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IXTA60N10T IXTA60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
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IXFK360N10T IXFK360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTQ75N10P IXTQ75N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXTA75N10P IXTA75N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXTP75N10P IXTP75N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXFR200N10P IXFR200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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DH2x61-18A DH2x61-18A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3917980F9A143&compId=DH2x61-18A.pdf?ci_sign=9a38366b86340976e134475ecf6537203b91506d Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
auf Bestellung 206 Stücke:
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2+38.7 EUR
3+38.67 EUR
5+37.21 EUR
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IXFT170N25X3HV IXFT170N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
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LCA110S LCA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A483052991F8BF&compId=lca110.pdf?ci_sign=6db4a72c7d784c5cc2d7115aeb5e0a37f40ff8fb Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110LS LCA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110L LCA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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IXGX50N120C3H1 IXGX50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Case: PLUS247™
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 196nC
Turn-off time: 485ns
Power dissipation: 460W
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
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IXTT68P20T IXTT68P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
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4+18.6 EUR
5+17.59 EUR
10+17.56 EUR
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IXTH68P20T IXTH68P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; 245ns
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
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4+18.1 EUR
5+14.71 EUR
30+14.34 EUR
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LCB716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86B80C7&compId=LCB716.pdf?ci_sign=239a583110832831eb497922a13a6eef8ed42085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
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LBA716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
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IXTH06N220P3HV IXTH06N220P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
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LF21064NTR LF21064NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2421A8BF540CE&compId=LF21064NTR.pdf?ci_sign=e682ca118a42aaf6b437dce60cfc912cc7935749 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
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DSSK38-0025B DSSK38-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8361B9E978BF&compId=DSSK38-0025B.pdf?ci_sign=5945a524ce67c952038b0c59c865bb5bf91e0c81 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 20Ax2; TO220AB; Ufmax: 0.4V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 25V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. forward impulse current: 330A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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IXFT100N30X3HV IXFT100N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: SMD
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
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1+71.5 EUR
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IXTP3N120 IXTP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
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8+9.22 EUR
10+7.34 EUR
11+6.94 EUR
100+6.68 EUR
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IXTH3N120 IXTH3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXFP3N120 IXFP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A2D820&compId=IXFP3N120.pdf?ci_sign=eea5a63569752789e65884b7dc57c6064d9f42e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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IXTA3N120 IXTA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
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IXTA3N120HV IXTA3N120HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC871820&compId=IXTA3N120HV.pdf?ci_sign=cc2fbe5c647ead4e5e76f0a4ba3c372cb9cc3e1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXTK100N25P IXTK100N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90F1896B593E27&compId=IXTK100N25P-DTE.pdf?ci_sign=ca4a750df92eea9f262967bae79b2712e1f8dcc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 27mΩ
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IXFX180N15P IXFX180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC683820&compId=IXFX180N15P.pdf?ci_sign=40187178a4b225c5dfde0aad35e7695313904b5e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFK180N25T IXFK180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFT30N85XHV IXFT30N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2992D6C47820&compId=IXFH30N85X_IXFT30N85XHV.pdf?ci_sign=390b5581f76a713c23254cf56e292a2a68f13ab2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.23Ω
Drain current: 30A
Power dissipation: 695W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 68nC
Reverse recovery time: 160ns
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DSI30-16AS DSI30-16AS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD640807D25B8BF&compId=DSI30-16AS.pdf?ci_sign=cfb14604109bfeb6853a2d73a81795d58f27df7d Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Mounting: SMD
Case: D2PAK
Max. forward voltage: 1.25V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 160W
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
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DMA30IM1600PZ-TUB DMA30IM1600PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB44828817100C4&compId=DMA30IM1600PZ.pdf?ci_sign=4c14a69c06510d6b4ac4e711990bb7aba5b75b6b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Mounting: SMD
Case: TO263ABHV
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 210W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
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DSI30-12AS-TUB DSI30-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
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LF21904NTR LF21904NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2B68AE8C680CE&compId=LF21904NTR.pdf?ci_sign=f046af4b59b042a640f6da7511355db6af15f8d3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
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LF2190NTR LF2190NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
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CPC1219Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; OptoMOS
Case: SIP4
On-state resistance: 16Ω
Mounting: THT
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
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MCD162-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP130N15X4 IXTP130N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2892EBE01F77820&compId=IXTH(P)130N15X4.pdf?ci_sign=7bebcf155b0b8631aec3241bd97b7a01a507017d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 93ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 295 Stücke:
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14+5.22 EUR
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IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
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IXDD630CI IXDD630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 217 Stücke:
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MIXA101W1200EH IXYS MIXA101W1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: MOSFET three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Technology: XPT™
Mechanical mounting: screw
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IXBH12N300 IXBH12N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S IXCP10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Mounting: THT
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO220AB
Type of integrated circuit: driver
auf Bestellung 508 Stücke:
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IXCY10M90S IXCY10M90S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 900V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
auf Bestellung 255 Stücke:
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IXCY10M45S IXCY10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
auf Bestellung 116 Stücke:
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21+3.45 EUR
31+2.33 EUR
33+2.2 EUR
70+2.12 EUR
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VHFD29-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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LCA712 LCA712 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Case: DIP6
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 350µs
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 0.5Ω
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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MEK600-04DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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LCA125 LCA125 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 100 Stücke:
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18+4.2 EUR
22+3.29 EUR
23+3.17 EUR
100+3.06 EUR
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MD16200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
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MDMA210P1600YD IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83687231AA00C4&compId=MDMA210P1600YD.pdf?ci_sign=b427c411ce21d44949c533e9b3d1060607206045 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1301GR CPC1301GR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Case: SO4
Number of channels: 1
Mounting: SMD
Type of optocoupler: optocoupler
CTR@If: 1000-8000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
auf Bestellung 48 Stücke:
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48+1.49 EUR
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VUO82-16NO7 VUO82-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB4CC30B9692143&compId=VUO82-16NO7.pdf?ci_sign=45519a3bdfe60d1d3019f70dbc92c5cf93174716 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 9 Stücke:
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2+44.57 EUR
5+42.76 EUR
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VUO82-12NO7 VUO82-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880186BEAA2C0C4&compId=VUO82-12NO7.pdf?ci_sign=58fb59bf82812a1945f3a1b3d25cceaa134485d5 description Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.6 EUR
5+39.04 EUR
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VUO82-08NO7 VUO82-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 5 Stücke:
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2+38.67 EUR
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VUO82-14NO7 VUO82-14NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.53 EUR
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IXTA60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTA60N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFK360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFK360N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTQ75N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975
IXTQ75N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTA75N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975
IXTA75N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTP75N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975
IXTP75N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFR200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c
IXFR200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DH2x61-18A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3917980F9A143&compId=DH2x61-18A.pdf?ci_sign=9a38366b86340976e134475ecf6537203b91506d
DH2x61-18A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.7 EUR
3+38.67 EUR
5+37.21 EUR
Mindestbestellmenge: 2
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IXFT170N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef
IXFT170N25X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
Produkt ist nicht verfügbar
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LCA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A483052991F8BF&compId=lca110.pdf?ci_sign=6db4a72c7d784c5cc2d7115aeb5e0a37f40ff8fb
LCA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LCA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a
LCA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LCA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a
LCA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LCA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LCA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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IXGX50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893
IXGX50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Case: PLUS247™
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 196nC
Turn-off time: 485ns
Power dissipation: 460W
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXTT68P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3
IXTT68P20T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.6 EUR
5+17.59 EUR
10+17.56 EUR
Mindestbestellmenge: 4
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IXTH68P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3
IXTH68P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; 245ns
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.1 EUR
5+14.71 EUR
30+14.34 EUR
Mindestbestellmenge: 4
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LCB716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86B80C7&compId=LCB716.pdf?ci_sign=239a583110832831eb497922a13a6eef8ed42085
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
Produkt ist nicht verfügbar
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LBA716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
Produkt ist nicht verfügbar
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IXTH06N220P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8
IXTH06N220P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
Produkt ist nicht verfügbar
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LF21064NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2421A8BF540CE&compId=LF21064NTR.pdf?ci_sign=e682ca118a42aaf6b437dce60cfc912cc7935749
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Produkt ist nicht verfügbar
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DSSK38-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8361B9E978BF&compId=DSSK38-0025B.pdf?ci_sign=5945a524ce67c952038b0c59c865bb5bf91e0c81
DSSK38-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 20Ax2; TO220AB; Ufmax: 0.4V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 25V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. forward impulse current: 330A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Produkt ist nicht verfügbar
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IXTA380N036T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0
IXTA380N036T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MG12300D-BN2MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IXFT100N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT100N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: SMD
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTP3N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.22 EUR
10+7.34 EUR
11+6.94 EUR
100+6.68 EUR
Mindestbestellmenge: 8
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IXTH3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTH3N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A2D820&compId=IXFP3N120.pdf?ci_sign=eea5a63569752789e65884b7dc57c6064d9f42e7
IXFP3N120
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTA3N120
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA3N120HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC871820&compId=IXTA3N120HV.pdf?ci_sign=cc2fbe5c647ead4e5e76f0a4ba3c372cb9cc3e1b
IXTA3N120HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTK100N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90F1896B593E27&compId=IXTK100N25P-DTE.pdf?ci_sign=ca4a750df92eea9f262967bae79b2712e1f8dcc2
IXTK100N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
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IXFX180N15P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC683820&compId=IXFX180N15P.pdf?ci_sign=40187178a4b225c5dfde0aad35e7695313904b5e
IXFX180N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK180N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f
IXFK180N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.73 EUR
5+18.16 EUR
10+18.02 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2992D6C47820&compId=IXFH30N85X_IXFT30N85XHV.pdf?ci_sign=390b5581f76a713c23254cf56e292a2a68f13ab2
IXFT30N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Case: TO268HV
On-state resistance: 0.23Ω
Drain current: 30A
Power dissipation: 695W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 68nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSI30-16AS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD640807D25B8BF&compId=DSI30-16AS.pdf?ci_sign=cfb14604109bfeb6853a2d73a81795d58f27df7d
DSI30-16AS
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Mounting: SMD
Case: D2PAK
Max. forward voltage: 1.25V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 160W
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
24+2.97 EUR
Mindestbestellmenge: 16
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DMA30IM1600PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB44828817100C4&compId=DMA30IM1600PZ.pdf?ci_sign=4c14a69c06510d6b4ac4e711990bb7aba5b75b6b
DMA30IM1600PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Mounting: SMD
Case: TO263ABHV
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 210W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
26+2.83 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 23
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DSI30-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0
DSI30-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 18
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LF21904NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2B68AE8C680CE&compId=LF21904NTR.pdf?ci_sign=f046af4b59b042a640f6da7511355db6af15f8d3
LF21904NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
Produkt ist nicht verfügbar
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LF2190NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247
LF2190NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
Produkt ist nicht verfügbar
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CPC1219Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; OptoMOS
Case: SIP4
On-state resistance: 16Ω
Mounting: THT
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Produkt ist nicht verfügbar
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MCD162-16io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTP130N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2892EBE01F77820&compId=IXTH(P)130N15X4.pdf?ci_sign=7bebcf155b0b8631aec3241bd97b7a01a507017d
IXTP130N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 93ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.71 EUR
11+6.92 EUR
13+5.52 EUR
14+5.22 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXDD630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.3 EUR
9+8.14 EUR
10+8.07 EUR
25+7.82 EUR
Mindestbestellmenge: 7
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MIXA101W1200EH MIXA101W1200EH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: MOSFET three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Technology: XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXBH12N300 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602
IXBH12N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Produkt ist nicht verfügbar
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IXCP10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCP10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Mounting: THT
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO220AB
Type of integrated circuit: driver
auf Bestellung 508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
27+2.7 EUR
28+2.56 EUR
50+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXCY10M90S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M90S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 900V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
19+3.86 EUR
20+3.66 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXCY10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
31+2.33 EUR
33+2.2 EUR
70+2.12 EUR
Mindestbestellmenge: 21
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VHFD29-16IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Produkt ist nicht verfügbar
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LCA712 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430
LCA712
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Case: DIP6
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 350µs
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 0.5Ω
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MEK600-04DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Produkt ist nicht verfügbar
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LCA125 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe
LCA125
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
22+3.29 EUR
23+3.17 EUR
100+3.06 EUR
Mindestbestellmenge: 18
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MD16200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
Produkt ist nicht verfügbar
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MDMA210P1600YD pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83687231AA00C4&compId=MDMA210P1600YD.pdf?ci_sign=b427c411ce21d44949c533e9b3d1060607206045 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1301GR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0
CPC1301GR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Case: SO4
Number of channels: 1
Mounting: SMD
Type of optocoupler: optocoupler
CTR@If: 1000-8000%@1mA
Insulation voltage: 5kV
Kind of output: Darlington
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
48+1.49 EUR
Mindestbestellmenge: 46
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VUO82-16NO7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB4CC30B9692143&compId=VUO82-16NO7.pdf?ci_sign=45519a3bdfe60d1d3019f70dbc92c5cf93174716
VUO82-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.57 EUR
5+42.76 EUR
Mindestbestellmenge: 2
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VUO82-12NO7 description pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880186BEAA2C0C4&compId=VUO82-12NO7.pdf?ci_sign=58fb59bf82812a1945f3a1b3d25cceaa134485d5
VUO82-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.6 EUR
5+39.04 EUR
Mindestbestellmenge: 2
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VUO82-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03
VUO82-08NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.67 EUR
Mindestbestellmenge: 2
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VUO82-14NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb
VUO82-14NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
Mindestbestellmenge: 2
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