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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 Infineon Technologies Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4 Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 Infineon Technologies Infineon-IKB20N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1338f54917 Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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IRF1324PBF IRF1324PBF Infineon Technologies irf1324pbf.pdf?fileId=5546d462533600a4015355dac93318a7 Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
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BTS247ZE3062AATMA2 BTS247ZE3062AATMA2 Infineon Technologies Infineon-BTS247Z+E3062A-DS-v01_04-EN.pdf?fileId=5546d46249cd10140149f61898a21f1e&ack=t Description: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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KITA2GTC3775VTFTTOBO1 KITA2GTC3775VTFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC377 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Board Type: Evaluation Platform
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TFT
Part Status: Active
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TC377TP96F300SAALXUMA1 TC377TP96F300SAALXUMA1 Infineon Technologies 4_cip10525.pdf Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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CYBLE-222005-00 CYBLE-222005-00 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-222005-00 CYBLE-222005-00 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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EVAL-S25HL512T EVAL-S25HL512T Infineon Technologies Infineon-SEMPER-S25HL512T-memory-module-Quick-start-guide-GettingStarted-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017e71d9d5630088 Description: SEMPER S25HL512T MEMORY MODULE E
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S25HL512T
Platform: Pmod™
Part Status: Active
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IGU04N60TAKMA1 IGU04N60TAKMA1 Infineon Technologies Infineon-IGU04N60T-DS-v02_00-en.pdf?fileId=db3a304341e0aed00141e47349ff51f4 Description: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
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S70GL02GP11FFIR22 S70GL02GP11FFIR22 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
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S70GL02GP11FAIR12 S70GL02GP11FAIR12 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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S70GL02GP11FAIR13 S70GL02GP11FAIR13 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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TD104N14K0FHPSA1 Infineon Technologies INFN-S-A0004146847-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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T930S16TFBVT Infineon Technologies INFNS14669-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
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T930S16TFB Infineon Technologies INFNS14669-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TT251N16KOFHPSA1 Infineon Technologies INFNS30422-1.pdf?t.download=true&u=ovmfp3 Description: TT251PhaContrThyristModule
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
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PVG612APBF PVG612APBF Infineon Technologies pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
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500+13.43 EUR
1000+12.97 EUR
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IDH20G65C5XKSA2 IDH20G65C5XKSA2 Infineon Technologies IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6 Description: DIODE SIL CARB 650V 20A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
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IRF40B207 IRF40B207 Infineon Technologies irf40b207.pdf?fileId=5546d462533600a4015355e2f8fd1971 Description: MOSFET N-CH 40V 95A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 57A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
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IRFB4610PBF IRFB4610PBF Infineon Technologies irfs4610pbf.pdf?fileId=5546d462533600a40153563a3c4921b7 description Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Produkt ist nicht verfügbar
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BSO200P03SHXUMA1 BSO200P03SHXUMA1 Infineon Technologies BSO200P03S_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b42b596d0a5a Description: MOSFET P-CH 30V 7.4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Produkt ist nicht verfügbar
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BSO207PHXUMA1 BSO207PHXUMA1 Infineon Technologies BSO207PH.pdf Description: MOSFET 2P-CH 20V 5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYUSB2014-BZXCT CYUSB2014-BZXCT Infineon Technologies download Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB2014-BZXIT CYUSB2014-BZXIT Infineon Technologies download Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20704UA2KFFB1G CYW20704UA2KFFB1G Infineon Technologies Infineon-CYW20704_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e9f96802&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.1 +EDR
Current - Receiving: 38mA
Data Rate (Max): 3Mbps
Current - Transmitting: 38mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
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10+6.67 EUR
25+6.31 EUR
100+5.82 EUR
490+5.32 EUR
980+5.12 EUR
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IDWD20G120C5XKSA1 IDWD20G120C5XKSA1 Infineon Technologies Infineon-IDWD20G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d55c04548c Description: DIODE SIC 1.2KV 62A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1368pF @ 1V, 1MHz
Current - Average Rectified (Io): 62A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 166 µA @ 1200 V
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IPP020N06NAKSA1 IPP020N06NAKSA1 Infineon Technologies IPP020N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465ce627962f5 Description: MOSFET N-CH 60V 29A/120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
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TD162N16KOFHPSA2 TD162N16KOFHPSA2 Infineon Technologies Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.6KV 260A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.6 kV
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FF650R17IE4DB2BOSA1 FF650R17IE4DB2BOSA1 Infineon Technologies Infineon-FF650R17IE4D_B2-DS-v02_01-en_de.pdf?fileId=db3a304323b87bc20123db9e238c6fec Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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IPA65R380E6XKSA1 IPA65R380E6XKSA1 Infineon Technologies IPA65R380E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304328c6bd5c012912f08f1c0a3f Description: MOSFET N-CH 650V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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TT500N16KOFHPSA2 TT500N16KOFHPSA2 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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CYSHM35925I-M068LTI CYSHM35925I-M068LTI Infineon Technologies Infineon-CYSHM35925I-M068LTIT-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee28c166900&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: PSOC4
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 Infineon Technologies Infineon-IKW25N120H3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304340e762c80140ed6d64cf2df4 Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 290 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 348 Stücke:
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SKW25N120FKSA1 SKW25N120FKSA1 Infineon Technologies SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32 Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
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SGW25N120FKSA1 SGW25N120FKSA1 Infineon Technologies SGW25N120_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42837853d9e Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
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SPP06N80C3XKSA1 SPP06N80C3XKSA1 Infineon Technologies Infineon-SPP06N80C3-DS-v02_91-en.pdf?fileId=db3a304340f610c2014101afea0d5580 Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 5512 Stücke:
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7+2.62 EUR
50+1.45 EUR
100+1.43 EUR
500+1.36 EUR
1000+1.25 EUR
2000+1.18 EUR
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IRF1405STRRPBF IRF1405STRRPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
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BSZ0911LSATMA1 BSZ0911LSATMA1 Infineon Technologies Infineon-BSZ0911LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720eb167a17ce3 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
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10000+0.3 EUR
25000+0.29 EUR
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ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 Infineon Technologies Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
auf Bestellung 5000 Stücke:
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5000+2.78 EUR
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ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 Infineon Technologies Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
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100+3.4 EUR
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BSC007N04LS6SCATMA1 BSC007N04LS6SCATMA1 Infineon Technologies Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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BSC007N04LS6SCATMA1 BSC007N04LS6SCATMA1 Infineon Technologies Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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3+5.97 EUR
10+4.21 EUR
100+3.21 EUR
500+2.77 EUR
1000+2.75 EUR
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IMT65R260M1HXUMA1 IMT65R260M1HXUMA1 Infineon Technologies Infineon-IMT65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66da5d71d6 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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CY96F615RBPMC-GS-UJF4E1 CY96F615RBPMC-GS-UJF4E1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 160KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 37
Produkt ist nicht verfügbar
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IRAM136-1061A2 IRAM136-1061A2 Infineon Technologies IRAM136-1061A.pdf Description: IC MOSFET DRIVER
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
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CY7C1460KV25-167AXC CY7C1460KV25-167AXC Infineon Technologies Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
Produkt ist nicht verfügbar
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IHW30N110R3XKSA1 Infineon Technologies Infineon-IHW30N110R3-DataSheet-v02_01-EN.pdf?fileId=db3a304327b897500127b963455e0089 Description: IGBT TO-247-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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1EDN6550BXTSA1 1EDN6550BXTSA1 Infineon Technologies Infineon-1EDN6550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1ab4a7060a Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
Part Status: Active
DigiKey Programmable: Not Verified
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CYBL10563-68FLXIT CYBL10563-68FLXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-XFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBL10563-68FNXIT CYBL10563-68FNXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYBL10563-68FNXIT CYBL10563-68FNXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
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CYBL10161-68FNXIT CYBL10161-68FNXIT Infineon Technologies download Description: IC TRUETOUCH CAPSENSE
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 68-WLCSP (3.52x3.91)
Part Status: Active
Produkt ist nicht verfügbar
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IPA083N10N5XKSA1 IPA083N10N5XKSA1 Infineon Technologies Infineon-IPA083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae2aab965048b Description: MOSFET N-CH 100V 44A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 44A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
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10+2.88 EUR
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BCX5616H6327XTSA1 BCX5616H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120ADJBOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS4120D0EP
Packaging: Bulk
Voltage - Output: 3V ~ 10V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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XMC4300F100K256AAXQMA1 XMC4300F100K256AAXQMA1 Infineon Technologies Infineon-XMC4300-DS-v01_00-EN.pdf?fileId=5546d462525dbac40152abc34fde16d8 Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 73
DigiKey Programmable: Not Verified
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1+31.7 EUR
10+25.31 EUR
90+22.08 EUR
180+21.41 EUR
270+21.07 EUR
540+20.58 EUR
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WLC1150-68LQXQ WLC1150-68LQXQ Infineon Technologies Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6 Description: WLC IC
Packaging: Tube
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
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WLC1150-68LQXQT WLC1150-68LQXQT Infineon Technologies Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6 Description: WLC IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
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IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
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IKP20N65H5XKSA1 Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4
IKP20N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
50+2.6 EUR
100+2.35 EUR
Mindestbestellmenge: 4
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IKB20N65EH5ATMA1 Infineon-IKB20N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1338f54917
IKB20N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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IRF1324PBF irf1324pbf.pdf?fileId=5546d462533600a4015355dac93318a7
IRF1324PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
auf Bestellung 918 Stücke:
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4+5.16 EUR
50+2.63 EUR
100+2.47 EUR
500+2.01 EUR
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BTS247ZE3062AATMA2 Infineon-BTS247Z+E3062A-DS-v01_04-EN.pdf?fileId=5546d46249cd10140149f61898a21f1e&ack=t
BTS247ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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KITA2GTC3775VTFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3775VTFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC377 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Board Type: Evaluation Platform
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TFT
Part Status: Active
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1+451.46 EUR
10+450.43 EUR
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TC377TP96F300SAALXUMA1 4_cip10525.pdf
TC377TP96F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.73 EUR
10+56.14 EUR
25+53 EUR
100+49.54 EUR
250+47.9 EUR
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CYBLE-222005-00 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-00
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-222005-00 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-00
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL-S25HL512T Infineon-SEMPER-S25HL512T-memory-module-Quick-start-guide-GettingStarted-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017e71d9d5630088
EVAL-S25HL512T
Hersteller: Infineon Technologies
Description: SEMPER S25HL512T MEMORY MODULE E
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S25HL512T
Platform: Pmod™
Part Status: Active
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1+45.36 EUR
10+42.66 EUR
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IGU04N60TAKMA1 Infineon-IGU04N60T-DS-v02_00-en.pdf?fileId=db3a304341e0aed00141e47349ff51f4
IGU04N60TAKMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
auf Bestellung 1472 Stücke:
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Anzahl Preis
8+2.25 EUR
75+1 EUR
150+0.89 EUR
525+0.74 EUR
1050+0.67 EUR
Mindestbestellmenge: 8
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S70GL02GP11FFIR22 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FFIR22
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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S70GL02GP11FAIR12 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR12
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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S70GL02GP11FAIR13 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR13
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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TD104N14K0FHPSA1 INFN-S-A0004146847-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
auf Bestellung 5 Stücke:
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Anzahl Preis
3+180.49 EUR
Mindestbestellmenge: 3
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T930S16TFBVT INFNS14669-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
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Anzahl Preis
2+395.09 EUR
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T930S16TFB INFNS14669-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TT251N16KOFHPSA1 INFNS30422-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: TT251PhaContrThyristModule
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
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Anzahl Preis
2+301.83 EUR
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PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
PVG612APBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.36 EUR
10+16.35 EUR
25+15.62 EUR
50+15.08 EUR
100+14.56 EUR
250+13.91 EUR
500+13.43 EUR
1000+12.97 EUR
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IDH20G65C5XKSA2 IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6
IDH20G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
auf Bestellung 599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.95 EUR
50+7.58 EUR
100+6.94 EUR
500+6.22 EUR
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IRF40B207 irf40b207.pdf?fileId=5546d462533600a4015355e2f8fd1971
IRF40B207
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 95A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 57A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
auf Bestellung 1625 Stücke:
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Anzahl Preis
11+1.71 EUR
50+0.9 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 11
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IRFB4610PBF description irfs4610pbf.pdf?fileId=5546d462533600a40153563a3c4921b7
IRFB4610PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Produkt ist nicht verfügbar
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BSO200P03SHXUMA1 BSO200P03S_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b42b596d0a5a
BSO200P03SHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 7.4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Produkt ist nicht verfügbar
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BSO207PHXUMA1 BSO207PH.pdf
BSO207PHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYUSB2014-BZXCT download
CYUSB2014-BZXCT
Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB2014-BZXIT download
CYUSB2014-BZXIT
Hersteller: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20704UA2KFFB1G Infineon-CYW20704_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e9f96802&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20704UA2KFFB1G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.1 +EDR
Current - Receiving: 38mA
Data Rate (Max): 3Mbps
Current - Transmitting: 38mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4586 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+6.67 EUR
25+6.31 EUR
100+5.82 EUR
490+5.32 EUR
980+5.12 EUR
1470+5.01 EUR
Mindestbestellmenge: 3
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IDWD20G120C5XKSA1 Infineon-IDWD20G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d55c04548c
IDWD20G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 62A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1368pF @ 1V, 1MHz
Current - Average Rectified (Io): 62A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 166 µA @ 1200 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.87 EUR
30+8.61 EUR
120+8.53 EUR
Mindestbestellmenge: 2
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IPP020N06NAKSA1 IPP020N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465ce627962f5
IPP020N06NAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
50+2.94 EUR
100+2.88 EUR
Mindestbestellmenge: 4
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TD162N16KOFHPSA2 Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5
TD162N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.6 kV
auf Bestellung 9 Stücke:
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Anzahl Preis
1+234.41 EUR
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FF650R17IE4DB2BOSA1 Infineon-FF650R17IE4D_B2-DS-v02_01-en_de.pdf?fileId=db3a304323b87bc20123db9e238c6fec
FF650R17IE4DB2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 4 Stücke:
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Anzahl Preis
1+862.14 EUR
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IPA65R380E6XKSA1 IPA65R380E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304328c6bd5c012912f08f1c0a3f
IPA65R380E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TT500N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
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Anzahl Preis
1+452.28 EUR
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CYSHM35925I-M068LTI Infineon-CYSHM35925I-M068LTIT-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee28c166900&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYSHM35925I-M068LTI
Hersteller: Infineon Technologies
Description: PSOC4
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 9 Stücke:
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Anzahl Preis
2+9.86 EUR
Mindestbestellmenge: 2
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IKW25N120H3FKSA1 Infineon-IKW25N120H3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304340e762c80140ed6d64cf2df4
IKW25N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 290 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.93 EUR
30+5.66 EUR
120+4.73 EUR
Mindestbestellmenge: 2
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SKW25N120FKSA1 SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32
SKW25N120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
Produkt ist nicht verfügbar
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SGW25N120FKSA1 SGW25N120_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42837853d9e
SGW25N120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
Produkt ist nicht verfügbar
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SPP06N80C3XKSA1 Infineon-SPP06N80C3-DS-v02_91-en.pdf?fileId=db3a304340f610c2014101afea0d5580
SPP06N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 5512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
50+1.45 EUR
100+1.43 EUR
500+1.36 EUR
1000+1.25 EUR
2000+1.18 EUR
Mindestbestellmenge: 7
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IRF1405STRRPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Produkt ist nicht verfügbar
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BSZ0911LSATMA1 Infineon-BSZ0911LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720eb167a17ce3
BSZ0911LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
10000+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 5000
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ISC037N12NM6ATMA1 Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389
ISC037N12NM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.78 EUR
Mindestbestellmenge: 5000
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ISC037N12NM6ATMA1 Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389
ISC037N12NM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
auf Bestellung 9319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+4.32 EUR
100+3.4 EUR
Mindestbestellmenge: 3
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BSC007N04LS6SCATMA1 Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88
BSC007N04LS6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Produkt ist nicht verfügbar
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BSC007N04LS6SCATMA1 Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88
BSC007N04LS6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.21 EUR
100+3.21 EUR
500+2.77 EUR
1000+2.75 EUR
Mindestbestellmenge: 3
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IMT65R260M1HXUMA1 Infineon-IMT65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66da5d71d6
IMT65R260M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
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CY96F615RBPMC-GS-UJF4E1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F615RBPMC-GS-UJF4E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 37
Produkt ist nicht verfügbar
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IRAM136-1061A2 IRAM136-1061A.pdf
IRAM136-1061A2
Hersteller: Infineon Technologies
Description: IC MOSFET DRIVER
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
Produkt ist nicht verfügbar
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CY7C1460KV25-167AXC Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me
CY7C1460KV25-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
Produkt ist nicht verfügbar
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IHW30N110R3XKSA1 Infineon-IHW30N110R3-DataSheet-v02_01-EN.pdf?fileId=db3a304327b897500127b963455e0089
Hersteller: Infineon Technologies
Description: IGBT TO-247-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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1EDN6550BXTSA1 Infineon-1EDN6550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1ab4a7060a
1EDN6550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBL10563-68FLXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-68FLXIT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-XFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBL10563-68FNXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-68FNXIT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYBL10563-68FNXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-68FNXIT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYBL10161-68FNXIT download
CYBL10161-68FNXIT
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 68-WLCSP (3.52x3.91)
Part Status: Active
Produkt ist nicht verfügbar
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IPA083N10N5XKSA1 Infineon-IPA083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae2aab965048b
IPA083N10N5XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 44A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 44A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.88 EUR
100+1.99 EUR
Mindestbestellmenge: 4
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BCX5616H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5616H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120ADJBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EP
Packaging: Bulk
Voltage - Output: 3V ~ 10V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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XMC4300F100K256AAXQMA1 Infineon-XMC4300-DS-v01_00-EN.pdf?fileId=5546d462525dbac40152abc34fde16d8
XMC4300F100K256AAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 73
DigiKey Programmable: Not Verified
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.7 EUR
10+25.31 EUR
90+22.08 EUR
180+21.41 EUR
270+21.07 EUR
540+20.58 EUR
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WLC1150-68LQXQ Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6
WLC1150-68LQXQ
Hersteller: Infineon Technologies
Description: WLC IC
Packaging: Tube
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
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WLC1150-68LQXQT Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6
WLC1150-68LQXQT
Hersteller: Infineon Technologies
Description: WLC IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
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