Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (121539) > Seite 556 nach 2026
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F4100R17N3P4B58BPSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 100A AG-ECONO3BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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CY95F636KPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT FLASH 32LQFPSupplier Device Package: 32-LQFP (7x7) Peripherals: LVD, LVR, POR, PWM, WDT Connectivity: I2C, LINbus, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1K x 8 Program Memory Size: 36KB (36K x 8) Speed: 16.25MHz Mounting Type: Surface Mount Package / Case: 32-LQFP Number of I/O: 28 Part Status: Active Packaging: Tray DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DF8MR12W1M1HFB67BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V 45A AG-EASY1BVgs(th) (Max) @ Id: 5.15V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V Technology: Silicon Carbide (SiC) Part Status: Active Supplier Device Package: AG-EASY1B Current - Continuous Drain (Id) @ 25°C: 45A Drain to Source Voltage (Vdss): 1200V (1.2kV) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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EVAL3K3WBIDIPSFBTOBO1 | Infineon Technologies |
Description: EVAL BRD FOR IPU80R4K5P7 XMC4200Packaging: Bulk Function: Battery Charger Type: Power Management Utilized IC / Part: IPU80R4K5P7, XMC4200 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Active Secondary Attributes: On-Board LEDs Contents: Board(s) |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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MB39C015WQN-G-JN-ERE1 | Infineon Technologies |
Description: IC REG BUCK ADJ 800MA DL 24QFN Voltage - Output (Max): 3.91V Synchronous Rectifier: Yes Supplier Device Package: 24-QFN (4x4) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 800mA Function: Step-Down Number of Outputs: 2 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 24-WFQFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Output (Min/Fixed): 0.45V Voltage - Input (Min): 2.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MB39C015WQN-G-JN-ERE1 | Infineon Technologies |
Description: IC REG BUCK ADJ 800MA DL 24QFN Part Status: Obsolete Voltage - Output (Min/Fixed): 0.45V Voltage - Input (Min): 2.5V Voltage - Output (Max): 3.91V Synchronous Rectifier: Yes Supplier Device Package: 24-QFN (4x4) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 800mA Function: Step-Down Number of Outputs: 2 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 24-WFQFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPF013N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40VTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7-U02 Vgs(th) (Max) @ Id: 3.4V @ 126µA Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc) FET Type: N-Channel |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPF013N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40VFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7-U02 Vgs(th) (Max) @ Id: 3.4V @ 126µA Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW55N80C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 54.9A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 7520 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Vgs(th) (Max) @ Id: 3.9V @ 3.3mA Power Dissipation (Max): 500W (Tc) |
auf Bestellung 658 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS621L1E3128AAUMA1 | Infineon Technologies |
Description: IC PWR SWITCHPackaging: Cut Tape (CT) Features: Auto Restart, Slew Rate Controlled Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-7-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit Part Status: Active |
auf Bestellung 10766 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS21844MTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16MLPQPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad, 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-MLPQ (4x4) Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3168 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF317TBGL-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 768KB FLASH 192FBGAVoltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 32x12b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 96K x 8 Program Memory Size: 768KB (768K x 8) Speed: 144MHz DigiKey Programmable: Not Verified Number of I/O: 154 Part Status: Active Supplier Device Package: 192-FBGA (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Mounting Type: Surface Mount Package / Case: 192-LFBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1520 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FZ400R65KE3NOSA1 | Infineon Technologies |
Description: IGBT MOD 6500V 800A 8350WInput Capacitance (Cies) @ Vce: 110 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 8350 W Voltage - Collector Emitter Breakdown (Max): 6500 V Current - Collector (Ic) (Max): 800 A Part Status: Active Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 400A Operating Temperature: -50°C ~ 125°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Supplier Device Package: Module NTC Thermistor: No |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IDWD30G120C5XKSA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 87A PGTO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1980pF @ 1V, 1MHz Current - Average Rectified (Io): 87A Supplier Device Package: PG-TO247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 248 µA @ 1200 V |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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2DIB0410FXUMA1 | Infineon Technologies |
Description: DGTL ISOLTR 3KV 2CH GP 8-SOICPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply: 2.7V ~ 6.5V Data Rate: 40Mbps Technology: Capacitive Coupling Voltage - Isolation: 3000Vrms Inputs - Side 1/Side 2: 2/0 Supplier Device Package: PG-DSO-8-82 Rise / Fall Time (Typ): 4ns, 4ns (Max) Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 33ns, 33ns Isolated Power: No Channel Type: Unidirectional Pulse Width Distortion (Max): 4ns Number of Channels: 2 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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KITXMC45RELAXV1TOBO1 | Infineon Technologies |
Description: RELAX KIT XMC4500 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: XMC4500 Platform: Relax Kit Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KITXMC47RELAXLITEV1TOBO1 | Infineon Technologies |
Description: RELAX LITE KIT XMC4700 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: XMC4700 Platform: Relax Lite Kit Part Status: Active |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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KITXMC45RELAXLITEV1TOBO1 | Infineon Technologies |
Description: RELAX LITE KIT XMC4500 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: XMC4500 Platform: Relax Lite Kit Part Status: Active |
auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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S29AS016J70BHI040 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48FBGAMemory Organization: 2M x 8, 1M x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Part Status: Active Supplier Device Package: 48-FBGA (8.15x6.15) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 48-VFBGA Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 1683 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB7530PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C65217-24LTXI | Infineon Technologies |
Description: IC USB TO SERIAL BRIDGE 24QFNPart Status: Active Supplier Device Package: 24-QFN (4x4) Standards: USB 2.0 Protocol: USB Current - Supply: 20mA Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C Interface: I2C, UART Function: Controller Package / Case: 24-UFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 4842 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C65211-24LTXIT | Infineon Technologies |
Description: IC USB TO SERIAL BRIDGE 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Function: Bridge, USB to I2C Interface: UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C65211-24LTXIT | Infineon Technologies |
Description: IC USB TO SERIAL BRIDGE 24QFNPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Bridge, USB to I2C Interface: UART Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 20mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3884 Stücke: Lieferzeit 10-14 Tag (e) |
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S80KS5122GABHV020 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 621 Stücke: Lieferzeit 10-14 Tag (e) |
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S80KS5122GABHI020 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 8 Access Time: 35 ns Memory Interface: HyperBus Write Cycle Time - Word, Page: 35ns Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tray |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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S80KS5122GABHB020 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGADigiKey Programmable: Not Verified Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tray Memory Organization: 64M x 8 Access Time: 35 ns Memory Interface: HyperBus Write Cycle Time - Word, Page: 35ns Part Status: Active Supplier Device Package: 24-FBGA (6x8) |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT2B63BADQ0AZSGS | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPPeripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 22x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F DigiKey Programmable: Not Verified Program Memory Size: 576KB (576K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 64K x 8 Number of I/O: 49 Part Status: Active Supplier Device Package: 64-LQFP (10x10) |
auf Bestellung 1548 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT2B63BADQ0AZEGS | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPNumber of I/O: 49 Part Status: Active Supplier Device Package: 64-LQFP (10x10) Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 22x12b SAR DigiKey Programmable: Not Verified Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 576KB (576K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
auf Bestellung 1526 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT2B63BADQ0AZEGST | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 22x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S80KS5122GABHV023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S80KS5122GABHM023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S80KS2563GABHV023 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAVoltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 32M x 8 Access Time: 35 ns Memory Interface: SPI - Octal I/O Write Cycle Time - Word, Page: 35ns Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S80KS5122GABHB023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 8 Access Time: 35 ns Memory Interface: HyperBus Write Cycle Time - Word, Page: 35ns Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S80KS5122GABHI023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 8 Access Time: 35 ns Memory Interface: HyperBus Write Cycle Time - Word, Page: 35ns Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S80KS5122GABHA023 | Infineon Technologies |
Description: IC PSRAM 512MBIT HYPERBUS 24FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 8 Access Time: 35 ns Memory Interface: HyperBus Write Cycle Time - Word, Page: 35ns Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDB30E60ATMA1 | Infineon Technologies |
Description: DIODE GP 600V 52.3A TO263-3-2Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO263-3-2 Current - Average Rectified (Io): 52.3A Technology: Standard Reverse Recovery Time (trr): 126 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDP30E60XKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 52.3A TO220Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-2 Current - Average Rectified (Io): 52.3A Technology: Standard Reverse Recovery Time (trr): 126 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDW30E60AFKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3Current - Reverse Leakage @ Vr: 40 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3 Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 143 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AIDW30E60 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A TO247-3 Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IKB20N65EH5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 38A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 560µJ (on), 130µJ (off) Test Condition: 400V, 20A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
auf Bestellung 673 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4147AZS-S465T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPQualification: AEC-Q100 Grade: Automotive Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Number of I/O: 54 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4147AZS-S465 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Part Status: Active Number of I/O: 54 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFR5410TRRPBF | Infineon Technologies |
Description: MOSFET P-CH 100V 13A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5045ICR100HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2Qualification: AEC-Q100 Grade: Automotive Part Status: Active Technology: Hall Effect Operating Temperature: -40°C ~ 125°C Axis: Single Output Type: PWM Features: Selectable Scale, Temperature Compensated Packaging: Cut Tape (CT) |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5045ICR100HALA1 | Infineon Technologies |
Description: SENSOR HALL EFFECT PWM SSO-2Qualification: AEC-Q100 Grade: Automotive Part Status: Active Technology: Hall Effect Operating Temperature: -40°C ~ 125°C Axis: Single Output Type: PWM Features: Selectable Scale, Temperature Compensated Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5012BE9000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5045ICIJGR050HALA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS PG-SSO-2Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: ±25mT Technology: Magnetoresistive Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Mounting Type: Through Hole Output Type: Analog Current Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5045ICIJGR050HALA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS PG-SSO-2Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: ±25mT Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Mounting Type: Through Hole Output Type: Analog Current Package / Case: 2-SIP, SSO-2-1 Packaging: Tape & Box (TB) Technology: Magnetoresistive |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R100HALA1 | Infineon Technologies |
Description: SPEED SENSORSPart Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1955 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R100HALA1 | Infineon Technologies |
Description: SPEED SENSORSPart Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Tape & Box (TB) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE50451ICR075XAMA1 | Infineon Technologies |
Description: SPEED SENSORSPart Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: ±25mT Technology: Magnetoresistive Voltage - Supply: 5.2V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: Single Mounting Type: Through Hole Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R050HALA1 | Infineon Technologies |
Description: SPEED SENSORSPart Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Sensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 4.25V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICPWM2R050HALA1 | Infineon Technologies |
Description: SPEED SENSORSSensing Range: 250mT (X,Y), 500mT (Z) Technology: Magnetoresistive Voltage - Supply: 4.25V ~ 20V Operating Temperature: -40°C ~ 190°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 2-SIP, SSO-2-1 Packaging: Tape & Box (TB) Part Status: Active Supplier Device Package: PG-SSO-2-1 Current - Supply (Max): 16.1mA Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE50461ICAKLRXAMA1 | Infineon Technologies |
Description: SEN MAGNETORESISTIVE PG-SSO-2-1Packaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE50461ICAKLRXAMA1 | Infineon Technologies |
Description: SEN MAGNETORESISTIVE PG-SSO-2-1Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: ±25mT Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5046ICAKERRHALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2Part Status: Active Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5046ICAKERRHALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2Part Status: Active Packaging: Tape & Box (TB) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5012BE1000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5012BE5000MS2GOTOBO1 | Infineon Technologies |
Description: EVAL TLE5012B ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5012B Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPC218N06N3X7SA1 | Infineon Technologies |
Description: MV POWER MOSPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6195 Stücke Im Einkaufswagen Stück im Wert von UAH |
| F4100R17N3P4B58BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A AG-ECONO3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MOD 1700V 100A AG-ECONO3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 162.5 EUR |
| CY95F636KPMC-G-UNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT FLASH 32LQFP
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, LVR, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Number of I/O: 28
Part Status: Active
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT FLASH 32LQFP
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, LVR, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Number of I/O: 28
Part Status: Active
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DF8MR12W1M1HFB67BPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Technology: Silicon Carbide (SiC)
Part Status: Active
Supplier Device Package: AG-EASY1B
Current - Continuous Drain (Id) @ 25°C: 45A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Technology: Silicon Carbide (SiC)
Part Status: Active
Supplier Device Package: AG-EASY1B
Current - Continuous Drain (Id) @ 25°C: 45A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 160.37 EUR |
| EVAL3K3WBIDIPSFBTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BRD FOR IPU80R4K5P7 XMC4200
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: IPU80R4K5P7, XMC4200
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Description: EVAL BRD FOR IPU80R4K5P7 XMC4200
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: IPU80R4K5P7, XMC4200
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Secondary Attributes: On-Board LEDs
Contents: Board(s)
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1239.9 EUR |
| MB39C015WQN-G-JN-ERE1 |
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 800MA DL 24QFN
Voltage - Output (Max): 3.91V
Synchronous Rectifier: Yes
Supplier Device Package: 24-QFN (4x4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 800mA
Function: Step-Down
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.45V
Voltage - Input (Min): 2.5V
Description: IC REG BUCK ADJ 800MA DL 24QFN
Voltage - Output (Max): 3.91V
Synchronous Rectifier: Yes
Supplier Device Package: 24-QFN (4x4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 800mA
Function: Step-Down
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.45V
Voltage - Input (Min): 2.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MB39C015WQN-G-JN-ERE1 |
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 800MA DL 24QFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.45V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 3.91V
Synchronous Rectifier: Yes
Supplier Device Package: 24-QFN (4x4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 800mA
Function: Step-Down
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG BUCK ADJ 800MA DL 24QFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.45V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 3.91V
Synchronous Rectifier: Yes
Supplier Device Package: 24-QFN (4x4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 800mA
Function: Step-Down
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPF013N04NF2SATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc)
FET Type: N-Channel
Description: TRENCH <= 40V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc)
FET Type: N-Channel
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.81 EUR |
| IPF013N04NF2SATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc)
Description: TRENCH <= 40V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.35 EUR |
| SPW55N80C3FKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 54.9A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7520 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs(th) (Max) @ Id: 3.9V @ 3.3mA
Power Dissipation (Max): 500W (Tc)
Description: MOSFET N-CH 800V 54.9A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7520 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs(th) (Max) @ Id: 3.9V @ 3.3mA
Power Dissipation (Max): 500W (Tc)
auf Bestellung 658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.89 EUR |
| 30+ | 13.4 EUR |
| 120+ | 11.71 EUR |
| BTS621L1E3128AAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Cut Tape (CT)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
Description: IC PWR SWITCH
Packaging: Cut Tape (CT)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
auf Bestellung 10766 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.33 EUR |
| 10+ | 7.11 EUR |
| 25+ | 6.56 EUR |
| 100+ | 5.95 EUR |
| 250+ | 5.66 EUR |
| 500+ | 5.49 EUR |
| IRS21844MTRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.61 EUR |
| 10+ | 2.68 EUR |
| 25+ | 2.44 EUR |
| 100+ | 2.19 EUR |
| 250+ | 2.06 EUR |
| 500+ | 2.01 EUR |
| CY9BF317TBGL-GK7E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 96K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 144MHz
DigiKey Programmable: Not Verified
Number of I/O: 154
Part Status: Active
Supplier Device Package: 192-FBGA (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Mounting Type: Surface Mount
Package / Case: 192-LFBGA
Packaging: Tray
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 96K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 144MHz
DigiKey Programmable: Not Verified
Number of I/O: 154
Part Status: Active
Supplier Device Package: 192-FBGA (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Mounting Type: Surface Mount
Package / Case: 192-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 1520 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FZ400R65KE3NOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 800A 8350W
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 8350 W
Voltage - Collector Emitter Breakdown (Max): 6500 V
Current - Collector (Ic) (Max): 800 A
Part Status: Active
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 400A
Operating Temperature: -50°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: Module
NTC Thermistor: No
Description: IGBT MOD 6500V 800A 8350W
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 8350 W
Voltage - Collector Emitter Breakdown (Max): 6500 V
Current - Collector (Ic) (Max): 800 A
Part Status: Active
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 400A
Operating Temperature: -50°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: Module
NTC Thermistor: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2456.17 EUR |
| IDWD30G120C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 87A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Current - Average Rectified (Io): 87A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 248 µA @ 1200 V
Description: DIODE SIC 1.2KV 87A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Current - Average Rectified (Io): 87A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 248 µA @ 1200 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.8 EUR |
| 30+ | 12.58 EUR |
| 120+ | 10.78 EUR |
| 2DIB0410FXUMA1 |
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Hersteller: Infineon Technologies
Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Number of Channels: 2
Description: DGTL ISOLTR 3KV 2CH GP 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 3000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: PG-DSO-8-82
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 4ns
Number of Channels: 2
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.8 EUR |
| 5000+ | 0.76 EUR |
| 7500+ | 0.74 EUR |
| KITXMC45RELAXV1TOBO1 |
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Hersteller: Infineon Technologies
Description: RELAX KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Kit
Part Status: Active
Description: RELAX KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Kit
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KITXMC47RELAXLITEV1TOBO1 |
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Hersteller: Infineon Technologies
Description: RELAX LITE KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4700
Platform: Relax Lite Kit
Part Status: Active
Description: RELAX LITE KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4700
Platform: Relax Lite Kit
Part Status: Active
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.75 EUR |
| KITXMC45RELAXLITEV1TOBO1 |
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Hersteller: Infineon Technologies
Description: RELAX LITE KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Lite Kit
Part Status: Active
Description: RELAX LITE KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Lite Kit
Part Status: Active
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 44.55 EUR |
| S29AS016J70BHI040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Memory Organization: 2M x 8, 1M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Memory Organization: 2M x 8, 1M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
Supplier Device Package: 48-FBGA (8.15x6.15)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.22 EUR |
| 10+ | 3.01 EUR |
| 25+ | 2.92 EUR |
| 50+ | 2.85 EUR |
| 100+ | 2.79 EUR |
| 338+ | 2.67 EUR |
| 676+ | 2.61 EUR |
| 1014+ | 2.6 EUR |
| IRFB7530PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.49 EUR |
| 50+ | 3.33 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.31 EUR |
| CY7C65217-24LTXI |
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Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Standards: USB 2.0
Protocol: USB
Current - Supply: 20mA
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Interface: I2C, UART
Function: Controller
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC USB TO SERIAL BRIDGE 24QFN
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Standards: USB 2.0
Protocol: USB
Current - Supply: 20mA
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Interface: I2C, UART
Function: Controller
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 4842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 10+ | 3.83 EUR |
| 25+ | 3.62 EUR |
| 80+ | 3.14 EUR |
| 230+ | 2.98 EUR |
| 490+ | 2.83 EUR |
| CY7C65211-24LTXIT |
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Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CY7C65211-24LTXIT |
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Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3884 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.95 EUR |
| 10+ | 3.71 EUR |
| 25+ | 3.4 EUR |
| 100+ | 3.06 EUR |
| 250+ | 2.9 EUR |
| 500+ | 2.86 EUR |
| S80KS5122GABHV020 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.55 EUR |
| 10+ | 16.3 EUR |
| 25+ | 15.8 EUR |
| 50+ | 15.42 EUR |
| 100+ | 15.05 EUR |
| 338+ | 14.4 EUR |
| S80KS5122GABHI020 |
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Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.71 EUR |
| 10+ | 12.75 EUR |
| S80KS5122GABHB020 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.91 EUR |
| 10+ | 15.72 EUR |
| 25+ | 15.23 EUR |
| 50+ | 14.87 EUR |
| 100+ | 14.5 EUR |
| 338+ | 13.87 EUR |
| CYT2B63BADQ0AZSGS |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
DigiKey Programmable: Not Verified
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
DigiKey Programmable: Not Verified
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
auf Bestellung 1548 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.06 EUR |
| 10+ | 14.13 EUR |
| 25+ | 13.14 EUR |
| 80+ | 12.21 EUR |
| 230+ | 11.59 EUR |
| 440+ | 11.29 EUR |
| CYT2B63BADQ0AZEGS |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
DigiKey Programmable: Not Verified
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Number of I/O: 49
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 22x12b SAR
DigiKey Programmable: Not Verified
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 1526 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.48 EUR |
| 10+ | 14.46 EUR |
| 25+ | 13.45 EUR |
| 80+ | 12.5 EUR |
| 230+ | 11.87 EUR |
| 440+ | 11.56 EUR |
| CYT2B63BADQ0AZEGST |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| S80KS5122GABHV023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| S80KS5122GABHM023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| S80KS2563GABHV023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 35 ns
Memory Interface: SPI - Octal I/O
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 35 ns
Memory Interface: SPI - Octal I/O
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| S80KS5122GABHB023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| S80KS5122GABHI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S80KS5122GABHA023 |
![]() |
Hersteller: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 35 ns
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IDB30E60ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IDP30E60XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 52.3A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 600V 52.3A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| IDW30E60AFKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIDW30E60 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A TO247-3
Part Status: Active
Packaging: Tube
Description: DIODE GEN PURP 600V 30A TO247-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKB20N65EH5ATMA1 |
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.78 EUR |
| 10+ | 4.42 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.52 EUR |
| CY8C4147AZS-S465T |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Grade: Automotive
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Number of I/O: 54
Part Status: Active
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Grade: Automotive
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Number of I/O: 54
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| CY8C4147AZS-S465 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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| IRFR5410TRRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| TLE5045ICR100HALA1 |
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Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 9+ | 2.08 EUR |
| 10+ | 1.98 EUR |
| 25+ | 1.86 EUR |
| 50+ | 1.78 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.5 EUR |
| TLE5045ICR100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Description: SENSOR HALL EFFECT PWM SSO-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Technology: Hall Effect
Operating Temperature: -40°C ~ 125°C
Axis: Single
Output Type: PWM
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| TLE5012BE9000MS2GOTOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.66 EUR |
| TLE5045ICIJGR050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Description: SPEED & CURRENT SENSORS PG-SSO-2
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5045ICIJGR050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Technology: Magnetoresistive
Description: SPEED & CURRENT SENSORS PG-SSO-2
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Mounting Type: Through Hole
Output Type: Analog Current
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Technology: Magnetoresistive
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.76 EUR |
| TLE5046ICPWM2R100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.58 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.87 EUR |
| TLE5046ICPWM2R100HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| TLE50451ICR075XAMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: Single
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: ±25mT
Technology: Magnetoresistive
Voltage - Supply: 5.2V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: Single
Mounting Type: Through Hole
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.28 EUR |
| 10+ | 4.13 EUR |
| 100+ | 2.91 EUR |
| 500+ | 2.64 EUR |
| TLE5046ICPWM2R050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: SPEED SENSORS
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.58 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.87 EUR |
| TLE5046ICPWM2R050HALA1 |
![]() |
Hersteller: Infineon Technologies
Description: SPEED SENSORS
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Qualification: AEC-Q100
Grade: Automotive
Description: SPEED SENSORS
Sensing Range: 250mT (X,Y), 500mT (Z)
Technology: Magnetoresistive
Voltage - Supply: 4.25V ~ 20V
Operating Temperature: -40°C ~ 190°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 2-SIP, SSO-2-1
Packaging: Tape & Box (TB)
Part Status: Active
Supplier Device Package: PG-SSO-2-1
Current - Supply (Max): 16.1mA
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE50461ICAKLRXAMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.65 EUR |
| 10+ | 3.02 EUR |
| 100+ | 2.09 EUR |
| 500+ | 1.77 EUR |
| TLE50461ICAKLRXAMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SEN MAGNETORESISTIVE PG-SSO-2-1
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5046ICAKERRHALA1 |
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Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.58 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.31 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.87 EUR |
| TLE5046ICAKERRHALA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Description: IC HALL SENSOR LINEAR SSO-2
Part Status: Active
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE5012BE1000MS2GOTOBO1 |
![]() |
Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 46.66 EUR |
| TLE5012BE5000MS2GOTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC218N06N3X7SA1 |
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Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6195 Stücke
Im Einkaufswagen
Stück im Wert von UAH

































