Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXYH20N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 30nC Kind of package: tube Turn-on time: 51ns Turn-off time: 132ns |
Produkt ist nicht verfügbar |
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IXYP20N65C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 30nC Kind of package: tube Turn-on time: 51ns Turn-off time: 132ns |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP20N65C3D1M | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 9A Power dissipation: 50W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 30nC Kind of package: tube Turn-on time: 51ns Turn-off time: 132ns |
Produkt ist nicht verfügbar |
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IXFK120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 24mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 220ns |
Produkt ist nicht verfügbar |
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IXFX120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 220ns |
Produkt ist nicht verfügbar |
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IXTK120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 505ns |
Produkt ist nicht verfügbar |
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IXTX120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns Mounting: THT Reverse recovery time: 505ns Drain-source voltage: 650V Drain current: 120A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 230nC Kind of channel: enhanced Case: PLUS247™ |
Produkt ist nicht verfügbar |
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IX4426N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting |
auf Bestellung 2138 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4426NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting |
Produkt ist nicht verfügbar |
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IXTK120N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 700W Case: TO264 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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MCMA160P1600YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 160A; Ifmax: 250A; Y4-M6 Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 160A Max. load current: 250A Case: Y4-M6 Max. forward voltage: 1.09V Max. forward impulse current: 4.75kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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MCMA160P1800YA-MI | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 160A; Ifmax: 250A; Y4-M6 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. forward impulse current: 4.75kA Gate current: 150/200mA Max. forward voltage: 1.09V Max. off-state voltage: 1.8kV Load current: 160A Max. load current: 250A Type of module: thyristor Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
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DSEP30-06BR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: ISOPLUS247™ Max. forward voltage: 1.61V Power dissipation: 135W Reverse recovery time: 25ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
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MIXA10W1200TML | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E1-Pack Application: fans; for pump; motors Power dissipation: 65W Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 30A |
Produkt ist nicht verfügbar |
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MIXA10WB1200TML | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 12A Case: E1-Pack Application: fans; for pump; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 63W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: for UPS; motors Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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MKI75-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: for UPS; motors Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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MWI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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IXFR24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.42Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXFT24N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO268 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXFX34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXFX44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXFX44N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXTA300N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Gate charge: 145nC Kind of channel: enhanced Reverse recovery time: 53ns Drain-source voltage: 40V Drain current: 300A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
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IXTB30N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Mounting: THT Polarisation: unipolar Kind of package: tube Case: PLUS264™ Gate charge: 545nC Kind of channel: enhanced Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 800W Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
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IXTN30N100L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Gate charge: 545nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 70A Semiconductor structure: single transistor Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Power dissipation: 800W Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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IXTP300N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Gate charge: 145nC Kind of channel: enhanced Reverse recovery time: 53ns Drain-source voltage: 40V Drain current: 300A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
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DSA50C150HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 25A x2 Power dissipation: 160W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 390A Max. forward voltage: 0.74V |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA60C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 100V Max. forward impulse current: 440A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.78V Load current: 30A x2 |
Produkt ist nicht verfügbar |
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DSA60C150PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 150V Max. forward impulse current: 390A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.8V Load current: 30A x2 |
Produkt ist nicht verfügbar |
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DSA60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Power dissipation: 160W Max. off-state voltage: 45V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 0.66V Load current: 30A x2 |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA60C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 45V Max. forward impulse current: 490A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.67V Load current: 30A x2 |
Produkt ist nicht verfügbar |
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DSA60C60HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Power dissipation: 160W Max. off-state voltage: 60V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 0.75V Load current: 30A x2 |
Produkt ist nicht verfügbar |
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DSA60C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 60V Max. forward impulse current: 0.45kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.77V Load current: 30A x2 |
Produkt ist nicht verfügbar |
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DPF240X200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 1.2kA Max. off-state voltage: 200V Max. forward voltage: 1.06V Load current: 120A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
Produkt ist nicht verfügbar |
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VUM33-06PH | IXYS |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors Polarisation: unipolar Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: V1-B-Pack On-state resistance: 0.12Ω Topology: boost chopper; single-phase diode bridge Power dissipation: 500W Gate charge: 165nC Drain current: 50A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: FASTON connectors |
Produkt ist nicht verfügbar |
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VUM33-05N | IXYS |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; V1-B-Pack; FASTON connectors Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 33A Case: V1-B-Pack Topology: buck chopper; single-phase diode bridge Electrical mounting: FASTON connectors Polarisation: unipolar On-state resistance: 0.12Ω Pulsed drain current: 130A Power dissipation: 310W Gate charge: 0.35µC Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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CPC1961G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; THT; DIP8 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: THT Case: DIP8 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 250mA Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1961GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP8 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 250mA Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1961GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP8 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 250mA Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1963G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; THT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: THT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1963GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1963GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1964B | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 1.5A Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1964BX6 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 1.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1965Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT Max. operating current: 1A Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 260V AC Control current max.: 100mA Mounting: THT Case: SIP4 Body dimensions: 19.2x6.35x3.3mm |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1966B | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 3A Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Type of relay: solid state Turn-on time: 20µs |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1966BX8 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 3A Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Type of relay: solid state |
Produkt ist nicht verfügbar |
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CPC1966Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; THT; SIP4 Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Mounting: THT Case: SIP4 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 3A Relay variant: 1-phase Switched voltage: max. 240V AC Control current max.: 50mA Type of relay: solid state |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1966YX6 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; THT; SIP4 Type of relay: solid state Control current max.: 50mA Max. operating current: 3A Switched voltage: max. 600V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Switching method: instantaneous switching Insulation voltage: 3.75kV Turn-on time: 500µs |
Produkt ist nicht verfügbar |
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CPC1966YX8 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; THT; SIP4 Type of relay: solid state Control current max.: 50mA Max. operating current: 3A Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Turn-on time: 20µs |
Produkt ist nicht verfügbar |
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CPC1967J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1350mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 0.85Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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CPC1972G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; THT; DIP6 Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
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CPC1972GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6 Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
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DSP25-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™ Mounting: THT Kind of package: tube Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 100W Type of diode: rectifying Case: ISOPLUS247™ Max. off-state voltage: 1.6kV Max. forward voltage: 1.23V Load current: 28A x2 |
Produkt ist nicht verfügbar |
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IXFH18N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.66Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IXFN38N100P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A Case: SOT227B Power dissipation: 1kW Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.35µC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 120A Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.21Ω |
Produkt ist nicht verfügbar |
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IXFT18N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Power dissipation: 830W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Drain-source voltage: 1kV Drain current: 18A On-state resistance: 0.66Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IXTA08N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH20N65C3 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Produkt ist nicht verfügbar
IXYP20N65C3D1 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.79 EUR |
22+ | 3.39 EUR |
26+ | 2.76 EUR |
28+ | 2.62 EUR |
IXYP20N65C3D1M |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Produkt ist nicht verfügbar
IXFK120N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
Produkt ist nicht verfügbar
IXFX120N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 220ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 220ns
Produkt ist nicht verfügbar
IXTK120N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 505ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 505ns
Produkt ist nicht verfügbar
IXTX120N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Reverse recovery time: 505ns
Drain-source voltage: 650V
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Case: PLUS247™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Reverse recovery time: 505ns
Drain-source voltage: 650V
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Case: PLUS247™
Produkt ist nicht verfügbar
IX4426N |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
auf Bestellung 2138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
55+ | 1.3 EUR |
75+ | 0.96 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
250+ | 0.7 EUR |
IX4426NTR |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Produkt ist nicht verfügbar
IXTK120N25P |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 22.01 EUR |
5+ | 14.87 EUR |
MCMA160P1600YA |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; Ifmax: 250A; Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Max. load current: 250A
Case: Y4-M6
Max. forward voltage: 1.09V
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; Ifmax: 250A; Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Max. load current: 250A
Case: Y4-M6
Max. forward voltage: 1.09V
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
MCMA160P1800YA-MI |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; Ifmax: 250A; Y4-M6
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Max. forward voltage: 1.09V
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 250A
Type of module: thyristor
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; Ifmax: 250A; Y4-M6
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Max. forward voltage: 1.09V
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 250A
Type of module: thyristor
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
DSEP30-06BR |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
MIXA10W1200TML |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E1-Pack
Application: fans; for pump; motors
Power dissipation: 65W
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 30A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E1-Pack
Application: fans; for pump; motors
Power dissipation: 65W
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 30A
Produkt ist nicht verfügbar
MIXA10WB1200TML |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 63W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 63W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
MKI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
MKI75-06A7 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
MWI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXFR24N80P |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 17.12 EUR |
6+ | 12.23 EUR |
7+ | 11.57 EUR |
IXFR44N80P |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFT24N80P |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFX34N80 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFX44N80P |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFX44N80Q3 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXTA300N04T2 |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
IXTB30N100L |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
IXTN30N100L |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
IXTP300N04T2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
DSA50C150HB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 390A
Max. forward voltage: 0.74V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 390A
Max. forward voltage: 0.74V
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.59 EUR |
15+ | 5.03 EUR |
19+ | 3.8 EUR |
20+ | 3.59 EUR |
DSA60C100PB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 100V
Max. forward impulse current: 440A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 100V
Max. forward impulse current: 440A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Produkt ist nicht verfügbar
DSA60C150PB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Produkt ist nicht verfügbar
DSA60C45HB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.85 EUR |
17+ | 4.36 EUR |
21+ | 3.47 EUR |
22+ | 3.29 EUR |
DSA60C45PB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Produkt ist nicht verfügbar
DSA60C60HB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Produkt ist nicht verfügbar
DSA60C60PB |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Produkt ist nicht verfügbar
DPF240X200NA |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1.2kA
Max. off-state voltage: 200V
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1.2kA
Max. off-state voltage: 200V
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Produkt ist nicht verfügbar
VUM33-06PH |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Polarisation: unipolar
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: V1-B-Pack
On-state resistance: 0.12Ω
Topology: boost chopper; single-phase diode bridge
Power dissipation: 500W
Gate charge: 165nC
Drain current: 50A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: FASTON connectors
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Polarisation: unipolar
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: V1-B-Pack
On-state resistance: 0.12Ω
Topology: boost chopper; single-phase diode bridge
Power dissipation: 500W
Gate charge: 165nC
Drain current: 50A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: FASTON connectors
Produkt ist nicht verfügbar
VUM33-05N |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; V1-B-Pack; FASTON connectors
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 33A
Case: V1-B-Pack
Topology: buck chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Pulsed drain current: 130A
Power dissipation: 310W
Gate charge: 0.35µC
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; V1-B-Pack; FASTON connectors
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 33A
Case: V1-B-Pack
Topology: buck chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Pulsed drain current: 130A
Power dissipation: 310W
Gate charge: 0.35µC
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
CPC1961G |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; THT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; THT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.09 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
CPC1961GS |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1961GSTR |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1963G |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; THT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; THT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 11.78 EUR |
13+ | 5.66 EUR |
14+ | 5.36 EUR |
CPC1963GS |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1963GSTR |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1964B |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1964BX6 |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1965Y |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT
Max. operating current: 1A
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT
Max. operating current: 1A
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.64 EUR |
18+ | 4.02 EUR |
19+ | 3.79 EUR |
CPC1966B |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 20µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 20µs
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.09 EUR |
17+ | 4.36 EUR |
18+ | 4.12 EUR |
CPC1966BX8 |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Produkt ist nicht verfügbar
CPC1966Y |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; THT; SIP4
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: SIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; THT; SIP4
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: SIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Type of relay: solid state
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.29 EUR |
19+ | 3.92 EUR |
20+ | 3.7 EUR |
CPC1966YX6 |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Produkt ist nicht verfügbar
CPC1966YX8 |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
Produkt ist nicht verfügbar
CPC1967J |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 0.85Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 0.85Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
CPC1972G |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; THT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; THT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
CPC1972GS |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
DSP25-16AR |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 100W
Type of diode: rectifying
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Load current: 28A x2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 100W
Type of diode: rectifying
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Load current: 28A x2
Produkt ist nicht verfügbar
IXFH18N100Q3 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFN38N100P |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Case: SOT227B
Power dissipation: 1kW
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Case: SOT227B
Power dissipation: 1kW
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
Produkt ist nicht verfügbar
IXFT18N100Q3 |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 18A
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 18A
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXTA08N100D2 |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.42 EUR |
33+ | 2.2 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |