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TLF50201ELXUMA2 TLF50201ELXUMA2 Infineon Technologies Infineon-TLF50201EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2a3b741e5 Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLF50201ELXUMA2 TLF50201ELXUMA2 Infineon Technologies Infineon-TLF50201EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2a3b741e5 Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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5+4.24 EUR
10+3.16 EUR
25+2.89 EUR
100+2.59 EUR
250+2.45 EUR
500+2.36 EUR
1000+2.29 EUR
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IDV08E65D2XKSA1 IDV08E65D2XKSA1 Infineon Technologies DS_IDV08E65D2_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6956ef27064a Description: DIODE STANDARD 650V 8A PGTO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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ICE3AR10080CJZXKLA1 ICE3AR10080CJZXKLA1 Infineon Technologies Infineon-ICE3AR10080CJZ-DS-v02_00-en.pdf?fileId=db3a3043345a30bc0134891d7624344f Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Power (Watts): 22 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
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ICE3AR1580VJZXKLA1 ICE3AR1580VJZXKLA1 Infineon Technologies Infineon-ICE3AR1580VJZ-DS-v02_00-en.pdf?fileId=5546d4614546039901456f0d6d8d4165 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 57 W
Part Status: Active
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10+2.5 EUR
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100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
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ICE3AR4780VJZXKLA1 ICE3AR4780VJZXKLA1 Infineon Technologies Infineon-ICE3AR4780VJZ-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141ffe81b683068 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 31 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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10+2.13 EUR
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100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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ICE3AR1080VJZXKLA1 ICE3AR1080VJZXKLA1 Infineon Technologies Infineon-ICE3AR1080VJZ-DS-v02_00-en.pdf?fileId=5546d4614546039901456f0482844148 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 71 W
Produkt ist nicht verfügbar
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CY7C1345S-100AXCT CY7C1345S-100AXCT Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Memory Organization: 128K x 36
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY7C1325S-100AXCT CY7C1325S-100AXCT Infineon Technologies Description: IC SRAM 4.5MBIT PAR 100TQFP
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
DigiKey Programmable: Not Verified
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IM111X3Q1BAUMA1 IM111X3Q1BAUMA1 Infineon Technologies Infineon-IM111-X3Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56dfc220201 Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Tape & Reel (TR)
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IM111X3Q1BAUMA1 IM111X3Q1BAUMA1 Infineon Technologies Infineon-IM111-X3Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56dfc220201 Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Cut Tape (CT)
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IM111X3Q1BAUMA1 IM111X3Q1BAUMA1 Infineon Technologies Infineon-IM111-X3Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56dfc220201 Description: CIPOS NANO PG-IQFN-37
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Bulk
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
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PEF 20256 E V3.2-G Infineon Technologies PEF20256.pdf Description: IC TELECOM INTERFACE 323FCLBGA
Power (Watts): 3 W
Part Status: Obsolete
Supplier Device Package: 323-FCLBGA
Current - Supply: 200mA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Interface: HDLC, PPP, SS7, TMA
Function: Multichannel Network Interface Controller (MUNICH)
Mounting Type: Surface Mount
Package / Case: 323-BBGA, FCBGA
Packaging: Tray
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BSM75GD120DLCBOSA1 Infineon Technologies Description: IGBT MOD 1200V 125A 500W
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 92 µA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Not For New Designs
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
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XMC4200F64F256BAXQMA1 XMC4200F64F256BAXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
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2+12.13 EUR
10+9.39 EUR
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160+7.75 EUR
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XMC1401F064F0128AAXUMA1 XMC1401F064F0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1401F064F0128AAXUMA1 XMC1401F064F0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
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SIGC100T60R3EX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
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BSZ0994NSATMA1 BSZ0994NSATMA1 Infineon Technologies Infineon-BSZ0994NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d0251aa5fa9 Description: MOSFET N-CH 30V 13A 8TSDSON-25
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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BSZ0994NSATMA1 BSZ0994NSATMA1 Infineon Technologies Infineon-BSZ0994NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d0251aa5fa9 Description: MOSFET N-CH 30V 13A 8TSDSON-25
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
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100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
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CY7C63823-SXCT CY7C63823-SXCT Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 24-SOIC
Part Status: Last Time Buy
Supplier Device Package: 24-SOIC
Standards: USB 2.0
Protocol: USB
Current - Supply: 40mA
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Interface: GPIO, SPI
Function: Controller
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IFX91041EJV33XUMA1 IFX91041EJV33XUMA1 Infineon Technologies Infineon-IFX91041-DS-v01_01-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a304320d39d59012153afb91a0548&ack=t Description: IC REG BUCK 3.3V 1.8A DSO-8-27
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-8-27
Topology: Buck
Voltage - Input (Max): 45V
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TLE4997A8DE0300XUMA1 TLE4997A8DE0300XUMA1 Infineon Technologies Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f Description: MAG SWITCH SPEED SENSOR 8TDSO
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TDSO-8-1
Current - Supply (Max): 10mA
Current - Output (Max): 1mA
Sensing Range: ±50mT ~ ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: 1.32kHz
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Axis: Single
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Programmable
Part Status: Active
Packaging: Cut Tape (CT)
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5+6.85 EUR
10+6.56 EUR
25+6.21 EUR
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500+5.37 EUR
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62-0170PBF 62-0170PBF Infineon Technologies IRF7103QPbF.pdf Description: MOSFET N-CH 50V 3A 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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ICE2A280ZXKLA1 ICE2A280ZXKLA1 Infineon Technologies Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 50 W
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DD710N16KHPSA2 DD710N16KHPSA2 Infineon Technologies Infineon-DD710N16K-DS-v03_01-en_de.pdf?fileId=5546d461464245d30146668f1b8b60e5 Description: DIODE MOD GP 1600V 710A MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 710A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 2500 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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CY8C5248LTI-030 CY8C5248LTI-030 Infineon Technologies CY8C52.pdf Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
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BTF3050EJXUMA1 BTF3050EJXUMA1 Infineon Technologies Infineon-BTF3050EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea007020e80 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
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BTF3050EJXUMA1 BTF3050EJXUMA1 Infineon Technologies Infineon-BTF3050EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea007020e80 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
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IDC50S120C5X7SA1 Infineon Technologies Description: SIC CHIP
Packaging: Bulk
Part Status: Active
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BSM300GA120DLCSHOSA1 Infineon Technologies Description: IGBT MOD 1200V 570A 2250W
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BSM300GA120DLCSHOSA1 Infineon Technologies Description: IGBT MOD 1200V 570A 2250W
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
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BSM300GA120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 430A 2500W MOD
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 430 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 300A
Operating Temperature: 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TLE9262QXXUMA2 TLE9262QXXUMA2 Infineon Technologies Infineon-TLE9262QX-DS-v01_01-EN.pdf?fileId=5546d4625a888733015a896d2df83e2b Description: IC INTERFACE SPECIALIZED 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: PG-VQFN-48-31
Applications: Automotive
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1 Infineon Technologies Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
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CY25560SXCT CY25560SXCT Infineon Technologies Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3 Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY8C4025LQS-S411T CY8C4025LQS-S411T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY8C4024LQS-S411T CY8C4024LQS-S411T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Produkt ist nicht verfügbar
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CY8C4024LQS-S411 CY8C4024LQS-S411 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: PSOC4 - GENERAL
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
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CY8C4045LQS-S411T CY8C4045LQS-S411T Infineon Technologies Infineon-Automotive_PSOC_4_PSOC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSOC-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4025LQS-S411 CY8C4025LQS-S411 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
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FF900R12IP4DBOSA2 FF900R12IP4DBOSA2 Infineon Technologies Infineon-FF900R12IP4D-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011febb2e5e83ed3 Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
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370015736 Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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370014321 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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370011602 Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKP04N60TXKSA1 IKP04N60TXKSA1 Infineon Technologies IKP04N60T.pdf Description: IGBT TRENCH FS 600V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 143µJ
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
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IPW65R095C7XKSA1 IPW65R095C7XKSA1 Infineon Technologies DS_IPW65R095C7_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30434208e5fd01420de7a9d56470 Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
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IPP029N06NAKSA1 IPP029N06NAKSA1 Infineon Technologies IPP029N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465bff03f62ec Description: MOSFET N-CH 60V 24A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
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IDW15G120C5BFKSA1 IDW15G120C5BFKSA1 Infineon Technologies Infineon-20140610_IDW15G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146955307626a15 Description: DIODE ARR SIC 1200V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
auf Bestellung 240 Stücke:
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1+18.29 EUR
30+14.6 EUR
120+13.06 EUR
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ISC026N03L5SATMA1 ISC026N03L5SATMA1 Infineon Technologies Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988 Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 21409 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
14+1.31 EUR
100+0.88 EUR
500+0.66 EUR
1000+0.58 EUR
2000+0.56 EUR
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IQE022N06LM5CGSCATMA1 IQE022N06LM5CGSCATMA1 Infineon Technologies Infineon-IQE022N06LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ad6fd51c1 Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
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IQE022N06LM5CGSCATMA1 IQE022N06LM5CGSCATMA1 Infineon Technologies Infineon-IQE022N06LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ad6fd51c1 Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.88 EUR
10+3.84 EUR
100+2.68 EUR
500+2.18 EUR
1000+2.12 EUR
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IQE022N06LM5SCATMA1 IQE022N06LM5SCATMA1 Infineon Technologies Infineon-IQE022N06LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ae26e51c4 Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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IQE022N06LM5SCATMA1 IQE022N06LM5SCATMA1 Infineon Technologies Infineon-IQE022N06LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ae26e51c4 Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.67 EUR
10+3.7 EUR
100+2.58 EUR
500+2.11 EUR
1000+2.1 EUR
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IRFB7534PBF IRFB7534PBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
auf Bestellung 7974 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
50+2.2 EUR
100+1.98 EUR
500+1.6 EUR
1000+1.48 EUR
2000+1.37 EUR
5000+1.34 EUR
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IRFB7734PBF IRFB7734PBF Infineon Technologies irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2 Description: MOSFET N-CH 75V 183A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
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IRFB7545PBF IRFB7545PBF Infineon Technologies irfb7545pbf.pdf?fileId=5546d462533600a401535619e1ca1e66 Description: MOSFET N-CH 60V 95A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 57A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 25 V
auf Bestellung 10322 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
50+1.15 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.67 EUR
5000+0.61 EUR
10000+0.57 EUR
Mindestbestellmenge: 8 Stücke
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FM25L04B-DGTR FM25L04B-DGTR Infineon Technologies Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Memory Organization: 512 x 8
Memory Interface: SPI
Produkt ist nicht verfügbar
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FM25L04B-DGTR FM25L04B-DGTR Infineon Technologies Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2048 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.54 EUR
25+2.47 EUR
50+2.41 EUR
100+2.36 EUR
250+2.29 EUR
500+2.23 EUR
1000+2.18 EUR
Mindestbestellmenge: 7 Stücke
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TD60N16SOFHPSA1 TD60N16SOFHPSA1 Infineon Technologies Infineon-TT60N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04a8e952e26 Description: SCR MODULE 1.6KV 90A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 90 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 55 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 250 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.58 EUR
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TLF50201ELXUMA2 Infineon-TLF50201EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2a3b741e5
TLF50201ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLF50201ELXUMA2 Infineon-TLF50201EL-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969d2a3b741e5
TLF50201ELXUMA2
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.24 EUR
10+3.16 EUR
25+2.89 EUR
100+2.59 EUR
250+2.45 EUR
500+2.36 EUR
1000+2.29 EUR
Mindestbestellmenge: 5 Stücke
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IDV08E65D2XKSA1 DS_IDV08E65D2_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6956ef27064a
IDV08E65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 8A PGTO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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ICE3AR10080CJZXKLA1 Infineon-ICE3AR10080CJZ-DS-v02_00-en.pdf?fileId=db3a3043345a30bc0134891d7624344f
ICE3AR10080CJZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Power (Watts): 22 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Produkt ist nicht verfügbar
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ICE3AR1580VJZXKLA1 Infineon-ICE3AR1580VJZ-DS-v02_00-en.pdf?fileId=5546d4614546039901456f0d6d8d4165
ICE3AR1580VJZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 57 W
Part Status: Active
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.38 EUR
10+2.5 EUR
50+2.15 EUR
100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
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ICE3AR4780VJZXKLA1 Infineon-ICE3AR4780VJZ-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141ffe81b683068
ICE3AR4780VJZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 31 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 1282 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.89 EUR
10+2.13 EUR
50+1.82 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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ICE3AR1080VJZXKLA1 Infineon-ICE3AR1080VJZ-DS-v02_00-en.pdf?fileId=5546d4614546039901456f0482844148
ICE3AR1080VJZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 71 W
Produkt ist nicht verfügbar
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CY7C1345S-100AXCT
CY7C1345S-100AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Memory Organization: 128K x 36
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1325S-100AXCT
CY7C1325S-100AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IM111X3Q1BAUMA1 Infineon-IM111-X3Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56dfc220201
IM111X3Q1BAUMA1
Hersteller: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IM111X3Q1BAUMA1 Infineon-IM111-X3Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56dfc220201
IM111X3Q1BAUMA1
Hersteller: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IM111X3Q1BAUMA1 Infineon-IM111-X3Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56dfc220201
IM111X3Q1BAUMA1
Hersteller: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Bulk
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
auf Bestellung 2117 Stücke:
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52+9.38 EUR
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PEF 20256 E V3.2-G PEF20256.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 323FCLBGA
Power (Watts): 3 W
Part Status: Obsolete
Supplier Device Package: 323-FCLBGA
Current - Supply: 200mA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Interface: HDLC, PPP, SS7, TMA
Function: Multichannel Network Interface Controller (MUNICH)
Mounting Type: Surface Mount
Package / Case: 323-BBGA, FCBGA
Packaging: Tray
Produkt ist nicht verfügbar
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BSM75GD120DLCBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 125A 500W
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 92 µA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Not For New Designs
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Produkt ist nicht verfügbar
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XMC4200F64F256BAXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4200F64F256BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
auf Bestellung 523 Stücke:
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AnzahlPreis
2+12.13 EUR
10+9.39 EUR
25+8.7 EUR
160+7.75 EUR
320+7.51 EUR
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XMC1401F064F0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1401F064F0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1401F064F0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1401F064F0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
auf Bestellung 657 Stücke:
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AnzahlPreis
5+4.31 EUR
10+3.21 EUR
25+2.94 EUR
100+2.64 EUR
250+2.5 EUR
500+2.42 EUR
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SIGC100T60R3EX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Produkt ist nicht verfügbar
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BSZ0994NSATMA1 Infineon-BSZ0994NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d0251aa5fa9
BSZ0994NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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BSZ0994NSATMA1 Infineon-BSZ0994NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d0251aa5fa9
BSZ0994NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 4962 Stücke:
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AnzahlPreis
9+1.99 EUR
15+1.25 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
2000+0.53 EUR
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CY7C63823-SXCT download
CY7C63823-SXCT
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Part Status: Last Time Buy
Supplier Device Package: 24-SOIC
Standards: USB 2.0
Protocol: USB
Current - Supply: 40mA
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Interface: GPIO, SPI
Function: Controller
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IFX91041EJV33XUMA1 Infineon-IFX91041-DS-v01_01-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a304320d39d59012153afb91a0548&ack=t
IFX91041EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 3.3V 1.8A DSO-8-27
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-8-27
Topology: Buck
Voltage - Input (Max): 45V
Produkt ist nicht verfügbar
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TLE4997A8DE0300XUMA1 Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f
TLE4997A8DE0300XUMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TDSO-8-1
Current - Supply (Max): 10mA
Current - Output (Max): 1mA
Sensing Range: ±50mT ~ ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: 1.32kHz
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Axis: Single
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Programmable
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4980 Stücke:
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AnzahlPreis
3+7.64 EUR
5+6.85 EUR
10+6.56 EUR
25+6.21 EUR
50+5.97 EUR
100+5.76 EUR
500+5.37 EUR
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62-0170PBF IRF7103QPbF.pdf
62-0170PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 50V 3A 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 8000 Stücke:
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ICE2A280ZXKLA1 Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac
ICE2A280ZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 50 W
Produkt ist nicht verfügbar
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DD710N16KHPSA2 Infineon-DD710N16K-DS-v03_01-en_de.pdf?fileId=5546d461464245d30146668f1b8b60e5
DD710N16KHPSA2
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 710A MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 710A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 2500 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Produkt ist nicht verfügbar
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CY8C5248LTI-030 CY8C52.pdf
CY8C5248LTI-030
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
Produkt ist nicht verfügbar
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BTF3050EJXUMA1 Infineon-BTF3050EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea007020e80
BTF3050EJXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
Produkt ist nicht verfügbar
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BTF3050EJXUMA1 Infineon-BTF3050EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea007020e80
BTF3050EJXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
auf Bestellung 919 Stücke:
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AnzahlPreis
9+2.15 EUR
12+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.14 EUR
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IDC50S120C5X7SA1
Hersteller: Infineon Technologies
Description: SIC CHIP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSM300GA120DLCSHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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2+417.95 EUR
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BSM300GA120DLCSHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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BSM300GA120DN2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 430A 2500W MOD
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 430 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 300A
Operating Temperature: 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TLE9262QXXUMA2 Infineon-TLE9262QX-DS-v01_01-EN.pdf?fileId=5546d4625a888733015a896d2df83e2b
TLE9262QXXUMA2
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: PG-VQFN-48-31
Applications: Automotive
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
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AnzahlPreis
166+2.71 EUR
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CY25560SXCT Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3
CY25560SXCT
Hersteller: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4025LQS-S411T Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
CY8C4025LQS-S411T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4024LQS-S411T Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
CY8C4024LQS-S411T
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4024LQS-S411 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
CY8C4024LQS-S411
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.6 EUR
10+5.05 EUR
25+4.66 EUR
100+4.26 EUR
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CY8C4045LQS-S411T Infineon-Automotive_PSOC_4_PSOC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSOC-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
CY8C4045LQS-S411T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4025LQS-S411 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
CY8C4025LQS-S411
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+8.89 EUR
10+6.77 EUR
25+6.24 EUR
100+5.65 EUR
490+5.21 EUR
980+5.07 EUR
1470+5 EUR
2940+4.9 EUR
Mindestbestellmenge: 2 Stücke
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FF900R12IP4DBOSA2 Infineon-FF900R12IP4D-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011febb2e5e83ed3
FF900R12IP4DBOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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370015736
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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370014321
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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370011602
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKP04N60TXKSA1 IKP04N60T.pdf
IKP04N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 143µJ
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.19 EUR
50+1.52 EUR
100+1.35 EUR
Mindestbestellmenge: 6 Stücke
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IPW65R095C7XKSA1 DS_IPW65R095C7_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30434208e5fd01420de7a9d56470
IPW65R095C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+8.89 EUR
30+5.05 EUR
120+4.2 EUR
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IPP029N06NAKSA1 IPP029N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465bff03f62ec
IPP029N06NAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.8 EUR
50+2.42 EUR
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IDW15G120C5BFKSA1 Infineon-20140610_IDW15G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146955307626a15
IDW15G120C5BFKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 1200V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+18.29 EUR
30+14.6 EUR
120+13.06 EUR
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ISC026N03L5SATMA1 Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988
ISC026N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 21409 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+1.99 EUR
14+1.31 EUR
100+0.88 EUR
500+0.66 EUR
1000+0.58 EUR
2000+0.56 EUR
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IQE022N06LM5CGSCATMA1 Infineon-IQE022N06LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ad6fd51c1
IQE022N06LM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
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IQE022N06LM5CGSCATMA1 Infineon-IQE022N06LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ad6fd51c1
IQE022N06LM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+5.88 EUR
10+3.84 EUR
100+2.68 EUR
500+2.18 EUR
1000+2.12 EUR
Mindestbestellmenge: 3 Stücke
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IQE022N06LM5SCATMA1 Infineon-IQE022N06LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ae26e51c4
IQE022N06LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
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IQE022N06LM5SCATMA1 Infineon-IQE022N06LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d7ae26e51c4
IQE022N06LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.67 EUR
10+3.7 EUR
100+2.58 EUR
500+2.11 EUR
1000+2.1 EUR
Mindestbestellmenge: 4 Stücke
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IRFB7534PBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFB7534PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
auf Bestellung 7974 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.42 EUR
50+2.2 EUR
100+1.98 EUR
500+1.6 EUR
1000+1.48 EUR
2000+1.37 EUR
5000+1.34 EUR
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IRFB7734PBF irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2
IRFB7734PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 183A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.14 EUR
Mindestbestellmenge: 5 Stücke
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IRFB7545PBF irfb7545pbf.pdf?fileId=5546d462533600a401535619e1ca1e66
IRFB7545PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 95A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 57A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 25 V
auf Bestellung 10322 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.45 EUR
50+1.15 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.67 EUR
5000+0.61 EUR
10000+0.57 EUR
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FM25L04B-DGTR Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L04B-DGTR
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Memory Organization: 512 x 8
Memory Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FM25L04B-DGTR Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L04B-DGTR
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2048 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.73 EUR
10+2.54 EUR
25+2.47 EUR
50+2.41 EUR
100+2.36 EUR
250+2.29 EUR
500+2.23 EUR
1000+2.18 EUR
Mindestbestellmenge: 7 Stücke
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TD60N16SOFHPSA1 Infineon-TT60N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04a8e952e26
TD60N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 90A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 90 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 55 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 250 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+45.58 EUR
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