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IXFX64N50Q3 IXFX64N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D467BA74859820&compId=IXFK(X)64N50Q3.pdf?ci_sign=d06f282fe71544fead79cd47b45b6394a781ba37 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFX74N50P2 IXFX74N50P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4250D9D5B1820&compId=IXFK(X)74N50P2.pdf?ci_sign=900545cffbacfdb90d0d3fdca2cb8f8db5ca12ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
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DMA30E1800HA DMA30E1800HA IXYS DMA30E1800HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
auf Bestellung 60 Stücke:
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14+5.43 EUR
21+3.47 EUR
22+3.29 EUR
30+3.20 EUR
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IXTA80N10T IXTA80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTP180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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IXTA8N50P IXTA8N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906108C4F8DE27&compId=IXTA8N50P-DTE.pdf?ci_sign=03a321b6c87a5e9fe9d30b74914618328a684eab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
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MCMA700P1600CA IXYS Littelfuse-Power-Semiconductors-MCMA700P1600CA-Datasheet?assetguid=57518344-5E3E-45C3-87E9-9D9F6D24E9A7 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: ComPack
Kind of package: bulk
Type of semiconductor module: thyristor
Load current: 700A
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.41V
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CPC1966B CPC1966B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Turn-on time: 20µs
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
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CPC1966BX8 CPC1966BX8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD820C0C7&compId=CPC1966BX8.pdf?ci_sign=b164c11ac7ea78255fd5e84454b60119b77c10d9 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
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IXFP72N30X3M IXFP72N30X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBBF356252B8BF&compId=IXFP72N30X3M.pdf?ci_sign=c24ed5271396762b17975958867f6946686bb2aa pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
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DSA15IM200UC DSA15IM200UC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 2192 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
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CPC3710CTR CPC3710CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.22A
On-state resistance: 10Ω
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
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IXGH50N90B2D1 IXGH50N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: GenX3™; HiPerFAST™; PT
auf Bestellung 267 Stücke:
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8+9.14 EUR
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IXGH50N90B2 IXGH50N90B2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
auf Bestellung 170 Stücke:
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7+10.87 EUR
10+7.36 EUR
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IXGK50N120C3H1 IXGK50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
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IXGX50N120C3H1 IXGX50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
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IXGH50N120C3 IXGH50N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
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IXGH2N250 IXGH2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
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IXGH25N250 IXGH25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
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IXGK75N250 IXGK75N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB03F9BBFA01820&compId=IXGK75N250.pdf?ci_sign=be8461cff61548ebe11396ab45f12949d639eeef Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
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MWI75-06A7T IXYS Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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DPG20C400PB DPG20C400PB IXYS media?resourcetype=datasheets&itemid=D7658169-4094-4E23-BDBE-9048A8ED197E&filename=Littelfuse-Power-Semiconductors-DPG20C400PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
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29+2.49 EUR
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DPG20C300PN DPG20C300PN IXYS Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
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36+2.02 EUR
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45+1.60 EUR
48+1.52 EUR
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DPG20C200PN DPG20C200PN IXYS media?resourcetype=datasheets&itemid=DEA3C694-23C5-493C-A991-2548CAD0213C&filename=Littelfuse-Power-Semiconductors-DPG20C200PN-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
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36+2.02 EUR
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DPG20C400PN DPG20C400PN IXYS media?resourcetype=datasheets&itemid=E87CB565-0DFF-4A58-A4AE-7E164796DE68&filename=Littelfuse-Power-Semiconductors-DPG20C400PN-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 153 Stücke:
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24+3.07 EUR
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DPG20C200PB DPG20C200PB IXYS media?resourcetype=datasheets&itemid=F8BB398C-2D66-4BCB-B5A5-53172AE4D823&filename=Littelfuse-Power-Semiconductors-DPG20C200PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AB
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
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23+3.20 EUR
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DPG20C300PB DPG20C300PB IXYS DPG20C300PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 137 Stücke:
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36+2.00 EUR
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DPG20C400PC-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3F8C2994420C4&compId=DPG20C400PC.pdf?ci_sign=ae12975f35f22d2ea8356a4e6286bba1a04794bc Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
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DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
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DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
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DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
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DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP-2
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 56 Stücke:
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DPG10I400PA DPG10I400PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
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DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
auf Bestellung 22 Stücke:
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11+6.66 EUR
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IXFR200N10P IXFR200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
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IXDN602PI IXDN602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDN602SIA IXDN602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Case: SO8
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Mounting: SMD
Turn-on time: 93ns
Turn-off time: 93ns
Type of integrated circuit: driver
auf Bestellung 710 Stücke:
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74+0.97 EUR
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DSA1-16D DSA1-16D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 324 Stücke:
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MCC26-12io1B MCC26-12io1B IXYS pVersion=0046&contRep=ZT&docId=E29206B5694F53F19A99005056AB752F&compId=L073.pdf?ci_sign=00049e309488e06fa0b04fd0c328b67947769dea pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
auf Bestellung 52 Stücke:
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MCC26-12io8B MCC26-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
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MCC26-14io1B
+1
 		MCC26-14io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
auf Bestellung 34 Stücke:
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MCC26-16io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
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MCC26-08io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
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MCC26-08io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCC26-14io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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DSSK48-003BS DSSK48-003BS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB9B9FB2F898BF&compId=DSSK48-003BS.pdf?ci_sign=39cde3eceec47b3ed55488881079c2561cf5f1e3 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
auf Bestellung 560 Stücke:
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55+1.30 EUR
57+1.26 EUR
61+1.19 EUR
64+1.13 EUR
250+1.10 EUR
500+1.07 EUR
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IX9907N IX9907N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 498 Stücke:
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IX9908N IX9908N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 287 Stücke:
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97+0.74 EUR
109+0.66 EUR
125+0.57 EUR
132+0.54 EUR
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IXGH32N170A IXGH32N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFH54N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
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CPC1965Y CPC1965Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: SIP4
auf Bestellung 246 Stücke:
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8+9.05 EUR
18+4.19 EUR
19+3.96 EUR
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CPC1965G CPC1965G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP4
Body dimensions: 19.2x7.62x3.3mm
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Operating temperature: -40...85°C
auf Bestellung 175 Stücke:
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18+4.05 EUR
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FMM75-01F FMM75-01F IXYS FMM75-01F.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
auf Bestellung 25 Stücke:
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4+20.72 EUR
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MDNA660U2200PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VGB0124AY7A VGB0124AY7A IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA996B22C9C8960C7&compId=VGB%2C%20F.pdf?ci_sign=950fe8d4ce9285f8e3019d516bbc23c267185ed8 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
1+123.04 EUR
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IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
30+2.43 EUR
31+2.33 EUR
50+2.26 EUR
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IXFA26N30X3 IXFA26N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBAA25B128D8BF&compId=IXF_26N30X3.pdf?ci_sign=7542ebe8db09680e18acec1f007a854c704096f0 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Produkt ist nicht verfügbar
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MEK300-06DA MEK300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
1+87.00 EUR
6+86.41 EUR
12+83.90 EUR
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MCB40P1200LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXFX64N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D467BA74859820&compId=IXFK(X)64N50Q3.pdf?ci_sign=d06f282fe71544fead79cd47b45b6394a781ba37
IXFX64N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX74N50P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4250D9D5B1820&compId=IXFK(X)74N50P2.pdf?ci_sign=900545cffbacfdb90d0d3fdca2cb8f8db5ca12ac
IXFX74N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMA30E1800HA DMA30E1800HA.pdf
DMA30E1800HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.43 EUR
21+3.47 EUR
22+3.29 EUR
30+3.20 EUR
Mindestbestellmenge: 14
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IXTA80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTP180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTA8N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906108C4F8DE27&compId=IXTA8N50P-DTE.pdf?ci_sign=03a321b6c87a5e9fe9d30b74914618328a684eab
IXTA8N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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MCMA700P1600CA Littelfuse-Power-Semiconductors-MCMA700P1600CA-Datasheet?assetguid=57518344-5E3E-45C3-87E9-9D9F6D24E9A7
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: ComPack
Kind of package: bulk
Type of semiconductor module: thyristor
Load current: 700A
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.41V
Produkt ist nicht verfügbar
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CPC1966B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85
CPC1966B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Turn-on time: 20µs
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1966BX8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD820C0C7&compId=CPC1966BX8.pdf?ci_sign=b164c11ac7ea78255fd5e84454b60119b77c10d9
CPC1966BX8
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFP72N30X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBBF356252B8BF&compId=IXFP72N30X3M.pdf?ci_sign=c24ed5271396762b17975958867f6946686bb2aa pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFP72N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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DSA15IM200UC pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8FD8A880F38BF&compId=DSA15IM200UC.pdf?ci_sign=056317a4f5de6751e61974d806a68417d45989a7
DSA15IM200UC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 2192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
47+1.54 EUR
59+1.23 EUR
62+1.16 EUR
500+1.14 EUR
Mindestbestellmenge: 36
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CPC3710CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee
CPC3710CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.22A
On-state resistance: 10Ω
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
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IXGH50N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf
IXGH50N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: GenX3™; HiPerFAST™; PT
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.48 EUR
8+9.14 EUR
Mindestbestellmenge: 6
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IXGH50N90B2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488
IXGH50N90B2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.87 EUR
10+7.36 EUR
Mindestbestellmenge: 7
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IXGK50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893
IXGK50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGX50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893
IXGX50N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGH50N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6
IXGH50N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXGH2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d
IXGH2N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
Produkt ist nicht verfügbar
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IXGH25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0
IXGH25N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
Produkt ist nicht verfügbar
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IXGK75N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB03F9BBFA01820&compId=IXGK75N250.pdf?ci_sign=be8461cff61548ebe11396ab45f12949d639eeef
IXGK75N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Produkt ist nicht verfügbar
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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DPG20C400PB media?resourcetype=datasheets&itemid=D7658169-4094-4E23-BDBE-9048A8ED197E&filename=Littelfuse-Power-Semiconductors-DPG20C400PB-Datasheet
DPG20C400PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
29+2.49 EUR
31+2.36 EUR
Mindestbestellmenge: 21
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DPG20C300PN Littelfuse-Power-Semiconductors-DPG20C300PN-Datasheet?assetguid=81A91808-9E32-4874-B0CD-3B7F01F1EA7E
DPG20C300PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
36+2.02 EUR
41+1.77 EUR
45+1.60 EUR
48+1.52 EUR
250+1.49 EUR
Mindestbestellmenge: 33
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DPG20C200PN media?resourcetype=datasheets&itemid=DEA3C694-23C5-493C-A991-2548CAD0213C&filename=Littelfuse-Power-Semiconductors-DPG20C200PN-Datasheet
DPG20C200PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
36+2.02 EUR
38+1.90 EUR
Mindestbestellmenge: 20
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DPG20C400PN media?resourcetype=datasheets&itemid=E87CB565-0DFF-4A58-A4AE-7E164796DE68&filename=Littelfuse-Power-Semiconductors-DPG20C400PN-Datasheet
DPG20C400PN
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
24+3.07 EUR
30+2.43 EUR
32+2.30 EUR
Mindestbestellmenge: 22
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DPG20C200PB media?resourcetype=datasheets&itemid=F8BB398C-2D66-4BCB-B5A5-53172AE4D823&filename=Littelfuse-Power-Semiconductors-DPG20C200PB-Datasheet
DPG20C200PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AB
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.20 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DPG20C300PB DPG20C300PB.pdf
DPG20C300PB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
29+2.53 EUR
36+2.00 EUR
38+1.89 EUR
Mindestbestellmenge: 26
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DPG20C400PC-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3F8C2994420C4&compId=DPG20C400PC.pdf?ci_sign=ae12975f35f22d2ea8356a4e6286bba1a04794bc
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
40+1.82 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 34
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DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
77+0.93 EUR
78+0.92 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
43+1.66 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP-2
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
56+1.27 EUR
Mindestbestellmenge: 35
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DPG10I400PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840
DPG10I400PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
36+2.02 EUR
42+1.73 EUR
45+1.60 EUR
48+1.52 EUR
Mindestbestellmenge: 31
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DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
11+6.66 EUR
14+5.32 EUR
15+5.02 EUR
Mindestbestellmenge: 10
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IXFR200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c
IXFR200N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
46+1.57 EUR
68+1.06 EUR
72+1.00 EUR
500+0.97 EUR
Mindestbestellmenge: 35
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IXDN602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Case: SO8
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Mounting: SMD
Turn-on time: 93ns
Turn-off time: 93ns
Type of integrated circuit: driver
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
43+1.69 EUR
71+1.02 EUR
74+0.97 EUR
300+0.93 EUR
Mindestbestellmenge: 37
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DSA1-16D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-16D
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.91 EUR
17+4.33 EUR
18+4.09 EUR
Mindestbestellmenge: 11
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MCC26-12io1B pVersion=0046&contRep=ZT&docId=E29206B5694F53F19A99005056AB752F&compId=L073.pdf?ci_sign=00049e309488e06fa0b04fd0c328b67947769dea pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.07 EUR
36+26.91 EUR
Mindestbestellmenge: 3
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MCC26-12io8B pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.71 EUR
Mindestbestellmenge: 3
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MCC26-14io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCC26-14io1B
+1
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.00 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-16io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-08io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC26-08io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MCC26-14io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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DSSK48-003BS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB9B9FB2F898BF&compId=DSSK48-003BS.pdf?ci_sign=39cde3eceec47b3ed55488881079c2561cf5f1e3
DSSK48-003BS
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.30 EUR
57+1.26 EUR
61+1.19 EUR
64+1.13 EUR
250+1.10 EUR
500+1.07 EUR
Mindestbestellmenge: 55
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IX9907N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
Mindestbestellmenge: 129
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IX9908N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd
IX9908N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
97+0.74 EUR
109+0.66 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 87
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IXGH32N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472
IXGH32N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFH54N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
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CPC1965Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: SIP4
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.05 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 8
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CPC1965G pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP4
Body dimensions: 19.2x7.62x3.3mm
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Operating temperature: -40...85°C
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.39 EUR
18+4.05 EUR
19+3.82 EUR
Mindestbestellmenge: 12
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FMM75-01F FMM75-01F.pdf
FMM75-01F
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.72 EUR
Mindestbestellmenge: 4
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MDNA660U2200PTEH pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VGB0124AY7A pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA996B22C9C8960C7&compId=VGB%2C%20F.pdf?ci_sign=950fe8d4ce9285f8e3019d516bbc23c267185ed8
VGB0124AY7A
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+123.04 EUR
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IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
30+2.43 EUR
31+2.33 EUR
50+2.26 EUR
Mindestbestellmenge: 29
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IXFA26N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBAA25B128D8BF&compId=IXF_26N30X3.pdf?ci_sign=7542ebe8db09680e18acec1f007a854c704096f0 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFA26N30X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Produkt ist nicht verfügbar
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MEK300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MEK300-06DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+87.00 EUR
6+86.41 EUR
12+83.90 EUR
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MCB40P1200LB-TRR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492E173084520D6&compId=MCB40P1200LB.pdf?ci_sign=d1b644c5158fdbba254d94bc9d04330c91b74571
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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