Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129105) > Seite 2149 nach 2152
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FS300R12KE3BOSA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FS300R12N3E7BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; AG-ECONO3B; Inverter; screw Technology: Field Stop; Trench Case: AG-ECONO3B Type of semiconductor module: IGBT Mechanical mounting: screw Application: Inverter Gate-emitter voltage: ±20V Topology: NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FS300R12OE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; Ic: 300A; Inverter; 1.65kW Technology: Field Stop; Trench Power dissipation: 1.65kW Type of semiconductor module: IGBT Application: Inverter Gate-emitter voltage: ±20V Collector current: 300A Topology: NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FS300R12OE4PNOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; screw; Field Stop,Trench Technology: Field Stop; Trench Type of semiconductor module: IGBT Electrical mounting: screw Topology: NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FS300R17KE3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; Ic: 300A; 1.65kW; Field Stop,Trench Technology: Field Stop; Trench Power dissipation: 1.65kW Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Collector current: 300A Topology: NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FS300R17KE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; Ic: 300A; Inverter Technology: Field Stop; Trench Type of semiconductor module: IGBT Application: Inverter Gate-emitter voltage: ±20V Collector current: 300A Topology: NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FS300R17OE4PBOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; Ic: 300A Type of semiconductor module: IGBT Collector current: 300A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| F3L225R07W2H3PB63BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; EasyPACK™ Gate-emitter voltage: ±20V Topology: NTC thermistor Type of semiconductor module: IGBT Technology: EasyPACK™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IHW50N65R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 150A Turn-on time: 50ns Turn-off time: 218ns Gate charge: 230nC Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGZ50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 200A Turn-on time: 27ns Turn-off time: 271ns Gate charge: 109nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKZ50N65NH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 200A Turn-on time: 30ns Turn-off time: 275ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IGW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IGB50N65H5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.7A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape Manufacturer series: H5 Pulsed collector current: 150A Turn-on time: 26ns Turn-off time: 147ns Gate charge: 0.12µC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IHW50N65R6XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IKZ50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-4 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 200A Turn-on time: 58ns Turn-off time: 326ns Gate charge: 0.12µC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 150A Turn-on time: 33ns Turn-off time: 184ns Gate charge: 116nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKFW50N65EH5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKFW50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKQ150N65EH7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 160A; 621W; TO247-3 Type of transistor: IGBT Technology: Field Stop; Trench Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 621W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SPD08P06PGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.8A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD048N06L3 G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 90A; Idm: 360A; DPAK,TO252AA Type of transistor: N-MOSFET On-state resistance: 4.8mΩ Mounting: SMD Pulsed drain current: 360A Gate charge: 37nC Drain current: 90A Kind of channel: enhancement Drain-source voltage: 60V Case: DPAK; TO252AA |
auf Bestellung 1265 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFS4227TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 62A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FF1400R17IP4PBOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; screw; Field Stop,Trench Type of semiconductor module: IGBT Topology: NTC thermistor Gate-emitter voltage: ±20V Technology: Field Stop; Trench Electrical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF1400R12IP4PBOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; Ic: 1.4kA; 7.65kW; Field Stop,Trench Type of semiconductor module: IGBT Topology: NTC thermistor Collector current: 1.4kA Gate-emitter voltage: ±20V Power dissipation: 7.65kW Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TDB6HK240N16PBOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; AG-ECONO4-1 Type of semiconductor module: IGBT Case: AG-ECONO4-1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BFR183E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 65mA Power dissipation: 0.45W Case: SOT23 Current gain: 100 Mounting: SMD Frequency: 8GHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR7546TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 71A Power dissipation: 99W Case: DPAK On-state resistance: 7.9mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IAUTN12S5N018GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGA616H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSD214SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SOT363 On-state resistance: 0.25Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ESD218B102ELSE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7380TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC007N04LS6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 48A Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 48A On-state resistance: 0.7mΩ Gate charge: 94nC Kind of channel: enhancement |
auf Bestellung 4868 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IKD04N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK Type of transistor: IGBT Technology: Field Stop; Trench Power dissipation: 36.6W Case: DPAK Mounting: SMD Gate charge: 24nC Pulsed collector current: 12A Turn-off time: 90ns Gate-emitter voltage: ±20V Collector current: 8A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC074N15NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 114A; 214W; TSON8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 114A Power dissipation: 214W Case: TSON8 On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 41nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR8802VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; reel,tape Type of diode: switching Mounting: SMD Features of semiconductor devices: PIN; RF Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB339N20NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 33.9mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSC093N15NS5SCATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BSC093N15NS5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 348A Type of transistor: N-MOSFET Mounting: SMD Gate charge: 33nC Kind of channel: enhancement Pulsed drain current: 348A |
auf Bestellung 4531 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISC110N12NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: reel; tape Case: TSOP44 II Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV18LL-55BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: reel; tape Case: VFBGA48 Kind of memory: SRAM Supply voltage: 1.65...2.25V DC Access time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: reel; tape Case: VFBGA48 Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: reel; tape Case: TSOP44 II Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137EV30LL-45ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: in-tray Case: TSOP44 II Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 135 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV18LL-55BVXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: in-tray Case: VFBGA48 Kind of memory: SRAM Supply voltage: 1.65...2.25V DC Access time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 960 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV30LL-45BVXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: in-tray Case: VFBGA48 Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 960 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV30LL-45ZSXA | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: in-tray Case: TSOP44 II Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1350 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV30LL-45ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: in-tray Case: TSOP44 II Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 45ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 675 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62137FV30LL-55ZSXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Memory: 2Mb SRAM Kind of interface: parallel Memory organisation: 128kx16bit Kind of package: in-tray Case: TSOP44 II Kind of memory: SRAM Supply voltage: 2.2...3.6V DC Access time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 675 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ITS4300SSJDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; PG-DSO-8 Number of channels: 1 Output current: 0.4A Supply voltage: 5...34V DC Type of integrated circuit: power switch Kind of output: N-Channel Power dissipation: 1.4W Operating temperature: -40...125°C Integrated circuit features: thermal protection Case: PG-DSO-8 Kind of integrated circuit: high-side On-state resistance: 0.3Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BTS4300SGAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGA 524N6 E6327 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiers Description: IC: operational amplifier; Features: low noise Type of integrated circuit: operational amplifier Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low noise |
auf Bestellung 14730 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 112 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AUIRS2123STR | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7351TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 618 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IR25603STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR25602STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR25604STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR25606STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IPP032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3 Mounting: THT Power dissipation: 188W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 120A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 3.2mΩ |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FS300R12KE3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS300R12N3E7BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; AG-ECONO3B; Inverter; screw
Technology: Field Stop; Trench
Case: AG-ECONO3B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Application: Inverter
Gate-emitter voltage: ±20V
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; AG-ECONO3B; Inverter; screw
Technology: Field Stop; Trench
Case: AG-ECONO3B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Application: Inverter
Gate-emitter voltage: ±20V
Topology: NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS300R12OE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 300A; Inverter; 1.65kW
Technology: Field Stop; Trench
Power dissipation: 1.65kW
Type of semiconductor module: IGBT
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 300A; Inverter; 1.65kW
Technology: Field Stop; Trench
Power dissipation: 1.65kW
Type of semiconductor module: IGBT
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS300R12OE4PNOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; screw; Field Stop,Trench
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Electrical mounting: screw
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; screw; Field Stop,Trench
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Electrical mounting: screw
Topology: NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS300R17KE3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 300A; 1.65kW; Field Stop,Trench
Technology: Field Stop; Trench
Power dissipation: 1.65kW
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 300A; 1.65kW; Field Stop,Trench
Technology: Field Stop; Trench
Power dissipation: 1.65kW
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS300R17KE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 300A; Inverter
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 300A; Inverter
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FS300R17OE4PBOSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 300A
Type of semiconductor module: IGBT
Collector current: 300A
Category: IGBT modules
Description: Module: IGBT; Ic: 300A
Type of semiconductor module: IGBT
Collector current: 300A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| F3L225R07W2H3PB63BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; EasyPACK™
Gate-emitter voltage: ±20V
Topology: NTC thermistor
Type of semiconductor module: IGBT
Technology: EasyPACK™
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; EasyPACK™
Gate-emitter voltage: ±20V
Topology: NTC thermistor
Type of semiconductor module: IGBT
Technology: EasyPACK™
Produkt ist nicht verfügbar
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IHW50N65R5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 50ns
Turn-off time: 218ns
Gate charge: 230nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 50ns
Turn-off time: 218ns
Gate charge: 230nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| IGZ50N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 27ns
Turn-off time: 271ns
Gate charge: 109nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 27ns
Turn-off time: 271ns
Gate charge: 109nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZ50N65NH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 30ns
Turn-off time: 275ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 30ns
Turn-off time: 275ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGW50N65H5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGB50N65H5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: H5
Pulsed collector current: 150A
Turn-on time: 26ns
Turn-off time: 147ns
Gate charge: 0.12µC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: H5
Pulsed collector current: 150A
Turn-on time: 26ns
Turn-off time: 147ns
Gate charge: 0.12µC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IHW50N65R6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKZ50N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 58ns
Turn-off time: 326ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 58ns
Turn-off time: 326ns
Gate charge: 0.12µC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIGW50N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 150A
Turn-on time: 33ns
Turn-off time: 184ns
Gate charge: 116nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 150A
Turn-on time: 33ns
Turn-off time: 184ns
Gate charge: 116nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKFW50N65EH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKFW50N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKQ150N65EH7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 160A; 621W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 621W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 160A; 621W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 621W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPD08P06PGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD048N06L3 G |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; Idm: 360A; DPAK,TO252AA
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 360A
Gate charge: 37nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 60V
Case: DPAK; TO252AA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; Idm: 360A; DPAK,TO252AA
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 360A
Gate charge: 37nC
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 60V
Case: DPAK; TO252AA
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFS4227TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FF1400R17IP4PBOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; screw; Field Stop,Trench
Type of semiconductor module: IGBT
Topology: NTC thermistor
Gate-emitter voltage: ±20V
Technology: Field Stop; Trench
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; screw; Field Stop,Trench
Type of semiconductor module: IGBT
Topology: NTC thermistor
Gate-emitter voltage: ±20V
Technology: Field Stop; Trench
Electrical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FF1400R12IP4PBOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 1.4kA; 7.65kW; Field Stop,Trench
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Power dissipation: 7.65kW
Technology: Field Stop; Trench
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 1.4kA; 7.65kW; Field Stop,Trench
Type of semiconductor module: IGBT
Topology: NTC thermistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Power dissipation: 7.65kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TDB6HK240N16PBOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; AG-ECONO4-1
Type of semiconductor module: IGBT
Case: AG-ECONO4-1
Category: IGBT modules
Description: Module: IGBT; AG-ECONO4-1
Type of semiconductor module: IGBT
Case: AG-ECONO4-1
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFR183E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR7546TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUTN12S5N018GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BGA616H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSD214SNH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT363
On-state resistance: 0.25Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT363
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD218B102ELSE6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| IRF7380TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| BSC007N04LS6 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 48A
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 0.7mΩ
Gate charge: 94nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 48A
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 0.7mΩ
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 4868 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD04N60RC2ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 36.6W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Pulsed collector current: 12A
Turn-off time: 90ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 600V
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 36.6W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Pulsed collector current: 12A
Turn-off time: 90ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BSC074N15NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 114A; 214W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 114A
Power dissipation: 214W
Case: TSON8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 114A; 214W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 114A
Power dissipation: 214W
Case: TSON8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR8802VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; reel,tape
Type of diode: switching
Mounting: SMD
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; reel,tape
Type of diode: switching
Mounting: SMD
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB339N20NM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC093N15NS5SCATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC093N15NS5 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 348A
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Pulsed drain current: 348A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 348A
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Pulsed drain current: 348A
auf Bestellung 4531 Stücke:
Lieferzeit 14-21 Tag (e)
| ISC110N12NM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV18LL-55BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 1.65...2.25V DC
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 1.65...2.25V DC
Access time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: reel; tape
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137EV30LL-45ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 135 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV18LL-55BVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 1.65...2.25V DC
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 1.65...2.25V DC
Access time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 960 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV30LL-45BVXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: VFBGA48
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 960 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV30LL-45ZSXA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1350 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV30LL-45ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 45ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 675 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62137FV30LL-55ZSXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Memory: 2Mb SRAM
Kind of interface: parallel
Memory organisation: 128kx16bit
Kind of package: in-tray
Case: TSOP44 II
Kind of memory: SRAM
Supply voltage: 2.2...3.6V DC
Access time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 675 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ITS4300SSJDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; PG-DSO-8
Number of channels: 1
Output current: 0.4A
Supply voltage: 5...34V DC
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 1.4W
Operating temperature: -40...125°C
Integrated circuit features: thermal protection
Case: PG-DSO-8
Kind of integrated circuit: high-side
On-state resistance: 0.3Ω
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; PG-DSO-8
Number of channels: 1
Output current: 0.4A
Supply voltage: 5...34V DC
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 1.4W
Operating temperature: -40...125°C
Integrated circuit features: thermal protection
Case: PG-DSO-8
Kind of integrated circuit: high-side
On-state resistance: 0.3Ω
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS4300SGAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BGA 524N6 E6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier; Features: low noise
Type of integrated circuit: operational amplifier
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; Features: low noise
Type of integrated circuit: operational amplifier
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low noise
auf Bestellung 14730 Stücke:
Lieferzeit 14-21 Tag (e)
| AUIRS2123STR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7351TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 618 Stücke:
Lieferzeit 14-21 Tag (e)
| IR25603STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR25602STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR25604STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR25606STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP032N06N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Mounting: THT
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 3.2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Mounting: THT
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 3.2mΩ
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)