Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
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IXGT6N170AHV | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Gate charge: 18.5nC Turn-on time: 91ns Turn-off time: 271ns Power dissipation: 75W Collector current: 3A Pulsed collector current: 14A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA1N170DHV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns Case: TO263HV Mounting: SMD Kind of package: tube Polarisation: unipolar Drain current: 1A Drain-source voltage: 1.7kV Reverse recovery time: 30ns On-state resistance: 16Ω Power dissipation: 290W Kind of channel: depletion Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH1N170DHV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns Case: TO247HV Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 1A Drain-source voltage: 1.7kV Reverse recovery time: 30ns On-state resistance: 16Ω Power dissipation: 290W Kind of channel: depletion Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH42N170A | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 188nC Turn-on time: 33ns Turn-off time: 308ns Power dissipation: 357W Collector current: 21A Pulsed collector current: 265A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXBK75N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264 Case: TO264 Mounting: THT Kind of package: tube Gate charge: 0.35µC Turn-on time: 277ns Turn-off time: 840ns Power dissipation: 1.04kW Collector current: 75A Pulsed collector current: 580A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXGT6N170AHV |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate charge: 18.5nC
Turn-on time: 91ns
Turn-off time: 271ns
Power dissipation: 75W
Collector current: 3A
Pulsed collector current: 14A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA1N170DHV |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH1N170DHV |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 1A
Drain-source voltage: 1.7kV
Reverse recovery time: 30ns
On-state resistance: 16Ω
Power dissipation: 290W
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXBH42N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 188nC
Turn-on time: 33ns
Turn-off time: 308ns
Power dissipation: 357W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 188nC
Turn-on time: 33ns
Turn-off time: 308ns
Power dissipation: 357W
Collector current: 21A
Pulsed collector current: 265A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXBK75N170 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.35µC
Turn-on time: 277ns
Turn-off time: 840ns
Power dissipation: 1.04kW
Collector current: 75A
Pulsed collector current: 580A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.35µC
Turn-on time: 277ns
Turn-off time: 840ns
Power dissipation: 1.04kW
Collector current: 75A
Pulsed collector current: 580A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH