Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFX64N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX74N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 74A Power dissipation: 1.4kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMA30E1800HA | IXYS |
![]() Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W Max. off-state voltage: 1.8kV Max. forward voltage: 1.25V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 370A Power dissipation: 210W Kind of package: tube Type of diode: rectifying Mounting: THT Case: TO247-2 |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA80N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTP180N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA8N50P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MCMA700P1600CA | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw Max. off-state voltage: 1.6kV Semiconductor structure: double series Case: ComPack Kind of package: bulk Type of semiconductor module: thyristor Load current: 700A Gate current: 300/400mA Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.41V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1966B | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase Mounting: SMT Case: SO8 Turn-on time: 20µs Body dimensions: 21.08x16.76x3.3mm Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 3A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CPC1966BX8 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase Mounting: SMT Case: SO8 Body dimensions: 21.08x16.76x3.3mm Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 3A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFP72N30X3M | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 72A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DSA15IM200UC | IXYS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 200A Kind of package: reel; tape Power dissipation: 75W |
auf Bestellung 2192 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC3710CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT89 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 250V Drain current: 0.22A On-state resistance: 10Ω Power dissipation: 1.4W Kind of channel: depletion Gate-source voltage: ±15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH50N90B2D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Turn-on time: 48ns Turn-off time: 820ns Type of transistor: IGBT Power dissipation: 400W Kind of package: tube Gate charge: 135nC Technology: GenX3™; HiPerFAST™; PT |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH50N90B2 | IXYS |
![]() Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Turn-on time: 48ns Turn-off time: 820ns Type of transistor: IGBT Power dissipation: 400W Kind of package: tube Gate charge: 135nC Technology: HiPerFAST™; XPT™ |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGK50N120C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Mounting: THT Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGX50N120C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Mounting: THT Case: PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH50N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 250A Turn-on time: 55ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH2N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13.5A Turn-on time: 115ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 32W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 10.5nC Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGH25N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 200A Turn-on time: 301ns Turn-off time: 409ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 75nC Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGK75N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264 Mounting: THT Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 530A Turn-on time: 280ns Turn-off time: 725ns Type of transistor: IGBT Power dissipation: 780W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 410nC Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
MWI75-06A7T | IXYS |
Category: IGBT modules Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DPG20C400PB | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT Case: TO220AB Max. off-state voltage: 0.4kV Max. forward voltage: 1.32V Load current: 10A x2 Semiconductor structure: common cathode; double |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C300PN | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO220FP Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double |
auf Bestellung 567 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C200PN | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 140A Case: TO220FP Max. forward voltage: 1.27V Reverse recovery time: 35ns Power dissipation: 35W Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C400PN | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO220FP Max. off-state voltage: 0.4kV Max. forward voltage: 1.03V Load current: 10A x2 Semiconductor structure: common cathode; double |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C200PB | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 140A Case: TO220AB Max. forward voltage: 1.27V Reverse recovery time: 35ns Power dissipation: 65W Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C300PB | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Mounting: THT Case: TO220AB Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C400PC-TRL | IXYS |
![]() Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: SMD Case: TO263AB Max. off-state voltage: 0.4kV Max. forward voltage: 1.51V Load current: 10A x2 Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DPG10I200PA | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 140A Case: TO220AC Max. forward voltage: 1.27V Reverse recovery time: 35ns Power dissipation: 65W Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I300PA | IXYS |
![]() Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W Mounting: THT Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Case: TO220AC |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I400PM | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W Mounting: THT Max. off-state voltage: 0.4kV Max. forward voltage: 1.32V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220FP-2 |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I200PM | IXYS |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 140A Case: TO220FP-2 Max. forward voltage: 1.27V Reverse recovery time: 35ns Power dissipation: 35W Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10I400PA | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W Mounting: THT Max. off-state voltage: 0.4kV Max. forward voltage: 1.03V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220AC |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG10P400PJ | IXYS |
![]() Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™ Mounting: THT Max. off-state voltage: 0.4kV Max. forward voltage: 1.28V Load current: 10A Semiconductor structure: double series Reverse recovery time: 45ns Max. forward impulse current: 130A Power dissipation: 60W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: ISOPLUS220™ |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR200N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Kind of package: tube Drain-source voltage: 100V Drain current: 120A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 235nC Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXDN602PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN602SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Number of channels: 2 Output current: -2...2A Supply voltage: 4.5...35V Case: SO8 Kind of output: non-inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Mounting: SMD Turn-on time: 93ns Turn-off time: 93ns Type of integrated circuit: driver |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA1-16D | IXYS |
![]() Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 2.3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Max. forward impulse current: 110A Case: FP-Case Max. forward voltage: 1.34V |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-12io1B | IXYS |
![]() ![]() ![]() Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 560A Max. off-state voltage: 1.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.64V Type of semiconductor module: thyristor |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-12io8B | IXYS |
![]() ![]() ![]() Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 0.44kA Max. off-state voltage: 1.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.27V Type of semiconductor module: thyristor |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-14io1B | IXYS |
![]() ![]() Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 1.4kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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MCC26-16io8B | IXYS |
![]() ![]() Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 1.6kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC26-08io1B | IXYS |
![]() ![]() Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 0.8kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC26-08io8B | IXYS |
![]() ![]() Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 0.8kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCC26-14io8B | IXYS |
![]() ![]() Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA Case: TO240AA Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. off-state voltage: 1.4kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.65V Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DSSK48-003BS | IXYS |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W Max. off-state voltage: 30V Max. forward voltage: 0.35V Load current: 25A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.3kA Power dissipation: 105W Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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IX9907N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V DC Kind of package: tube |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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IX9908N | IXYS |
![]() Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V DC Kind of package: tube |
auf Bestellung 287 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH32N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXFH54N65X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X3-Class Reverse recovery time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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CPC1965Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Max. operating current: 1A Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 260V AC Control current max.: 100mA Mounting: THT Case: SIP4 |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1965G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Mounting: THT Insulation voltage: 3.75kV Case: DIP4 Body dimensions: 19.2x7.62x3.3mm Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 260V AC Control current max.: 100mA Operating temperature: -40...85°C |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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FMM75-01F | IXYS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns Type of transistor: N-MOSFET x2 Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series Reverse recovery time: 300ns |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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MDNA660U2200PTEH | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA Type of bridge rectifier: three-phase Max. off-state voltage: 2.2kV Load current: 660A Max. forward impulse current: 5kA Electrical mounting: Press-Fit Version: module Max. forward voltage: 1.28V Case: E3-Pack Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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VGB0124AY7A | IXYS |
![]() Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV Type of bridge rectifier: braking rectifier assemblies Max. off-state voltage: 1.4kV Load current: 1A Max. forward impulse current: 60A Electrical mounting: screw Mechanical mounting: screw Version: module Case: VG-A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Drain-source voltage: 500V Drain current: 26A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Gate charge: 42nC Kind of channel: enhancement Mounting: SMD Case: TO263 |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MEK300-06DA | IXYS |
![]() Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: common cathode Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Case: Y4-M6 |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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MCB40P1200LB-TRR | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MCB40P1200LB-TUB | IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXFX64N50Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX74N50P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMA30E1800HA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 370A
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.43 EUR |
21+ | 3.47 EUR |
22+ | 3.29 EUR |
30+ | 3.20 EUR |
IXTA80N10T |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP180N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTA8N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCMA700P1600CA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: ComPack
Kind of package: bulk
Type of semiconductor module: thyristor
Load current: 700A
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.41V
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: ComPack
Kind of package: bulk
Type of semiconductor module: thyristor
Load current: 700A
Gate current: 300/400mA
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.41V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1966B |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Turn-on time: 20µs
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Turn-on time: 20µs
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1966BX8 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFP72N30X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DSA15IM200UC |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 2192 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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36+ | 2.03 EUR |
47+ | 1.54 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
500+ | 1.14 EUR |
CPC3710CTR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.22A
On-state resistance: 10Ω
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 0.22A
On-state resistance: 10Ω
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGH50N90B2D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: GenX3™; HiPerFAST™; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: GenX3™; HiPerFAST™; PT
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.48 EUR |
8+ | 9.14 EUR |
IXGH50N90B2 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.87 EUR |
10+ | 7.36 EUR |
IXGK50N120C3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGX50N120C3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGH50N120C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXGH2N250 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13.5A
Turn-on time: 115ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 32W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 10.5nC
Technology: NPT
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IXGH25N250 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 200A
Turn-on time: 301ns
Turn-off time: 409ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 75nC
Technology: NPT
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IXGK75N250 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Produkt ist nicht verfügbar
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MWI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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DPG20C400PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
29+ | 2.49 EUR |
31+ | 2.36 EUR |
DPG20C300PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.23 EUR |
36+ | 2.02 EUR |
41+ | 1.77 EUR |
45+ | 1.60 EUR |
48+ | 1.52 EUR |
250+ | 1.49 EUR |
DPG20C200PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
36+ | 2.02 EUR |
38+ | 1.90 EUR |
DPG20C400PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.35 EUR |
24+ | 3.07 EUR |
30+ | 2.43 EUR |
32+ | 2.30 EUR |
DPG20C200PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AB
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AB
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.20 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
DPG20C300PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
29+ | 2.53 EUR |
36+ | 2.00 EUR |
38+ | 1.89 EUR |
DPG20C400PC-TRL |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: SMD
Case: TO263AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DPG10I200PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220AC
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 65W
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
40+ | 1.82 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
DPG10I300PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.25 EUR |
77+ | 0.93 EUR |
78+ | 0.92 EUR |
DPG10I400PM |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.69 EUR |
43+ | 1.66 EUR |
DPG10I200PM |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP-2
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: TO220FP-2
Max. forward voltage: 1.27V
Reverse recovery time: 35ns
Power dissipation: 35W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
56+ | 1.27 EUR |
DPG10I400PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
36+ | 2.02 EUR |
42+ | 1.73 EUR |
45+ | 1.60 EUR |
48+ | 1.52 EUR |
DPG10P400PJ |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.42 EUR |
11+ | 6.66 EUR |
14+ | 5.32 EUR |
15+ | 5.02 EUR |
IXFR200N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 235nC
Kind of channel: enhancement
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXDN602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.04 EUR |
46+ | 1.57 EUR |
68+ | 1.06 EUR |
72+ | 1.00 EUR |
500+ | 0.97 EUR |
IXDN602SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Case: SO8
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Mounting: SMD
Turn-on time: 93ns
Turn-off time: 93ns
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Number of channels: 2
Output current: -2...2A
Supply voltage: 4.5...35V
Case: SO8
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Mounting: SMD
Turn-on time: 93ns
Turn-off time: 93ns
Type of integrated circuit: driver
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
43+ | 1.69 EUR |
71+ | 1.02 EUR |
74+ | 0.97 EUR |
300+ | 0.93 EUR |
DSA1-16D |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.91 EUR |
17+ | 4.33 EUR |
18+ | 4.09 EUR |
MCC26-12io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V; Ifsm: 560A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Type of semiconductor module: thyristor
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 27.07 EUR |
36+ | 26.91 EUR |
MCC26-12io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A; screw
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 25.71 EUR |
MCC26-14io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.00 EUR |
MCC26-16io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
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MCC26-08io1B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC26-08io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 800V; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 0.8kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCC26-14io8B |
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Hersteller: IXYS
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V; Igt: 100/200mA
Case: TO240AA
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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Stück im Wert von UAH
DSSK48-003BS |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Max. off-state voltage: 30V
Max. forward voltage: 0.35V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.3kA
Power dissipation: 105W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.30 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
64+ | 1.13 EUR |
250+ | 1.10 EUR |
500+ | 1.07 EUR |
IX9907N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
IX9908N |
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Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
97+ | 0.74 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
IXGH32N170A |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFH54N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPC1965Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: SIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Max. operating current: 1A
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Mounting: THT
Case: SIP4
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.05 EUR |
18+ | 4.19 EUR |
19+ | 3.96 EUR |
CPC1965G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP4
Body dimensions: 19.2x7.62x3.3mm
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP4
Body dimensions: 19.2x7.62x3.3mm
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 260V AC
Control current max.: 100mA
Operating temperature: -40...85°C
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.39 EUR |
18+ | 4.05 EUR |
19+ | 3.82 EUR |
FMM75-01F |
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Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 75A; double series; 300ns
Type of transistor: N-MOSFET x2
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Reverse recovery time: 300ns
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 20.72 EUR |
MDNA660U2200PTEH |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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VGB0124AY7A |
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Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 123.04 EUR |
IXFA26N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.55 EUR |
30+ | 2.43 EUR |
31+ | 2.33 EUR |
50+ | 2.26 EUR |
IXFA26N30X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MEK300-06DA |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: Y4-M6
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 87.00 EUR |
6+ | 86.41 EUR |
12+ | 83.90 EUR |
MCB40P1200LB-TRR |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCB40P1200LB-TUB |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH