Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129105) > Seite 2146 nach 2152
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| CYW54590RKUBGT | INFINEON TECHNOLOGIES |
Category: IoT (WiFi/Bluetooth) modules Description: IC: WIFi Network Controller Type of integrated circuit: WIFi Network Controller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CYW54591RKUBGT | INFINEON TECHNOLOGIES |
Category: IoT (WiFi/Bluetooth) modulesDescription: IC: WIFi Network Controller Type of integrated circuit: WIFi Network Controller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLE9351VSJXTMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN interface Type of integrated circuit: CAN interface |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPD350N06L G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 29A Power dissipation: 68W Case: DPAK3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement |
auf Bestellung 4650 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 114 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
IKP28N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 650V; 38A; 130W; TO220-3 Case: TO220-3 Power dissipation: 130W Technology: Field Stop; Trench Collector-emitter voltage: 650V Gate charge: 50nC Pulsed collector current: 90A Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 38A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
DD160N22K | INFINEON TECHNOLOGIES |
Category: Diode modulesDescription: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw Max. forward impulse current: 4.6kA Max. forward voltage: 1.4V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 160A Semiconductor structure: double series Case: BG-PB34-1 |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
TLD1120ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Case: PG-SSOP-14-EP Output current: 0.36A Number of channels: 1 Mounting: SMD Protection: overheating OTP Integrated circuit features: linear dimming; PWM Technology: Litix™ Operating voltage: 5.5...40V DC |
auf Bestellung 1859 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
ISO1H811GAUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC Type of integrated circuit: driver Kind of integrated circuit: high-side Case: PG-DSO-36 Output current: 0.625A Number of channels: 8 Supply voltage: 11...35V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Turn-on time: 64µs Turn-off time: 89µs On-state resistance: 0.15Ω Kind of output: N-Channel Power dissipation: 3.3W Integrated circuit features: 8bit interface; galvanically isolated Technology: ISOFACE™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
ISO1H816GAUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: driver; high-side; ISOFACE™; SPI; PG-DSO-36; 1.2A; Ch: 8; 3.3W Type of integrated circuit: driver Kind of integrated circuit: high-side Case: PG-DSO-36 Output current: 1.2A Number of channels: 8 Supply voltage: 3.3...5.5V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Turn-on time: 64µs Turn-off time: 89µs On-state resistance: 0.15Ω Kind of output: N-Channel Power dissipation: 3.3W Integrated circuit features: 8bit interface; galvanically isolated Technology: ISOFACE™ Interface: SPI |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
ISO1H801GAUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 15÷30VDC Type of integrated circuit: driver Kind of integrated circuit: high-side Case: PG-DSO-36 Output current: 0.625A Number of channels: 8 Supply voltage: 15...30V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Turn-on time: 64µs Turn-off time: 89µs On-state resistance: 0.15Ω Kind of output: N-Channel Power dissipation: 3.3W Integrated circuit features: 8bit interface; galvanically isolated Technology: ISOFACE™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1ED3491MC12MXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side; EiceDRIVER™; PG-DSO-16; 9A; Ch: 1; MOSFET Type of integrated circuit: driver Kind of integrated circuit: high-side Case: PG-DSO-16 Output current: 9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Power dissipation: 0.7W Integrated circuit features: MOSFET Technology: EiceDRIVER™ Pulse fall time: 15ns Insulation voltage: 5.7kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| T3710N04TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristorsDescription: Thyristor: hockey-puck; 400V; Ifmax: 7kA; 3.71kA; Igt: 250mA Body dimensions: Ø100/Ø65mm Mounting: Press-Pack Gate current: 250mA Max. off-state voltage: 0.4kV Load current: 3.71kA Max. load current: 7kA Kind of package: in-tray Type of thyristor: hockey-puck Max. forward impulse current: 70kA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLI5590A6WXTMA1 | INFINEON TECHNOLOGIES |
Category: Sensors and Transducers - UnclassifiedDescription: OUT: voltage Output configuration: voltage |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
IRFR48ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 44A; Idm: 250A; 91W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 44A Pulsed drain current: 250A Power dissipation: 91W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IPN95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 15nC Kind of package: reel Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IPD95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 52W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 15nC Kind of package: reel Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BGS12PN10E6327XTSA | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGS14PN10E6327XTSA | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGS14WMA9E6327XTSA | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGS15MU14E6327XTSA | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSA12GN10E6327XTS | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSA12UGL8E6327XTS | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSA143GL10E6327XT | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSA143ML10E6327XT | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSC2341ML10E6327X | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSX24MU16E6327XTS | INFINEON TECHNOLOGIES |
Category: RF modules Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGSX33M5U16E6327XT | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch Type of integrated circuit: RF switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
TD250N16KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Max. forward impulse current: 8kA Gate current: 200mA Max. forward voltage: 1.5V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 250A Max. load current: 410A Semiconductor structure: double series Case: BG-PB50-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
TD210N12KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V Max. forward impulse current: 6.6kA Gate current: 200mA Max. forward voltage: 1.65V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 210A Max. load current: 410A Semiconductor structure: double series Case: BG-PB50-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
TD250N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Max. forward impulse current: 8kA Gate current: 200mA Max. forward voltage: 1.5V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 250A Max. load current: 410A Semiconductor structure: double series Case: BG-PB50-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Max. forward impulse current: 7kA Gate current: 200mA Max. forward voltage: 1.8V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 215A Max. load current: 410A Semiconductor structure: double series Case: BG-PB50-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IDH06G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W Mounting: THT Max. forward voltage: 1.8V Power dissipation: 62W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Load current: 6A Kind of package: tube Semiconductor structure: single diode Leakage current: 1.2µA Case: PG-TO220-2 Type of diode: Schottky rectifying Max. forward impulse current: 54A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKW50N65EH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 200A Turn-on time: 54ns Turn-off time: 207ns Gate charge: 0.12µC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IKW50N65WR5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 150A Turn-on time: 79ns Turn-off time: 420ns Gate charge: 230nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IKW50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 47ns Turn-off time: 161ns Gate charge: 0.12µC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IKW50N65SS5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
AIKW50N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 Pulsed collector current: 150A Turn-on time: 33ns Turn-off time: 162ns Gate charge: 108nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPZA65R018CFD7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ICE5QR0680BGXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF3MR20KM1HHPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF3MR20KM1HPHPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF4MR20KM1HHPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF4MR20KM1HPHPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF5MR20KM1HHPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF5MR20KM1HPHPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DF419MR20W3M1HFB11BPSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Module: MOSFET transistor Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLE92104131QXXUMA1 | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2EDL23I06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-14 Output current: -2.5...1.8A Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BSZ146N10LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BTS5016-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 28mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS5014SDAAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 14mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BTS5016SDAAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BTS50202EKAXUMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BTS50901EJAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BTS50101EKBXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BTS50121EKBXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-DSO-14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14 On-state resistance: 12mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BTS5012SDAAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 12mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BTS50161EKBXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BTS50201EKAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6.5A; Ch: 1; N-Channel; SMD; SO14; 1.8W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 20mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Power dissipation: 1.8W Operating temperature: -40...150°C Integrated circuit features: thermal protection Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BTS50452EKAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14-40 EP On-state resistance: 85mΩ Supply voltage: 5...28V DC Power dissipation: 2W Operating temperature: -40...150°C Integrated circuit features: thermal protection Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CYW54590RKUBGT |
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: IC: WIFi Network Controller
Type of integrated circuit: WIFi Network Controller
Category: IoT (WiFi/Bluetooth) modules
Description: IC: WIFi Network Controller
Type of integrated circuit: WIFi Network Controller
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| CYW54591RKUBGT |
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Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: IC: WIFi Network Controller
Type of integrated circuit: WIFi Network Controller
Category: IoT (WiFi/Bluetooth) modules
Description: IC: WIFi Network Controller
Type of integrated circuit: WIFi Network Controller
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| TLE9351VSJXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN interface
Type of integrated circuit: CAN interface
Category: CAN interfaces - integrated circuits
Description: IC: CAN interface
Type of integrated circuit: CAN interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IPD350N06L G |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 68W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 68W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
auf Bestellung 4650 Stücke:
Lieferzeit 14-21 Tag (e)
| IKP28N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 38A; 130W; TO220-3
Case: TO220-3
Power dissipation: 130W
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Gate charge: 50nC
Pulsed collector current: 90A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 38A; 130W; TO220-3
Case: TO220-3
Power dissipation: 130W
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Gate charge: 50nC
Pulsed collector current: 90A
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| DD160N22K |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Max. forward impulse current: 4.6kA
Max. forward voltage: 1.4V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 160A
Semiconductor structure: double series
Case: BG-PB34-1
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Max. forward impulse current: 4.6kA
Max. forward voltage: 1.4V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 160A
Semiconductor structure: double series
Case: BG-PB34-1
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| TLD1120ELXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Mounting: SMD
Protection: overheating OTP
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Operating voltage: 5.5...40V DC
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Mounting: SMD
Protection: overheating OTP
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Operating voltage: 5.5...40V DC
auf Bestellung 1859 Stücke:
Lieferzeit 14-21 Tag (e)
| ISO1H811GAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-on time: 64µs
Turn-off time: 89µs
On-state resistance: 0.15Ω
Kind of output: N-Channel
Power dissipation: 3.3W
Integrated circuit features: 8bit interface; galvanically isolated
Technology: ISOFACE™
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-on time: 64µs
Turn-off time: 89µs
On-state resistance: 0.15Ω
Kind of output: N-Channel
Power dissipation: 3.3W
Integrated circuit features: 8bit interface; galvanically isolated
Technology: ISOFACE™
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| ISO1H816GAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; SPI; PG-DSO-36; 1.2A; Ch: 8; 3.3W
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-36
Output current: 1.2A
Number of channels: 8
Supply voltage: 3.3...5.5V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-on time: 64µs
Turn-off time: 89µs
On-state resistance: 0.15Ω
Kind of output: N-Channel
Power dissipation: 3.3W
Integrated circuit features: 8bit interface; galvanically isolated
Technology: ISOFACE™
Interface: SPI
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; SPI; PG-DSO-36; 1.2A; Ch: 8; 3.3W
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-36
Output current: 1.2A
Number of channels: 8
Supply voltage: 3.3...5.5V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-on time: 64µs
Turn-off time: 89µs
On-state resistance: 0.15Ω
Kind of output: N-Channel
Power dissipation: 3.3W
Integrated circuit features: 8bit interface; galvanically isolated
Technology: ISOFACE™
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| ISO1H801GAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 15÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 15...30V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-on time: 64µs
Turn-off time: 89µs
On-state resistance: 0.15Ω
Kind of output: N-Channel
Power dissipation: 3.3W
Integrated circuit features: 8bit interface; galvanically isolated
Technology: ISOFACE™
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 15÷30VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 15...30V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-on time: 64µs
Turn-off time: 89µs
On-state resistance: 0.15Ω
Kind of output: N-Channel
Power dissipation: 3.3W
Integrated circuit features: 8bit interface; galvanically isolated
Technology: ISOFACE™
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1ED3491MC12MXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; EiceDRIVER™; PG-DSO-16; 9A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-16
Output current: 9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Power dissipation: 0.7W
Integrated circuit features: MOSFET
Technology: EiceDRIVER™
Pulse fall time: 15ns
Insulation voltage: 5.7kV
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; EiceDRIVER™; PG-DSO-16; 9A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PG-DSO-16
Output current: 9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Power dissipation: 0.7W
Integrated circuit features: MOSFET
Technology: EiceDRIVER™
Pulse fall time: 15ns
Insulation voltage: 5.7kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| T3710N04TOFVTXPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 400V; Ifmax: 7kA; 3.71kA; Igt: 250mA
Body dimensions: Ø100/Ø65mm
Mounting: Press-Pack
Gate current: 250mA
Max. off-state voltage: 0.4kV
Load current: 3.71kA
Max. load current: 7kA
Kind of package: in-tray
Type of thyristor: hockey-puck
Max. forward impulse current: 70kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 400V; Ifmax: 7kA; 3.71kA; Igt: 250mA
Body dimensions: Ø100/Ø65mm
Mounting: Press-Pack
Gate current: 250mA
Max. off-state voltage: 0.4kV
Load current: 3.71kA
Max. load current: 7kA
Kind of package: in-tray
Type of thyristor: hockey-puck
Max. forward impulse current: 70kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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| TLI5590A6WXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Sensors and Transducers - Unclassified
Description: OUT: voltage
Output configuration: voltage
Category: Sensors and Transducers - Unclassified
Description: OUT: voltage
Output configuration: voltage
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR48ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 44A; Idm: 250A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 44A; Idm: 250A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IPN95R1K2P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IPD95R1K2P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BGS12PN10E6327XTSA |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| BGS14PN10E6327XTSA |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| BGS14WMA9E6327XTSA |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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| BGS15MU14E6327XTSA |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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| BGSA12GN10E6327XTS |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| BGSA12UGL8E6327XTS |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| BGSA143GL10E6327XT |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| BGSA143ML10E6327XT |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| BGSC2341ML10E6327X |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| BGSX24MU16E6327XTS |
Hersteller: INFINEON TECHNOLOGIES
Category: RF modules
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: RF modules
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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| BGSX33M5U16E6327XT |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Category: Analog multiplexers and switches
Description: IC: RF switch
Type of integrated circuit: RF switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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| TD250N16KOFHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. forward impulse current: 8kA
Gate current: 200mA
Max. forward voltage: 1.5V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 250A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. forward impulse current: 8kA
Gate current: 200mA
Max. forward voltage: 1.5V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 250A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Produkt ist nicht verfügbar
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| TD210N12KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 200mA
Max. forward voltage: 1.65V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 210A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 200mA
Max. forward voltage: 1.65V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 210A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Produkt ist nicht verfügbar
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| TD250N18KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. forward impulse current: 8kA
Gate current: 200mA
Max. forward voltage: 1.5V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 250A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. forward impulse current: 8kA
Gate current: 200mA
Max. forward voltage: 1.5V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 250A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Produkt ist nicht verfügbar
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| TD215N22KOFHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Gate current: 200mA
Max. forward voltage: 1.8V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 215A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Gate current: 200mA
Max. forward voltage: 1.8V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 215A
Max. load current: 410A
Semiconductor structure: double series
Case: BG-PB50-1
Produkt ist nicht verfügbar
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| IDH06G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Mounting: THT
Max. forward voltage: 1.8V
Power dissipation: 62W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Mounting: THT
Max. forward voltage: 1.8V
Power dissipation: 62W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
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| IKW50N65EH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 207ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 207ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65WR5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 79ns
Turn-off time: 420ns
Gate charge: 230nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 79ns
Turn-off time: 420ns
Gate charge: 230nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 161ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 161ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65SS5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AIKW50N65DF5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Pulsed collector current: 150A
Turn-on time: 33ns
Turn-off time: 162ns
Gate charge: 108nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Pulsed collector current: 150A
Turn-on time: 33ns
Turn-off time: 162ns
Gate charge: 108nC
Features of semiconductor devices: integrated anti-parallel diode
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| IPZA65R018CFD7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| ICE5QR0680BGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| FF3MR20KM1HHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| FF3MR20KM1HPHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
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| FF4MR20KM1HHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| FF4MR20KM1HPHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
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| FF5MR20KM1HHPSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| FF5MR20KM1HPHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
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| DF419MR20W3M1HFB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Category: SMD N channel transistors
Description: Module: MOSFET transistor
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
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| TLE92104131QXXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| 2EDL23I06PJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BSZ146N10LS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BTS5016-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BTS5014SDAAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS5016SDAAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BTS50202EKAXUMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BTS50901EJAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BTS50101EKBXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BTS50121EKBXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 12mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 12mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS5012SDAAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS50161EKBXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS50201EKAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6.5A; Ch: 1; N-Channel; SMD; SO14; 1.8W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 20mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 1.8W
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6.5A; Ch: 1; N-Channel; SMD; SO14; 1.8W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 20mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 1.8W
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BTS50452EKAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 85mΩ
Supply voltage: 5...28V DC
Power dissipation: 2W
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 85mΩ
Supply voltage: 5...28V DC
Power dissipation: 2W
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH














