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S78HS512TC0BHB010 S78HS512TC0BHB010 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Memory Interface: SPI - Octal I/O
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 200 MHz
Technology: FLASH, RAM
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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10+59.24 EUR
25+57.36 EUR
50+55.94 EUR
100+54.54 EUR
260+52.65 EUR
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S25FL256LAGBHB030 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_32-MB_128-MB_16-MB_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017efd3019571254 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Active
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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S25FL256LAGBHB033 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_32-MB_128-MB_16-MB_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017efd3019571254 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Not For New Designs
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
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XC164CS16F40FBBFXUMA1 XC164CS16F40FBBFXUMA1 Infineon Technologies xc164cs-pb.pdf?fileId=db3a304412b407950112b40ae68206b9 Description: IC MCU 16BIT 128KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Last Time Buy
Number of I/O: 79
DigiKey Programmable: Not Verified
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TZ800N16KOFTIMHDSA1 Infineon Technologies Description: MODULE
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL40DM247XTMA1 IRL40DM247XTMA1 Infineon Technologies Infineon-IRL40DM247-DataSheet-v02_05-EN.pdf?fileId=5546d46270c4f93e0170f9bef97a7367 Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-8-904
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Cut Tape (CT)
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10+4.21 EUR
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IAUA250N08S5N018AUMA1 IAUA250N08S5N018AUMA1 Infineon Technologies Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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10+5.22 EUR
100+3.7 EUR
500+3.42 EUR
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BCR430ULEDBOARDTOBO1 BCR430ULEDBOARDTOBO1 Infineon Technologies Infineon-ProductBrief_LinearLEDDriverIC_BCR430U-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fa19556c455ca Description: EVAL BOARD FOR BCR430U
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: BCR430U
Current - Output / Channel: 100mA
Voltage - Input: 6V ~ 42V
Voltage - Output: 1.24V
Packaging: Box
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CY8C20637-24LQXIT CY8C20637-24LQXIT Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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IDH10G65C5XKSA2 IDH10G65C5XKSA2 Infineon Technologies IDH10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06a8f03d0169 Description: DIODE SIL CARB 650V 10A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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FS15R06VL4B2BOMA1 FS15R06VL4B2BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Bulk
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FS15R06VL4B2BOMA1 FS15R06VL4B2BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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IPP055N03LGXKSA1 IPP055N03LGXKSA1 Infineon Technologies IP%28B%2CP%29055N03LG.pdf Description: MOSFET N-CH 30V 50A TO220-3
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 68W (Tc)
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BFP405FH6327XTSA1 BFP405FH6327XTSA1 Infineon Technologies BFP405F.pdf Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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BFP405FH6327XTSA1 BFP405FH6327XTSA1 Infineon Technologies BFP405F.pdf Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
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33+0.65 EUR
48+0.44 EUR
53+0.39 EUR
100+0.35 EUR
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IDH03G65C5XKSA2 IDH03G65C5XKSA2 Infineon Technologies IDH03G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b1013a0316abfd58ff Description: DIODE SIL CARB 650V 3A TO220-2-1
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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XMC4402F100F256BAXQMA1 XMC4402F100F256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 256KB FLASH 100LQFP
Number of I/O: 55
Part Status: Active
Supplier Device Package: PG-LQFP-100-25
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 80K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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ICE2QR4765GXUMA1 ICE2QR4765GXUMA1 Infineon Technologies Infineon-ICE2QR4765G-DS-v02_01-en.pdf?fileId=db3a30433162923a0131979f8a875525 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
Produkt ist nicht verfügbar
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ICE2QR4765GXUMA1 ICE2QR4765GXUMA1 Infineon Technologies Infineon-ICE2QR4765G-DS-v02_01-en.pdf?fileId=db3a30433162923a0131979f8a875525 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
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8+2.78 EUR
11+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.48 EUR
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CY9BF506NBPMC-G-UNE2 CY9BF506NBPMC-G-UNE2 Infineon Technologies authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=5253376e6785b6adaea00d1f087b5692%3A%2Fdgdlac%2FInfineon-CY9B Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR133SH6433XTMA1 BCR133SH6433XTMA1 Infineon Technologies bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288 Description: TRANS PREBIAS 2NPN 50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SPW20N60S5FKSA1 SPW20N60S5FKSA1 Infineon Technologies SPW20N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c879f471b Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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CY91F585ASGPMC1-GTE1 CY91F585ASGPMC1-GTE1 Infineon Technologies download Description: IC MCU 32BIT 576KB FLASH 64LQFP
Part Status: Last Time Buy
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 1x10b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 56K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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SK-86R12-01 Infineon Technologies Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12-01
Type: Interface
Function: USB Controller
Packaging: Box
Produkt ist nicht verfügbar
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SK-86R12-CPU01 Infineon Technologies Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12
Type: Interface
Function: USB
Packaging: Box
Produkt ist nicht verfügbar
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SK-86R11-BASE Infineon Technologies Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R11
Type: Interface
Function: USB
Packaging: Box
Produkt ist nicht verfügbar
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SK-86R12-ADA-JTAG Infineon Technologies Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Packaging: Box
Produkt ist nicht verfügbar
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TDA21475AUMA1 TDA21475AUMA1 Infineon Technologies Infineon-TDA21475-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65cb003a634f&ack=t Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TDA21475AUMA1 TDA21475AUMA1 Infineon Technologies Infineon-TDA21475-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65cb003a634f&ack=t Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TDA21472AUMA1 TDA21472AUMA1 Infineon Technologies Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
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CYPAP111A3-10SXQT CYPAP111A3-10SXQT Infineon Technologies Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294 Description: PRIMARY SIDE STARTUP CONTROLLER
Control Features: Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: 10-SOIC
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 500V
Internal Switch(s): No
Frequency - Switching: 30kHz
Duty Cycle: 70%
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Region Utilized: North America
Input Connector: NEMA 1-15P
Form: Wall Mount (Class II)
Input Type: Fixed Blade
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Input: 85 ~ 265 VAC
Output Connector: USB Micro
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CYW20730A1KFBGT CYW20730A1KFBGT Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Package / Case: 64-VFBGA
Packaging: Tape & Reel (TR)
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CYW20730A1KFBGT CYW20730A1KFBGT Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Package / Case: 64-VFBGA
Packaging: Cut Tape (CT)
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
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IMW120R030M1HXKSA1 IMW120R030M1HXKSA1 Infineon Technologies Infineon-IMW120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fde38b669a Description: SICFET N-CH 1.2KV 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
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EVAL45W19VFLYBP7TOBO1 EVAL45W19VFLYBP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_45W_adapter_Reference_Design-AN-v01_00-EN.pdf?fileId=5546d46256fb43b30157052a505a5f0e Description: EVAL BOARD FOR ICE2QS03G
Contents: Board(s)
Power - Output: 45W
Part Status: Active
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE2QS03G
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 2.4A
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 19V
Packaging: Bulk
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EVAL40W19VFLYBP7TOBO2 EVAL40W19VFLYBP7TOBO2 Infineon Technologies Infineon-ApplicationNote_EVAL_40W_19V_FLYB_P7-AN-v01_00-EN.pdf?fileId=5546d4625a888733015aa411091a105d Description: EVAL BOARD FOR ICE2QS03G
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICE2QS03G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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BSC884N03MS G BSC884N03MS G Infineon Technologies BSC884N03MS_G.pdf Description: MOSFET N-CH 34V 17A/85A TDSON
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Produkt ist nicht verfügbar
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CY15B128Q-SXA CY15B128Q-SXA Infineon Technologies Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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3+10.45 EUR
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FM24CL16B-DGTR FM24CL16B-DGTR Infineon Technologies Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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FM24CL16B-DGTR FM24CL16B-DGTR Infineon Technologies Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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5+4.8 EUR
10+4.49 EUR
25+4.36 EUR
50+4.26 EUR
100+4.16 EUR
250+4.03 EUR
500+3.94 EUR
1000+3.83 EUR
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IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 Infineon Technologies IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2_pdf.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7 Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
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50+5.49 EUR
100+5 EUR
500+4.14 EUR
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BC849CWH6327XTSA1 BC849CWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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TLE5501EVALKITTOBO1 TLE5501EVALKITTOBO1 Infineon Technologies Infineon-Infineon-TLE5501-DS-v01_00--DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164eca986da1a32 Description: EVAL TLE5501 ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5501
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
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TT240N16SOFHPSA1 TT240N16SOFHPSA1 Infineon Technologies Infineon-TT240N16SOF-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb0163910f30864124 Description: LA-T-BOND MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 275 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: 130°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IRFB5615PBF IRFB5615PBF Infineon Technologies irfb5615pbf.pdf?fileId=5546d462533600a40153561674e71e48 Description: MOSFET N-CH 150V 35A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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100+2.11 EUR
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ISZ0501NLSATMA1 ISZ0501NLSATMA1 Infineon Technologies Infineon-ISZ0501NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0ac1554515f Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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ISZ0901NLSATMA1 ISZ0901NLSATMA1 Infineon Technologies Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162 Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISZ0901NLSATMA1 ISZ0901NLSATMA1 Infineon Technologies Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162 Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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TD280N16SOFHPSA1 TD280N16SOFHPSA1 Infineon Technologies Infineon-TT280N16SOF-DS-v03_07-EN.pdf?fileId=5546d462525dbac40152d5e434fd072d Description: SCR MODULE 1600V 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 280 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD330N16KOFTIMHPSA1 TD330N16KOFTIMHPSA1 Infineon Technologies Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54 Description: SCR MODULE 1.6KV 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 Infineon Technologies Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54 Description: SCR MODULE 1.6KV 520A MODULE
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.6 kV
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TT320N16SOFHPSA1 TT320N16SOFHPSA1 Infineon Technologies Infineon-TT320N16SOF-DS-v03_07-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d Description: THYRISTOR MODULE 1600V 320A
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 320 A
Number of SCRs, Diodes: 2 SCRs
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - All SCRs
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1 Stücke:
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FZ300R12KE3GHOSA1 FZ300R12KE3GHOSA1 Infineon Technologies Infineon-FZ300R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433747c5cb6 Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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1+214.51 EUR
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IPP120N08S403AKSA1 IPP120N08S403AKSA1 Infineon Technologies IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512 Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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2+13.57 EUR
10+9.14 EUR
50+7.24 EUR
100+6.63 EUR
500+5.56 EUR
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BAS40E6327 BAS40E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: BAS40 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 144999 Stücke:
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4052+0.14 EUR
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CY7C64343-32LQXC CY7C64343-32LQXC Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Part Status: Obsolete
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS8409TRL AUIRFS8409TRL Infineon Technologies auirfs8409.pdf?fileId=5546d462533600a4015355b73c5f14ec Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS8409TRL AUIRFS8409TRL Infineon Technologies auirfs8409.pdf?fileId=5546d462533600a4015355b73c5f14ec Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
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2+13.45 EUR
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ESD254B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD254-B1-W01005-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178ec53fcc8767f Description: TVS DIODES SG-WLL-2
Power - Peak Pulse: 64W
Voltage - Clamping (Max) @ Ipp: 32V (Typ)
Voltage - Breakdown (Min): 27V
Bidirectional Channels: 1
Supplier Device Package: P/PG-WLL-2-2
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 2.5pF @ 1GHz
Applications: USB
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar
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CY14B101LA-ZS20XIT CY14B101LA-ZS20XIT Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PAR 44TSOP II
Memory Organization: 128K x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 20ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S78HS512TC0BHB010 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB010
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Memory Interface: SPI - Octal I/O
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 200 MHz
Technology: FLASH, RAM
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 2427 Stücke:
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1+63.99 EUR
10+59.24 EUR
25+57.36 EUR
50+55.94 EUR
100+54.54 EUR
260+52.65 EUR
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S25FL256LAGBHB030 Infineon-S25FL256L_S25FL128L_256-MB_32-MB_128-MB_16-MB_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017efd3019571254
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Active
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S25FL256LAGBHB033 Infineon-S25FL256L_S25FL128L_256-MB_32-MB_128-MB_16-MB_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017efd3019571254
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Not For New Designs
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XC164CS16F40FBBFXUMA1 xc164cs-pb.pdf?fileId=db3a304412b407950112b40ae68206b9
XC164CS16F40FBBFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Last Time Buy
Number of I/O: 79
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TZ800N16KOFTIMHDSA1
Hersteller: Infineon Technologies
Description: MODULE
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL40DM247XTMA1 Infineon-IRL40DM247-DataSheet-v02_05-EN.pdf?fileId=5546d46270c4f93e0170f9bef97a7367
IRL40DM247XTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-8-904
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Cut Tape (CT)
auf Bestellung 14 Stücke:
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AnzahlPrivatkunde
4+6.43 EUR
10+4.21 EUR
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IAUA250N08S5N018AUMA1 Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41
IAUA250N08S5N018AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1805 Stücke:
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AnzahlPrivatkunde
3+7.91 EUR
10+5.22 EUR
100+3.7 EUR
500+3.42 EUR
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BCR430ULEDBOARDTOBO1 Infineon-ProductBrief_LinearLEDDriverIC_BCR430U-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fa19556c455ca
BCR430ULEDBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCR430U
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: BCR430U
Current - Output / Channel: 100mA
Voltage - Input: 6V ~ 42V
Voltage - Output: 1.24V
Packaging: Box
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CY8C20637-24LQXIT Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20637-24LQXIT
Hersteller: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDH10G65C5XKSA2 IDH10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06a8f03d0169
IDH10G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Produkt ist nicht verfügbar
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FS15R06VL4B2BOMA1
FS15R06VL4B2BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 3760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+39.88 EUR
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FS15R06VL4B2BOMA1
FS15R06VL4B2BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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IPP055N03LGXKSA1 IP%28B%2CP%29055N03LG.pdf
IPP055N03LGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Produkt ist nicht verfügbar
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BFP405FH6327XTSA1 BFP405F.pdf
BFP405FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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BFP405FH6327XTSA1 BFP405F.pdf
BFP405FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 190 Stücke:
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33+0.65 EUR
48+0.44 EUR
53+0.39 EUR
100+0.35 EUR
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IDH03G65C5XKSA2 IDH03G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b1013a0316abfd58ff
IDH03G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-1
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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XMC4402F100F256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4402F100F256BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Number of I/O: 55
Part Status: Active
Supplier Device Package: PG-LQFP-100-25
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 80K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICE2QR4765GXUMA1 Infineon-ICE2QR4765G-DS-v02_01-en.pdf?fileId=db3a30433162923a0131979f8a875525
ICE2QR4765GXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
Produkt ist nicht verfügbar
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ICE2QR4765GXUMA1 Infineon-ICE2QR4765G-DS-v02_01-en.pdf?fileId=db3a30433162923a0131979f8a875525
ICE2QR4765GXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
11+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.48 EUR
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CY9BF506NBPMC-G-UNE2 authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=5253376e6785b6adaea00d1f087b5692%3A%2Fdgdlac%2FInfineon-CY9B
CY9BF506NBPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR133SH6433XTMA1 bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288
BCR133SH6433XTMA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS 2NPN 50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPW20N60S5FKSA1 SPW20N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c879f471b
SPW20N60S5FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 57 Stücke:
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AnzahlPrivatkunde
2+11.52 EUR
30+6.54 EUR
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CY91F585ASGPMC1-GTE1 download
CY91F585ASGPMC1-GTE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Part Status: Last Time Buy
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 1x10b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 56K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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SK-86R12-01
Hersteller: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12-01
Type: Interface
Function: USB Controller
Packaging: Box
Produkt ist nicht verfügbar
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SK-86R12-CPU01
Hersteller: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12
Type: Interface
Function: USB
Packaging: Box
Produkt ist nicht verfügbar
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SK-86R11-BASE
Hersteller: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R11
Type: Interface
Function: USB
Packaging: Box
Produkt ist nicht verfügbar
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SK-86R12-ADA-JTAG
Hersteller: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Packaging: Box
Produkt ist nicht verfügbar
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TDA21475AUMA1 Infineon-TDA21475-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65cb003a634f&ack=t
TDA21475AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TDA21475AUMA1 Infineon-TDA21475-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65cb003a634f&ack=t
TDA21475AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TDA21472AUMA1 Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e
TDA21472AUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
Produkt ist nicht verfügbar
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CYPAP111A3-10SXQT Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294
CYPAP111A3-10SXQT
Hersteller: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Control Features: Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: 10-SOIC
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 500V
Internal Switch(s): No
Frequency - Switching: 30kHz
Duty Cycle: 70%
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Region Utilized: North America
Input Connector: NEMA 1-15P
Form: Wall Mount (Class II)
Input Type: Fixed Blade
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Input: 85 ~ 265 VAC
Output Connector: USB Micro
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.19 EUR
Mindestbestellmenge: 2500 Stücke
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CYW20730A1KFBGT CYW20730_RevJ_4-25-17.pdf
CYW20730A1KFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Package / Case: 64-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CYW20730A1KFBGT CYW20730_RevJ_4-25-17.pdf
CYW20730A1KFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Package / Case: 64-VFBGA
Packaging: Cut Tape (CT)
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Produkt ist nicht verfügbar
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IMW120R030M1HXKSA1 Infineon-IMW120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fde38b669a
IMW120R030M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
auf Bestellung 444 Stücke:
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AnzahlPrivatkunde
1+31.37 EUR
30+19.33 EUR
120+16.7 EUR
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EVAL45W19VFLYBP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_45W_adapter_Reference_Design-AN-v01_00-EN.pdf?fileId=5546d46256fb43b30157052a505a5f0e
EVAL45W19VFLYBP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QS03G
Contents: Board(s)
Power - Output: 45W
Part Status: Active
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE2QS03G
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 2.4A
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 19V
Packaging: Bulk
Produkt ist nicht verfügbar
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EVAL40W19VFLYBP7TOBO2 Infineon-ApplicationNote_EVAL_40W_19V_FLYB_P7-AN-v01_00-EN.pdf?fileId=5546d4625a888733015aa411091a105d
EVAL40W19VFLYBP7TOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QS03G
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICE2QS03G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+142.9 EUR
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BSC884N03MS G BSC884N03MS_G.pdf
BSC884N03MS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 17A/85A TDSON
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Produkt ist nicht verfügbar
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CY15B128Q-SXA Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI
CY15B128Q-SXA
Hersteller: Infineon Technologies
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 615 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.45 EUR
Mindestbestellmenge: 3 Stücke
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
FM24CL16B-DGTR
Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.69 EUR
Mindestbestellmenge: 3000 Stücke
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
FM24CL16B-DGTR
Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 13050 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+4.49 EUR
25+4.36 EUR
50+4.26 EUR
100+4.16 EUR
250+4.03 EUR
500+3.94 EUR
1000+3.83 EUR
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IPP110N20N3GXKSA1 IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2_pdf.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7
IPP110N20N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.56 EUR
10+7.01 EUR
50+5.49 EUR
100+5 EUR
500+4.14 EUR
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BC849CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC849CWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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TLE5501EVALKITTOBO1 Infineon-Infineon-TLE5501-DS-v01_00--DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164eca986da1a32
TLE5501EVALKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL TLE5501 ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5501
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+125.77 EUR
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TT240N16SOFHPSA1 Infineon-TT240N16SOF-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb0163910f30864124
TT240N16SOFHPSA1
Hersteller: Infineon Technologies
Description: LA-T-BOND MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 275 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: 130°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IRFB5615PBF irfb5615pbf.pdf?fileId=5546d462533600a40153561674e71e48
IRFB5615PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 35A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.08 EUR
50+2.34 EUR
100+2.11 EUR
500+1.69 EUR
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ISZ0501NLSATMA1 Infineon-ISZ0501NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0ac1554515f
ISZ0501NLSATMA1
Hersteller: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ISZ0901NLSATMA1 Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162
ISZ0901NLSATMA1
Hersteller: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISZ0901NLSATMA1 Infineon-ISZ0901NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0b53df55162
ISZ0901NLSATMA1
Hersteller: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TD280N16SOFHPSA1 Infineon-TT280N16SOF-DS-v03_07-EN.pdf?fileId=5546d462525dbac40152d5e434fd072d
TD280N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 280 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 6 Stücke:
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AnzahlPrivatkunde
1+222.72 EUR
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TD330N16KOFTIMHPSA1 Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54
TD330N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 24 Stücke:
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AnzahlPrivatkunde
1+367.76 EUR
12+325.38 EUR
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TD330N16KOFHPSA2 Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54
TD330N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.6 kV
auf Bestellung 67 Stücke:
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AnzahlPrivatkunde
1+354.33 EUR
12+311.7 EUR
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TT320N16SOFHPSA1 Infineon-TT320N16SOF-DS-v03_07-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d
TT320N16SOFHPSA1
Hersteller: Infineon Technologies
Description: THYRISTOR MODULE 1600V 320A
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 320 A
Number of SCRs, Diodes: 2 SCRs
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - All SCRs
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+191.77 EUR
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FZ300R12KE3GHOSA1 Infineon-FZ300R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433747c5cb6
FZ300R12KE3GHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
1+214.51 EUR
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IPP120N08S403AKSA1 IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512
IPP120N08S403AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8083 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.57 EUR
10+9.14 EUR
50+7.24 EUR
100+6.63 EUR
500+5.56 EUR
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BAS40E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40E6327
Hersteller: Infineon Technologies
Description: BAS40 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 144999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4052+0.14 EUR
Mindestbestellmenge: 4052 Stücke
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CY7C64343-32LQXC download
CY7C64343-32LQXC
Hersteller: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Part Status: Obsolete
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS8409TRL auirfs8409.pdf?fileId=5546d462533600a4015355b73c5f14ec
AUIRFS8409TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS8409TRL auirfs8409.pdf?fileId=5546d462533600a4015355b73c5f14ec
AUIRFS8409TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.45 EUR
Mindestbestellmenge: 2 Stücke
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ESD254B1W01005E6327XTSA1 Infineon-ESD254-B1-W01005-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178ec53fcc8767f
Hersteller: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Power - Peak Pulse: 64W
Voltage - Clamping (Max) @ Ipp: 32V (Typ)
Voltage - Breakdown (Min): 27V
Bidirectional Channels: 1
Supplier Device Package: P/PG-WLL-2-2
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 2.5pF @ 1GHz
Applications: USB
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Produkt ist nicht verfügbar
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CY14B101LA-ZS20XIT Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101LA-ZS20XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Memory Organization: 128K x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 20ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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