Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124697) > Seite 553 nach 2079
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IDB30E60ATMA1 | Infineon Technologies |
 Description: DIODE GP 600V 52.3A TO263-3-2Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO263-3-2 Current - Average Rectified (Io): 52.3A Technology: Standard Reverse Recovery Time (trr): 126 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDP30E60XKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 52.3A TO220 Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-2 Current - Average Rectified (Io): 52.3A Technology: Standard Reverse Recovery Time (trr): 126 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDW30E60AFKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3 Current - Reverse Leakage @ Vr: 40 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3 Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 143 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AIDW30E60 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A TO247-3 Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IKB20N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 38A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 560µJ (on), 130µJ (off) Test Condition: 400V, 20A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
auf Bestellung 673 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4147AZS-S465T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Qualification: AEC-Q100 Grade: Automotive Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Number of I/O: 54 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4147AZS-S465 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 54 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFR5410TRRPBF | Infineon Technologies |
Description: MOSFET P-CH 100V 13A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5045ICR100HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2 Qualification: AEC-Q100 Grade: Automotive Part Status: Active Technology: Hall Effect Operating Temperature: -40°C ~ 125°C Axis: Single Output Type: PWM Features: Selectable Scale, Temperature Compensated Packaging: Cut Tape (CT) |
auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5045ICR100HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2 Qualification: AEC-Q100 Grade: Automotive Part Status: Active Technology: Hall Effect Operating Temperature: -40°C ~ 125°C Axis: Single Output Type: PWM Features: Selectable Scale, Temperature Compensated Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5012BE9000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSOR Packaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5045ICIJGR050HALA1 | Infineon Technologies |
Description: SEN MR ANALOG CURRENT PG-SSO-2-1 Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: ±25mT Technology: Magnetoresistive Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Mounting Type: Through Hole Output Type: Analog Current Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5045ICIJGR050HALA1 | Infineon Technologies |
Description: SEN MR ANALOG CURRENT PG-SSO-2-1 Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: ±25mT Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Mounting Type: Through Hole Output Type: Analog Current Package / Case: 2-SIP, SSO-2-1 Packaging: Tape & Box (TB) Technology: Magnetoresistive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5046ICPWM2R100HALA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-2-1 Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1955 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R100HALA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-2-1 Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Tape & Box (TB) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE50451ICR075XAMA1 | Infineon Technologies |
Description: SEN MAGNETORESISTIVE PG-SSO-2-1 Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: ±25mT Technology: Magnetoresistive Voltage - Supply: 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: Single Mounting Type: Through Hole Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R050HALA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-2-1 Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 4.25V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R050HALA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-2-1 Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 4.25V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Tape & Box (TB) Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE50461ICAKLRXAMA1 | Infineon Technologies |
Description: SEN MAGNETORESISTIVE PG-SSO-2-1 Packaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE50461ICAKLRXAMA1 | Infineon Technologies |
Description: SEN MAGNETORESISTIVE PG-SSO-2-1 Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5046ICAKERRHALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2 Part Status: Active Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICAKERRHALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2 Part Status: Active Packaging: Tape & Box (TB) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5012BE1000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSOR Packaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5012BE5000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSOR Packaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPC218N06N3X7SA1 | Infineon Technologies |
Description: MV POWER MOS Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6195 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP60R099P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Power Dissipation (Max): 117W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V |
auf Bestellung 1111 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R099P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R099C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A TO220-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) FET Type: N-Channel |
auf Bestellung 1434 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R099C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 22A TO220-3 Vgs(th) (Max) @ Id: 4V @ 490µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPI60R099CPXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW60R099ZH | Infineon Technologies |
Description: IPW60R099 - 600V CoolMOS N-Chann Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY7C024-15AXC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 100TQFP Memory Organization: 4K x 16 Access Time: 15 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Part Status: Obsolete Supplier Device Package: 100-TQFP (14x14) Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 64Kbit Mounting Type: Surface Mount DigiKey Programmable: Not Verified Package / Case: 100-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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D3900U45X172XPSA1 | Infineon Technologies |
Description: HIGH POWER THYR / DIO BG-D17226K Part Status: Active Packaging: Tray |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SGW20N60FKSA1 | Infineon Technologies |
Description: IGBT NPT 600V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 36ns/225ns Switching Energy: 440µJ (on), 330µJ (off) Test Condition: 400V, 20A, 16Ohm, 15V Gate Charge: 100 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 179 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1ED020I12FXUMA2 | Infineon Technologies |
Description: DGT ISO 4.5KV 1CH GT DVR DSO16 Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 4500Vrms Supplier Device Package: PG-DSO-16-15 Rise / Fall Time (Typ): 60ns, 60ns Part Status: Not For New Designs Number of Channels: 1 Voltage - Output Supply: 13V ~ 20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF300P226 | Infineon Technologies |
Description: MOSFET N-CH 300V 100A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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MB3773PF-G-BND-JN-ERE1 | Infineon Technologies |
Description: IC SUPERVISOR 1 CHANNEL 8SOP DigiKey Programmable: Not Verified Part Status: Obsolete Supplier Device Package: 8-SOP Voltage - Threshold: 4.2V Reset Timeout: 50ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active High/Active Low Type: Power Supply Monitor Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MB3773PF-G-BND-JN-EFE1 | Infineon Technologies |
Description: IC SUPERVISOR 1 CHANNEL 8SOP DigiKey Programmable: Not Verified Part Status: Obsolete Supplier Device Package: 8-SOP Voltage - Threshold: 4.2V Reset Timeout: 50ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active High/Active Low Type: Power Supply Monitor Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MB3773PF-G-BND-JNE1 | Infineon Technologies |
Description: IC SUPERVISOR 1 CHANNEL 8SOP DigiKey Programmable: Not Verified Part Status: Obsolete Supplier Device Package: 8-SOP Voltage - Threshold: 4.2V Reset Timeout: 50ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C (TA) Reset: Active High/Active Low Type: Power Supply Monitor Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
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CDM10V3XTSA1 | Infineon Technologies |
Description: IC DIMMER FLEXIBLE SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: General Purpose Internal Switch(s): No Supplier Device Package: PG-SOT23-6 Dimming: Yes Voltage - Supply (Min): 11V Voltage - Supply (Max): 25V Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CDM10V3XTSA1 | Infineon Technologies |
Description: IC DIMMER FLEXIBLE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: General Purpose Internal Switch(s): No Supplier Device Package: PG-SOT23-6 Dimming: Yes Voltage - Supply (Min): 11V Voltage - Supply (Max): 25V Part Status: Active |
auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW90R340C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO247-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-21 Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4246AZA-M445 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Number of I/O: 51 Part Status: Active Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8CLED02-16SXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, IrDA, SPI, UART/USART RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 5.25V Controller Series: CY8CLED Program Memory Type: FLASH (4KB) Applications: HB LED Controller Core Processor: M8C Supplier Device Package: 16-SOIC Part Status: Obsolete Number of I/O: 12 DigiKey Programmable: Not Verified |
auf Bestellung 664 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R125CFD7ATMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 420µA Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB65R125CFD7ATMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 420µA Power Dissipation (Max): 98W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPT65R125CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 650 V Part Status: Active Supplier Device Package: PG-HSOF-8-3 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R120C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 19A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 553 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R120P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 26A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP048N04NGXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 70A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLR3110ZTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP030N10N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CPROTO-064S1-SB | Infineon Technologies |
Description: PSOC 64 SECURE BOOT PROTOTYPING Packaging: Bulk For Use With/Related Products: PSoC 64 Type: Transceiver Contents: Board(s) Utilized IC / Part: PSoC 64 Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CPROTO-064B0S3 | Infineon Technologies |
Description: PSOC 64 SECURE BOOT PROTOTYPING Packaging: Bulk For Use With/Related Products: PSoC 64 Type: Transceiver Contents: Board(s), Cable(s) Utilized IC / Part: PSoC 64 Supplied Contents: Board(s), Cable(s) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C6137BZI-F34 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124BGA Packaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Part Status: Active Number of I/O: 104 DigiKey Programmable: Not Verified |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4014SXI-420T | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 8SOIC Speed: 16MHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 5 Part Status: Active Supplier Device Package: 8-SOIC Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I2C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4014SXI-420T | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 8SOIC DigiKey Programmable: Not Verified Number of I/O: 5 Part Status: Active Supplier Device Package: 8-SOIC Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I2C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 7063 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4045LQI-S411 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 24QFN Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 19 DigiKey Programmable: Not Verified |
auf Bestellung 4892 Stücke: Lieferzeit 10-14 Tag (e) |
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BCX42E6433HTMA1 | Infineon Technologies |
Description: TRANS PNP 125V 0.8A PG-SOT23 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 125 V Current - Collector (Ic) (Max): 800 mA Part Status: Last Time Buy Supplier Device Package: PG-SOT23 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPTG044N15NM5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-HSOG-8 Vgs(th) (Max) @ Id: 4.6V @ 235µA Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IDB30E60ATMA1 |
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Hersteller: Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDP30E60XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 52.3A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 600V 52.3A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDW30E60AFKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIDW30E60 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A TO247-3
Part Status: Active
Packaging: Tube
Description: DIODE GEN PURP 600V 30A TO247-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKB20N65EH5ATMA1 |
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.85 EUR |
| 10+ | 4.47 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.56 EUR |
| CY8C4147AZS-S465T |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Grade: Automotive
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Number of I/O: 54
Part Status: Active
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Grade: Automotive
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Number of I/O: 54
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZS-S465 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR5410TRRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| TLE5045ICR100HALA1 |
|
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 8+ | 2.65 EUR |
| 10+ | 2.52 EUR |
| 25+ | 2.38 EUR |
| 50+ | 2.27 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.92 EUR |
| TLE5045ICR100HALA1 |
|
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5012BE9000MS2GOTOBO1 |
|
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5045ICIJGR050HALA1 |
|
Hersteller: Infineon Technologies
Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.61 EUR |
| 7+ | 3.2 EUR |
| 10+ | 3.05 EUR |
| 25+ | 2.87 EUR |
| 50+ | 2.74 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.32 EUR |
| TLE5045ICIJGR050HALA1 |
|
Hersteller: Infineon Technologies
Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Technology: Magnetoresistive
Description: SEN MR ANALOG CURRENT PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Technology: Magnetoresistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5046ICPWM2R100HALA1 |
|
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 7+ | 3.3 EUR |
| 10+ | 3.14 EUR |
| 25+ | 2.95 EUR |
| 50+ | 2.83 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.39 EUR |
| TLE5046ICPWM2R100HALA1 |
|
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE50451ICR075XAMA1 |
|
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: Single
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: Single
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.16 EUR |
| 10+ | 5.38 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.2 EUR |
| TLE5046ICPWM2R050HALA1 |
|
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: SEN MR PWM PG-SSO-2-1
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 7+ | 3.3 EUR |
| 10+ | 3.14 EUR |
| 25+ | 2.95 EUR |
| 50+ | 2.83 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.39 EUR |
| TLE5046ICPWM2R050HALA1 |
|
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-2-1
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Qualification: AEC-Q100
Grade: Automotive
Description: SEN MR PWM PG-SSO-2-1
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE50461ICAKLRXAMA1 |
|
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.15 EUR |
| 10+ | 4 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.24 EUR |
| TLE50461ICAKLRXAMA1 |
|
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5046ICAKERRHALA1 |
|
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 7+ | 3.3 EUR |
| 10+ | 3.14 EUR |
| 25+ | 2.95 EUR |
| 50+ | 2.83 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.39 EUR |
| TLE5046ICAKERRHALA1 |
|
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5012BE1000MS2GOTOBO1 |
|
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 57.26 EUR |
| TLE5012BE5000MS2GOTOBO1 |
|
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC218N06N3X7SA1 |
|
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6195 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R099P7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 1111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.42 EUR |
| 50+ | 4.87 EUR |
| 100+ | 4.43 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.42 EUR |
| IPA60R099P6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.01 EUR |
| 50+ | 4.7 EUR |
| 100+ | 4.28 EUR |
| IPP60R099C6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 600V 37.9A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.98 EUR |
| 50+ | 6.93 EUR |
| 100+ | 6.34 EUR |
| 500+ | 5.32 EUR |
| 1000+ | 4.99 EUR |
| IPP60R099C7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO220-3
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Description: MOSFET N-CH 600V 22A TO220-3
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI60R099CPXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 600V 31A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.77 EUR |
| 10+ | 13.53 EUR |
| 100+ | 11.28 EUR |
| 500+ | 9.95 EUR |
| IPW60R099ZH |
Hersteller: Infineon Technologies
Description: IPW60R099 - 600V CoolMOS N-Chann
Part Status: Obsolete
Packaging: Bulk
Description: IPW60R099 - 600V CoolMOS N-Chann
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C024-15AXC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Memory Organization: 4K x 16
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 100-LQFP
Packaging: Tray
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Memory Organization: 4K x 16
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| D3900U45X172XPSA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-D17226K
Part Status: Active
Packaging: Tray
Description: HIGH POWER THYR / DIO BG-D17226K
Part Status: Active
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6597.55 EUR |
| SGW20N60FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1ED020I12FXUMA2 |
|
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF300P226 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.39 EUR |
| MB3773PF-G-BND-JN-ERE1 |
|
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MB3773PF-G-BND-JN-EFE1 |
|
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MB3773PF-G-BND-JNE1 |
|
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Description: IC SUPERVISOR 1 CHANNEL 8SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: 8-SOP
Voltage - Threshold: 4.2V
Reset Timeout: 50ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active High/Active Low
Type: Power Supply Monitor
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDM10V3XTSA1 |
|
Hersteller: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDM10V3XTSA1 |
|
Hersteller: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
auf Bestellung 2915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 34+ | 0.63 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.49 EUR |
| 250+ | 0.45 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.42 EUR |
| IPW90R340C3XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-21
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 900V 15A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-21
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.82 EUR |
| 30+ | 5.37 EUR |
| CY8C4246AZA-M445 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Number of I/O: 51
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Number of I/O: 51
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8CLED02-16SXI |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, IrDA, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (4KB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, IrDA, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (4KB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.41 EUR |
| 10+ | 4.83 EUR |
| 48+ | 4.2 EUR |
| 144+ | 3.9 EUR |
| 288+ | 3.76 EUR |
| 528+ | 3.65 EUR |
| IPB65R125CFD7ATMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IPB65R125CFD7ATMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Description: HIGH POWER_NEW
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPT65R125CFD7XTMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: PG-HSOF-8-3
Description: HIGH POWER_NEW
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: PG-HSOF-8-3
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 3 EUR |
| IPP60R120C7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 600V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.08 EUR |
| 50+ | 5.25 EUR |
| 100+ | 4.78 EUR |
| 500+ | 3.96 EUR |
| IPW60R120P7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP048N04NGXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 70A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLR3110ZTRRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP030N10N3GXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.97 EUR |
| CY8CPROTO-064S1-SB |
|
Hersteller: Infineon Technologies
Description: PSOC 64 SECURE BOOT PROTOTYPING
Packaging: Bulk
For Use With/Related Products: PSoC 64
Type: Transceiver
Contents: Board(s)
Utilized IC / Part: PSoC 64
Supplied Contents: Board(s)
Part Status: Active
Description: PSOC 64 SECURE BOOT PROTOTYPING
Packaging: Bulk
For Use With/Related Products: PSoC 64
Type: Transceiver
Contents: Board(s)
Utilized IC / Part: PSoC 64
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 126.29 EUR |
| CY8CPROTO-064B0S3 |
|
Hersteller: Infineon Technologies
Description: PSOC 64 SECURE BOOT PROTOTYPING
Packaging: Bulk
For Use With/Related Products: PSoC 64
Type: Transceiver
Contents: Board(s), Cable(s)
Utilized IC / Part: PSoC 64
Supplied Contents: Board(s), Cable(s)
Part Status: Active
Description: PSOC 64 SECURE BOOT PROTOTYPING
Packaging: Bulk
For Use With/Related Products: PSoC 64
Type: Transceiver
Contents: Board(s), Cable(s)
Utilized IC / Part: PSoC 64
Supplied Contents: Board(s), Cable(s)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C6137BZI-F34 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 104
DigiKey Programmable: Not Verified
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.58 EUR |
| 10+ | 14.48 EUR |
| 25+ | 13.46 EUR |
| 100+ | 12.33 EUR |
| 260+ | 11.78 EUR |
| CY8C4014SXI-420T |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 8SOIC
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 5
Part Status: Active
Supplier Device Package: 8-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Description: IC MCU 32BIT 16KB FLASH 8SOIC
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 5
Part Status: Active
Supplier Device Package: 8-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.78 EUR |
| CY8C4014SXI-420T |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 8SOIC
DigiKey Programmable: Not Verified
Number of I/O: 5
Part Status: Active
Supplier Device Package: 8-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 16KB FLASH 8SOIC
DigiKey Programmable: Not Verified
Number of I/O: 5
Part Status: Active
Supplier Device Package: 8-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 7063 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 2.86 EUR |
| 25+ | 2.61 EUR |
| 100+ | 2.33 EUR |
| 250+ | 2.2 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 2.05 EUR |
| CY8C4045LQI-S411 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
DigiKey Programmable: Not Verified
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.3 EUR |
| 10+ | 3.86 EUR |
| 25+ | 3.64 EUR |
| 80+ | 3.17 EUR |
| 230+ | 3 EUR |
| 490+ | 2.86 EUR |
| BCX42E6433HTMA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PNP 125V 0.8A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 125V 0.8A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTG044N15NM5ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH