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IXTT30N50L IXTT30N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTT30N50P IXTT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTH30N50L2 IXTH30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFT30N50P IXFT30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 IXFT30N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH30N50P IXTH30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTQ30N50L2 IXTQ30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTQ30N50P IXTQ30N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTT30N50L2 IXTT30N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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LBA716S LBA716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.67 EUR
10+7.19 EUR
11+6.79 EUR
100+6.54 EUR
Mindestbestellmenge: 8
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LBA110 LBA110 IXYS littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.58 EUR
16+4.59 EUR
17+4.33 EUR
25+4.18 EUR
Mindestbestellmenge: 13
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LBA110S LBA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4E457848318BF&compId=LBA110.pdf?ci_sign=73689aaabb177f26a2e2e3fb3f14154169b75211 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.34 EUR
16+4.59 EUR
17+4.33 EUR
Mindestbestellmenge: 9
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LBA127LS LBA127LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31F60C7&compId=LBA127L.pdf?ci_sign=3ac0051c4930f87a115c7deddf17c4b780b22a0d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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LBA110L LBA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE318C0C7&compId=LBA110L.pdf?ci_sign=184de066e27ca2542f12e744423f8b91c1a51f2f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.49 EUR
16+4.48 EUR
Mindestbestellmenge: 12
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LBA120LS LBA120LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31C20C7&compId=LBA120L.pdf?ci_sign=2ad62a54a436b546b4f1a8cd730e92b0ce345d8b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.05 EUR
13+5.72 EUR
14+5.41 EUR
100+5.28 EUR
Mindestbestellmenge: 8
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LBA120P LBA120P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31A60C7&compId=LBA120.pdf?ci_sign=f74c6a97813a830075cdce289b3840fcd99fe11c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.85 EUR
13+5.61 EUR
14+5.31 EUR
100+5.16 EUR
Mindestbestellmenge: 8
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LBA127L LBA127L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31F60C7&compId=LBA127L.pdf?ci_sign=3ac0051c4930f87a115c7deddf17c4b780b22a0d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.81 EUR
12+6.15 EUR
13+5.82 EUR
100+5.68 EUR
Mindestbestellmenge: 7
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LBA127S LBA127S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31DA0C7&compId=LBA127.pdf?ci_sign=a796dc010099d86c873cf611fca9d02f07d0c904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.74 EUR
12+6.03 EUR
13+5.71 EUR
100+5.49 EUR
Mindestbestellmenge: 11
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LBA716 LBA716 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
11+6.79 EUR
Mindestbestellmenge: 10
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LBA127 LBA127 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31DA0C7&compId=LBA127.pdf?ci_sign=a796dc010099d86c873cf611fca9d02f07d0c904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.31 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 9
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MDD142-16N1 MDD142-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
auf Bestellung 6 Stücke:
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2+61.86 EUR
Mindestbestellmenge: 2
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MEA250-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.54V
Load current: 260A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common anode
Type of semiconductor module: diode
Electrical mounting: screw
Produkt ist nicht verfügbar
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DMA150YC1600NA DMA150YC1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
Produkt ist nicht verfügbar
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DMA150YA1600NA DMA150YA1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
Produkt ist nicht verfügbar
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CPC1966Y CPC1966Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98FCB3ADB02BCF8BF&compId=CPC1966.pdf?ci_sign=d8a0ffe0b0c10a0b312f6bc7b4d31fd7f4a4bc52 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
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18+4.1 EUR
19+3.88 EUR
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DSEI120-12A DSEI120-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 248 Stücke:
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO268AAHV
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
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6+13.08 EUR
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IXTY1N120P IXTY1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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28+2.65 EUR
30+2.43 EUR
32+2.3 EUR
70+2.22 EUR
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IXTP2R4N120P IXTP2R4N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
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14+5.32 EUR
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250+4.83 EUR
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IXLF19N250A IXLF19N250A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9888EDA700978B8BF&compId=IXLF19N250A.pdf?ci_sign=d3577cbb7aeaffc10ab0f4cc6751a99274899f60 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Technology: NPT
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
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IXTK3N250L IXTK3N250L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2846DD8D0BF1820&compId=IXTK(X)3N250L.pdf?ci_sign=a0fc9370e55c233f3a0b05aae09485494edf2e16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns
Case: TO264
Mounting: THT
Kind of package: tube
Drain current: 3A
Power dissipation: 417W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 230nC
Reverse recovery time: 370ns
On-state resistance: 10Ω
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IXTX3N250L IXTX3N250L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2846DD8D0BF1820&compId=IXTK(X)3N250L.pdf?ci_sign=a0fc9370e55c233f3a0b05aae09485494edf2e16 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain current: 3A
Power dissipation: 417W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 230nC
Reverse recovery time: 370ns
On-state resistance: 10Ω
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MCC200-14io1 MCC200-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA1C22EF4718520D6&compId=MCC200-14io1.pdf?ci_sign=30e8433f322486eb978085c608c43a3034c71d17 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC200-18io1 MCC200-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2578EE46615EA&compId=MCC200-18IO1.pdf?ci_sign=9cebf59deee12ac16ee0b117dec34e4e5e3553ef pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA110P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MITA300RF1700PTED IXYS media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: Trench
Mechanical mounting: screw
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IXFR44N50Q IXFR44N50Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CAB820&compId=IXFR44N50Q.pdf?ci_sign=99a97c2b9e5d063cf27fe5a4fef4e55efd7f134a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.19µC
On-state resistance: 0.12Ω
Drain current: 34A
Power dissipation: 313W
Kind of channel: enhancement
Drain-source voltage: 500V
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30+21.88 EUR
120+21.22 EUR
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IXFR44N50Q3 IXFR44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CC1820&compId=IXFR44N50Q3.pdf?ci_sign=ca7c3ddda1e0d4f113690187365893ed7eb3e98e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 93nC
On-state resistance: 154mΩ
Drain current: 25A
Power dissipation: 300W
Kind of channel: enhancement
Drain-source voltage: 500V
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IXTQ44N50P IXTQ44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13E9820&compId=IXTQ44N50P.pdf?ci_sign=5b6b390d0f88dc2b81c15815714aa839131be972 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Case: TO3P
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
Reverse recovery time: 400ns
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 650W
Kind of channel: enhancement
Drain-source voltage: 500V
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IXFH44N50Q3 IXFH44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Case: TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 93nC
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 830W
Kind of channel: enhancement
Drain-source voltage: 500V
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IXFR44N50P IXFR44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C95820&compId=IXFR44N50P.pdf?ci_sign=7af93dd52bee59ebe4814ce2e7c1a8e2f92a4efb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 0.15Ω
Drain current: 24A
Power dissipation: 208W
Kind of channel: enhancement
Drain-source voltage: 500V
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IXFT44N50P IXFT44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 650W
Kind of channel: enhancement
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFT44N50Q3 IXFT44N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 93nC
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 830W
Kind of channel: enhancement
Drain-source voltage: 500V
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IXFN360N15T2 IXFN360N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF63E7A0DAD7820&compId=IXFN360N15T2.pdf?ci_sign=4def48316f0abdbe91810c197e50af3682680042 Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Power dissipation: 1.07kW
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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VGO36-16IO7 VGO36-16IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 65mA
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4+21.26 EUR
10+20.45 EUR
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CPC5620A IXYS media?resourcetype=datasheets&itemid=F3DAF718-2656-43F0-8E3D-5A02640F1862&filename=Littelfuse-Integrated-Circuits-CPC5620-21-Datasheet Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Case: SO32
Mounting: SMD
Kind of package: tube
Supply voltage: 2.8...5.5V DC
Interface: PLI
Integrated circuit features: galvanically isolated
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MCNA95PD2200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 2.2kV
Load current: 95A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Max. load current: 149A
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MCNA95P2200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Max. off-state voltage: 2.2kV
Load current: 95A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.63V
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
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IXYH60N90C3 IXYH60N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB24A40B479820&compId=IXYH60N90C3.pdf?ci_sign=57fc15f8e17396bfde6a9654fad8ffe22b1c18b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 60A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 310A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 268ns
auf Bestellung 337 Stücke:
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6+13.9 EUR
9+8.18 EUR
120+8.11 EUR
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IXTA3N100D2 IXTA3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC857820&compId=IXTA3N100D2HV.pdf?ci_sign=f5984504d3ae9f0565200babfc9d597aed5ffc16 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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IXFT14N80P IXFT14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VUO80-16NO1 VUO80-16NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888049A5497760C4&compId=VUO80-16NO1.pdf?ci_sign=8ee1fc1be7d49b3af7f6deb5f347ea958e0e7cb0 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
2+38.67 EUR
10+37.18 EUR
Mindestbestellmenge: 2
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DMA30E1800HA DMA30E1800HA IXYS DMA30E1800HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Kind of package: tube
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Load current: 30A
Power dissipation: 210W
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: TO247-2
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.06 EUR
21+3.47 EUR
23+3.16 EUR
Mindestbestellmenge: 15
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IXTP140N12T2 IXTP140N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MEO450-12DA MEO450-12DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of semiconductor module: diode
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 1.76V
Load current: 453A
Max. forward impulse current: 4.8kA
Max. off-state voltage: 1.2kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+96.67 EUR
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MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+47.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFP14N60P IXFP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ14N60P IXTQ14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTT30N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC3D89D624D820&compId=IXTH(Q%2CT)30N50L.pdf?ci_sign=148e8656aef61e8e89994d694bfbdce963d3e1bd
IXTT30N50L
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTH30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT30N50P pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB197984EACA143&compId=IXFH30N50P.pdf?ci_sign=786e1a8a67c262fcaf9881e21ab55ef68f11b8d1
IXFT30N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT30N50Q3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB1A7B71C31C143&compId=IXFH30N50Q3.pdf?ci_sign=d9b0ae8aa75dd9749244f6c2fb2f64691c7199e6
IXFT30N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTH30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTQ30N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ30N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDAF0724A63820&compId=IXTH(Q%2CT%2CV)30N50P_S.pdf?ci_sign=b0a2a8b28d29ba2fa3f8f325d68e4d8a519a9217
IXTQ30N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT30N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28667F1F8651820&compId=IXTH(Q%2CT)30N50L2.pdf?ci_sign=f4abf34c80c9751d46cbc3378dba3ec8f6362d00
IXTT30N50L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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LBA716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4F258929B38BF&compId=lba716.pdf?ci_sign=d45d468b46d147689665005b9ee4dfd3cf1d6094
LBA716S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.67 EUR
10+7.19 EUR
11+6.79 EUR
100+6.54 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBA110 description littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0
LBA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
16+4.59 EUR
17+4.33 EUR
25+4.18 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
LBA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4E457848318BF&compId=LBA110.pdf?ci_sign=73689aaabb177f26a2e2e3fb3f14154169b75211
LBA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.34 EUR
16+4.59 EUR
17+4.33 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
LBA127LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31F60C7&compId=LBA127L.pdf?ci_sign=3ac0051c4930f87a115c7deddf17c4b780b22a0d
LBA127LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
LBA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE318C0C7&compId=LBA110L.pdf?ci_sign=184de066e27ca2542f12e744423f8b91c1a51f2f
LBA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
16+4.48 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LBA120LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31C20C7&compId=LBA120L.pdf?ci_sign=2ad62a54a436b546b4f1a8cd730e92b0ce345d8b
LBA120LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.05 EUR
13+5.72 EUR
14+5.41 EUR
100+5.28 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBA120P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31A60C7&compId=LBA120.pdf?ci_sign=f74c6a97813a830075cdce289b3840fcd99fe11c
LBA120P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 20Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.85 EUR
13+5.61 EUR
14+5.31 EUR
100+5.16 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBA127L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31F60C7&compId=LBA127L.pdf?ci_sign=3ac0051c4930f87a115c7deddf17c4b780b22a0d
LBA127L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.81 EUR
12+6.15 EUR
13+5.82 EUR
100+5.68 EUR
Mindestbestellmenge: 7
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LBA127S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31DA0C7&compId=LBA127.pdf?ci_sign=a796dc010099d86c873cf611fca9d02f07d0c904
LBA127S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.74 EUR
12+6.03 EUR
13+5.71 EUR
100+5.49 EUR
Mindestbestellmenge: 11
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LBA716 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
LBA716
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
11+6.79 EUR
Mindestbestellmenge: 10
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LBA127 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE31DA0C7&compId=LBA127.pdf?ci_sign=a796dc010099d86c873cf611fca9d02f07d0c904
LBA127
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Case: DIP8
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.31 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 9
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MDD142-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MDD142-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+61.86 EUR
Mindestbestellmenge: 2
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MEA250-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.54V
Load current: 260A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 2.4kA
Semiconductor structure: common anode
Type of semiconductor module: diode
Electrical mounting: screw
Produkt ist nicht verfügbar
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DMA150YC1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc
DMA150YC1600NA
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
Produkt ist nicht verfügbar
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DMA150YA1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd
DMA150YA1600NA
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
Produkt ist nicht verfügbar
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CPC1966Y pVersion=0046&contRep=ZT&docId=005056AB82531EE98FCB3ADB02BCF8BF&compId=CPC1966.pdf?ci_sign=d8a0ffe0b0c10a0b312f6bc7b4d31fd7f4a4bc52
CPC1966Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.92 EUR
18+4.1 EUR
19+3.88 EUR
Mindestbestellmenge: 11
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DSEI120-12A description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d
DSEI120-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
6+13.01 EUR
10+12.73 EUR
30+12.51 EUR
Mindestbestellmenge: 5
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DSEI120-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a
DSEI120-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO268AAHV
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Power dissipation: 357W
Technology: FRED
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.26 EUR
6+13.08 EUR
30+12.58 EUR
Mindestbestellmenge: 5
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IXTY1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTY1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.65 EUR
30+2.43 EUR
32+2.3 EUR
70+2.22 EUR
Mindestbestellmenge: 25
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IXTP2R4N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d
IXTP2R4N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.84 EUR
14+5.32 EUR
15+5.03 EUR
250+4.83 EUR
Mindestbestellmenge: 10
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IXLF19N250A pVersion=0046&contRep=ZT&docId=005056AB82531EE9888EDA700978B8BF&compId=IXLF19N250A.pdf?ci_sign=d3577cbb7aeaffc10ab0f4cc6751a99274899f60
IXLF19N250A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Technology: NPT
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Produkt ist nicht verfügbar
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IXTK3N250L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2846DD8D0BF1820&compId=IXTK(X)3N250L.pdf?ci_sign=a0fc9370e55c233f3a0b05aae09485494edf2e16
IXTK3N250L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns
Case: TO264
Mounting: THT
Kind of package: tube
Drain current: 3A
Power dissipation: 417W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 230nC
Reverse recovery time: 370ns
On-state resistance: 10Ω
Produkt ist nicht verfügbar
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IXTX3N250L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2846DD8D0BF1820&compId=IXTK(X)3N250L.pdf?ci_sign=a0fc9370e55c233f3a0b05aae09485494edf2e16
IXTX3N250L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain current: 3A
Power dissipation: 417W
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 230nC
Reverse recovery time: 370ns
On-state resistance: 10Ω
Produkt ist nicht verfügbar
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MCC200-14io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA1C22EF4718520D6&compId=MCC200-14io1.pdf?ci_sign=30e8433f322486eb978085c608c43a3034c71d17 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC200-14io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+104.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCC200-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF2578EE46615EA&compId=MCC200-18IO1.pdf?ci_sign=9cebf59deee12ac16ee0b117dec34e4e5e3553ef pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC200-18io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+113.1 EUR
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MCMA110P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MITA300RF1700PTED media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFR44N50Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CAB820&compId=IXFR44N50Q.pdf?ci_sign=99a97c2b9e5d063cf27fe5a4fef4e55efd7f134a
IXFR44N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.19µC
On-state resistance: 0.12Ω
Drain current: 34A
Power dissipation: 313W
Kind of channel: enhancement
Drain-source voltage: 500V
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.06 EUR
30+21.88 EUR
120+21.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFR44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6CC1820&compId=IXFR44N50Q3.pdf?ci_sign=ca7c3ddda1e0d4f113690187365893ed7eb3e98e
IXFR44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 93nC
On-state resistance: 154mΩ
Drain current: 25A
Power dissipation: 300W
Kind of channel: enhancement
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXTQ44N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13E9820&compId=IXTQ44N50P.pdf?ci_sign=5b6b390d0f88dc2b81c15815714aa839131be972
IXTQ44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Case: TO3P
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
Reverse recovery time: 400ns
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 650W
Kind of channel: enhancement
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFH44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c
IXFH44N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Case: TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 93nC
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 830W
Kind of channel: enhancement
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFR44N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C95820&compId=IXFR44N50P.pdf?ci_sign=7af93dd52bee59ebe4814ce2e7c1a8e2f92a4efb
IXFR44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 0.15Ω
Drain current: 24A
Power dissipation: 208W
Kind of channel: enhancement
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFT44N50P pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFT44N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 650W
Kind of channel: enhancement
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IXFT44N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D560EA38423820&compId=IXFH(T)44N50Q3.pdf?ci_sign=8ccaf63b663c6315e8193c688f8a56787789ba3c
IXFT44N50Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 93nC
On-state resistance: 0.14Ω
Drain current: 44A
Power dissipation: 830W
Kind of channel: enhancement
Drain-source voltage: 500V
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IXFN360N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF63E7A0DAD7820&compId=IXFN360N15T2.pdf?ci_sign=4def48316f0abdbe91810c197e50af3682680042
IXFN360N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 310A
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Power dissipation: 1.07kW
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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VGO36-16IO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08
VGO36-16IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 65mA
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.26 EUR
10+20.45 EUR
Mindestbestellmenge: 4
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CPC5620A media?resourcetype=datasheets&itemid=F3DAF718-2656-43F0-8E3D-5A02640F1862&filename=Littelfuse-Integrated-Circuits-CPC5620-21-Datasheet
Hersteller: IXYS
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Case: SO32
Mounting: SMD
Kind of package: tube
Supply voltage: 2.8...5.5V DC
Interface: PLI
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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MCNA95PD2200TB pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 2.2kV
Load current: 95A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Max. load current: 149A
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MCNA95P2200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Max. off-state voltage: 2.2kV
Load current: 95A
Semiconductor structure: double series
Case: TO240AA
Max. forward voltage: 1.63V
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
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IXYH60N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB24A40B479820&compId=IXYH60N90C3.pdf?ci_sign=57fc15f8e17396bfde6a9654fad8ffe22b1c18b7
IXYH60N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 60A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 310A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 268ns
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.9 EUR
9+8.18 EUR
120+8.11 EUR
Mindestbestellmenge: 6
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IXTA3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTA3N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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IXTA3N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC857820&compId=IXTA3N100D2HV.pdf?ci_sign=f5984504d3ae9f0565200babfc9d597aed5ffc16
IXTA3N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
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IXFT14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFT14N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VUO80-16NO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888049A5497760C4&compId=VUO80-16NO1.pdf?ci_sign=8ee1fc1be7d49b3af7f6deb5f347ea958e0e7cb0
VUO80-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 80A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 0.6kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.14V
Leads: connectors
Case: V1-A-Pack
Mechanical mounting: screw
Leads dimensions: 2x0.5mm
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.67 EUR
10+37.18 EUR
Mindestbestellmenge: 2
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DMA30E1800HA DMA30E1800HA.pdf
DMA30E1800HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Kind of package: tube
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Load current: 30A
Power dissipation: 210W
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: TO247-2
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
21+3.47 EUR
23+3.16 EUR
Mindestbestellmenge: 15
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IXTP140N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE4D4C598B820&compId=IXTA(P)140N12T2.pdf?ci_sign=96847b55de5591e2d4cc16630b5a64962539e9ba
IXTP140N12T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MEO450-12DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEO450-12DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of semiconductor module: diode
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 1.76V
Load current: 453A
Max. forward impulse current: 4.8kA
Max. off-state voltage: 1.2kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+96.67 EUR
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MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+47.38 EUR
Mindestbestellmenge: 2
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IXFP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXTQ14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTQ14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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