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STK14C88-NF25 STK14C88-NF25 Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK14C88-NF35TR STK14C88-NF35TR Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 Infineon Technologies IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
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30+4.39 EUR
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IRF9540NLPBF IRF9540NLPBF Infineon Technologies irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca Description: MOSFET P-CH 100V 23A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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CY2544QC011 CY2544QC011 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L25R12W1T4B27BOMA1 F3L25R12W1T4B27BOMA1 Infineon Technologies Infineon-F3L25R12W1T4_B27-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499b0c934063 Description: MODULE IGBT 1200V EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
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SPU02N60C3BKMA1 SPU02N60C3BKMA1 Infineon Technologies SPD_U02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d79214883 Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65640A-LFXC CY7C65640A-LFXC Infineon Technologies CY7C65640A.pdf Description: IC USB HUB CONTROLLER HS 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLB3036PBF IRLB3036PBF Infineon Technologies irlb3036pbf.pdf?fileId=5546d462533600a40153566033ea2589 Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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100+3.11 EUR
500+2.56 EUR
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IRFB4110PBF IRFB4110PBF Infineon Technologies irfb4110pbf.pdf?fileId=5546d462533600a401535615a9571e0b Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
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IGCM15F60GAXKMA1 IGCM15F60GAXKMA1 Infineon Technologies Infineon-IGCM15F60GA-DS-v01_07-EN.pdf?fileId=5546d4624fb7fef2014fcb15c0597867 Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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IKCM15F60GAXKMA1 IKCM15F60GAXKMA1 Infineon Technologies Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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IKP10N60TXKSA1 IKP10N60TXKSA1 Infineon Technologies IKP10N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bceea1b13587 Description: IGBT NPT FS 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
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S29PL127J60BAW000 S29PL127J60BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
Packaging: Tray
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 80-FBGA (8x11)
Part Status: Obsolete
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29PL127J65BAW000 S29PL127J65BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
Packaging: Tray
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 80-FBGA (8x11)
Part Status: Obsolete
Write Cycle Time - Word, Page: 65ns
Memory Interface: Parallel
Access Time: 65 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29PL127J70BAW000 S29PL127J70BAW000 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 128MBIT PARALLEL 80FBGA
Packaging: Tray
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 80-FBGA (8x11)
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF Infineon Technologies irfb4115pbf.pdf?fileId=5546d462533600a401535615ba6a1e0f Description: MOSFET N-CH 150V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 3908 Stücke:
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10+2.94 EUR
100+2.27 EUR
500+1.73 EUR
1000+1.60 EUR
2000+1.52 EUR
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IRFB4127PBF IRFB4127PBF Infineon Technologies irfb4127pbf.pdf?fileId=5546d462533600a401535615c2ef1e11 Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Produkt ist nicht verfügbar
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TC1797512F180EFACKXUMA1 Infineon Technologies TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 4x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Obsolete
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB4227PBF IRFB4227PBF Infineon Technologies irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Description: MOSFET N-CH 200V 65A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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50+2.00 EUR
100+1.77 EUR
500+1.44 EUR
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CY9AF142MBPMC-G-JNE2 CY9AF142MBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRIDIUMSLM9670TPM20TOBO1 IRIDIUMSLM9670TPM20TOBO1 Infineon Technologies IRIDIUMSLM9670TPM20TOBO1_Web.pdf Description: EVAL IRIDIUM SLM 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLM9670
Platform: Raspberry Pi
Part Status: Active
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1+104.49 EUR
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IRIDIUMSLI9670TPM20TOBO1 IRIDIUMSLI9670TPM20TOBO1 Infineon Technologies IRIDIUMSLI9670TPM20TOBO1_Web.pdf Description: EVAL IRIDIUM SLI 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLI9670
Platform: Raspberry Pi
Part Status: Active
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ICE3A0565ZXKLA1 ICE3A0565ZXKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 25 W
Produkt ist nicht verfügbar
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EVAL3KW2LLCP747TOBO1 EVAL3KW2LLCP747TOBO1 Infineon Technologies Infineon-GeneralDescription_EVAL_3KW_2LLC_P7_47-ATI-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5833f488044e Description: EVAL BOARD ICE2QR2280Z XMC4400
Packaging: Bulk
Voltage - Output: 44V ~ 58V
Voltage - Input: 350V ~ 400V
Current - Output: 55A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 3kW
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EVAL600W12VLLCP7TOBO1 EVAL600W12VLLCP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_600W_12V_LLC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b1e4f218b0035 Description: EVAL BOARD ICE2HS01G ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2HS01G, ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 600W
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EVAL800WPFCP7TOBO1 EVAL800WPFCP7TOBO1 Infineon Technologies Infineon-ApplicationNote_EvaluationBoard_EVAL_800W_PFC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b141c54790da7 Description: EVAL BRD ICE2QR2280Z ICE3PCS01G
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ICE2QR2280Z, ICE3PCS01G
Supplied Contents: Board(s)
Part Status: Active
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IRF250P225 IRF250P225 Infineon Technologies Infineon-IRF250P225-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb65c8c7c71 Description: MOSFET N-CH 250V 69A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4897 pF @ 50 V
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IRF250P224 IRF250P224 Infineon Technologies Infineon-IRF250P224-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb640137c6e Description: MOSFET N-CH 250V 96A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9915 pF @ 50 V
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DZ435N40KHPSA1 DZ435N40KHPSA1 Infineon Technologies Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304 Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
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IKW15T120FKSA1 IKW15T120FKSA1 Infineon Technologies IKW15T120_Rev2G_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42896343e2d Description: IGBT NPT FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 2.7mJ
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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CY9BF122LQN-G-AVE2 CY9BF122LQN-G-AVE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
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CY9BF124KQN-G-AVE2 CY9BF124KQN-G-AVE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
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CY9BF122MPMC1-G-JNE2 CY9BF122MPMC1-G-JNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
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FZ750R65KE3NOSA1 FZ750R65KE3NOSA1 Infineon Technologies Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974 Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
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BSC019N02KSGAUMA1 BSC019N02KSGAUMA1 Infineon Technologies BSC019N02KS+G+Rev1.2.pdf?folderId=db3a3043163797a6011637c0dc9c0001&fileId=db3a3043163797a6011637c16cdf0002 Description: MOSFET N-CH 20V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 350µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 Infineon Technologies Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40 Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
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S6BP203A8FST2B20A Infineon Technologies Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRLB4030PBF IRLB4030PBF Infineon Technologies irlb4030pbf.pdf?fileId=5546d462533600a4015356604640258d Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
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IRLB8748PBF IRLB8748PBF Infineon Technologies irlb8748pbf.pdf?fileId=5546d462533600a401535660665b2595 Description: MOSFET N-CH 30V 92A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2139 pF @ 15 V
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IDWD40G120C5XKSA1 IDWD40G120C5XKSA1 Infineon Technologies Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Description: DIODE SIC 1.2KV 110A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2592pF @ 1V, 1MHz
Current - Average Rectified (Io): 110A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 40 A
Current - Reverse Leakage @ Vr: 332 µA @ 1200 V
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IRFZ44ESTRRPBF IRFZ44ESTRRPBF Infineon Technologies irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208 Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
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CY7C64316-16LKXCT CY7C64316-16LKXCT Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (32kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Last Time Buy
Number of I/O: 11
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 ETD540N22P60HPSA1 Infineon Technologies Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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SPP20N60CFDXKSA1 SPP20N60CFDXKSA1 Infineon Technologies SPP20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bffe24649 Description: MOSFET N-CH 650V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 Infineon Technologies Infineon-AIKP20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b0927c97 Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Produkt ist nicht verfügbar
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IKP20N60TXKSA1 IKP20N60TXKSA1 Infineon Technologies IKP_W20N60T+Rev2_5G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bd1fce7135bd Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
auf Bestellung 1791 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.00 EUR
50+2.50 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.69 EUR
Mindestbestellmenge: 4
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S25FL129P0XNFV001 S25FL129P0XNFV001 Infineon Technologies Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
auf Bestellung 1004 Stücke:
Lieferzeit 10-14 Tag (e)
50+16.46 EUR
Mindestbestellmenge: 50
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BCP5316H6327XTSA1 BCP5316H6327XTSA1 Infineon Technologies bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 80V 1A PG-SOT223-4-24
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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IRS2127SPBF IRS2127SPBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 Infineon Technologies DS_IG15N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591b22bb86ffb Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.34 EUR
30+4.08 EUR
120+3.37 EUR
Mindestbestellmenge: 3
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 Infineon Technologies Infineon-IHW15N120E1-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156a2b608492129 Description: IGBT NPT/TRENCH 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 300µJ (off)
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 156 W
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.70 EUR
Mindestbestellmenge: 4
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 Infineon Technologies Infineon-IKW15N120BH6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801d11316bd Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/240ns
Switching Energy: 700µJ (on), 550µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 Infineon Technologies IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 32ns/362ns
Switching Energy: 2.05mJ
Test Condition: 600V, 15A, 41.8Ohm, 15V
Gate Charge: 93 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 235 W
Produkt ist nicht verfügbar
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 Infineon Technologies IHW15N120R3_Rev2_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304320d39d590121814cb068197b Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/300ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 15A, 14.6Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 254 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.42 EUR
30+3.54 EUR
120+2.90 EUR
Mindestbestellmenge: 3
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SGP15N120XKSA1 SGP15N120XKSA1 Infineon Technologies SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b Description: IGBT NPT 1200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/580ns
Switching Energy: 1.9mJ
Test Condition: 800V, 15A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 198 W
Produkt ist nicht verfügbar
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BCX5416H6327XTSA1 BCX5416H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XMC1202T016X0016ABXUMA1 XMC1202T016X0016ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2288H200F100LABKXUMA1 XC2288H200F100LABKXUMA1 Infineon Technologies XC228xH.pdf Description: IC MCU 16/32B 1.6MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK14C88-NF25 DS_428_STK14C88.pdf
STK14C88-NF25
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK14C88-NF35TR DS_428_STK14C88.pdf
STK14C88-NF35TR
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008
IGW40N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
30+4.39 EUR
120+3.63 EUR
Mindestbestellmenge: 3
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IRF9540NLPBF irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca
IRF9540NLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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CY2544QC011 download
CY2544QC011
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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F3L25R12W1T4B27BOMA1 Infineon-F3L25R12W1T4_B27-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499b0c934063
F3L25R12W1T4B27BOMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 1200V EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+70.73 EUR
24+48.45 EUR
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SPU02N60C3BKMA1 SPD_U02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d79214883
SPU02N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C65640A-LFXC CY7C65640A.pdf
CY7C65640A-LFXC
Hersteller: Infineon Technologies
Description: IC USB HUB CONTROLLER HS 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLB3036PBF irlb3036pbf.pdf?fileId=5546d462533600a40153566033ea2589
IRLB3036PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
auf Bestellung 1788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.90 EUR
10+4.39 EUR
100+3.11 EUR
500+2.56 EUR
1000+2.43 EUR
Mindestbestellmenge: 3
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IRFB4110PBF irfb4110pbf.pdf?fileId=5546d462533600a401535615a9571e0b
IRFB4110PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
auf Bestellung 493 Stücke:
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Anzahl Preis
5+3.73 EUR
50+1.97 EUR
100+1.82 EUR
Mindestbestellmenge: 5
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IGCM15F60GAXKMA1 Infineon-IGCM15F60GA-DS-v01_07-EN.pdf?fileId=5546d4624fb7fef2014fcb15c0597867
IGCM15F60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 256 Stücke:
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Anzahl Preis
1+17.92 EUR
14+11.86 EUR
112+9.22 EUR
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
IKCM15F60GAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 235 Stücke:
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Anzahl Preis
1+18.15 EUR
14+13.85 EUR
28+13.15 EUR
112+12.11 EUR
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IKP10N60TXKSA1 IKP10N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bceea1b13587
IKP10N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 2214 Stücke:
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Anzahl Preis
5+3.56 EUR
50+1.73 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.14 EUR
2000+1.06 EUR
Mindestbestellmenge: 5
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S29PL127J60BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J60BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
Packaging: Tray
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 80-FBGA (8x11)
Part Status: Obsolete
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29PL127J65BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J65BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
Packaging: Tray
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 80-FBGA (8x11)
Part Status: Obsolete
Write Cycle Time - Word, Page: 65ns
Memory Interface: Parallel
Access Time: 65 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29PL127J70BAW000 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL127J70BAW000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 80FBGA
Packaging: Tray
Package / Case: 80-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 80-FBGA (8x11)
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB4115PBF irfb4115pbf.pdf?fileId=5546d462533600a401535615ba6a1e0f
IRFB4115PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 3908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+2.94 EUR
100+2.27 EUR
500+1.73 EUR
1000+1.60 EUR
2000+1.52 EUR
Mindestbestellmenge: 5
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IRFB4127PBF irfb4127pbf.pdf?fileId=5546d462533600a401535615c2ef1e11
IRFB4127PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Produkt ist nicht verfügbar
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TC1797512F180EFACKXUMA1 TC1797_DS_V1+3.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 4x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Obsolete
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB4227PBF irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 65A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 3021 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
50+2.00 EUR
100+1.77 EUR
500+1.44 EUR
1000+1.27 EUR
2000+1.19 EUR
Mindestbestellmenge: 6
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CY9AF142MBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142MBPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRIDIUMSLM9670TPM20TOBO1 IRIDIUMSLM9670TPM20TOBO1_Web.pdf
IRIDIUMSLM9670TPM20TOBO1
Hersteller: Infineon Technologies
Description: EVAL IRIDIUM SLM 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLM9670
Platform: Raspberry Pi
Part Status: Active
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+104.49 EUR
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IRIDIUMSLI9670TPM20TOBO1 IRIDIUMSLI9670TPM20TOBO1_Web.pdf
IRIDIUMSLI9670TPM20TOBO1
Hersteller: Infineon Technologies
Description: EVAL IRIDIUM SLI 9670 RASPBERRY
Packaging: Bulk
Function: Transceiver
Type: RF
Contents: Board(s)
Utilized IC / Part: SLI9670
Platform: Raspberry Pi
Part Status: Active
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+106.53 EUR
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ICE3A0565ZXKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A0565ZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 25 W
Produkt ist nicht verfügbar
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EVAL3KW2LLCP747TOBO1 Infineon-GeneralDescription_EVAL_3KW_2LLC_P7_47-ATI-v01_00-EN.pdf?fileId=5546d4625b3ca4ec015b5833f488044e
EVAL3KW2LLCP747TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE2QR2280Z XMC4400
Packaging: Bulk
Voltage - Output: 44V ~ 58V
Voltage - Input: 350V ~ 400V
Current - Output: 55A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 3kW
Produkt ist nicht verfügbar
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EVAL600W12VLLCP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_600W_12V_LLC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b1e4f218b0035
EVAL600W12VLLCP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD ICE2HS01G ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2HS01G, ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 600W
Produkt ist nicht verfügbar
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EVAL800WPFCP7TOBO1 Infineon-ApplicationNote_EvaluationBoard_EVAL_800W_PFC_P7-AN-v01_00-EN.pdf?fileId=5546d4625b10283a015b141c54790da7
EVAL800WPFCP7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD ICE2QR2280Z ICE3PCS01G
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ICE2QR2280Z, ICE3PCS01G
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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IRF250P225 Infineon-IRF250P225-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb65c8c7c71
IRF250P225
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 69A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 41A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4897 pF @ 50 V
Produkt ist nicht verfügbar
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IRF250P224 Infineon-IRF250P224-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8bb640137c6e
IRF250P224
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 96A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 58A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9915 pF @ 50 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.73 EUR
25+8.94 EUR
100+7.54 EUR
Mindestbestellmenge: 2
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DZ435N40KHPSA1 Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304
DZ435N40KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+435.60 EUR
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IKW15T120FKSA1 IKW15T120_Rev2G_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42896343e2d
IKW15T120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 2.7mJ
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
Produkt ist nicht verfügbar
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CY9BF122LQN-G-AVE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF122LQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.47 EUR
10+13.97 EUR
25+13.32 EUR
80+11.57 EUR
260+11.05 EUR
520+10.07 EUR
1040+8.77 EUR
Mindestbestellmenge: 2
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CY9BF124KQN-G-AVE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF124KQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF122MPMC1-G-JNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF122MPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FZ750R65KE3NOSA1 Infineon-FZ750R65KE3-DS-v03_01-EN.pdf?fileId=db3a304325afd6e00126461fd3936974
FZ750R65KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 6500V 750A A-IHV190-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 14500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4391.66 EUR
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IPW60R099C6FKSA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPW60R099C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.08 EUR
10+8.92 EUR
100+6.57 EUR
500+5.85 EUR
Mindestbestellmenge: 2
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BSC019N02KSGAUMA1 BSC019N02KS+G+Rev1.2.pdf?folderId=db3a3043163797a6011637c0dc9c0001&fileId=db3a3043163797a6011637c16cdf0002
BSC019N02KSGAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 350µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Produkt ist nicht verfügbar
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IPP034N08N5AKSA1 Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40
IPP034N08N5AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
50+2.78 EUR
100+2.65 EUR
500+2.16 EUR
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S6BP203A8FST2B20A
Hersteller: Infineon Technologies
Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRLB4030PBF irlb4030pbf.pdf?fileId=5546d462533600a4015356604640258d
IRLB4030PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
auf Bestellung 7406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+3.76 EUR
100+2.65 EUR
500+2.36 EUR
1000+2.09 EUR
2000+1.99 EUR
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IRLB8748PBF irlb8748pbf.pdf?fileId=5546d462533600a401535660665b2595
IRLB8748PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 92A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2139 pF @ 15 V
auf Bestellung 1202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
50+0.96 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 9
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IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
IDWD40G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 110A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2592pF @ 1V, 1MHz
Current - Average Rectified (Io): 110A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 40 A
Current - Reverse Leakage @ Vr: 332 µA @ 1200 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.46 EUR
30+14.39 EUR
120+12.78 EUR
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IRFZ44ESTRRPBF irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208
IRFZ44ESTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C64316-16LKXCT download
CY7C64316-16LKXCT
Hersteller: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (32kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Last Time Buy
Number of I/O: 11
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a
ETD540N22P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+344.01 EUR
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SPP20N60CFDXKSA1 SPP20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bffe24649
SPP20N60CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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AIKP20N60CTAKSA1 Infineon-AIKP20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b0927c97
AIKP20N60CTAKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Produkt ist nicht verfügbar
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IKP20N60TXKSA1 IKP_W20N60T+Rev2_5G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bd1fce7135bd
IKP20N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
auf Bestellung 1791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.00 EUR
50+2.50 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.69 EUR
Mindestbestellmenge: 4
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S25FL129P0XNFV001 Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL129P0XNFV001
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
auf Bestellung 1004 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+16.46 EUR
Mindestbestellmenge: 50
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BCP5316H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
BCP5316H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT223-4-24
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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IRS2127SPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 DS_IG15N120H3_1_1_final.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304325305e6d012591b22bb86ffb
IGW15N120H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
30+4.08 EUR
120+3.37 EUR
Mindestbestellmenge: 3
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IHW15N120E1XKSA1 Infineon-IHW15N120E1-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156a2b608492129
IHW15N120E1XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT/TRENCH 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 300µJ (off)
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 156 W
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.70 EUR
Mindestbestellmenge: 4
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IKW15N120BH6XKSA1 Infineon-IKW15N120BH6-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01638801d11316bd
IKW15N120BH6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/240ns
Switching Energy: 700µJ (on), 550µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
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IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 32ns/362ns
Switching Energy: 2.05mJ
Test Condition: 600V, 15A, 41.8Ohm, 15V
Gate Charge: 93 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 235 W
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IHW15N120R3FKSA1 IHW15N120R3_Rev2_2G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a304320d39d590121814cb068197b
IHW15N120R3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/300ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 15A, 14.6Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 254 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.42 EUR
30+3.54 EUR
120+2.90 EUR
Mindestbestellmenge: 3
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SGP15N120XKSA1 SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b
SGP15N120XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/580ns
Switching Energy: 1.9mJ
Test Condition: 800V, 15A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 198 W
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BCX5416H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5416H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XMC1202T016X0016ABXUMA1 Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t
XMC1202T016X0016ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Active
Number of I/O: 11
DigiKey Programmable: Not Verified
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XC2288H200F100LABKXUMA1 XC228xH.pdf
XC2288H200F100LABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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