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IXFH50N30Q3 IXFH50N30Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
auf Bestellung 14 Stücke:
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6+12.96 EUR
10+12.46 EUR
Mindestbestellmenge: 6
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DSB60C30PB DSB60C30PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Power dissipation: 145W
Max. forward impulse current: 530A
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
45+1.6 EUR
51+1.42 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 40
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DPG30P300PJ DPG30P300PJ IXYS media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 450A; ISOPLUS220™
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 30A
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
auf Bestellung 100 Stücke:
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7+10.75 EUR
10+7.29 EUR
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DSB60C45PB DSB60C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Power dissipation: 145W
Max. forward impulse current: 490A
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DSB60C60PB DSB60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Power dissipation: 145W
Max. forward impulse current: 490A
Produkt ist nicht verfügbar
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DPG60C300HJ DPG60C300HJ IXYS Littelfuse-Power-Semiconductors-DPG60C300HJ-Datasheet?assetguid=75018E55-B8E7-4BF6-ACE8-4E6EDD4B5031 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS247™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.26V
Load current: 30A x2
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
Produkt ist nicht verfügbar
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IXFK44N50 IXFK44N50 IXYS pVersion=0046&contRep=ZT&docId=E291FBCEC3F0FDF19A99005056AB752F&compId=93001.pdf?ci_sign=78d733b99a17cf6c7997e90fc07c9bc206d19d8b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 520W; TO264; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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CPC1510GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 15Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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MCD200-16IO1 MCD200-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A018B9F0C0BE27&compId=MCD200-16IO1-DTE.pdf?ci_sign=a7d3e8c4cf9fd900d3d4325b9ea25c10a7b2d2b4 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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Lieferzeit 14-21 Tag (e)
1+96.67 EUR
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MDMA900U1600PTEH IXYS MDMA900U1600PTEH.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 900A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Version: module
Case: E3-Pack
Mechanical mounting: screw
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CPC1560GS CPC1560GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
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CPC1560GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
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DSA20C150PN DSA20C150PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91994C74678BF&compId=DSA20C150PN.pdf?ci_sign=00dda16ec67eb23b64143f0f62215a30665374ae Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.73V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.73V
Max. forward impulse current: 220A
Load current: 10A x2
Max. off-state voltage: 150V
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Produkt ist nicht verfügbar
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IXFN420N10T IXFN420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.99 EUR
10+28.83 EUR
Mindestbestellmenge: 3
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IXFT120N15P IXFT120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.54 EUR
9+8.42 EUR
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IXFT120N25X3HV IXFT120N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.81 EUR
6+12.3 EUR
7+11.63 EUR
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IXXN200N60C3H1 IXXN200N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F323B2A9A45820&compId=IXXN200N60C3H1.pdf?ci_sign=c226e5dec3e51a0405118c87d36ddf9c69c0fdda Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXTK102N65X2 IXTK102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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CPC1130NTR CPC1130NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Power dissipation: 460W
Pulsed collector current: 400A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
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IXYN85N120C4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD09BD40F73777C80E1&compId=IXYN85N120C4H1.pdf?ci_sign=aab417eea0514b6583e79adf046c9f236adf1df5 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
Produkt ist nicht verfügbar
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CLA5E1200PZ-TUB CLA5E1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BBF406A5A0C4&compId=CLA5E1200PZ.pdf?ci_sign=44c33192702f8a7210afc6a9e6ef8b60f9b83fb2 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
22+3.4 EUR
26+2.76 EUR
28+2.62 EUR
Mindestbestellmenge: 20
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DHG10I1200PA DHG10I1200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
auf Bestellung 158 Stücke:
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24+3.09 EUR
41+1.77 EUR
43+1.69 EUR
50+1.62 EUR
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DHG10I1200PM DHG10I1200PM IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3F9058C8CE143&compId=DHG10I1200PM.pdf?ci_sign=620817a1ba2738c57110b9b1eaf322e1df25ea0f Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
auf Bestellung 104 Stücke:
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22+3.27 EUR
38+1.9 EUR
40+1.8 EUR
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CLB30I1200PZ-TUB CLB30I1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BF9A635F80C4&compId=CLB30I1200PZ.pdf?ci_sign=a1f9b4639a575365c028e15a3311ad9611b93dcf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
auf Bestellung 50 Stücke:
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19+3.95 EUR
21+3.55 EUR
26+2.82 EUR
27+2.66 EUR
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DHG20I1200PA DHG20I1200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA458EA2E67E143&compId=DHG20I1200PA.pdf?ci_sign=ef08cbc9c09bd8d954098eca0be066af8cb17d7d Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
auf Bestellung 18 Stücke:
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17+4.42 EUR
18+3.98 EUR
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CLA30E1200PC-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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CLB40I1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5C2D706AE40C4&compId=CLB40I1200PZ.pdf?ci_sign=4c955e440d6a4040b6e0c8bf818da052a9032f9e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
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CLE30E1200PB CLE30E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9951565917E60C7&compId=CLE30E1200PB.pdf?ci_sign=8096ad1f70f141440554072b6ca52c4f2dc2f30e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
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IXA20I1200PB IXA20I1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
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MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: XPT™
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG120W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG180W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
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IXTP08N100P IXTP08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO220AB
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IXFL38N100P IXFL38N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA0D820&compId=IXFL38N100P.pdf?ci_sign=94929944ea010461ba73f32c37d8eedfcfafaddd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.35µC
On-state resistance: 0.23Ω
Drain current: 29A
Power dissipation: 520W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
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IXTA08N100D2HV IXTA08N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7BD820&compId=IXTA08N100D2HV.pdf?ci_sign=3be54c5ad37749ff2e0bd8c4de040e221ab922e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 325nC
On-state resistance: 21Ω
Drain current: 0.8A
Power dissipation: 60W
Drain-source voltage: 1kV
Kind of channel: depletion
Case: TO263HV
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IXFH18N100Q3 IXFH18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO247-3
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IXFN38N100P IXFN38N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7720FEE265820&compId=IXFN38N100P.pdf?ci_sign=8127a5e23ad1ce6b02da77b9e7e36fc590b8522a Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 0.35µC
Reverse recovery time: 300ns
On-state resistance: 0.21Ω
Drain current: 38A
Gate-source voltage: ±40V
Pulsed drain current: 120A
Power dissipation: 1kW
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: SOT227B
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IXFT18N100Q3 IXFT18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO268
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IXTA08N100P IXTA08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO263
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IXTY08N100P IXTY08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO252
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DHG40I4500KO IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™
Mounting: THT
Case: ISOPLUS264™
Type of diode: rectifying
Semiconductor structure: single diode
Technology: Sonic FRD™
Kind of package: tube
Max. forward voltage: 3.5V
Load current: 43A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 4.5kV
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VUO160-16NO7 VUO160-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA839B255FCB2143&compId=VUO160-16NO7.pdf?ci_sign=f259cb944b4e7fd27ca36b116c05da4f56b80b87 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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IXTA36N30P IXTA36N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXTT88N30P IXTT88N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E84BAF03DE27&compId=IXTH88N30P-DTE.pdf?ci_sign=e30dabb5ca243df6b068c69b7e46217ddc0360dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
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MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
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IX4427NTR IX4427NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Supply voltage: 4.5...35V
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MDMA60B800MB IXYS Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Case: ECO-PAC 1
Type of semiconductor module: diode
Electrical mounting: THT
Mechanical mounting: screw
Load current: 60A
Max. off-state voltage: 0.8kV
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DLA100B800LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
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DLA100B800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
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DMA120B800LB-TRR IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
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DMA120B800LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
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IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 IXFN170N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
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IXFH6N120P IXFH6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Drain current: 6A
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
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IXFA6N120P IXFA6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Reverse recovery time: 300ns
On-state resistance: 2.75Ω
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; Polar™
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IXTT1N250HV IXTT1N250HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14B3820&compId=IXTT1N250HV.pdf?ci_sign=35d38b5601b2a04ee4448180fd9ae245a739e2e3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 41nC
Reverse recovery time: 2.5µs
On-state resistance: 40Ω
Drain current: 1.5A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 2.5kV
Power dissipation: 250W
Case: TO268HV
Kind of channel: enhancement
Mounting: SMD
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MUBW50-06A8 IXYS MUBW50-06A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E3-Pack
Technology: NPT
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IXDI604SI IXDI604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFH50N30Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158
IXFH50N30Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.96 EUR
10+12.46 EUR
Mindestbestellmenge: 6
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DSB60C30PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e
DSB60C30PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Power dissipation: 145W
Max. forward impulse current: 530A
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
45+1.6 EUR
51+1.42 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 40
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DPG30P300PJ media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet
DPG30P300PJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 450A; ISOPLUS220™
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 30A
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.75 EUR
10+7.29 EUR
Mindestbestellmenge: 7
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DSB60C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453
DSB60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Power dissipation: 145W
Max. forward impulse current: 490A
Produkt ist nicht verfügbar
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DSB60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2
DSB60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Power dissipation: 145W
Max. forward impulse current: 490A
Produkt ist nicht verfügbar
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DPG60C300HJ Littelfuse-Power-Semiconductors-DPG60C300HJ-Datasheet?assetguid=75018E55-B8E7-4BF6-ACE8-4E6EDD4B5031
DPG60C300HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS247™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.26V
Load current: 30A x2
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
Produkt ist nicht verfügbar
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IXFK44N50 pVersion=0046&contRep=ZT&docId=E291FBCEC3F0FDF19A99005056AB752F&compId=93001.pdf?ci_sign=78d733b99a17cf6c7997e90fc07c9bc206d19d8b
IXFK44N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 520W; TO264; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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CPC1510GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 15Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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MCD200-16IO1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A018B9F0C0BE27&compId=MCD200-16IO1-DTE.pdf?ci_sign=a7d3e8c4cf9fd900d3d4325b9ea25c10a7b2d2b4
MCD200-16IO1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+96.67 EUR
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MDMA900U1600PTEH MDMA900U1600PTEH.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 900A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Version: module
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC1560GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
CPC1560GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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CPC1560GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
Produkt ist nicht verfügbar
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DSA20C150PN pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91994C74678BF&compId=DSA20C150PN.pdf?ci_sign=00dda16ec67eb23b64143f0f62215a30665374ae
DSA20C150PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.73V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.73V
Max. forward impulse current: 220A
Load current: 10A x2
Max. off-state voltage: 150V
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Produkt ist nicht verfügbar
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IXFN420N10T pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3
IXFN420N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.99 EUR
10+28.83 EUR
Mindestbestellmenge: 3
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IXFT120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFT120N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHT™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.54 EUR
9+8.42 EUR
Mindestbestellmenge: 6
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IXFT120N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa
IXFT120N25X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.81 EUR
6+12.3 EUR
7+11.63 EUR
Mindestbestellmenge: 5
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IXXN200N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F323B2A9A45820&compId=IXXN200N60C3H1.pdf?ci_sign=c226e5dec3e51a0405118c87d36ddf9c69c0fdda
IXXN200N60C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
Produkt ist nicht verfügbar
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IXTK102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTK102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
Produkt ist nicht verfügbar
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CPC1130NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e
CPC1130NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXGX55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba
IXGX55N120A3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Power dissipation: 460W
Pulsed collector current: 400A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXYN85N120C4H1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD09BD40F73777C80E1&compId=IXYN85N120C4H1.pdf?ci_sign=aab417eea0514b6583e79adf046c9f236adf1df5
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
Produkt ist nicht verfügbar
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CLA5E1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BBF406A5A0C4&compId=CLA5E1200PZ.pdf?ci_sign=44c33192702f8a7210afc6a9e6ef8b60f9b83fb2
CLA5E1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
22+3.4 EUR
26+2.76 EUR
28+2.62 EUR
Mindestbestellmenge: 20
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DHG10I1200PA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84
DHG10I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
41+1.77 EUR
43+1.69 EUR
50+1.62 EUR
Mindestbestellmenge: 24
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DHG10I1200PM pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3F9058C8CE143&compId=DHG10I1200PM.pdf?ci_sign=620817a1ba2738c57110b9b1eaf322e1df25ea0f
DHG10I1200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
38+1.9 EUR
40+1.8 EUR
Mindestbestellmenge: 22
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CLB30I1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BF9A635F80C4&compId=CLB30I1200PZ.pdf?ci_sign=a1f9b4639a575365c028e15a3311ad9611b93dcf
CLB30I1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
21+3.55 EUR
26+2.82 EUR
27+2.66 EUR
Mindestbestellmenge: 19
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DHG20I1200PA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA458EA2E67E143&compId=DHG20I1200PA.pdf?ci_sign=ef08cbc9c09bd8d954098eca0be066af8cb17d7d
DHG20I1200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.42 EUR
18+3.98 EUR
Mindestbestellmenge: 17
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CLA30E1200PC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Produkt ist nicht verfügbar
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CLB40I1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5C2D706AE40C4&compId=CLB40I1200PZ.pdf?ci_sign=4c955e440d6a4040b6e0c8bf818da052a9032f9e
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
Produkt ist nicht verfügbar
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CLE30E1200PB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9951565917E60C7&compId=CLE30E1200PB.pdf?ci_sign=8096ad1f70f141440554072b6ca52c4f2dc2f30e
CLE30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
Produkt ist nicht verfügbar
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IXA20I1200PB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8
IXA20I1200PB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: XPT™
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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MIXG120W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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MIXG180W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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MIXG490PF1200PTSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
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IXTP08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTP08N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO220AB
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
29+2.5 EUR
39+1.86 EUR
41+1.76 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFL38N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA0D820&compId=IXFL38N100P.pdf?ci_sign=94929944ea010461ba73f32c37d8eedfcfafaddd
IXFL38N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.35µC
On-state resistance: 0.23Ω
Drain current: 29A
Power dissipation: 520W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.42 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTA08N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7BD820&compId=IXTA08N100D2HV.pdf?ci_sign=3be54c5ad37749ff2e0bd8c4de040e221ab922e4
IXTA08N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 325nC
On-state resistance: 21Ω
Drain current: 0.8A
Power dissipation: 60W
Drain-source voltage: 1kV
Kind of channel: depletion
Case: TO263HV
Produkt ist nicht verfügbar
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IXFH18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFH18N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO247-3
Produkt ist nicht verfügbar
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IXFN38N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7720FEE265820&compId=IXFN38N100P.pdf?ci_sign=8127a5e23ad1ce6b02da77b9e7e36fc590b8522a
IXFN38N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 0.35µC
Reverse recovery time: 300ns
On-state resistance: 0.21Ω
Drain current: 38A
Gate-source voltage: ±40V
Pulsed drain current: 120A
Power dissipation: 1kW
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: SOT227B
Produkt ist nicht verfügbar
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IXFT18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFT18N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO268
Produkt ist nicht verfügbar
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IXTA08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTA08N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO263
Produkt ist nicht verfügbar
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IXTY08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTY08N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO252
Produkt ist nicht verfügbar
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DHG40I4500KO
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™
Mounting: THT
Case: ISOPLUS264™
Type of diode: rectifying
Semiconductor structure: single diode
Technology: Sonic FRD™
Kind of package: tube
Max. forward voltage: 3.5V
Load current: 43A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 4.5kV
Produkt ist nicht verfügbar
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VUO160-16NO7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA839B255FCB2143&compId=VUO160-16NO7.pdf?ci_sign=f259cb944b4e7fd27ca36b116c05da4f56b80b87
VUO160-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+81.2 EUR
3+80.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA36N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184
IXTA36N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.88 EUR
18+4 EUR
20+3.65 EUR
Mindestbestellmenge: 13
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IXTT88N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E84BAF03DE27&compId=IXTH88N30P-DTE.pdf?ci_sign=e30dabb5ca243df6b068c69b7e46217ddc0360dc
IXTT88N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
6+12.58 EUR
10+12.1 EUR
Mindestbestellmenge: 5
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MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+47.65 EUR
10+45.87 EUR
20+45.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IX4427NTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Supply voltage: 4.5...35V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
65+1.11 EUR
96+0.75 EUR
102+0.7 EUR
500+0.68 EUR
Mindestbestellmenge: 41
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MDMA60B800MB
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Case: ECO-PAC 1
Type of semiconductor module: diode
Electrical mounting: THT
Mechanical mounting: screw
Load current: 60A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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DLA100B800LB-TRR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
Produkt ist nicht verfügbar
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DLA100B800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
Produkt ist nicht verfügbar
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DMA120B800LB-TRR
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
Produkt ist nicht verfügbar
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DMA120B800LB-TUB
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
Produkt ist nicht verfügbar
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IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN170N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866
IXFN170N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
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IXFH6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFH6N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Drain current: 6A
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
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IXFA6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFA6N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Reverse recovery time: 300ns
On-state resistance: 2.75Ω
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; Polar™
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IXTT1N250HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14B3820&compId=IXTT1N250HV.pdf?ci_sign=35d38b5601b2a04ee4448180fd9ae245a739e2e3
IXTT1N250HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 41nC
Reverse recovery time: 2.5µs
On-state resistance: 40Ω
Drain current: 1.5A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 2.5kV
Power dissipation: 250W
Case: TO268HV
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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MUBW50-06A8 MUBW50-06A8.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E3-Pack
Technology: NPT
Type of semiconductor module: IGBT
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IXDI604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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