| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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LDA212 | IXYS |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Mounting: THT Case: DIP8 Turn-on time: 8µs Turn-off time: 345µs Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LDA212STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LDA213STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTP10P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 414ns |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP10P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -10A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 0.35Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 97ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MDMA450UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA360UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA210UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 225A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA280UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTA120N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO263 On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 35ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTH420N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Power dissipation: 935W Case: TO247-3 On-state resistance: 2mΩ Mounting: THT Gate charge: 315nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 74ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTA220N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO263 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 45ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTA220N04T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO263-7 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 45ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTN17N120L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: SOT227B Electrical mounting: screw On-state resistance: 0.9Ω Pulsed drain current: 34A Power dissipation: 540W Technology: Linear™ Gate-source voltage: ±40V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 1.83µs Polarisation: unipolar Gate charge: 155nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXFA36N60X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Mounting: SMD Reverse recovery time: 180ns Drain-source voltage: 600V Drain current: 36A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: TO263 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXFH36N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Mounting: THT Reverse recovery time: 180ns Drain-source voltage: 600V Drain current: 36A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXFH48N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Mounting: THT Reverse recovery time: 163ns Drain-source voltage: 600V Drain current: 48A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube Gate charge: 38nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 68A Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXFH78N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W Mounting: THT Reverse recovery time: 205ns Drain-source voltage: 600V Drain current: 78A On-state resistance: 38mΩ Type of transistor: N-MOSFET Power dissipation: 780W Polarisation: unipolar Kind of package: tube Gate charge: 70nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXFH98N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W Mounting: THT Reverse recovery time: 220ns Drain-source voltage: 600V Drain current: 98A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 90nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFP36N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Mounting: THT Reverse recovery time: 180ns Drain-source voltage: 600V Drain current: 36A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MID145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Case: Y4-M5 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 200A Application: fans; for pump; motors; photovoltaics Power dissipation: 700W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: NPT Topology: boost chopper Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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VUO122-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA Case: ECO-PAC 2 Max. forward impulse current: 1kA Electrical mounting: THT Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase Leads: wire Ø 1.5mm Max. off-state voltage: 1.2kV Max. forward voltage: 1.13V Load current: 125A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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DSEC60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.74V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| DSSK28-006BS-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.52V Max. forward impulse current: 0.3kA Kind of package: tube Max. load current: 35A Power dissipation: 90W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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VUO80-18NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A Type of bridge rectifier: three-phase Max. off-state voltage: 1.8kV Load current: 80A Max. forward impulse current: 0.6kA Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.14V Leads: connectors Case: V1-A-Pack Mechanical mounting: screw Leads dimensions: 2x0.5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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VUO80-08NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 80A Max. forward impulse current: 0.6kA Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.14V Leads: connectors Case: V1-A-Pack Mechanical mounting: screw Leads dimensions: 2x0.5mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LDA212 |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Mounting: THT
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LDA212STR |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LDA213STR |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP10P50P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.55 EUR |
| 14+ | 5.32 EUR |
| 15+ | 5.02 EUR |
| 100+ | 4.83 EUR |
| IXTP10P15T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.97 EUR |
| IXTP102N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA450UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA360UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA210UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA280UB1600PTED |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
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| IXTA120N04T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTH420N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTA220N04T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTA220N04T2-7 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTN17N120L |
|
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 1.83µs
Polarisation: unipolar
Gate charge: 155nC
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 1.83µs
Polarisation: unipolar
Gate charge: 155nC
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| IXFA36N60X3 |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: SMD
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: SMD
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO263
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| IXFH36N60X3 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO247-3
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| IXFH48N60X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Mounting: THT
Reverse recovery time: 163ns
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Mounting: THT
Reverse recovery time: 163ns
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: TO247-3
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| IXFH78N60X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Mounting: THT
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Mounting: THT
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: TO247-3
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| IXFH98N60X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Mounting: THT
Reverse recovery time: 220ns
Drain-source voltage: 600V
Drain current: 98A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Mounting: THT
Reverse recovery time: 220ns
Drain-source voltage: 600V
Drain current: 98A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 90nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: TO247-3
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| IXFP36N60X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 600V
Drain current: 36A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: TO220AB
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| MID145-12A3 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: NPT
Topology: boost chopper
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: NPT
Topology: boost chopper
Type of semiconductor module: IGBT
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| VUO122-12NO7 |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.13V
Load current: 125A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Max. forward impulse current: 1kA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.13V
Load current: 125A
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| DSEC60-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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| DSSK28-006BS-TUB |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. forward impulse current: 0.3kA
Kind of package: tube
Max. load current: 35A
Power dissipation: 90W
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| VUO80-18NO1 |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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| VUO80-08NO1 |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
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