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MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Mounting: SMD
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: SMPD
Produkt ist nicht verfügbar
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IXBH12N300 IXBH12N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Power dissipation: 160W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXFH180N20X3 IXFH180N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9B97FB5BF8BF&compId=IXF_180N20X3_HV.pdf?ci_sign=4ec3cef28c972acaa6fe64b5c7693252f804b337 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Mounting: THT
Reverse recovery time: 94ns
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
auf Bestellung 18 Stücke:
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4+19.23 EUR
5+14.7 EUR
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
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LDA100STR LDA100STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
auf Bestellung 720 Stücke:
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73+0.99 EUR
86+0.83 EUR
138+0.52 EUR
145+0.49 EUR
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LDA100 LDA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Kind of output: transistor
Case: DIP6
auf Bestellung 37 Stücke:
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LDA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
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IXFT140N20X3HV IXFT140N20X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Polarisation: unipolar
Case: TO268
Drain current: 140A
Kind of package: tube
Drain-source voltage: 200V
Gate charge: 127nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Type of transistor: N-MOSFET
Power dissipation: 520W
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IXTQ76N25T IXTQ76N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Case: TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 460W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 92nC
Kind of channel: enhancement
Reverse recovery time: 148ns
Drain-source voltage: 250V
Drain current: 76A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 224 Stücke:
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10+7.84 EUR
14+5.15 EUR
120+4.96 EUR
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CS30-12IO1 CS30-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 271 Stücke:
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9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
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IXFN140N20P IXFN140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFR140N20P IXFR140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFK140N20P IXFK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXFH140N20X3 IXFH140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 83 Stücke:
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5+16.34 EUR
6+12.3 EUR
7+11.63 EUR
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IXTK22N100L IXTK22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXFZ520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6B5820&compId=IXFZ520N075T2.pdf?ci_sign=26fb6a6e5211b58faa65984db5ccbca3e0448fe4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 560A
Power dissipation: 215W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 2 Stücke:
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2+35.75 EUR
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DPG60C200HB DPG60C200HB IXYS Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 274 Stücke:
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10+7.28 EUR
11+6.55 EUR
14+5.21 EUR
15+4.92 EUR
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DPG60C200QB DPG60C200QB IXYS Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Case: TO3P
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
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14+5.15 EUR
24+3.09 EUR
25+2.92 EUR
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DPG30C200PB DPG30C200PB IXYS media?resourcetype=datasheets&itemid=414E16FE-8690-49CD-8C7F-B7A69B76A7C3&filename=Littelfuse-Power-Semiconductors-DPG30C200PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 74 Stücke:
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38+1.92 EUR
42+1.73 EUR
47+1.53 EUR
49+1.47 EUR
52+1.4 EUR
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 560A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 38 Stücke:
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17+4.32 EUR
19+3.89 EUR
20+3.6 EUR
21+3.45 EUR
22+3.4 EUR
30+3.27 EUR
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DPG30C200HB DPG30C200HB IXYS media?resourcetype=datasheets&itemid=C7522524-F8A5-4F62-BC19-FCC564D51D7C&filename=Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 24 Stücke:
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24+2.97 EUR
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DPF60C200HB DPF60C200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTP32P05T IXTP32P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Case: TO220AB
Reverse recovery time: 26ns
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 14 Stücke:
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14+5.11 EUR
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IXTP32P20T IXTP32P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 300 Stücke:
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7+10.45 EUR
10+7.31 EUR
50+7.28 EUR
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LF2388BTR LF2388BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Supply voltage: 10...20V
Mounting: SMD
Case: SO20
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -750...420mA
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
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IXTH10P50P IXTH10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Reverse recovery time: 414ns
Drain-source voltage: -500V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 290 Stücke:
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10+7.34 EUR
11+6.94 EUR
270+6.68 EUR
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VUO160-12NO7 VUO160-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8DFE8BA867D00C1&compId=VUO160-12NO7.pdf?ci_sign=136f747c61c846a4a04c699a7ef63ecfe8b877e7 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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VBO160-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FE6EAF9559E0C4&compId=VBO160-12NO7.pdf?ci_sign=8e8a21a127e0cde42148fe3b754eaf87ebd9d0cd Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTH6N50D2 IXTH6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 219 Stücke:
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IXTP6N50D2 IXTP6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
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12+6.31 EUR
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IXTA08N100D2 IXTA08N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 300 Stücke:
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31+2.33 EUR
33+2.2 EUR
100+2.12 EUR
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CPC3980ZTR CPC3980ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 800 Stücke:
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42+1.72 EUR
66+1.09 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 42
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CPC3708CTR CPC3708CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 3215 Stücke:
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99+0.73 EUR
113+0.63 EUR
141+0.51 EUR
149+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 99
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CPC3960ZTR CPC3960ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 939 Stücke:
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100+0.72 EUR
114+0.63 EUR
130+0.55 EUR
137+0.52 EUR
250+0.5 EUR
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CPC3708ZTR CPC3708ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 895 Stücke:
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122+0.59 EUR
237+0.3 EUR
250+0.29 EUR
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CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
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23+3.1 EUR
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CS19-12HO1 CS19-12HO1 IXYS pVersion=0046&contRep=ZT&docId=E1C0492FBC2D22F1A6F5005056AB5A8F&compId=CS19-12HO1.pdf?ci_sign=0986ae30640165de584e652ab971469e43ceef0c description Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
auf Bestellung 331 Stücke:
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20+3.63 EUR
23+3.15 EUR
32+2.25 EUR
34+2.13 EUR
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06F8B3A4538BF&compId=CLA5E1200UC.pdf?ci_sign=7886f252147582f7a20d6fad18da76decb7917c7 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 2240 Stücke:
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29+2.55 EUR
36+2 EUR
38+1.89 EUR
500+1.82 EUR
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CS22-12IO1M CS22-12IO1M IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
auf Bestellung 536 Stücke:
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33+2.2 EUR
35+2.09 EUR
100+2 EUR
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CLA30E1200PB CLA30E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEFEC36F01A38BF&compId=CLA30E1200PB.pdf?ci_sign=d383d2f8fbaa84679fa1f0485503906033c4eae7 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220AB
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 37 Stücke:
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14+5.25 EUR
17+4.23 EUR
25+2.86 EUR
27+2.7 EUR
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CLA30E1200HB CLA30E1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAC10EF225820&compId=CLA30E1200HB.pdf?ci_sign=5ea43205d611045b998b73b0dfda412ae9b80fe1 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
auf Bestellung 254 Stücke:
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12+6.06 EUR
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20+3.58 EUR
22+3.39 EUR
120+3.26 EUR
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CLB30I1200HB CLB30I1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA99503929868C0C7&compId=CLB30I1200HB.pdf?ci_sign=8a8f23f9a1e451bf2ad1b577852e6e86186a436d Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
auf Bestellung 42 Stücke:
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15+5.05 EUR
16+4.48 EUR
18+4.02 EUR
19+3.82 EUR
30+3.75 EUR
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CLA16E1200PN CLA16E1200PN IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3C75C4A8580D2&compId=CLA16E1200PN.pdf?ci_sign=8a652795e55291d724389f9222e6367e0e1a96fa Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Kind of package: tube
Case: TO220FP
Max. off-state voltage: 1.2kV
Max. load current: 16A
Load current: 10A
Gate current: 50mA
Max. forward impulse current: 195A
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 114 Stücke:
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17+4.25 EUR
34+2.14 EUR
36+2.03 EUR
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CLF20E1200PB CLF20E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9952EC35D40C0C7&compId=CLF20E1200PB.pdf?ci_sign=259617a1c258254612c9ab39e81daa6420058592 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Mounting: THT
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 55mA
Produkt ist nicht verfügbar
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CS20-12IO1 CS20-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1B88BBD0CDE27&compId=CS20-12IO1-DTE.pdf?ci_sign=fcbd17d89975b06ad5699722969e844947c99a4f Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO247AD
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
15+4.83 EUR
16+4.7 EUR
17+4.45 EUR
30+4.28 EUR
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CLA40E1200HR CLA40E1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55076DADEE0C4&compId=CLA40E1200HR.pdf?ci_sign=81b17d8fccd5f58e2866df768188a420f4102207 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 40A
Case: ISO247™
Mounting: THT
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 40 Stücke:
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6+13.03 EUR
8+9.05 EUR
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IXDN602SI IXDN602SI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIATR IXDN602SIATR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SITR IXYS littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
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DSS2X121-0045B DSS2X121-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449 description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 30 Stücke:
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2+36.48 EUR
3+34.49 EUR
Mindestbestellmenge: 2
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DSS2X61-01A DSS2X61-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8897037D39F8BF&compId=DSS2x61-01A.pdf?ci_sign=d7bc405acf599eaa1de29a01d2991a0fc877f552 Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 100V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 0.74V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.19 EUR
Mindestbestellmenge: 3
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DSS2X160-0045A DSS2X160-0045A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF43F743B7D8BF&compId=DSS2X160-0045A.pdf?ci_sign=92b3ab83fe019766d36d51bb52be21badd45e381 Category: Diode modules
Description: Module: diode; double; 45V; If: 160Ax2; SOT227B; Ufmax: 0.73V; screw
Case: SOT227B
Max. off-state voltage: 45V
Max. forward voltage: 0.73V
Load current: 160A x2
Semiconductor structure: double
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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LAA100P LAA100P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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LDA102S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB0BE0ABDC1EC&compId=LDA102.pdf?ci_sign=e209e23a920edbbe96409710a7313a9fe8672080 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Produkt ist nicht verfügbar
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IXTX60N50L2 IXTX60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 500V
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Reverse recovery time: 980ns
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VHFD37-08IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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MKE38RK600DFELB MKE38RK600DFELB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Mounting: SMD
Drain current: 50A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 50ns
Semiconductor structure: diode/transistor
Polarisation: unipolar
Gate charge: 0.19µC
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: SMPD
Produkt ist nicht verfügbar
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IXBH12N300 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602
IXBH12N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Power dissipation: 160W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXFH180N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9B97FB5BF8BF&compId=IXF_180N20X3_HV.pdf?ci_sign=4ec3cef28c972acaa6fe64b5c7693252f804b337 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH180N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Mounting: THT
Reverse recovery time: 94ns
Drain-source voltage: 200V
Drain current: 180A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 154nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.23 EUR
5+14.7 EUR
Mindestbestellmenge: 4
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IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
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LDA100STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed
LDA100STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
86+0.83 EUR
138+0.52 EUR
145+0.49 EUR
Mindestbestellmenge: 73
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LDA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed
LDA100
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Kind of output: transistor
Case: DIP6
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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LDA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDA918501264977E0C4&compId=LDA100.pdf?ci_sign=0df13f6bb6df9ec51f42cec731e0e06baae7cfed
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Produkt ist nicht verfügbar
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IXFT140N20X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Mounting: SMD
Polarisation: unipolar
Case: TO268
Drain current: 140A
Kind of package: tube
Drain-source voltage: 200V
Gate charge: 127nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Type of transistor: N-MOSFET
Power dissipation: 520W
Produkt ist nicht verfügbar
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IXTQ76N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e
IXTQ76N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Case: TO3P
Mounting: THT
Kind of package: tube
Power dissipation: 460W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 92nC
Kind of channel: enhancement
Reverse recovery time: 148ns
Drain-source voltage: 250V
Drain current: 76A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.84 EUR
14+5.15 EUR
120+4.96 EUR
Mindestbestellmenge: 10
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CS30-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c
CS30-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 55mA
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
15+5 EUR
16+4.73 EUR
30+4.7 EUR
Mindestbestellmenge: 9
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IXFN140N20P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFR140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK140N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.34 EUR
6+12.3 EUR
7+11.63 EUR
Mindestbestellmenge: 5
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IXTK22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTK22N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFZ520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC6B5820&compId=IXFZ520N075T2.pdf?ci_sign=26fb6a6e5211b58faa65984db5ccbca3e0448fe4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 55ns
Max. forward impulse current: 560A
Power dissipation: 215W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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DPG60C200HB Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8
DPG60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
14+5.21 EUR
15+4.92 EUR
Mindestbestellmenge: 10
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DPG60C200QB Littelfuse-Power-Semiconductors-DPG60C200QB-Datasheet?assetguid=1B2C1EA9-F199-4CC1-83AF-AEB704688BF1
DPG60C200QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Case: TO3P
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 14
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DPG30C200PB media?resourcetype=datasheets&itemid=414E16FE-8690-49CD-8C7F-B7A69B76A7C3&filename=Littelfuse-Power-Semiconductors-DPG30C200PB-Datasheet
DPG30C200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
42+1.73 EUR
47+1.53 EUR
49+1.47 EUR
52+1.4 EUR
Mindestbestellmenge: 38
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 560A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
19+3.89 EUR
20+3.6 EUR
21+3.45 EUR
22+3.4 EUR
30+3.27 EUR
Mindestbestellmenge: 17
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DPG30C200HB media?resourcetype=datasheets&itemid=C7522524-F8A5-4F62-BC19-FCC564D51D7C&filename=Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet
DPG30C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 1.25V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
24+2.97 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DPF60C200HB
DPF60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Case: TO247-3
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.4kA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0CA1113E4F8BF&compId=IXT_32P05T.pdf?ci_sign=db5aa0628442a2ab696c43214df8755287bd452e
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Case: TO220AB
Reverse recovery time: 26ns
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Kind of package: tube
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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IXTP32P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EF0A8A8C018BF&compId=IXT_32P20T.pdf?ci_sign=6bc8fc2e384d370d1b27158e2571e9d58c0bf6c0
IXTP32P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.45 EUR
10+7.31 EUR
50+7.28 EUR
Mindestbestellmenge: 7
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LF2388BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27C32DDFA40CE&compId=LF2388BTR.pdf?ci_sign=0ffe7b00e916e274b61faec0bc85889558573824
LF2388BTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Supply voltage: 10...20V
Mounting: SMD
Case: SO20
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -750...420mA
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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IXTH10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTH10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Reverse recovery time: 414ns
Drain-source voltage: -500V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.55 EUR
10+7.34 EUR
11+6.94 EUR
270+6.68 EUR
Mindestbestellmenge: 8
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VUO160-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8DFE8BA867D00C1&compId=VUO160-12NO7.pdf?ci_sign=136f747c61c846a4a04c699a7ef63ecfe8b877e7
VUO160-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+72.32 EUR
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VBO160-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FE6EAF9559E0C4&compId=VBO160-12NO7.pdf?ci_sign=8e8a21a127e0cde42148fe3b754eaf87ebd9d0cd
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTH6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
11+6.84 EUR
12+6.46 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTP6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTP6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.62 EUR
12+6.31 EUR
13+5.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTA08N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D5010345B820&compId=IXTA(P%2CY)08N100D2.pdf?ci_sign=ff8d8aff111d8414478644545169c45d10c4ed47
IXTA08N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depletion
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
31+2.33 EUR
33+2.2 EUR
100+2.12 EUR
Mindestbestellmenge: 16
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CPC3980ZTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c
CPC3980ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
66+1.09 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 42
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CPC3708CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 3215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
113+0.63 EUR
141+0.51 EUR
149+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 99
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CPC3960ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f
CPC3960ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
114+0.63 EUR
130+0.55 EUR
137+0.52 EUR
250+0.5 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
CPC3708ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
122+0.59 EUR
237+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 82
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CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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CS19-12HO1 description pVersion=0046&contRep=ZT&docId=E1C0492FBC2D22F1A6F5005056AB5A8F&compId=CS19-12HO1.pdf?ci_sign=0986ae30640165de584e652ab971469e43ceef0c
CS19-12HO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
23+3.15 EUR
32+2.25 EUR
34+2.13 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
CLA5E1200UC-TRL pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06F8B3A4538BF&compId=CLA5E1200UC.pdf?ci_sign=7886f252147582f7a20d6fad18da76decb7917c7
CLA5E1200UC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
36+2 EUR
38+1.89 EUR
500+1.82 EUR
Mindestbestellmenge: 29
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CS22-12IO1M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a
CS22-12IO1M
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
33+2.2 EUR
35+2.09 EUR
100+2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
CLA30E1200PB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEFEC36F01A38BF&compId=CLA30E1200PB.pdf?ci_sign=d383d2f8fbaa84679fa1f0485503906033c4eae7
CLA30E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220AB
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
17+4.23 EUR
25+2.86 EUR
27+2.7 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
CLA30E1200HB pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFAC10EF225820&compId=CLA30E1200HB.pdf?ci_sign=5ea43205d611045b998b73b0dfda412ae9b80fe1
CLA30E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.3kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
14+5.49 EUR
20+3.58 EUR
22+3.39 EUR
120+3.26 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CLB30I1200HB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA99503929868C0C7&compId=CLB30I1200HB.pdf?ci_sign=8a8f23f9a1e451bf2ad1b577852e6e86186a436d
CLB30I1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.05 EUR
16+4.48 EUR
18+4.02 EUR
19+3.82 EUR
30+3.75 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CLA16E1200PN pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3C75C4A8580D2&compId=CLA16E1200PN.pdf?ci_sign=8a652795e55291d724389f9222e6367e0e1a96fa
CLA16E1200PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Kind of package: tube
Case: TO220FP
Max. off-state voltage: 1.2kV
Max. load current: 16A
Load current: 10A
Gate current: 50mA
Max. forward impulse current: 195A
Type of thyristor: thyristor
Mounting: THT
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
CLF20E1200PB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9952EC35D40C0C7&compId=CLF20E1200PB.pdf?ci_sign=259617a1c258254612c9ab39e81daa6420058592
CLF20E1200PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Mounting: THT
Max. forward impulse current: 175A
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 55mA
Produkt ist nicht verfügbar
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CS20-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1B88BBD0CDE27&compId=CS20-12IO1-DTE.pdf?ci_sign=fcbd17d89975b06ad5699722969e844947c99a4f
CS20-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO247AD
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
15+4.83 EUR
16+4.7 EUR
17+4.45 EUR
30+4.28 EUR
Mindestbestellmenge: 14
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CLA40E1200HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55076DADEE0C4&compId=CLA40E1200HR.pdf?ci_sign=81b17d8fccd5f58e2866df768188a420f4102207
CLA40E1200HR
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Max. off-state voltage: 1.2kV
Load current: 40A
Case: ISO247™
Mounting: THT
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.03 EUR
8+9.05 EUR
Mindestbestellmenge: 6
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IXDN602SI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SIATR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
IXDN602SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN602SITR littelfuse-integrated-circuits-ixd-602-datasheet?assetguid=75d5db43-b768-4a16-b76f-c3313dc04096
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
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IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
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DSS2X121-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449
DSS2X121-0045B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.48 EUR
3+34.49 EUR
Mindestbestellmenge: 2
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DSS2X61-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8897037D39F8BF&compId=DSS2x61-01A.pdf?ci_sign=d7bc405acf599eaa1de29a01d2991a0fc877f552
DSS2X61-01A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 100V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 0.74V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.19 EUR
Mindestbestellmenge: 3
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DSS2X160-0045A pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF43F743B7D8BF&compId=DSS2X160-0045A.pdf?ci_sign=92b3ab83fe019766d36d51bb52be21badd45e381
DSS2X160-0045A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double; 45V; If: 160Ax2; SOT227B; Ufmax: 0.73V; screw
Case: SOT227B
Max. off-state voltage: 45V
Max. forward voltage: 0.73V
Load current: 160A x2
Semiconductor structure: double
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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LAA100P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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LDA102S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB0BE0ABDC1EC&compId=LDA102.pdf?ci_sign=e209e23a920edbbe96409710a7313a9fe8672080
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Produkt ist nicht verfügbar
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IXTX60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9
IXTX60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 500V
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Reverse recovery time: 980ns
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VHFD37-08IO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
Produkt ist nicht verfügbar
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