Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129104) > Seite 2152 nach 2152
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BCR133WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BAS2103WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD323 Max. forward voltage: 1.25V Power dissipation: 0.25W Kind of package: reel; tape |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
IFX9201SGAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: IMC; motor controller Interface: SPI Case: PG-DSO-12-17 Output current: 6A Number of channels: 2 Integrated circuit features: current monitoring; fault detection; internal temperature sensor Mounting: SMD On-state resistance: 0.1Ω Operating temperature: -40...125°C Application: DC motors Operating voltage: 5...36V DC Frequency: 20kHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLE8886TNAKSA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BCR583E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 3782 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPD03N50C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR3883MTRPBF | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BCR116E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Application: automotive industry Current gain: 70 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCR116E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BCR116SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BSC027N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Pulsed drain current: 400A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC027N06LS5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 23A Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 23A Mounting: SMD Kind of channel: enhancement Gate charge: 24nC |
auf Bestellung 4802 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BSZ097N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8 Mounting: SMD Power dissipation: 35W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 40A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TSDSON-8 On-state resistance: 9.7mΩ |
auf Bestellung 673 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
S29JL032J70TFI310 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 32Mb FLASH Kind of interface: parallel Case: TSOP48 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFI4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 19A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S29GL512T12TFN010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Mounting: SMD Case: TSOP56 Memory: 512Mb FLASH Kind of package: in-tray Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Kind of memory: NOR Access time: 120ns Kind of interface: parallel Interface: CFI; parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 182 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S29AL008J70TFN010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Case: TSOP48 Memory: 8Mb FLASH Kind of package: in-tray Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Kind of memory: NOR Access time: 70ns Kind of interface: parallel Interface: CFI; parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 192 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S29AL016J70TFN010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Case: TSOP48 Memory: 16Mb FLASH Kind of package: in-tray Operating temperature: -40...125°C Operating voltage: 2.7...3.6V Kind of memory: NOR Access time: 70ns Kind of interface: parallel Interface: CFI; parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 192 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SMBTA56E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
ISC240P06LMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W Case: PG-TDSON-8 Kind of package: reel; tape Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Pulsed drain current: 236A Power dissipation: 188W Polarisation: unipolar Drain current: 59A Kind of channel: enhancement Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ISC079N15NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
IPD50R399CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IPD50R399CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IPI50R399CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IPI50R399CPXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISC078N12NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2EDS8265HXUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side,gate driver; PG-DSO-16; 8A; Ch: 2 Mounting: SMD Operating temperature: -40...125°C Output current: 8A Type of integrated circuit: driver Integrated circuit features: MOSFET Case: PG-DSO-16 Kind of integrated circuit: gate driver; high-side; low-side Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
2EDS8265HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Mounting: SMD Kind of package: reel; tape Output current: -8...4A Type of integrated circuit: driver Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Voltage class: 650V Case: PG-DSO-16 Kind of integrated circuit: high-side; MOSFET gate driver Number of channels: 2 Topology: MOSFET half-bridge Supply voltage: 3...3.5V; 4.5...20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FS25R12KT3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; NTC thermistor; Ic: 40A; AG-ECONO2B; Inverter; 145W Type of semiconductor module: IGBT Topology: NTC thermistor Collector current: 40A Case: AG-ECONO2B Application: Inverter Gate-emitter voltage: ±20V Power dissipation: 145W Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF650R17IE4DB2BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; NTC thermistor; Ic: 650A; 4.15kW; screw Type of semiconductor module: IGBT Topology: NTC thermistor Collector current: 650A Gate-emitter voltage: ±20V Pulsed collector current: 1.3kA Power dissipation: 4.15kW Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPW90R500C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 11A; 156W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 156W Case: TO247-3 On-state resistance: 0.5Ω Mounting: THT Gate charge: 68nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLE7250GVIOXUMA2 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN interface Type of integrated circuit: CAN interface |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BSP77E6433 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Output voltage: 42V Output current: 2.17A Case: SOT223-3 Mounting: SMD Number of channels: 1 Kind of output: N-Channel Technology: HITFET® Kind of integrated circuit: low-side On-state resistance: 70mΩ |
auf Bestellung 1565 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2461SXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiersDescription: IC: operational amplifier Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY223931FXI | INFINEON TECHNOLOGIES |
Category: Supervisor circuits Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 96 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ESD203B102ELE6327XTMA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ESD203B102ELSE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AUIRFS4010-7TRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIKB50N65DF5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIKB50N65DH5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
BAT 64-06 E6327 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 5ns Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Semiconductor structure: common anode; double Capacitance: 6pF Max. forward voltage: 0.75V Leakage current: 2µA Max. forward impulse current: 0.8A Reverse recovery time: 5ns |
auf Bestellung 22479 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 467 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ESD5V0L1B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ESD5V0L1B-02V H6327 | INFINEON TECHNOLOGIES |
Category: Diodes - UnclassifiedDescription: ESD5V0L1B-02V H6327 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 488 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCR133WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS2103WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| FS75R17KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IFX9201SGAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...125°C
Application: DC motors
Operating voltage: 5...36V DC
Frequency: 20kHz
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...125°C
Application: DC motors
Operating voltage: 5...36V DC
Frequency: 20kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE8886TNAKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR583E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 3782 Stücke:
Lieferzeit 14-21 Tag (e)
| SPD03N50C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IR3883MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - DC/DC circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BCR116E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 70
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Current gain: 70
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| BCR116E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BCR116SH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
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| BSC027N06LS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BSC027N06LS5 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 23A
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 23A
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 23A
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 23A
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24nC
auf Bestellung 4802 Stücke:
Lieferzeit 14-21 Tag (e)
| BSZ097N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TSDSON-8
On-state resistance: 9.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TSDSON-8
On-state resistance: 9.7mΩ
auf Bestellung 673 Stücke:
Lieferzeit 14-21 Tag (e)
| S29JL032J70TFI310 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 32Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 32Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFI4229PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512T12TFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP56
Memory: 512Mb FLASH
Kind of package: in-tray
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 120ns
Kind of interface: parallel
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 120ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP56
Memory: 512Mb FLASH
Kind of package: in-tray
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 120ns
Kind of interface: parallel
Interface: CFI; parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 182 Stücke
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| S29AL008J70TFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP48
Memory: 8Mb FLASH
Kind of package: in-tray
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 70ns
Kind of interface: parallel
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP48
Memory: 8Mb FLASH
Kind of package: in-tray
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 70ns
Kind of interface: parallel
Interface: CFI; parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 192 Stücke
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| S29AL016J70TFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP48
Memory: 16Mb FLASH
Kind of package: in-tray
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 70ns
Kind of interface: parallel
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP48
Memory: 16Mb FLASH
Kind of package: in-tray
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Access time: 70ns
Kind of interface: parallel
Interface: CFI; parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 192 Stücke
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| SMBTA56E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| ISC240P06LMATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Pulsed drain current: 236A
Power dissipation: 188W
Polarisation: unipolar
Drain current: 59A
Kind of channel: enhancement
Drain-source voltage: 60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Pulsed drain current: 236A
Power dissipation: 188W
Polarisation: unipolar
Drain current: 59A
Kind of channel: enhancement
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| ISC079N15NM6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD50R399CPATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD50R399CPBTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI50R399CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI50R399CPXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISC078N12NM6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2EDS8265HXUMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; PG-DSO-16; 8A; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: 8A
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Case: PG-DSO-16
Kind of integrated circuit: gate driver; high-side; low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; PG-DSO-16; 8A; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: 8A
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Case: PG-DSO-16
Kind of integrated circuit: gate driver; high-side; low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| 2EDS8265HXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Mounting: SMD
Kind of package: reel; tape
Output current: -8...4A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 650V
Case: PG-DSO-16
Kind of integrated circuit: high-side; MOSFET gate driver
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 3...3.5V; 4.5...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Mounting: SMD
Kind of package: reel; tape
Output current: -8...4A
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Voltage class: 650V
Case: PG-DSO-16
Kind of integrated circuit: high-side; MOSFET gate driver
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 3...3.5V; 4.5...20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FS25R12KT3BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 40A; AG-ECONO2B; Inverter; 145W
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 40A
Case: AG-ECONO2B
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 145W
Technology: Field Stop; Trench
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 40A; AG-ECONO2B; Inverter; 145W
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 40A
Case: AG-ECONO2B
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 145W
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
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Stück im Wert von UAH
| FF650R17IE4DB2BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 650A; 4.15kW; screw
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Power dissipation: 4.15kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 650A; 4.15kW; screw
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Power dissipation: 4.15kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| IPW90R500C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 156W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 156W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 156W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 156W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| TLE7250GVIOXUMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN interface
Type of integrated circuit: CAN interface
Category: CAN interfaces - integrated circuits
Description: IC: CAN interface
Type of integrated circuit: CAN interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP77E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Output voltage: 42V
Output current: 2.17A
Case: SOT223-3
Mounting: SMD
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 70mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Output voltage: 42V
Output current: 2.17A
Case: SOT223-3
Mounting: SMD
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 70mΩ
auf Bestellung 1565 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2461SXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY223931FXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Supervisor circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Supervisor circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESD203B102ELE6327XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| ESD203B102ELSE6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| AUIRFS4010-7TRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| AIKB50N65DF5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| AIKB50N65DH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BAT 64-06 E6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 5ns
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Capacitance: 6pF
Max. forward voltage: 0.75V
Leakage current: 2µA
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 5ns
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Capacitance: 6pF
Max. forward voltage: 0.75V
Leakage current: 2µA
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
auf Bestellung 22479 Stücke:
Lieferzeit 14-21 Tag (e)
| ESD5V0L1B02VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESD5V0L1B-02V H6327 |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)













