Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
VUO82-08NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
VUO82-14NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.4kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
VUO82-18NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.8kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSS10-01A | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Kind of package: tube Max. forward voltage: 0.66V Load current: 10A Max. load current: 35A Power dissipation: 90W Max. off-state voltage: 100V Max. forward impulse current: 120A Case: TO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DSS10-01AS-TUB | IXYS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Kind of package: tube Max. forward voltage: 0.66V Load current: 10A Max. load current: 35A Power dissipation: 90W Max. off-state voltage: 100V Max. forward impulse current: 120A Case: D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
DMA40U1800GU | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A Leads: flat pin Type of bridge rectifier: three-phase Electrical mounting: THT Max. forward voltage: 0.74V Load current: 40A Max. forward impulse current: 370A Max. off-state voltage: 1.8kV Case: GUFP Version: flat |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
MCMA400PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA Semiconductor structure: double series Type of semiconductor module: diode-thyristor Case: SimBus F Electrical mounting: Press-Fit; screw Max. forward impulse current: 10kA Load current: 400A Max. off-state voltage: 1.6kV Max. load current: 630A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CMA40E1600HR | IXYS |
![]() Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube Case: ISO247™ Mounting: THT Kind of package: tube Type of thyristor: thyristor Gate current: 50/80mA Max. forward impulse current: 470A Load current: 40A Max. off-state voltage: 1.6kV Max. load current: 63A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IXTF02N450 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 0.2A Power dissipation: 78W Case: ISOPLUS i4-pac™ x024c On-state resistance: 625Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DSEP30-12B | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Case: TO247-2 Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Reverse recovery time: 35ns Max. forward voltage: 3.75V Load current: 30A Power dissipation: 165W Max. forward impulse current: 200A Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Mounting: THT Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
MCC312-16io1 | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y1 Max. forward voltage: 1.32V Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXFP90N20X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 85ns |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFP90N20X3M | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 85ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTQ200N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 550W Case: TO3P On-state resistance: 5.5mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 76ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTK200N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 800W Case: TO264 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFN200N10P | IXYS |
![]() ![]() Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 400A Power dissipation: 680W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 7.5mΩ Gate charge: 235nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Reverse recovery time: 150ns Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTA02N250HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us Mounting: SMD Polarisation: unipolar Reverse recovery time: 1.5µs Drain current: 0.2A Power dissipation: 83W On-state resistance: 450Ω Drain-source voltage: 2.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Case: TO263 Kind of package: tube |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTH02N250 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us Features of semiconductor devices: standard power mosfet Case: TO247-3 Kind of package: tube Polarisation: unipolar Reverse recovery time: 1.5µs Drain current: 0.2A Power dissipation: 83W On-state resistance: 450Ω Drain-source voltage: 2.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
VUO86-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 86A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: module Max. forward voltage: 1.51V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFA130N15X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263 Kind of channel: enhancement Mounting: SMD Technology: HiPerFET™; X3-Class Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 80nC Reverse recovery time: 80ns On-state resistance: 9mΩ Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO263 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() +1 |
MMIX1T550N055T2 | IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W Type of transistor: N-MOSFET Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 2kA Power dissipation: 830W Case: SMPD Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 595nC Kind of channel: enhancement Reverse recovery time: 100ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
LIA136 | IXYS |
![]() Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
LIA135 | IXYS |
![]() Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
LIA135S | IXYS |
![]() Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
LIA135STR | IXYS |
![]() Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
LIA136S | IXYS |
![]() Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
LIA136STR | IXYS |
![]() Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IXFH6N120 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFL32N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Power dissipation: 520W Case: ISOPLUS i5-pac™ On-state resistance: 0.34Ω Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFT16N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268 Mounting: SMD Case: TO268 Polarisation: unipolar Gate charge: 0.12µC On-state resistance: 0.95Ω Drain current: 16A Power dissipation: 660W Drain-source voltage: 1.2kV Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
GBO25-12NO1 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Version: flat Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 25A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: GBFP Kind of package: tube Leads: flat pin |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
VBO25-12NO2 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSP25-12AT-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Type of diode: rectifying Mounting: SMD Max. forward voltage: 1.16V Power dissipation: 160W Load current: 25A Max. forward impulse current: 0.3kA Max. off-state voltage: 1.2kV Case: D3PAK Semiconductor structure: double series |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTT10N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO268 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 70ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTT10N100D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Pulsed drain current: 20A Power dissipation: 400W Case: TO268 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 850ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTH10N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO247-3 On-state resistance: 1.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 70ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTT110N10L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 600W Case: TO268 On-state resistance: 18mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 230ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTH110N10L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 600W Case: TO247-3 On-state resistance: 18mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 230ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTQ110N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTT110N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXTP80N075L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO220AB On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTH80N075L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTA80N075L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO263 On-state resistance: 24mΩ Mounting: SMD Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
DSA15I45PA | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V Mounting: THT Case: TO220AC Type of diode: Schottky rectifying Power dissipation: 85W Max. forward voltage: 0.63V Load current: 15A Max. off-state voltage: 45V Max. forward impulse current: 340A Semiconductor structure: single diode Kind of package: tube |
auf Bestellung 587 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DSA15IM45IB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W Mounting: THT Case: TO262 Type of diode: Schottky rectifying Power dissipation: 85W Max. forward voltage: 0.63V Load current: 15A Max. off-state voltage: 45V Max. forward impulse current: 340A Semiconductor structure: single diode Kind of package: tube |
auf Bestellung 546 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXFK66N85X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 66A Power dissipation: 1.25kW Case: TO264 On-state resistance: 65mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
DPG60B600LB-TRR | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 2.21V Load current: 60A Max. forward impulse current: 250A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DPG60B600LB-TUB | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: tube Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 2.21V Load current: 60A Max. forward impulse current: 250A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 5...24V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
auf Bestellung 1672 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IXTT500N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Reverse recovery time: 84ns Gate charge: 405nC On-state resistance: 1.6mΩ Power dissipation: 1kW Case: TO268 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IX4426N | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: low-side; MOSFET gate driver Kind of output: inverting Kind of package: tube Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V |
auf Bestellung 1130 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IX4426MTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...30V Case: DFN8 Kind of output: inverting Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver Type of integrated circuit: driver |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IX4426NTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: low-side; MOSFET gate driver Kind of output: inverting Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IXBT12N300HV | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268 Case: TO268 Mounting: SMD Features of semiconductor devices: high voltage Type of transistor: IGBT Gate charge: 62nC Turn-on time: 64ns Turn-off time: 180ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 98A Power dissipation: 160W Collector-emitter voltage: 3kV Technology: BiMOSFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IX9907N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Mounting: SMD Operating voltage: 650V DC Kind of package: tube Integrated circuit features: linear dimming; PWM |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IX9908N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Mounting: SMD Operating voltage: 650V DC Kind of package: tube Integrated circuit features: linear dimming; PWM |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC1966B | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase Operating temperature: -40...85°C Turn-on time: 20µs Max. operating current: 3A Body dimensions: 21.08x16.76x3.3mm Control current max.: 50mA Switched voltage: max. 800V AC Relay variant: 1-phase Insulation voltage: 5kV Case: SO8 Switching method: zero voltage switching Mounting: SMT Type of relay: solid state |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC1961G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 250mA Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Switched voltage: max. 600V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: DIP8 Switching method: zero voltage switching Mounting: THT Type of relay: solid state |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC1943G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 0.5A Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Switched voltage: max. 400V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: DIP6 Switching method: zero voltage switching Mounting: THT Type of relay: solid state |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
CPC1943GS | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 0.5A Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Switched voltage: max. 400V AC Relay variant: 1-phase Insulation voltage: 3.75kV Case: DIP6 Switching method: zero voltage switching Mounting: SMT Type of relay: solid state |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
VUO82-08NO7 |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.67 EUR |
VUO82-14NO7 |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 42.53 EUR |
VUO82-18NO7 |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.4 EUR |
DSS10-01A |
![]() |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: TO220AC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSS10-01AS-TUB |
![]() |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMA40U1800GU |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: GUFP
Version: flat
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: GUFP
Version: flat
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.37 EUR |
7+ | 10.61 EUR |
8+ | 10.02 EUR |
MCMA400PD1600PTSF |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CMA40E1600HR |
![]() |
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTF02N450 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSEP30-12B |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC312-16io1 |
![]() |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP90N20X3 |
![]() ![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.65 EUR |
12+ | 6.28 EUR |
IXFP90N20X3M |
![]() ![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ200N10T |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
IXTK200N10P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.41 EUR |
6+ | 13.63 EUR |
10+ | 13.11 EUR |
IXFN200N10P | ![]() |
![]() |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 150ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 150ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA02N250HV |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.18 EUR |
7+ | 10.31 EUR |
8+ | 9.74 EUR |
50+ | 9.37 EUR |
IXTH02N250 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VUO86-16NO7 |
![]() |
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.93 EUR |
25+ | 15.27 EUR |
IXFA130N15X3 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMIX1T550N055T2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.58 EUR |
10+ | 44.84 EUR |
20+ | 44.79 EUR |
LIA136 |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LIA135 |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LIA135S |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LIA135STR |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LIA136S |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LIA136STR |
![]() |
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFH6N120 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.5 EUR |
7+ | 10.74 EUR |
8+ | 10.15 EUR |
IXFL32N120P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.86 EUR |
IXFT16N120P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GBO25-12NO1 |
![]() |
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.96 EUR |
7+ | 10.83 EUR |
16+ | 10.41 EUR |
VBO25-12NO2 |
![]() |
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.95 EUR |
4+ | 23.6 EUR |
5+ | 23.58 EUR |
10+ | 22.84 EUR |
DSP25-12AT-TUB |
![]() |
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.7 EUR |
11+ | 6.58 EUR |
IXTT10N100D2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTT10N100D |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH10N100D2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTT110N10L2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTH110N10L2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ110N10P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTT110N10P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP80N075L2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.19 EUR |
11+ | 6.71 EUR |
12+ | 6.33 EUR |
IXTH80N075L2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.25 EUR |
9+ | 7.99 EUR |
10+ | 7.56 EUR |
120+ | 7.26 EUR |
IXTA80N075L2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSA15I45PA |
![]() |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
166+ | 0.43 EUR |
171+ | 0.42 EUR |
176+ | 0.41 EUR |
178+ | 0.4 EUR |
250+ | 0.39 EUR |
DSA15IM45IB |
![]() |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
166+ | 0.43 EUR |
171+ | 0.42 EUR |
176+ | 0.41 EUR |
178+ | 0.4 EUR |
250+ | 0.39 EUR |
IXFK66N85X |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DPG60B600LB-TRR |
![]() |
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DPG60B600LB-TUB |
![]() |
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IX4310N |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.9 EUR |
62+ | 1.16 EUR |
73+ | 0.98 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
IXTT500N04T2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IX4426N |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
auf Bestellung 1130 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
73+ | 0.99 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
IX4426MTR |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Case: DFN8
Kind of output: inverting
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
80+ | 0.9 EUR |
81+ | 0.89 EUR |
88+ | 0.82 EUR |
90+ | 0.8 EUR |
IX4426NTR |
![]() |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXBT12N300HV |
![]() |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IX9907N |
![]() |
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
IX9908N |
![]() |
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
CPC1966B |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.72 EUR |
16+ | 4.58 EUR |
17+ | 4.32 EUR |
25+ | 4.25 EUR |
CPC1961G |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.6 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
CPC1943G |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.21 EUR |
12+ | 6.15 EUR |
13+ | 5.82 EUR |
50+ | 5.63 EUR |
100+ | 5.59 EUR |
CPC1943GS |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |