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LOC112S LOC112S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 100 Stücke:
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27+2.69 EUR
32+2.26 EUR
33+2.19 EUR
35+2.1 EUR
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IXTH90P10P IXTH90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Power dissipation: 462W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 144ns
Drain-source voltage: -100V
Drain current: -90A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
auf Bestellung 300 Stücke:
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6+14.06 EUR
8+9.09 EUR
120+8.75 EUR
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IXTA60N10T IXTA60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
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IXFK360N10T IXFK360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFN32N120P IXFN32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83FC27C19F820&compId=IXFN32N120P.pdf?ci_sign=21e350967878f792e5cbabfa7c9da6eeff737a7c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
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IXFZ140N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC69D820&compId=IXFZ140N25T.pdf?ci_sign=952f429967276dca1a61b9a4cdcb8892aedde274 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXGH16N170 IXGH16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
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IXGH16N170A IXGH16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXFK420N10T IXFK420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
auf Bestellung 18 Stücke:
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4+18.75 EUR
5+17.73 EUR
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IXFH20N100P IXFH20N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE728CC0A18BF&compId=IXF_20N100P.pdf?ci_sign=e2a539356f4e584bf4dad0014f01227b046bdbad Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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IXFN420N10T IXFN420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
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IXFH320N10T2 IXFH320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8EFE36A0F9820&compId=IXXH30N65C4D1.pdf?ci_sign=550355bb4be0761a37e2b9743713f9f41c109a4e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Pulsed collector current: 136A
Collector current: 30A
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IXXH30N65B4 IXXH30N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8DEB991221820&compId=IXXH30N65B4.pdf?ci_sign=bbf00177ee9f048f5be794de090191d96e7b8592 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Pulsed collector current: 146A
Collector current: 30A
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8E8CB7EEEB820&compId=IXXH30N65B4D1.pdf?ci_sign=c2ff94212e6ba280141b1eba1a8adcae86004281 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Pulsed collector current: 146A
Collector current: 30A
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MDD200-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E12DCDB379DE28&compId=MDD200-22N1-DTE.pdf?ci_sign=2cca8bdbfad489fe0eda61f2b7a2d0ecd141324f pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
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MDD200-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E081E3E28A7E28&compId=MDD200-16N1-DTE.pdf?ci_sign=8dda3721dbf88572c903346fd69369515b29a002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
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MDD200-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8373F35902A0C4&compId=MDD200-18N1.pdf?ci_sign=4e6c82549feffa3540f48d23c8a1f65b2fbd7448 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
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MDD200-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836BB6A54FE0C4&compId=MDD200-14N1.pdf?ci_sign=9c65bcb969b3e3e3a5895718e104f59faa6fc667 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Case: TO268
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1+71.5 EUR
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
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IXTA28P065T IXTA28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 31ns
Drain-source voltage: -65V
Drain current: -28A
On-state resistance: 45mΩ
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 253 Stücke:
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19+3.82 EUR
33+2.19 EUR
35+2.07 EUR
250+2.04 EUR
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IXTN90N25L2 IXTN90N25L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8E2E048735820&compId=IXTN90N25L2.pdf?ci_sign=6a285a5bc74e4e1c8e1650aa50849cbbf7eb30a3 Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Drain current: 90A
On-state resistance: 36mΩ
Power dissipation: 735W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 640nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 360A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Drain-source voltage: 250V
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IXFP90N20X3M IXFP90N20X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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IXTA90N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 124ns
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IXFA12N50P IXFA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 276 Stücke:
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16+4.68 EUR
18+4.2 EUR
22+3.35 EUR
23+3.17 EUR
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IXTP12N50P IXTP12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 298 Stücke:
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19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.6 EUR
250+2.57 EUR
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IXTA12N50P IXTA12N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
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IXTT02N450HV IXTT02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 113W
Case: TO268HV
On-state resistance: 625Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
auf Bestellung 148 Stücke:
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3+28.29 EUR
30+27.2 EUR
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PLA190S PLA190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7100C7&compId=PLA190.pdf?ci_sign=d3dd6a4abd26658046a751f3e84d8c6790306ec1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
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14+5.12 EUR
18+4 EUR
19+3.78 EUR
50+3.76 EUR
250+3.63 EUR
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PLA194S PLA194S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC77E0C7&compId=PLA194.pdf?ci_sign=b5f6d1e3573649bc3630d60c21a8bc071319a1a7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
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18+4.03 EUR
23+3.17 EUR
24+3 EUR
250+2.89 EUR
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PLA193S PLA193S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7600C7&compId=PLA193.pdf?ci_sign=cc6953e4d87acb24a4f5c915359585cfe3a4d641 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 150 Stücke:
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19+3.83 EUR
24+3 EUR
26+2.83 EUR
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PAA190S PAA190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A6E0C7&compId=PAA190.pdf?ci_sign=a4db46c22502d000b84115de436f38721cd16e6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
auf Bestellung 100 Stücke:
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7+11.54 EUR
11+6.56 EUR
12+6.21 EUR
100+6.05 EUR
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IXFK50N85X IXFK50N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
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IXTH06N220P3HV IXTH06N220P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Drain-source voltage: 2.2kV
Drain current: 0.38A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: Polar3™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
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LCC110S LCC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 166 Stücke:
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10+7.89 EUR
17+4.35 EUR
18+4.1 EUR
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LCC110 LCC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 89 Stücke:
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8+9.02 EUR
17+4.32 EUR
18+4.09 EUR
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LCC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
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LCC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Produkt ist nicht verfügbar
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LCC110P LCC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
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IXFH220N06T3 IXFH220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IXFA220N06T3 IXFA220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
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IXTP8N65X2 IXTP8N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFP16N50P IXFP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
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10+7.22 EUR
20+3.58 EUR
22+3.39 EUR
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IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
auf Bestellung 230 Stücke:
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14+5.46 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
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IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 33 Stücke:
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21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 21
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IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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LBA710 LBA710 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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DSI45-16AR DSI45-16AR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD64BBE431F38BF&compId=DSI45-16AR.pdf?ci_sign=a6b51971916c964ec6a2ef98e7e97b945766a51e Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.55 EUR
12+6.13 EUR
13+5.81 EUR
Mindestbestellmenge: 9
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DSI45-08A DSI45-08A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F8C860636CD8BF&compId=DSI45-08A.pdf?ci_sign=35681297a2e2a5e8ed4e64daf69e3f10fde4b7ba Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Max. off-state voltage: 0.8kV
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.76 EUR
19+3.78 EUR
20+3.58 EUR
Mindestbestellmenge: 13
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PLA143S PLA143S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98FE0C7&compId=PLA143.pdf?ci_sign=4904e2f1829b022ee77cbeed6597ee3bd9e190e2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.43 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 17
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LCA120 LCA120 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
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LCA120S LCA120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.09 EUR
25+2.93 EUR
26+2.76 EUR
50+2.75 EUR
Mindestbestellmenge: 24
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LOC112S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
32+2.26 EUR
33+2.19 EUR
35+2.1 EUR
Mindestbestellmenge: 27
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IXTH90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Power dissipation: 462W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 144ns
Drain-source voltage: -100V
Drain current: -90A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.06 EUR
8+9.09 EUR
120+8.75 EUR
Mindestbestellmenge: 6
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IXTA60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTA60N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Produkt ist nicht verfügbar
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IXFK360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFK360N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFN32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83FC27C19F820&compId=IXFN32N120P.pdf?ci_sign=21e350967878f792e5cbabfa7c9da6eeff737a7c
IXFN32N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFZ140N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC69D820&compId=IXFZ140N25T.pdf?ci_sign=952f429967276dca1a61b9a4cdcb8892aedde274
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXGH16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGH16N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGH16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGH16N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFK420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFK420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.75 EUR
5+17.73 EUR
Mindestbestellmenge: 4
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IXFH20N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE728CC0A18BF&compId=IXF_20N100P.pdf?ci_sign=e2a539356f4e584bf4dad0014f01227b046bdbad
IXFH20N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFN420N10T pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3
IXFN420N10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: GigaMOS™; HiPerFET™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXFH320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MMIX1F420N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
Produkt ist nicht verfügbar
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IXXH30N65C4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8EFE36A0F9820&compId=IXXH30N65C4D1.pdf?ci_sign=550355bb4be0761a37e2b9743713f9f41c109a4e
IXXH30N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Pulsed collector current: 136A
Collector current: 30A
Produkt ist nicht verfügbar
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IXXH30N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8DEB991221820&compId=IXXH30N65B4.pdf?ci_sign=bbf00177ee9f048f5be794de090191d96e7b8592
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Pulsed collector current: 146A
Collector current: 30A
Produkt ist nicht verfügbar
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IXXH30N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8E8CB7EEEB820&compId=IXXH30N65B4D1.pdf?ci_sign=c2ff94212e6ba280141b1eba1a8adcae86004281
IXXH30N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Pulsed collector current: 146A
Collector current: 30A
Produkt ist nicht verfügbar
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MDD200-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E12DCDB379DE28&compId=MDD200-22N1-DTE.pdf?ci_sign=2cca8bdbfad489fe0eda61f2b7a2d0ecd141324f pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E081E3E28A7E28&compId=MDD200-16N1-DTE.pdf?ci_sign=8dda3721dbf88572c903346fd69369515b29a002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8373F35902A0C4&compId=MDD200-18N1.pdf?ci_sign=4e6c82549feffa3540f48d23c8a1f65b2fbd7448 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836BB6A54FE0C4&compId=MDD200-14N1.pdf?ci_sign=9c65bcb969b3e3e3a5895718e104f59faa6fc667 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Case: TO268
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXXH80N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341
IXXH80N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Produkt ist nicht verfügbar
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IXXH80N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef
IXXH80N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
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IXTA28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTA28P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 31ns
Drain-source voltage: -65V
Drain current: -28A
On-state resistance: 45mΩ
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.82 EUR
33+2.19 EUR
35+2.07 EUR
250+2.04 EUR
Mindestbestellmenge: 19
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IXTN90N25L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8E2E048735820&compId=IXTN90N25L2.pdf?ci_sign=6a285a5bc74e4e1c8e1650aa50849cbbf7eb30a3
IXTN90N25L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Drain current: 90A
On-state resistance: 36mΩ
Power dissipation: 735W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 640nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 360A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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IXFP90N20X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
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IXTA90N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
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IXFA12N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7AEFCAC3138BF&compId=IXF_12N50P.pdf?ci_sign=3dd36ef8468ec34dac25b7833e04dbc62f9852a3
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
18+4.2 EUR
22+3.35 EUR
23+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXTP12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
21+3.46 EUR
26+2.76 EUR
28+2.6 EUR
250+2.57 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IXTA12N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9064110E047E27&compId=IXTA12N50P-DTE.pdf?ci_sign=283ea5972ce70f5ced4481379f8bf7204f8751a8
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 12A
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Gate charge: 29nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1
IXTT02N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 113W
Case: TO268HV
On-state resistance: 625Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.29 EUR
30+27.2 EUR
Mindestbestellmenge: 3
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PLA190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7100C7&compId=PLA190.pdf?ci_sign=d3dd6a4abd26658046a751f3e84d8c6790306ec1
PLA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
18+4 EUR
19+3.78 EUR
50+3.76 EUR
250+3.63 EUR
Mindestbestellmenge: 14
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PLA194S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC77E0C7&compId=PLA194.pdf?ci_sign=b5f6d1e3573649bc3630d60c21a8bc071319a1a7
PLA194S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 130mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 2ms
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
23+3.17 EUR
24+3 EUR
250+2.89 EUR
Mindestbestellmenge: 18
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PLA193S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7600C7&compId=PLA193.pdf?ci_sign=cc6953e4d87acb24a4f5c915359585cfe3a4d641
PLA193S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PAA190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C26A6E0C7&compId=PAA190.pdf?ci_sign=a4db46c22502d000b84115de436f38721cd16e6b
PAA190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.54 EUR
11+6.56 EUR
12+6.21 EUR
100+6.05 EUR
Mindestbestellmenge: 7
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IXFK50N85X pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFK50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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IXTH06N220P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8
IXTH06N220P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Drain-source voltage: 2.2kV
Drain current: 0.38A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 10.4nC
Technology: Polar3™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
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LCC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
17+4.35 EUR
18+4.1 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCC110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.02 EUR
17+4.32 EUR
18+4.09 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LCC110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 35Ω
Turn-on time: 4ms
Turn-off time: 4ms
Body dimensions: 9.65x6.35x3.3mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LCC110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFH220N06T3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFA220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFA220N06T3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA53B40A6BF8BF&compId=IXT_8N65X2.pdf?ci_sign=d8fe73a78fa1d8d397b55fa5baf0e28457656378
IXTP8N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
20+3.58 EUR
22+3.39 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.46 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
24+3.1 EUR
30+2.4 EUR
32+2.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LBA710 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE320E0C7&compId=LBA710.pdf?ci_sign=b2bcf3bea0ade2d924338f229a01b2c3b3a17049
LBA710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSI45-16AR pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD64BBE431F38BF&compId=DSI45-16AR.pdf?ci_sign=a6b51971916c964ec6a2ef98e7e97b945766a51e
DSI45-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
12+6.13 EUR
13+5.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DSI45-08A pVersion=0046&contRep=ZT&docId=005056AB82531EE987F8C860636CD8BF&compId=DSI45-08A.pdf?ci_sign=35681297a2e2a5e8ed4e64daf69e3f10fde4b7ba
DSI45-08A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Max. off-state voltage: 0.8kV
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.76 EUR
19+3.78 EUR
20+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PLA143S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98FE0C7&compId=PLA143.pdf?ci_sign=4904e2f1829b022ee77cbeed6597ee3bd9e190e2
PLA143S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Operating temperature: -40...85°C
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
Case: DIP6
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
LCA120 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05
LCA120
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LCA120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FA1940C7&compId=LCA120.pdf?ci_sign=c02f4fd184a2ca7999d27c10012f4019208f7a05
LCA120S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
25+2.93 EUR
26+2.76 EUR
50+2.75 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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