel
Description: IC NVSRAM 16MBIT PAR 165FBGA
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 165-FBGA (15x17)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 32
Access Time: 25 ns
Memory Interface: Parallel
Produkt ist nicht verfügbar
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| CY14V116N-BZ30XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 30ns
Supplier Device Package: 165-FBGA (15x17)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Description: IC NVSRAM 16MBIT PAR 165FBGA
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 30 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 30ns
Supplier Device Package: 165-FBGA (15x17)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 152.94 EUR |
| 10+ | 137.67 EUR |
| 25+ | 134.66 EUR |
| 40+ | 131.82 EUR |
| CY8C4014PVI-412 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 20
Part Status: Active
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 20
Part Status: Active
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.37 EUR |
| 10+ | 4.82 EUR |
| 25+ | 4.55 EUR |
| 100+ | 3.88 EUR |
| 250+ | 3.64 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.64 EUR |
| CY8C4125AXI-473 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.5 EUR |
| 10+ | 4.88 EUR |
| 25+ | 4.49 EUR |
| CY8C4245AXI-473 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.44 EUR |
| 10+ | 6.39 EUR |
| 25+ | 5.88 EUR |
| 160+ | 5.16 EUR |
| 320+ | 4.99 EUR |
| 480+ | 4.89 EUR |
| 960+ | 4.76 EUR |
| CY8C5888AXI-LP096 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 66.94 EUR |
| 10+ | 54.16 EUR |
| CYUSB2014-BZXC |
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Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.17 EUR |
| 10+ | 36.19 EUR |
| 25+ | 33.95 EUR |
| 168+ | 30.79 EUR |
| CYUSB3064-BZXC |
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Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 59.04 EUR |
| 10+ | 47.58 EUR |
| 25+ | 44.71 EUR |
| 240+ | 40.13 EUR |
| CYUSB3064-BZXI |
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Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE 2LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Number of I/O: 12
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB3065-BZXC |
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Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE 4LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC EZ-USB BRIDGE 4LANE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: USB Host/Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-BGA (10x10)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 2382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.22 EUR |
| 10+ | 40.5 EUR |
| 25+ | 38.06 EUR |
| 240+ | 34.16 EUR |
| 480+ | 33.38 EUR |
| IGW30N65L5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.6 EUR |
| 30+ | 4.77 EUR |
| 120+ | 3.93 EUR |
| IKW30N65NL5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 59ns/283ns
Switching Energy: 560µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 23Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 59ns/283ns
Switching Energy: 560µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 23Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZ75N65NH5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZ50N65NH5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 50A CO-PACK TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Description: IGBT 650V 50A CO-PACK TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGZ100N65H5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGZ75N65H5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 119A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/347ns
Switching Energy: 680µJ (on), 430µJ (off)
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 119 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGZ50N65H5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.73 EUR |
| 30+ | 6.64 EUR |
| 120+ | 5.52 EUR |
| HFA08TB60PBF |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HFA15PB60PBF |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HFA15TB60PBF |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7480MTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 217A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V
Description: MOSFET N-CH 40V 217A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 217A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 132A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 25 V
auf Bestellung 23402 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.15 EUR |
| 10+ | 4 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.18 EUR |
| IRFH7191TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 100V 15A/80A PQFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4321TRL7PP |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 86A D2PAK-7
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 150V 86A D2PAK-7
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB017N08N5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB017N10N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.16 EUR |
| 2000+ | 3.99 EUR |
| IPB027N10N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.92 EUR |
| 2000+ | 3.71 EUR |
| IPT015N10N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 4.52 EUR |
| TLE7257LEXUMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 500 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 500 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7257SJXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7258DXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Description: IC TRANSCEIVER 1/1 PGTSON81
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE7258LEXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Part Status: Active
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER 1/1 PGTSON81
Part Status: Active
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7258SJXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Part Status: Active
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-DSO-8
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Description: IC TRANSCEIVER 1/1 PGDSO8
Part Status: Active
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-DSO-8
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.76 EUR |
| 5000+ | 0.74 EUR |
| 7500+ | 0.73 EUR |
| TLE72593GEXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO816
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-DSO-8-16
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER 1/1 PGDSO816
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-DSO-8-16
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE72593LEXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 120 mV
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB017N08N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.19 EUR |
| 10+ | 8.22 EUR |
| 100+ | 6.05 EUR |
| IPB017N10N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 18174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.26 EUR |
| 10+ | 8.22 EUR |
| 100+ | 5.94 EUR |
| 500+ | 5.53 EUR |
| IPT015N10N5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 16381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.26 EUR |
| 10+ | 8.22 EUR |
| 100+ | 5.94 EUR |
| 500+ | 5.53 EUR |
| TLE7257LEXUMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 500 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 500 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
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Im Einkaufswagen
Stück im Wert von UAH
| TLE7257SJXUMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 120 mV
Part Status: Active
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 19+ | 1.11 EUR |
| 25+ | 0.99 EUR |
| TLE7258DXUMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Part Status: Last Time Buy
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER 1/1 PGTSON81
Part Status: Last Time Buy
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 2.81 EUR |
| 25+ | 2.56 EUR |
| 100+ | 2.28 EUR |
| 250+ | 2.15 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 2.01 EUR |
| 2500+ | 1.95 EUR |








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