Produkte > IXYS > Alle Produkte des Herstellers IXYS (18385) > Seite 307 nach 307

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXGT6N170AHV IXGT6N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE68E13FD1F820&compId=IXGT6N170AHV.pdf?ci_sign=0ced16e3aeebf14e2af3ffb4ae4cc3c894f51d76 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXTA1N170DHV IXTA1N170DHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTH1N170DHV IXTH1N170DHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXBH42N170A IXBH42N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF8470C3B0F820&compId=IXBH(t)42N170A.pdf?ci_sign=73101f7c52db6aeeb6aa4472f2d3884735132435 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 188nC
Turn-on time: 33ns
Turn-off time: 308ns
Power dissipation: 357W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXBK75N170 IXBK75N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF110B4398918BF&compId=IXBK(X)75N170.pdf?ci_sign=b922e90d92cc76b2a480c32f8c12d775523c1cbc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.35µC
Turn-on time: 277ns
Turn-off time: 840ns
Power dissipation: 1.04kW
Collector current: 75A
Pulsed collector current: 580A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXGT6N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE68E13FD1F820&compId=IXGT6N170AHV.pdf?ci_sign=0ced16e3aeebf14e2af3ffb4ae4cc3c894f51d76
IXGT6N170AHV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXTA1N170DHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5
IXTA1N170DHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTH1N170DHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDD145E54D5820&compId=IXTA(H)1N170DHV.pdf?ci_sign=28dde988f0d317d0dd347e6a30f2aceb1f0422d5
IXTH1N170DHV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXBH42N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF8470C3B0F820&compId=IXBH(t)42N170A.pdf?ci_sign=73101f7c52db6aeeb6aa4472f2d3884735132435
IXBH42N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 188nC
Turn-on time: 33ns
Turn-off time: 308ns
Power dissipation: 357W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXBK75N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF110B4398918BF&compId=IXBK(X)75N170.pdf?ci_sign=b922e90d92cc76b2a480c32f8c12d775523c1cbc
IXBK75N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.35µC
Turn-on time: 277ns
Turn-off time: 840ns
Power dissipation: 1.04kW
Collector current: 75A
Pulsed collector current: 580A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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