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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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4+6.18 EUR
50+3.07 EUR
100+2.77 EUR
500+2.25 EUR
1000+2.08 EUR
2000+1.94 EUR
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 Infineon Technologies IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c Description: MOSFET N-CH 250V 25A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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4+6.33 EUR
50+3.17 EUR
100+2.86 EUR
500+2.32 EUR
1000+2.14 EUR
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IPA045N10N3GXKSA1 IPA045N10N3GXKSA1 Infineon Technologies IPA045N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122600237f57ece Description: MOSFET N-CH 100V 64A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 64A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 Infineon Technologies Infineon-IPP045N10N3%20G-DS-v02_09-EN.pdf?fileId=5546d4625d5945ed015d9885241104ce Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
auf Bestellung 3336 Stücke:
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3+7.64 EUR
50+3.88 EUR
100+3.52 EUR
500+2.88 EUR
1000+2.68 EUR
2000+2.5 EUR
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IAUA180N08S5N026AUMA1 IAUA180N08S5N026AUMA1 Infineon Technologies Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1879 Stücke:
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10+4.25 EUR
100+2.98 EUR
500+2.61 EUR
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CYW54591RKUBGT CYW54591RKUBGT Infineon Technologies CYW5459x.PDF Description: IC RF TXRX+MCU BLE 194WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW54591RKUBGT CYW54591RKUBGT Infineon Technologies CYW5459x.PDF Description: IC RF TXRX+MCU BLE 194WLBGA
Packaging: Cut Tape (CT)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
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25+18.61 EUR
100+17.21 EUR
250+16.36 EUR
500+15.77 EUR
1000+15.33 EUR
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TC223L16F133NACLXUMA1 TC223L16F133NACLXUMA1 Infineon Technologies Power_Sensing_Selection_Guide_2021.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-TC297TP-128F300N BC SAK-TC297TP-128F300N BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 768K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 728K x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC297TP128F300SBBKXUMA2 TC297TP128F300SBBKXUMA2 Infineon Technologies Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 72x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 728K x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC297TP128F300SBCKXUMA1 TC297TP128F300SBCKXUMA1 Infineon Technologies infineon-tc29xbc-datasheet-en.pdf Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
DigiKey Programmable: Not Verified
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1000+57.87 EUR
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FS10R06VL4_B2 Infineon Technologies INFNS20560-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1-1
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
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SCREWCLAMPEASY750GEXOXA1 SCREWCLAMPEASY750GEXOXA1 Infineon Technologies Infineon-Clamp%20Easy750GEO%20-ATI-v02_05-EN.pdf?fileId=5546d462525dbac401532bcb2a50704d Description: EASY ACCESSORY
Packaging: Tray
Type: Mount
Part Status: Active
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11+2.03 EUR
15+1.46 EUR
25+1.32 EUR
200+1.11 EUR
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IPB023N04NF2SATMA1 IPB023N04NF2SATMA1 Infineon Technologies Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa Description: TRENCH <= 40V
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Produkt ist nicht verfügbar
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IPB023N04NF2SATMA1 IPB023N04NF2SATMA1 Infineon Technologies Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRFI4410ZPBF IRFI4410ZPBF Infineon Technologies infineon-irfi4410z-ds-en.pdf Description: MOSFET N-CH 100V 43A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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S29GL128S10FHI010 S29GL128S10FHI010 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1749 Stücke:
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2+13.91 EUR
10+12.96 EUR
25+12.57 EUR
50+12.27 EUR
180+11.72 EUR
360+11.44 EUR
540+11.26 EUR
1080+10.98 EUR
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CYBT-483056-02 CYBT-483056-02 Infineon Technologies Infineon-CYBT-483056-02_CYBT-483062-02_EZ-BT_XR_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c8b972a8 Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
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1+26.85 EUR
10+23.35 EUR
25+22.13 EUR
100+20.48 EUR
250+19.48 EUR
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CYBT-423054-02 CYBT-423054-02 Infineon Technologies Infineon-CYBT-423054-02_CYBT-423060-02_EZ-BT_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9d97472bd Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
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25+18.9 EUR
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CYBT-423054-EVAL CYBT-423054-EVAL Infineon Technologies Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-423054-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0322651a5b Description: CYBT-423054-EVAL
Packaging: Tray
For Use With/Related Products: CYBT-423054-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
Part Status: Active
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1+98.08 EUR
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CYBT-483056-EVAL CYBT-483056-EVAL Infineon Technologies Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-483056-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f032d171a6f Description: CYBT-483056-EVAL
Packaging: Tray
For Use With/Related Products: CYBT-483056-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s)
Utilized IC / Part: CYBT-483056-02
Supplied Contents: Board(s)
Part Status: Active
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CY9BF429SPMC-GK7E1 CY9BF429SPMC-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 122
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF429TABGL-GK7E1 CY9BF429TABGL-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF418TBGL-GK7E1 CY9BF418TBGL-GK7E1 Infineon Technologies Infineon-CY9B410T_Series_32_bit_ARM_Cortex_-M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0cae76684&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF428TABGL-GK7E1 CY9BF428TABGL-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.0625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128S10FHB010 S29GL128S10FHB010 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL128S10FAIV23 S29GL128S10FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10GHIV20 S29GL128S10GHIV20 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56FBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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260+8.62 EUR
520+8.07 EUR
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S29GL128S10FHB013 S29GL128S10FHB013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FAIV13 S29GL128S10FAIV13 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FHSS10 S29GL128S10FHSS10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FHIV13 S29GL128S10FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128S10FHIV23 S29GL128S10FHIV23 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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XMC4100F64K128BAXQMA1 XMC4100F64K128BAXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
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2+15.77 EUR
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25+11.34 EUR
160+10.12 EUR
320+9.79 EUR
640+9.53 EUR
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IRFB3306PBF IRFB3306PBF Infineon Technologies irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
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1000+1.5 EUR
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CY62146ELL-45ZSXIT CY62146ELL-45ZSXIT Infineon Technologies Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Memory Organization: 256K x 16
Access Time: 45 ns
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
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CY62146ELL-45ZSXIT CY62146ELL-45ZSXIT Infineon Technologies Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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500+16.1 EUR
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IPAW60R280P7SE8228XKSA1 IPAW60R280P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 24W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPAW60R600P7SE8228XKSA1 IPAW60R600P7SE8228XKSA1 Infineon Technologies infineon-ipaw60r600p7s-ds-en.pdf Description: MOSFET N-CH 600V 6A TO220
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Produkt ist nicht verfügbar
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IPAW60R360P7SE8228XKSA1 IPAW60R360P7SE8228XKSA1 Infineon Technologies infineon-ipaw60r360p7s-datasheet-en.pdf Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
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KP226N3622XTMA1 KP226N3622XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Part Status: Active
Qualification: AEC-Q100
Grade: Automotive
Applications: Board Mount
Packaging: Tape & Reel (TR)
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KP226N3622XTMA1 KP226N3622XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Part Status: Active
Applications: Board Mount
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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100+8.2 EUR
500+6.87 EUR
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IRFP4332PBF IRFP4332PBF Infineon Technologies irfp4332pbf.pdf?fileId=5546d462533600a40153562c58682013 description Description: MOSFET N-CH 250V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Produkt ist nicht verfügbar
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IPA65R400CEXKSA1 IPA65R400CEXKSA1 Infineon Technologies Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Description: MOSFET N-CH 650V TO220
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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50+1.48 EUR
100+1.34 EUR
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IPA50R280CEXKSA2 IPA50R280CEXKSA2 Infineon Technologies DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751 Description: MOSFET N-CH 500V 18.1A TO220
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 30.4W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 114 Stücke:
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ACCESSORY34362NOSA1 Infineon Technologies Description: ACCESSORY 34362NOSA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IDW40E65D2FKSA1 IDW40E65D2FKSA1 Infineon Technologies DS_IDW40E65D2_1_2.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433d68e984013d8226e10d7547 Description: DIODE STD 650V 80A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 1657 Stücke:
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4+5.71 EUR
30+3.07 EUR
120+2.49 EUR
510+2.06 EUR
1020+1.9 EUR
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IDP12E120XKSA1 IDP12E120XKSA1 Infineon Technologies IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b Description: DIODE STD 1200V 28A PGTO22022
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 63 Stücke:
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IDP30E65D2XKSA1 IDP30E65D2XKSA1 Infineon Technologies Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2 Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 140 Stücke:
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IRFBL3703 IRFBL3703 Infineon Technologies irfbl3703.pdf Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Produkt ist nicht verfügbar
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FF400R07KE4HOSA1 FF400R07KE4HOSA1 Infineon Technologies Infineon-FF400R07KE4-DS-v03_00-en_de.pdf?fileId=db3a30432d081e66012d097a5c6d001d Description: IGBT MODULE 650V 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
auf Bestellung 10 Stücke:
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FF200R17KE3HOSA1 FF200R17KE3HOSA1 Infineon Technologies Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c Description: IGBT MOD 1700V 310A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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BFP420H6801XTSA1 BFP420H6801XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP420H6801XTSA1 BFP420H6801XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 8325 Stücke:
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25+0.83 EUR
36+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.39 EUR
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D711N65TXPSA1 D711N65TXPSA1 Infineon Technologies Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f Description: DIODE STANDARD 6500V 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
Produkt ist nicht verfügbar
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S29GL01GS11TFV023 S29GL01GS11TFV023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4997A8DE0300XUMA1 TLE4997A8DE0300XUMA1 Infineon Technologies Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f Description: MAG SWITCH SPEED SENSOR 8TDSO
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TDSO-8-1
Current - Supply (Max): 10mA
Current - Output (Max): 1mA
Sensing Range: ±50mT ~ ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: 1.32kHz
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Axis: Single
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Programmable
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+5.21 EUR
Mindestbestellmenge: 2500 Stücke
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IKP39N65ES5XKSA1 IKP39N65ES5XKSA1 Infineon Technologies Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c Description: IGBT TRENCH FS 650V 62A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/120ns
Switching Energy: 800µJ (on), 500µJ (off)
Test Condition: 400V, 39A, 12.8Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
auf Bestellung 481 Stücke:
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4+6.58 EUR
50+3.32 EUR
100+3 EUR
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 603 Stücke:
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4+6.24 EUR
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100+2.81 EUR
500+2.28 EUR
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IPA60R060P7XKSA1 IPA60R060P7XKSA1 Infineon Technologies infineon-ipa60r060p7-datasheet-en.pdf Description: MOSFET N-CHANNEL 600V 48A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 684 Stücke:
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2+12.27 EUR
50+6.5 EUR
100+5.95 EUR
500+4.97 EUR
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IPP320N20N3GXKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPP320N20N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 2818 Stücke:
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4+6.18 EUR
50+3.07 EUR
100+2.77 EUR
500+2.25 EUR
1000+2.08 EUR
2000+1.94 EUR
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IPP600N25N3GXKSA1 IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c
IPP600N25N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
4+6.33 EUR
50+3.17 EUR
100+2.86 EUR
500+2.32 EUR
1000+2.14 EUR
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IPA045N10N3GXKSA1 IPA045N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122600237f57ece
IPA045N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 64A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 64A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 Infineon-IPP045N10N3%20G-DS-v02_09-EN.pdf?fileId=5546d4625d5945ed015d9885241104ce
IPP045N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
auf Bestellung 3336 Stücke:
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AnzahlPrivatkunde
3+7.64 EUR
50+3.88 EUR
100+3.52 EUR
500+2.88 EUR
1000+2.68 EUR
2000+2.5 EUR
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IAUA180N08S5N026AUMA1 Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35
IAUA180N08S5N026AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1879 Stücke:
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AnzahlPrivatkunde
4+6.5 EUR
10+4.25 EUR
100+2.98 EUR
500+2.61 EUR
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CYW54591RKUBGT CYW5459x.PDF
CYW54591RKUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 194WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW54591RKUBGT CYW5459x.PDF
CYW54591RKUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 194WLBGA
Packaging: Cut Tape (CT)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.6 EUR
10+19.64 EUR
25+18.61 EUR
100+17.21 EUR
250+16.36 EUR
500+15.77 EUR
1000+15.33 EUR
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TC223L16F133NACLXUMA1 Power_Sensing_Selection_Guide_2021.pdf
TC223L16F133NACLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-TC297TP-128F300N BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAK-TC297TP-128F300N BC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 768K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 728K x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC297TP128F300SBBKXUMA2
TC297TP128F300SBBKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 72x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 728K x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC297TP128F300SBCKXUMA1 infineon-tc29xbc-datasheet-en.pdf
TC297TP128F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
DigiKey Programmable: Not Verified
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1000+57.87 EUR
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FS10R06VL4_B2 INFNS20560-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1-1
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
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24+27.52 EUR
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SCREWCLAMPEASY750GEXOXA1 Infineon-Clamp%20Easy750GEO%20-ATI-v02_05-EN.pdf?fileId=5546d462525dbac401532bcb2a50704d
SCREWCLAMPEASY750GEXOXA1
Hersteller: Infineon Technologies
Description: EASY ACCESSORY
Packaging: Tray
Type: Mount
Part Status: Active
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
15+1.46 EUR
25+1.32 EUR
200+1.11 EUR
Mindestbestellmenge: 11 Stücke
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IPB023N04NF2SATMA1 Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa
IPB023N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Produkt ist nicht verfügbar
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IPB023N04NF2SATMA1 Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa
IPB023N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRFI4410ZPBF infineon-irfi4410z-ds-en.pdf
IRFI4410ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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S29GL128S10FHI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S10FHI010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1749 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.91 EUR
10+12.96 EUR
25+12.57 EUR
50+12.27 EUR
180+11.72 EUR
360+11.44 EUR
540+11.26 EUR
1080+10.98 EUR
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CYBT-483056-02 Infineon-CYBT-483056-02_CYBT-483062-02_EZ-BT_XR_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c8b972a8
CYBT-483056-02
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.85 EUR
10+23.35 EUR
25+22.13 EUR
100+20.48 EUR
250+19.48 EUR
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CYBT-423054-02 Infineon-CYBT-423054-02_CYBT-423060-02_EZ-BT_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9d97472bd
CYBT-423054-02
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.93 EUR
10+19.94 EUR
25+18.9 EUR
100+17.47 EUR
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CYBT-423054-EVAL Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-423054-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0322651a5b
CYBT-423054-EVAL
Hersteller: Infineon Technologies
Description: CYBT-423054-EVAL
Packaging: Tray
For Use With/Related Products: CYBT-423054-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+98.08 EUR
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CYBT-483056-EVAL Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-483056-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f032d171a6f
CYBT-483056-EVAL
Hersteller: Infineon Technologies
Description: CYBT-483056-EVAL
Packaging: Tray
For Use With/Related Products: CYBT-483056-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s)
Utilized IC / Part: CYBT-483056-02
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+93.15 EUR
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CY9BF429SPMC-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF429SPMC-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 122
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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CY9BF429TABGL-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF429TABGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF418TBGL-GK7E1 Infineon-CY9B410T_Series_32_bit_ARM_Cortex_-M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0cae76684&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF418TBGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1520 Stücke
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CY9BF428TABGL-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF428TABGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1520 Stücke
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S29GL128S10FHB010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S10FHB010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL128S10FAIV23 S29GL-S_PbPkg.pdf
S29GL128S10FAIV23
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128S10GHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10GHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56FBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2635 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.85 EUR
10+9.89 EUR
25+9.7 EUR
40+9.64 EUR
80+8.64 EUR
260+8.62 EUR
520+8.07 EUR
1040+7.74 EUR
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S29GL128S10FHB013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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S29GL128S10FAIV13 S29GL-S_PbPkg.pdf
S29GL128S10FAIV13
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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S29GL128S10FHSS10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL128S10FHSS10
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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S29GL128S10FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHIV13
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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S29GL128S10FHIV23 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S10FHIV23
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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XMC4100F64K128BAXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4100F64K128BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.77 EUR
10+12.22 EUR
25+11.34 EUR
160+10.12 EUR
320+9.79 EUR
640+9.53 EUR
Mindestbestellmenge: 2 Stücke
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IRFB3306PBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFB3306PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
auf Bestellung 4789 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.66 EUR
50+2.27 EUR
100+2.03 EUR
500+1.63 EUR
1000+1.5 EUR
2000+1.39 EUR
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CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Memory Organization: 256K x 16
Access Time: 45 ns
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.24 EUR
10+19.73 EUR
25+18.81 EUR
50+18.15 EUR
100+17.5 EUR
250+16.7 EUR
500+16.1 EUR
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IPAW60R280P7SE8228XKSA1
IPAW60R280P7SE8228XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 24W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IPAW60R600P7SE8228XKSA1 infineon-ipaw60r600p7s-ds-en.pdf
IPAW60R600P7SE8228XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Produkt ist nicht verfügbar
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IPAW60R360P7SE8228XKSA1 infineon-ipaw60r360p7s-datasheet-en.pdf
IPAW60R360P7SE8228XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Produkt ist nicht verfügbar
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KP226N3622XTMA1 fundamentals-of-power-semiconductors
KP226N3622XTMA1
Hersteller: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Part Status: Active
Qualification: AEC-Q100
Grade: Automotive
Applications: Board Mount
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+6.43 EUR
Mindestbestellmenge: 1500 Stücke
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KP226N3622XTMA1 fundamentals-of-power-semiconductors
KP226N3622XTMA1
Hersteller: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Part Status: Active
Applications: Board Mount
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.3 EUR
10+9.97 EUR
25+8.87 EUR
50+8.41 EUR
100+8.2 EUR
500+6.87 EUR
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IRFP4332PBF description irfp4332pbf.pdf?fileId=5546d462533600a40153562c58682013
IRFP4332PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Produkt ist nicht verfügbar
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IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
IPA65R400CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V TO220
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 105 Stücke:
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AnzahlPrivatkunde
7+3.42 EUR
50+1.48 EUR
100+1.34 EUR
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IPA50R280CEXKSA2 DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751
IPA50R280CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 18.1A TO220
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 30.4W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.98 EUR
50+1.42 EUR
100+1.26 EUR
Mindestbestellmenge: 8 Stücke
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ACCESSORY34362NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY 34362NOSA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IDW40E65D2FKSA1 DS_IDW40E65D2_1_2.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433d68e984013d8226e10d7547
IDW40E65D2FKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 650V 80A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
30+3.07 EUR
120+2.49 EUR
510+2.06 EUR
1020+1.9 EUR
Mindestbestellmenge: 4 Stücke
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IDP12E120XKSA1 IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b
IDP12E120XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 28A PGTO22022
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.61 EUR
50+2.51 EUR
Mindestbestellmenge: 5 Stücke
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IDP30E65D2XKSA1 Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2
IDP30E65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.74 EUR
50+2.31 EUR
100+2.07 EUR
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IRFBL3703 irfbl3703.pdf
IRFBL3703
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Produkt ist nicht verfügbar
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FF400R07KE4HOSA1 Infineon-FF400R07KE4-DS-v03_00-en_de.pdf?fileId=db3a30432d081e66012d097a5c6d001d
FF400R07KE4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+207.74 EUR
10+174.18 EUR
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FF200R17KE3HOSA1 Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c
FF200R17KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 310A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+263.12 EUR
10+233.31 EUR
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BFP420H6801XTSA1 BFP420_Rev2013.pdf
BFP420H6801XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
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BFP420H6801XTSA1 BFP420_Rev2013.pdf
BFP420H6801XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 8325 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
36+0.6 EUR
40+0.54 EUR
100+0.46 EUR
250+0.43 EUR
500+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 25 Stücke
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D711N65TXPSA1 Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f
D711N65TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 6500V 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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S29GL01GS11TFV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11TFV023
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TLE4997A8DE0300XUMA1 Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f
TLE4997A8DE0300XUMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TDSO-8-1
Current - Supply (Max): 10mA
Current - Output (Max): 1mA
Sensing Range: ±50mT ~ ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: 1.32kHz
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Axis: Single
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Programmable
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+5.21 EUR
Mindestbestellmenge: 2500 Stücke
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IKP39N65ES5XKSA1 Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c
IKP39N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/120ns
Switching Energy: 800µJ (on), 500µJ (off)
Test Condition: 400V, 39A, 12.8Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.58 EUR
50+3.32 EUR
100+3 EUR
Mindestbestellmenge: 4 Stücke
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IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.24 EUR
10+4.06 EUR
100+2.81 EUR
500+2.28 EUR
Mindestbestellmenge: 4 Stücke
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IPA60R060P7XKSA1 infineon-ipa60r060p7-datasheet-en.pdf
IPA60R060P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 48A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.27 EUR
50+6.5 EUR
100+5.95 EUR
500+4.97 EUR
Mindestbestellmenge: 2 Stücke
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