Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128358) > Seite 212 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TLE4242GATMA3 | Infineon Technologies |
Description: IC LED DRV LIN PWM 500MA TO263-7Type: Linear Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 4V Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Part Status: Not For New Designs Voltage - Supply (Max): 42V Voltage - Supply (Min): 4.5V Dimming: PWM Supplier Device Package: PG-TO263-7-1 Internal Switch(s): Yes Current - Output / Channel: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRF7739L1TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 46A DIRECTFETCurrent - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric L8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DirectFET™ Isometric L8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V |
auf Bestellung 736 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRF7749L1TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 33A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
auf Bestellung 22090 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRF7769L1TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 20A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V |
auf Bestellung 14517 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
AUIPS2041LTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
CY7C1612KV18-360BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGADigiKey Programmable: Not Verified Memory Organization: 8M x 18 Memory Interface: Parallel Supplier Device Package: 165-FBGA (15x17) Memory Format: SRAM Clock Frequency: 360 MHz Technology: SRAM - Synchronous, QDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 144Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 525 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
CY8C4124AXI-443 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 44TQFPDigiKey Programmable: Not Verified Number of I/O: 36 Part Status: Active Supplier Device Package: 44-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 16KB (16K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 44-LQFP Packaging: Tray |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
CY8C4014LQI-SLT2 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 24SQFNVoltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core DigiKey Programmable: Not Verified Number of I/O: 20 Supplier Device Package: 24-QFN (4x4) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I²C Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFH7085TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 100A PQFNCurrent - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: PQFN (5x6) Vgs(th) (Max) @ Id: 3.7V @ 150µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFR7540TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 90A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRFR7540PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 90A DPAKInput Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFH7545TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 85A PQFNInput Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PQFN (5x6) Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFR7546TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 56A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFR7546PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 56A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 99W (Tc) Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFH7085TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 100A PQFNInput Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: PQFN (5x6) Vgs(th) (Max) @ Id: 3.7V @ 150µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRFR7540TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 90A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
auf Bestellung 6738 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRFH7545TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 85A PQFNInput Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PQFN (5x6) Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3498 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRFR7546TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 56A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V |
auf Bestellung 689 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IRS29831PBF | Infineon Technologies |
Description: IC LED DRV OFFL TRIAC 650MA 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 100°C (TJ) Current - Output / Channel: 650mA Internal Switch(s): Yes Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-PDIP Dimming: Triac Voltage - Supply (Min): 11.5V Voltage - Supply (Max): 18V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
SPP16N50C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 16A TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 675µA Supplier Device Package: PG-TO220-3-111 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFS7430PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFS7434PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFS7430TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V |
auf Bestellung 4615 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRFS7434TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
auf Bestellung 14115 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
BCR320U HW LED BOARD | Infineon Technologies |
Description: BOARD LED BCR320U HWPackaging: Box Voltage - Input: 24V Current - Output / Channel: 150mA Utilized IC / Part: BCR320U Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BCR402W 12V LED BOARD | Infineon Technologies |
Description: BOARD LED BCR402W 12VPackaging: Box Voltage - Input: 12V Current - Output / Channel: 20mA Utilized IC / Part: BCR402W Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BCR402W 24V LED BOARD | Infineon Technologies |
Description: BOARD LED BCR402W 24VPackaging: Box Voltage - Input: 24V Current - Output / Channel: 20mA Utilized IC / Part: BCR402W Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
BCR450 BOARD | Infineon Technologies |
Description: EVAL BOARD FOR BCR450Packaging: Box Contents: Board(s) Utilized IC / Part: BCR450 Supplied Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
EVALLED-ICL8002G-B1 | Infineon Technologies |
Description: EVAL BOARD FOR ICL8002GFeatures: Dimmable Packaging: Box Voltage - Output: 36V ~ 42V Voltage - Input: 196 ~ 265 VAC Contents: Board(s) Current - Output / Channel: 300mA Utilized IC / Part: ICL8002G Outputs and Type: 1 Isolated Output |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
EVALLED-ICL8002G-B2 | Infineon Technologies |
Description: BOARD EVAL ICL8002 DIM 12W LEDFeatures: Dimmable Packaging: Box Voltage - Output: 30V ~ 38V Voltage - Input: 90 ~ 132 VAC Current - Output / Channel: 300mA Utilized IC / Part: ICL8002G Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
EVALLED-ICL8002G-B3 | Infineon Technologies |
Description: BOARD EVAL ICL8002 DIM 20W LED |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
EVALLED-ILD6070 | Infineon Technologies |
Description: EVAL BOARD FOR ILD6070Features: Dimmable Packaging: Box Voltage - Input: 4.5V ~ 60V Contents: Board(s) Current - Output / Channel: 500mA Utilized IC / Part: ILD6070 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
VALLEDILD6150TOBO1 | Infineon Technologies |
Description: BOARD EVAL ILD6150 60V 1.5AFeatures: Dimmable Packaging: Box Voltage - Input: 4.5V ~ 60V Current - Output / Channel: 1.5A Utilized IC / Part: ILD6150 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ILD4035 24V BOARD | Infineon Technologies |
Description: BOARD EVAL ILD4035 24V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ILD4120 BOARD | Infineon Technologies |
Description: BOARD EVAL ILD4120 3WFeatures: Dimmable Packaging: Box Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 600mA Utilized IC / Part: ILD4120 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
KITXMC1XAKLED001TOBO1 | Infineon Technologies |
Description: LED LIGHTING APPL KIT XMC1200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
MR16 3W BOARD | Infineon Technologies |
Description: EVAL BOARD MR16 3W ILD4035Packaging: Box Voltage - Input: 12VAC Current - Output / Channel: 350mA Utilized IC / Part: ILD4035 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
ICL8002GXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DSOVoltage - Supply (Max): 26V Voltage - Supply (Min): 9.8V Dimming: PWM Supplier Device Package: PG-DSO-8-42 Topology: Flyback, Step-Down (Buck) Internal Switch(s): No Operating Temperature: -40°C ~ 150°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ILD6070XUMA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR PWM 700MA 8DSOVoltage - Supply (Max): 60V Voltage - Supply (Min): 4.5V Dimming: Analog, PWM Supplier Device Package: PG-DSO-8 Topology: Step-Down (Buck) Internal Switch(s): Yes Current - Output / Channel: 700mA Applications: Lighting Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Regulator Frequency: 1MHz Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ILD6150XUMA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR PWM 1.5A 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 1.5A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 60V Part Status: Active |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IPD80R2K8CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO252-3FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 3.9V @ 120µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IPD80R1K4CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 3.9A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 3.9V @ 240µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IPD80R1K0CEBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IPU80R1K4CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 3.9A TO251-3Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.9V @ 240µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IPU80R2K8CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO251-3Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.9V @ 120µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IPU80R1K0CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ICL8002GXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DSOVoltage - Supply (Max): 26V Voltage - Supply (Min): 9.8V Dimming: PWM Supplier Device Package: PG-DSO-8-42 Topology: Flyback, Step-Down (Buck) Internal Switch(s): No Operating Temperature: -40°C ~ 150°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ILD6070XUMA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR PWM 700MA 8DSOVoltage - Supply (Max): 60V Voltage - Supply (Min): 4.5V Dimming: Analog, PWM Supplier Device Package: PG-DSO-8 Topology: Step-Down (Buck) Internal Switch(s): Yes Current - Output / Channel: 700mA Applications: Lighting Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Regulator Frequency: 1MHz Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
ILD6150XUMA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR PWM 1.5A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 1.5A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 60V Part Status: Active |
auf Bestellung 33253 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BTS61101SJAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-DSO-8-27 Ratio - Input:Output: 1:1 Current - Output (Max): 20A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 9V ~ 16V Rds On (Typ): 80mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFH4226TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 30A/70A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRFH4226TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 30A/70A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
BCR401WH6327XTSA1 | Infineon Technologies |
Description: IC LED DRIVER LIN 60MA SOT343-4Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Voltage - Output: 18V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: Lighting Current - Output / Channel: 60mA Internal Switch(s): Yes Supplier Device Package: PG-SOT343-4-1 Voltage - Supply (Min): 1.2V Voltage - Supply (Max): 18V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6772 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
IRFR48ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
CY8C5888LTI-LP097 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x20b, 2x12b; D/A 4x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
CY8C4244LQI-443 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 40QFNPackaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
CY8C5288LTI-LP090 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 68QFNDigiKey Programmable: Not Verified Number of I/O: 38 Part Status: Active Supplier Device Package: 68-QFN (8x8) Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 1x12b; D/A 1x8b Core Processor: ARM® Cortex®-M3 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 64K x 8 Program Memory Size: 256KB (256K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Packaging: Tray |
auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
CY8C5488AXI-LP120 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100TQFPNumber of I/O: 62 DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 100-TQFP (14x14) Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 1x12b; D/A 2x8b Core Processor: ARM® Cortex®-M3 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 64K x 8 Program Memory Size: 256KB (256K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
S25FL116K0XBHI023 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 24BGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
S25FL116K0XBHI030 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Organization: 2M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 3ms Supplier Device Package: 24-BGA (6x8) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLE4242GATMA3 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 500MA TO263-7
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 4V
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Voltage - Supply (Max): 42V
Voltage - Supply (Min): 4.5V
Dimming: PWM
Supplier Device Package: PG-TO263-7-1
Internal Switch(s): Yes
Current - Output / Channel: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Grade: Automotive
Description: IC LED DRV LIN PWM 500MA TO263-7
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 4V
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Voltage - Supply (Max): 42V
Voltage - Supply (Min): 4.5V
Dimming: PWM
Supplier Device Package: PG-TO263-7-1
Internal Switch(s): Yes
Current - Output / Channel: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7739L1TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Description: MOSFET N-CH 40V 46A DIRECTFET
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.95 EUR |
| 10+ | 6.6 EUR |
| 50+ | 5.16 EUR |
| 100+ | 4.7 EUR |
| 500+ | 4.14 EUR |
| IRF7749L1TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
auf Bestellung 22090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.45 EUR |
| 10+ | 9.07 EUR |
| 50+ | 7.2 EUR |
| 100+ | 6.6 EUR |
| 500+ | 6.31 EUR |
| IRF7769L1TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 20A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Description: MOSFET N-CH 100V 20A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
auf Bestellung 14517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.78 EUR |
| 10+ | 8.59 EUR |
| 100+ | 6.22 EUR |
| 500+ | 5.85 EUR |
| AUIPS2041LTR |
![]() |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1612KV18-360BZXC |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 360 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 144MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 360 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 144Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 525 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4124AXI-443 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 44TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Active
Supplier Device Package: 44-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Packaging: Tray
Description: IC MCU 32BIT 16KB FLASH 44TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Active
Supplier Device Package: 44-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Packaging: Tray
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.73 EUR |
| 10+ | 8.73 EUR |
| 25+ | 8.26 EUR |
| CY8C4014LQI-SLT2 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
DigiKey Programmable: Not Verified
Number of I/O: 20
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
DigiKey Programmable: Not Verified
Number of I/O: 20
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7085TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A PQFN
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Description: MOSFET N-CH 60V 100A PQFN
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR7540TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.31 EUR |
| IRFR7540PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 60V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7545TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 85A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 85A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR7546TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR7546PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 99W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Description: MOSFET N-CH 60V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 99W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7085TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 10+ | 2.42 EUR |
| 50+ | 1.82 EUR |
| 100+ | 1.63 EUR |
| IRFR7540TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
auf Bestellung 6738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.41 EUR |
| 10+ | 2.83 EUR |
| 50+ | 2.15 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.55 EUR |
| IRFH7545TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 85A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 85A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 11+ | 2.05 EUR |
| 50+ | 1.54 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.07 EUR |
| IRFR7546TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
auf Bestellung 689 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.59 EUR |
| 13+ | 1.63 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.84 EUR |
| IRS29831PBF |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRV OFFL TRIAC 650MA 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 100°C (TJ)
Current - Output / Channel: 650mA
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-PDIP
Dimming: Triac
Voltage - Supply (Min): 11.5V
Voltage - Supply (Max): 18V
Description: IC LED DRV OFFL TRIAC 650MA 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 100°C (TJ)
Current - Output / Channel: 650mA
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-PDIP
Dimming: Triac
Voltage - Supply (Min): 11.5V
Voltage - Supply (Max): 18V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| SPP16N50C3XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 560V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7430PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7434PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7430TRL7PP |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.16 EUR |
| 10+ | 6.76 EUR |
| 50+ | 5.31 EUR |
| 100+ | 4.83 EUR |
| IRFS7434TRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
auf Bestellung 14115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.28 EUR |
| 10+ | 4.07 EUR |
| 50+ | 3.12 EUR |
| 100+ | 2.82 EUR |
| BCR320U HW LED BOARD |
![]() |
Hersteller: Infineon Technologies
Description: BOARD LED BCR320U HW
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 150mA
Utilized IC / Part: BCR320U
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD LED BCR320U HW
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 150mA
Utilized IC / Part: BCR320U
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.44 EUR |
| BCR402W 12V LED BOARD |
![]() |
Hersteller: Infineon Technologies
Description: BOARD LED BCR402W 12V
Packaging: Box
Voltage - Input: 12V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD LED BCR402W 12V
Packaging: Box
Voltage - Input: 12V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.58 EUR |
| BCR402W 24V LED BOARD |
![]() |
Hersteller: Infineon Technologies
Description: BOARD LED BCR402W 24V
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD LED BCR402W 24V
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.1 EUR |
| BCR450 BOARD |
![]() |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCR450
Packaging: Box
Contents: Board(s)
Utilized IC / Part: BCR450
Supplied Contents: Board(s)
Description: EVAL BOARD FOR BCR450
Packaging: Box
Contents: Board(s)
Utilized IC / Part: BCR450
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EVALLED-ICL8002G-B1 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL8002G
Features: Dimmable
Packaging: Box
Voltage - Output: 36V ~ 42V
Voltage - Input: 196 ~ 265 VAC
Contents: Board(s)
Current - Output / Channel: 300mA
Utilized IC / Part: ICL8002G
Outputs and Type: 1 Isolated Output
Description: EVAL BOARD FOR ICL8002G
Features: Dimmable
Packaging: Box
Voltage - Output: 36V ~ 42V
Voltage - Input: 196 ~ 265 VAC
Contents: Board(s)
Current - Output / Channel: 300mA
Utilized IC / Part: ICL8002G
Outputs and Type: 1 Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EVALLED-ICL8002G-B2 |
![]() |
Hersteller: Infineon Technologies
Description: BOARD EVAL ICL8002 DIM 12W LED
Features: Dimmable
Packaging: Box
Voltage - Output: 30V ~ 38V
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 300mA
Utilized IC / Part: ICL8002G
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL ICL8002 DIM 12W LED
Features: Dimmable
Packaging: Box
Voltage - Output: 30V ~ 38V
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 300mA
Utilized IC / Part: ICL8002G
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 290.01 EUR |
| EVALLED-ICL8002G-B3 |
![]() |
Hersteller: Infineon Technologies
Description: BOARD EVAL ICL8002 DIM 20W LED
Description: BOARD EVAL ICL8002 DIM 20W LED
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| EVALLED-ILD6070 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD6070
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Contents: Board(s)
Current - Output / Channel: 500mA
Utilized IC / Part: ILD6070
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR ILD6070
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Contents: Board(s)
Current - Output / Channel: 500mA
Utilized IC / Part: ILD6070
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VALLEDILD6150TOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: BOARD EVAL ILD6150 60V 1.5A
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD6150
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Description: BOARD EVAL ILD6150 60V 1.5A
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD6150
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ILD4035 24V BOARD |
![]() |
Hersteller: Infineon Technologies
Description: BOARD EVAL ILD4035 24V
Description: BOARD EVAL ILD4035 24V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| ILD4120 BOARD |
![]() |
Hersteller: Infineon Technologies
Description: BOARD EVAL ILD4120 3W
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 600mA
Utilized IC / Part: ILD4120
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: BOARD EVAL ILD4120 3W
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 600mA
Utilized IC / Part: ILD4120
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KITXMC1XAKLED001TOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: LED LIGHTING APPL KIT XMC1200
Description: LED LIGHTING APPL KIT XMC1200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MR16 3W BOARD |
![]() |
Hersteller: Infineon Technologies
Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 43.23 EUR |
| ICL8002GXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8-42
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8-42
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ILD6070XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Voltage - Supply (Max): 60V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-DSO-8
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 700mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Voltage - Supply (Max): 60V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-DSO-8
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 700mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ILD6150XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.38 EUR |
| 5000+ | 1.34 EUR |
| 7500+ | 1.33 EUR |
| 12500+ | 1.31 EUR |
| IPD80R2K8CEBTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Description: MOSFET N-CH 800V 1.9A TO252-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD80R1K4CEBTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 800V 3.9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD80R1K0CEBTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 800V 5.7A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU80R1K4CEBKMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 800V 3.9A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU80R2K8CEBKMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 800V 1.9A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU80R1K0CEBKMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICL8002GXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8-42
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8-42
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ILD6070XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Voltage - Supply (Max): 60V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-DSO-8
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 700mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Voltage - Supply (Max): 60V
Voltage - Supply (Min): 4.5V
Dimming: Analog, PWM
Supplier Device Package: PG-DSO-8
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 700mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Frequency: 1MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ILD6150XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 33253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 11+ | 2.02 EUR |
| 25+ | 1.84 EUR |
| 100+ | 1.63 EUR |
| 250+ | 1.54 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.46 EUR |
| BTS61101SJAXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8-27
Ratio - Input:Output: 1:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 9V ~ 16V
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8-27
Ratio - Input:Output: 1:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 9V ~ 16V
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH4226TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A/70A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Description: MOSFET N-CH 25V 30A/70A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH4226TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A/70A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Description: MOSFET N-CH 25V 30A/70A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCR401WH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC LED DRIVER LIN 60MA SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-4-1
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRIVER LIN 60MA SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Voltage - Output: 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT343-4-1
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 80+ | 0.26 EUR |
| 90+ | 0.24 EUR |
| 106+ | 0.2 EUR |
| 250+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| IRFR48ZTRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C5888LTI-LP097 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 55.92 EUR |
| 10+ | 45.05 EUR |
| 50+ | 40.7 EUR |
| 100+ | 39.34 EUR |
| CY8C4244LQI-443 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.51 EUR |
| 10+ | 6.47 EUR |
| 25+ | 5.96 EUR |
| 100+ | 5.4 EUR |
| 490+ | 4.97 EUR |
| CY8C5288LTI-LP090 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 1x12b; D/A 1x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 256KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 1x12b; D/A 1x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.8 EUR |
| 10+ | 19.55 EUR |
| 25+ | 18.24 EUR |
| 100+ | 16.79 EUR |
| CY8C5488AXI-LP120 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Number of I/O: 62
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x12b; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Number of I/O: 62
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x12b; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL116K0XBHI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL116K0XBHI030 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

































