Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149455) > Seite 558 nach 2491
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFB7530PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
auf Bestellung 1406 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CY7C65217-24LTXI | Infineon Technologies |
Description: IC USB TO SERIAL BRIDGE 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: I2C, UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 4842 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CY7C65211-24LTXIT | Infineon Technologies |
Description: IC USB TO SERIAL BRIDGE 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Function: Bridge, USB to I2C Interface: UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
CY7C65211-24LTXIT | Infineon Technologies |
Description: IC USB TO SERIAL BRIDGE 24QFNPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Bridge, USB to I2C Interface: UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 4227 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
S80KS5122GABHV020 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 311 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
S80KS5122GABHI020 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
S80KS5122GABHB020 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CYT2B63BADQ0AZSGS | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 22x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
auf Bestellung 1548 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CYT2B63BADQ0AZEGS | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 22x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
auf Bestellung 1526 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CYT2B63BADQ0AZEGST | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 22x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
S80KS5122GABHV023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
S80KS5122GABHM023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
S80KS2563GABHV023 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
S80KS5122GABHB023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
S80KS5122GABHI023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
S80KS5122GABHA023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
IDB30E60ATMA1 | Infineon Technologies |
Description: DIODE GP 600V 52.3A TO263-3-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126 ns Technology: Standard Current - Average Rectified (Io): 52.3A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
IDP30E60XKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 52.3A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126 ns Technology: Standard Current - Average Rectified (Io): 52.3A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
IDW30E60AFKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AIDW30E60 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A TO247-3 Packaging: Tube Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
IKB20N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 38A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 560µJ (on), 130µJ (off) Test Condition: 400V, 20A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CY8C4147AZS-S465T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 54 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
CY8C4147AZS-S465 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 54 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
IRFR5410TRRPBF | Infineon Technologies |
Description: MOSFET P-CH 100V 13A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE5045ICR100HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2Packaging: Cut Tape (CT) Features: Selectable Scale, Temperature Compensated Output Type: PWM Axis: Single Operating Temperature: -40°C ~ 125°C Technology: Hall Effect Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5045ICR100HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2Packaging: Tape & Box (TB) Features: Selectable Scale, Temperature Compensated Output Type: PWM Axis: Single Operating Temperature: -40°C ~ 125°C Technology: Hall Effect Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE5012BE9000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5045ICIJGR050HALA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS PG-SSO-2Packaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Output Type: Analog Current Mounting Type: Through Hole Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE5045ICIJGR050HALA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS PG-SSO-2Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Output Type: Analog Current Mounting Type: Through Hole Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5046ICPWM2R100HALA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1955 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5046ICPWM2R100HALA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE50451ICR075XAMA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5046ICPWM2R050HALA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 4.25V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5046ICPWM2R050HALA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 4.25V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE50461ICAKLRXAMA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE50461ICAKLRXAMA1 | Infineon Technologies |
Description: SPEED SENSORSPackaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE5046ICAKERRHALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2Packaging: Cut Tape (CT) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TLE5046ICAKERRHALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2Packaging: Tape & Box (TB) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE5012BE1000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
TLE5012BE5000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IPC218N06N3X7SA1 | Infineon Technologies |
Description: MV POWER MOSPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
IPP60R099P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Power Dissipation (Max): 117W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V |
auf Bestellung 936 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IPA60R099P6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A TO220-FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IPP60R099C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Supplier Device Package: PG-TO220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
auf Bestellung 1056 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IPP60R099C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 22A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
IPI60R099CPXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| IPW60R099ZH | Infineon Technologies |
Description: IPW60R099 - 600V CoolMOS N-Chann Packaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
CY7C024-15AXC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Part Status: Obsolete Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
D3900U45X172XPSA1 | Infineon Technologies |
Description: HIGH POWER THYR / DIO BG-D17226K Packaging: Tray Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
SGW20N60FKSA1 | Infineon Technologies |
Description: IGBT NPT 600V 40A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 36ns/225ns Switching Energy: 440µJ (on), 330µJ (off) Test Condition: 400V, 20A, 16Ohm, 15V Gate Charge: 100 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 179 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
1ED020I12FXUMA2 | Infineon Technologies |
Description: DGT ISO 4.5KV 1CH GT DVR DSO16Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 4500Vrms Supplier Device Package: PG-DSO-16-15 Rise / Fall Time (Typ): 60ns, 60ns Part Status: Not For New Designs Number of Channels: 1 Voltage - Output Supply: 13V ~ 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
IRF300P226 | Infineon Technologies |
Description: MOSFET N-CH 300V 100A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
MB3773PF-G-BND-JN-ERE1 | Infineon Technologies |
Description: IC SUPERVISOR 1 CHANNEL 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Power Supply Monitor Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 50ms Minimum Voltage - Threshold: 4.2V Supplier Device Package: 8-SOP Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
MB3773PF-G-BND-JN-EFE1 | Infineon Technologies |
Description: IC SUPERVISOR 1 CHANNEL 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Power Supply Monitor Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 50ms Minimum Voltage - Threshold: 4.2V Supplier Device Package: 8-SOP Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
MB3773PF-G-BND-JNE1 | Infineon Technologies |
Description: IC SUPERVISOR 1 CHANNEL 8SOPPackaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Power Supply Monitor Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 50ms Minimum Voltage - Threshold: 4.2V Supplier Device Package: 8-SOP Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
CDM10V3XTSA1 | Infineon Technologies |
Description: IC DIMMER FLEXIBLE SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: General Purpose Internal Switch(s): No Supplier Device Package: PG-SOT23-6 Dimming: Yes Voltage - Supply (Min): 11V Voltage - Supply (Max): 25V Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
CDM10V3XTSA1 | Infineon Technologies |
Description: IC DIMMER FLEXIBLE SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: General Purpose Internal Switch(s): No Supplier Device Package: PG-SOT23-6 Dimming: Yes Voltage - Supply (Min): 11V Voltage - Supply (Max): 25V Part Status: Active |
auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IPW90R340C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CY8C4246AZA-M445 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Part Status: Active Number of I/O: 51 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
CY8CLED02-16SXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, IrDA, SPI, UART/USART RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 5.25V Controller Series: CY8CLED Program Memory Type: FLASH (4KB) Applications: HB LED Controller Core Processor: M8C Supplier Device Package: 16-SOIC Part Status: Obsolete Number of I/O: 12 DigiKey Programmable: Not Verified |
auf Bestellung 664 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFB7530PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 1406 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.32 EUR |
| 50+ | 3.24 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.42 EUR |
| 1000+ | 2.26 EUR |
| CY7C65217-24LTXI |
![]() |
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4842 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 10+ | 3.83 EUR |
| 25+ | 3.62 EUR |
| 80+ | 3.14 EUR |
| 230+ | 2.98 EUR |
| 490+ | 2.83 EUR |
| CY7C65211-24LTXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65211-24LTXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4227 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.21 EUR |
| 10+ | 3.91 EUR |
| 25+ | 3.59 EUR |
| 100+ | 3.23 EUR |
| 250+ | 3.06 EUR |
| 500+ | 2.95 EUR |
| 1000+ | 2.87 EUR |
| S80KS5122GABHV020 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.78 EUR |
| 10+ | 13.74 EUR |
| 25+ | 13.31 EUR |
| 50+ | 13 EUR |
| 100+ | 12.68 EUR |
| S80KS5122GABHI020 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.71 EUR |
| 10+ | 12.75 EUR |
| S80KS5122GABHB020 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.91 EUR |
| 10+ | 15.72 EUR |
| 25+ | 15.23 EUR |
| 50+ | 14.87 EUR |
| 100+ | 14.5 EUR |
| 338+ | 13.87 EUR |
| CYT2B63BADQ0AZSGS |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
auf Bestellung 1548 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.06 EUR |
| 10+ | 14.13 EUR |
| 25+ | 13.14 EUR |
| 80+ | 12.21 EUR |
| 230+ | 11.59 EUR |
| 440+ | 11.29 EUR |
| CYT2B63BADQ0AZEGS |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
auf Bestellung 1526 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.48 EUR |
| 10+ | 14.46 EUR |
| 25+ | 13.45 EUR |
| 80+ | 12.5 EUR |
| 230+ | 11.87 EUR |
| 440+ | 11.56 EUR |
| CYT2B63BADQ0AZEGST |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS5122GABHV023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS5122GABHM023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS2563GABHV023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS5122GABHB023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS5122GABHI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS5122GABHA023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDB30E60ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GP 600V 52.3A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDP30E60XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 52.3A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 52.3A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDW30E60AFKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIDW30E60 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A TO247-3
Packaging: Tube
Part Status: Active
Description: DIODE GEN PURP 600V 30A TO247-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKB20N65EH5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.82 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.84 EUR |
| CY8C4147AZS-S465T |
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZS-S465 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR5410TRRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5045ICR100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 9+ | 2.08 EUR |
| 10+ | 1.98 EUR |
| 25+ | 1.86 EUR |
| 50+ | 1.78 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.5 EUR |
| TLE5045ICR100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Tape & Box (TB)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Tape & Box (TB)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5012BE9000MS2GOTOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 44.19 EUR |
| TLE5045ICIJGR050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5045ICIJGR050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 1.76 EUR |
| TLE5046ICPWM2R100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.58 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.87 EUR |
| TLE5046ICPWM2R100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE50451ICR075XAMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.28 EUR |
| 10+ | 4.13 EUR |
| 100+ | 2.91 EUR |
| 500+ | 2.64 EUR |
| TLE5046ICPWM2R050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.58 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.87 EUR |
| TLE5046ICPWM2R050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE50461ICAKLRXAMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.72 EUR |
| 10+ | 3.07 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.79 EUR |
| TLE50461ICAKLRXAMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5046ICAKERRHALA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Cut Tape (CT)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Cut Tape (CT)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.58 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.87 EUR |
| TLE5046ICAKERRHALA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5012BE1000MS2GOTOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5012BE5000MS2GOTOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 44.21 EUR |
| IPC218N06N3X7SA1 |
![]() |
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R099P7XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.39 EUR |
| 50+ | 3.23 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.43 EUR |
| IPA60R099P6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.71 EUR |
| 50+ | 4.02 EUR |
| 100+ | 3.67 EUR |
| IPP60R099C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 1056 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.36 EUR |
| 50+ | 4.97 EUR |
| 100+ | 4.55 EUR |
| 500+ | 3.84 EUR |
| IPP60R099C7XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI60R099CPXKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.25 EUR |
| 10+ | 11.37 EUR |
| 100+ | 9.48 EUR |
| 500+ | 8.36 EUR |
| IPW60R099ZH |
Hersteller: Infineon Technologies
Description: IPW60R099 - 600V CoolMOS N-Chann
Packaging: Bulk
Part Status: Obsolete
Description: IPW60R099 - 600V CoolMOS N-Chann
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C024-15AXC |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D3900U45X172XPSA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-D17226K
Packaging: Tray
Part Status: Active
Description: HIGH POWER THYR / DIO BG-D17226K
Packaging: Tray
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5544.16 EUR |
| SGW20N60FKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1ED020I12FXUMA2 |
![]() |
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF300P226 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.45 EUR |
| MB3773PF-G-BND-JN-ERE1 |
![]() |
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MB3773PF-G-BND-JN-EFE1 |
![]() |
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MB3773PF-G-BND-JNE1 |
![]() |
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDM10V3XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CDM10V3XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
auf Bestellung 2915 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 34+ | 0.53 EUR |
| 38+ | 0.47 EUR |
| 100+ | 0.41 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.35 EUR |
| IPW90R340C3XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.25 EUR |
| 30+ | 4.51 EUR |
| CY8C4246AZA-M445 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Part Status: Active
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Part Status: Active
Number of I/O: 51
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8CLED02-16SXI |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, IrDA, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (4KB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, IrDA, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (4KB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 664 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 4.07 EUR |
| 48+ | 3.54 EUR |
| 144+ | 3.29 EUR |
| 288+ | 3.17 EUR |
| 528+ | 3.08 EUR |






























