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VUO82-08NO7 VUO82-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 5 Stücke:
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2+38.67 EUR
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VUO82-14NO7 VUO82-14NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
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VUO82-18NO7 VUO82-18NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888023452F31C0C4&compId=VUO82-18NO7.pdf?ci_sign=73b63ee97f3e1ec78f8ec7ed5409494ee7bf5094 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 8 Stücke:
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2+46.4 EUR
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DSS10-01A DSS10-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: TO220AC
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DSS10-01AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: D2PAK
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DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: GUFP
Version: flat
auf Bestellung 83 Stücke:
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7+10.61 EUR
8+10.02 EUR
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MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Produkt ist nicht verfügbar
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CMA40E1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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IXTF02N450 IXTF02N450 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9172B820&compId=IXTF02N450.pdf?ci_sign=892f85121908800af19c6a6b8b7ea87700a30990 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
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DSEP30-12B DSEP30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFP90N20X3 IXFP90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 297 Stücke:
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11+6.65 EUR
12+6.28 EUR
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IXFP90N20X3M IXFP90N20X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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IXTQ200N10T IXTQ200N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8557B5AE1820&compId=IXTH(Q)200N10T.pdf?ci_sign=fabd2ae31ac34d7d3d3b92bb0d92dc142a6b5f45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IXTK200N10P IXTK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
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5+14.41 EUR
6+13.63 EUR
10+13.11 EUR
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IXFN200N10P IXFN200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 150ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTA02N250HV IXTA02N250HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7A7820&compId=IXTA(T)02N250HV.pdf?ci_sign=248584949d99d8ddcf028d2963da8072c9e56a46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
auf Bestellung 295 Stücke:
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7+10.31 EUR
8+9.74 EUR
50+9.37 EUR
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IXTH02N250 IXTH02N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
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VUO86-16NO7 VUO86-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7C6A4B9FAE469&compId=VUO86-16NO7.pdf?ci_sign=a88f7f008cedc2c13da3d6b2ce3fe715a9f7945d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 432 Stücke:
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5+15.93 EUR
25+15.27 EUR
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IXFA130N15X3 IXFA130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
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MMIX1T550N055T2
+1
MMIX1T550N055T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 20 Stücke:
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2+46.58 EUR
10+44.84 EUR
20+44.79 EUR
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LIA136 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA136STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFH6N120 IXFH6N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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7+10.74 EUR
8+10.15 EUR
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IXFL32N120P IXFL32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
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IXFT16N120P IXFT16N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
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GBO25-12NO1 GBO25-12NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C850CB0B068B8BF&compId=GBO25-12NO1.pdf?ci_sign=6e99f6686e059ec6a191f6bfefb6640334f22287 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 37 Stücke:
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VBO25-12NO2 VBO25-12NO2 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B14FB4DB5AE0C7&compId=VBO25_ser.pdf?ci_sign=901c93b9e710bb3b35cf523526fb1ef18c73cc62 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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10+22.84 EUR
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DSP25-12AT-TUB DSP25-12AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
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IXTT10N100D2 IXTT10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D IXTT10N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTH10N100D2 IXTH10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT110N10L2 IXTT110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTH110N10L2 IXTH110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTQ110N10P IXTQ110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTT110N10P IXTT110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTP80N075L2 IXTP80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 182 Stücke:
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IXTH80N075L2 IXTH80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 275 Stücke:
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10+7.56 EUR
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IXTA80N075L2 IXTA80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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DSA15I45PA DSA15I45PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E6C7B3F538BF&compId=DSA15I45PA.pdf?ci_sign=42a4764506b63c76dc332c69ee294d95e673cf87 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
auf Bestellung 587 Stücke:
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166+0.43 EUR
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176+0.41 EUR
178+0.4 EUR
250+0.39 EUR
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DSA15IM45IB DSA15IM45IB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9044DB3B2F8BF&compId=DSA15IM45IB.pdf?ci_sign=d799d9985601cddeeb334e355aa21f9928a56a60 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
auf Bestellung 546 Stücke:
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157+0.46 EUR
166+0.43 EUR
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176+0.41 EUR
178+0.4 EUR
250+0.39 EUR
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IXFK66N85X IXFK66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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DPG60B600LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DPG60B600LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 1672 Stücke:
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38+1.9 EUR
62+1.16 EUR
73+0.98 EUR
125+0.57 EUR
132+0.54 EUR
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IXTT500N04T2 IXTT500N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4EC341BB65820&compId=IXTH(T)500N04T2.pdf?ci_sign=fb6c11af8f98e6c971678d0a7c1e31c1713e7404 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IX4426N IX4426N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 1130 Stücke:
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73+0.99 EUR
95+0.76 EUR
100+0.72 EUR
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IX4426MTR IX4426MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 2000 Stücke:
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88+0.82 EUR
90+0.8 EUR
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
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IXBT12N300HV IXBT12N300HV IXYS littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IX9907N IX9907N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 493 Stücke:
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129+0.56 EUR
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IX9908N IX9908N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 200 Stücke:
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87+0.83 EUR
97+0.74 EUR
109+0.66 EUR
125+0.57 EUR
132+0.54 EUR
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CPC1966B CPC1966B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 66 Stücke:
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16+4.58 EUR
17+4.32 EUR
25+4.25 EUR
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CPC1961G CPC1961G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81A00C7&compId=CPC1961.pdf?ci_sign=8a6330b4874c9f3ab50e4bf711f14beab8a555df Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
35+2.06 EUR
37+1.94 EUR
Mindestbestellmenge: 20
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CPC1943G CPC1943G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.21 EUR
12+6.15 EUR
13+5.82 EUR
50+5.63 EUR
100+5.59 EUR
Mindestbestellmenge: 8
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CPC1943GS CPC1943GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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VUO82-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03
VUO82-08NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.67 EUR
Mindestbestellmenge: 2
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VUO82-14NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb
VUO82-14NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
Mindestbestellmenge: 2
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VUO82-18NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888023452F31C0C4&compId=VUO82-18NO7.pdf?ci_sign=73b63ee97f3e1ec78f8ec7ed5409494ee7bf5094
VUO82-18NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.4 EUR
Mindestbestellmenge: 2
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DSS10-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840
DSS10-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: TO220AC
Produkt ist nicht verfügbar
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DSS10-01AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: D2PAK
Produkt ist nicht verfügbar
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DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: GUFP
Version: flat
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.37 EUR
7+10.61 EUR
8+10.02 EUR
Mindestbestellmenge: 5
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MCMA400PD1600PTSF
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Produkt ist nicht verfügbar
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CMA40E1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Produkt ist nicht verfügbar
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IXTF02N450 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9172B820&compId=IXTF02N450.pdf?ci_sign=892f85121908800af19c6a6b8b7ea87700a30990
IXTF02N450
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Produkt ist nicht verfügbar
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DSEP30-12B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49
DSEP30-12B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFP90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.65 EUR
12+6.28 EUR
Mindestbestellmenge: 11
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IXFP90N20X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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IXTQ200N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8557B5AE1820&compId=IXTH(Q)200N10T.pdf?ci_sign=fabd2ae31ac34d7d3d3b92bb0d92dc142a6b5f45
IXTQ200N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXTK200N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d
IXTK200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+13.63 EUR
10+13.11 EUR
Mindestbestellmenge: 5
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IXFN200N10P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c
IXFN200N10P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 150ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTA02N250HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7A7820&compId=IXTA(T)02N250HV.pdf?ci_sign=248584949d99d8ddcf028d2963da8072c9e56a46
IXTA02N250HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.18 EUR
7+10.31 EUR
8+9.74 EUR
50+9.37 EUR
Mindestbestellmenge: 6
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IXTH02N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c
IXTH02N250
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
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VUO86-16NO7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7C6A4B9FAE469&compId=VUO86-16NO7.pdf?ci_sign=a88f7f008cedc2c13da3d6b2ce3fe715a9f7945d
VUO86-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.93 EUR
25+15.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFA130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFA130N15X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Produkt ist nicht verfügbar
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MMIX1T550N055T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.58 EUR
10+44.84 EUR
20+44.79 EUR
Mindestbestellmenge: 2
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LIA136 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA135 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA135S pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA135STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA136S pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LIA136STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFH6N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d
IXFH6N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.5 EUR
7+10.74 EUR
8+10.15 EUR
Mindestbestellmenge: 6
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IXFL32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd
IXFL32N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.86 EUR
Mindestbestellmenge: 3
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IXFT16N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa
IXFT16N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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GBO25-12NO1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C850CB0B068B8BF&compId=GBO25-12NO1.pdf?ci_sign=6e99f6686e059ec6a191f6bfefb6640334f22287
GBO25-12NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.96 EUR
7+10.83 EUR
16+10.41 EUR
Mindestbestellmenge: 5
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VBO25-12NO2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B14FB4DB5AE0C7&compId=VBO25_ser.pdf?ci_sign=901c93b9e710bb3b35cf523526fb1ef18c73cc62
VBO25-12NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.95 EUR
4+23.6 EUR
5+23.58 EUR
10+22.84 EUR
Mindestbestellmenge: 3
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DSP25-12AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e
DSP25-12AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.7 EUR
11+6.58 EUR
Mindestbestellmenge: 8
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IXTT10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTT10N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT10N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50
IXTT10N100D
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTH10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTH10N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
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IXTT110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTT110N10L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTQ110N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033
IXTQ110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTT110N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033
IXTT110N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTP80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTP80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.19 EUR
11+6.71 EUR
12+6.33 EUR
Mindestbestellmenge: 8
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IXTH80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTH80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.25 EUR
9+7.99 EUR
10+7.56 EUR
120+7.26 EUR
Mindestbestellmenge: 7
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IXTA80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTA80N075L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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DSA15I45PA pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E6C7B3F538BF&compId=DSA15I45PA.pdf?ci_sign=42a4764506b63c76dc332c69ee294d95e673cf87
DSA15I45PA
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
166+0.43 EUR
171+0.42 EUR
176+0.41 EUR
178+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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DSA15IM45IB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9044DB3B2F8BF&compId=DSA15IM45IB.pdf?ci_sign=d799d9985601cddeeb334e355aa21f9928a56a60
DSA15IM45IB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
166+0.43 EUR
171+0.42 EUR
176+0.41 EUR
178+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 157
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IXFK66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a
IXFK66N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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DPG60B600LB-TRR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DPG60B600LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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IX4310N
IX4310N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
62+1.16 EUR
73+0.98 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 38
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IXTT500N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4EC341BB65820&compId=IXTH(T)500N04T2.pdf?ci_sign=fb6c11af8f98e6c971678d0a7c1e31c1713e7404
IXTT500N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IX4426N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 1130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
73+0.99 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 52
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IX4426MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
80+0.9 EUR
81+0.89 EUR
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 57
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IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
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IXBT12N300HV littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c
IXBT12N300HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IX9907N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
Mindestbestellmenge: 129
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IX9908N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd
IX9908N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
97+0.74 EUR
109+0.66 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 87
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CPC1966B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85
CPC1966B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.72 EUR
16+4.58 EUR
17+4.32 EUR
25+4.25 EUR
Mindestbestellmenge: 13
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CPC1961G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81A00C7&compId=CPC1961.pdf?ci_sign=8a6330b4874c9f3ab50e4bf711f14beab8a555df
CPC1961G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
35+2.06 EUR
37+1.94 EUR
Mindestbestellmenge: 20
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CPC1943G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.21 EUR
12+6.15 EUR
13+5.82 EUR
50+5.63 EUR
100+5.59 EUR
Mindestbestellmenge: 8
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CPC1943GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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